Integration of single photon emitters in 2D layered materials with a silicon nitride photonic chip

Optical quantum technologies with hexagonal boron nitride single photon sources

Single photon quantum emitters are important building blocks of optical quantum technologies. Hexagonal boron nitride (hBN), an atomically thin wide band gap two dimensional material, hosts robust, optically active luminescent point defects, which are known to reduce phonon lifetimes, promises as a stable single-photon source at room temperature. In this Review, we present the recent advances in hBN quantum light emission, comparisons with other 2D material based quantum sources and analyze the performance of hBN quantum emitters. We also discuss state-of-the-art stable single photon emitter's fabrication in UV, visible and near IR regions, their activation, characterization techniques, photostability towards a wide range of operating temperatures and harsh environments, Density-functional theory predictions of possible hBN defect structures for single photon emission in UV to IR regions and applications of single photon sources in quantum communication and quantum photonic circuits with associated potential obstacles.

2D Rare Earth Material (EuOCl) with Ultra-Narrow Photoluminescence at Room Temperature

High color purity and color rendition of 2D luminescent materials have long been pursued for applications in low-dimensional lighting, display, biolabeling, and laser. However, the reported photoluminescence (PL) linewidth of most 2D luminescent materials is about dozens of meV. Herein, a brand-new luminescent system of 2D rare earth (RE) material EuOCl (1.1 nm) with ultra-narrow linewidth (1.2 meV) at room temperature is successfully synthesized via chemical vapor deposition (CVD). The linewidth of EuOCl flakes at room temperature is even narrower than most 2D luminescent materials and heterostructures detected at below 10 K. Impressively, the as-synthesized EuOCl flakes show abnormal temperature-dependent photoluminescent properties, which is absolutely different from the relatively stable 4f-4f transitions in RE owing to shielding from outer shell electrons. J-mixing effect has been successfully applied for this phenomenon. Undoubtedly, luminescent 2D EuOCl flakes will open new territory for the applications of 2D RE materials in the 2D luminescent areas, especially for the applications at room temperature.

Resonance Fluorescence from Waveguide-Coupled, Strain-Localized, Two-Dimensional Quantum Emitters

Efficient on-chip integration of single-photon emitters imposes a major bottleneck for applications of photonic integrated circuits in quantum technologies. Resonantly excited solid-state emitters are emerging as near-optimal quantum light sources, if not for the lack of scalability of current devices. Current integration approaches rely on cost-inefficient individual emitter placement in photonic integrated circuits, rendering applications impossible. A promising scalable platform is based on two-dimensional (2D) semiconductors. However, resonant excitation and single-photon emission of waveguide-coupled 2D emitters have proven to be elusive. Here, we show a scalable approach using a silicon nitride photonic waveguide to simultaneously strain-localize single-photon emitters from a tungsten diselenide (WSe₂) monolayer and to couple them into a waveguide mode. We demonstrate the guiding of single photons in the photonic circuit by measuring second-order autocorrelation of g⁽²⁾(0) = 0.150 ± 0.093 and perform on-chip resonant excitation, yielding a g⁽²⁾(0) = 0.377 ± 0.081. Our results are an important step to enable coherent control of quantum states and multiplexing of high-quality single photons in a scalable photonic quantum circuit.

Polarization Control of Deterministic Single-Photon Emitters in Monolayer WSe2

Single-photon emitters, the basic building blocks of quantum communication and information, have been developed using atomically thin transition metal dichalcogenides (TMDCs). Although the bandgap of TMDCs was spatially engineered in artificially created defects for single-photon emitters, it remains a challenge to precisely align the emitter's dipole moment to optical cavities for the Purcell enhancement. Here, we demonstrate position- and polarization-controlled single-photon emitters in monolayer WSe₂. A tensile strain of ∼0.2% was applied to monolayer WSe₂ by placing it onto a dielectric rod structure with a nanosized gap. Excitons were localized in the nanogap sites, resulting in the generation of linearly polarized single-photon emission with a g⁽²⁾ of ∼0.1 at 4 K. Additionally, we measured the abrupt change in polarization of single photons with respect to the nanogap size. Our robust spatial and polarization control of emission provides an efficient way to demonstrate deterministic and scalable single-photon sources by integrating with nanocavities.

Long-Distance Ultrafast Spin Transfer over a Zigzag Carbon Chain Structure

Using high-level ab initio quantum theory we suggest an optically induced subpicosecond spin-transfer scenario over 4.428 nm, a distance which is directly comparable to the actual CMOS scale. The spin-density transfer takes place between two Ni atoms and over a 40-atom-long zigzag carbon chain. The suitable combination of the local symmetries of the participating carbon atoms and the global symmetry of the whole molecule gives rise to what we term the dynamical Goodenough-Kanamori rules, allowing the long-range coupling of the two Ni atoms. We also present local spin-flip scenarios, and compare spin flip and spin transfer with respect to their sensitivity against an external static magnetic gradient. Finally, we use two identical laser pulses, rather than a single one, which allows us to accurately control local (intrasite) vs global (intersite) processes, and we thus solve the problem of embedding individually addressable molecular nanologic elements in an integrated nanospintronic circuit. Our results underline the great potential of carbon chain systems as building and supporting blocks for designing future all-optical magnetic processing units.

Emerging Light-Emitting Materials for Photonic Integration

The arrival of the information explosion era is urging the development of large-bandwidth high-data-rate optical interconnection technology. Up to now, the biggest stumbling block in optical interconnections has been the lack of efficient light sources despite significant progress that has been made in germanium-on-silicon (Ge-on-Si) and III-V-on-silicon (III-V-on-Si) lasers. 2D materials and metal halide perovskites have attracted much attention in recent years, and exhibit distinctive advantages in the application of on-chip light emitters. Herein, this Progress Report reviews the recent progress made in light-emitting materials with a focus on new materials, i.e., 2D materials and metal halide perovskites. The report briefly introduces the current status of Ge-on-Si and III-V-on-Si lasers and discusses the advances of 2D and perovskite light-emitting materials for photonic integration, including their optical properties, preparation methods, as well as the light sources based on these materials. Finally, challenges and perspectives of these emerging materials on the way to the efficient light sources are discussed.

Strain Modulation of Si Vacancy Emission from SiC Micro- and Nanoparticles

Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particles to investigate relevant defect localizations, emission shifting, and waveguiding. Specifically, emission from 6H-SiC micro- and nanoparticles ranging from 100 nm to 5 μm in size is collected using cathodoluminescence (CL), and we monitor signals attributed to the Si vacancy (VSi) as a function of its location. Clear shifts in the emission wavelength are found for emitters localized in the particle center and at the edges. By comparing spatial CL maps with strain analysis carried out in transmission electron microscopy, we attribute the emission shifts to compressive strain of 2-3% along the particle a-direction. Thus, embedding VSi qubit defects within SiC nanoparticles offers an interesting and versatile opportunity to tune single-photon emission energies while simultaneously ensuring ease of addressability via a self-assembled SiC nanoparticle matrix.

Integration of Single-Photon Emitters in 2D Materials with Plasmonic Waveguides at Room Temperature

Efficient integration of a single-photon emitter with an optical waveguide is essential for quantum integrated circuits. In this study, we integrated a single-photon emitter in a hexagonal boron nitride (h-BN) flake with a Ag plasmonic waveguide and measured its optical properties at room temperature. First, we performed numerical simulations to calculate the efficiency of light coupling from the emitter to the Ag plasmonic waveguide, depending on the position and polarization of the emitter. In the experiment, we placed a Ag nanowire, which acted as the plasmonic waveguide, near the defect of the h-BN, which acted as the single-photon emitter. The position and direction of the nanowire were precisely controlled using a stamping method. Our time-resolved photoluminescence measurement showed that the single-photon emission from the h-BN flake was enhanced to almost twice the intensity as a result of the coupling with the Ag nanowire. We expect these results to pave the way for the practical implementation of on-chip nanoscale quantum plasmonic integrated circuits.

Perovskite-Gallium Phosphide Platform for Reconfigurable Visible-Light Nanophotonic Chip

Reduction of the wavelength in on-chip light circuitry is critically important not only for the sake of keeping up with Moore's law for photonics but also for reaching toward the spectral ranges of operation of emerging materials, such as atomically thin semiconductors, vacancy-based single-photon emitters, and quantum dots. This requires efficient and tunable light sources as well as compatible waveguide networks. For the first challenge, halide perovskites are prospective materials that enable cost-efficient fabrication of micro- and nanolasers. On the other hand, III-V semiconductor nanowires are optimal for guiding of visible light as they exhibit a high refractive index as well as excellent shape and crystalline quality beneficial for strong light confinement and long-range waveguiding. Here, we develop an integrated platform for visible light that comprises gallium phosphide (GaP) nanowires directly embedded into compact CsPbBr₃-based light sources. In our devices, perovskite microcrystals support stable room-temperature lasing and broadband chemical tuning of the emission wavelength in the range of 530-680 nm, whereas GaP nanowaveguides support efficient outcoupling of light, its subwavelength (<200 nm) confinement, and long-range guiding over distances more than 20 μm. As a highlight of our approach, we demonstrate sequential transfer and conversion of light using an intermediate perovskite nanoparticle in a chain of GaP nanowaveguides.

Coupling Hexagonal Boron Nitride Quantum Emitters to Photonic Crystal Cavities

Quantum photonics technologies require a scalable approach for the integration of nonclassical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal boron nitride (hBN) are among the front runners for single photon sources due to their ultra-bright emission; however, the coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si₃N₄) and achieve an experimentally measured quality factor (Q-factor) of 3300 for hBN/Si₃N₄ hybrid cavities. We observed 6-fold photoluminescence enhancement of an hBN single photon emission at room temperature. Our work will be useful for further development of cavity quantum electrodynamic experiments and on-chip integration of two-dimensional (2D) materials.

Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS2

Structuring materials with atomic precision is the ultimate goal of nanotechnology and is becoming increasingly relevant as an enabling technology for quantum electronics/spintronics and quantum photonics. Here, we create atomic defects in monolayer MoS₂ by helium ion (He-ion) beam lithography with a spatial fidelity approaching the single-atom limit in all three dimensions. Using low-temperature scanning tunneling microscopy (STM), we confirm the formation of individual point defects in MoS₂ upon He-ion bombardment and show that defects are generated within 9 nm of the incident helium ions. Atom-specific sputtering yields are determined by analyzing the type and occurrence of defects observed in high-resolution STM images and compared with Monte Carlo simulations. Both theory and experiment indicate that the He-ion bombardment predominantly generates sulfur vacancies.

Band Nesting in Two-Dimensional Crystals: An Exceptionally Sensitive Probe of Strain

Band nesting occurs when conduction and valence bands are approximately equispaced over regions in the Brillouin zone. In two-dimensional materials, band nesting results in singularities of the joint density of states and thus in a strongly enhanced optical response at resonant frequencies. We exploit the high sensitivity of such resonances to small changes in the band structure to sensitively probe strain in semiconducting transition metal dichalcogenides (TMDs). We measure and calculate the polarization-resolved optical second harmonic generation (SHG) at the band nesting energies and present the first measurements of the energy-dependent nonlinear photoelastic effect in atomically thin TMDs (MoS₂, MoSe₂, WS₂, and WSe₂) combined with a theoretical analysis of the underlying processes. Experiment and theory are found to be in good qualitative agreement displaying a strong energy dependence of the SHG, which can be exploited to achieve exceptionally strong modulation of the SHG under strain. We attribute this sensitivity to a redistribution of the joint density of states for the optical response in the band nesting region. We predict that this exceptional strain sensitivity is a general property of all 2D materials with band nesting.

Hybrid integrated quantum photonic circuits

Recent developments in chip-based photonic quantum circuits has radically impacted quantum information processing. However, it is challenging for monolithic photonic platforms to meet the stringent demands of most quantum applications. Hybrid platforms combining different photonic technologies in a single functional unit have great potential to overcome the limitations of monolithic photonic circuits. Our review summarizes the progress of hybrid quantum photonics integration, discusses important design considerations including optical connectivity and operation conditions, then highlights several successful realizations of key physical resources for building a quantum-teleporter. We conclude by discussing the roadmap for realizing future advanced large-scale hybrid devices, beyond the solid state platform, which hold great potential for quantum information applications.