102
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Jun JH, Park B, Cho K, Kim S. Flexible TFTs based on solution-processed ZnO nanoparticles. NANOTECHNOLOGY 2009; 20:505201. [PMID: 19907070 DOI: 10.1088/0957-4484/20/50/505201] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes have been spotlighted in the field of flexible electronics, since they provide the opportunity to fabricate flexible electronics using low-temperature processes at low-cost with high throughput. However, there are few reports which describe the characteristics of electronic devices on flexible substrates. In this study, we fabricated flexible thin-film transistors (TFTs) on plastic substrates with channel layers formed by the spin-coating of ZnO nanoparticles and investigated their electrical properties in the flat and bent states. To the best of our knowledge, this study is the first attempt to fabricate fully functional ZnO TFTs on flexible substrates through the solution process. The ZnO TFTs showed n-channel device characteristics and operated in enhancement mode. In the flat state, a representative ZnO TFT presented a very low field-effect mobility of 1.2 x 10(-5) cm(2) V(-1) s(-1), while its on/off ratio was as high as 1.5 x 10(3). When the TFT was in the bent state, some of the device parameters changed. The changes of the device parameters and the possible reasons for these changes will be described. The recovery characteristics of the TFTs after being subjected to cyclic bending will be discussed as well.
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Affiliation(s)
- Jin Hyung Jun
- Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Republic of Korea
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107
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Xia G, Jeong SJ, Kim JE, Kim BH, Koo CM, Kim SO. Spin coating nanopatterned multielemental materials via self-assembled nanotemplates. NANOTECHNOLOGY 2009; 20:225301. [PMID: 19433872 DOI: 10.1088/0957-4484/20/22/225301] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Spin coating of multicomponent precursor solutions was employed in conjunction with block copolymer nanotemplates to fabricate nanopatterned functional multielemental materials. Nanodot and nanowire arrays of several multielemental materials exhibiting optoelectronic and multiferroic properties have been fabricated on various substrates to demonstrate the versatility of our approach. The shape, size and density of nanopatterned multielemental materials can be tuned in a variety of ways. This low cost and large scale solution nanopatterning process without a harsh etching step may offer a new opportunity for development of ultrahigh density device nanostructures.
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Affiliation(s)
- Guodong Xia
- Department of Materials Science and Engineering, KI for the Nanocentury, KAIST, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Korea
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108
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Zhang Y, Zhang Z, Zhao Y, Fan Y, Tong T, Zhang H, Wang Y. Solution-processed microwires of phthalocyanine copper(II) derivative with excellent conductivity. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2009; 25:6045-6048. [PMID: 19415916 DOI: 10.1021/la901254j] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Well-defined 1D microwires of CuPcOC4 with diameters of about 1.0 microm and lengths ranging from 260 to 300 microm as well as ultralong microwires (>5 mm) with diameters of about 10 microm and high length/diameter aspect ratios were synthesized via a simple solution process. Electrical conductive devices based on these microwires fabricated in situ on glass substrates with two ITO electrodes exhibited excellent conductivity properties.
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Affiliation(s)
- Yu Zhang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun 130012, PR China
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114
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Dasgupta S, Gottschalk S, Kruk R, Hahn H. A nanoparticulate indium tin oxide field-effect transistor with solid electrolyte gating. NANOTECHNOLOGY 2008; 19:435203. [PMID: 21832686 DOI: 10.1088/0957-4484/19/43/435203] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Reversible tuning of the transport properties of metallic conducting systems is not reported widely in the literature. Here, we report a junction field-effect transistor (FET) based on a transparent conducting oxide (TCO) nanoparticle channel and a solid polymer electrolyte as a gate. The device principle is based on the variation of the drain current induced by the capacitive double layer charging at the electrolyte/nanoparticle interfaces. A device with a metallic conducting channel made of indium tin oxide (ITO) nanoparticles exhibits an on/off ratio of 2 × 10(3) even when the gate potential is limited within the electrochemical capacitive region to avoid redox reactions at the interface. An FET device with metal-like conductance is always favored for the low dimensions of the device and a high on-state current. The field-effect mobility is calculated to be 24.3 cm(2) V(-1) s(-1). A subthreshold swing between 230 and 425 mV dec(-1) is observed.
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Affiliation(s)
- S Dasgupta
- Institute of Nanotechnology, Forschungszentrum Karlsruhe GmbH, PO Box 3640, D-76021 Karlsruhe, Germany
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119
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Zhu R, Lin JM, Wang WZ, Zheng C, Wei, Wei W, Xu YH, Peng JB, Cao Y. Use of the β-Phase of Poly(9,9-dioctylfluorene) as a Probe into the Interfacial Interplay for the Mixed Bilayer Films Formed by Sequential Spin-Coating. J Phys Chem B 2008; 112:1611-8. [DOI: 10.1021/jp076234n] [Citation(s) in RCA: 31] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Rui Zhu
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Jian-Ming Lin
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Wei-Zhi Wang
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Chao Zheng
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Wei
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Wei Wei
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Yun-Hua Xu
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Jun-Biao Peng
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
| | - Yong Cao
- Institute of Advanced Materials (IAM), Fudan University, 220 Handan Road, Shanghai 200433, China, Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 66 XinMoFan Road, Nanjing 210003, China, and Institute of Polymer Optoelectronic Materials and Devices, Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
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121
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Park JU, Hardy M, Kang SJ, Barton K, Adair K, Mukhopadhyay DK, Lee CY, Strano MS, Alleyne AG, Georgiadis JG, Ferreira PM, Rogers JA. High-resolution electrohydrodynamic jet printing. NATURE MATERIALS 2007; 6:782-9. [PMID: 17676047 DOI: 10.1038/nmat1974] [Citation(s) in RCA: 495] [Impact Index Per Article: 29.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2007] [Accepted: 06/21/2007] [Indexed: 05/16/2023]
Abstract
Efforts to adapt and extend graphic arts printing techniques for demanding device applications in electronics, biotechnology and microelectromechanical systems have grown rapidly in recent years. Here, we describe the use of electrohydrodynamically induced fluid flows through fine microcapillary nozzles for jet printing of patterns and functional devices with submicrometre resolution. Key aspects of the physics of this approach, which has some features in common with related but comparatively low-resolution techniques for graphic arts, are revealed through direct high-speed imaging of the droplet formation processes. Printing of complex patterns of inks, ranging from insulating and conducting polymers, to solution suspensions of silicon nanoparticles and rods, to single-walled carbon nanotubes, using integrated computer-controlled printer systems illustrates some of the capabilities. High-resolution printed metal interconnects, electrodes and probing pads for representative circuit patterns and functional transistors with critical dimensions as small as 1 mum demonstrate potential applications in printed electronics.
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Affiliation(s)
- Jang-Ung Park
- Department of Materials Science and Engineering, Beckman Institute, and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801, USA
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