Triboelectric active sensor array for self-powered static and dynamic pressure detection and tactile imaging

We report an innovative, large-area, and self-powered pressure mapping approach based on the triboelectric effect, which converts the mechanical stimuli into electrical output signals. The working mechanism of the triboelectric active sensor (TEAS) was theoretically studied by both analytical method and numerical calculation to gain an intuitive understanding of the relationship between the applied pressure and the responsive signals. Relying on the unique pressure response characteristics of the open-circuit voltage and short-circuit current, we realize both static and dynamic pressure sensing on a single device for the first time. A series of comprehensive investigations were carried out to characterize the performance of the TEAS, and high sensitivity (0.31 kPa(-1)), ultrafast response time (<5 ms), long-term stability (30,000 cycles), as well as low detection limit (2.1 Pa) were achieved. The pressure measurement range of the TEAS was adjustable, which means both gentle pressure detection and large-scale pressure sensing were enabled. Through integrating multiple TEAS units into a sensor array, the as-fabricated TEAS matrix was capable of monitoring and mapping the local pressure distribution applied on the device with distinguishable spatial profiles. This work presents a technique for tactile imaging and progress toward practical applications of nanogenerators, providing potential solutions for accomplishment of artificial skin, human-electronic interfacing, and self-powered systems.

Tactile feedback display with spatial and temporal resolutions

We report the electronic recording of the touch contact and pressure using an active matrix pressure sensor array made of transparent zinc oxide thin-film transistors and tactile feedback display using an array of diaphragm actuators made of an interpenetrating polymer elastomer network. Digital replay, editing and manipulation of the recorded touch events were demonstrated with both spatial and temporal resolutions. Analog reproduction of the force is also shown possible using the polymer actuators, despite of the high driving voltage. The ability to record, store, edit, and replay touch information adds an additional dimension to digital technologies and extends the capabilities of modern information exchange with the potential to revolutionize physical learning, social networking, e-commerce, robotics, gaming, medical and military applications.

GaN nanobelt-based strain-gated piezotronic logic devices and computation

Using the piezoelectric polarization charges created at the metal-GaN nanobelt (NB) interface under strain to modulate transport of local charge carriers across the Schottky barrier, the piezotronic effect is utilized to convert mechanical stimuli applied on the wurtzite-structured GaN NB into electronic controlling signals, based on which the GaN NB strain-gated transistors (SGTs) have been fabricated. By further assembling and integrating GaN NB SGTs, universal logic devices such as NOT, AND, OR, NAND, NOR, and XOR gates have been demonstrated for performing mechanical-electrical coupled piezotronic logic operations. Moreover, basic piezotronic computation such as one-bit binary addition over the input mechanical strains with corresponding computation results in an electrical domain by half-adder has been implemented. The strain-gated piezotronic logic devices may find applications in human-machine interfacing, active flexible/stretchable electronics, MEMS, biomedical diagnosis/therapy, and prosthetics.

Piezotronic effect in solution-grown p-type ZnO nanowires and films

Investigating the piezotronic effect in p-type piezoelectric semiconductor is critical for developing a complete piezotronic theory and designing/fabricating novel piezotronic applications with more complex functionality. Using a low temperature solution method, we were able to produce ultralong (up to 60 μm in length) Sb doped p-type ZnO nanowires on both rigid and flexible substrates. For the p-type nanowire field effect transistor, the on/off ratio, threshold voltage, mobility, and carrier concentration of 0.2% Sb-doped sample are found to be 10(5), 2.1 V, 0.82 cm(2)·V(-1)·s(-1), and 2.6 × 10(17) cm(-3), respectively, and the corresponding values for 1% Sb doped samples are 10(4), 2.0 V, 1.24 cm(2)·V(-1)·s(-1), and 3.8 × 10(17) cm(-3). We further investigated the universality of piezotronic effect in the as-synthesized Sb-doped p-type ZnO NWs and reported for the first time strain-gated piezotronic transistors as well as piezopotential-driven mechanical energy harvesting based on solution-grown p-type ZnO NWs. The results presented here broaden the scope of piezotronics and extend the framework for its potential applications in electronics, optoelectronics, smart MEMS/NEMS, and human-machine interfacing.