Reduced coercive field in BiFeO₃ thin films through domain engineering

Programming Polarity Heterogeneity of Energy Storage Dielectrics by Bidirectional Intelligent Design

Dielectric capacitors, characterized by ultra-high power densities, are considered as fundamental energy storage components in electronic and electrical systems. However, synergistically improving energy densities and efficiencies remains a daunting challenge. Understanding the role of polarity heterogeneity at the nanoscale in determining polarization response is crucial to the domain engineering of high-performance dielectrics. Here, a bidirectional design with phase-field simulation and machine learning is performed to forward reveal the structure-property relationship and reversely optimize polarity heterogeneity to improve energy storage performance. Taking BiFeO3-based dielectrics as typical systems, this work establishes the mapping diagrams of energy density and efficiency dependence on the volume fraction, size and configuration of polar regions. Assisted by CatBoost and Wolf Pack algorithms, this work analyzes the contributions of geometric factors and intrinsic features and find that nanopillar-like polar regions show great potential in achieving both high polarization intensity and fast dipole switching. Finally, a maximal energy density of 188 J cm-3 with efficiency above 95% at 8 MV cm-1 is obtained in BiFeO3-Al2O3 systems. This work provides a general method to study the influence of local polar heterogeneity on polarization behaviors and proposes effective strategies to enhance energy storage performance by tuning polarity heterogeneity.

Field-Induced Antiferroelectric-Ferroelectric Transformation in Organometallic Perovskite Displaying Giant Negative Electrocaloric Effect

Antiferroelectric materials with an electrocaloric effect (ECE) have been developed as promising candidates for solid-state refrigeration. Despite the great advances in positive ECE, reports on negative ECE remain quite scarce because of its elusive physical mechanism. Here, a giant negative ECE (maximum ΔS ∼ -33.3 J kg-1 K-1 with ΔT ∼ -11.7 K) is demonstrated near room temperature in organometallic perovskite, iBA2EA2Pb3I10 (1, where iBA = isobutylammonium and EA = ethylammonium), which is comparable to the greatest ECE effects reported so far. Moreover, the ECE efficiency ΔS/ΔE (∼1.85 J cm kg-1 K-1 kV-1) and ΔT/ΔE (∼0.65 K cm kV-1) are almost 2 orders of magnitude higher than those of classical inorganic ceramic ferroelectrics and organic polymers, such as BaTiO3, SrBi2Ta2O9, Hf1/2Zr1/2O2, and P(VDF-TrFE). As far as we know, this is the first report on negative ECE in organometallic hybrid perovskite ferroelectric. Our experimental measurement combined with the first-principles calculations reveals that electric field-induced antipolar to polar structural transformation results in a large change in dipolar ordering (from 6.5 to 45 μC/cm2 under the ΔE of 18 kV/cm) that is closely related to the entropy change, which plays a key role in generating such giant negative ECE. This discovery of field-induced negative ECE is unprecedented in organometallic perovskite, which sheds light on the exploration of next-generation refrigeration devices with high cooling efficiency.

Superior ferroelectricity and nonlinear optical response in a hybrid germanium iodide hexagonal perovskite

Abundant chemical diversity and structural tunability make organic-inorganic hybrid perovskites (OIHPs) a rich ore for ferroelectrics. However, compared with their inorganic counterparts such as BaTiO₃, their ferroelectric key properties, including large spontaneous polarization (P_s), low coercive field (E_c), and strong second harmonic generation (SHG) response, have long been great challenges, which hinder their commercial applications. Here, a quasi-one-dimensional OIHP DMAGeI₃ (DMA = Dimethylamine) is reported, with notable ferroelectric attributes at room temperature: a large P_s of 24.14 μC/cm² (on a par with BaTiO₃), a low E_c below 2.2 kV/cm, and the strongest SHG intensity in OIHP family (about 12 times of KH₂PO₄ (KDP)). Revealed by the first-principles calculations, its large P_s originates from the synergistic effects of the stereochemically active 4s² lone pair of Ge²⁺ and the ordering of organic cations, and its low kinetic energy barrier of small DMA cations results in a low E_c. Our work brings the comprehensive ferroelectric performances of OIHPs to a comparable level with commercial inorganic ferroelectric perovskites.

Atomic-Level Response of the Domain Walls in Bismuth Ferrite in a Subcoercive-Field Regime

The atomic-level response of zigzag ferroelectric domain walls (DWs) was investigated with in situ bias scanning transmission electron microscopy (STEM) in a subcoercive-field regime. Atomic-level movement of a single DW was observed. Unexpectedly, the change in the position of the DW, determined from the atomic displacement, did not follow the position of the strain field when the electric field was applied. This can be explained as low mobility defect segregation at the initial DW position, such as ordered clusters of oxygen vacancies. Further, the triangular apex of the zigzag wall is pinned, but it changes its shape and becomes asymmetric under electrical stimuli. This phenomenon is accompanied by strain and bound charge redistribution. We report on unique atomic-scale phenomena at the DW level and show that in situ STEM studies with atomic resolution are very relevant as they complement, and sometimes challenge, the knowledge gained from lower resolution studies.

Strain and orientation engineering in ABO3perovskite oxide thin films

Perovskite oxides with chemical formula ABO₃are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community's focus in the future.

Switching a Polar Metal via Strain Gradients

Although rare, spontaneous breakdown of inversion symmetry sometimes occurs in a material which is metallic: these are commonly known as polar metals or ferroelectric metals. Their polarization, however, is difficult to switch via an electric field, which limits the experimental control over band topology. Here we investigate, via first-principles theory, flexoelectricity as a possible way around this obstacle with the well-known polar metal LiOsO_{3}. The flexocoupling coefficients are computed for this metal with high accuracy with an approach based on real-space sums of the interatomic force constants. A Landau-Ginzburg-Devonshire-type first-principles Hamiltonian is built and a critical bending radius to switch the material is estimated, whose order of magnitude is comparable to that of BaTiO_{3}.

Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering

Developing high-performance film dielectrics for capacitive energy storage has been a great challenge for modern electrical devices. Despite good results obtained in lead titanate-based dielectrics, lead-free alternatives are strongly desirable due to environmental concerns. Here we demonstrate that giant energy densities of ~70 J cm⁻³, together with high efficiency as well as excellent cycling and thermal stability, can be achieved in lead-free bismuth ferrite-strontium titanate solid-solution films through domain engineering. It is revealed that the incorporation of strontium titanate transforms the ferroelectric micro-domains of bismuth ferrite into highly-dynamic polar nano-regions, resulting in a ferroelectric to relaxor-ferroelectric transition with concurrently improved energy density and efficiency. Additionally, the introduction of strontium titanate greatly improves the electrical insulation and breakdown strength of the films by suppressing the formation of oxygen vacancies. This work opens up a feasible and propagable route, i.e., domain engineering, to systematically develop new lead-free dielectrics for energy storage.

Dielectrics with high capacitive energy storage density are essential for modern electrical devices and pulsed power systems. Here, the authors realised superior energy storage performance in lead-free bismuth ferrite-based relaxor ferroelectric films through domain engineering.

Domain Evolution and Piezoelectric Response across Thermotropic Phase Boundary in (K,Na)NbO3-Based Epitaxial Thin Films

Recent research progress in (K,Na)NbO₃ (KNN)-based lead-free piezoelectric ceramics has attracted increasing attention for their applications to microsystems or microelectromechanical systems (MEMS) in the form of thin films. This work demonstrates that high-quality KNN-based epitaxial films can be synthesized by a conventional sol-gel method, whose phase structure and domain characteristics have been investigated with emphasis on the temperature effect. A monoclinic M_C structure is observed at room temperature in KNN-based epitaxial films, which is close to but different from the orthorhombic phase in bulk counterparts. Piezoresponse force microscopy (PFM) at elevated temperatures reveals continuous changes of ferroelectric domains in KNN films during heating and cooling cycles between room temperature and 190 °C. A distinct change in domain morphology is observed upon heating to 110 °C, accompanied by a clear variation of dielectric permittivity suggesting a thermotropic phase transition, which is revealed to belong to a M_C-M_A phase transition on the basis of structural and PFM analysis on local ferroelectric and piezoelectric behaviors. Enhanced piezoelectric response at the thermotropic phase boundary is observed, which is attributed to active domains and/or nanodomains formed across the boundary. Domain engineering by utilizing the phase transition should be important and effective in KNN-based films not only for property enhancement but also for its textured ceramics.

The Evidence of Giant Surface Flexoelectric Field in (111) Oriented BiFeO3 Thin Film

In this work, the surface structure of a single-domain epitaxial BiFeO₃ film with (111) orientation was investigated by in situ grazing incidence X-ray diffraction and X-ray reflectivity. We found that a large strain gradient exists in the surface region (2-3 nm) of the BiFeO₃ film. The strain gradient is approximately 10⁷ m^-1, which is 2 or 3 orders of magnitude larger than the value inside the film. Moreover, we found that a surface layer with a lower electron density compared with the underlying BiFeO₃ layer exists on the surface of BiFeO₃ film, and this layer exhibits an irreversible surface structure transition occurs at 500 K, which should be associated with the surface flexoelectric field. We considered that this large strain gradient is originated from the surface depolarization field of ferroelectrics. Our results suggest a coupling between the surface structure and the flexoelectricity and imply that the surface layer and properties would be controlled by the strain gradient in ferroelectric films.

Atomic Resolution Interfacial Structure of Lead-free Ferroelectric K0.5Na0.5NbO3 Thin films Deposited on SrTiO3

Oxide interface engineering has attracted considerable attention since the discovery of its exotic properties induced by lattice strain, dislocation and composition change at the interface. In this paper, the atomic resolution structure and composition of the interface between the lead-free piezoelectric (K_0.5Na_0.5)NbO₃ (KNN) thin films and single-crystalline SrTiO₃ substrate were investigated by means of scanning transmission electron microscopy (STEM) combining with electron energy loss spectroscopy (EELS). A sharp epitaxial interface was observed to be a monolayer composed of Nb and Ti cations with a ratio of 3/1. The First-Principles Calculations indicated the interface monolayer showed different electronic structure and played the vital role in the asymmetric charge distribution of KNN thin films near the interface. We also observed the gradual relaxation process for the relatively large lattice strains near the KNN/STO interface, which remarks a good structure modulation behavior of KNN thin films via strain engineering.

Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes

Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and ∼60 nm, respectively, representing an ultrahigh ferroelectric memory density of ∼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.

Low-temperature liquid precursors of crystalline metal oxides assisted by heterogeneous photocatalysis

The photocatalytically assisted decomposition of liquid precursors of metal oxides incorporating TiO2 particles enables the preparation of functional layers from the ferroelectric Pb(Zr,Ti)O3 and multiferroic BiFeO3 perovskite systems at temperatures not exceeding 350 ºC. This enables direct deposition on flexible plastic, where the multifunctionality provided by these complex-oxide materials guarantees their potential use in next-generation flexible electronics.

Doping BiFeO3: approaches and enhanced functionality

BiFeO(3) is one of the most studied multiferroic materials. Both its magnetic and ferroelectric properties can be influenced by doping. A large body of work on the doped material has been presented in the past couple of years. In this paper we provide a perspective on general doping concepts and their impact on the material's functionality.