Highly efficient single-layer polymer ambipolar light-emitting field-effect transistors

A Fluorescent Conjugated Polar Polymer for Probing Charge Injection in Multilayer Organic Light-Emitting Transistors

Ambipolar organic light-emitting transistors (OLETs) are extremely appealing devices for applications from sensing to communication and display realization due to their inherent capability of coupling switching and light-emitting features. However, their limited external quantum efficiency (EQE) and brightness under ambipolar bias conditions hamper the progress of OLET technology. In this context, it was recently demonstrated in multi-stacked devices that the engineering of the interface between the topmost electron-transporting organic semiconductor (e-OS) and the emission layer (EML) is crucial in optimizing the recombination of the minority charges (i.e., electrons) and to enhance EQE and brightness. Here, we introduce a new light-emitting conjugated polar polymer (CPP) in a multi-stacked OLET to improve the electron injection from e-OS to EML and to study, simultaneously, electroluminescence-related processes such as exciton formation and quenching processes. Interestingly, we observed that the highly polar groups present in the conjugate polymer induced polarization-related relevant charge-trapping phenomena with consequent modulation of the entire electrostatic field distribution and unexpected optoelectronic features. In view of the extensive use of CPPs in OLETs, the use of multifunctional CPPs for probing photophysical processes at the functional interfaces in stacked devices may speed up the improvement of the light-emission properties in OLETs.

Dual Optoelectronic Organic Field-Effect Device: Combination of Electroluminescence and Photosensitivity

Merging the functionality of an organic field-effect transistor (OFET) with either a light emission or a photoelectric effect can increase the efficiency of displays or photosensing devices. In this work, we show that an organic semiconductor enables a multifunctional OFET combining electroluminescence (EL) and a photoelectric effect. Specifically, our computational and experimental investigations of a six-ring thiophene-phenylene co-oligomer (TPCO) revealed that this material is promising for OFETs, light-emitting, and photoelectric devices because of the large oscillator strength of the lowest-energy singlet transition, efficient luminescence, pronounced delocalization of the excited state, and balanced charge transport. The fabricated OFETs showed a photoelectric response for wavelengths shorter than 530 nm and simultaneously EL in the transistor channel, with a maximum at ~570 nm. The devices demonstrated an EL external quantum efficiency (EQE) of ~1.4% and a photoelectric responsivity of ~0.7 A W-1, which are among the best values reported for state-of-the-art organic light-emitting transistors and phototransistors, respectively. We anticipate that our results will stimulate the design of efficient materials for multifunctional organic optoelectronic devices and expand the potential applications of organic (opto)electronics.

Impact of Photoluminescence Imaging Methodology on Transport Parameters in Semiconductors

Triplet-triplet annihilation-induced delayed emission provides a pathway for investigating triplets via emission spectroscopy. This bimolecular annihilation depends directly on the transport properties of triplet excitons in disordered organic semiconductors. Photoluminescence (PL) imaging is a direct method for studying exciton and charge-carrier diffusivity. However, most of these studies neglect dispersive transport. Early time scale measurements using this technique can lead to an overestimation of the diffusion coefficient (DT) or diffusion length (Ld). In this study, we investigated the time-dependent triplet DT using PL imaging. We observed an overestimation of Ld in classical delayed PL imaging, often 1 order of magnitude higher than the actual Ld value. We compared various thicknesses of polymeric thin films to study the dispersive nature of triplet excitons. Transient analysis of delayed PL imaging and steady state imaging reveals the importance of considering the time-dependent nature of DT for the triplet excitons in disordered electronic materials.

Dibenzothiophene Sulfone-Based Ambipolar-Transporting Blue-Emissive Organic Semiconductors Towards Simple-Structured Organic Light-Emitting Transistors

The development of blue-emissive ambipolar organic semiconductor is an arduous target due to the large energy gap, but is an indispensable part for electroluminescent device, especially for the transformative display technology of simple-structured organic light-emitting transistor (SS-OLET). Herein, we designed and synthesized two new dibenzothiophene sulfone-based high mobility blue-emissive organic semiconductors (DNaDBSOs), which demonstrate superior optical property with solid-state photoluminescent quantum yield of 46-67 % and typical ambipolar-transporting properties in SS-OLETs with symmetric gold electrodes. Comprehensive experimental and theoretical characterizations reveal the natural of ambipolar property for such blue-emissive DNaDBSOs-based materials is ascribed to a synergistic effect on lowering LUMO level and reduced electron injection barrier induced by the interfacial dipoles effect on gold electrodes due to the incorporation of appropriate DBSO unit. Finally, efficient electroluminescence properties with high-quality blue emission (CIE (0.179, 0.119)) and a narrow full-width at half-maximum of 48 nm are achieved for DNaDBSO-based SS-OLET, showing good spatial control of the recombination zone in conducting channel. This work provides a new avenue for designing ambipolar emissive organic semiconductors by incorporating the synergistic effect of energy level regulation and molecular-metal interaction, which would advance the development of superior optoelectronic materials and their high-density integrated optoelectronic devices and circuits.

Achieving Bright Organic Light-Emitting Field-Effect Transistors with Sustained Efficiency through Hybrid Contact Design

Organic light-emitting field-effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light-emitting diodes. However, these devices face a major challenge of imbalance charge transport, leading to a severe efficiency roll-off at high brightness. Here, we propose a solution to this challenge by introducing a transparent organic/inorganic hybrid contact with specially designed electronic structures. Our design aims to steadily accumulate the electrons injected into the emissive polymer, allowing the light-emitting interface to effectively capture more holes even when the hole current increases. Our numerical simulations show that the capture efficiency of these steady electrons will dominate charge recombination and lead to a sustained external quantum efficiency of 0.23% over 3 orders of magnitude of brightness (4 to 7700 cd/m²) and current density (1.2 to 2700 mA/cm²) from -4 to -100 V. The same enhancement is retained even after increasing the external quantum efficiency (EQE) to 0.51%. The high and tunable brightness with stable efficiency offered by hybrid-contact OLEFETs makes them ideal light-emitting devices for various applications. These devices have the potential to revolutionize the field of organic electronics by overcoming the fundamental challenge of imbalance charge transport.

Recent advances in n-type and ambipolar organic semiconductors and their multi-functional applications

Organic semiconductors have received broad attention and research interest due to their unique integration of semiconducting properties with structural tunability, intrinsic flexibiltiy and low cost. In order to meet the requirements of organic electronic devices and their integrated circuits, p-type, n-type and ambipolar organic semiconductors are all necessary. However, due to the limitation in both material synthesis and device fabrication, the development of n-type and ambipolar materials is quite behind that of p-type materials. Recent development in synthetic methods of organic semiconductors greatly enriches the range of n-type and ambipolar materials. Moreover, the newly developed materials with multiple functions also put forward multi-functional device applications, including some emerging research areas. In this review, we give a timely summary on these impressive advances in n-type and ambipolar organic semiconductors with a special focus on their synthesis methods and advanced materials with enhanced properties of charge carrier mobility, integration of high mobility and strong emission and thermoelectric properties. Finally, multi-functional device applications are further demonstrated as an example of these developed n-type and ambipolar materials.

Van der Waals Multilayer Heterojunction for Low-Voltage Organic RGB Area-Emitting Transistor Array

Organic light-emitting transistors (OLETs) have garnered considerable attention from academy and industry due to their potential applications in next-generation display technologies, multifunctional devices, and organic electrically pumped lasers. However, overcoming the trade-offs among power consumption, external quantum efficiency (EQE), and uniform area emission remains a long-standing issue for OLETs. Herein, a van der Waals multilayer heterojunction methodology is proposed to enhance the layer-to-layer interfacial interaction and contact, resulting in better dipole shielding, carrier transport, exciton recombination, and current density distribution. The prepared multilayer heterojunction OLET (MLH-OLET) array shows uniform and bright RGB area emission and low operating voltage (<30 V among the lowest applied voltage of reported lateral LETs). Additionally, a high brightness under area emission of 1060 cd m^-2 , a high EQE value of 0.85%, and a high loop stability (over 380 cycles, outperforming state-of-the-art OLETs) indicate that the proposed multilayer heterojunction is obviously superior to the reported lateral device configuration. The van der Waals multilayer heterojunction developed for the preparation of OLET arrays sufficiently meets the low-voltage, high-performance, and low-cost requirements of future display technologies.

Simultaneously improving the quality factor and outcoupling efficiency of organic light-emitting field-effect transistors with planar microcavity

Organic light-emitting field-effect transistors (OLEFETs) are regarded as an ideal device platform to achieve electrically pumped organic semiconductor lasers (OSLs). However, the incorporation of a high-quality resonator into OLEFETs is still challenging since the process usually induces irreparable deterioration to the electric-related emission performance of the device. We here propose a dual distributed Bragg reflector (DBR)-based planar microcavity, which is verified to be highly compatible with the OLEFETs. The dual DBR planar microcavity shows the great advantage of simultaneously promoting the quality (Q) factor and outcoupling efficiency of the device due to the reduced optical loss. As a result, a moderately high Q factor of ∼160, corresponding to EL spectrum linewidth as narrow as 3.2 nm, concomitantly with high outcoupling efficiency (∼7.1%) has been successfully obtained. Our results manifest that the dual DBR-based planar microcavity is a promising type of resonator, which might find potential applications in improving the spectra and efficiency performance of OLEFETs as well as in OLEFET-based electrically pumped OSLs.

New semi-ladder polymers for ambipolar organic light-emitting transistors

Organic light-emitting transistors (OLETs) combine the light-emitting and gate-modulated electrical switching functions in a single device. Over the past two decades, progress has been made in developing new fluorescent semiconductors and device engineering to improve the properties of OLETs. In this paper, we give a brief review of the achievement and disadvantages of the present polymer-based OLETs, while highlighting the recent developments in semi-ladder polymers from our lab for new electroluminescent materials. The special folded molecular structures and unique aggregation states make these polymers suitable for exploration as OLET materials. A short conclusion is provided with a discussion on the challenges and future perspectives in this field.

Molecular doped, color-tunable, high-mobility, emissive, organic semiconductors for light-emitting transistors

Developing high-mobility emissive organic semiconductors with tunable colors is crucial for organic light-emitting transistors (OLETs), a pivotal component of integrated optoelectronic devices, but remains a great challenge. Here, we demonstrate a series of color-tunable, high-mobility, emissive, organic semiconductors via molecular doping with a high-mobility organic semiconductor, 2,6-diphenylanthracene, as the host. The well-matched molecular structures and sizes with efficient energy transfer between the host and guest enable the intrinsically high charge transport with tunable colors. High mobility with the highest value >2 cm² V^-1 s^-1 and strong emission with photoluminescence quantum yield >15.8% are obtained for these molecular-doped organic semiconductors. Last, a large color gamut for constructed OLETs is up to 59% National Television System Committee standard, meanwhile with an extremely high current density approaching 326.4 kA cm^-2, showing great potential for full-color smart display, organic electrically pumped lasers and other related logic circuitries.

Construction of Laterally Asymmetric Heterojunctions with Sub-Micrometer Resolution by Hierarchical Self-Assembly of Polythiophene Nanofibers

Polymeric semiconductors are crucial candidates for the construction of next-generation flexible and printable electronic devices. By virtue of the successful preparation of monodispersed colloidal solution in orthogonal solvent, poly(3-hexylthiophene) (P3HT) nanofibers are developed into versatile building blocks for nanoelectronics and their compatibilities are verified with photolithographic lift-off technology. Then, the joint efforts from both the bottom-up hierarchical self-assembly and top-down self-alignment technology have led to the realization of lateral asymmetric heterojunctions with resolution better than 1 µm. As a result, planar photovoltaic devices incorporating N,N'-dioctyl-3,4,9,10-perylenedicarboximide and P3HT supramolecular nanowires as active components are constructed with the cathode-to-anode distance being tuned from ≈0.1 to 1-2 µm. Based on such a novel device configuration, an interesting phenomenon of channel-length-dependent photovoltaic efficiency is observed for the first time, strongly suggesting the impact of near-field light intensity on the performance of nanophotonic devices.

Application of Triplet-Triplet Annihilation Upconversion in Organic Optoelectronic Devices: Advances and Perspectives

Organic semiconductor materials have been widely used in various optoelectronic devices due to their rich optical and/or electrical properties, which are highly related to their excited states. Therefore, how to manage and utilize the excited states in organic semiconductors is essential for the realization of high-performance optoelectronic devices. Triplet-triplet annihilation (TTA) upconversion is a unique process of converting two non-emissive triplet excitons to one singlet exciton with higher energy. Efficient optical-to-electrical devices can be realized by harvesting sub-bandgap photons through TTA-based upconversion. In electrical-to-optical devices, triplets generated after the combination of electrons and holes also can be efficiently utilized via TTA, which resulted in a high internal conversion efficiency of 62.5%. Currently, many interesting explorations and significant advances have been demonstrated in these fields. In this review, a comprehensive summary of these intriguing advances on developing efficient TTA upconversion materials and their application in optoelectronic devices is systematically given along with some discussions. Finally, the key challenges and perspectives of TTA upconversion systems for further improvement for optoelectronic devices and other related research directions are provided. This review hopes to provide valuable guidelines for future related research and advancement in organic optoelectronics.

Organic Light-Emitting Transistors Entering a New Development Stage

Organic light-emitting transistors (OLETs) are possibly the smallest integrated optoelectronic devices that combine the switching and amplification mechanisms of organic field-effect transistors (OFETs) and the electroluminescent characteristic of organic light-emitting diodes (OLEDs). Such a unique architecture of OLETs makes them ideal for developing the next-generation display technology and electrically pumped lasers for miniaturized photonic devices and circuits. However, the development of OLETs has been slow. Recently, some exciting progress has been made with breakthroughs in high mobility emissive organic semiconductors, construction of high-performance OLETs, and fabrication of novel multifunctional OLETs. This recent slew of advances may represent the advent of a new development stage of OLETs and their related devices and circuits. In this paper, a detailed review of these fantastic advances is presented, with a special focus on the key points for developing high-performance OLETs. Finally, a brief conclusion is provided with a discussion on the challenges and future perspectives in this field.

Engineering Dielectric Materials for High-Performance Organic Light Emitting Transistors (OLETs)

Organic light emitting transistors (OLETs) represent a relatively new technology platform in the field of optoelectronics. An OLET is a device with a two-fold functionality since it behaves as a thin-film transistor and at the same time can generate light under appropriate bias conditions. This Review focuses mainly on one of the building blocks of such device, namely the gate dielectrics, and how it is possible to engineer it to improve device properties and performances. While many findings on gate dielectrics can be easily applied to organic light emitting transistors, we here concentrate on how this layer can be exploited and engineered as an active tool for light manipulation in this novel class of optoelectronic devices.

Efficient and low-voltage vertical organic permeable base light-emitting transistors

Organic light-emitting transistors, three-terminal devices combining a thin-film transistor with a light-emitting diode, have generated increasing interest in organic electronics. However, increasing their efficiency while keeping the operating voltage low still remains a key challenge. Here, we demonstrate organic permeable base light-emitting transistors; these three-terminal vertical optoelectronic devices operate at driving voltages below 5.0 V; emit in the red, green and blue ranges; and reach, respectively, peak external quantum efficiencies of 19.6%, 24.6% and 11.8%, current efficiencies of 20.6 cd A^-1, 90.1 cd A^-1 and 27.1 cd A^-1 and maximum luminance values of 9,833 cd m^-2, 12,513 cd m^-2 and 4,753 cd m^-2. Our simulations demonstrate that the nano-pore permeable base electrode located at the centre of the device, which forms a distinctive optical microcavity and regulates charge carrier injection and transport, is the key to the good performance obtained. Our work paves the way towards efficient and low-voltage organic light-emitting transistors, useful for power-efficient active matrix displays and solid-state lighting.

Synergy between Photoluminescence and Charge Transport Achieved by Finely Tuning Polymeric Backbones for Efficient Light-Emitting Transistor

The lack of design principle for developing high-performance polymer materials displaying strong fluorescence and high ambipolar charge mobilities limited their performance in organic light-emitting transistors (OLETs), electrically pumped organic laser, and other advanced electronic devices. A series of semiladder polymers by copolymerization of weak acceptors (TPTQ or TPTI) and weak donors (fluorene (F) or carbazole (C)) have been developed for luminescent and charge transporting properties. It was found that enhanced planarity, high crystallinity, and a delicate balance in interchain aggregation obtained in the new copolymer, TPTQ-F, contributed to high ambipolar charge mobilities and photoluminescent quantum yield. TPTQ-F showed excellent performance in solution-processed multilayered OLET devices with an external quantum efficiency (EQE) of 5.3%.

Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm² V⁻¹ s⁻¹ and EQE of 1.6% at a luminance of 2600 cd m⁻². Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

Electrochemiluminescent Transistors: A New Strategy toward Light-Emitting Switching Devices

Light-emitting transistors (LETs) have attracted a significant amount of interest as multifunctional building blocks for next-generation electronics and optoelectronic devices. However, it is challenging to obtain LETs with a high carrier mobility and uniform light-emission because the semiconductor channel should provide both the electrical charge transport and optical light-emission, and typical emissive semiconductors have low, imbalanced carrier mobilities. In this work, a novel device platform that adapts the electrochemiluminescence (ECL) principle in LETs, referred to as an ECL transistor (ECLT) is proposed. ECL is a light-emission phenomenon from electrochemically excited luminophores generated by redox reactions. A solid-state ECL electrolyte consisting of a network-forming polymer, ionic liquid, luminophore, and co-reactant is employed as the light-emitting gate insulator of the ECLT. Based on this construction, high-performance LETs that make use of various conventional non-emissive semiconductors (e.g., poly(3-hexylthiophene), zinc oxide, and reduced graphene oxide) are successfully demonstrated. All the devices exhibit a high mobility (0.9-10 cm² V^-1 s^-1 ) and a uniform light-emission. This innovative approach demonstrates a novel LET platform and provides a promising pathway to achieve significant breakthroughs to develop electronic circuits and optoelectronic applications.

Brush Printing Creates Polarized Green Fluorescence: 3D Orientation Mapping and Stochastic Analysis of Conductive Polymer Films

Brush printing is a unique method used to obtain uniaxially oriented films, whereby a polymer solution is brushed onto a substrate. However, there have been only a few reports on the brush-printing method. Here, we report the preparation of a uniaxially oriented film of a green light-emitting conductive polymer, poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT). The fluorescence polarization ratio of the oriented F8BT films was as high as 11.3, and the average orientation factor reached 0.74 ± 0.06. The orientation factor and the torsion angle of F8BT were visualized by two mappings of fluorescence and Raman spectral measurements by confocal spectromicroscopy, respectively. These two x-y mapping data with many pixels (∼750 pixels) were evaluated by x-y-z mapping of the film thickness at a single position and were used to reveal the three-dimensional (3D) orientation mechanism from a stochastic approach. Polarized green fluorescence originates from polymer chains uniaxially oriented along the brush direction. The high orientation for a film thickness < 100 nm is established by shear stress, faster capillary flow, and flow-induced chain extension for a thin solution film on a substrate. The high orientation factor was also demonstrated by a high brushing speed, whereas an optimized brushing speed existed. We found that this optimization is attributed to the property of a non-Newtonian fluid. By applying this brush-printing method to the fabrication of an optoelectrical device, polarized green electroluminescence was preliminarily demonstrated by the OLED assembled from an oriented F8BT film.

Efficient Organic Light-Emitting Transistors Based on High-Quality Ambipolar Single Crystals

A cyano-substituted styrene derivative is synthesized and successfully prepared to lamellate single crystals through precisely controlling the crystal growth conditions. The lamellate single crystals with regular edge and smooth surface display intrinsically ordered stacking and high quality, all of which are of importance for high optoelectronic performance. The single-component light-emitting transistors based on the lamellate crystals offer striking device performance in terms of record external quantum efficiency of 2.02%, exceeding the benchmark value in this field. Such organic light-emitting single crystals provide a versatile platform for designing and engineering their structures and optoelectronic properties toward light-emitting devices.

Foldable semi-ladder polymers: novel aggregation behavior and high-performance solution-processed organic light-emitting transistors

A critical issue in developing high-performance organic light-emitting transistors (OLETs) is to balance the trade-off between charge transport and light emission in a semiconducting material. Although traditional materials for organic light-emitting diodes (OLEDs) or organic field-effect transistors (OFETs) have shown modest performance in OLET devices, design strategies towards high-performance OLET materials and the crucial structure–performance relationship remain unclear. Our research effort in developing cross-conjugated weak acceptor-weak donor copolymers for luminescent properties lead us to an unintentional discovery that these copolymers form coiled foldamers with intramolecular H-aggregation, leading to their exceptional OLET properties. An impressive external quantum efficiency (EQE) of 6.9% in solution-processed multi-layer OLET devices was achieved.

Coiled foldamers with intramolecular H-aggregation in semi-ladder copolymers lead towards the highest EQE of 6.9% in solution-processed multi-layer OLETs.

Guiding Charge Transport in Semiconducting Carbon Nanotube Networks by Local Optical Switching

Photoswitchable, ambipolar field-effect transistors (FETs) are fabricated with dense networks of polymer-sorted, semiconducting single-walled carbon nanotubes (SWCNTs) in top-gate geometry with photochromic molecules mixed in the polymer matrix of the gate dielectric. Both hole and electron transport are strongly affected by the presence of spiropyran and its photoisomer merocyanine. A strong and persistent reduction of charge carrier mobilities and thus drain currents upon UV illumination (photoisomerization) and its recovery by annealing give these SWCNT transistors the basic properties of optical memory devices. Temperature-dependent mobility measurements and density functional theory calculations indicate scattering of charge carriers by the large dipoles of the merocyanine molecules and electron trapping by protonated merocyanine as the underlying mechanism. The direct dependence of carrier mobility on UV exposure is employed to pattern high- and low-resistance areas within the FET channel and thus to guide charge transport through the nanotube network along predefined paths with micrometer resolution. Near-infrared electroluminescence imaging enables the direct visualization of such patterned current pathways with good contrast. Elaborate mobility and thus current density patterns can be created by local optical switching, visualized and erased again by reverse isomerization through heating.

Design of High-Performance Organic Light-Emitting Transistors

Organic light-emitting transistors (OLETs) integrate the light-emitting and gate-modulated electrical switching functions in a single device. Over the past decades, progress has been made in developing new fluorescent semiconductors and device engineering that pushed efficiencies of OLET devices to 8%. However, this efficiency of transistors is still too low to be competitive with organic light-emitting diodes (OLEDs). Currently, there are relatively few suitable organic fluorescent semiconductors suitable for OLETs, and the mechanism of electroluminescence in the devices is still not fully understood. In this mini-review, we discuss the state of highly efficient OLETs and plausible approaches to those unsettled problems. Since this is a mini-review, we will not be able to cover all the excellent work in the literature. Readers are encouraged to read other excellent reviews published earlier.

Chain Coupling and Luminescence in High-Mobility, Low-Disorder Conjugated Polymers

Optoelectronic devices based on conjugated polymers often rely on multilayer device architectures, as it is difficult to design all the different functional requirements, in particular the need for efficient luminescence and fast carrier transport, into a single polymer. Here we study the photophysics of a recently discovered class of conjugated polymers with high charge carrier mobility and low degree of energetic disorder and investigate whether it is possible in this system to achieve by molecular design a high photoluminescence quantum yield without sacrificing carrier mobility. Tracing exciton dynamics over femtosecond to microsecond time scales, we show that nearly all nonradiative exciton recombination arises from interactions between chromophores on different chains. We evaluate the temperature dependence and role of electron-phonon coupling leading to fast internal conversion in systems with strong interchain coupling and the extent to which this can be turned off by varying side chain substitution. By sterically decreasing interchain interaction, we present an effective approach to increase the fluorescence quantum yield of low-energy gap polymers. We present a red-NIR-emitting amorphous polymer with the highest reported film luminescence quantum efficiency of 18% whose mobility concurrently exceeds that of amorphous-Si. This is a key result toward the development of single-layer optoelectronic devices that require both properties.

High-Efficiency Single-Component Organic Light-Emitting Transistors

Construction of high-performance organic light-emitting transistors (OLETs) remains challenging due to the limited desired organic semiconductor materials. Here, two superior high mobility emissive organic semiconductors, 2,6-diphenylanthracene (DPA) and 2,6-di(2-naphthyl) anthracene (dNaAnt), are introduced into the construction of OLETs. By optimizing the device geometry for balanced ambipolar efficient charge transport and using high-quality DPA and dNaAnt single crystals as active layers, high-efficiency single-component OLETs are successfully fabricated, with the demonstration of strong and spatially controlled light emission within both p- and n- conducting channels and output of high external quantum efficiency (EQE). The obtained EQE values in current devices are approaching 1.61% for DPA-OLETs and 1.75% for dNaAnt-based OLETs, respectively, which are the highest EQE values for single-component OLETs in the common device configuration reported so far. Moreover, high brightnesses of 1210 and 3180 cd m^-2 with current densities up to 1.3 and 8.4 kA cm^-2 are also achieved for DPA- and dNaAnt-based OLETs, respectively. These results demonstrate the great potential applications of high mobility emissive organic semiconductors for next-generation rapid development of high-performance single-component OLETs and their related organic integrated electro-optical devices.

Full-surface emission of graphene-based vertical-type organic light-emitting transistors with high on/off contrast ratios and enhanced efficiencies

Surface-emitting organic light-emitting transistors (OLETs) could well be a core element in the next generation of active-matrix (AM) displays. We report some of the key characteristics of graphene-based vertical-type organic light-emitting transistors (Gr-VOLETs) composed of a single-layer graphene source and an emissive channel layer. It is shown that FeCl₃ doping of the graphene source results in a significant improvement in the device performance of Gr-VOLETs. Using the FeCl₃-doped graphene source, it is demonstrated that the full-surface electroluminescent emission of the Gr-VOLET can be effectively modulated by gate voltages with high luminance on/off ratios (~10⁴). Current efficiencies are also observed to be much higher than those of control organic light-emitting diodes (OLEDs), even at high luminance levels exceeding 500 cd/m². Moreover, we propose an operating mechanism to explain the improvements in the device performance i.e., the effective gate-bias-induced modulation of the hole tunnelling injection at the doped graphene source electrode. Despite its inherently simple structure, our study highlights the significant improvement in the device performance of OLETs offered by the FeCl₃-doped graphene source electrode.

Optically switchable organic light-emitting transistors

Organic light-emitting transistors are pivotal components for emerging opto- and nanoelectronics applications, such as logic circuitries and smart displays. Within this technology sector, the integration of multiple functionalities in a single electronic device remains the key challenge. Here we show optically switchable organic light-emitting transistors fabricated through a judicious combination of light-emitting semiconductors and photochromic molecules. Irradiation of the solution-processed films at selected wavelengths enables the efficient and reversible tuning of charge transport and electroluminescence simultaneously, with a high degree of modulation (on/off ratios up to 500) in the three primary colours. Different emitting patterns can be written and erased through a non-invasive and mask-free process, on a length scale of a few micrometres in a single device, thereby rendering this technology potentially promising for optically gated highly integrated full-colour displays and active optical memory.

Organic Light-Emitting Field-Effect Transistors: Device Geometries and Fabrication Techniques

Organic light-emitting transistors (OLETs), as novel and attractive kinds of organic electronic devices, have gained extensive attention from both academia and industry. The unique device architectures can simultaneously combine the electrical switching functionality of organic field-effect transistors and the light generation capability of organic light-emitting diodes in a single device, thereby holding great promise for reducing the complicated processes of next-generation pixel circuitry. This review involves the design, fabrication, and applications of OLETs with a comprehensive coverage of this field with the aim to give a deep insight into the intrinsic mechanisms of devices. Challenges and future prospects of OLETs are also discussed.

Role of Bimolecular Exciton Kinetics in Controlling the Efficiency of Organic Light-Emitting Diodes

Here, we have carried out a spectroscopic investigation on the operational organic light-emitting diodes (OLEDs) to determine the role of emission layer thickness on the optoelectronic performance of OLEDs based on a poly(9,9-dioctylfluorene- alt-benzothiadiazole) (F8BT) copolymer system. Our study shows that delayed fluorescence (DF) via triplet-triplet annihilation (TTA) contributes significantly to boost the OLED efficiency through its fractional contribution. Interestingly, we note that DF contribution varies as a function of the emissive layer thickness. From the time-resolved electroluminescence (TREL) and triplet absorption (under electrical excitation) studies, we have seen that the emissive layer thickness controls triplet exciton generation and decay processes. From TREL, we have also shown that singlet-triplet annihilation (STA) is the dominant fluorescence quenching mechanism in bulk of the emissive layer, whereas thinner devices have significant exciton quenching at the interface of the injection layer/F8BT. The strength of STA differs in thin versus thick samples, which has been correlated with the spectral & spatial overlap integral of singlet and triplet states. Hence, STA strength and triplet population density are critical parameters for an explanation of high efficiency in unusually thick F8BT OLEDs.

Brightness Enhancement in Pulsed-Operated Perovskite Light-Emitting Transistors

Perovskite light-emitting field-effect transistors (PeLEFETs) provide a versatile device architecture to control transport and electroluminescence properties of hybrid perovskites, enabling injection of high charge carrier density and spatial control of the radiative recombination zone. Ionic screening and organic cation polarization effects typical of metal-halide perovskites, however, critically affect PeLEFET efficiency and reliability. In this work, we demonstrate a new device operation mode based on high-frequency modulation of the applied voltages, which allows significant reduction of ionic drift/screening in methylammonium lead iodide light-emitting transistors. In optimized top contact PeLEFETs, AC operation results in brighter and more uniform electroluminescence compared to DC-driven devices, whereas high-frequency modulation enables electroluminescence emission up to room temperature.

Contact Resistance in Ambipolar Organic Field-Effect Transistors Measured by Confocal Photoluminescence Electro-Modulation Microscopy

Although it is theoretically expected that all organic semiconductors support ambipolar charge transport, most organic transistors either transport holes or electrons effectively. Single-layer ambipolar organic field-effect transistors enable the investigation of different mechanisms in hole and electron transport in a single device since the device architecture provides a controllable planar pn-junction within the transistor channel. However, a direct comparison of the injection barriers and of the channel conductivities between electrons and holes within the same device cannot be measured by standard electrical characterization. This article introduces a novel approach for determining threshold gate voltages for the onset of the ambipolar regime from the position of the pn-junction observed by photoluminescence electro-modulation (PLEM) microscopy. Indeed, the threshold gate voltage in the ambipolar bias regime considers a vanishing channel length, thus correlating the contact resistance. PLEM microscopy is a valuable tool to directly compare the contact and channel resistances for both carrier types in the same device. The reported results demonstrate that designing the metal/organic-semiconductor interfaces by aligning the bulk metal Fermi levels to the highest occupied molecular orbital or lowest unoccupied molecular orbital levels of the organic semiconductors is a too simplistic approach for optimizing the charge-injection process in organic field-effect devices.

Novel Organic Phototransistor-Based Nonvolatile Memory Integrated with UV-Sensing/Green-Emissive Aggregation Enhanced Emission (AEE)-Active Aromatic Polyamide Electret Layer

A novel aggregation enhanced emission (AEE)-active polyamide TPA-CN-TPE with a high photoluminesence characteristic was successfully synthesized by the direct polymerization of 4-cyanotriphenyl diamine (TPA-CN) and tetraphenylethene (TPE)-containing dicarboxylic acid. The obtained luminescent polyamide plays a significant role as the polymer electret layer in organic field-effect transistors (OFETs)-type memory. The strong green emission of TPA-CN-TPE under ultraviolet (UV) irradiation can be directly absorbed by the pentacene channel, displaying a light-induced programming and voltage-driven erasing organic phototransistor-based nonvolatile memory. Memory window can be effectively manipulated between the programming and erasing states by applying UV light illumination and electrical field, respectively. The photoinduced memory behavior can be maintained for over 10⁴ s between these two states with an on/off ratio of 10⁴, and the memory switching can be steadily operated for many cycles. With high photoresponsivity ( R) and photosensitivity ( S), this organic phototransistor integrated with AEE-active polyamide electret layer could serve as an excellent candidate for UV photodetectors in optical applications. For comparison, an AEE-inactive aromatic polyimide TPA-PIS electret with much weaker solid-state emission was also applied in the same OFETs device architecture, but this device did not show any UV-sensitive and UV-induced memory characteristics, which further confirmed the significance of the light-emitting capability of the electret layer.

High-Performance, Solution-Processed Quantum Dot Light-Emitting Field-Effect Transistors with a Scandium-Incorporated Indium Oxide Semiconductor

Light-emitting field-effect transistors (LEFETs) have attained great attention due to their special characteristics of both the switching capacity and the electroluminescence capacity. However, high-performance LEFETs with high mobility, high brightness, and high efficiency have not been realized due to the difficulty in developing high electron and hole mobility materials with suitable band structures. In this paper, quantum dot hybrid LEFETs (QD-HLEFETs) combining high-luminous-efficiency quantum dots (QDs) and a solution-processed scandium-incorporated indium oxide (Sc:In₂O₃) semiconductor were demonstrated. The red QD-HLEFET showed high electrical and optical performance with an electron mobility of 0.8 cm² V^-1 s^-1, a maximum brightness of 13 400 cd/m², and a maximum external quantum efficiency of 8.7%. The high performance of the QD-HLEFET is attributed to the good energy band matching between Sc:In₂O₃ and QDs and the balanced hole and electron injection (less exciton nonradiative recombination). In addition, incorporation of Sc into In₂O₃ can suppress the oxygen vacancy and free carrier generation and brings about excellent current and optical modulation (the on/off current ratio is 10⁵ and the on/off brightness ratio is 10⁶).

Cyano-substituted benzochalcogenadiazole-based polymer semiconductors for balanced ambipolar organic thin-film transistors

Two new cyano-substituted benzochalcogenadiazoles were copolymerized with bithiophene, and the polymers show well balanced ambipolarity in transistors.

Aromatic Extension at 2,6-Positions of Anthracene toward an Elegant Strategy for Organic Semiconductors with Efficient Charge Transport and Strong Solid State Emission

Organic semiconductors integrating excellent charge transport with efficient solid emission are very challenging to be attained in the construction of light-emitting transistors and even for realization of electrically pumped organic lasers. Herein, we introduce naphthyl units at 2,6-positions of anthracene to achieve 2,6-di(2-naphthyl)anthracene (dNaAnt), which adopts J-aggregated mode in the solid state as a balanced strategy for excellent charge transporting and efficient solid state emission. Single crystal field-effect transistors show mobility up to 12.3 cm²·V^-1·s^-1 and a photoluminescence quantum yield of 29.2% was obtained for dNaAnt crystals. Furthermore, organic light-emitting transistors (OLETs) based on dNaAnt single crystals distribute outstanding balanced ambipolar charge transporting property (μ_h = 1.10 cm²·V^-1·s^-1, μ_e = 0.87 cm²·V^-1·s^-1) and spatially controllable emission, which is one of the best performances for OLETs.

Highly Luminescent 2D-Type Slab Crystals Based on a Molecular Charge-Transfer Complex as Promising Organic Light-Emitting Transistor Materials

A new 2:1 donor (D):acceptor (A) mixed-stacked charge-transfer (CT) cocrystal comprising isometrically structured dicyanodistyrylbenzene-based D and A molecules is designed and synthesized. Uniform 2D-type morphology is manifested by the exquisite interplay of intermolecular interactions. In addition to its appealing structural features, unique optoelectronic properties are unveiled. Exceptionally high photoluminescence quantum yield (Φ_F ≈ 60%) is realized by non-negligible oscillator strength of the S₁ transition, and rigidified 2D-type structure. Moreover, this luminescent 2D-type CT crystal exhibits balanced ambipolar transport (µ_h and µ_e of ≈10^-4 cm² V^-1 s^-1 ). As a consequence of such unique optoelectronic characteristics, the first CT electroluminescence is demonstrated in a single active-layered organic light-emitting transistor (OLET) device. The external quantum efficiency of this OLET is as high as 1.5% to suggest a promising potential of luminescent mixed-stacked CT cocrystals in OLET applications.

Electrical pumping and tuning of exciton-polaritons in carbon nanotube microcavities

Exciton-polaritons are hybrid light-matter particles that form upon strong coupling of an excitonic transition to a cavity mode. As bosons, polaritons can form condensates with coherent laser-like emission. For organic materials, optically pumped condensation was achieved at room temperature but electrically pumped condensation remains elusive due to insufficient polariton densities. Here we combine the outstanding optical and electronic properties of purified, solution-processed semiconducting (6,5) single-walled carbon nanotubes (SWCNTs) in a microcavity-integrated light-emitting field-effect transistor to realize efficient electrical pumping of exciton-polaritons at room temperature with high current densities (>10 kA cm^-2) and tunability in the near-infrared (1,060 nm to 1,530 nm). We demonstrate thermalization of SWCNT polaritons, exciton-polariton pumping rates ∼10⁴ times higher than in current organic polariton devices, direct control over the coupling strength (Rabi splitting) via the applied gate voltage, and a tenfold enhancement of polaritonic over excitonic emission. This powerful material-device combination paves the way to carbon-based polariton emitters and possibly lasers.

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

Poly(naphthalene diimide) vinylene: solid state red emission and semiconducting properties for transistors

Dual functional conjugated polymer PNV exhibits a high red emission in the solid state and n-type semiconducting properties for OFETs.

High-Mobility Ambipolar Organic Thin-Film Transistor Processed From a Nonchlorinated Solvent

Polymer semiconductor PDPPF-DFT, which combines furan-substituted diketopyrrolopyrrole (DPP) and a 3,4-difluorothiophene base, has been designed and synthesized. PDPPF-DFT polymer semiconductor thin film processed from nonchlorinated hexane is used as an active layer in thin-film transistors. As a result, balanced hole and electron mobilities of 0.26 and 0.12 cm(2)/(V s) are achieved for PDPPF-DFT. This is the first report of using nonchlorinated hexane solvent for fabricating high-performance ambipolar thin-film transistor devices.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs.

Hybrid Area-Emitting Transistors: Solution Processable and with High Aperture Ratios

Area emission is realized in all-solution-processed hybrid light-emitting transistors (HLETs). A new HLET design is presented with increased aperture ratio, and optical and electrical characteristics are shown.

Photo-reactive charge trapping memory based on lanthanide complex

Traditional utilization of photo-induced excitons is popularly but restricted in the fields of photovoltaic devices as well as photodetectors, and efforts on broadening its function have always been attempted. However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. Here, we demonstrate an OFET memory containing a novel organic lanthanide complex Eu(tta)₃ppta (Eu(tta)₃ = Europium(III) thenoyltrifluoroacetonate, ppta = 2-phenyl-4,6-bis(pyrazol-1-yl)-1,3,5-triazine), in which the photo-induced charges can be successfully trapped and detrapped. The luminescent complex emits intense red emission upon ultraviolet (UV) light excitation and serves as a trapping element of holes injected from the pentacene semiconductor layer. Memory window can be significantly enlarged by light-assisted programming and erasing procedures, during which the photo-induced excitons in the semiconductor layer are separated by voltage bias. The enhancement of memory window is attributed to the increasing number of photo-induced excitons by the UV light. The charges are stored in this luminescent complex for at least 10⁴ s after withdrawing voltage bias. The present study on photo-assisted novel memory may motivate the research on a new type of light tunable charge trapping photo-reactive memory devices.

Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m², ON/OFF ratio > 10⁴ and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (f_cut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications.

Enhanced performance in fluorene-free organometal halide perovskite light-emitting diodes using tunable, low electron affinity oxide electron injectors

Fluorene-free perovskite light-emitting diodes (LEDs) with low turn-on voltages, higher luminance and sharp, color-pure electroluminescence are obtained by replacing the F8 electron injector with ZnO, which is directly deposited onto the CH3NH3PbBr3 perovskite using spatial atmospheric atomic layer deposition. The electron injection barrier can also be reduced by decreasing the ZnO electron affinity through Mg incorporation, leading to lower turn-on voltages.