Device Engineered Organic Transistors for Flexible Sensing Applications

Tuning phase separation in DPPDTT/PMMA blend to achieve molecular self-assembly in the conducting polymer for organic field effect transistors

The semiconductor/insulator blends for organic field-effect transistors are a potential solution to improve the charge transport in the active layer by inducing phase separation in the blends. However, the technique is less investigated for long-chain conducting polymers such as Poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5-di(thien-2-yl)thieno [3,2-b]thiophene)] (DPPDTT), and lateral phase separation is generally reported due to the instability during solvent evaporation, which results in degraded device performance. Herein, we report how to tailor the dominant mechanism of phase separation in such blends and the molecular assembly of the polymer. For DPPDTT/PMMA blends, we found that for higher DPPDTT concentrations (more than 75%) where the vertical phase separation mechanism is dominant, PMMA assisted in the self-assembly of DPPDTT to form nanowires and micro-transport channels on top of PMMA. The formation of nanowires yielded 13 times higher mobility as compared to pristine devices. For blend ratios with DPPDTT ≤ 50%, both the competing mechanisms, vertical and lateral phase separation, are taking place. It resulted in somewhat lower charge carrier mobilities. Hence, our results show that by systematic tuning of the blend ratio, PMMA can act as an excellent binding material in long-chain polymers such as DPPDTT and produce vertically stratified and aligned structures to ensure high mobility devices.

Recent Advances in Field Effect Transistor Biosensors: Designing Strategies and Applications for Sensitive Assay

In comparison with traditional clinical diagnosis methods, field-effect transistor (FET)-based biosensors have the advantages of fast response, easy miniaturization and integration for high-throughput screening, which demonstrates their great technical potential in the biomarker detection platform. This mini review mainly summarizes recent advances in FET biosensors. Firstly, the review gives an overview of the design strategies of biosensors for sensitive assay, including the structures of devices, functionalization methods and semiconductor materials used. Having established this background, the review then focuses on the following aspects: immunoassay based on a single biosensor for disease diagnosis; the efficient integration of FET biosensors into a large-area array, where multiplexing provides valuable insights for high-throughput testing options; and the integration of FET biosensors into microfluidics, which contributes to the rapid development of lab-on-chip (LOC) sensing platforms and the integration of biosensors with other types of sensors for multifunctional applications. Finally, we summarize the long-term prospects for the commercialization of FET sensing systems.

Impact of Planar and Vertical Organic Field-Effect Transistors on Flexible Electronics

The development of flexible and conformable devices, whose performance can be maintained while being continuously deformed, provides a significant step toward the realization of next-generation wearable and e-textile applications. Organic field-effect transistors (OFETs) are particularly interesting for flexible and lightweight products, because of their low-temperature solution processability, and the mechanical flexibility of organic materials that endows OFETs the natural compatibility with plastic and biodegradable substrates. Here, an in-depth review of two competing flexible OFET technologies, planar and vertical OFETs (POFETs and VOFETs, respectively) is provided. The electrical, mechanical, and physical properties of POFETs and VOFETs are critically discussed, with a focus on four pivotal applications (integrated logic circuits, light-emitting devices, memories, and sensors). It is pointed out that the flexible function of the relatively newer VOFET technology, along with its perspective on advancing the applicability of flexible POFETs, has not been reviewed so far, and the direct comparison regarding the performance of POFET- and VOFET-based flexible applications is most likely absent. With discussions spanning printed and wearable electronics, materials science, biotechnology, and environmental monitoring, this contribution is a clear stimulus to researchers working in these fields to engage toward the plentiful possibilities that POFETs and VOFETs offer to flexible electronics.

Highly-stable flexible pressure sensor using piezoelectric polymer film on metal oxide TFT

In this study, a flexible pressure sensor with highly stable performance is presented. The pressure sensor was fabricated to work under low voltage conditions by using a high mobility amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) and a stretched polyvinylidene fluoride (PVDF) film. To prepare a stable sensor suitable for practical use, we designed a device structure that shields ambient noise by grounding the control gate. The shielding structure significantly improves the stability of the device. Moreover, the sensor was fabricated on a flexible substrate and delaminated via a laser lift-off (LLO) technique to meet the urgent needs for flexibility. The pressure sensor showed good sensitivity and reliability over a pressure ranging from 0 to 75 kPa which covers the human touch pressure range. Especially, good linearity over a wide pressure range and high stability over 1000 repeated loadings were realized. Due to the simple structure, the pressure sensor demonstrates the advantage of being inexpensive to be manufactured and holds the potential to be integrated into the display backplane. Therefore, the proposed sensor has great potential in the production of flexible touch screens, human–machine interacting applications, and even electronic skins in the future.

Flexible piezoelectric pressure sensor using a-IGZO TFT was prepared and a shielding structure was proposed to stabilize the response current.

Advanced Organic Transistor-Based Sensors Utilizing a Solvatochromic Medium with Twisted Intramolecular Charge-Transfer Behavior and Its Application to Ammonia Gas Detection

Here, we designed and developed an organic field-effect transistor (OFET)-based gas sensor by applying solvatochromic dye (Nile red, NR) with twisted intramolecular charge-transfer (TICT) behavior depending on the polarity of the surrounding molecules, as an auxiliary NR sensing medium (aNR-SM). As a polar molecule approaches, intra-charge transfers from the donor diethylamine group to the ketone group occur in the NR molecule, resulting in the twisting of the donor functional group and thereby increasing its dipole moment. Using this characteristic, NR was applied as an auxiliary sensing medium to the OFET for detecting ammonia (NH₃), a representative toxic gas. The Top-NR case, where the aNR-SM covers only the top of the organic semiconductor layer, showed the best gas sensing performance, and its response and recovery rates were improved by 46 and 94%, respectively, compared to the pristine case. More importantly, a sensitivity of 0.87 ± 0.045 ppm^-1 % was measured, having almost perfect linearity (0.999) over the range of measured NH₃ concentrations, which is the result of solving the saturation problem in the sensing characteristics of the OFET-based gas sensor. Our result not only improved the sensing performance of the OFET-based sensor but also made an important advance in that the reliability of the sensing performance was easily secured by applying solvatochromic and TICT behaviors of an auxiliary sensing medium.

A Bioinspired Adhesive-Integrated-Agent Strategy for Constructing Robust Gas-Sensing Arrays

Gas sensors based on organic molecules are attractive for their tailored molecular structures and controllable functions, but weak interfacial adhesion between sensing materials and supporting substrates has severely hampered their practical applications, particularly in harsh environments. Here, inspired by the combined anchoring-recognizing feature of natural olfactory systems, an adhesive-integrated-agent strategy to integrate the adhesive unit (poly(dimethylsiloxane)) with the sensing unit (organoplatinum(II)) into one chemistry entity, creating robust and sensitive nanobelt array gas sensors is demonstrated. Systematic theoretical and experimental studies reveal that incorporating adhesive units significantly enhances the interfacial adhesion of the array sensors and gas-bridged super-exchange electronic couplings of sensing units ensure their efficient gas-sensing performance. The high shear strength of ≈7.05 × 10⁶ N m^-2 allows these arrays to resist aggressive ultrasonication, tape peeling, or repeated bending without compromising their sensing performance. This molecular engineering strategy opens a new guideline to develop robust gas sensors.

Tailored Solution-Based N-heterotriangulene Thin Films: Unravelling the Self-Assembly

The ability of a series of bridged triarylamines, so‐called N‐heterotriangulenes, to form multilayer‐type 2D‐extended films via a solution‐based processing method was examined using complementary microscopic techniques. We found that the long‐range order, crystallinity, and layer thickness decisively depend on the nature of the substituents attached to the polycyclic backbone. Owing to their flat core unit, compounds exhibiting a carbonyl unit at the bridge position provide a superior building block as compared to thioketone‐bridged derivatives. In addition, nature and length of the peripheral substituents affect the orientation of the aromatic core unit within highly crystalline films. Hence, our results stress the significance of a suitable molecular framework and provide deeper understanding of structure formation in 2D‐confined surroundings for such compounds.

Study of the Photoluminescence Characteristics of 4,4'-((1E,1'E)-Quinoxaline-2,3-diylbis(ethene-2,1-diyl))bis(N,N-dimethylaniline)

A comparative investigation on the photophysical properties of a quinoxaline derivative 4,4'-((1E,1'E)-quinoxaline-2,3-diylbis(ethene-2,1-diyl))bis(N,N-dimethylaniline) (QDMA2) was performed by employing many spectroscopies. Based on the pump-dump/push-probe measurement, it is found that a solvent-stabilized charge-transfer state can participate in the relaxation of excited QDMA2 with increasing solvent polarity. Meanwhile, the aggregated QDMA2 molecules were engineered into the organic light-emitting diode test, which showed a correlated color temperature value of 1875 K. With the help of a diamond anvil cell, the pressure-dependent photoluminescence of aggregated QDMA2 shows that the intermolecular interaction can affect the color and intensity of photoluminescence through adjusting the band gap and irradiative channel of the aggregated molecules. These results are important for understanding the structure-property relationships and the rational design of functional materials for optoelectronic applications.

Cobweb-like, Ultrathin Porous Polymer Films for Ultrasensitive NO2 Detection

Gas sensors based on polymer field-effect transistors (FETs) have drawn much attention owing to the inherent merits of specific selectivity, low cost, and room temperature operation. Ultrathin (<10 nm) and porous polymer semiconductor films offer a golden opportunity for achieving high-performance gas sensors. However, wafer-scale fabrication of such high-quality polymer films is of great challenge and has rarely been realized before. Herein, the first demonstration of 4 in. wafer-scale, cobweb-like, and ultrathin porous polymer films is reported via a one-step phase-inversion process. This approach is extremely simple and universal for constructing various ultrathin porous polymer semiconductor films. Thanks to the abundant pores, ultrathin size, and high charge-transfer efficiency of the prepared polymer films, our gas sensors exhibit many superior advantages, including ultrahigh response (2.46 × 10⁶%), low limit of detection (LOD) (<1 ppm), and excellent selectivity. Thus, the proposed fabrication strategy is exceptionally promising for mass manufacturing of low-cost high-performance polymer FET-based gas sensors.

Chemical potentials of electric double layers at metal-electrolyte interfaces: dependence on electrolyte concentration and electrode materials, and application to field-effect transistors

When a metal is soaked in an electrolyte solution, the metal and solution affect each other through the formation of electric double layers (EDLs) at their interfaces. The EDLs at metal-electrolyte interfaces can realize high-density charge-carrier injections and accumulations, and thus have recently attracted attention for their potential application to energy storage, and electronic and electrochemical devices. In such EDL-based devices, including field-effect transistors (FETs), the potential energy of surface electrons in the metal electrodes (EM) governs the transistor device performance. This is in clear contrast to redox-driven electrochemical devices such as dye-sensitized solar cells and electrochromic devices, whose performance is primarily governed by the potentials of the redox-active species. However, there has been no systematic research to bridge the distance between metal electrons and electrolyte ions. In the present study, we carefully examined the dependence of EM of ITO, Au and Pt electrodes on the concentration of the PEG solutions of LiCl and MgCl2, because it has been well established that the chemical potential of electrolyte solutions is dependent on the solution concentrations. Our results showed that, at the same electrolyte concentration, the values of EM increased in the order of ITO, Au and Pt; moreover, on the same electrode, EM showed linear decreases as a function of the logarithm of the electrolyte concentrations. To understand these behaviors, we developed a theoretical treatment of the EDLs based on the simple Gouy-Chapman model, and obtained the theoretical expressions of EM in terms of the concentration of electrolyte and the work function of the metal electrode (ΦM), which were found to successfully explain the dependences of EM on the electrolyte concentration and the electrode materials. We also examined the EDL-FETs of platinum phthalocyanine (PtPc), with various LiCl-PEG solutions of different concentrations as gate electrolytes. The threshold voltage eVT and EM exhibited a linear relation, which was well explained by the relation between EM and the valence band energy EVB of PtPc. The transfer characteristics at various gate voltage VG were found to be well normalized by a function of eVG + EM.

Realization of an Ultrasensitive and Highly Selective OFET NO2 Sensor: The Synergistic Combination of PDVT-10 Polymer and Porphyrin-MOF

Organic field-effect transistors (OFETs) are emerging as competitive candidates for gas sensing applications due to the ease of their fabrication process combined with the ability to readily fine-tune the properties of organic semiconductors. Nevertheless, some key challenges remain to be addressed, such as material degradation, low sensitivity, and poor selectivity toward toxic gases. Appropriately, a heterojunction combination of different sensing layers with multifunctional capabilities offers great potential to overcome these problems. Here, a novel and highly sensitive receptor layer is proposed encompassing a porous 3D metal-organic framework (MOF) based on isostructural-fluorinated MOFs acting as an NO₂ specific preconcentrator, on the surface of a stable and ultrathin PDVT-10 organic semiconductor on an OFET platform. Here, with this proposed combination we have unveiled an unprecedented 700% increase in sensitivity toward NO₂ analyte in contrast to the pristine PDVT-10. The resultant combination for this OFET device exhibits a remarkable lowest detection limit of 8.25 ppb, a sensitivity of 680 nA/ppb, and good stability over a period of 6 months under normal laboratory conditions. Further, a negligible response (4.232 nA/%RH) toward humidity in the range of 5%-90% relative humidity was demonstrated using this combination. Markedly, the obtained results support the use of the proposed novel strategy to achieve an excellent sensing performance with an OFET platform.

Interface Engineering in Organic Field-Effect Transistors: Principles, Applications, and Perspectives

Heterogeneous interfaces that are ubiquitous in optoelectronic devices play a key role in the device performance and have led to the prosperity of today's microelectronics. Interface engineering provides an effective and promising approach to enhancing the device performance of organic field-effect transistors (OFETs) and even developing new functions. In fact, researchers from different disciplines have devoted considerable attention to this concept, which has started to evolve from simple improvement of the device performance to sophisticated construction of novel functionalities, indicating great potential for further applications in broad areas ranging from integrated circuits and energy conversion to catalysis and chemical/biological sensors. In this review article, we provide a timely and comprehensive overview of current efficient approaches developed for building various delicate functional interfaces in OFETs, including interfaces within the semiconductor layers, semiconductor/electrode interfaces, semiconductor/dielectric interfaces, and semiconductor/environment interfaces. We also highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits, which have been neglected in most previous reviews. This review will provide a fundamental understanding of the interplay between the molecular structure, assembly, and emergent functions at the molecular level and consequently offer novel insights into designing a new generation of multifunctional integrated circuits and sensors toward practical applications.

Understanding molecular surface doping of large bandgap organic semiconductors and overcoming the contact/access resistance in organic field-effect transistors

The contact resistance (Rc) and the effective carrier mobility (μeff) are considered as the important indicators of the performance of organic field-effect transistors (OFETs). Conventionally, the contact resistance is regarded as the interface effect between the metal electrodes and the organic semiconductors, while the carrier mobility is correlated to the crystallinity and π-π stacking of the organic molecules. In the staggered OFETs, Rc is actually closely correlated to μeff through the channel sheet resistance. Besides, the accuracy of the carrier mobility directly extracted from the non-ideal transfer curves with significant contact effect is always questionable. Herein, a diffusion-lead surface doping approach is employed to improve the contact resistance and mobility issues simultaneously. By suppressing the trap states in the sublimated 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) organic semiconductor with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ), we observed a 3-fold increase in the carrier mobility from 0.5 to 1.6 cm2 V-1 s-1, and the Rc also drops remarkably from 25.7 kΩ cm to 5.2 kΩ cm. Moreover, the threshold voltage (VTH), subthreshold swing (SS) and the bias stability of the OFETs are also significantly improved. Based on the detailed characterization of the C8-BTBT film upon surface doping, including X-ray diffraction (XRD) for the film crystallinity, Kelvin probe force microscopy (KPFM) for the surface potential, trap state investigation by density of states (DOS) measurement and electrical circuit modeling for partial doping analysis, we confirmed that the spontaneous charge transfer process due to the diffusion of the F4-TCNQ dopants in the C8-BTBT matrix can lead to an effective trap filling. This technique and findings can be potentially developed into a general approach for the improvement of different performance parameters of OFETs.

Architecting layered molecular packing in substituted benzobisbenzothiophene (BBBT) semiconductor crystals

The construction of layered molecular packing structures in a non-layered crystalline material, benzobisbenzothiophene (BBBT), was achieved by employing long-alkyl and phenyl substituents, leading to high-performance organic thin-film transistors.

A Humid-Air-Operable, NO2-Responsive Polymer Transistor Series Circuit with Improved Signal-to-Drift Ratio Based on Polymer Semiconductor Oxidation

A subparts per million-sensitive nitrogen dioxide (NO₂) sensing circuit with improved humid air stability was realized incorporating UV-ozone treatment on a poly(bisdodecylquaterthiophene)/polystyrene blend film. The circuit consisted of a pair of organic field-effect transistors (OFETs) in series, one OFET with and one without this treatment. In contrast to most previous OFET sensors, the readout was obtained from the voltage V_out at a point between the OFETs. The circuit showed a low detection limit (200 ppb) toward NO₂ and greatly reduced the voltage drift in the humid environment compared to the current drift of the circuit or the individual OFETs because of the balance of conductance drifts on either side of the readout point, which differs from the existing OFET-based sensors. By using V_out as the detection parameter, the sensitivity of the circuit approaches 25 and 400% for NO₂ concentrations of 200 ppb and 20 ppm, respectively. Moreover, the V_out is substantial enough to be easily measured by a voltmeter, which could remove the need for complex equipment (semiconductor analyzer system) for the sensing test. We thus demonstrate a simplified approach to stabilized OFET circuits that could be used in printable, flexible, or wearable sensors.

Low-Voltage Organic Nonvolatile Memory Transistors with Water-Soluble Polymers Containing Thermally Induced Radical Dipoles

A water-soluble acidic polymer, poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPSA), was applied as a gate-insulating layer for organic field-effect transistors (OFETs). Before depositing the poly(3-hexylthiophene) (P3HT) channel layers, the PAMPSA layers were subjected to thermal treatment at various temperatures from 140 to 230 °C. The OFET performance was greatly enhanced by thermal treatment between 140 and 170 °C, whereas it became very poor at higher temperatures (200-230 °C). In particular, the transfer curves showed pronounced hysteresis phenomena at 170 °C. Various measurements including thermogravimetric analysis and X-ray photoelectron spectroscopy disclosed that the PAMPSA chains underwent thermal degradation from ca. 160 °C and could generate carbon radicals leading to the formation of dipoles with the nitrogen lone pair electrons. The carbon-nitrogen dipoles delivered hysteresis phenomena to the OFETs with the PAMPSA layers treated at 170 °C, which exhibited excellent memory retention characteristics up to 10 000 cycles even at -1 V. Hence, it is expected that the thermally treated PAMPSA layers can be used as one of the viable gate-insulating memory materials for low-voltage transistor-type organic memory devices (TOMDs).

Mimicking Sensory Adaptation with Dielectric Engineered Organic Transistors

Mimicking sensory adaptation with transistors is essential for developing next-generation smart circuits. A key challenge is how to obtain controllable and reversible short-term signal decay while simultaneously maintaining long-term electrical stability. By introducing a buried dynamic-trapping interface within the dielectric layer, an organic adaptive transistor (OAT) with sensory adaptation functionality is developed. The device induces self-adaptive interfacial trapping to enable volatile shielding of the gating field, thereby leading to rapid and temporary carrier concentration decay in the conductive channel without diminishing the mobility upon a fixed voltage bias. More importantly, the device exhibits a fine-tuned decay constant ranging from 50 ms to 5 s, accurately matching the adaptation timescales in bio-systems. This not only suggests promising applications of OATs in flexible artificial intelligent elements, but also provides a strategy for engineering organic devices toward novel biomimetic functions.

Recent Efforts in Understanding and Improving the Nonideal Behaviors of Organic Field-Effect Transistors

Over the past three decades, the mobility of organic field-effect transistors (OFETs) has been improved from 10-5 up to over 10 cm2 V-1 s-1, which reaches or has already satisfied the requirements of demanding applications. However, pronounced nonideal behaviors in current-voltage characteristics are commonly observed, which indicates that the reported mobilities may not truly reflect the device properties. Herein, a comprehensive understanding of the origins of several observed nonidealities (downward, upward, double-slope, superlinear, and humped transfer characteristics) is summarized, and how to extract comparatively reliable mobilities from nonideal behaviors in OFETs is discussed. Combining an overview of the ideal and state-of-the-art OFETs, considerable possible approaches are also provided for future OFETs.

Polymer-based flexible NOx sensors with ppb-level detection at room temperature using breath-figure molding

A strategically designed polymer semiconductor thin film morphology with both high responsivity to the specific gas analyte and high signal transport efficiency is reported to realize high-performance flexible NOx gas sensors. Breath-figure (BF) molding of polymer semiconductors enables a finely defined degree of nano-porosity in polymer films with high reproducibility while maintaining high charge carrier mobility characteristics of organic field effect transistors (OFETs). The optimized BF-OFET with a donor-acceptor copolymer exhibits a maximum responsivity of over 104%, sensitivity of 774% ppm-1, and limit of detection (LOD) of 110 ppb against NO at room temperature. When tested across at NO concentrations of 0.2-10 ppm, the BF-OFET gas sensor exhibits a response time of 100-300 s, which is suitable for safety purposes in practical applications. Furthermore, BF-OFETs show a high reproducibility as confirmed by statistical analysis on 64 independently fabricated devices. The selectivity of NOx analytes is tested by comparing the sensing ability of BF-OFETs with those of other reducing gases and volatile organic compounds; the BF-OFET gas sensor platform monitors specific gas analytes based on their polarity and magnitude of sensitivity. Finally, flexible BF-OFETs conjugated with plastic substrates are demonstrated and they exhibit a sensitivity of 500% ppm-1 and a LOD of 215 ppb, with a responsivity degradation of only 14.2% after 10 000 bending cycles at 1% strain.

High-Performance Colorimetric Room-Temperature NO2 Sensing Using Spin-Coated Graphene/Polyelectrolyte Reflecting Film

Nitrogen dioxide (NO₂) is a colorless, flammable, and dangerous gas even at very low concentrations. To date, quantitative analysis of NO₂ concentrations have been made using conventional techniques (e.g., electrochemical method). In light of the energy and time consumption involved in such applications, efforts have been made to develop new detection methods that are more sensitive and sustainable. At this point, structural color-based sensing shows great advantages because of its sensitive, visualized, and reproducible response. In this study, graphene oxide/polystyrene sulfonate (GO/PSS) optical films were designed and prepared to evaluate the potential usage for the effective detection of NO₂. The uniform GO/PSS thin films were fabricated by the spin-coating-assisted layer-by-layer assembly method. The resulting colorful films exhibited ultrafast response, obvious optical shifts, and good reversibility within the visible range toward NO₂. The concentration-dependent NO₂ sensing characteristics and selectivity were investigated as well. The dynamic study showed that the absorption/desorption time was 200/200 ms and the detection limit was 1.0 ppm at room temperature. The sensing mechanism was investigated and verified by computer simulations. Such ultrasensitive and colorimetric properties of GO/PSS films may enable many potential applications such as disposable sensors for health and environmental monitoring.

Enabling Multifunctional Organic Transistors with Fine-Tuned Charge Transport

Organic field-effect transistors (OFETs) are promising candidates for many electronic applications not only because of the intrinsic features of organic semiconductors in mechanical flexibility and solution processability but also owing to their multifunctionalities promised by combined signal switching and transduction properties. In contrast to rapid developments of high performance devices, the construction of multifunctional OFETs remains challenging. A key issue is fine-tuning the charge transport by modulating electric fields that are coupled with various external stimuli. Given that the charge transport is determined by complicated factors involving material and device engineering, the development of effective strategies to manipulate charge transport is highly desired toward state-of-the-art multifunctional OFETs. In this Account, we present our recent progress on device-engineered OFETs for sensing applications and thermoelectric studies of organic semiconductors. The interactions between organic semiconductors and the target analyte determine the performance of chemical sensors based on OFETs. We introduced gas receptors and in situ tailored molecular antenna on the surface of ultrathin active layers. The engineered interfaces enable direct and specific semiconductor-analyte interactions, as demonstrated in developed chemical sensors and biosensors with prominent sensitivity and good selectivity. In comparison with chemical stimuli, many physical stimuli such as pressure typically possess a limit effect on the charge transport properties of organic semiconductors. By utilizing the suspended-gate geometry, the carrier concentration in a conductive channel can be controlled quantitatively by the pressure dominated changes in the capacitance of an air dielectric layer, allowing for ultrasensitive pressure detection in a unique manner. More importantly, the transduced current can be further processed by a synaptic OFET, in which the proton/electron coupling interfaces contribute to the dynamic modulation of carrier concentration, thus mimicking biological synapses. The integrated pressure sensor and synaptic OFETs, namely, the dual-organic-transistor-based tactile-perception element, has exhibited promising applications in artificial intelligence elements. Aiming at revealing thermoelectric (TE) properties of organic semiconductors, we also investigated field-modulated TE performance of several high-mobility semiconductors by varying the driving electric field to the temperature gradient. This has been confirmed to offer a strategy to accelerate the search for promising TE materials from well-developed organic semiconductors. By tuning the charge transport process in the device, the functional modulation of OFETs has experienced significant progress in the preceding years. The exploration of new ways to create OFETs with more fascinating functionalities is still full of opportunities to obtain greater benefit from organic transistors.

Gas Sensors Based on Nano/Microstructured Organic Field-Effect Transistors

Benefiting from the advantages of organic field-effect transistors (OFETs), including synthetic versatility of organic molecular design and environmental sensitivity, gas sensors based on OFETs have drawn much attention in recent years. Potential applications focus on the detection of specific gas species such as explosive, toxic gases, or volatile organic compounds (VOCs) that play vital roles in environmental monitoring, industrial manufacturing, smart health care, food security, and national defense. To achieve high sensitivity, selectivity, and ambient stability with rapid response and recovery speed, the regulation and adjustment of the nano/microstructure of the organic semiconductor (OSC) layer has proven to be an effective strategy. Here, the progress of OFET gas sensors with nano/microstructure is selectively presented. Devices based on OSC films one dimensional (1D) single crystal nanowires, nanorods, and nanofibers are introduced. Then, devices based on two dimensional (2D) and ultrathin OSC films, fabricated by methods such as thermal evaporation, dip-coating, spin-coating, and solution-shearing methods are presented, followed by an introduction of porous OFET sensors. Additionally, the applications of nanostructured receptors in OFET sensors are given. Finally, an outlook in view of the current research state is presented and eight further challenges for gas sensors based on OFETs are suggested.

Morphology Driven by Molecular Structure of Thiazole-Based Polymers for Use in Field-Effect Transistors and Solar Cells

The effects of the molecular structure of thiazole-based polymers on the active layer morphologies and performances of electronic and photovoltaic devices were studied. Thus, thiazole-based conjugated polymers with a novel thiazole-vinylene-thiazole (TzVTz) structure were designed and synthesized. The TzVTz structure was introduced to extend the π conjugation and coplanarity of the polymer chains. By combining alkylthienyl-substituted benzo[1,2-b:4,5-b']dithiophene (BDT) or dithieno[2,3-d:2',3'-d']benzo[1,2-b:4,5-b']dithiophene (DTBDT) electron-donating units and a TzVTz electron-accepting unit, enhanced intermolecular interactions and charge transport were obtained in the novel polymers BDT-TzVTz and DTBDT-TzVTz. With a view to using the polymers in transistor and photovoltaic applications, the molecular self-assembly in and their nanoscale morphologies of the active layers were controlled by thermal annealing to enhance the molecular packing and by introducing a diphenyl ether solvent additive to improve the miscibility between polymer donors and [6,6]phenyl-C71-butyric acid methyl ester (PC₇₁ BM) acceptors, respectively. The morphological characterization of the photoactive layers showed that a higher degree of π-electron delocalization and more favorable molecular packing in DTBDT-TzVTz compared with in BDT-TzVTz leads to distinctly higher performances in transistor and photovoltaic devices. The superior performance of a photovoltaic device incorporating DTBDT-TzVTz was achieved through the superior miscibility of DTBDT-TzVTz with PC₇₁ BM and the improved crystallinity of DTBDT-TzVTz in the nanofibrillar structure.

Polypyrrole nanoparticles-based soft actuator for artificial muscle applications

Currently, a straightforward fabrication technique for the development of soft actuators to explore their potential in robotic applications using environmentally compatible raw materials represents an important challenge.

Organic Transistor-Based Chemical Sensors for Wearable Bioelectronics

Bioelectronics for healthcare that monitor the health information on users in real time have stepped into the limelight as crucial electronic devices for the future due to the increased demand for "point-of-care" testing, which is defined as medical diagnostic testing at the time and place of patient care. In contrast to traditional diagnostic testing, which is generally conducted at medical institutions with diagnostic instruments and requires a long time for specimen analysis, point-of-care testing can be accomplished personally at the bedside, and health information on users can be monitored in real time. Advances in materials science and device technology have enabled next-generation electronics, including flexible, stretchable, and biocompatible electronic devices, bringing the commercialization of personalized healthcare devices increasingly within reach, e.g., wearable bioelectronics attached to the body that monitor the health information on users in real time. Additionally, the monitoring of harmful factors in the environment surrounding the user, such as air pollutants, chemicals, and ultraviolet light, is also important for health maintenance because such factors can have short- and long-term detrimental effects on the human body. The precise detection of chemical species from both the human body and the surrounding environment is crucial for personal health care because of the abundant information that such factors can provide when determining a person's health condition. In this respect, sensor applications based on an organic-transistor platform have various advantages, including signal amplification, molecular design capability, low cost, and mechanical robustness (e.g., flexibility and stretchability). This Account covers recent progress in organic transistor-based chemical sensors that detect various chemical species in the human body or the surrounding environment, which will be the core elements of wearable electronic devices. There has been considerable effort to develop high-performance chemical sensors based on organic-transistor platforms through material design and device engineering. Various experimental approaches have been adopted to develop chemical sensors with high sensitivity, selectivity, and stability, including the synthesis of new materials, structural engineering, surface functionalization, and device engineering. In this Account, we first provide a brief introduction to the operating principles of transistor-based chemical sensors. Then we summarize the progress in the fabrication of transistor-based chemical sensors that detect chemical species from the human body (e.g., molecules in sweat, saliva, urine, tears, etc.). We then highlight examples of chemical sensors for detecting harmful chemicals in the environment surrounding the user (e.g., nitrogen oxides, sulfur dioxide, volatile organic compounds, liquid-phase organic solvents, and heavy metal ions). Finally, we conclude this Account with a perspective on the wearable bioelectronics, especially focusing on organic electronic materials and devices.

Improved Room Temperature NO2 Sensing Performance of Organic Field-Effect Transistor by Directly Blending a Hole-Transporting/Electron-Blocking Polymer into the Active Layer

Over the past decades, organic field-effect transistor (OFET) gas sensors have maintained a rapid development. However, the majority of OFET gas sensors show insufficient detection capability towards oxidizing gases such as nitrogen oxide, compared with the inorganic counterpart. In this paper, a new strategy of OFET nitrogen dioxide (NO₂) gas sensor, consisting of poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly(9-vinylcarbazole) (PVK) blend, is reported. Depending on the gate voltage, this sensor can operate in two modes at room temperature. Of the two modes exposed to NO₂ for 5 min, when the gate voltage is 0 V, the highest NO₂ responsivity of this OFET is >20 000% for 30 ppm (≈700% for 600 ppb) with the 1:1 P3HT/PVK blend, it is ≈40 times greater than that with the pure P3HT. The limit of detection of ≈300 ppb is achieved, and there is still room for improvement. While in the condition of -40 V, the response increases by 15 times than that with the pure P3HT. This is the first attempt to improve the OFET sensing performance using PVK, which usually functions as a hole-transport layer in the light- emitting device. The enhancement of sensing performance is attributed to the aggregation-controlling and hole-transporting/electron-blocking effect of PVK. This work demonstrates that the hole-transport material can be applied to improve the NO₂ sensor with simple solution process, which expands the material choice of OFET gas sensors.

Organic 2D Optoelectronic Crystals: Charge Transport, Emerging Functions, and Their Design Perspective

2D organic semiconductor crystals are emerging as a fascinating platform with regard to their applications in organic field-effect transistors (OFETs), attributed to their enhanced charge transport efficiency and their new optoelectronic functions, based on their unique morphological features. Advances in material processing techniques have not only enabled easy fabrication of few-monolayered 2D nanostructures but also facilitated exploration of the interesting properties induced by characteristic 2D morphologies. However, to date, only a limited number of representative organic semiconductors have been utilized in organic 2D optoelectronics. Therefore, in order to further spur this research, an intuitive crystal engineering principle for realizing organic 2D crystals is required. In this regard, here, not only the important implications of applying 2D structures to OFET devices are discussed but also a crystal engineering protocol is provided that first predicts molecular arrangements depending on the molecular factors, which is followed by realizing 2D supramolecular synthon networks for different molecular packing motifs. It is expected that 2D organic semiconductor crystals developed by this approach will pave a promising way toward next-generation organic 2D optoelectronics.

Large-Scale Fabrication of High-Performance Ionic Polymer-Metal Composite Flexible Sensors by in Situ Plasma Etching and Magnetron Sputtering

Flexible electronics has received widespread concern and research. As a most-fundamental step and component, polymer metallization to introduce conductive electrode is crucial in successful establishment and application of flexible and stretchable electronic system. Ionic polymer-metal composite (IPMC) is such an attractive flexible mechanical sensor with significant advantages of passive and space-discriminative capability. Generally, the IPMC sensor is fabricated by the electroless plating method to form structure of ionic polymer membrane sandwiched with two metallic electrodes. In order to obtain high-quality interface adhesion and conductivity between polymer and metal, the plating process for IPMC sensor is usually time-consuming and uncontrollable and has low reproducibility, which make it difficult to use in practice and in large-scale. Here, a manufacturable method and equipment with short processing time and high reproducibility for fabricating IPMC sensors by in situ plasma etching and magnetron sputtering depositing on flexible substrates is developed. First, the new method shortens the fabrication period greatly from 2 weeks to 2 h to obtain IPMC sensors with sizes up to 9 cm × 9 cm or arrays in various patterns. Second, the integrated operation ensures all sample batch stability and performance repeatability. In a typical IPMC sensor, nearly 200 mV potential signal due to ion redistribution induced by bending strain under 1.6% can be produced without any external power supply, which is much higher than the traditional electroless plating sensor. This work verified that the in situ plasma etching and magnetron sputtering deposition could significantly increase the interface and surface conductivity of the flexible devices, resulting in the present high sensitivity as well as linear correlation with strain of the IPMC sensor. Therefore, this introduced method is scalable and believed to be used to metalize flexible substrates with different metals, providing a new route to large-scale fabrication of flexible devices for potential wearable applications in real-time monitoring human motion and human-machine interaction.

Rise of Conjugated Poly-ynes and Poly(Metalla-ynes): From Design Through Synthesis to Structure-Property Relationships and Applications

Conjugated poly-ynes and poly(metalla-ynes) constitute an important class of new materials with potential application in various domains of science. The key factors responsible for the diverse usage of these materials is their intriguing and tunable chemical and photophysical properties. This review highlights fascinating advances made in the field of conjugated organic poly-ynes and poly(metalla-ynes) incorporating group 4-11 metals. This includes several important aspects of conjugated poly-ynes viz. synthetic protocols, bonding, electronic structure, nature of luminescence, structure-property relationships, diverse applications, and concluding remarks. Furthermore, we delineated the future directions and challenges in this particular area of research.

Ultrasensitive detection of hazardous reactive oxygen species using flexible organic transistors with polyphenol-embedded conjugated polymer sensing layers

Here we report that superoxide, one of the hazardous reactive oxygen species (ROS), can be quickly detected by flexible organic field-effect transistors (OFETs) with the polyphenol-embedded conjugated polymer micro-channels. Rutin, one of the abundant polyphenols found in a variety of plants, was employed as a sensing molecule and embedded in the poly(3-hexylthiophene) (P3HT) matrix. The rutin-embedded P3HT layers showed randomly distributed micro-domains, which became bigger as the rutin content increased. The best transistor performance was achieved at the rutin content of 10 wt%, while the OFETs exhibited proper and controllable transistor performances even in the phosphate buffer solutions. The sensing test revealed that the present OFET sensors could stably detect superoxide using very small amount (<10 μl) of samples at extremely low concentrations (500 pM), while they exhibited outstanding stability and durability upon repeated detection and storage-reuse tests. Finally, the present flexible OFET sensors could deliver confident sensing results for the detection of superoxide generated from the mouse RAW264.7 macrophages.

Helical Nanofibrils of Block Copolymer for High-Performance Ammonia Sensors

Conjugated polymers with a helical structure have been in rapid development in recent years because of their potential applications in chemical and biological sensors. We demonstrate the fabrication and characterization of helical nanofibrils of block copolymer poly(4-iso-cyano-benzoic acid 5-(2-dimethylamino-ethoxy)-2-nitro-benzylester)- b-poly(3-hexylthiophene) (PPI(-DMAENBA)- b-P3HT) via a transfer-etching method. The density and lateral length of nanofibrils can be facilely controlled by regulating the process conditions, which, in turn, directly determine the electronic property. Organic field effect transistors based on helical nanofibrils were successfully fabricated with the highest mobility of 9.1 × 10^-3 cm²/(V s)^-1, an on/off ratio of 3.4 × 10⁵, and high bias stability. The helical nanofibrils were proved to be beneficial for obtaining a highly sensitive and selective chemical sensor. And, the transistor based on helical nanofibrils exhibits a relative response of 28.6% to 100 ppb ammonia, which is even much higher than the responses to 1 ppm ammonia for homo poly(3-hexylthiophene) nanofibrils (7%) and block copolymer nanofibrils without helical structure (0.9%). The combination of helical structure with nanofibrils may provide a new strategy to fabricate high-performance chemical sensors suitable for use in environmental monitoring, industrial and agricultural production, health care, and foodsafety.

Charge-Trapping-Induced Non-Ideal Behaviors in Organic Field-Effect Transistors

Organic field-effect transistors (OFETs) with impressively high hole mobilities over 10 cm² V^-1 s^-1 and electron mobilities over 1 cm² V^-1 s^-1 have been reported in the past few years. However, significant non-ideal electrical characteristics, e.g., voltage-dependent mobilities, have been widely observed in both small-molecule and polymer systems. This issue makes the accurate evaluation of the electrical performance impossible and also limits the practical applications of OFETs. Here, a semiconductor-unrelated, charge-trapping-induced non-ideality in OFETs is reported, and a revised model for the non-ideal transfer characteristics is provided. The trapping process can be directly observed using scanning Kelvin probe microscopy. It is found that such trapping-induced non-ideality exists in OFETs with different types of charge carriers (p-type or n-type), different types of dielectric materials (inorganic and organic) that contain different functional groups (OH, NH₂ , COOH, etc.). As fas as it is known, this is the first report for the non-ideal transport behaviors in OFETs caused by semiconductor-independent charge trapping. This work reveals the significant role of dielectric charge trapping in the non-ideal transistor characteristics and also provides guidelines for device engineering toward ideal OFETs.

Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors

Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications.

Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

Nitrogen dioxide (NO₂) sensors based on organic thin-film transistors (OTFTs) were fabricated by conventional annealing (horizontal) and vertical annealing processes of organic semiconductor (OSC) films. The NO₂ responsivity of OTFTs to 15 ppm of NO₂ is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO₂, while showing a preferential response to NO₂ compared with SO₂, NH₃, CO, and H₂S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) films were characterized by atomic force microscopy (AFM) in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO₂ gas sensing performance.

An Ultrasensitive Organic Semiconductor NO2 Sensor Based on Crystalline TIPS-Pentacene Films

Organic semiconductor gas sensor is one of the promising candidates of room temperature operated gas sensors with high selectivity. However, for a long time the performance of organic semiconductor sensors, especially for the detection of oxidizing gases, is far behind that of the traditional metal oxide gas sensors. Although intensive attempts have been made to address the problem, the performance and the understanding of the sensing mechanism are still far from sufficient. Herein, an ultrasensitive organic semiconductor NO₂ sensor based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-petacene) is reported. The device achieves a sensitivity over 1000%/ppm and fast response/recovery, together with a low limit of detection (LOD) of 20 ppb, all of which reach the level of metal oxide sensors. After a comprehensive analysis on the morphology and electrical properties of the organic films, it is revealed that the ultrahigh performance is largely related to the film charge transport ability, which was less concerned in the studies previously. And the combination of efficient charge transport and low original charge carrier concentration is demonstrated to be an effective access to obtain high performance organic semiconductor gas sensors.

An Overview of the Development of Flexible Sensors

Flexible sensors that efficiently detect various stimuli relevant to specific environmental or biological species have been extensively studied due to their great potential for the Internet of Things and wearable electronics applications. The application of flexible and stretchable electronics to device-engineering technologies has enabled the fabrication of slender, lightweight, stretchable, and foldable sensors. Here, recent studies on flexible sensors for biological analytes, ions, light, and pH are outlined. In addition, contemporary studies on device structure, materials, and fabrication methods for flexible sensors are discussed, and a market overview is provided. The conclusion presents challenges and perspectives in this field.

Visualizing Local Morphology and Conductivity Switching in Interface-Assembled Nanoporous C60 Thin Films

Carbon materials promise a revolution in optoelectronics, medical applications, and sensing provided that their morphology can be controlled down to the nanometer scale. Nanoporous materials are particularly appealing as they offer a drastically enlarged interfacial area compared to the corresponding planar materials. Entire fields such as organic solar cells, catalysis, or sensing may profit from an enlarged interface and facilitated molecular interaction between a carbon material and the environment. Nanoporous fullerene thin films obtained by the deposition of suspended nanoclusters of fullerene were already reported but suffered from the limitation of the size of these particles to over 100 nm. We study here a complementary method based on interfacial self-assembly forcing C₆₀ clusters to spontaneously form 2D percolating monolayers with most morphological features in the 5-20 nm range. Analysis of these films by means of electron microscopy and scanning probe microscopy proved their morphology to be a nanocomposite of crystalline beads embedded in an amorphous matrix of fullerenes. When contacted between two gold electrodes, these films show an intrinsic conductivity switching behavior. Their electrical conductivity could be reversibly switched on by applying a threshold electrical current and switched off by exposure to oxygen. Interestingly, the on-state exhibits an astonishing conductivity of over 10^-3 S/m. Kelvin probe force microscopy (KFM) was used to observe local changes in the distribution of electrical potential upon switching, on the relevant length scale of a few nanometers.

UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

A new type of nitrogen dioxide (NO₂ ) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO₂ sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO₂ ] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO₂ ] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO₂ and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

Precise Patterning of Organic Single Crystals via Capillary-Assisted Alternating-Electric Field

Owing to the extraordinary properties, organic micro/nanocrystals are important building blocks for future low-cost and high-performance organic electronic devices. However, integrated device application of the organic micro/nanocrystals is hampered by the difficulty in high-throughput, high-precision patterning of the micro/nanocrystals. In this study, the authors demonstrate, for the first time, a facile capillary-assisted alternating-electric field method for the large-scale assembling and patterning of both 0D and 1D organic crystals. These crystals can be precisely patterned at the photolithography defined holes/channels at the substrate with the yield up to 95% in 1 mm² . The mechanism of assembly kinetics is systematically studied by the electric field distribution simulation and experimental investigations. By using the strategy, various organic micro/nanocrystal patterns are obtained by simply altering the geometries of the photoresist patterns on substrates. Moreover, ultraviolet photodetectors based on the patterned Alq3 micro/nanocrystals exhibit visible-blind photoresponse with high sensitivity as well as excellent stability and reproducibility. This work paves the way toward high-integration, high-performance organic electronic, and optoelectronic devices from the organic micro/nanocrystals.

Porous Ionic Membrane Based Flexible Humidity Sensor and its Multifunctional Applications

A highly flexible porous ionic membrane (PIM) is fabricated from a polyvinyl alcohol/KOH polymer gel electrolyte, showing well-defined 3D porous structure. The conductance of the PIM changes more than 70 times as the relative humidity (RH) increases from 10.89% to 81.75% with fast and reversible response at room temperature. In addition, the PIM-based sensor is insensitive to temperature (0-95 °C) and pressure (0-6.8 kPa) change, which indicates that it can be used as highly selective flexible humidity sensor. A noncontact switch system containing PIM-based sensor is assembled, and results show that the switch responds favorably to RH change caused by an approaching finger. Moreover, an attachable smart label using PIM-based sensor is explored to measure the water contents of human skin, which shows a great linear relationship between the sensitivity of the sensor and the facial water contents measured by a commercial reference device.

Interface Energy Alignment of Atomic-Layer-Deposited VOx on Pentacene: an in Situ Photoelectron Spectroscopy Investigation

Ultrathin atomic-layer-deposited (ALD) vanadium oxide (VO_x) interlayer has recently been demonstrated for remarkably reducing the contact resistance in organic electronic devices (Adv. Funct. Mater. 2016, 26, 4456). Herein, we present an in situ photoelectron spectroscopy investigation (including X-ray and ultraviolet photoelectron spectroscopies) of ALD VO_x grown on pentacene to understand the role of the ALD VO_x interlayer for the improved contact resistance. The in situ photoelectron spectroscopy characterizations allow us to monitor the ALD growth process of VO_x and trace the evolutions of the work function, pentacene HOMO level, and VO_x defect states during the growth. The initial VO_x growth is found to be partially delayed on pentacene in the first ∼20 ALD cycles. The underneath pentacene layer is largely intact after ALD. The ALD VO_x is found to contain a high density of defect states starting from 0.67 eV below the Fermi level, and the energy level of these defect states is in excellent alignment with the HOMO level of pentacene, which therefore allows these VO_x defect states to provide an efficient hole-injection pathway at the contact interface.

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Flexible and printable paper-based strain sensors for wearable and large-area green electronics

Paper-based (PB) green electronics is an emerging and potentially game-changing technology due to ease of recycling/disposal, the economics of manufacture and the applicability to flexible electronics. Herein, new-type printable PB strain sensors (PPBSSs) from graphite glue (graphite powder and methylcellulose) have been fabricated. The graphite glue is exposed to thermal annealing to produce surface micro/nano cracks, which are very sensitive to compressive or tensile strain. The devices exhibit a gauge factor of 804.9, response time of 19.6 ms and strain resolution of 0.038%, all performance indicators attaining and even surpassing most of the recently reported strain sensors. Due to the distinctive sensing properties, flexibility and robustness, the PPBSSs are suitable for monitoring of diverse conditions such as structural strain, vibrational motion, human muscular movements and visual control.