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Hwang J, Park J, Choi J, Lee T, Lee HC, Cho K. Self-Assembly of Organic Semiconductors on Strained Graphene under Strain-Induced Pseudo-Electric Fields. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400598. [PMID: 38477451 PMCID: PMC11109627 DOI: 10.1002/advs.202400598] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/22/2024] [Indexed: 03/14/2024]
Abstract
Graphene is used as a growth template for van der Waals epitaxy of organic semiconductor (OSC) thin films. During the synthesis and transfer of chemical-vapor-deposited graphene on a target substrate, local inhomogeneities in the graphene-in particular, a nonuniform strain field in the graphene template-can easily form, causing poor morphology and crystallinity of the OSC thin films. Moreover, a strain field in graphene introduces a pseudo-electric field in the graphene. Here, the study investigates how the strain and strain-induced pseudo-electric field of a graphene template affect the self-assembly of π-conjugated organic molecules on it. Periodically strained graphene templates are fabricated by transferring graphene onto an array of nanospheres and then analyzed the growth and nucleation behavior of C60 thin films on the strained graphene templates. Both experiments and a numerical simulation demonstrated that strained graphene reduced the desorption energy between the graphene and the C60 molecules and thereby suppressed both nucleation and growth of the C60. A mechanism is proposed in which the strain-induced pseudo-electric field in graphene modulates the binding energy of organic molecules on the graphene.
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Affiliation(s)
- Jinhyun Hwang
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
| | - Jisang Park
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
| | - Jinhyeok Choi
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
| | - Taeksang Lee
- Department of Mechanical EngineeringMyongji UniversityYongin17058Republic of Korea
| | - Hyo Chan Lee
- Department of Chemical EngineeringMyongji UniversityYongin17058Republic of Korea
| | - Kilwon Cho
- Department of Chemical EngineeringPohang University of Science and TechnologyPohang37673Republic of Korea
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2
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Park T, Kim M, Lee EK, Hur J, Yoo H. Overcoming Downscaling Limitations in Organic Semiconductors: Strategies and Progress. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306468. [PMID: 37857588 DOI: 10.1002/smll.202306468] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2023] [Revised: 09/30/2023] [Indexed: 10/21/2023]
Abstract
Organic semiconductors have great potential to revolutionize electronics by enabling flexible and eco-friendly manufacturing of electronic devices on plastic film substrates. Recent research and development led to the creation of printed displays, radio-frequency identification tags, smart labels, and sensors based on organic electronics. Over the last 3 decades, significant progress has been made in realizing electronic devices with unprecedented features, such as wearable sensors, disposable electronics, and foldable displays, through the exploitation of desirable characteristics in organic electronics. Neverthless, the down-scalability of organic electronic devices remains a crucial consideration. To address this, efforts are extensively explored. It is of utmost importance to further develop these alternative patterning methods to overcome the downscaling challenge. This review comprehensively discusses the efforts and strategies aimed at overcoming the limitations of downscaling in organic semiconductors, with a particular focus on four main areas: 1) lithography-compatible organic semiconductors, 2) fine patterning of printing methods, 3) organic material deposition on pre-fabricated devices, and 4) vertical-channeled organic electronics. By discussing these areas, the full potential of organic semiconductors can be unlocked, and the field of flexible and sustainable electronics can be advanced.
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Affiliation(s)
- Taehyun Park
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Minseo Kim
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Eun Kwang Lee
- Department of Chemical Engineering, Pukyong National University, Busan, 48513, Republic of Korea
| | - Jaehyun Hur
- Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam-si, Gyeonggi-do, 13120, Republic of Korea
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3
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Zhao W, Fu GE, Yang H, Zhang T. Two-Dimensional Conjugated Polymers: a New Choice For Organic Thin-Film Transistors. Chem Asian J 2023:e202301076. [PMID: 38151907 DOI: 10.1002/asia.202301076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 12/19/2023] [Accepted: 12/25/2023] [Indexed: 12/29/2023]
Abstract
Organic thin-film transistors (OTFTs) as a vital component among transistors have shown great potential in smart sensing, flexible displays, and bionics due to their flexibility, biocompatibility and customizable chemical structures. Even though linear conjugated polymer semiconductors are common for constructing channel materials of OTFTs, advanced materials with high charge carrier mobility, tunable band structure, robust stability, and clear structure-property relationship are indispensable for propelling the evolution of OTFTs. Two-dimensional conjugated polymers (2DCPs), featured with conjugated lattice, tailorable skeletons, and functional porous structures, match aforementioned criteria closely. In this review, we firstly introduce the synthesis of 2DCP thin films, focusing on their characteristics compatible with the channels of OTFTs. Subsequently, the physics and operating mechanisms of OTFTs and the applications of 2DCPs in OTFTs are summarized in detail. Finally, the outlook and perspective in the field of OTFTs using 2DCPs are provided as well.
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Affiliation(s)
- Wenkai Zhao
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Key Laboratory of Marine Materials and Related Technologies, 315201, Ningbo, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Guang-En Fu
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Key Laboratory of Marine Materials and Related Technologies, 315201, Ningbo, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Haoyong Yang
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Key Laboratory of Marine Materials and Related Technologies, 315201, Ningbo, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Tao Zhang
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Key Laboratory of Marine Materials and Related Technologies, 315201, Ningbo, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
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4
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Shukla G, Bisht RS, Kumar P. Predicting the miniaturization limit of vertical organic field effect transistor (VOFET) with perforated graphene as a source electrode. NANOTECHNOLOGY 2023; 35:035201. [PMID: 37820593 DOI: 10.1088/1361-6528/ad0242] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/02/2023] [Accepted: 10/11/2023] [Indexed: 10/13/2023]
Abstract
Vertical organic field effect transistors (VOFETs) are of paramount importance due to their fast switching speed, low power consumption, and higher density on a chip compared to lateral OFETs. The low charge carrier mobility in organic semiconductors and longer channel lengths in lateral OFETs lead to higher operating voltages. The channel length in VOFETs can be less than 100 nm which reduces the size of the channel and hence the operating voltages. Another important factor in the operation of VOFETs is the thickness and width of the source electrode. The channel length, source electrode thickness and width sets the miniaturization limit of the VOFETs. The graphene monolayer can be exploited as a source electrode due to its thinness, high carrier mobility, and metallic behaviors. However, for better gate modulation, perforations in the source material are desired. Here, we simulate the VOFET having perforated graphene monolayer as a source electrode and n-type organic semiconductor N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) as an active channel material, while aluminum as a drain electrode to predict the best-miniaturized device. The miniaturization limit of such a VOFET has a limit to the gate opening/perforation in which the minimum source width is 10 nm, as in the sub 10 nm range graphene starts behaving like a semiconductor. The subthreshold swing, deduced from the drain current (JD) versus gate voltage (VG) graph, advocates the limit of the organic semiconductor height/channel length to 50 nm, while 50 nm for the gate.
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Affiliation(s)
- Gaurav Shukla
- Department of Physics, Indian Institute of Technology Bombay, Maharashtra, 400076, India
| | - Ramesh Singh Bisht
- Department of Physics, Indian Institute of Technology Bombay, Maharashtra, 400076, India
| | - Pramod Kumar
- Department of Physics, Indian Institute of Technology Bombay, Maharashtra, 400076, India
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Zhang D, Du J, Zhang W, Tong B, Sun Y, Zhao TY, Ma LP, Sun DM, Cheng HM, Ren W. Carrier Transport Regulation of Pixel Graphene Transparent Electrodes for Active-Matrix Organic Light-Emitting Diode Display. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302920. [PMID: 37267934 DOI: 10.1002/smll.202302920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2023] [Revised: 05/14/2023] [Indexed: 06/04/2023]
Abstract
Integrating a graphene transparent electrode (TE) matrix with driving circuits is essential for the practical use of graphene in optoelectronics such as active-matrix organic light-emitting diode (OLED) display, however it is disabled by the transport of carriers between graphene pixels after deposition of a semiconductor functional layer caused by the atomic thickness of graphene. Here, the carrier transport regulation of a graphene TE matrix by using an insulating polyethyleneimine (PEIE) layer is reported. The PEIE forms an ultrathin uniform film (≤10 nm) to fill the gap of the graphene matrix, blocking horizontal electron transport between graphene pixels. Meanwhile, it can reduce the work function of graphene, improving the vertical electron injection through electron tunneling. This enables the fabrication of inverted OLED pixels with record high current and power efficiencies of 90.7 cd A-1 and 89.1 lm W-1 , respectively. By integrating these inverted OLED pixels with a carbon nanotube-based thin-film transistor (CNT-TFT)-driven circuit, an inch-size flexible active-matrix OLED display is demonstrated, in which all OLED pixels are independently controlled by CNT-TFTs. This research paves a way for the application of graphene-like atomically thin TE pixels in flexible optoelectronics such as displays, smart wearables, and free-form surface lighting.
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Affiliation(s)
- Dingdong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Jinhong Du
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Weimin Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Bo Tong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Yun Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Tian-Yang Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Lai-Peng Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Dong-Ming Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- Faculty of Materials Science and Energy Engineering, Shenzhen Institute of Advanced Technology, Chinese Academy of Science, Shenzhen, 518055, P. R. China
- Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang, 110016, P. R. China
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6
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Kim S, Jo SB, Cho JH. Graphene barristors for de novo optoelectronics. Chem Commun (Camb) 2023; 59:974-988. [PMID: 36607612 DOI: 10.1039/d2cc05886c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Abstract
Graphene-based vertical Schottky-barrier transistors (SBTs), renowned as graphene barristors, have emerged as a feasible candidate to fundamentally expand the horizon of conventional transistor technology. The remote tunability of graphene's electronic properties could endorse multi-stimuli responsive functionalities for a broad range of electronic and optoelectronic applications of transistors, with the capability of incorporating nanochannel architecture with dramatically reduced footprints from the vertical integrations. In this Feature Article, we provide a comprehensive overview of the progress made in the field of SBTs over the last 10 years, starting from the operating principles, materials evolution, and processing developments. Depending on the types of stimuli such as electrical, optical, and mechanical stresses, various fields of applications from conventional digital logic circuits to sensory technologies are highlighted. Finally, more advanced applications toward beyond-Moore electronics are discussed, featuring recent advancements in neuromorphic devices based on SBTs.
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Affiliation(s)
- Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.,Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, PA 16802, USA
| | - Sae Byeok Jo
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea. .,SKKU Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea.
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7
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Zhang Q, Li E, Wang Y, Gao C, Wang C, Li L, Geng D, Chen H, Chen W, Hu W. Ultralow-Power Vertical Transistors for Multilevel Decoding Modes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208600. [PMID: 36341511 DOI: 10.1002/adma.202208600] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Revised: 10/21/2022] [Indexed: 06/16/2023]
Abstract
Organic field-effect transistors with parallel transmission and learning functions are of interest in the development of brain-inspired neuromorphic computing. However, the poor performance and high power consumption are the two main issues limiting their practical applications. Herein, an ultralow-power vertical transistor is demonstrated based on transition-metal carbides/nitrides (MXene) and organic single crystal. The transistor exhibits a high JON of 16.6 mA cm-2 and a high JON /JOFF ratio of 9.12 × 105 under an ultralow working voltage of -1 mV. Furthermore, it can successfully simulate the functions of biological synapse under electrical modulation along with consuming only 8.7 aJ of power per spike. It also permits multilevel information decoding modes with a significant gap between the readable time of professionals and nonprofessionals, producing a high signal-to-noise ratio up to 114.15 dB. This work encourages the use of vertical transistors and organic single crystal in decoding information and advances the development of low-power neuromorphic systems.
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Affiliation(s)
- Qing Zhang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Enlong Li
- National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Yongshuai Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
| | - Changsong Gao
- National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Congyong Wang
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Lin Li
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, China
| | - Dechao Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
| | - Huipeng Chen
- National and Local United Engineering Lab of Flat Panel Display Technology, Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350108, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Wenping Hu
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China
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8
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Lee Y, Kim SM, Kim K, Kim SY, Lee HI, Kwon H, Lee HW, Kim C, Some S, Hwang HJ, Lee BH. Dual-channel P-type ternary DNTT–graphene barristor. Sci Rep 2022; 12:19423. [DOI: 10.1038/s41598-022-23669-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/13/2022] [Accepted: 11/03/2022] [Indexed: 11/13/2022] Open
Abstract
AbstractP-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene–graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.
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9
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Qiao K, Arakaki S, Suzuki M, Nakayama KI. Performance Improvement with an Ultrathin p-Type Interfacial Layer in n-Type Vertical Organic Field-Effect Transistors Based on Reduced Graphene Oxide Electrode. ACS OMEGA 2022; 7:24468-24474. [PMID: 35874241 PMCID: PMC9301728 DOI: 10.1021/acsomega.2c02085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Vertical organic field-effect transistors (VOFETs) with a large current on/off ratio and easy fabrication process are highly desirable for future organic electronics. In this paper, we proposed an ultrathin p-type copper (II) phthalocyanine (CuPc) interfacial layer in reduced graphene oxide (rGO)-based VOFETs. The CuPc interfacial layer was sandwiched between the rGO electrode and the N,N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) organic layer. The introduced CuPc interfacial layer not only decreased the off-current density of the device but also slightly enhanced the on-current density. The threshold voltage of the device was also effectively improved and stabilized at around 0 V. The obtained device exhibited a current on/off ratio exceeding 106, which is the largest value reported for rGO-based VOFETs. The vertical electron mobility of the PTCDI-C8 layer estimated by the space-charge-limited current technique was 1.14 × 10-3 cm2/(V s). However, it was not the main limiting factor for the current density in this device. We totally fabricated 48 devices, and more than 75% could work. Besides, the device was stable with little performance degradation after 1 month. The use of low-cost, solution-processable rGO as work-function-tunable electrode and the application of an ultrathin CuPc interfacial layer in VOFETs may open up opportunities for future organic electronics.
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Affiliation(s)
- Kun Qiao
- Division
of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Shun Arakaki
- Division
of Applied Chemistry, School of Engineering, Osaka University, 2-1
Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Mitsuharu Suzuki
- Division
of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Ken-ichi Nakayama
- Division
of Applied Chemistry, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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10
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Yun TK, Lee Y, Kim MJ, Park J, Kang D, Kim S, Choi YJ, Yi Y, Shong B, Cho JH, Kim K. Commensurate Assembly of C 60 on Black Phosphorus for Mixed-Dimensional van der Waals Transistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105916. [PMID: 35018707 DOI: 10.1002/smll.202105916] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2021] [Revised: 11/14/2021] [Indexed: 06/14/2023]
Abstract
2D crystals can serve as templates for the realization of new van der Waals (vdW) heterostructures via controlled assembly of low-dimensional functional components. Among available 2D crystals, black phosphorus (BP) is unique due to its puckered atomic surface topography, which may lead to strong epitaxial phenomena through guided vdW assembly. Here, it is demonstrated that a BP template can induce highly oriented assembly of C60 molecular crystals. Transmission electron microscopy and theoretical analysis of the C60 /BP vdW heterostructure clearly confirm that the BP template results in oriented C60 assembly with higher-order commensurism. Lateral and vertical devices with C60 /BP junctions are fabricated via a lithography-free clean process, which allows one to investigate the ideal electrical properties of pristine C60 /BP junctions. Effective tuning of the C60 /BP junction barrier from 0.2 to 0.5 eV and maximum on-current density higher than 104 mA cm-2 are achieved with graphite/C60 /BP vertical vdW transistors. Due to the formation of high-quality C60 film and the semitransparent graphite top-electrode, the vertical transistors show high photoresponsivities up to ≈100 A W-1 as well as a fast response time under visible light illumination.
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Affiliation(s)
- Tae Keun Yun
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul, 03722, Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul, 03722, Korea
| | - Min Je Kim
- Department of Chemical & Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
| | - Jeongwoo Park
- Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea
| | - Donghee Kang
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Seongchan Kim
- Department of Chemical & Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
| | - Young Jin Choi
- Department of Chemical & Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
| | - Yeonjin Yi
- Department of Physics, Yonsei University, Seoul, 03722, Korea
| | - Bonggeun Shong
- Department of Chemical Engineering, Hongik University, Seoul, 04066, Korea
| | - Jeong Ho Cho
- Department of Chemical & Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul, 03722, Korea
- Center for Nanomedicine, Institute for Basic Science, Seoul, 03722, Korea
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11
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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12
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Choi YJ, Kim S, Woo HJ, Song YJ, Hwang E, Kang MS, Cho JH. Color-Selective Schottky Barrier Modulation for Optoelectric Logic. ACS NANO 2020; 14:16036-16045. [PMID: 33169988 DOI: 10.1021/acsnano.0c07719] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The limitation on signal processes implementable using conventional semiconductor circuits based on electric signals necessitates a revolutionary change in device structures such that they can exploit photons or light. Herein, we introduce optoelectric logic circuits that convert optical signals with different wavelengths corresponding to different colors into binary electric signals. Such circuits are assembled using unit devices in which the electric current through the semiconductor channel is effectively gated by lights of different colors. Color-selective optical modulation of the device is cleverly achieved using graphene decorated with different organic dyes as the electrode of a Schottky diode structure. The drastic change in the electrode work function under illumination induces a change in the height of the Schottky barrier formed at the electrode/semiconductor junction and consequent modulation of the electric current; we term the developed device a photonic barristor. We construct logic circuits using an array of photonic barristors and demonstrate that they execute the functions of conventional NAND and NOR gates from optical input signals.
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Affiliation(s)
- Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Hwi Je Woo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Young Jae Song
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Euyheon Hwang
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Institute of Emergent Materials, Sogang University, Seoul 04107, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
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14
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Leydecker T, Wang ZM, Torricelli F, Orgiu E. Organic-based inverters: basic concepts, materials, novel architectures and applications. Chem Soc Rev 2020; 49:7627-7670. [DOI: 10.1039/d0cs00106f] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
The review article covers the materials and techniques employed to fabricate organic-based inverter circuits and highlights their novel architectures, ground-breaking performances and potential applications.
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Affiliation(s)
- Tim Leydecker
- Institute of Fundamental and Frontier Sciences
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
- Institut National de la Recherche Scientifique (INRS)
| | - Zhiming M. Wang
- Institute of Fundamental and Frontier Sciences
- University of Electronic Science and Technology of China
- Chengdu 610054
- China
| | - Fabrizio Torricelli
- Department of Information Engineering
- University of Brescia
- 25123 Brescia
- Italy
| | - Emanuele Orgiu
- Institut National de la Recherche Scientifique (INRS)
- EMT Center
- Varennes J3X 1S2
- Canada
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15
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Huang X, Ji D, Fuchs H, Hu W, Li T. Recent Progress in Organic Phototransistors: Semiconductor Materials, Device Structures and Optoelectronic Applications. CHEMPHOTOCHEM 2019. [DOI: 10.1002/cptc.201900198] [Citation(s) in RCA: 27] [Impact Index Per Article: 5.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
Affiliation(s)
- Xianhui Huang
- School of Chemistry and Chemical Engineering andKey Laboratory of Thin Film and Microfabrication (Ministry of Education)Shanghai Jiao Tong University Shanghai 200240 China
| | - Deyang Ji
- Institute of Molecular Aggregation ScienceTianjin University Tianjin 300072 China
- Physikalisches InstitutWestfälische Wilhelms-Universität Wilhelm-Klemm-Straße 10 48149 Münster Germany
| | - Harald Fuchs
- Physikalisches InstitutWestfälische Wilhelms-Universität Wilhelm-Klemm-Straße 10 48149 Münster Germany
| | - Wenping Hu
- Collaborative Innovation Center of Chemical Science and Engineering Tianjin 300072 China
| | - Tao Li
- School of Chemistry and Chemical Engineering andKey Laboratory of Thin Film and Microfabrication (Ministry of Education)Shanghai Jiao Tong University Shanghai 200240 China
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16
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Sun J, Choi Y, Choi YJ, Kim S, Park JH, Lee S, Cho JH. 2D-Organic Hybrid Heterostructures for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1803831. [PMID: 30786064 DOI: 10.1002/adma.201803831] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2018] [Revised: 01/10/2019] [Indexed: 05/08/2023]
Abstract
The unique properties of hybrid heterostructures have motivated the integration of two or more different types of nanomaterials into a single optoelectronic device structure. Despite the promising features of organic semiconductors, such as their acceptable optoelectronic properties, availability of low-cost processes for their fabrication, and flexibility, further optimization of both material properties and device performances remains to be achieved. With the emergence of atomically thin 2D materials, they have been integrated with conventional organic semiconductors to form multidimensional heterostructures that overcome the present limitations and provide further opportunities in the field of optoelectronics. Herein, a comprehensive review of emerging 2D-organic heterostructures-from their synthesis and fabrication to their state-of-the-art optoelectronic applications-is presented. Future challenges and opportunities associated with these heterostructures are highlighted.
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Affiliation(s)
- Jia Sun
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, 410083, P. R. China
| | - Yongsuk Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Young Jin Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Jin-Hong Park
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Sungjoo Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Republic of Korea
- Department of Nano Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
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17
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Choi YJ, Kim S, Woo HJ, Song YJ, Lee Y, Kang MS, Cho JH. Remote Gating of Schottky Barrier for Transistors and Their Vertical Integration. ACS NANO 2019; 13:7877-7885. [PMID: 31245996 DOI: 10.1021/acsnano.9b02243] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
This paper introduces a strategy to modulate a Schottky barrier formed at a graphene-semiconductor heterojunction. The modulation is performed by controlling the work function of graphene from a gate that is placed laterally away from the graphene-semiconductor junction, which we refer to as the remote gating of a Schottky barrier. The remote gating relies on the sensitive work function of graphene, whose local variation induced by locally applied field effect affects the change in the work function of the entire material. Using Kelvin probe force microscopy analysis, we directly visualize how this local variation in the work function propagates through graphene. These properties of graphene are exploited to assemble remote-gated vertical Schottky barrier transistors (v-SBTs) in an unconventional device architecture. Furthermore, a vertical complementary circuit is fabricated by simply stacking two remote-gated v-SBTs (pentacene layer as the p-channel and indium gallium zinc oxide layer as the n-channel) vertically. We consider that the remote gating of graphene and the associated device architecture presented herein facilitate the extendibility of graphene-based v-SBTs in the vertical assembly of logic circuits.
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Affiliation(s)
| | | | | | | | | | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering , Sogang University , Seoul 04107 , Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering , Yonsei University , Seoul 03722 , Korea
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18
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Dathbun A, Kim Y, Choi Y, Sun J, Kim S, Kang B, Kang MS, Hwang DK, Lee S, Lee C, Cho JH. Selectively Metallized 2D Materials for Simple Logic Devices. ACS APPLIED MATERIALS & INTERFACES 2019; 11:18571-18579. [PMID: 31017757 DOI: 10.1021/acsami.9b03078] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We herein demonstrate, for the first time, transparent, flexible, and large-area monolithic MoS2 transistors and logic gates. Each single transistor consists of only two components: a monolithic chemical vapor deposition-grown MoS2 and an ion gel. Additional electrode materials are not required. The uniqueness of the device configuration is attributed to two factors. One is that a MoS2 layer is a semiconductor, but it can be doped degenerately; monolithic MoS2 can thus serve as both the electrodes and the channel of a transistor via selective doping of the material at certain positions. The other is the use of an electrolyte gate dielectric that permits effective gating (<3 V) even from an electrode coplanar with the channel. The resulting monolithic MoS2 transistors yield excellent device performance, including a maximum mobility of 1.5 cm2/V s, an on-off ratio of 105, and a turn-on voltage of -0.69 V. This unique transistor architecture was successfully applied to various semiconductors such as ReS2 and indium-gallium-zinc oxide. Furthermore, the presented devices exhibit excellent mechanical, operational, and environmental stabilities. Fabrication of complex logic circuits (NOT, NAND, and NOR gates) by integration of the monolithic MoS2 transistors is demonstrated. Finally, the monolithic MoS2 transistor was connected to drive red, green, and blue light-emitting diode pixels, which yielded high luminance at a low voltage (<3 V). We believe that the unique architecture of the devices provides a facile way for low-cost, flexible, and high-performance two-dimensional electronics.
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Affiliation(s)
| | | | | | | | | | | | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering , Sogang University , Seoul 04107 , Korea
| | - Do Kyung Hwang
- Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute , Korea Institute of Science and Technology (KIST) , Seoul 02792 , Korea
| | | | | | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering , Yonsei University , Seoul 03722 , Korea
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19
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Ma LP, Dong S, Chen M, Ma W, Sun D, Gao Y, Ma T, Cheng HM, Ren W. UV-Epoxy-Enabled Simultaneous Intact Transfer and Highly Efficient Doping for Roll-to-Roll Production of High-Performance Graphene Films. ACS APPLIED MATERIALS & INTERFACES 2018; 10:40756-40763. [PMID: 30394723 DOI: 10.1021/acsami.8b13686] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Flexible graphene transparent conductive films (TCFs) prepared by chemical vapor deposition hold great promise for next-generation wearable optoelectronic devices, but the lack of low-cost scalable intact transfer and highly efficient doping greatly limits their commercialization. Here, we report a UV-epoxy adhesive as a robust multifunctional layer for the low-cost scalable production of high-performance flexible graphene TCF. Its high solvent stability, sufficient adhesion force, and conformal contact with graphene enable the intact bubbling transfer of graphene. More importantly, a highly strong and stable p-dopant, superacid HSbF6, is in situ generated from UV-epoxy. HSbF6 substantially increases the hole concentration of pristine graphene by more than 10 times and consequently reduces its sheet resistance by up to 95% with high stability. Furthermore, it can be readily integrated with the roll-to-roll transfer process. These features enable continuous production of graphene TCFs with overall performances superior to those produced by common transfer methods and typical dopants. As an example, we demonstrate the use of this film in the capacitive multitouch panel of tablet computers.
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Affiliation(s)
- Lai-Peng Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Shichao Dong
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Wei Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
- School of Materials Science and Engineering , University of Science and Technology of China , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Dongming Sun
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Yang Gao
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Teng Ma
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, Chinese Academy of Sciences , 72 Wenhua Road , Shenyang 110016 , PR China
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20
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Liu J, Zhou K, Liu J, Zhu J, Zhen Y, Dong H, Hu W. Organic-Single-Crystal Vertical Field-Effect Transistors and Phototransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803655. [PMID: 30589469 DOI: 10.1002/adma.201803655] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2018] [Revised: 08/01/2018] [Indexed: 06/09/2023]
Abstract
Organic vertical field-effect transistors (VFETs) have attracted significant attention over the past years due to their unique characteristics of high output currents, low operation voltages, high working frequency, and promising high-density integration for circuits. However, most currently reported VFETs demonstrate poor performance, e.g., with low on/off ratio and current density. Here, the first organic-single-crystal vertical field-effect transistors (SC-VFETs) and phototransistors are constructed from 2,6-diphenyl anthracene (DPA) through a modified method. The devices exhibit high on/off ratio of 106 and a high current density of 100 mA cm-2 under a small voltage of -5 V, which are proved to be one of the best performances for organic VFETs. Furthermore, superior photoresponse performance with photoresponsivity of 110 A W-1 and detectivity of 1013 Jones is obtained under light illumination for vertical phototransistors. These results confirm the control of the intrinsic Schottky barrier height at the graphene-DPA junction along with good interfacial contact effectively suppressing the dark current to realize a large on/off ratio and high light detectivity. This vertical integration of graphene with organic single crystals via simple, effective fabrication processes opens up new opportunities to realize high-performance integrated organic vertical electronic and optoelectronic devices.
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Affiliation(s)
- Jinyu Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Ke Zhou
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jie Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jia Zhu
- Beijing Key Laboratory of Energy Conversion and Storage Materials, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Yonggang Zhen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Huanli Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Wenping Hu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072, China
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21
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Fang Y, Wu X, Lan S, Zhong J, Sun D, Chen H, Guo T. Inkjet-Printed Vertical Organic Field-Effect Transistor Arrays and Their Image Sensors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:30587-30595. [PMID: 30169017 DOI: 10.1021/acsami.8b06625] [Citation(s) in RCA: 26] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Vertical organic field-effect transistors (VOFETs) have been explored with a higher current density, a faster switch speed, and a better air stability than conventional OFETs, which dramatically enhance the capability of driving an AMOLED backplane. Unfortunately, the state-of-the-art of the fabrication of solution-processed VOFETs is still very complicated, which can only focus at a single-cell level. In this work, with the assistance of the inkjet print, the fabrication process of a solution-processed VOFET was significantly simplified, and a solution-processed VOFET array was fabricated for the first time, which exhibited excellent device performance and outstanding mechanical stability. More importantly, the VOFET arrays exhibited excellent photodetector properties, and a flexible image sensor based on VOFET arrays with multipoint visible photodetection and image recognition was demonstrated for the first time. Therefore, this novel process dramatically simplified the VOFET device fabrication process and a successfully realized array, which promoted the commercialization of VOFET and showed great potential in flexible display, multifunctional sensors, and wearable integrated circuits.
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Affiliation(s)
- Yuan Fang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
| | - Xiaomin Wu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
| | - Shuqiong Lan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
| | - Jianfeng Zhong
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
| | - Dawei Sun
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology , Fuzhou University , Fuzhou 350002 , China
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22
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Gobbi M, Orgiu E, Samorì P. When 2D Materials Meet Molecules: Opportunities and Challenges of Hybrid Organic/Inorganic van der Waals Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1706103. [PMID: 29441680 DOI: 10.1002/adma.201706103] [Citation(s) in RCA: 114] [Impact Index Per Article: 19.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2017] [Revised: 11/16/2017] [Indexed: 05/21/2023]
Abstract
van der Waals heterostructures, composed of vertically stacked inorganic 2D materials, represent an ideal platform to demonstrate novel device architectures and to fabricate on-demand materials. The incorporation of organic molecules within these systems holds an immense potential, since, while nature offers a finite number of 2D materials, an almost unlimited variety of molecules can be designed and synthesized with predictable functionalities. The possibilities offered by systems in which continuous molecular layers are interfaced with inorganic 2D materials to form hybrid organic/inorganic van der Waals heterostructures are emphasized. Similar to their inorganic counterpart, the hybrid structures have been exploited to put forward novel device architectures, such as antiambipolar transistors and barristors. Moreover, specific molecular groups can be employed to modify intrinsic properties and confer new capabilities to 2D materials. In particular, it is highlighted how molecular self-assembly at the surface of 2D materials can be mastered to achieve precise control over position and density of (molecular) functional groups, paving the way for a new class of hybrid functional materials whose final properties can be selected by careful molecular design.
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Affiliation(s)
- Marco Gobbi
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000, Strasbourg, France
| | - Emanuele Orgiu
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000, Strasbourg, France
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000, Strasbourg, France
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23
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Seo SW, Lee HS, Shin DH, Kim JH, Jang CW, Kim JM, Kim S, Choi SH. Highly-stable and -flexible graphene/(CF 3SO 2) 2NH/graphene transparent conductive electrodes for organic solar cells. NANOTECHNOLOGY 2017; 28:425203. [PMID: 28791967 DOI: 10.1088/1361-6528/aa8533] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We first employ highly-stable and -flexible (CF3SO2)2NH-doped graphene (TFSA/GR) and GR-encapsulated TFSA/GR (GR/TFSA/GR) transparent conductive electrodes (TCEs) prepared on polyethylene terephthalate substrates for flexible organic solar cells (OSCs). Compared to conventional indium tin oxide (ITO) TCEs, the TFSA-doped-GR TCEs show higher optical transmittance and larger sheet resistance. The TFSA/GR and GR/TFSA/GR TCEs show work functions of 4.89 ± 0.16 and 4.97 ± 0.18 eV, respectively, which are not only larger than those of the ITO TCEs but also indicate p-type doping of GR, and are therefore more suitable for anode TCEs of OSCs. In addition, typical GR/TFSA/GR-TCE OSCs are much more mechanically flexible than the ITO-TCE ones with their photovoltaic parameters being similar, as proved by bending tests as functions of cycle and curvature.
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Che Y, Zhang Y, Cao X, Zhang H, Song X, Cao M, Yu Y, Dai H, Yang J, Zhang G, Yao J. Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode. ACS APPLIED MATERIALS & INTERFACES 2017; 9:32001-32007. [PMID: 28853277 DOI: 10.1021/acsami.7b06629] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high-precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene-PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 × 104 A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPDs reveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.
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Affiliation(s)
| | | | - Xiaolong Cao
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology , Qingdao 266590, China
| | | | | | | | | | | | - Junbo Yang
- Center of Material Science, National University of Defense Technology , Changsha 410073, China
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25
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Lee D, Kim S, Kim Y, Cho JH. One-Transistor-One-Transistor (1T1T) Optoelectronic Nonvolatile MoS 2 Memory Cell with Nondestructive Read-Out. ACS APPLIED MATERIALS & INTERFACES 2017; 9:26357-26362. [PMID: 28707472 DOI: 10.1021/acsami.7b07077] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Taking advantage of the superlative optoelectronic properties of single-layer MoS2, we developed a one-transistor-one-transistor (1T1T)-type MoS2 optoelectronic nonvolatile memory cell. The 1T1T memory cell consisted of a control transistor (CT) and a memory transistor (MT), in which the drain electrode of the MT was connected electrically to the gate electrode of the CT, whereas the source electrode of the CT was connected electrically to the gate electrode of the MT. Single-layer MoS2 films were utilized as the channel materials in both transistors, and gold nanoparticles acted as the floating gates in the MT. This 1T1T device architecture allowed for a nondestructive read-out operation in the memory because the writing (programming or erasing) and read-out processes were operated separately. The switching of the CT could be controlled by light illumination as well as the applied gate voltage due to the strong light absorption induced by the direct band gap of single-layer MoS2 (∼1.8 eV). The resulting MoS2 1T1T memory cell exhibited excellent memory performance, including a large programming/erasing current ratio (over 106), multilevel data storage (over 6 levels), cyclic endurance (200 cycles), and stable retention (103 s).
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Affiliation(s)
- Dain Lee
- SKKU Advanced Institute of Nanotechnology (SAINT) and ‡School of Chemical Engineering, Sungkyunkwan University , Suwon 16419, Korea
| | - Seongchan Kim
- SKKU Advanced Institute of Nanotechnology (SAINT) and ‡School of Chemical Engineering, Sungkyunkwan University , Suwon 16419, Korea
| | - Yeontae Kim
- SKKU Advanced Institute of Nanotechnology (SAINT) and ‡School of Chemical Engineering, Sungkyunkwan University , Suwon 16419, Korea
| | - Jeong Ho Cho
- SKKU Advanced Institute of Nanotechnology (SAINT) and ‡School of Chemical Engineering, Sungkyunkwan University , Suwon 16419, Korea
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26
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Parui S, Ribeiro M, Atxabal A, Llopis R, Casanova F, Hueso LE. Graphene as an electrode for solution-processed electron-transporting organic transistors. NANOSCALE 2017; 9:10178-10185. [PMID: 28517016 DOI: 10.1039/c7nr01007a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Organic field-effect transistors (OFETs) are fundamental building blocks for plastic electronics such as organic photovoltaics or bendable displays with organic light emitting diodes, and radio-frequency identification (RFID) tags. A key part in the performance of OFET is the organic material constituting the channel. OFETs based on solution-processed polymers represent a new class of organic electronic devices. Recent developments in upscale solution-processed polymers have advanced towards high throughput, low-cost, and environmentally friendly materials for high-performance applications. Together with the integration of high performance materials, another enduring challenge in OFET development is the improvement and control of the injection of charge carriers. Graphene, a two-dimensional layer of covalently bonded carbon atoms, is steadily making progress into applications relying on van der Waals heterointerfaces with organic semiconductors. Here, we demonstrate the versatile operation of solution-processed organic transistors both in lateral and vertical geometries by exploiting the weak-screening effect and work function modulation properties of graphene electrodes. Our results demonstrate a general strategy for overcoming traditional noble metal electrodes and to integrate graphene with solution-processed Polyera ActiveInk™ N2200 polymer transistors for high-performance devices suitable for future plastic electronics.
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Affiliation(s)
- Subir Parui
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain.
| | - Mário Ribeiro
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain.
| | - Ainhoa Atxabal
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain.
| | - Roger Llopis
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain.
| | - Fèlix Casanova
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain. and IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE, 20018 Donostia-San Sebastian, Basque Country, Spain. and IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
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27
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Feng S, Lin Z, Gan X, Lv R, Terrones M. Doping two-dimensional materials: ultra-sensitive sensors, band gap tuning and ferromagnetic monolayers. NANOSCALE HORIZONS 2017; 2:72-80. [PMID: 32260668 DOI: 10.1039/c6nh00192k] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The successful isolation of graphene from graphite in 2004 opened up new avenues to study two-dimensional (2D) systems from layered materials. Since then, research on 2D materials, including graphene, hexagonal-BN (h-BN), transition metal dichalcogenides (TMDs) and black phosphorous, has been extensive, thus leading to various possible applications in the fields of optoelectronics, biomedicine, spintronics, electrochemistry, energy storage and catalysis. However, certain barriers still need to be overcome when dealing with real applications, such as graphene's lack of a bandgap, restricting its use in semiconductor electronics. In this context, a possible solution is to tailor the electronic and optical properties of 2D materials by introducing defects or elemental doping. Although defects play a major role in modifying materials properties, the fact that we call them "defects" might have a negative impact. There has been a long debate on whether structurally perfect materials are equally relevant for modifying the properties and for applications. In this focus article, we clarify that although extra large amounts of defects could be detrimental to the materials properties, well-designed defects might lead to unprecedented properties and interesting applications that pristine materials do not have. Given the relatively short history of research on doped 2D layered materials, our objective is to answer and clarify the following fundamental questions: why does nanomaterial doping offer improved physico-chemical properties? What new applications arise from doping? And what are the current challenges along this line?
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Affiliation(s)
- Simin Feng
- Department of Physics and Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA.
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Li F, Song C, Cui B, Peng J, Gu Y, Wang G, Pan F. Photon-Gated Spin Transistor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1604052. [PMID: 27797123 DOI: 10.1002/adma.201604052] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2016] [Revised: 09/13/2016] [Indexed: 06/06/2023]
Abstract
A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation.
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Affiliation(s)
- Fan Li
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bin Cui
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Jingjing Peng
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Guangyue Wang
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
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Li J, Han X, Bai Q, Shan T, Lu P, Ma Y. Electropolymerized AIE-active polymer film with high quantum efficiency and its application in OLED. ACTA ACUST UNITED AC 2016. [DOI: 10.1002/pola.28414] [Citation(s) in RCA: 15] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Jinyu Li
- State Key Laboratory of Supramolecular Structure and Materials; Jilin University; 2699 Qianjin Avenue Changchun 130012 China
| | - Xiao Han
- State Key Laboratory of Supramolecular Structure and Materials; Jilin University; 2699 Qianjin Avenue Changchun 130012 China
| | - Qing Bai
- State Key Laboratory of Supramolecular Structure and Materials; Jilin University; 2699 Qianjin Avenue Changchun 130012 China
| | - Tong Shan
- State Key Laboratory of Supramolecular Structure and Materials; Jilin University; 2699 Qianjin Avenue Changchun 130012 China
| | - Ping Lu
- State Key Laboratory of Supramolecular Structure and Materials; Jilin University; 2699 Qianjin Avenue Changchun 130012 China
| | - Yuguang Ma
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology; Guangzhou 510640 China
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