Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping

Two-dimensional phosphorus carbides (β-PC) as highly efficient metal-free electrocatalysts for lithium-sulfur batteries: a first-principles study

Li-S batteries are considered as the next-generation batteries due to their exceptional theoretical capacity. However, their practical application is hampered by the shuttling effects of lithium polysulfides (LiPSs) and the sluggish Li2S decomposition, particularly the slow conversion from Li2S2 to Li2S. Addressing these challenges, the quest for effective catalysts that can accelerate the conversion of LiPSs and enhance the performance of Li-S batteries is crucial. In this study, we explored the electrocatalytic activity of two-dimensional phosphorus carbides (β0-PC and β1-PC) in Li-S batteries based on first-principles calculations. Our findings reveal that these materials demonstrate optimal binding strengths (ranging from 1.09 to 1.83 eV) with long-chain LiPSs, effectively preventing them from dissolving into the electrolyte. Additionally, they show remarkable catalytic activity during the sulfur redox reaction (SRR), with ΔG being only 0.37 eV for β0-PC and 0.13 eV for β1-PC. The low energy barrier induced by β-PC enhances ion migration barrier and significantly expedites the charge/discharge cycles of Li-S batteries. Furthermore, we investigated the conversion dynamics of Li2S2 to Li2S, employing the computational lithium electrode (CLE) model. The excellent performance in these aspects underscores the potential of these materials as electrocatalysts for Li-S batteries, paving the way for advanced high-efficiency energy storage solutions.

Carrier transport in bulk and two-dimensional Zn2(V,Nb,Ta)N3 ternary nitrides

Density functional theory-based simulations are applied to study the electronic structures, carrier masses, carrier mobility and carrier relaxation times in bulk and two-dimensional (2D) Zn2(V,Nb,Ta)N3 ternary nitrides. Bulk Zn2(V,Nb,Ta)N3 possess moderate band gap sizes of 2.17 eV, 3.11 eV, and 3.40 eV, respectively. Two-dimensional Zn2(V,Nb,Ta)N3 have slightly higher band gap sizes of 2.77 eV, 3.33 eV, and 3.23 eV, respectively. Carrier mass, carrier mobility and carrier relaxation time are found to be anisotropic in all the studied structures. Bulk and 2D samples show an order of magnitude higher electron mobility compared to hole mobility. The highest electron mobility in bulk Zn2NbN3 and Zn2TaN3 is about ∼103 cm2 V-1 s-1. Importantly, for 2D Zn2NbN3, an abnormally high electron mobility of 1.67 × 104 cm2 V-1 s-1 is observed, which is not inferior to the highest known electron mobility values in 2D materials. Such a high electron mobility in 2D Zn2NbN3 can be attributed to a strong delocalization of the conduction band minimum, which is responsible for electron transport. Therefore, this work opens up new materials for high performance nanodevices, such as tandem solar cells and field-effect transistors. This study also provides deep physical insights into the nature of carrier transport mechanisms in bulk and 2D Zn2(V,Nb,Ta)N3 ternary nitrides.

Electrostatic Gating of Phosphorene Polymorphs

The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

Instructive Synergistic Effect of Coordinating Phosphorus in Transition-Metal-Doped β-Phosphorus Carbide Guiding the Design of High-Performance CO2RR Electrocatalysts

Developing efficient electrocatalysts for the CO2 reduction reaction (CO2RR) is the key and difficult point to alleviate energy and climate issues. The synergistic catalytic effects between metal and nonmetal elements have gained attention for the design of the CO2RR electrocatalysts. The realization of this effect requires a suitable combination of metal and nonmetal elements, as well as the support of suitable substrates. Based on this, the transition-metal-doped β-phosphorus carbide (TM-PC) (TM = 4d and 5d transition metals except Tc) catalysts are designed, and their structures, electronic properties, and CO2RR catalytic performances are studied in depth via first-principle calculations. The strong bonding ability and high reactivity brought by the moderate electronegativity and abundant electrons and orbitals of phosphorus are the key to the excellent catalytic performance of TM-PCs. Coordinating phosphorus atoms improve the catalyst activity in two ways: (1) regulating the electron transfer of the TM active site, and (2) acting as the active site and changing the reaction mechanism. With the participation of coordinating P atoms, the "relay" of active sites reduces the limiting potential values for the reduction from CO2 to CH4 catalyzed by Cr-PC and Mo-PC by 0.27 and 0.23 V, respectively, compared with pathways where only the TM atom is the active site, reaching -0.55 and -0.63 V, respectively. Regarding the coordinating P atom as the second active site, Cr-PC and Mo-PC can catalyze the production of CH3CH2OH at limiting potential values of -0.54 and -0.67 V, respectively. This study demonstrates the dramatic enhancement of catalytic activity caused by suitable nonmetal coordinating atoms such as P and provides a reference for the design of high-performance CO2RR electrocatalysts based on metal-nonmetal coordinating active centers.

High-Performance Infrared Detectors Based on Black Phosphorus/Carbon Nanotube Heterojunctions

Infrared detectors have broad application prospects in the fields of detection and communication. Using ideal materials and good device structure is crucial for achieving high-performance infrared detectors. Here, we utilized black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to construct a vertical van der Waals heterostructure, resulting in high-performance photovoltaic infrared detectors. In the device, a strong built-in electric field was formed in the heterojunction with a favored energy-band matching between the BP and the SWCNT, which caused a good photovoltaic effect. The fabricated devices exhibited a diode-like rectification behavior in the dark, which had a high rectification ratio up to a magnitude of 104 and a low ideal factor of 1.4. Under 1550 nm wavelength illumination, the 2D BP/SWCNT film photodetector demonstrated an open-circuit voltage of 0.34 V, a large external power conversion efficiency (η) of 7.5% and a high specific detectivity (D*) of 3.1 × 109 Jones. This external η was the highest among those for the photovoltaic devices fabricated with the SWCNTs or the heterostructures based on 2D materials and the obtained D* was also higher than those for most of the infrared detectors based on 2D materials or carbon materials. This work showcases the application potential of BP and SWCNTs in the detection field.

Theoretical prediction and shape-controlled synthesis of two-dimensional semiconductive Ni3TeO6

Current progress in two-dimensional (2D) materials explorations leads to constant specie enrichments of possible advanced materials down to two dimensions. The metal chalcogenide-based 2D materials are promising grounds where many adjacent territories are waiting to be explored. Here, a stable monolayer Ni3TeO6 (NTO) structure was computationally predicted and its stacked 2D nanosheets experimentally synthesized. Theoretical design undergoes featuring coordination of metalloid chalcogen, slicing the bulk structure, geometrical optimizations and stability study. The predicted layered NTO structure is realized in nanometer-thick nanosheets via a one-pot shape-controlled hydrothermal synthesis. Compared to the bulk, the 2D NTO own a lowered bandgap energy, more sensitive wavelength selectivity and an emerging photocatalytic hydrogen evolution ability under visible light. Beside a new 2D NTO with the optoelectrical and photocatalytic merits, its existing polar space group, structural specification, and design route are hoped to benefit 2D semiconductor innovations both in species enrichment and future applications.

Role of transition metal d-orbitals in single-atom catalysts for nitric oxide electroreduction to ammonia

Recently, surging interests exist in direct electrochemical ammonia (NH₃) synthesis from nitric oxide (NO) due to the dual benefit of NH₃ synthesis and NO removal. However, designing highly efficient catalysts is still challenging. Based on density functional theory, the best ten candidates of transition-metal atoms (TMs) embedded in phosphorus carbide (PC) monolayer is screened out as highly active catalysts for direct NO-to-NH₃ electroreduction. The employment of machine learning-aided theoretical calculations helps to identify the critical role of TM-d orbitals in regulating NO activation. A V-shape tuning rule of TM-d orbitals for the Gibbs free energy change of NO or limiting potentials is further revealed as the design principle of TM embedded PC (TM-PC) for NO-to-NH₃ electroreduction. Moreover, after employing effective screening strategies including surface stability, selectivity, the kinetic barrier of potential-determining step, and thermal stability comprehensively studied for the ten TM-PC candidates, only Pt embedded PC monolayer has been identified as the most promising direct NO-to-NH₃ electroreduction with high feasibility and catalytic performance. This work not only offers a promising catalyst but also sheds light on the active origin and design principle of PC-based single-atom catalysts for NO-to-NH₃ conversion.

A Portable Wireless Intelligent Nanosensor for 6,7-Dihydroxycoumarin Analysis with A Black Phosphorene and Nano-Diamond Nanocomposite-Modified Electrode

In this work, a novel portable and wireless intelligent electrochemical nanosensor was developed for the detection of 6,7-dihydroxycoumarin (6,7-DHC) using a modified screen-printed electrode (SPE). Black phosphorene (BP) nanosheets were prepared via exfoliation of black phosphorus nanoplates. The BP nanosheets were then mixed with nano-diamond (ND) to prepare ND@BP nanocomposites using the self-assembly method, achieving high environmental stability. The nanocomposite was characterized by SEM, TEM, Raman, XPS and XRD. The nanocomposite was used for the modification of SPE to improve its electrochemical performances. The nanosensor displayed a wide linear range of 0.01-450.0 μmol/L with a low detection limit of 0.003 μmol/L for 6,7-DHC analysis. The portable and wireless intelligent electrochemical nanosensor was applied to detect 6,7-DHC in real drug samples by the standard addition method with satisfactory recoveries, which extends the application of BP-based nanocomposite for electroanalysis.

Anisotropic Carrier Mobility and Spectral Fingerprints of Two-Dimensional γ-Phosphorus Carbide with Antisite Defects

We apply density functional theory to study carrier mobility in a γ-phosphorus carbide monolayer. Although previous calculations predicted high and anisotropic mobility in this material, we show that the mobility can be significantly influenced by common antisite defects. We demonstrate that at equilibrium concentrations defects do not inhibit carrier mobility up to temperatures of 1000 K. However, defects can change the mobility at high nonequilibrium concentrations of about 10^-4 to 10^-2 defects per atom. At the low end of this concentration range, defects act as traps for charge carriers and inhibit their mobility. At the high end of this range, defects change the effective carrier masses and deformation potentials, and they can lead to both an increase and a decrease in mobility. We also report the Raman and IR spectra associated with antisite defects. We predict new vibrational modes and shifts of the existing modes due to the defects.

Interlayer Doping of Cu on Bilayer Black Phosphorus for Enhanced Charge Transfer and Transport Properties

Metal doping between black phosphorus (BP) layers has great advantages in modulating electronic properties. Here, the effects of Cu intercalation on charge transfer and carrier dynamics are investigated by theoretical calculations. Relative to the pristine bilayer BP, Cu suppresses the nonradiative electron-hole recombination, reducing the major pathways of energy and current loss. Furthermore, we investigate a novel pn homogeneous junction based on the Cu-doped bilayer BP, which shows enhanced transport properties and Ohmic contact characteristics. This is because doping leads to the transformation of BP from p-type to n-type, charge accumulation on conduction bands allows electrons to be easily transferred to the p-type bilayer BP, and associated electrical properties can be modulated by the doping concentration. This study has fundamental importance for understanding structure-property relationships in metal intercalation, which is an important guidance for integration and interlayer engineering for two-dimensional materials.

Theoretical Progress of 2D Six-Membered-Ring Inorganic Materials as Anodes for Non-Lithium-Ion Batteries

The use and storage of renewable and clean energy has become an important trend due to resource depletion, environmental pollution, and the rising price of refined fossil fuels. Confined by the limited resource and uneven distribution of lithium, non-lithium-ion batteries have become a new focus for energy storage. The six-membered-ring (SMR) is a common structural unit for numerous material systems. 2D SMR inorganic materials have unique advantages in the field of non-lithium energy storage, such as fast electrochemical reactions, abundant active sites and adjustable band gap. First-principles calculations based on density functional theory (DFT) can provide a basic understanding of materials at the atomic-level and establish the relationship between SMR structural units and electrochemical energy storage. In this review, the theoretical progress of 2D SMR inorganic materials in the field of non-lithium-ion batteries in recent years is discussed to summarize the common relationship among 2D SMR non-lithium energy storage anodes. Finally, the existing challenges are analyzed and potential solutions are proposed.

Tunneling transport of 2D anisotropic XC (X = P, As, Sb, Bi) with a direct band gap and high mobility: a DFT coupled with NEGF study

Direct bandgap and significant anisotropic properties are crucial and beneficial for nanoelectronic applications. In this work, through first-principles calculations, we investigate novel two-dimensional (2D) α-XC (X = P, As, Sb, Bi) materials, which possess a direct bandgap of 0.73 to 1.40 eV with remarkable anisotropic electronic properties. Intriguingly, 2D α-XC presents the highest electron mobility near 8 × 10³ cm² V^-1 s^-1 along the Γ-X direction. Moreover, the transfer characteristics of the 2D α-XC TFETs are thoroughly assessed through NEGF methods. AsC TFETs demonstrate an on-state current larger than 2.2 × 10³ μA μm^-1, which can satisfy the International Technology Roadmap for Semiconductors (ITRS) for high-performance requirements. In particular, the minimum value of subthreshold swing of devices is as low as 15 mV dec^-1, indicating excellent device switching characteristics. The relevant calculation results show that 2D α-XC monolayers could be a promising candidate in next-generation high-performance device applications.

Mid-Infrared Optoelectronic Devices Based on Two-Dimensional Materials beyond Graphene: Status and Trends

Since atomically thin two-dimensional (2D) graphene was successfully synthesized in 2004, it has garnered considerable interest due to its advanced properties. However, the weak optical absorption and zero bandgap strictly limit its further development in optoelectronic applications. In this regard, other 2D materials, including black phosphorus (BP), transition metal dichalcogenides (TMDCs), 2D Te nanoflakes, and so forth, possess advantage properties, such as tunable bandgap, high carrier mobility, ultra-broadband optical absorption, and response, enable 2D materials to hold great potential for next-generation optoelectronic devices, in particular, mid-infrared (MIR) band, which has attracted much attention due to its intensive applications, such as target acquisition, remote sensing, optical communication, and night vision. Motivated by this, this article will focus on the recent progress of semiconducting 2D materials in MIR optoelectronic devices that present a suitable category of 2D materials for light emission devices, modulators, and photodetectors in the MIR band. The challenges encountered and prospects are summarized at the end. We believe that milestone investigations of 2D materials beyond graphene-based MIR optoelectronic devices will emerge soon, and their positive contribution to the nano device commercialization is highly expected.

Doping effects on the antibonding states and carriers of two-dimensional PC6

The absence of a bandgap in pristine graphene severely restricts its application, and there is high demand for other novel two-dimensional (2D) materials. PC₆ has recently emerged as a promising 2D material with a direct band gap and ultrahigh carrier mobility. In light of the remarkable properties of an intrinsic PC₆ monolayer, it would be intriguing to find out whether a doped PC₆ monolayer displays properties superior to the pure system. In this study, we have performed density functional theory calculations to understand the doping effects of both P-site and C-site substitution in PC₆ and, for the first time, we discovered doping-related impurity-level anomalies in this system. We successfully explained why no donor or acceptor defect states exist in the band structures of X_P-PC₆ (X = C, Ge, Sn, O, S, Se, or Te). In group-IV-substituted systems, these dopant states hybridize with host states near the Fermi level rather than act as acceptors, which is deemed to be a potential way to tune the mobility of PC₆. In the case of group-VI substitution, the underlying mechanism relating to doping anomalies arises from excess electrons occupying antibonding states.

Electrochemistry of P-C Bonds in Phosphorus-Carbon Based Anode Materials

Phosphorus-carbon anode materials for alkali-metal ion storage in rechargeable batteries can simultaneously achieve high-energy density and fast charging. The P-C-bonded structure in the phosphorus-carbon materials has been observed and acknowledged to be a critical structural feature that renders improved cycling stability and rate performance. However, the underlying mechanisms, especially the role played by P-C bonds, remain elusive. By combining computational simulations and spectroscopic characterizations, we reveal that the stability of P-C bonds is critical to the electrochemical performance. In the discharge process, P-P bonds are fragile, while the bonding state of the P-C bonds is almost unchanged since electrons were mainly received by the P atoms to form lone pairs. The preserved P-C clusters can effectively serve as a reunion center for the recovery of P-P bonds in the recharging process, leading to a moderate energy change and improved cycling reversibility and structural stability of the phosphorous for electrochemical energy storage.

Janus MoPC Monolayer with Superior Electrocatalytic Performance for the Hydrogen Evolution Reaction

Designing the earth's abundant and high-performance electrocatalysts, which possess high stability, excellent electrical conductivity, inherent active sites, and catalytic activity identical with Pt, is challenging but crucial for the hydrogen evolution reaction (HER). By first-principles structure search simulations, we identify a new two-dimensional (2D) MoPC material with the Janus structure as a promising catalyst. This novel 2D monolayer has superior stability and metallic conductivity. Especially, it exhibits a remarkable HER catalytic activity, where all of the constituent atoms, including Mo, P, and C, can uniformly act as active sites in view of the near-zero ΔG_H* value. Its active site density counts up to 1.46 × 10¹⁵ site/cm², larger than that of many reported materials and even comparable to Pt. The excellent HER catalytic activity can also be maintained at a very high H coverage with or without external strain. The MoPC monolayer can produce H₂ spontaneously through the favorable Volmer-Heyrovsky pathway. The detailed catalytic mechanism behind the high HER activity has been also analyzed. Our work provides a feasible action for the experimental synthesis of excellent HER catalysts.

Novel Two-Dimensional ABX3 Dirac Materials: Achieving a High-Speed Strain Sensor via a Self-Doping Effect

The pristine semimetal property of two-dimensional (2D) Dirac materials has limited their practical applications in today's electronic devices. Here we report a new type of 2D Dirac material, termed ABX₃ (A = F, Cl, Br, or I; B = P or As; X = C or Si) monolayers. We demonstrate that 14 ABX₃ monolayers possess good stability and high Fermi velocities. The FPC₃, ClPC₃, BrPC₃, and FAsC₃ monolayers exhibit a pristine n-type self-doping Dirac cone due to the interactions of electrons between the A-B units and C₆ rings, which is beneficial for realizing high-speed carriers. Interestingly, the ClPSi₃ monolayer exhibits remarkable responses to strain because a self-doping Dirac cone can be induced by relatively small in-plane biaxial strains (-5%), and the current-voltage (I-V) curves verified that the response strength is 11.57 times that of the graphene-based strain sensor at a bias of 1.10 V, indicating that the ClPSi₃ monolayer could be used as a potential excellent strain sensor.

Monolayer PC3: A promising material for environmentally toxic nitrogen-containing multi gases

Carbon and its analogous nanomaterials are beneficial for toxic gas sensors since they are used to increase the electrochemically active surface region and improve the transmission of electrons. The present article addresses a detailed investigation on the potential of the monolayer PC₃ compound as a possible sensor material for environmentally toxic nitrogen-containing gases (NCGs), namely NH₃, NO, and NO₂. The entire work is carried out under the frameworks of density functional theory, ab-initio molecular dynamics simulations, and non-equilibrium Green's function approaches. The monolayer-gas interactions are studied with the van der Waals dispersion correction. The stability of pristine monolayer PC₃ is confirmed through dynamical, mechanical, and thermal analyses. The mobility and relaxation time of 2D PC₃ sensor material with NCGs are obtained in the range of 10¹-10⁴ cm² V^-1 s^-1 and 10¹-10³ fs for armchair and zigzag directions, respectively. Out of six possible adsorption sites for toxic gases on the PC₃ surface, the most prominent site is identified with the highest adsorption energy for all the NCGs. Considering the most stable configuration site of the NCGs, we have obtained relevant electronic properties by utilizing the band unfolding technique. The considerable adsorption energies are obtained for NO and NO₂ compared to NH₃. Although physisorption is observed for all the NCGs on the PC₃ surface, NO₂ is found to convert into NO and O at 5.05 ps (at 300 K) under molecular dynamics simulation. The maximum charge transfer (0.31e) and work function (5.17 eV) are observed for the NO₂ gas molecule in the series. Along with the considerable adsorption energies for NO and NO₂ gas molecules, their shorter recovery time (0.071 s and 0.037 s, respectively) from the PC₃ surface also identifies 2D PC₃ as a promising sensor material for those environmentally toxic gases. The experimental viability and actual implications for PC₃ monolayer as NCGs sensor material are also confirmed by examining the humidity effect and transport properties with modeled sensor devices. The transport properties (I-V characteristics) reflect the significant sensitivity of PC₃ monolayer toward NO and NO₂ molecules. These results certainly confirm PC₃ monolayer as a promising sensor material for NO and NO₂ NCG molecules.

SiCP4 Monolayer with a Direct Band Gap and High Carrier Mobility for Photocatalytic Water Splitting

Photocatalytic water splitting is a promising method that uses sunlight to generate hydrogen from water to provide clean and renewable energy resources. Two-dimensional materials with abundant active sites are ideal candidates for achieving this goal; however, few of the known ones can meet the rigorous requirement of photocatalytic water splitting. By using first-principles swarm-intelligence search calculations, we have successfully identified two new semiconducting SiCP₂ and SiCP₄ monolayers. Their band-edge heights evidently straddle the redox potentials of water. For the more prominent SiCP₄ monolayer, additional external biases of 0.32 V for water oxidation and 0.03 V for the hydrogen reduction half-reaction would be enough to drive its reaction sequences at pH 0, and it can spontaneously proceed to the water oxidation half-reaction in a neutral solution. Interestingly, the excellent optical absorbance ability (∼10⁴ cm^-1) and high carrier mobility (∼10⁵ cm² V^-1 s^-1) of SiCP₂ and SiCP₄ facilitate the utilization of sunlight and the fast transportation of photogenerated carriers. All of these properties make SiCP₂ and SiCP₄ monolayers promising candidates for applications in photocatalytic water splitting.

Carbon phosphide nanoribbons with spatial inversion symmetry: robust generators of pure spin current with photogalvanic effect

Our recent work has demonstrated that spin-dependent photogalvanic effect (PGE) is an ideal way to induce pure spin current in certain centrosymmetric systems (Phys. Rev. B 102, 081402 (2020)), and...

Spiderweb Nanomechanical Resonators via Bayesian Optimization: Inspired by Nature and Guided by Machine Learning

From ultrasensitive detectors of fundamental forces to quantum networks and sensors, mechanical resonators are enabling next-generation technologies to operate in room-temperature environments. Currently, silicon nitride nanoresonators stand as a leading microchip platform in these advances by allowing for mechanical resonators whose motion is remarkably isolated from ambient thermal noise. However, to date, human intuition has remained the driving force behind design processes. Here, inspired by nature and guided by machine learning, a spiderweb nanomechanical resonator is developed that exhibits vibration modes, which are isolated from ambient thermal environments via a novel "torsional soft-clamping" mechanism discovered by the data-driven optimization algorithm. This bioinspired resonator is then fabricated, experimentally confirming a new paradigm in mechanics with quality factors above 1 billion in room-temperature environments. In contrast to other state-of-the-art resonators, this milestone is achieved with a compact design that does not require sub-micrometer lithographic features or complex phononic bandgaps, making it significantly easier and cheaper to manufacture at large scales. These results demonstrate the ability of machine learning to work in tandem with human intuition to augment creative possibilities and uncover new strategies in computing and nanotechnology.

Gas sensing detection in carbon phosphide monolayer: Improving COx sensitivity through B-doping

A 2D materials engineering challenge is searching for a nanodevice capable to detect and distinguish gas molecules through electrical identification. Herein, the B-doped carbon phosphide monolayer (B-doped γ-CP) was explored...

A multifunctional 2D black phosphorene-based platform for improved photovoltaics

As one of the latest additions to the 2D nanomaterials family, black phosphorene (BP, monolayer or few-layer black phosphorus) has gained much attention in various forms of solar cells. This is due largely to its intriguing semiconducting properties such as tunable direct bandgap (from 0.3 eV in the bulk to 2.0 eV in the monolayer), extremely high ambipolar carrier mobility, broad visible to infrared light absorption, etc. These appealing optoelectronic attributes make BP a multifunctional nanomaterial for use in solar cells via tailoring carrier dynamics, band energy alignment, and light harvesting, thereby promoting the rapid development of third-generation solar cells. Notably, in sharp contrast to the copious work on revealing the fundamental properties of BP, investigation into the utility of BP is comparatively less, particularly in the area of photovoltaics. Herein, we first identify and summarize an array of unique characteristics of BP that underpin its application in photovoltaics, aiming at providing inspiration to develop new designs and device architectures of photovoltaics. Subsequently, state-of-the-art synthetic routes (i.e., top-down and bottom-up) to scalable BP production that facilitates its applications in optoelectronic materials and devices are outlined. Afterward, recent advances in a diverse set of BP-incorporated solar cells, where BP may impart electron and/or hole extraction and transport, function as a light absorber, provide dielectric screening for enhancing exciton dissociation, and modify the morphology of photoabsorbers, are discussed, including organic solar cells, dye-sensitized solar cells, heterojunction solar cells and perovskite solar cells. Finally, the challenges and opportunities in this rapidly evolving field are presented.

First-principles study on the electronic structures and contact properties of graphene/XC (X = P, As, Sb, and Bi) van der Waals heterostructures

The electrical contacts at the van der Waals (vdW) interface between two-dimensional (2D) semiconductors and metal electrodes could dramatically affect the device performance. Herein, we construct a series of graphene (Gr)/XC (X = P, As, Sb, and Bi) vdW heterostructures, in which XC monolayers have aroused considerable attention recently as an emerging class of 2D semiconductors. The electronic structures and contact properties of Gr/XC vdW heterostructures are investigated systematically using first-principles calculations. The band structures indicate that both Gr/PC and Gr/AsC heterostructures form n-type Schottky contacts with Schottky barrier heights (SBHs) of 0.01 eV and 0.43 eV, respectively, while both Gr/SbC and Gr/BiC heterostructures preferably form Ohmic contacts. The different X atoms result in different work functions, electron flows, charge distributions and orientations of the dipole moment in Gr/XC heterostructures. Moreover, the tunneling probabilities increase with the increasing atom radius of X from P to Bi, indicating the most improved current and smaller contact resistance at the interfaces of Gr/BiC compared to Gr/PC, Gr/AsC and Gr/SbC heterostructures. Our work could provide meaningful information for designing high-performance nanoelectronic devices based on Gr/XC heterostructures.

Wide Band Gap P3S Monolayer with Anisotropic and Ultrahigh Carrier Mobility

Phosphorene has offered an additional advantage for developing new optoelectronic devices due to its anisotropic and high carrier mobility. However, its instability in air causes a rapid degradation of the performance of the device. Thus, improving the stability of phosphorene while maintaining its original properties has become the key to the development of high-performance electronic devices. Herein, we propose that the formation of two-dimensional (2D) P-rich P-S compounds could achieve this goal. First-principles swarm-structural searches revealed two previously unkonwn P₃S and P₂S monolayers. The P₃S monolayer, consisting of n-bicyclo-P₆ units along the armchair direction, exhibits anisotropic and wide band gap characteristics. Interestingly, its carrier mobility reaches 1.11 × 10⁴ cm² V^-1 s^-1 and is much higher than in phosphorene. Its electronic band gap and optical absorption coefficients in the ultraviolet region reach 2.71 eV and 10⁵ cm^-1, respectively. Additionally, the P₃S monolayer has a high structural stability and resistance to air oxidation.

Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors

The relative low hole mobility of p-channel building block device challenges the continued miniaturization of modern electronic chips. Metal-semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)-compatible metals are selected to deposit on the surface of the important p-channel building block of GaSb nanowire field-effect-transistors (NWFETs), demonstrating the efficient strategy of hole mobility enhancement by metal-semiconductor junction. When deposited with lower work function metal of Al, the peak hole mobility of GaSb NWFET can be enhanced to as high as ≈3372 cm² V^-1 s^-1 , showing three times than the un-deposited one. The as-studied metal-semiconductor junction is also efficient for the hole mobility enhancement of other p-channel devices, such as GaAs NWFET, GaAs film FET, and WSe₂ FET. With the enhanced mobility, the as-constructed CMOS inverter shows good invert characteristics, showing a relatively high gain of ≈18.1. All results may be regarded as important advances to the next-generation electronics.

Structural, Electronic, and Optical Properties of Hexagonal XC6 (X=N, P, As, and Sb) Monolayers

Based on first-principles calculations, a novel family of two-dimensional (2D) IV-V compounds, XC₆ (X=N, P, As and Sb), is proposed. These compounds exhibit excellent stability, as determined from the cohesive energies, phonon dispersion analysis, ab initio molecular dynamics (AIMD) simulations, and mechanical properties. In this type of structure, the carbon atom is sp² hybridized, whereas the X (N, P, As and Sb) atom is nonplanar sp³ hybridized with one 2p_z orbital filled with lone pair electrons. NC₆ , PC₆ , AsC₆ and SbC₆ monolayers are intrinsic indirect semiconductors with wide bandgaps of 2.02, 2.36, 2.77, and 2.85 eV (based on HSE06 calculations), respectively. After applying mechanical strain, PC₆ , AsC₆ and SbC₆ monolayers can be transformed from indirect to direct semiconductors. The appropriate bandgaps and well-located band edge positions make XC₆ monolayers potential materials for photocatalytic water splitting. XC₆ family members also have high absorption coefficients (∼10⁵  cm^-1 ) in the ultraviolet region and higher electron mobilities (∼10³  cm²  V^-1  s^-1 ) than many known 2D semiconductors.

First-Principles Prediction of Two-Dimensional B3C2P3 and B2C4P2: Structural Stability, Fundamental Properties, and Renewable Energy Applications

The existence of two novel hybrid two-dimensional (2D) monolayers, 2D B₃C₂P₃ and 2D B₂C₄P₂, has been predicted based on the density functional theory calculations. It has been shown that these materials possess structural and thermodynamic stability. 2D B₃C₂P₃ is a moderate band gap semiconductor, while 2D B₂C₄P₂ is a zero band gap semiconductor. It has also been shown that 2D B₃C₂P₃ has a highly tunable band gap under the effect of strain and substrate engineering. Moreover, 2D B₃C₂P₃ produces low barriers for dissociation of water and hydrogen molecules on its surface, and shows fast recovery after desorption of the molecules. The novel materials can be fabricated by carbon doping of boron phosphide and directly by arc discharge and laser ablation and vaporization. Applications of 2D B₃C₂P₃ in renewable energy and straintronic nanodevices have been proposed.

Point Defects in Two-Dimensional γ-Phosphorus Carbide

Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here, a comprehensive density functional theory-based investigation of seven kinds of point defects in a recently produced γ allotrope of 2D phosphorus carbide (γ-PC) is conducted. The defects, such as antisites, single C or P, and double C and P and C and C vacancies, are found to be stable in γ-PC, while the Stone-Wales defect is not presented in γ-PC due to its transition-metal dichalcogenides-like structure. The formation energies, stability, and surface density of the considered defect species as well as their influence on the electronic structure of γ-PC is systematically identified. The formation of point defects in γ-PC is found to be less energetically favorable than in graphene, phosphorene, and MoS₂. Meanwhile, defects can significantly modulate the electronic structure of γ-PC by inducing hole/electron doping. The predicted scanning tunneling microscopy images suggest that most of the point defects are easy to distinguish from each other and that they can be easily recognized in experiments.

Carbon phosphide nanosheets and nanoribbons: insights on modulating their electronic properties by first principles calculations

A carbon phosphide (CP) monolayer, a 2D structure derived from the same 3-fold coordination found both in graphene and phosphorene, has been successfully synthesized in an experiment recently. In this paper, we investigated the modulation of electronic structures and transport characteristics of 2D nanosheets and quasi-1D nanoribbons of CP nanomaterials in the α-phase by using first-principles density functional theory simulation. The calculated band structures show that the band gap of 2D CP nanosheets progressively increases as the uniform biaxial strain changes from compression to stretching. However, the biaxial strain cannot change the indirect band gap behavior of the original 2D CP nanosheet. In addition, the band structures of quasi-1D nanoribbons with different styles of H-passivated zigzag edges have also been studied. The results show that the H-passivated zigzag PC ribbons with two P edges are semiconductors with indirect band gaps, and the gaps decrease with increasing width of ribbons. However, the H-passivated CP nanoribbons with one P-atom terminated edge in combination with one P-atom edge, and H-passivated CC nanoribbons with two C-atom terminated edges display metallic behaviors. The semi-conductive or metallic behaviors of zigzag CP nanoribbons can be explained by presenting the wave function of their energy band around the Fermi level. Finally, the electronic transport properties of different CP nanoribbon based nanojunctions are studied in which arise the interesting negative differential resistance or rectification effects in their current-voltage characteristic curves.

Transition metal-N4 embedded black phosphorus carbide as a high-performance bifunctional electrocatalyst for ORR/OER

Designing highly active electrocatalysts for oxygen reduction reaction (ORR) and oxygen evolution reaction (OER) is an important challenge in energy conversion and storage technology. In this work, based on computational screening over doping of 23 kinds of transition metals (TMs), we use first-principles study to explore the ORR and OER activity of TM-N₄ embedded black phosphorus carbide monolayer (b-PC). The results show that its catalytic performance highly depends on the number of electrons in the d orbital and the number of valence electrons of introduced TM atom. Moreover, we found that Co-N₄-bPC (η_ORR = 0.31 V; η_OER = 0.22 V), Rh-N₄-bPC (η_ORR = 0.33 V; η_OER = 0.62 V), and Ir-N₄-bPC (η_ORR = 0.21 V; η_OER = 0.21 V) can be promising candidates as bifunctional catalysts for both the ORR and OER and can be comparable or superior to TM-N₄-graphene in terms of overpotential. They experience no structural distortion at 500 K. Moreover, the exfoliation energy of b-PC is lower than that of graphene, and these three promising candidates show much lower formation energy than TM-N₄-graphene. Our study provides a systematical method for designing and developing high performance 2D material-based single atom catalysts (SACs) beyond graphene.

Monolayer PC5/PC6: promising anode materials for lithium-ion batteries

Employing two-dimensional (2D) materials as anodes for lithium-ion batteries (LIBs) is believed to be an effective approach to meet the growing demands of high-capacity next-generation LIBs. In this work, the first-principles density functional theory (DFT) calculations are employed to evaluate the potential application of two-dimensional phosphorus carbide (2D PC_x, x = 2, 5, and 6) monolayers as anode materials for lithium-ion batteries. The 2D PC_x systems are predicted to show outstanding structural stability and electronic properties. From the nudged elastic band calculations, the single Li atom shows extreme high diffusivities on the PC_x monolayer with low energy barriers of 0.18 eV for PC₂, 0.47 eV for PC₅, and 0.44 eV for PC₆. We further demonstrate that the theoretical specific capacity of monolayer PC₅ and PC₆ can reach up to 1251.7 and 1235.9 mA h g^-1, respectively, several times that of a graphite anode used in commercial LIBs. These results suggest that both PC₅ and PC₆ monolayers are promising anode materials for LIBs. Our work opens a new avenue to explore novel 2D materials in energy applications, where phosphorus carbides could be used as high-performance anode in LIBs.

2D materials beyond graphene toward Si integrated infrared optoelectronic devices

Since the discovery of graphene in 2004, it has become a worldwide hot topic due to its fascinating properties. However, the zero band gap and weak light absorption of graphene strictly restrict its applications in optoelectronic devices. In this regard, semiconducting two-dimensional (2D) materials are thought to be promising candidates for next-generation optoelectronic devices. Infrared (IR) light has gained intensive attention due to its vast applications, including night vision, remote sensing, target acquisition, optical communication, etc. Consequently, the generation, modulation, and detection of IR light are crucial for practical applications. Due to the van der Waals interaction between 2D materials and Si, the lattice mismatch of 2D materials and Si can be neglected; consequently, the integration process can be achieved easily. Herein, we review the recent progress of semiconducting 2D materials in IR optoelectronic devices. Firstly, we introduce the background and motivation of the review. Then, the suitable materials for IR applications are presented, followed by a comprehensive review of the applications of 2D materials in light emitting devices, optical modulators, and photodetectors. Finally, the problems encountered and further developments are summarized. We believe that milestone investigations of IR optoelectronics based on 2D materials beyond graphene will emerge soon, which will bring about great industrial revelations in 2D material-based integrated nanodevice commercialization.

The interaction of two-dimensional α- and β-phosphorus carbide with environmental molecules: a DFT study

The recently fabricated two-dimensional phosphorus carbide (PC) has been proposed for application in different nanodevices such as nanoantennas and field-effect transistors. However, the effect of ambient molecules on the properties of PC and, hence, the productivity of PC-based devices is still unknown. Herein a first-principles investigation is performed to study the most structurally stable α- and β-PC allotropes upon their interaction with environmental molecules, including NH₃, NO, NO₂, H₂O, and O₂. It is predicted that NH₃, H₂O, and O₂ are physisorbed on α- and β-PC while NO and NO₂ may easily form a covalent bond with the PC. Importantly, NO and NO₂ possess low adsorption energies on PC which compared to these on graphene and phosphorene. Moreover, both molecules are strong acceptors to PC with a giant charge transfer of ∼1 e per molecule. For all the considered molecules PC is found to be more sensitive compared to graphene and phosphorene. The present work provides useful insight into the effects of environmental molecules on the structure and electronic properties of α- and β-PC, which may be important for their manufacturing, storage, and application in gas sensors and electronic devices.

Two-dimensional few-layered PC3 as a promising photocatalyst for overall water splitting

Recently, 2D carbon phosphides (PCs) have attracted much attention due to their superior electronic and photovoltaic properties suitable for potential applications in field effect transistors and photodetectors. In this work, we systematically investigate the stability, electronic properties, optical absorption and photocatalytic water splitting performance of few-layered PC3 by using the first principles calculation method. Numerical results indicate that both monolayered and bilayered PC3 can serve as efficient photocatalysts for overall water splitting due to their high stability, moderate band gaps, suitable band edge positions, anisotropic high carrier mobilities and strong capacity of solar absorption. Compared with monolayered PC3, bilayered PC3 displays higher carrier mobilities (2500-23 000 cm2 V-1 s-1) and a wider optical absorption spectrum. Moreover, by applying an in-plane biaxial strain, the utilization of solar energy and the pH range suitable for overall water splitting can be improved effectively for both monolayered and bilayered PC3. Our work reliably expands the potential application of 2D few-layered PC3 in the field of nano-electronics and nano-optoelectronics.

Promoting Energy Efficiency via a Self-Adaptive Evaporative Cooling Hydrogel

High temperature brings adverse impacts on the energy efficiency, and even destroys a semiconductor device. Here, a novel and cost-effective strategy is proposed to boost the energy efficiency of semiconductor devices by using the self-adaptive evaporative cooling of a lithium- and bromine-enriched polyacrylamide hydrogel. Water inside the hydrogel can quickly evaporate to dissipate the waste heat generated by the nugatory carrier transport in the P-N junction. In dormancy, the hydrogel harvests water molecules from the surrounding air to regenerate itself. The hydrogel is demonstrated to low down the operating temperature of a commercial polycrystalline silicon solar cell by 17 °C under one sun condition and enhances its efficiency from 14.5% to 15.5%. It is also capable of increasing the maximum power of a simulated chip by 45% at a fixed operating temperature. The hydrogel is expected to be widely adopted in current semiconductor industry to improve its energy efficiency.

Anisotropic protein diffusion on nanosurface

The unique puckered structure of α-phase phosphorene carbide (α-PC) results in anisotropic electronic and thermal transporting properties. In the present work, the interactions between a model protein, villin headpiece sub-domain (HP35), and the surface of α-PC and monolayer black phosphorus (MBP, another puckered nanostructure) were explored by molecular dynamic (MD) simulations. It is found that HP35 diffuses quickly only along the zigzag direction of the α-PC surface. On the MBP surface, HP35 migrates mainly along the zigzag direction but can also easily stride over the ridges and grooves along the armchair direction. Moreover, the mild binding strength between α-PC and HP35 does not cause distortion in the protein structure. The intrinsic biocompatibility of α-PC, which is distinct from several other widely studied nanomaterials, such as carbon nanotubes, graphene and MoS2, makes it a promising candidate in functional biomedical applications.

Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators

Recently, piezoelectric characteristics have been a research focus for 2D materials because of their broad potential applications. Black phosphorus (BP) is a monoelemental 2D material predicted to be piezoelectric because of its highly directional properties and non-centrosymmetric lattice structure. However, piezoelectricity is hardly reported in monoelemental materials owing to their lack of ionic polarization, but piezoelectric generation is consistent with the non-centrosymmetric structure of BP. Theoretical calculations of phosphorene have explained the origin of piezoelectric polarization among P atoms. However, the disappearance of piezoelectricity in multilayer 2D material generally arises from the opposite orientations of adjacent atomic layers, whereas this effect is limited in BP lattices due to their spring-shaped space structure. Here, the existence of in-plane piezoelectricity is experimentally reported for multilayer BP along the armchair direction. Current-voltage measurements demonstrate a piezotronic effect in this orientation, and cyclic compression and release of BP flakes show an intrinsic current output as large as 4 pA under a compressive strain of -0.72%. The discovery of piezoelectricity in multilayer BP can lead to further understanding of this mechanism in monoelemental materials.

Far-infrared photodetectors based on graphene/black-AsP heterostructures

We develop the device models for the far-infrared interband photodetectors (IPs) with the graphene-layer (GL) sensitive elements and the black Phosphorus (b-P) or black-Arsenic (b-As) barrier layers (BLs). These far-infrared GL/BL-based IPs (GBIPs) can operate at the photon energies ℏ Ω smaller than the energy gap, Δ_G, of the b-P or b-As or their compounds, namely, at ℏ Ω≲2Δ _G/3 corresponding to the wavelength range λ≳(6-12) μm. The GBIP operation spectrum can be shifted to the terahertz range by increasing the bias voltage. The BLs made of the compounds b-As_xB_1-x with different x, enable the GBIPs with desirable spectral characteristics. The GL doping level substantially affects the GBIP characteristics and is important for their optimization. A remarkable feature of the GBIPs under consideration is a substantial (over an order of magnitude) lowering of the dark current due to a partial suppression of the dark-current gain accompanied by a fairly high photoconductive gain. Due to a large absorption coefficient and photoconductive gain, the GBIPs can exhibit large values of the internal responsivity and dark-current-limited detectivity exceeding those of the quantum-well and quantum-dot IPs using the intersubband transitions. The GBIPs with the b-P and b-As BLs can operate at longer radiation wavelengths than the infrared GL-based IPs comprising the BLs made of other van der Waals materials and can also compete with all kinds of the far-infrared photodetectors.

Two-Dimensional Pnictogen for Field-Effect Transistors

Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.

Mild lipid extraction and anisotropic cell membrane penetration of α-phase phosphorene carbide nanoribbons by molecular dynamics simulation studies

α-PC penetrates the interior of membrane efficiently only along its zigzag direction rather than its armchair direction.

The first-principles study of the adsorption of NH3, NO, and NO2 gas molecules on InSe-like phosphorus carbide

Novel γ-PC is a promising reversible material for room-temperature gas sensors.

Improvement in the quality of black phosphorus by selecting a mineralizer

The low-cost synthesis of high-quality black phosphorus (BP) has always been a challenge. Herein, we selected different mineralizers to synthesize high-crystallinity BP by the chemical vapor transport (CVT) method and demonstrated that the use of Pb instead of Sn can lead to higher purity BP. Residual Sn in Sn-BP was confirmed by X-ray photoelectron spectroscopy (XPS), but no mineralizer impurity was observed in Pb-BP. The performance of FET devices showed that the hole mobility of Pb-BP was significantly higher than that of Sn-BP. On the other hand, the Pb-BP devices exhibited good bipolarity with the highest hole mobility of 523 cm² V^-1 s^-1 at room temperature and electron mobility of up to 28 cm² V^-1 s^-1.