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Jaroch T, Żurawek-Wyczesany L, Stȩpniak-Dybala A, Krawiec M, Kopciuszyński M, Dróżdż P, Gołȩbiowski M, Zdyb R. Epitaxial Growth of Large-Scale α-Phase Antimonene. NANO LETTERS 2024. [PMID: 39316634 DOI: 10.1021/acs.nanolett.4c03277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/26/2024]
Abstract
Two-dimensional materials composed of elements from the 15th group of the periodic table remain largely unexplored. The primary challenge in advancing this research is the lack of large-scale layers that would facilitate extensive studies using laterally averaging techniques and enable functionalization for the fabrication of novel electronic, optoelectronic, and spintronic devices. In this report, we present a method for synthesizing large-scale antimonene layers, on the order of cm2. By employing molecular beam epitaxy, we successfully grow a monolayer film of α-phase antimonene on a W(110) surface passivated with a single-atom-thick layer of Sb atoms. The formation of α phase antimonene is confirmed through scanning tunneling microscopy and low-energy electron diffraction measurements. The isolated nature of the α-phase is further evidenced in the electronic structure, with linearly dispersed bands observed through angle-resolved photoelectron spectroscopy and supported by ab initio calculations.
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Affiliation(s)
- Tomasz Jaroch
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | | | | | - Mariusz Krawiec
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Marek Kopciuszyński
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Piotr Dróżdż
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Mariusz Gołȩbiowski
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Ryszard Zdyb
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
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2
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Gao W, Zhi G, Zhou M, Niu T. Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311317. [PMID: 38712469 DOI: 10.1002/smll.202311317] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2023] [Revised: 03/14/2024] [Indexed: 05/08/2024]
Abstract
The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.
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Affiliation(s)
- Wenjin Gao
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | | | - Miao Zhou
- Tianmushan Laboratory, Hangzhou, 310023, China
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
- School of Physics, Beihang University, Beijing, 100191, China
| | - Tianchao Niu
- Hangzhou International Innovation Institute, Beihang University, Hangzhou, 311115, China
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3
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Stȩpniak-Dybala A, Jaroch T, Krawiec M, Dróżdż P, Gołȩbiowski M, Zdyb R. Peculiar Structural Phase of a Single-Atom-Thick Layer of Antimony. NANO LETTERS 2023; 23:9894-9899. [PMID: 37861984 PMCID: PMC10636807 DOI: 10.1021/acs.nanolett.3c02847] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Revised: 10/09/2023] [Indexed: 10/21/2023]
Abstract
Using molecular beam epitaxy, a new structural phase of a single atom thick antimony layer has been synthesized on the W(110) surface. Scanning tunneling microscopy measurements reveal an atomically resolved structure with a perfectly flat surface and unusually large unit cell. The structure forms a well-ordered continuous film with a lateral size in the range of several millimeters, as revealed by low energy electron microscopy and diffraction experiments. The results of density functional theory calculations confirm the formation of a new phase of single-atom-thick antimony film without the buckling characteristic for the known phases of antimonene. The presented results demonstrate a substrate-tuned approach in the preparation of new structural phases of 2D materials.
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Affiliation(s)
| | - Tomasz Jaroch
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Mariusz Krawiec
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Piotr Dróżdż
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Mariusz Gołȩbiowski
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
| | - Ryszard Zdyb
- Institute of Physics, Maria Curie-Sklodowska University, 20-031 Lublin, Poland
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4
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Lin YC, Torsi R, Younas R, Hinkle CL, Rigosi AF, Hill HM, Zhang K, Huang S, Shuck CE, Chen C, Lin YH, Maldonado-Lopez D, Mendoza-Cortes JL, Ferrier J, Kar S, Nayir N, Rajabpour S, van Duin ACT, Liu X, Jariwala D, Jiang J, Shi J, Mortelmans W, Jaramillo R, Lopes JMJ, Engel-Herbert R, Trofe A, Ignatova T, Lee SH, Mao Z, Damian L, Wang Y, Steves MA, Knappenberger KL, Wang Z, Law S, Bepete G, Zhou D, Lin JX, Scheurer MS, Li J, Wang P, Yu G, Wu S, Akinwande D, Redwing JM, Terrones M, Robinson JA. Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications. ACS NANO 2023; 17:9694-9747. [PMID: 37219929 PMCID: PMC10324635 DOI: 10.1021/acsnano.2c12759] [Citation(s) in RCA: 16] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
Two-dimensional (2D) material research is rapidly evolving to broaden the spectrum of emergent 2D systems. Here, we review recent advances in the theory, synthesis, characterization, device, and quantum physics of 2D materials and their heterostructures. First, we shed insight into modeling of defects and intercalants, focusing on their formation pathways and strategic functionalities. We also review machine learning for synthesis and sensing applications of 2D materials. In addition, we highlight important development in the synthesis, processing, and characterization of various 2D materials (e.g., MXnenes, magnetic compounds, epitaxial layers, low-symmetry crystals, etc.) and discuss oxidation and strain gradient engineering in 2D materials. Next, we discuss the optical and phonon properties of 2D materials controlled by material inhomogeneity and give examples of multidimensional imaging and biosensing equipped with machine learning analysis based on 2D platforms. We then provide updates on mix-dimensional heterostructures using 2D building blocks for next-generation logic/memory devices and the quantum anomalous Hall devices of high-quality magnetic topological insulators, followed by advances in small twist-angle homojunctions and their exciting quantum transport. Finally, we provide the perspectives and future work on several topics mentioned in this review.
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Affiliation(s)
- Yu-Chuan Lin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Riccardo Torsi
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Rehan Younas
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Christopher L Hinkle
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Albert F Rigosi
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Heather M Hill
- National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Kunyan Zhang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Christopher E Shuck
- A.J. Drexel Nanomaterials Institute and Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, United States
| | - Chen Chen
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Hsiu Lin
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Daniel Maldonado-Lopez
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - Jose L Mendoza-Cortes
- Department of Chemical Engineering & Materials Science, Michigan State University, East Lansing, Michigan 48824, United States
| | - John Ferrier
- Department of Physics and Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Swastik Kar
- Department of Physics and Chemical Engineering, Northeastern University, Boston, Massachusetts 02115, United States
| | - Nadire Nayir
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, Karamanoglu Mehmet University, Karaman 70100, Turkey
| | - Siavash Rajabpour
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Adri C T van Duin
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Xiwen Liu
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Jie Jiang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Jian Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, United States
| | - Wouter Mortelmans
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
| | - Rafael Jaramillo
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02142, United States
| | - Joao Marcelo J Lopes
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplaz 5-7, 10117 Berlin, Germany
| | - Roman Engel-Herbert
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplaz 5-7, 10117 Berlin, Germany
| | - Anthony Trofe
- Department of Nanoscience, Joint School of Nanoscience & Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States
| | - Tetyana Ignatova
- Department of Nanoscience, Joint School of Nanoscience & Nanoengineering, University of North Carolina at Greensboro, Greensboro, North Carolina 27401, United States
| | - Seng Huat Lee
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhiqiang Mao
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Leticia Damian
- Department of Physics, University of North Texas, Denton, Texas 76203, United States
| | - Yuanxi Wang
- Department of Physics, University of North Texas, Denton, Texas 76203, United States
| | - Megan A Steves
- Institute for Quantitative Biosciences, University of California Berkeley, Berkeley, California 94720, United States
| | - Kenneth L Knappenberger
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Zhengtianye Wang
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - Stephanie Law
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Materials Science and Engineering, University of Delaware, Newark, Delaware 19716, United States
| | - George Bepete
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Da Zhou
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Jiang-Xiazi Lin
- Department of Physics, Brown University, Providence, Rhode Island 02906, United States
| | - Mathias S Scheurer
- Institute for Theoretical Physics, University of Innsbruck, Innsbruck A-6020, Austria
| | - Jia Li
- Department of Physics, Brown University, Providence, Rhode Island 02906, United States
| | - Pengjie Wang
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
| | - Guo Yu
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
- Department of Electrical and Computer Engineering, Princeton University, Princeton, New Jersey 08540, United States
| | - Sanfeng Wu
- Department of Physics, Princeton University, Princeton, New Jersey 08540, United States
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
- Microelectronics Research Center, The University of Texas, Austin, Texas 78758, United States
| | - Joan M Redwing
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Mauricio Terrones
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Research Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, Nagano 380-8553, Japan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Two-Dimensional Crystal Consortium, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
- Center for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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5
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Quan W, Hong C, Pan S, Hu J, Wu Q, Zhang Z, Zhou F, Zheng F, Zhu Z, Zhang Y. Rectangular-Phase Tellurene on Ni(111) from Monolayer Films to Periodic Striped Patterns. ACS APPLIED MATERIALS & INTERFACES 2023; 15:16144-16152. [PMID: 36929818 DOI: 10.1021/acsami.2c20400] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
As an emerging member of monoelemental two-dimensional (2D) materials, 2D tellurium (tellurene) has recently attracted intensive attention due to its polymorphism arising from the multivalent nature and fascinating properties such as wide-range band gaps, high carrier mobilities, etc. Herein, we predict the formation of a rectangular-phase tellurene on Ni(111) by first-principles density functional theory (DFT) calculations and realize its direct syntheses and characterizations by molecular beam epitaxy (MBE) and scanning tunneling microscopy (STM). We reveal that the monolayer rectangular tellurene and underlying Ni(111) substrate are strongly coupled, along with good lattice registry along two mutually perpendicular directions, which serves as the key driving force for the tellurene formation. We also uncover the unique morphological transitions of Te/Ni(111) from rectangular tellurene monolayer, to uniform periodic striped patterns at the second layer, and then to thick striped patterns. This work should offer valuable insights for the substrate-mediated syntheses of monoelemental 2D materials, thus propelling their phase engineering and intriguing property explorations.
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Affiliation(s)
- Wenzhi Quan
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Can Hong
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Shuangyuan Pan
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Jingyi Hu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Qilong Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Zehui Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Fan Zhou
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
| | - Feipeng Zheng
- Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou 510632, People's Republic of China
| | - Zhili Zhu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, People's Republic of China
| | - Yanfeng Zhang
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People's Republic of China
- School of Materials Science and Engineering, Peking University, Beijing 100871, People's Republic of China
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6
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Lu N, Hu X, Jiang J, Guo H, Zuo GZ, Zhuo Z, Wu X, Zeng XC. Highly anisotropic and ultra-diffusive vacancies in α-antimonene. NANOSCALE 2023; 15:4821-4829. [PMID: 36794788 DOI: 10.1039/d3nr00194f] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
α-Antimonene has recently been successfully fabricated in experiment; hence, it is timely to examine how various types of point defects in α-antimonene can affect its novel electronic properties. Herein, we present a comprehensive investigation of a total of nine possible types of point defects in α-antimonene via first-principles calculations. Particular attention is placed on the structural stability of the point defects and the effects of point defects on the electronic properties of α-antimonene. Compared with its structural analogs, such as phosphorene, graphene, and silicene, we find that most defects in α-antimonene can be more easily generated, and that among the nine types of point defects, the single vacancy SV-(5|9) is likely the most stable one while its presence can be orders of magnitude higher in concentration than that in phosphorene. Moreover, we find that the vacancy exhibits anisotropic and low diffusion barriers, of merely 0.10/0.30 eV in the zigzag/armchair direction. Notably, at room temperature, the migration of SV-(5|9) in the zigzag direction of α-antimonene is estimated to be three orders faster than that along the armchair direction, and also three orders faster than that of phosphorene in the same direction. Overall, the point defects in α-antimonene can significantly affect the electronic properties of the host two-dimensional (2D) semiconductor and thus the light absorption capability. The anisotropic, ultra-diffusive, and charge tunable single vacancies, along with the high oxidation resistance, render the α-antimonene sheet a unique 2D semiconductor (beyond the phosphorene) for developing vacancy-enabled nanoelectronics.
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Affiliation(s)
- Ning Lu
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids Ministry of Education, Anhui Laboratory of Molecule-Based Materials, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Xin Hu
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids Ministry of Education, Anhui Laboratory of Molecule-Based Materials, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Jiaxin Jiang
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids Ministry of Education, Anhui Laboratory of Molecule-Based Materials, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Hongyan Guo
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids Ministry of Education, Anhui Laboratory of Molecule-Based Materials, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Gui Zhong Zuo
- Institute of Plasma Physics, HIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Zhiwen Zhuo
- Anhui Province Key Laboratory of Optoelectric Materials Science and Technology, Key Laboratory of Functional Molecular Solids Ministry of Education, Anhui Laboratory of Molecule-Based Materials, and Department of Physics, Anhui Normal University, Wuhu, Anhui, 241000, China.
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, and School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiao Cheng Zeng
- Department of Materials Science & Engineering, City University of Hong Kong, Kowloon, 999077, Hong Kong.
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7
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Carrasco JA, Congost-Escoin P, Assebban M, Abellán G. Antimonene: a tuneable post-graphene material for advanced applications in optoelectronics, catalysis, energy and biomedicine. Chem Soc Rev 2023; 52:1288-1330. [PMID: 36744431 PMCID: PMC9987414 DOI: 10.1039/d2cs00570k] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Indexed: 02/07/2023]
Abstract
The post-graphene era is undoubtedly marked by two-dimensional (2D) materials such as quasi-van der Waals antimonene. This emerging material has a fascinating structure, exhibits a pronounced chemical reactivity (in contrast to graphene), possesses outstanding electronic properties and has been postulated for a plethora of applications. However, chemistry and physics of antimonene remain in their infancy, but fortunately recent discoveries have shed light on its unmatched allotropy and rich chemical reactivity offering a myriad of unprecedented possibilities in terms of fundamental studies and applications. Indeed, antimonene can be considered as one of the most appealing post-graphene 2D materials reported to date, since its structure, properties and applications can be chemically engineered from the ground up (both using top-down and bottom-up approaches), offering an unprecedented level of control in the realm of 2D materials. In this review, we provide an in-depth analysis of the recent advances in the synthesis, characterization and applications of antimonene. First, we start with a general introduction to antimonene, and then we focus on its general chemistry, physical properties, characterization and synthetic strategies. We then perform a comprehensive study on the allotropy, the phase transition mechanisms, the oxidation behaviour and chemical functionalization. From a technological point of view, we further discuss the applications recently reported for antimonene in the fields of optoelectronics, catalysis, energy storage, cancer therapy and sensing. Finally, important aspects such as new scalable methodologies or the promising perspectives in biomedicine are discussed, pinpointing antimonene as a cutting-edge material of broad interest for researchers working in chemistry, physics, materials science and biomedicine.
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Affiliation(s)
- Jose A Carrasco
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
| | - Pau Congost-Escoin
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
| | - Mhamed Assebban
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
| | - Gonzalo Abellán
- Instituto de Ciencia Molecular (ICMol), Universidad de Valencia, Catedrático José Beltrán Martínez, 2, 46980 Paterna, Spain.
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8
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Charge density, atomic bonding and band structure of two-dimensional Sn, Sb, and Pb semimetals. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.140124] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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9
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Alfieri A, Anantharaman SB, Zhang H, Jariwala D. Nanomaterials for Quantum Information Science and Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109621. [PMID: 35139247 DOI: 10.1002/adma.202109621] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Revised: 02/04/2022] [Indexed: 06/14/2023]
Abstract
Quantum information science and engineering (QISE)-which entails the use of quantum mechanical states for information processing, communications, and sensing-and the area of nanoscience and nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid-state devices for QISE have, to this point, predominantly been designed with bulk materials as their constituents. This review considers how nanomaterials (i.e., materials with intrinsic quantum confinement) may offer inherent advantages over conventional materials for QISE. The materials challenges for specific types of qubits, along with how emerging nanomaterials may overcome these challenges, are identified. Challenges for and progress toward nanomaterials-based quantum devices are condidered. The overall aim of the review is to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.
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Affiliation(s)
- Adam Alfieri
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Surendra B Anantharaman
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Huiqin Zhang
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
| | - Deep Jariwala
- Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA
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10
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Peng X, Zhang X, Dong X, Ma D, Chen D, Li Y, Li J, Han J, Wang Z, Liu CC, Zhou J, Xiao W, Yao Y. Observation of Topological Edge States on α-Bi 4Br 4 Nanowires Grown on TiSe 2 Substrates. J Phys Chem Lett 2021; 12:10465-10471. [PMID: 34672593 DOI: 10.1021/acs.jpclett.1c02586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A time-reversal invariant two-dimensional (2D) topological insulator (TI) is characterized by the gapless helical edge states propagating along the perimeter of the system. However, the small band gap in the 2D TIs discovered so far hinders their applications. Recently, we predicted that single-layer Bi4Br4 is a 2D TI with a remarkable band gap and that α-Bi4Br4 crystals can host topological edge states at the step edges. Here we report the growth of α-Bi4Br4 nanowires with (102)-oriented top surfaces on the TiSe2 substrates and the direct observation of the predicted topological edge states at the step edges of the nanowires using scanning tunneling microscopy. The coupling between the edge states leads to the formation of surface states at the (102) top surfaces of the nanowires. Our work demonstrates the existence of topological edge states in α-Bi4Br4 and paves the way for developing α-Bi4Br4-based devices for a high-temperature quantum spin Hall effect.
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Affiliation(s)
- Xianglin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Dong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dashuai Ma
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dongyun Chen
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yongkai Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Ji Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Junfeng Han
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Cheng-Cheng Liu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Jinjian Zhou
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Wende Xiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
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11
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Hess P. Bonding, structure, and mechanical stability of 2D materials: the predictive power of the periodic table. NANOSCALE HORIZONS 2021; 6:856-892. [PMID: 34494064 DOI: 10.1039/d1nh00113b] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
This tutorial review describes the ongoing effort to convert main-group elements of the periodic table and their combinations into stable 2D materials, which is sometimes called modern 'alchemy'. Theory is successfully approaching this goal, whereas experimental verification is lagging far behind in the synergistic interplay between theory and experiment. The data collected here gives a clear picture of the bonding, structure, and mechanical performance of the main-group elements and their binary compounds. This ranges from group II elements, with two valence electrons, to group VI elements with six valence electrons, which form not only 1D structures but also, owing to their variable oxidation states, low-symmetry 2D networks. Outside of these main groups reviewed here, predominantly ionic bonding may be observed, for example in group II-VII compounds. Besides high-symmetry graphene with its shortest and strongest bonds and outstanding mechanical properties, low-symmetry 2D structures such as various borophene and tellurene phases with intriguing properties are receiving increasing attention. The comprehensive discussion of data also includes bonding and structure of few-layer assemblies, because the electronic properties, e.g., the band gap, of these heterostructures vary with interlayer layer separation and interaction energy. The available data allows the identification of general relationships between bonding, structure, and mechanical stability. This enables the extraction of periodic trends and fundamental rules governing the 2D world, which help to clear up deviating results and to estimate unknown properties. For example, the observed change of the bond length by a factor of two alters the cohesive energy by a factor of four and the extremely sensitive Young's modulus and ultimate strength by more than a factor of 60. Since the stiffness and strength decrease with increasing atom size on going down the columns of the periodic table, it is important to look for suitable allotropes of elements and binaries in the upper rows of the periodic table when mechanical stability and robustness are issues. On the other hand, the heavy compounds are of particular interest because of their low-symmetry structures with exotic electronic properties.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, INF 253, University of Heidelberg, 69120 Heidelberg, Germany.
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12
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Yuan Q, Zheng F, Shi Z, Li Q, Lv Y, Chen Y, Zhang P, Li S. Direct Growth of van der Waals Tin Diiodide Monolayers. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2100009. [PMID: 34398529 PMCID: PMC8529434 DOI: 10.1002/advs.202100009] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2021] [Revised: 07/02/2021] [Indexed: 05/21/2023]
Abstract
Two-dimensional (2D) van der Waals (vdW) materials have garnered considerable attention for their unique properties and potentials in a wide range of fields, which include nano-electronics/optoelectronics, solar energy, and catalysis. Meanwhile, challenges in the approaches toward achieving high-performance devices still inspire the search for new 2D vdW materials with precious properties. In this study, via molecular beam epitaxy, for the first time, the vdW SnI2 monolayer is successfully fabricated with a new structure. Scanning tunneling microscopy/spectroscopy characterization, as corroborated by the density functional theory calculation, indicates that this SnI2 monolayer exhibits a band gap of ≈2.9 eV in the visible purple range, and an indirect- to direct-band gap transition occurs in the SnI2 bilayer. This study provides a new semiconducting 2D material that is promising as a building block in future electronics/optoelectronics.
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Affiliation(s)
- Qian‐Qian Yuan
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- School of PhysicsNanjing UniversityNanjing210093China
| | - Fawei Zheng
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (MOE) and School of PhysicsBeijing Institute of TechnologyBeijing100081China
| | - Zhi‐Qiang Shi
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- School of PhysicsNanjing UniversityNanjing210093China
| | - Qi‐Yuan Li
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- School of PhysicsNanjing UniversityNanjing210093China
| | - Yang‐Yang Lv
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- Department of Materials Science and EngineeringNanjing UniversityNanjing210093China
| | - Yanbin Chen
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- School of PhysicsNanjing UniversityNanjing210093China
| | - Ping Zhang
- Institute of Physics and Computational MathematicsBeijing100088China
| | - Shao‐Chun Li
- National Laboratory of Solid State Microstructures and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing210093China
- School of PhysicsNanjing UniversityNanjing210093China
- Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing210093China
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13
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Lodge MS, Yang SA, Mukherjee S, Weber B. Atomically Thin Quantum Spin Hall Insulators. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008029. [PMID: 33893669 DOI: 10.1002/adma.202008029] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2020] [Revised: 01/12/2021] [Indexed: 06/12/2023]
Abstract
Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Among them is the quantum spin Hall (QSH) insulator-a 2D state of matter that arises from interplay of topological band inversion and strong spin-orbit coupling, with large tunable bulk bandgaps up to 800 meV and gapless, 1D edge states. Reviewing recent advances in materials science and engineering alongside theoretical description, the QSH materials library is surveyed with focus on the prospects for QSH-based device applications. In particular, theoretical predictions of nontrivial superconducting pairing in the QSH state toward Majorana-based topological quantum computing are discussed, which are the next frontier in QSH materials research.
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Affiliation(s)
- Michael S Lodge
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Shengyuan A Yang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore, 487372, Singapore
| | - Shantanu Mukherjee
- Department of Physics, Indian Institute of Technology Madras, Chennai, Tamil Nadu, 600036, India
- Quantum Centres in Diamond and Emergent Materials (QCenDiem)-Group, IIT Madras, Chennai, Tamil Nadu, 600036, India
- Computational Materials Science Group, IIT Madras, Chennai, Tamil Nadu, 600036, India
| | - Bent Weber
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- Australian Research Council (ARC) Centre of Excellence in Future Low-Energy Electronics Techonologies (FLEET), School of Physics, Monash University, Clayton, VIC, 3800, Australia
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14
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Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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15
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Zhou D, Li H, Bu S, Xin B, Jiang Y, Si N, Sun J, Ji Q, Huang H, Li H, Niu T. Phase Engineering of Epitaxial Stanene on a Surface Alloy. J Phys Chem Lett 2021; 12:211-217. [PMID: 33325714 DOI: 10.1021/acs.jpclett.0c03311] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Stanene is a notable two-dimensional topological insulator with a large spin-orbit-coupling-induced band gap. However, the formation of surface alloy intermediates during the epitaxial growth on noble metal substrates prevents the as-grown stanene from preserving its intrinsic electronic states. Here, we show that an intentionally prepared 3×3Au2Sn(111) alloy surface is a suitable inert substrate for growing stanene without the further formation of a complicated surface alloy by scanning tunneling microscopy. The Sn tetramer and clover-shaped Sn pentamer are intermediates for the black-phosphorene-like Sn film at a substrate temperature of <420 K, which transforms to a blue-phosphorene-like stanene with a lattice constant of 0.50 nm above 500 K. First-principles calculations reveal that the epitaxial Sn layer exhibits a lattice registry growth mode and holds a direct energy gap of ∼0.4 eV. Furthermore, interfacial charge-transfer-induced significant Rashba splitting in its electronic structure gives it great potential in spintronic applications.
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Affiliation(s)
- Dechun Zhou
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Heping Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Saiyu Bu
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Benwu Xin
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yixuan Jiang
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Nan Si
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Jiao Sun
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Qingmin Ji
- Herbert Gleiter Institute of Nanoscience, School of Material Science and Engineering, Nanjing University of Science & Technology, Nanjing 210094, China
| | - Han Huang
- Hunan Key Laboratory of Super-Microstructure and Ultrafast Process, College of Physics and Electronics, Central South University, Changsha 410083, China
| | - Hui Li
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Tianchao Niu
- School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
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16
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Shi ZQ, Li H, Yuan QQ, Xue CL, Xu YJ, Lv YY, Jia ZY, Chen Y, Zhu W, Li SC. Kinetics-Limited Two-Step Growth of van der Waals Puckered Honeycomb Sb Monolayer. ACS NANO 2020; 14:16755-16760. [PMID: 33258600 DOI: 10.1021/acsnano.0c04620] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Puckered honeycomb Sb monolayer, the structural analog of black phosphorene, has been recently successfully grown by means of molecular beam epitaxy. However, little is known to date about the growth mechanism for such a puckered honeycomb monolayer. In this study, by using scanning tunneling microscopy in combination with first-principles density functional theory calculations, we unveil that the puckered honeycomb Sb monolayer takes a kinetics-limited two-step growth mode. As the coverage of Sb increases, the Sb atoms first form the distorted hexagonal lattice as the half layer, and then the distorted hexagonal half-layer transforms into the puckered honeycomb lattice as the full layer. These results provide the atomic-scale insight in understanding the growth mechanism of puckered honeycomb monolayer and can be instructive to the direct growth of other monolayers with the same structure.
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Affiliation(s)
- Zhi-Qiang Shi
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Huiping Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qian-Qian Yuan
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yang-Yang Lv
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yanbin Chen
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics, Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China
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17
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Fortin-Deschênes M, Zschiesche H, Menteş TO, Locatelli A, Jacobberger RM, Genuzio F, Lagos MJ, Biswas D, Jozwiak C, Miwa JA, Ulstrup S, Bostwick A, Rotenberg E, Arnold MS, Botton GA, Moutanabbir O. Pnictogens Allotropy and Phase Transformation during van der Waals Growth. NANO LETTERS 2020; 20:8258-8266. [PMID: 33026227 DOI: 10.1021/acs.nanolett.0c03372] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
With their ns2 np3 valence electronic configuration, pnictogens are the only system to crystallize in layered van der Waals (vdW) and quasi-vdW structures throughout the group. Light pnictogens crystallize in the A17 phase, and bulk heavier elements prefer the A7 phase. Herein, we demonstrate that the A17 of heavy pnictogens can be stabilized in antimonene grown on weakly interacting surfaces and that it undergoes a spontaneous thickness-driven transformation to the stable A7 phase. At a critical thickness of ∼4 nm, A17 antimony transforms from AB- to AA-stacked α-antimonene by a diffusionless shuffle transition followed by a gradual relaxation to the A7 phase. Furthermore, the competition between A7- and A17-like bonding affects the electronic structure of the intermediate phase. These results highlight the critical role of the atomic structure and substrate-layer interactions in shaping the stability and properties of layered materials, thus enabling a new degree of freedom to engineer their performance.
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Affiliation(s)
- Matthieu Fortin-Deschênes
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec H3C 3A7, Canada
| | - Hannes Zschiesche
- Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L8, Canada
| | - Tevfik O Menteş
- Elettra Sincrotrone Trieste S.C.p.A, S.S. 14-km 163, 5 in AREA Science Park, 34149 Basovizza, Trieste, Italy
| | - Andrea Locatelli
- Elettra Sincrotrone Trieste S.C.p.A, S.S. 14-km 163, 5 in AREA Science Park, 34149 Basovizza, Trieste, Italy
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Francesca Genuzio
- Elettra Sincrotrone Trieste S.C.p.A, S.S. 14-km 163, 5 in AREA Science Park, 34149 Basovizza, Trieste, Italy
| | - Maureen J Lagos
- Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L8, Canada
| | - Deepnarayan Biswas
- Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Chris Jozwiak
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Jill A Miwa
- Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Søren Ulstrup
- Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, 8000 Aarhus C, Denmark
| | - Aaron Bostwick
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Eli Rotenberg
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Gianluigi A Botton
- Department of Materials Science and Engineering, McMaster University, Hamilton, Ontario L8S 4L8, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec H3C 3A7, Canada
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18
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Shi ZQ, Li H, Xue CL, Yuan QQ, Lv YY, Xu YJ, Jia ZY, Gao L, Chen Y, Zhu W, Li SC. Tuning the Electronic Structure of an α-Antimonene Monolayer through Interface Engineering. NANO LETTERS 2020; 20:8408-8414. [PMID: 33064495 DOI: 10.1021/acs.nanolett.0c03704] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The interfacial charge transfer from the substrate may influence the electronic structure of the epitaxial van der Waals (vdW) monolayers and, thus, their further technological applications. For instance, the freestanding Sb monolayer in the puckered honeycomb phase (α-antimonene), the structural analogue of black phosphorene, was predicted to be a semiconductor, but the epitaxial one behaves as a gapless semimetal when grown on the Td-WTe2 substrate. Here, we demonstrate that interface engineering can be applied to tune the interfacial charge transfer and, thus, the electron band of the epitaxial monolayer. As a result, the nearly freestanding (semiconducting) α-antimonene monolayer with a band gap of ∼170 meV was successfully obtained on the SnSe substrate. Furthermore, a semiconductor-semimetal crossover is observed in the bilayer α-antimonene. This study paves the way toward modifying the electron structure in two-dimensional vdW materials through interface engineering.
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Affiliation(s)
- Zhi-Qiang Shi
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Huiping Li
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Cheng-Long Xue
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Qian-Qian Yuan
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Yang-Yang Lv
- National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yong-Jie Xu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Zhen-Yu Jia
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanbin Chen
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Key Laboratory of Strongly-Coupled Quantum Matter Physics Chinese Academy of Sciences, School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Shao-Chun Li
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Jiangsu Provincial Key Laboratory for Nanotechnology, Nanjing University, Nanjing 210093, China
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19
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Luo Y, Zhao G, Wang S. The electron-phonon scattering and carrier mobility in monolayer AsSb. Phys Chem Chem Phys 2020; 22:5688-5692. [PMID: 32103226 DOI: 10.1039/c9cp06945c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/21/2023]
Abstract
Through first-principles calculations, the electron-phonon scattering of two-dimensional monolayer AsSb is investigated. The Boltzmann transport equation is used to compute the phonon limited carrier mobility. We find that the optical phonon scattering rates are much larger than acoustic ones around the valence band maximum (VBM) and the conduction band minimum (CBM). The phonon-decomposed scattering results show that transverse optical (TO) phonon modes dominate the scattering around VBM, while longitudinal and out-of-plane acoustic modes contribute mostly to the scattering at higher energy. TO phonon modes dominate the scattering for electrons over all energy level, and the electron-phonon matrix element analysis verified the results. Finally, we observed that the largest mean free paths for hot holes and hot electrons are 20 nm and 8 nm, respectively. That is the best range to extract the hot holes and hot electrons. More interestingly, owing to the in-pane net dipole moment of AsSb, the intrinsic electron/hole mobility of AsSb are 38/50 cm2 V-1 s-1, which are less than monolayer arsenene and antimonene.
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Affiliation(s)
- Ying Luo
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
| | - Guojun Zhao
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
| | - Shudong Wang
- School of Physical Science and Technology, Inner Mongolia University, Hohhot, 010021, China.
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20
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Hess P. Thickness of elemental and binary single atomic monolayers. NANOSCALE HORIZONS 2020; 5:385-399. [PMID: 32118242 DOI: 10.1039/c9nh00658c] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The thickness of monolayers is a fundamental property of two-dimensional (2D) materials that has not found the necessary attention. It plays a crucial role in their mechanical behavior, the determination of related physical properties such as heat transfer, and especially the properties of multilayer systems. Measurements of the thickness of free-standing monolayers are widely lacking and notoriously too large. Consistent thicknesses have been reported for single layers of graphene, boronitrene, and SiC derived from interlayer spacing measured by X-ray diffraction in multilayer systems, first-principles calculations of the interlayer spacing, and tabulated van der Waals (vdW) diameters. Furthermore, the electron density-based volume model agrees with the geometric slab model for graphene and boronitrene. For other single-atom monolayers DFT calculations and molecular dynamics (MD) simulations deliver interlayer distances that are often much smaller than the vdW diameter, owing to further electrostatic and (weak) covalent interlayer interaction. Monolayers strongly bonded to a surface also show this effect. If only weak vdW forces exist, the vdW diameter delivers a reasonable thickness not only for free-standing monolayers but also for few-layer systems and adsorbed monolayers. Adding the usually known corrugation effect of buckled or puckered monolayers to the vdW diameter delivers an upper limit of the monolayer thickness. The study presents a reference database of thickness values for elemental and binary group-IV and group-V monolayers, as well as binary III-V and IV-VI compounds.
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Affiliation(s)
- Peter Hess
- Institute of Physical Chemistry, University of Heidelberg, Im Neuenheimer Feld 253, D-69120 Heidelberg, Germany.
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21
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Direct Growth of Antimonene on C-Plane Sapphire by Molecular Beam Epitaxy. APPLIED SCIENCES-BASEL 2020. [DOI: 10.3390/app10020639] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Monolayer antimony (antimonene) has been reported for its excellent properties, such as tuneable band gap, stability in the air, and high mobility. However, growing high quality, especially large-area antimonene, remains challenging. In this study, we report the direct growth of antimonene on c-plane sapphire substrate while using molecular beam epitaxy (MBE). We explore the effect of growth temperature on antimonene formation and present a growth phase diagram of antimony. The effect of antimony sources (Sb2 or Sb4) and a competing mechanism between the two-dimensional (2D) and three-dimensional (3D) growth processes and the effects of adsorption and cracking of the source molecules are also discussed. This work offers a new method for growing antimonene and it provides ideas for promoting van der Waals epitaxy.
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22
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Zhou W, Chen J, Bai P, Guo S, Zhang S, Song X, Tao L, Zeng H. Two-Dimensional Pnictogen for Field-Effect Transistors. RESEARCH 2020; 2019:1046329. [PMID: 31912022 PMCID: PMC6944228 DOI: 10.34133/2019/1046329] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2019] [Accepted: 09/07/2019] [Indexed: 11/06/2022]
Abstract
Two-dimensional (2D) layered materials hold great promise for various future electronic and optoelectronic devices that traditional semiconductors cannot afford. 2D pnictogen, group-VA atomic sheet (including phosphorene, arsenene, antimonene, and bismuthene) is believed to be a competitive candidate for next-generation logic devices. This is due to their intriguing physical and chemical properties, such as tunable midrange bandgap and controllable stability. Since the first black phosphorus field-effect transistor (FET) demo in 2014, there has been abundant exciting research advancement on the fundamental properties, preparation methods, and related electronic applications of 2D pnictogen. Herein, we review the recent progress in both material and device aspects of 2D pnictogen FETs. This includes a brief survey on the crystal structure, electronic properties and synthesis, or growth experiments. With more device orientation, this review emphasizes experimental fabrication, performance enhancing approaches, and configuration engineering of 2D pnictogen FETs. At the end, this review outlines current challenges and prospects for 2D pnictogen FETs as a potential platform for novel nanoelectronics.
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Affiliation(s)
- Wenhan Zhou
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Jiayi Chen
- Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Pengxiang Bai
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shiying Guo
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Xiufeng Song
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Li Tao
- Jiangsu Key Laboratory of Advanced Metallic Materials, School of Materials Science and Engineering, Southeast University, Nanjing 211189, China
| | - Haibo Zeng
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
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23
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Hogan C, Holtgrewe K, Ronci F, Colonna S, Sanna S, Moras P, Sheverdyaeva PM, Mahatha S, Papagno M, Aliev ZS, Babanly M, Chulkov EV, Carbone C, Flammini R. Temperature Driven Phase Transition at the Antimonene/Bi 2Se 3 van der Waals Heterostructure. ACS NANO 2019; 13:10481-10489. [PMID: 31469534 DOI: 10.1021/acsnano.9b04377] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report the discovery of a temperature-induced phase transition between the α and β structures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the β phase grows and prevails over the α phase, eventually forming a single domain that perfectly matches the surface lattice structure of bismuth selenide. First-principles thermodynamics calculations of this van der Waals heterostructure explain the different temperature-dependent stability of the two phases and reveal a minimum energy transition path. Although the formation energies of freestanding α- and β-antimonene only slightly differ, the β phase is ultimately favored in the annealed heterostructure due to an increased interaction with the substrate mediated by the perfect lattice match.
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Affiliation(s)
- Conor Hogan
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
- Dipartimento di Fisica , Università di Roma "Tor Vergata" , Via della Ricerca Scientifica 1 , 00133 Roma , Italy
| | - Kris Holtgrewe
- Institut für Theoretische Physik and Center for Materials Research , Justus-Liebig-Universität Gießen , Heinrich-Buff-Ring 16 , 35392 Gießen , Germany
| | - Fabio Ronci
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
| | - Stefano Colonna
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
| | - Simone Sanna
- Institut für Theoretische Physik and Center for Materials Research , Justus-Liebig-Universität Gießen , Heinrich-Buff-Ring 16 , 35392 Gießen , Germany
| | - Paolo Moras
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Polina M Sheverdyaeva
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Sanjoy Mahatha
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Marco Papagno
- Dipartimento di Fisica , Università della Calabria , Via P.Bucci , 87036 Arcavacata di Rende ( CS ), Italy
| | - Ziya S Aliev
- Azerbaijan State Oil and Industry University , AZ1010 Baku , Azerbaijan
| | - Mahammad Babanly
- Institute of Catalysis and Inorganic Chemistry , Azerbaijan National Academy of Science , AZ1143 Baku , Azerbaijan
| | - Evgeni V Chulkov
- Departamento de Física de Materiales, Facultad de Ciencias Químicas, UPV/EHU, and Centro de Física de Materiales, CFM-MPC, CSIC-UPV/EHU , Apdo. 1072, 20080 San Sebástian/Donostia , Basque Country , Spain
- Saint Petersburg State University , 198504 Saint Petersburg , Russia
- Donostia International Physics Center (DIPC) , P. de Manuel Lardizabal 4 , 20018 San Sebastián , Basque Country , Spain
| | - Carlo Carbone
- Istituto di Struttura della Materia-CNR (ISM-CNR) , S.S. 14, km 163.5 , I-34149 Trieste , Italy
| | - Roberto Flammini
- Istituto di Struttura della Materia-CNR (ISM-CNR) , Via del Fosso del Cavaliere , 00133 Roma , Italy
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24
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Guo S, Zhang Y, Ge Y, Zhang S, Zeng H, Zhang H. 2D V-V Binary Materials: Status and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902352. [PMID: 31368605 DOI: 10.1002/adma.201902352] [Citation(s) in RCA: 103] [Impact Index Per Article: 20.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2019] [Revised: 06/02/2019] [Indexed: 06/10/2023]
Abstract
2D phosphorene, arsenene, antimonene, and bismuthene, as a fast-growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group-VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V-V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V-V binary materials is given.
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Affiliation(s)
- Shiying Guo
- Key Laboratory of Advanced Display Materials and Devices, and Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Yupeng Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanqi Ge
- Institute of Microscale Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shengli Zhang
- Key Laboratory of Advanced Display Materials and Devices, and Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Haibo Zeng
- Key Laboratory of Advanced Display Materials and Devices, and Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, Shenzhen University, Shenzhen, 518060, P. R. China
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25
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Niu T, Zhou W, Zhou D, Hu X, Zhang S, Zhang K, Zhou M, Fuchs H, Zeng H. Modulating Epitaxial Atomic Structure of Antimonene through Interface Design. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1902606. [PMID: 31157463 DOI: 10.1002/adma.201902606] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2019] [Indexed: 06/09/2023]
Abstract
Antimonene, a new semiconductor with fundamental bandgap and desirable stability, has been experimentally realized recently. However, epitaxial growth of wafer-scale single-crystalline monolayer antimonene preserving its buckled configuration remains a daunting challenge. Here, Cu(111) and Cu(110) are chosen as the substrates to fabricate high-quality, single-crystalline antimonene via molecular beam epitaxy (MBE). Surface alloys form spontaneously after the deposition and postannealing of Sb on two substrates that show threefold and twofold symmetry with different lattice constants. Increasing the coverage leads to the epitaxial growth of two atomic types of antimonene, both exhibiting a hexagonal lattice but with significant difference in lattice constants, which are observed by scanning tunneling microscopy. Scanning tunneling spectroscopy measurements reveal the strain-induced tunable bandgap, in agreement with the first-principles calculations. The results show that epitaxial growth of antimonene on different substrates allow the electronic properties of these films to be tuned by substrate-induced strain and stress.
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Affiliation(s)
- Tianchao Niu
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Wenhan Zhou
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Dechun Zhou
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
| | - Xuemin Hu
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Shengli Zhang
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Kan Zhang
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing, 100191, China
| | - Harald Fuchs
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Herbert Gleiter Institute of Nanoscience, Nanjing University of Science & Technology, Nanjing, 210094, China
- Center for Nanotechnology (CeNTech), Westfälische Wilhelms-Universität Münster, Heisenbergstrasse 11, 48149, Münster, Germany
| | - Haibo Zeng
- College of Material Science and Engineering, Nanjing University of Science & Technology, No. 200, Xiaolingwei, 210094, China
- Key Laboratory of Advanced Display Materials and Devices, Ministry of Industry and Information Technology, College of Material Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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26
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Fortin-Deschênes M, Jacobberger RM, Deslauriers CA, Waller O, Bouthillier É, Arnold MS, Moutanabbir O. Dynamics of Antimonene-Graphene Van Der Waals Growth. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1900569. [PMID: 30968486 DOI: 10.1002/adma.201900569] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2019] [Revised: 03/05/2019] [Indexed: 06/09/2023]
Abstract
Van der Waals (vdW) heterostructures have recently been introduced as versatile building blocks for a variety of novel nanoscale and quantum technologies. Harnessing the unique properties of these heterostructures requires a deep understanding of the involved interfacial interactions and a meticulous control of the growth of 2D materials on weakly interacting surfaces. Although several epitaxial vdW heterostructures have been achieved experimentally, the mechanisms governing their synthesis are still nebulous. With this perspective, herein, the growth dynamics of antimonene on graphene are investigated in real time. In situ low-energy electron microscopy reveals that nucleation predominantly occurs on 3D nuclei followed by a self-limiting lateral growth with morphology sensitive to the deposition rate. Large 2D layers are observed at high deposition rates, whereas lower growth rates trigger an increased multilayer nucleation at the edges as they become aligned with the Z2 orientation leading to atoll-like islands with thicker, well-defined bands. This complexity of the vdW growth is elucidated based on the interplay between the growth rate, surface diffusion, and edges orientation. This understanding lays the groundwork for a better control of the growth of vdW heterostructures, which is critical to their large-scale integration.
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Affiliation(s)
- Matthieu Fortin-Deschênes
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Charles-Antoine Deslauriers
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Olga Waller
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Étienne Bouthillier
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, C. P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
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27
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Bo M, Li J, Yao C, Huang Z, Li L, Sun CQ, Peng C. Electronic structure of two-dimensional In and Bi metal on BN nanosheets. RSC Adv 2019; 9:9342-9347. [PMID: 35520743 PMCID: PMC9062056 DOI: 10.1039/c9ra00673g] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2019] [Accepted: 03/18/2019] [Indexed: 01/09/2023] Open
Abstract
The electronic structures of two-dimensional (2D) indium (In) and bismuth (Bi) metal on BN nanosheets are systematically studied using hybrid density functional theory (DFT). We found that 2D In and Bi metal effectively modulate the band gap of a BN nanosheet. We also found that the indirect band gap of the 2D In and Bi metal electronic structures are 0.70 and 0.09 eV, respectively. This modulation originates from the charge transfer between the 2D metal and BN nanosheet interfaces, as well as from the electron redistribution of the In/BN and Bi/BN heterojunctions of the s and p orbitals. Our results provide an insight into 2D In/BN and Bi/BN heterojunctions, which should be useful in the design of 2D In and Bi metal–semiconductor-based devices. The electronic structures of two-dimensional (2D) indium (In) and bismuth (Bi) metal on BN nanosheets are systematically studied using hybrid density functional theory (DFT).![]()
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Affiliation(s)
- Maolin Bo
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
| | - Jibiao Li
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
| | - Chuang Yao
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
| | - Zhongkai Huang
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
| | - Lei Li
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
| | - Chang Q. Sun
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
- NOVITAS
| | - Cheng Peng
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology (EBEAM) of Chongqing
- Yangtze Normal University
- Chongqing 408100
- China
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