1
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Zhou Y, Li S, Liang X, Zhou Y. Topological Spin Textures: Basic Physics and Devices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2312935. [PMID: 38861696 DOI: 10.1002/adma.202312935] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 05/24/2024] [Indexed: 06/13/2024]
Abstract
In the face of escalating modern data storage demands and the constraints of Moore's Law, exploring spintronic solutions, particularly the devices based on magnetic skyrmions, has emerged as a promising frontier in scientific research. Since the first experimental observation of skyrmions, topological spin textures have been extensively studied for their great potential as efficient information carriers in spintronic devices. However, significant challenges have emerged alongside this progress. This review aims to synthesize recent advances in skyrmion research while addressing the major issues encountered in the field. Additionally, current research on promising topological spin structures in addition to skyrmions is summarized. Beyond 2D structures, exploration also extends to 1D magnetic solitons and 3D spin textures. In addition, a diverse array of emerging magnetic materials is introduced, including antiferromagnets and 2D van der Waals magnets, broadening the scope of potential materials hosting topological spin textures. Through a systematic examination of magnetic principles, topological categorization, and the dynamics of spin textures, a comprehensive overview of experimental and theoretical advances in the research of topological magnetism is provided. Finally, both conventional and unconventional applications are summarized based on spin textures proposed thus far. This review provides an outlook on future development in applied spintronics.
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Affiliation(s)
- Yuqing Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Shuang Li
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Xue Liang
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
| | - Yan Zhou
- School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China
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2
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Yao S, Ji Y, Wang S, Liu Y, Hou Z, Wang J, Gao X, Fu W, Nie K, Xie J, Yang Z, Yan YM. Unlocking Spin Gates of Transition Metal Oxides via Strain Stimuli to Augment Potassium Ion Storage. Angew Chem Int Ed Engl 2024; 63:e202404834. [PMID: 38588076 DOI: 10.1002/anie.202404834] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/11/2024] [Revised: 04/07/2024] [Accepted: 04/07/2024] [Indexed: 04/10/2024]
Abstract
Transition metal oxides (TMOs) are key in electrochemical energy storage, offering cost-effectiveness and a broad potential window. However, their full potential is limited by poor understanding of their slow reaction kinetics and stability issues. This study diverges from conventional complex nano-structuring, concentrating instead on spin-related charge transfer and orbital interactions to enhance the reaction dynamics and stability of TMOs during energy storage processes. We successfully reconfigured the orbital degeneracy and spin-dependent electronic occupancy by disrupting the symmetry of magnetic cobalt (Co) sites through straightforward strain stimuli. The key to this approach lies in the unfilled Co 3d shell, which serves as a spin-dependent regulator for carrier transfer and orbital interactions within the reaction. We observed that the opening of these 'spin gates' occurs during a transition from a symmetric low-spin state to an asymmetric high-spin state, resulting in enhanced reaction kinetics and maintained structural stability. Specifically, the spin-rearranged Al-Co3O4 exhibited a specific capacitance of 1371 F g-1, which is 38 % higher than that of unaltered Co3O4. These results not only shed light on the spin effects in magnetic TMOs but also establish a new paradigm for designing electrochemical energy storage materials with improved efficiency.
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Affiliation(s)
- Shuyun Yao
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Yingjie Ji
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Shiyu Wang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Yuanming Liu
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Zishan Hou
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Jinrui Wang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Xueying Gao
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Weijie Fu
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Kaiqi Nie
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Jiangzhou Xie
- School of Mechanical and Manufacturing Engineering, University of, New South Wales, Sydney, New South Wales, 2052, Australia
| | - Zhiyu Yang
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
| | - Yi-Ming Yan
- State Key Lab of Organic-Inorganic Composites, Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, People's Republic of China
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3
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Cheng E, Yan L, Shi X, Lou R, Fedorov A, Behnami M, Yuan J, Yang P, Wang B, Cheng JG, Xu Y, Xu Y, Xia W, Pavlovskii N, Peets DC, Zhao W, Wan Y, Burkhardt U, Guo Y, Li S, Felser C, Yang W, Büchner B. Tunable positions of Weyl nodes via magnetism and pressure in the ferromagnetic Weyl semimetal CeAlSi. Nat Commun 2024; 15:1467. [PMID: 38368411 PMCID: PMC10874455 DOI: 10.1038/s41467-024-45658-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/10/2023] [Accepted: 01/30/2024] [Indexed: 02/19/2024] Open
Abstract
The noncentrosymmetric ferromagnetic Weyl semimetal CeAlSi with simultaneous space-inversion and time-reversal symmetry breaking provides a unique platform for exploring novel topological states. Here, by employing multiple experimental techniques, we demonstrate that ferromagnetism and pressure can serve as efficient parameters to tune the positions of Weyl nodes in CeAlSi. At ambient pressure, a magnetism-facilitated anomalous Hall/Nernst effect (AHE/ANE) is uncovered. Angle-resolved photoemission spectroscopy (ARPES) measurements demonstrated that the Weyl nodes with opposite chirality are moving away from each other upon entering the ferromagnetic phase. Under pressure, by tracing the pressure evolution of AHE and band structure, we demonstrate that pressure could also serve as a pivotal knob to tune the positions of Weyl nodes. Moreover, multiple pressure-induced phase transitions are also revealed. These findings indicate that CeAlSi provides a unique and tunable platform for exploring exotic topological physics and electron correlations, as well as catering to potential applications, such as spintronics.
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Affiliation(s)
- Erjian Cheng
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany.
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany.
| | - Limin Yan
- Center for High Pressure Science and Technology Advanced Research, 201203, Shanghai, China
- State Key Laboratory of Superhard Materials, Department of Physics, Jilin University, 130012, Changchun, China
| | - Xianbiao Shi
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, 150001, Harbin, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China
| | - Rui Lou
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany.
- Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, 12489, Berlin, Germany.
- Joint Laboratory "Functional Quantum Materials" at BESSY II, 12489, Berlin, Germany.
| | - Alexander Fedorov
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany
- Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, 12489, Berlin, Germany
- Joint Laboratory "Functional Quantum Materials" at BESSY II, 12489, Berlin, Germany
| | - Mahdi Behnami
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany
| | - Jian Yuan
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Pengtao Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Bosen Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Jin-Guang Cheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, 100190, Beijing, China
| | - Yuanji Xu
- Institute for Applied Physics, University of Science and Technology Beijing, 100083, Beijing, China
| | - Yang Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, 200241, Shanghai, China
| | - Wei Xia
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Nikolai Pavlovskii
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01069, Dresden, Germany
| | - Darren C Peets
- Institute of Solid State and Materials Physics, Technische Universität Dresden, 01069, Dresden, Germany
| | - Weiwei Zhao
- State Key Laboratory of Advanced Welding & Joining, Harbin Institute of Technology, 150001, Harbin, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology (Shenzhen), 518055, Shenzhen, China
| | - Yimin Wan
- State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
| | - Ulrich Burkhardt
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, 200031, Shanghai, China
| | - Shiyan Li
- State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, 200438, Shanghai, China
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China
- Shanghai Research Center for Quantum Sciences, 201315, Shanghai, China
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, 01187, Dresden, Germany
| | - Wenge Yang
- Center for High Pressure Science and Technology Advanced Research, 201203, Shanghai, China.
| | - Bernd Büchner
- Leibniz Institute for Solid State and Materials Research (IFW-Dresden), 01069, Dresden, Germany.
- Institute of Solid State and Materials Physics and Würzburg-Dresden Cluster of Excellence-ct.qmat, Technische Universität Dresden, 01062, Dresden, Germany.
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4
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Liu J, Gao X, Shi K, Zhang M, Wu J, Ukleev V, Radu F, Ji Y, Deng Z, Wei L, Hong Y, Hu S, Xiao W, Li L, Zhang Q, Wang Z, Wang L, Gan Y, Chen K, Liao Z. Hundred-Fold Enhancement in the Anomalous Hall Effect Induced by Hydrogenation. NANO LETTERS 2024; 24:1351-1359. [PMID: 38251855 DOI: 10.1021/acs.nanolett.3c04368] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/23/2024]
Abstract
The anomalous Hall effect (AHE) is one of the most fascinating transport properties in condensed matter physics. However, the AHE magnitude, which mainly depends on net spin polarization and band topology, is generally small in oxides and thus limits potential applications. Here, we demonstrate a giant enhancement of AHE in a LaCoO3-induced 5d itinerant ferromagnet SrIrO3 by hydrogenation. The anomalous Hall resistivity and anomalous Hall angle, which are two of the most critical parameters in AHE-based devices, are found to increase to 62.2 μΩ·cm and 3%, respectively, showing an unprecedentedly large enhancement ratio of ∼10000%. Theoretical analysis suggests the key roles of Berry curvature in enhancing AHE. Furthermore, the hydrogenation concomitantly induces the significant elevation of Curie temperature from 75 to 160 K and 40-fold reinforcement of coercivity. Such giant regulation and very large AHE magnitude observed in SrIrO3 could pave the path for 5d oxide devices.
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Affiliation(s)
- Junhua Liu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Xiaofei Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Ke Shi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Minjie Zhang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Jiating Wu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Victor Ukleev
- Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Straße 15, Berlin 12489, Germany
| | - Florin Radu
- Helmholtz-Zentrum-Berlin für Materialien und Energie, Albert-Einstein-Straße 15, Berlin 12489, Germany
| | - Yaoyao Ji
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhixiong Deng
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Long Wei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Yuhao Hong
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Shilin Hu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Wen Xiao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Lin Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Zhaosheng Wang
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei 230031, China
| | - Lingfei Wang
- Hefei National Research Center for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Yulin Gan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Zhaoliang Liao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
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5
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Manjeshwar AK, Nair S, Rajapitamahuni AK, James RD, Jalan B. Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO 3 Films. ACS NANO 2023; 17:20999-21005. [PMID: 37708240 DOI: 10.1021/acsnano.3c03625] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Controlling defect densities in SrRuO3 films is the cornerstone for probing the intricate relationship among its structural, electrical, and magnetic properties. We combine film growth, electrical transport, and magnetometry to demonstrate the adsorption-controlled growth of phase-pure, epitaxial, and stoichiometric SrRuO3 films on SrTiO3 (001) substrates using solid source metal-organic molecular beam epitaxy. Across the growth window, we show that the anomalous Hall curves arise from two distinct magnetic domains. Domains with similar anomalous Hall polarities generate the stepped feature observed within the growth window, and those with opposite polarities produce the hump-like feature present exclusively in the highly Ru-poor film. We achieve a residual resistivity ratio (RRR = ρ300K/ρ2K) of 87 in a 50 nm-thick, coherently strained, and stoichiometric SrRuO3 film, the highest reported value to date on SrTiO3 (001) substrates. We hypothesize further improvements in the RRR through strain engineering to control the tetragonal-to-orthorhombic phase transformation and the domain structure of SrRuO3 films.
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Affiliation(s)
- Anusha Kamath Manjeshwar
- Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Sreejith Nair
- Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Anil Kumar Rajapitamahuni
- Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Richard D James
- Department of Aerospace Engineering and Mechanics, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, Minnesota 55455, United States
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6
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Roy P, Zhang D, Mazza AR, Cucciniello N, Kunwar S, Zeng H, Chen A, Jia Q. Manipulating topological Hall-like signatures by interface engineering in epitaxial ruthenate/manganite heterostructures. NANOSCALE 2023; 15:17589-17598. [PMID: 37873761 DOI: 10.1039/d3nr02407e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Topologically protected non-trivial spin textures (e.g. skyrmions) give rise to a novel phenomenon called the topological Hall effect (THE) and have promising implications in future energy-efficient nanoelectronic and spintronic devices. Here, we have studied the Hall effect in SrRuO3/La0.42Ca0.58MnO3 (SRO/LCMO) bilayers. Our investigation suggests that pure SRO has hard and soft magnetic characteristics but the anomalous Hall effect (AHE) in SRO is governed by the high coercivity phase. We have shown that the proximity effect of a soft magnetic LCMO on SRO plays a critical role in interfacial magnetic coupling and transport properties in SRO. Upon reducing the SRO thickness in the bilayer, the proximity effect becomes the dominant feature, enhancing the magnitude and temperature range of THE-like signatures. The THE-like features in bilayers can be explained by a diffusive Berry phase transition model in the presence of an emergent magnetic state due to interface coupling. This work provides an alternative understanding of THE-like signatures and their manipulation in SRO-based heterostructures, bilayers and superlattices.
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Affiliation(s)
- Pinku Roy
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Di Zhang
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Alessandro R Mazza
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Nicholas Cucciniello
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Sundar Kunwar
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Hao Zeng
- Department of Physics, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA
| | - Aiping Chen
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
| | - Quanxi Jia
- Department of Materials Design and Innovation, University at Buffalo - The State University of New York, Buffalo, NY 14260, USA.
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7
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Hao L, Yi D, Wang M, Liu J, Yu P. Emergent quantum phenomena in atomically engineered iridate heterostructures. FUNDAMENTAL RESEARCH 2023; 3:313-321. [PMID: 38933764 PMCID: PMC11197666 DOI: 10.1016/j.fmre.2022.09.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/28/2022] [Revised: 09/22/2022] [Accepted: 09/25/2022] [Indexed: 11/06/2022] Open
Abstract
Over the last few years, researches in iridates have developed into an exciting field with the discovery of numerous emergent phenomena, interesting physics, and intriguing functionalities. Among the studies, iridate-based artificial structures play a crucial role owing to their extreme flexibility and tunability in lattice symmetry, chemical composition, and crystal dimensionality. In this article, we present an overview of the recent progress regarding iridate-based artificial structures. We first explicitly introduce several essential concepts in iridates. Then, we illustrate important findings on representative SrIrO3/SrTiO3 superlattices, heterostructures comprised of SrIrO3 and magnetic oxides, and their response to external electric-field stimuli. Finally, we comment on existing problems and promising future directions in this exciting field.
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Affiliation(s)
- Lin Hao
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Di Yi
- State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Meng Wang
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - Jian Liu
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
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8
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Han H, Zhou H, Guillemard C, Valvidares M, Sharma A, Li Y, Sharma AK, Kostanovskiy I, Ernst A, Parkin SSP. Reversal of Anomalous Hall Effect and Octahedral Tilting in SrRuO 3 Thin Films via Hydrogen Spillover. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207246. [PMID: 36271718 DOI: 10.1002/adma.202207246] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 09/18/2022] [Indexed: 06/16/2023]
Abstract
The perovskite SrRuO3 (SRO) is a strongly correlated oxide whose physical and structural properties are strongly intertwined. Notably, SRO is an itinerant ferromagnet that exhibits a large anomalous Hall effect (AHE) whose sign can be readily modified. Here, a hydrogen spillover method is used to tailor the properties of SRO thin films via hydrogen incorporation. It is found that the magnetization and Curie temperature of the films are strongly reduced and, at the same time, the structure evolves from an orthorhombic to a tetragonal phase as the hydrogen content is increased up to ≈0.9 H per SRO formula unit. The structural phase transition is shown, via in situ crystal truncation rod measurements, to be related to tilting of the RuO6 octahedral units. The significant changes observed in magnetization are shown, via density functional theory (DFT), to be a consequence of shifts in the Fermi level. The reported findings provide new insights into the physical properties of SRO via tailoring its lattice symmetry and emergent physical phenomena via the hydrogen spillover technique.
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Affiliation(s)
- Hyeon Han
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Charles Guillemard
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Manuel Valvidares
- ALBA Synchrotron Light Source, Cerdanyola del Vallès, Barcelona, E-08290, Spain
| | - Arpit Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Yan Li
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Ankit K Sharma
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Ilya Kostanovskiy
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
| | - Arthur Ernst
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
- Institute for Theoretical Physics, Johannes Kepler University, Linz, 4040, Austria
| | - Stuart S P Parkin
- Nano Systems from Ions, Spins, and Electrons (NISE), Max Planck Institute of Microstructure Physics, 06120, Halle (Saale), Germany
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9
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Tai L, Dai B, Li J, Huang H, Chong SK, Wong KL, Zhang H, Zhang P, Deng P, Eckberg C, Qiu G, He H, Wu D, Xu S, Davydov A, Wu R, Wang KL. Distinguishing the Two-Component Anomalous Hall Effect from the Topological Hall Effect. ACS NANO 2022; 16:17336-17346. [PMID: 36126321 DOI: 10.1021/acsnano.2c08155] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
In transport, the topological Hall effect (THE) presents itself as nonmonotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when the anomalous Hall effect (AHE) is also present, the coexistence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here, we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE" or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE + AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: (1) minor loops, (2) temperature dependence, and (3) gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". In addition, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the nonmonotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise caution and use these methods for careful examination in order to ascertain the genuine THE.
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Affiliation(s)
- Lixuan Tai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Bingqian Dai
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Jie Li
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Hanshen Huang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Su Kong Chong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Kin L Wong
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Huairuo Zhang
- Theiss Research, Inc., La Jolla, California 92037, United States
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Peng Zhang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Peng Deng
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Christopher Eckberg
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
- Fibertek, Inc., Herndon, Virginia 20171, United States
- US Army Research Laboratory, Adelphi, Maryland 20783, United States
- US Army Research Laboratory, Playa Vista, California 90094, United States
| | - Gang Qiu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Haoran He
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Di Wu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
| | - Shijie Xu
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
- Shanghai Key Laboratory of Special Artificial Microstructure and Pohl Institute of Solid State Physics and School of Physics Science and Engineering, Tongji University, Shanghai 200092, China
| | - Albert Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Ruqian Wu
- Department of Physics and Astronomy, University of California, Irvine, California 92697, United States
| | - Kang L Wang
- Department of Electrical and Computer Engineering, University of California, Los Angeles, California 90095, United States
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10
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Liu P, Miao J, Liu Q, Xu Z, Wu Y, Meng K, Xu X, Jiang Y. Large non-volatile modulation of perpendicular magnetic anisotropy in Pb (Zr0.2Ti0.8) O3/SrRuO3. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139797] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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11
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Ou Y, Yanez W, Xiao R, Stanley M, Ghosh S, Zheng B, Jiang W, Huang YS, Pillsbury T, Richardella A, Liu C, Low T, Crespi VH, Mkhoyan KA, Samarth N. ZrTe 2/CrTe 2: an epitaxial van der Waals platform for spintronics. Nat Commun 2022; 13:2972. [PMID: 35624122 PMCID: PMC9142486 DOI: 10.1038/s41467-022-30738-1] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Accepted: 05/16/2022] [Indexed: 11/08/2022] Open
Abstract
The rapid discovery of two-dimensional (2D) van der Waals (vdW) quantum materials has led to heterostructures that integrate diverse quantum functionalities such as topological phases, magnetism, and superconductivity. In this context, the epitaxial synthesis of vdW heterostructures with well-controlled interfaces is an attractive route towards wafer-scale platforms for systematically exploring fundamental properties and fashioning proof-of-concept devices. Here, we use molecular beam epitaxy to synthesize a vdW heterostructure that interfaces two material systems of contemporary interest: a 2D ferromagnet (1T-CrTe2) and a topological semimetal (ZrTe2). We find that one unit-cell (u.c.) thick 1T-CrTe2 grown epitaxially on ZrTe2 is a 2D ferromagnet with a clear anomalous Hall effect. In thicker samples (12 u.c. thick CrTe2), the anomalous Hall effect has characteristics that may arise from real-space Berry curvature. Finally, in ultrathin CrTe2 (3 u.c. thickness), we demonstrate current-driven magnetization switching in a full vdW topological semimetal/2D ferromagnet heterostructure device.
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Affiliation(s)
- Yongxi Ou
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Wilson Yanez
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Run Xiao
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Max Stanley
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Supriya Ghosh
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Boyang Zheng
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Wei Jiang
- Department of Electrical & Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Yu-Sheng Huang
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Timothy Pillsbury
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Anthony Richardella
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Chaoxing Liu
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - Tony Low
- Department of Electrical & Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
- School of Physics & Astronomy, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Vincent H Crespi
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Nitin Samarth
- Department of Physics and Materials Research Institute, The Pennsylvania State University, University Park, PA, 16802, USA.
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12
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Niu X, Chen BB, Zhong N, Xiang PH, Duan CG. Topological Hall effect in SrRuO 3thin films and heterostructures. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:244001. [PMID: 35325882 DOI: 10.1088/1361-648x/ac60d0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Accepted: 03/24/2022] [Indexed: 06/14/2023]
Abstract
Transition metal oxides hold a wide spectrum of fascinating properties endowed by the strong electron correlations. In 4dand 5doxides, exotic phases can be realized with the involvement of strong spin-orbit coupling (SOC), such as unconventional magnetism and topological superconductivity. Recently, topological Hall effects (THEs) and magnetic skyrmions have been uncovered in SrRuO3thin films and heterostructures, where the presence of SOC and inversion symmetry breaking at the interface are believed to play a key role. Realization of magnetic skyrmions in oxides not only offers a platform to study topological physics with correlated electrons, but also opens up new possibilities for magnetic oxides using in the low-power spintronic devices. In this review, we discuss recent observations of THE and skyrmions in the SRO film interfaced with various materials, with a focus on the electric tuning of THE. We conclude with a discussion on the directions of future research in this field.
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Affiliation(s)
- Xu Niu
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Bin-Bin Chen
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ni Zhong
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Ping-Hua Xiang
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
| | - Chun-Gang Duan
- Key Laboratory of Polar Materials and Devices (MOE) and Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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13
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Yao X, Wang C, Guo EJ, Wang X, Li X, Liao L, Zhou Y, Lin S, Jin Q, Ge C, He M, Bai X, Gao P, Yang G, Jin KJ. Ferroelectric Proximity Effect and Topological Hall Effect in SrRuO 3/BiFeO 3 Multilayers. ACS APPLIED MATERIALS & INTERFACES 2022; 14:6194-6202. [PMID: 35072446 DOI: 10.1021/acsami.1c21703] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Interfaces between complex oxides provide a unique opportunity to discover novel interfacial physics and functionalities. Here, we fabricate the multilayers of itinerant ferromagnet SrRuO3 (SRO) and multiferroic BiFeO3 (BFO) with atomically sharp interfaces. Atomically resolved transmission electron microscopy reveals that a large ionic displacement in BFO can penetrate into SRO layers near the BFO/SRO interfaces to a depth of 2-3 unit cells, indicating the ferroelectric proximity effect. A topological Hall effect is indicated by hump-like anomalies in the Hall measurements of the multilayer with a moderate thickness of the SRO layer. With magnetic measurements, it can be further confirmed that each SRO layer in the multilayers can be divided into interfacial and middle regions, which possess different magnetic ground states. Our work highlights the key role of functional heterointerfaces in exotic properties and provides an important guideline to design spintronic devices based on magnetic skyrmions.
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Affiliation(s)
- Xiaokang Yao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Xinyan Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaomei Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Lei Liao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yong Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shan Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xuedong Bai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Peng Gao
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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14
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Li Z, Chen X, Chen Y, Zhang Q, Zhang H, Zhang J, Shi W, He B, Zhang J, Song J, Han F, Liu B, Gu L, Hu F, Chen Y, Shen B, Sun J. Infinite-layer/perovskite oxide heterostructure-induced high-spin states in SrCuO 2/SrRuO 3 bilayer films. MATERIALS HORIZONS 2021; 8:3468-3476. [PMID: 34766611 DOI: 10.1039/d1mh01385h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Heterostructures composed of dissimilar oxides with different properties offer opportunities to develop emergent devices with desired functionalities. A key feature of oxide heterostructures is interface electronics and orbital reconstructions. Here, we combined infinite-layered SrCuO2 and perovskite SrRuO3 into heterostructures. A rare high spin state as large as 3.0 μB f.u-1 and an increase in Curie temperature by 12 K are achieved in an ultrathin SrRuO3 film capped by a SrCuO2 layer. Atomic-scale lattice imaging shows the uniform CuO2-plane-to-RuO5-pyramid connection at the interface, where the regularly arranged RuO5 pyramids were elongated along the out-of-plane direction. As revealed by theoretical calculations and spectral analysis, these features finally result in an abnormally high spin state of the interfacial Ru ions with highly polarized eg orbitals. The present work demonstrates that oxygen coordination engineering at the infinite-layer/perovskite oxide interface is a promising approach towards advanced oxide electronics.
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Affiliation(s)
- Zhe Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaobing Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Fujian Innovation Academy, Chinese Academy of Sciences, Fuzhou, Fujian 350108, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Hui Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jine Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bin He
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Jinghua Song
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Furong Han
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Banggui Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
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15
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Zhang H, Zhu XY, Xu Y, Gawryluk DJ, Xie W, Ju SL, Shi M, Shiroka T, Zhan QF, Pomjakushina E, Shang T. Giant magnetoresistance and topological Hall effect in the EuGa 4antiferromagnet. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:034005. [PMID: 34666329 DOI: 10.1088/1361-648x/ac3102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2021] [Accepted: 10/19/2021] [Indexed: 06/13/2023]
Abstract
We report on systematic temperature- and magnetic field-dependent studies of the EuGa4binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space groupI4/mmm. The electronic properties of EuGa4single crystals, with an antiferromagnetic (AFM) transition atTN∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching∼7×104% at 2 K in a magnetic field of 9 T. In the AFM state, EuGa4undergoes a series of metamagnetic transitions in an applied magnetic field, clearly manifested in its field-dependent electrical resistivity. BelowTN, in the ∼4-7 T field range, we observe also a clear hump-like anomaly in the Hall resistivity which is part of the anomalous Hall resistivity. We attribute such a hump-like feature to the topological Hall effect, usually occurring in noncentrosymmetric materials known to host topological spin textures (as e.g., magnetic skyrmions). Therefore, the family of materials with a tetragonal BaAl4-type structure, to which EuGa4and EuAl4belong, seems to comprise suitable candidates on which one can study the interplay among correlated-electron phenomena (such as charge-density wave or exotic magnetism) with topological spin textures and topologically nontrivial bands.
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Affiliation(s)
- H Zhang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - X Y Zhu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - Y Xu
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | - D J Gawryluk
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - W Xie
- DESY, Notkestraβe 85, D-22607 Hamburg, Germany
| | - S L Ju
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Shi
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - T Shiroka
- Laboratory for Muon-Spin Spectroscopy, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- Laboratorium für Festkörperphysik, ETH Zürich, CH-8093 Zurich, Switzerland
| | - Q F Zhan
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
| | | | - T Shang
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, People's Republic of China
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16
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Zhang X, Ambhire SC, Lu Q, Niu W, Cook J, Jiang JS, Hong D, Alahmed L, He L, Zhang R, Xu Y, Zhang SSL, Li P, Bian G. Giant Topological Hall Effect in van der Waals Heterostructures of CrTe 2/Bi 2Te 3. ACS NANO 2021; 15:15710-15719. [PMID: 34460216 DOI: 10.1021/acsnano.1c05519] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
Discoveries of the interfacial topological Hall effect (THE) provide an ideal platform for exploring the physics arising from the interplay between topology and magnetism. The interfacial topological Hall effect is closely related to the Dzyaloshinskii-Moriya interaction (DMI) at an interface and topological spin textures. However, it is difficult to achieve a sizable THE in heterostructures due to the stringent constraints on the constituents of THE heterostructures, such as strong spin-orbit coupling (SOC). Here, we report the observation of a giant THE signal of 1.39 μΩ·cm in the van der Waals heterostructures of CrTe2/Bi2Te3 fabricated by molecular beam epitaxy, a prototype of two-dimensional (2D) ferromagnet (FM)/topological insulator (TI). This large magnitude of THE is attributed to an optimized combination of 2D ferromagnetism in CrTe2, strong SOC in Bi2Te3, and an atomically sharp interface. Our work reveals CrTe2/Bi2Te3 as a convenient platform for achieving large interfacial THE in hybrid systems, which could be utilized to develop quantum science and high-density information storage devices.
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Affiliation(s)
- Xiaoqian Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China
| | - Siddhesh C Ambhire
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Qiangsheng Lu
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Wei Niu
- New Energy Technology Engineering Laboratory of Jiangsu Provence & School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Jacob Cook
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
| | - Jidong Samuel Jiang
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Deshun Hong
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Laith Alahmed
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Liang He
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
| | - Yongbing Xu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
- York-Nanjing Joint Centre (YNJC) for spintronics and nano engineering, Department of Electronic Engineering, The University of York, York YO10 3DD, United Kingdom
| | - Steven S-L Zhang
- Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States
| | - Peng Li
- Department of Electrical and Computer Engineering, Auburn University, Auburn, Alabama 36849, United States
| | - Guang Bian
- Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, United States
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17
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Song C, Bo T, Liu X, Guo P, Meng S, Wu K. Local Kondo scattering in 4d-electron RuO x nanoclusters on atomically-resolved ultrathin SrRuO 3 films. Phys Chem Chem Phys 2021; 23:22526-22531. [PMID: 34590637 DOI: 10.1039/d1cp02738g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Perovskite SrRuO3 is a unique 4d transition metal oxide with coexisting spin-orbit coupling (SOC) and electron-electron correlation. However, the intrinsic, non-reconstructed surface structure of SrRuO3 has not been reported so far. Here we report an atomic imaging of the non-reconstructed, SrO-terminated SrRuO3 surface by scanning tunneling microscopy/spectroscopy. Moreover, a Kondo resonant behavior is revealed in RuOx clusters located on top of the nonmagnetic SrO surface layer. The density functional theory calculations confirm that RuOx clusters possess localized 4d-electron-involved spin moments and hybridize with the conduction electrons in the metal host, resulting in the appearance of the Kondo resonance features around the Fermi level. Our work demonstrates that artificially-engineered transition metal oxides provide new opportunities to explore the Kondo physics in 4d multi-orbital systems.
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Affiliation(s)
- Chuangye Song
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China. .,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Tao Bo
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China. .,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xin Liu
- Swiss Light Source, Paul Scherrer Institute, Villigen 5232, Switzerland
| | - Pengjie Guo
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China. .,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Meng
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China. .,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Kehui Wu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China. .,Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.,School of Physics, University of Chinese Academy of Sciences, Beijing 100049, China
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18
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Lin W, Liu L, Liu Q, Li L, Shu X, Li C, Xie Q, Jiang P, Zheng X, Guo R, Lim Z, Zeng S, Zhou G, Wang H, Zhou J, Yang P, Pennycook SJ, Xu X, Zhong Z, Wang Z, Chen J. Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO 3 (111) Thin Film. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101316. [PMID: 34302392 DOI: 10.1002/adma.202101316] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2021] [Revised: 05/17/2021] [Indexed: 06/13/2023]
Abstract
The magnetic Weyl fermion originates from the time reversal symmetry (TRS)-breaking in magnetic crystalline structures, where the topology and magnetism entangle with each other. Therefore, the magnetic Weyl fermion is expected to be effectively tuned by the magnetic field and electrical field, which holds promise for future topologically protected electronics. However, the electrical field control of the magnetic Weyl fermion has rarely been reported, which is prevented by the limited number of identified magnetic Weyl solids. Here, the electric field control of the magnetic Weyl fermion is demonstrated in an epitaxial SrRuO3 (111) thin film. The magnetic Weyl fermion in the SrRuO3 films is indicated by the chiral anomaly induced magnetotransport, and is verified by the observed Weyl nodes in the electronic structures characterized by the angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Through the ionic-liquid gating experiment, the effective manipulation of the Weyl fermion by electric field is demonstrated, in terms of the sign-change of the ordinary Hall effect, the nonmonotonic tuning of the anomalous Hall effect, and the observation of the linear magnetoresistance under proper gating voltages. The work may stimulate the searching and tuning of Weyl fermions in other magnetic materials, which are promising in energy-efficient electronics.
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Affiliation(s)
- Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qing Liu
- Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Lei Li
- Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Xinyu Shu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Changjian Li
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Qidong Xie
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Peiheng Jiang
- Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xuan Zheng
- Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Department of Chemical and Environmental Engineering, The University of Nottingham, Ningbo, 315042, China
| | - Rui Guo
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Zhishiuh Lim
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
| | - Shengwei Zeng
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
| | - Guowei Zhou
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Han Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Jing Zhou
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore, 117603, Singapore
| | - Stephen J Pennycook
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Xiaohong Xu
- Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, 041004, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiming Wang
- Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- China Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
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19
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Lu J, Si L, Zhang Q, Tian C, Liu X, Song C, Dong S, Wang J, Cheng S, Qu L, Zhang K, Shi Y, Huang H, Zhu T, Mi W, Zhong Z, Gu L, Held K, Wang L, Zhang J. Defect-Engineered Dzyaloshinskii-Moriya Interaction and Electric-Field-Switchable Topological Spin Texture in SrRuO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102525. [PMID: 34223676 DOI: 10.1002/adma.202102525] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/01/2021] [Indexed: 06/13/2023]
Abstract
In situ electrical control of the Dzyaloshinskii-Moriya interaction (DMI) is one of the central but challenging goals toward skyrmion-based device applications. An atomic design of defective interfaces in spin-orbit-coupled transition-metal oxides can be an appealing strategy to achieve this goal. In this work, by utilizing the distinct formation energies and diffusion barriers of oxygen vacancies at SrRuO3 /SrTiO3 (001), a sharp interface is constructed between oxygen-deficient and stoichiometric SrRuO3 . This interfacial inversion-symmetry breaking leads to a sizable DMI, which can induce skyrmionic magnetic bubbles and the topological Hall effect in a more than 10 unit-cell-thick SrRuO3 . This topological spin texture can be reversibly manipulated through the migration of oxygen vacancies under electric gating. In particular, the topological Hall signal can be deterministically switched ON and OFF. This result implies that the defect-engineered topological spin textures may offer an alternate perspective for future skyrmion-based memristor and synaptic devices.
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Affiliation(s)
- Jingdi Lu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Liang Si
- Institut für Festkörperphysik, TU Wien, Wiedner Hauptstraße 8-10, Vienna, 1040, Austria
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Chengfeng Tian
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Xin Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Chuangye Song
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Shouzhe Dong
- School of Materials Science and Engineering, and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Jie Wang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Sheng Cheng
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Lili Qu
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Kexuan Zhang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Youguo Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Houbing Huang
- School of Materials Science and Engineering, and Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
- Spallation Neutron Source Science Center, Dongguan, 523803, China
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin, 300354, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Science, Beijing, 100190, China
| | - Karsten Held
- Institut für Festkörperphysik, TU Wien, Wiedner Hauptstraße 8-10, Vienna, 1040, Austria
| | - Lingfei Wang
- Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, 230026, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing, 100875, China
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20
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Shi X, Jiang J, Wang Y, Hou Z, Zhang Q, Mi W, Zhang X. Emergence of Room Temperature Magnetotransport Anomaly in Epitaxial Pt/γ'-Fe 4N/MgO Heterostructures toward Noncollinear Spintronics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:26639-26648. [PMID: 34042440 DOI: 10.1021/acsami.1c07098] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Noncollinear spin textures have attracted much attention due to their novel physical behaviors in heavy/ferromagnetic metal (HM/FM) systems. The transport anomaly, appearing as contrast humps in Hall resistivity curves, is the mark of noncollinear spin textures. Here, the epitaxial Pt/γ'-Fe4N bilayers with noncollinear spin textures were obtained by facing target sputtering. Large micromagnetic Dzyaloshinskii-Moriya interaction coefficient D of 2.90 mJ/m2 appears in Pt/γ'-Fe4N/MgO systems, which is larger than 2.05 mJ/m2 of Pt/Co/MgO systems with skyrmionic states. Moreover, at 300 K, magnetic bubble-like domains appear in Pt/γ'-Fe4N bilayers that just possess a 3 nm thick ferromagnetic layer instead of [HM/FM]n or [HM1/FM/HM2]n multilayers. Additionally, a room-temperature transport anomaly appears in Pt/γ'-Fe4N/MgO systems. The contrast humps of Pt(3 nm)/γ'-Fe4N(tFe4N ≤ 4 nm)/MgO heterostructures are not sharp due to the nonuniform distributions of the magnetic bubble-like domains with various sizes and irregular shapes, as observed by the magnetic force microscopy. The discovery of epitaxial Pt/γ'-Fe4N bilayers with noncollinear spin states is more crucial than that of polycrystalline or amorphous HM/FM systems for reducing ohmic heating, which provides a candidate for noncollinear spintronic applications.
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Affiliation(s)
- Xiaohui Shi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Yadong Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Qiang Zhang
- PSE Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
- Core Technology Platforms, New York University Abu Dhabi, P.O. Box 129188, Abu Dhabi 129188, United Arab Emirates
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China
| | - Xixiang Zhang
- PSE Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
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21
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Manipulating Berry curvature of SrRuO 3 thin films via epitaxial strain. Proc Natl Acad Sci U S A 2021; 118:2101946118. [PMID: 33911036 DOI: 10.1073/pnas.2101946118] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as the intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of the Ru magnetic moment in real space of a tensile-strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in noncoplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.
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22
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Lin S, Zhang Q, Sang X, Zhao J, Cheng S, Huon A, Jin Q, Chen S, Chen S, Cui W, Guo H, He M, Ge C, Wang C, Wang J, Fitzsimmons MR, Gu L, Zhu T, Jin K, Guo EJ. Dimensional Control of Octahedral Tilt in SrRuO 3 via Infinite-Layered Oxides. NANO LETTERS 2021; 21:3146-3154. [PMID: 33750141 DOI: 10.1021/acs.nanolett.1c00352] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Manipulation of octahedral distortion at atomic scale is an effective means to tune the ground states of functional oxides. Previous work demonstrates that strain and film thickness are variable parameters to modify the octahedral parameters. However, selective control of bonding geometry by structural propagation from adjacent layers is rarely studied. Here we propose a new route to tune the ferromagnetism in SrRuO3 (SRO) ultrathin layers by oxygen coordination of adjacent SrCuO2 (SCO) layers. The infinite-layered CuO2 exhibits a structural transformation from "planar-type" to "chain-type" with reduced film thickness. Two orientations dramatically modify the polyhedral connectivity at the interface, thus altering the octahedral distortion of SRO. The local structural variation changes the spin state of Ru and orbital hybridization strength, leading to a significant change in the magnetoresistance and anomalous Hall resistivity. These findings could launch investigations into adaptive control of functionalities in quantum oxide heterostructures using oxygen coordination.
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Affiliation(s)
- Shan Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiahan Sang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing and Nanostructure Research Center, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
| | - Jiali Zhao
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Sheng Cheng
- Spallation Neutron Source Science Center, Dongguan 523803, China
| | - Amanda Huon
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Qiao Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Shuang Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Engineering, Zhengzhou University, Zhengzhou 450001, China
| | - Shengru Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Wenjun Cui
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing and Nanostructure Research Center, Wuhan University of Technology, 122 Luoshi Road, Wuhan 430070, China
| | - Haizhong Guo
- School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Jiaou Wang
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Michael R Fitzsimmons
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Tao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Spallation Neutron Source Science Center, Dongguan 523803, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
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23
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Real-space observation of ferroelectrically induced magnetic spin crystal in SrRuO 3. Nat Commun 2021; 12:2007. [PMID: 33790268 PMCID: PMC8012650 DOI: 10.1038/s41467-021-22165-5] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/17/2020] [Accepted: 03/04/2021] [Indexed: 11/25/2022] Open
Abstract
Unusual features in the Hall Resistivity of thin film systems are frequently associated with whirling spin textures such as Skyrmions. A host of recent investigations of Hall Hysteresis loops in SrRuO3 heterostructures have provided conflicting evidence for different causes for such features. We have constructed an SrRuO3-PbTiO3 (Ferromagnetic – Ferroelectric) bilayer that exhibits features in the Hall Hysteresis previously attributed to a Topological Hall Effect, and Skyrmions. Here we show field dependent Magnetic Force Microscopy measurements throughout the key fields where the ‘THE’ presents, revealing the emergence to two periodic, chiral spin textures. The zero-field cycloidal phase, which then transforms into a ‘double-q’ incommensurate spin crystal appears over the appearance of the ‘Topological-like’ Hall effect region, and develop into a ferromagnetic switching regime as the sample reaches saturation, and the ‘Topological-like’ response diminishes. Scanning Tunnelling Electron Microscopy and Density Functional Theory is used to observe and analyse surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system. There is an ongoing debate in the origin of unusual bumps in the resistive Hall measurements in SrRuO3 systems. Here, the authors analyze surface inversion symmetry breaking and confirm the role of an interfacial Dzyaloshinskii–Moriya interaction at the heart of the system, revealing a magnetic spin crystal emergent across the unusual bumps.
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24
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Xu Y, Das L, Ma JZ, Yi CJ, Nie SM, Shi YG, Tiwari A, Tsirkin SS, Neupert T, Medarde M, Shi M, Chang J, Shang T. Unconventional Transverse Transport above and below the Magnetic Transition Temperature in Weyl Semimetal EuCd_{2}As_{2}. PHYSICAL REVIEW LETTERS 2021; 126:076602. [PMID: 33666464 DOI: 10.1103/physrevlett.126.076602] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2020] [Revised: 11/13/2020] [Accepted: 01/25/2021] [Indexed: 06/12/2023]
Abstract
As exemplified by the growing interest in the quantum anomalous Hall effect, the research on topology as an organizing principle of quantum matter is greatly enriched from the interplay with magnetism. In this vein, we present a combined electrical and thermoelectrical transport study on the magnetic Weyl semimetal EuCd_{2}As_{2}. Unconventional contribution to the anomalous Hall and anomalous Nernst effects were observed both above and below the magnetic transition temperature of EuCd_{2}As_{2}, indicating the existence of significant Berry curvature. EuCd_{2}As_{2} represents a rare case in which this unconventional transverse transport emerges both above and below the magnetic transition temperature in the same material. The transport properties evolve with temperature and field in the antiferromagnetic phase in a different manner than in the paramagnetic phase, suggesting different mechanisms to their origin. Our results indicate EuCd_{2}As_{2} is a fertile playground for investigating the interplay between magnetism and topology, and potentially a plethora of topologically nontrivial phases rooted in this interplay.
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Affiliation(s)
- Y Xu
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - L Das
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - J Z Ma
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
- Swiss Light Source, Paul Scherrer Institut, Villigen CH-5232, Switzerland
| | - C J Yi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - S M Nie
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94035, USA
| | - Y G Shi
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - A Tiwari
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
- Condensed Matter Theory Group, Paul Scherrer Institute, CH-5232 Villigen PSI, Switzerland
| | - S S Tsirkin
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - T Neupert
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - M Medarde
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
| | - M Shi
- Swiss Light Source, Paul Scherrer Institut, Villigen CH-5232, Switzerland
| | - J Chang
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
| | - T Shang
- Physik-Institut, Universität Zürich, Winterthurerstrasse 190, CH-8057 Zürich, Switzerland
- Laboratory for Multiscale Materials Experiments, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
- Key Laboratory of Polar Materials and Devices (MOE), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
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25
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Li Z, Liu X, Jiang J, Mi W, Bai H. Electric field induced reversal of spin polarization, magnetic anisotropy and tailored Dzyaloshinskii-Moriya interaction in underoxidized SrRuO 3/SrTiO 3 heterostructures. Phys Chem Chem Phys 2021; 23:3008-3018. [PMID: 33480932 DOI: 10.1039/d0cp06362b] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Electric field tailored magnetic properties of the perovskite-type oxide heterostructures are important in spintronic devices with low energy consumption and small size. Here, the electric field modulated magnetic properties of underoxidized SrRuO3 (SRO)/SrTiO3 (STO) heterostructures are investigated using first-principles calculations. The spin polarization of underoxidized SRO/STO heterostructures turns from negative to positive as the electric field changes from -0.2 to 0.2 V nm-1. The underoxidized SRO/STO heterostructure with 7 SRO atomic layers turns from perpendicular magnetic anisotropy to in-plane magnetic anisotropy as the electric field turns from -0.2 to 0.2 V nm-1, which can be attributed to the in-plane dx2-y2 and out-of-plane dxz, dyz orbitals. The Dzyaloshinskii-Moriya interaction of underoxidized SRO/STO heterostructures can also be effectively tailored using an electric field. These results indicate that the use of electric field is an effective method to modulate magnetic properties of perovskite-type oxide heterostructures, which is beneficial for the development of the high-performance spintronic devices.
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Affiliation(s)
- Zengjie Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Xiang Liu
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Jiawei Jiang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Wenbo Mi
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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26
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Chen S, Yuan S, Hou Z, Tang Y, Zhang J, Wang T, Li K, Zhao W, Liu X, Chen L, Martin LW, Chen Z. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000857. [PMID: 32815214 DOI: 10.1002/adma.202000857] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 04/17/2020] [Indexed: 06/11/2023]
Abstract
Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
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Affiliation(s)
- Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Jinping Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tao Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Weiwei Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xingjun Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
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27
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Liu J, Singh A, Kuerbanjiang B, Barnes CHW, Hesjedal T. Kerr effect anomaly in magnetic topological insulator superlattices. NANOTECHNOLOGY 2020; 31:434001. [PMID: 32748803 DOI: 10.1088/1361-6528/aba210] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the magneto-optical Kerr effect (MOKE) study of magnetic topological insulator superlattice films with alternating transition-metal and rare-earth doping. We observe an unexpected hump in the MOKE hysteresis loops upon magnetization reversal at low temperatures, reminiscent of the topological Hall effect (THE) reported in transport measurements. The THE is commonly associated with the existence of magnetic skyrmions, i.e. chiral spin textures originating from topological defects in real space. Here, the observation of the effect is tied to ferromagnetic ordering in the rare-earth-doped layers of the superlattice. Our study may provide a new approach for the non-invasive optical investigation of skyrmions in magnetic films, complementary to electrical transport measurements, where the topological Hall signal is often the only hint of non-trivial magnetization patterns.
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Affiliation(s)
- Jieyi Liu
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, United Kingdom. Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge, CB3 0HE, United Kingdom
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Roh CJ, Jung MC, Kim JR, Go KJ, Kim J, Oh HJ, Jo YR, Shin YJ, Choi JG, Kim BJ, Noh DY, Choi SY, Noh TW, Han MJ, Lee JS. Polar Metal Phase Induced by Oxygen Octahedral Network Relaxation in Oxide Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003055. [PMID: 32914531 DOI: 10.1002/smll.202003055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/15/2020] [Revised: 07/13/2020] [Indexed: 06/11/2023]
Abstract
ABO3 perovskite materials and their derivatives have inherent structural flexibility due to the corner sharing network of the BO6 octahedron, and the large variety of possible structural distortions and strong coupling between lattice and charge/spin degrees of freedom have led to the emergence of intriguing properties, such as high-temperature superconductivity, colossal magnetoresistance, and improper ferroelectricity. Here, an unprecedented polar ferromagnetic metal phase in SrRuO3 (SRO) thin films is presented, arising from the strain-controlled oxygen octahedral rotation (OOR) pattern. For compressively strained SRO films grown on SrTiO3 substrate, oxygen octahedral network relaxation is accompanied by structural phase separation into strained tetragonal and bulk-like orthorhombic phases, and the asymmetric OOR evolution across the phase boundary allows formation of the polar phase, while bulk metallic and ferromagnetic properties are maintained. From the results, it is expected that other oxide perovskite thin films will also yield similar structural environments with variation of OOR patterns, and thereby provide promising opportunities for atomic scale control of material properties through strain engineering.
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Affiliation(s)
- Chang Jae Roh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Myung-Chul Jung
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jeong Rae Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Kyoung-June Go
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Jinkwon Kim
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Ho Jun Oh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Yong-Ryun Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Yeong Jae Shin
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Jeong Gi Choi
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Bong-Joong Kim
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Do Young Noh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Tae Won Noh
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University (SNU), Seoul, 08826, Republic of Korea
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea
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29
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Huang H, Lee SJ, Kim B, Sohn B, Kim C, Kao CC, Lee JS. Detection of the Chiral Spin Structure in Ferromagnetic SrRuO 3 Thin Film. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37757-37763. [PMID: 32696641 DOI: 10.1021/acsami.0c10545] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
SrRuO3 (SRO) thin films and their heterostructure have attracted much attention because of the recently demonstrated fascinating properties, such as topological Hall effect and skyrmions. Critical to the understanding of those SRO properties is the study of the spin configuration. Here, we conduct resonant soft X-ray scattering (RSXS) at the oxygen K edge to investigate the spin configuration of a four-unit-cell SRO film that was grown epitaxially on a single-crystal SrTiO3. The RSXS signal under a magnetic field (∼0.4 tesla) clearly shows a magnetic dichroism pattern around the specular reflection. Model calculations on the RSXS signal demonstrate that the magnetic dichroism pattern originates from a Néel-type chiral spin structure in this SRO thin film. We believe that the observed spin structure of the SRO system is a critical piece of information for understanding its intriguing magnetic and transport properties.
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Affiliation(s)
- Hai Huang
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Sang-Jun Lee
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Bongju Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, South Korea
| | - Byungmin Sohn
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea
| | - Changyoung Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, South Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, South Korea
| | - Chi-Chang Kao
- SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Jun-Sik Lee
- Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
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30
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Analysis of Metal-Insulator Crossover in Strained SrRuO3 Thin Films by X-ray Photoelectron Spectroscopy. COATINGS 2020. [DOI: 10.3390/coatings10080780] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
The electronic properties of strontium ruthenate SrRuO3 perovskite oxide thin films are modified by epitaxial strain, as determined by growing on different substrates by pulsed laser deposition. Temperature dependence of the transport properties indicates that tensile strain deformation of the SrRuO3 unit cell reduces the metallicity of the material as well as its metal-insulator-transition (MIT) temperature. On the contrary, the shrinkage of the Ru–O–Ru buckling angle due to compressive strain is counterweighted by the increased overlap of the conduction Ru-4d orbitals with the O-2p ones due to the smaller interatomic distances resulting into an increased MIT temperature, i.e., a more conducting material. In particular, in the more metallic samples, the core level X-ray photoemission spectroscopy lineshapes show the occurrence of an extra-peak at the lower binding energies of the main Ru-3d peak that is attributed to screening, as observed in volume sensitive photoemission of the unstrained material.
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31
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Qin P, Feng Z, Zhou X, Guo H, Wang J, Yan H, Wang X, Chen H, Zhang X, Wu H, Zhu Z, Liu Z. Anomalous Hall Effect, Robust Negative Magnetoresistance, and Memory Devices Based on a Noncollinear Antiferromagnetic Metal. ACS NANO 2020; 14:6242-6248. [PMID: 32298083 DOI: 10.1021/acsnano.0c02325] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We report the successful fabrication of noncollinear antiferromagnetic D019 Mn3Ge thin films on insulating oxide substrates. The anomalous Hall effect and the large parallel negative magnetoresistance that is robust up to 53 T are observed in the thin films, which may provide evidence for the recent theoretical prediction of the existence of Weyl fermions in antiferromagnetic Mn3Ge. More importantly, we integrate the Mn3Ge thin films onto ferroelectric PMN-PT substrates and manipulate the longitudinal resistance reversibly by electric fields at room temperature, demonstrating the anisotropic magnetoresistance effect in noncollinear antiferromagnets, which thus illustrates the potential of antiferromagnetic Mn3Ge for information storage applications.
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Affiliation(s)
- Peixin Qin
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zexin Feng
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiaorong Zhou
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Huixin Guo
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Jinhua Wang
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Han Yan
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xiaoning Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Hongyu Chen
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Xin Zhang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Haojiang Wu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
| | - Zengwei Zhu
- Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zhiqi Liu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China
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32
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Wang L, Feng Q, Lee HG, Ko EK, Lu Q, Noh TW. Controllable Thickness Inhomogeneity and Berry Curvature Engineering of Anomalous Hall Effect in SrRuO 3 Ultrathin Films. NANO LETTERS 2020; 20:2468-2477. [PMID: 32202801 DOI: 10.1021/acs.nanolett.9b05206] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In quantum matters hosting electron-electron correlation and spin-orbit coupling, spatial inhomogeneities, arising from competing ground states, can be essential for understanding exotic topological properties. A prominent example is Hall anomalies observed in SrRuO3 films, which were interpreted in terms of either magnetic skyrmion-induced topological Hall effect or inhomogeneous anomalous Hall effect (AHE). To clarify this ambiguity, we systematically investigated the evolution of AHE with controllable inhomogeneities in SrRuO3 film thickness (tSRO). By exploiting the step-flow growth of SrRuO3 films, we induced a microscopically ordered stripe pattern with one-unit-cell differences in tSRO. The associated spatial distribution of momentum-space Berry curvatures enables a two-channel AHE with hump-like Hall anomalies, which can be continuously engineered according to non-integer tSRO. We further microscopically characterized the stripe-like ferromagnetic domains and two-step magnetic switching behavior in the inhomogeneous SrRuO3 film. These unique features can be utilized to identify the two-channel AHE model and understand its microscopic origin.
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Affiliation(s)
- Lingfei Wang
- Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Qiyuan Feng
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory and High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Han Gyeol Lee
- Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Eun Kyo Ko
- Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Qingyou Lu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory and High Magnetic Field Laboratory of Anhui Province, Chinese Academy of Sciences, Hefei, Anhui 230031, China
- Hefei National Laboratory for Physical Sciences at the Microscale and Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Tae Won Noh
- Center for Correlated Electron Systems (CCES), Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
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33
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Wang H, Dai Y, Liu Z, Xie Q, Liu C, Lin W, Liu L, Yang P, Wang J, Venkatesan TV, Chow GM, Tian H, Zhang Z, Chen J. Overcoming the Limits of the Interfacial Dzyaloshinskii-Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1904415. [PMID: 32090416 DOI: 10.1002/adma.201904415] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2019] [Revised: 01/21/2020] [Indexed: 06/10/2023]
Abstract
Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii-Moriya interaction (DMI). Here, magnetic topological states in a 40-unit cells (16 nm) SrRuO3 layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO3 /BiFeO3 heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.
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Affiliation(s)
- Han Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Yingying Dai
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Zhongran Liu
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Qidong Xie
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Chao Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Weinan Lin
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Liang Liu
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ping Yang
- Singapore Synchrotron Light Source (SSLS), National University of Singapore, Singapore, 117603, Singapore
| | - John Wang
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Thirumalai Venky Venkatesan
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- NUSNNI-Nanocore, National University of Singapore, Singapore, 117411, Singapore
| | - Gan Moog Chow
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - He Tian
- Center of Electron Microscope, State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Jingsheng Chen
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
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Wysocki L, Schöpf J, Ziese M, Yang L, Kovács A, Jin L, Versteeg RB, Bliesener A, Gunkel F, Kornblum L, Dittmann R, van Loosdrecht PHM, Lindfors-Vrejoiu I. Electronic Inhomogeneity Influence on the Anomalous Hall Resistivity Loops of SrRuO 3 Epitaxially Interfaced with 5d Perovskites. ACS OMEGA 2020; 5:5824-5833. [PMID: 32226862 PMCID: PMC7097901 DOI: 10.1021/acsomega.9b03996] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/24/2019] [Accepted: 02/05/2020] [Indexed: 06/10/2023]
Abstract
SrRuO3, a 4d ferromagnet with multiple Weyl nodes at the Fermi level, offers a rich playground to design epitaxial heterostructures and superlattices with fascinating magnetic and magnetotransport properties. Interfacing ultrathin SrRuO3 layers with large spin-orbit coupling 5d transition-metal oxides, such as SrIrO3, results in pronounced peaklike anomalies in the magnetic field dependence of the Hall resistivity. Such anomalies have been attributed either to the formation of Néel-type skyrmions or to modifications of the Berry curvature of the topologically nontrivial conduction bands near the Fermi level of SrRuO3. Here, epitaxial multilayers based on SrRuO3 interfaced with 5d perovskite oxides, such as SrIrO3 and SrHfO3, were studied. This work focuses on the magnetotransport properties of the multilayers, aiming to unravel the role played by the interfaces with 5d perovskites in the peaklike anomalies of the Hall resistance loops of SrRuO3 layers. Interfacing with large band gap insulating SrHfO3 layers did not influence the anomalous Hall resistance loops, while interfacing with the nominally paramagnetic semimetal SrIrO3 resulted in pronounced peaklike anomalies, which have been lately attributed to a topological Hall effect contribution as a result of skyrmions. This interpretation is, however, under strong debate and lately alternative causes, such as inhomogeneity of the thickness and the electronic properties of the SrRuO3 layers, have been considered. Aligned with these latter proposals, our findings reveal the central role played in the anomalies of the Hall resistivity loops by electronic inhomogeneity of SrRuO3 layers due to the interfacing with semimetallic 5d5 SrIrO3.
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Affiliation(s)
- Lena Wysocki
- Institute
of Physics II, University of Cologne, 50937 Cologne, Germany
| | - Jörg Schöpf
- Institute
of Physics II, University of Cologne, 50937 Cologne, Germany
| | - Michael Ziese
- Felix
Bloch Institute for Solid State Physics, University of Leipzig, 04109 Leipzig, Germany
| | - Lin Yang
- Institute
of Physics II, University of Cologne, 50937 Cologne, Germany
| | - András Kovács
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Lei Jin
- Ernst
Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
| | - Rolf B. Versteeg
- Institute
of Physics II, University of Cologne, 50937 Cologne, Germany
| | - Andrea Bliesener
- Institute
of Physics II, University of Cologne, 50937 Cologne, Germany
| | - Felix Gunkel
- PGI-7, Forschungszentrum
Jülich, 52428 Jülich, Germany
- Institute
of Electronic Materials (IWE2), RWTH Aachen
University, 52062 Aachen, Germany
| | - Lior Kornblum
- Andrew &
Erna Viterbi Department of Electrical Engineering, Technion—Israel Institute of Technology, 3200003 Haifa, Israel
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Gu Y, Song C, Zhang Q, Li F, Tan H, Xu K, Li J, Saleem MS, Fayaz MU, Peng J, Hu F, Gu L, Liu W, Zhang Z, Pan F. Interfacial Control of Ferromagnetism in Ultrathin SrRuO 3 Films Sandwiched between Ferroelectric BaTiO 3 Layers. ACS APPLIED MATERIALS & INTERFACES 2020; 12:6707-6715. [PMID: 31927907 DOI: 10.1021/acsami.9b20941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Interfaces between materials provide an intellectually rich arena for fundamental scientific discovery and device design. However, the frustration of magnetization and conductivity of perovskite oxide films under reduced dimensionality is detrimental to their device performance, preventing their active low-dimensional application. Herein, by inserting the ultrathin 4d ferromagnetic SrRuO3 layer between ferroelectric BaTiO3 layers to form a sandwich heterostructure, we observe enhanced physical properties in ultrathin SrRuO3 films, including longitudinal conductivity, Curie temperature, and saturated magnetic moment. Especially, the saturated magnetization can be enhanced to ∼3.12 μB/Ru in ultrathin BaTiO3/SrRuO3/BaTiO3 trilayers, which is beyond the theoretical limit of bulk value (2 μB/Ru). This observation is attributed to the synergistic ferroelectric proximity effect (SFPE) at upper and lower BaTiO3/SrRuO3 heterointerfaces, as revealed by the high-resolution lattice structure analysis. This SFPE in dual-ferroelectric interface cooperatively induces ferroelectric-like lattice distortions in RuO6 oxygen octahedra and subsequent spin-state crossover in SrRuO3, which in turn accounts for the observed enhanced magnetization. Besides the fundamental significance of interface-induced spin-lattice coupling, our findings also provide a viable route to the electrical control of magnetic ordering, taking a step toward low-power applications in all-oxide spintronics.
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Affiliation(s)
- Youdi Gu
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Fan Li
- Max Planck Institute for Microstructure Physics , Halle (Saale) D-06120 , Germany
| | - Hengxin Tan
- Max Planck Institute for Microstructure Physics , Halle (Saale) D-06120 , Germany
| | - Kun Xu
- National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jia Li
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Muhammad Shahrukh Saleem
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Muhammad Umer Fayaz
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
| | - Jingjing Peng
- Beijing Institute of Aeronautical Materials , Beijing 100095 , China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics , Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Beijing 100190 , China
| | - Wei Liu
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science , Institute of Metal Research, University of Chinese Academy of Sciences, Chinese Academy of Sciences , Shenyang 110016 , China
| | - Feng Pan
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering , Tsinghua University , Beijing 100084 , China
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36
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Kim D, Lim H, Ha SS, Seo O, Lee SS, Kim J, Kim KJ, Perez Ramirez L, Gallet JJ, Bournel F, Jo JY, Nemsak S, Noh DY, Mun BS. Correlation between structural phase transition and surface chemical properties of thin film SrRuO 3/SrTiO 3 (001). J Chem Phys 2020; 152:034704. [PMID: 31968967 DOI: 10.1063/1.5134653] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Abstract
The correlation between the structural phase transition (SPT) and oxygen vacancy in SrRuO3 (SRO) thin films was investigated by in situ X-ray diffraction (XRD) and ambient pressure X-ray photoelectron spectroscopy (AP-XPS). In situ XRD shows that the SPT occurs from a monoclinic SRO phase to a tetragonal SRO phase near ∼200 °C, regardless of the pressure environment. On the other hand, significant core level shifts in both the Ru and Sr photoemission spectra are found under ultrahigh vacuum, but not under the oxygen pressure environment. The directions and behavior of the core level shift of Ru and Sr are attributed to the formation of oxygen vacancy across the SPT temperature of SRO. The analysis of in situ XRD and AP-XPS results provides an evidence for the formation of metastable surface oxide possibly due to the migration of internal oxygen atoms across the SPT temperature, indicating the close relationship between oxygen vacancy and SPT in SRO thin films.
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Affiliation(s)
- Dongwoo Kim
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Hojoon Lim
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Sung Soo Ha
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Okkyun Seo
- Synchrotron X-ray Station at SPring-8, Research Network and Facility Services Division, National Institute for Materials Science (NIMS), Kouto, Sayo, Hyogo 679-5148, Japan
| | - Sung Su Lee
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Jinwoo Kim
- Pohang Accelerator Laboratory, POSTECH, 127 Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, South Korea
| | - Ki-Jeong Kim
- Pohang Accelerator Laboratory, POSTECH, 127 Jigok-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, South Korea
| | - Lucia Perez Ramirez
- Sorbonne Université, CNRS, Laboratoire de Chimie Physique Matière et Rayonnement, UMR 7614, Campus Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France
| | - Jean-Jacques Gallet
- Sorbonne Université, CNRS, Laboratoire de Chimie Physique Matière et Rayonnement, UMR 7614, Campus Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France
| | - Fabrice Bournel
- Sorbonne Université, CNRS, Laboratoire de Chimie Physique Matière et Rayonnement, UMR 7614, Campus Pierre et Marie Curie, 4 place Jussieu, 75252 Paris Cedex 05, France
| | - Ji Young Jo
- School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Slavomir Nemsak
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Do Young Noh
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
| | - Bongjin Simon Mun
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, South Korea
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Li Z, Shen S, Tian Z, Hwangbo K, Wang M, Wang Y, Bartram FM, He L, Lyu Y, Dong Y, Wan G, Li H, Lu N, Zang J, Zhou H, Arenholz E, He Q, Yang L, Luo W, Yu P. Reversible manipulation of the magnetic state in SrRuO 3 through electric-field controlled proton evolution. Nat Commun 2020; 11:184. [PMID: 31924767 PMCID: PMC6954193 DOI: 10.1038/s41467-019-13999-1] [Citation(s) in RCA: 25] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2018] [Accepted: 11/29/2019] [Indexed: 11/09/2022] Open
Abstract
Ionic substitution forms an essential pathway to manipulate the structural phase, carrier density and crystalline symmetry of materials via ion-electron-lattice coupling, leading to a rich spectrum of electronic states in strongly correlated systems. Using the ferromagnetic metal SrRuO3 as a model system, we demonstrate an efficient and reversible control of both structural and electronic phase transformations through the electric-field controlled proton evolution with ionic liquid gating. The insertion of protons results in a large structural expansion and increased carrier density, leading to an exotic ferromagnetic to paramagnetic phase transition. Importantly, we reveal a novel protonated compound of HSrRuO3 with paramagnetic metallic as ground state. We observe a topological Hall effect at the boundary of the phase transition due to the proton concentration gradient across the film-depth. We envision that electric-field controlled protonation opens up a pathway to explore novel electronic states and material functionalities in protonated material systems.
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Affiliation(s)
- Zhuolu Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Shengchun Shen
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Zijun Tian
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy and Institute of Natural Sciences, Shanghai Jiao Tong University, 200240, Shanghai, China
| | - Kyle Hwangbo
- Department of Physics, University of Toronto, Toronto, ON, M5S 1A7, Canada
| | - Meng Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Yujia Wang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - F Michael Bartram
- Department of Physics, University of Toronto, Toronto, ON, M5S 1A7, Canada
| | - Liqun He
- Department of Physics, University of Toronto, Toronto, ON, M5S 1A7, Canada
| | - Yingjie Lyu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Yongqi Dong
- Advanced Photon Source, Argonne National Lab, Argonne, IL, 60439, USA
- Materials Science Division, Argonne National Lab, Argonne, IL, 60439, USA
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, 230026, Hefei, Anhui, China
| | - Gang Wan
- Materials Science Division, Argonne National Lab, Argonne, IL, 60439, USA
| | - Haobo Li
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
| | - Nianpeng Lu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, 100190, Beijing, China
| | - Jiadong Zang
- Department of Physics and Astronomy, University of New Hampshire, Durham, NH, 03824, USA
| | - Hua Zhou
- Advanced Photon Source, Argonne National Lab, Argonne, IL, 60439, USA
| | - Elke Arenholz
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Qing He
- Department of Physics, Durham University, Durham, DH13LE, United Kingdom
| | - Luyi Yang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China.
- Department of Physics, University of Toronto, Toronto, ON, M5S 1A7, Canada.
- Frontier Science Center for Quantum Information, 100084, Beijing, China.
| | - Weidong Luo
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy and Institute of Natural Sciences, Shanghai Jiao Tong University, 200240, Shanghai, China.
- Collaborative Innovation Center of Advanced Microstructures, 210093, Nanjing, China.
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, 100084, Beijing, China.
- Frontier Science Center for Quantum Information, 100084, Beijing, China.
- RIKEN Center for Emergent Matter Science (CEMS), Wako, 351-198, Japan.
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38
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Li Y, Zhang L, Zhang Q, Li C, Yang T, Deng Y, Gu L, Wu D. Emergent Topological Hall Effect in La 0.7Sr 0.3MnO 3/SrIrO 3 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2019; 11:21268-21274. [PMID: 31117466 DOI: 10.1021/acsami.9b05562] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Recently, perovskite oxide heterostructures have drawn great attention because multiple and complex coupling at the heterointerface may produce novel magnetic and electric phenomena that are not expected in homogeneous materials either in the bulk or in films. In this work, we report for the first time that an emergent giant topological Hall effect (THE), associated with a noncoplanar (NC) spin texture, can be induced in ferromagnetic (FM) La0.7Sr0.3MnO3 thin films in a wide temperature range of up to 200 K by constructing La0.7Sr0.3MnO3/SrIrO3 epitaxial heterostructures on (001) SrTiO3 substrates. This THE is not observed in La0.7Sr0.3MnO3 single-layer films or La0.7Sr0.3MnO3/SrTiO3/SrIrO3 trilayer heterostructures, indicating the relevance of the La0.7Sr0.3MnO3/SrIrO3 interface, where the Dzyaloshinskii-Moriya interaction due to strong spin-orbital coupling in SrIrO3 may play a crucial role. The fictitious field associated with THE is independent of temperature in La0.7Sr0.3MnO3/SrIrO3 heterostructures, suggesting that the NC spin texture may be magnetic skyrmions. This work demonstrates the feasibility of using SrIrO3 to generate novel magnetic and transport characteristics by interfacing with other correlated oxides, which might be useful to novel spintronic applications.
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Affiliation(s)
| | - Lunyong Zhang
- Max Plank POSTECH Center for Complex Phase Materials , Max Planck POSTECH/Korea Research Initiative , Pohang 790-784 , Korea
- Max Planck Institute for Chemical Physics of Solids , Dresden 01187 , Germany
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
| | | | - Tieying Yang
- Shanghai Institute of Applied Physics , Chinese Academy of Sciences , Shanghai 201800 , China
| | | | - Lin Gu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics , Chinese Academy of Sciences , Beijing 100190 , China
- School of Physical Sciences , University of Chinese Academy of Sciences , Beijing 100190 , China
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Djohan Y, Azukizawa T, Patmawati, Sakai K, Yano Y, Sato F, Takahashi R, Yohda M, Maeda M, Kamiya N, Zako T. Molecular chaperone prefoldin-assisted biosynthesis of gold nanoparticles with improved size distribution and dispersion. Biomater Sci 2019; 7:1801-1804. [PMID: 30869657 DOI: 10.1039/c8bm01026a] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/18/2023]
Abstract
Here we report a novel aspect of molecular chaperone prefoldin (PFD) as a biomaterial in the biocatalytic synthesis of gold nanoparticles (AuNPs) using glycerol dehydrogenase (GLD). We found that PFD could inhibit the aggregation of AuNPs during the biosynthesis, leading to the formation of AuNPs with controlled size distribution.
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Affiliation(s)
- Yovita Djohan
- Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Motooka 744, Nishi-ku, Fukuoka 819-0395, Japan
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