MoTe2 p-n Homojunctions Defined by Ferroelectric Polarization

Object Motion Detection Enabled by Reconfigurable Neuromorphic Vision Sensor under Ferroelectric Modulation

Increasing the demand for object motion detection (OMD) requires shifts of reducing redundancy, heightened power efficiency, and precise programming capabilities to ensure consistency and accuracy. Drawing inspiration from object motion-sensitive ganglion cells, we propose an OMD vision sensor with a simple device structure of a WSe2 homojunction modulated by a ferroelectric copolymer. Under optical mode and intermediate ferroelectric modulation, the vision sensor can generate progressive and bidirectional photocurrents with discrete multistates under zero power consumption. This design enables reconfigurable devices to emulate long-term potentiation and depression for synaptic weights updating, which exhibit 82 states (more than 6 bits) with a uniform step of 6 pA. Such OMD devices also demonstrate nonvolatility, reversibility, symmetry, and ultrahigh linearity, achieving a fitted R2 of 0.999 and nonlinearity values of 0.01/-0.01. Thus, a vision sensor could implement motion detection by sensing only dynamic information based on the brightness difference between frames, while eliminating redundant data from static scenes. Additionally, the neural network utilizing a linear result can recognize the essential moving information with a high recognition accuracy of 96.8%. We also present the scalable potential via a uniform 3 × 3 neuromorphic vision sensor array. Our work offers a platform to achieve motion detection based on controllable and energy-efficient ferroelectric programmability.

Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications

Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3 heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Logic Computing Field-Effect Transistors Based on a Monolayer WSe2 Homojunction for the Semi-adder and Decoder

Two-dimensional reconfigurable field-effect transistors (FETs) are promising candidates for next-generation computing hardware. However, exploring the cascade design of FETs for logic computing remains challenging. Here, by using density functional theory combined with the nonequilibrium Green's function method, we design a 5 nm split-gate FET based on a monolayer WSe2 homojunction, which can implement dynamic polarity control in different gate configurations. The series array of two FETs shows a functional family of logic gates (NOR, AND, XOR, A̅B, and AB̅), and the semi-adder designed by the logic functions AND and XOR reduces the number of transistors by 66.7%. The parallel array of two FETs demonstrates reconfigurable logic gates with NAND/OR/A̅+B/A+B̅ quadruple functions, which can realize the decoding function of 00-11 in the decoder. The cascade design of the electrically tunable FETs helps to tackle the logic device downscaling and integration dilemmas.

In-Sublattice Carrier Transition Enabled Polarimetric Photodetectors with Reconfigurable Polarity Transition

Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb2Se3Br2 features an in-sublattice carrier transition preferred along Sb2Se3 chains. Leveraging on the in-sublattice carrier transition in the CdSb2Se3Br2/WSe2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/-∞→-1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics.

Room-Temperature Magneto-Photoresponse in All-2D Optoelectronic Devices for In-Sensor Vision Systems

Interplay between magnetism and photoelectric properties introduces the effective control of photoresponse in optoelectronic devices via magnetic field, termed as magneto-photoresponse. It enriches the application scenarios and shows potential to construct in-sensor vision systems for artificial intelligence with gate-free architecture. However, achieving a simultaneous existence of room-temperature magnetism and notable photoelectric properties in semiconductors is a great challenge. Here, the room-temperature magneto-photoresponse is accomplished in all-2D optoelectronic devices, employing 2D ferromagnet Fe3GaTe2 as the source and drain, with WSe2 forming the channel. The interplay between room-temperature magnetism and photoelectric properties is realized by introducing the unique magneto-band structure effect from 2D interface, resulting in magneto-tunable charge transfer between Fe3GaTe2 and WSe2. The photocurrent in this 2D optoelectronic device exhibits robust response to both the direction and amplitude of external magnetic fields. Utilizing constructed 2D optoelectronic devices with magneto-photoresponse, traditional gate-controlled phototransistors are replaced and a prototype in-sensor vision system with visual adaptation, significantly improving the recognition accuracy to over four times in low-contrast environments is established. These findings pave a way for achieving high-temperature magneto-photoresponse, thereby guiding the construction of robust in-sensor vision systems toward high performance and broad applications.

All-Optic Logical Operations Based on the Visible-Near Infrared Bipolar Optical Response

The burgeoning need for extensive data processing has sparked enthusiasm for the development of a novel optical logic gate platform. In this study, junction field-effect phototransistors based on molybdenum disulfide/Germanium (MoS2/Ge) heterojunctions are constructed as optical logic units. This device demonstrates a positive photoresponse that is attributed to the photoconductivity effect occurring upon irradiation with visible (Vis) light. Under the illumination of near-infrared (NIR) optics with wavelengths within the communication band, the device shows a negative photoresponse, which is associated with the interlayer Coulomb interactions. The current state of the device can be effectively modulated as different logical states by precisely tuning the wavelength and power density of the optical. Within a 3 × 3 MoS2/Ge phototransistor array, five essentially all-optical logic gates ("AND," "OR," "NAND," "NOT," and "NOR") can be achieved in every signal unit. Furthermore, three complex all-optical logical operations are demonstrated by integrating two MoS2/Ge phototransistors in series. Compared to electronic designs, these all-optical logic devices offer a significant reduction in transistor number, with savings of 50-94% when implementing the above-mentioned functions. These results present opportunities for the development of photonic chips with low power consumption, high fidelity, and large volumes.

Sandwiched WS2/MoTe2/WS2 Heterostructure with a Completely Depleted Interlayer for a Photodetector with Outstanding Detectivity

Photodetectors based on two-dimensional van der Waals (2D vdW) heterostructures with high detectivity and rapid response have emerged as promising candidates for next-generation imaging applications. However, the practical application of currently studied 2D vdW heterostructures faces challenges related to insufficient light absorption and inadequate separation of photocarriers. To address these challenges, we present a sandwiched WS2/MoTe2/WS2 heterostructure with a completely depleted interlayer, integrated on a mirror electrode, for a highly efficient photodetector. This well-designed structure enhances light-matter interactions while facilitating effective separation and rapid collection of photocarriers. The resulting photodetector exhibits a broadband photoresponse spanning from deep ultraviolet to near-infrared wavelengths. When operated in self-powered mode, the device demonstrates an exceptional response speed of 22/34 μs, along with an impressive detectivity of 8.27 × 1010 Jones under 635 nm illumination. Additionally, by applying a bias voltage of -1 V, the detectivity can be further increased to 1.49 × 1012 Jones, while still maintaining a rapid response speed of 180/190 μs. Leveraging these outstanding performance metrics, high-resolution visible-near-infrared light imaging has been successfully demonstrated using this device. Our findings provide valuable insights into the optimization of device architecture for diverse photoelectric applications.

Black Arsenic Phosphorus Mid-Wave Infrared Barrier Detector with High Detectivity at Room Temperature

The barrier structure is designed to enhance the operating temperature of the infrared detector, thereby improving the efficiency of collecting photogenerated carriers and reducing dark current generation, without suppressing the photocurrent. However, the development of barrier detectors using conventional materials is limited due to the strict requirements for lattice and band matching. In this study, a high-performance unipolar barrier detector is designed utilizing a black arsenic phosphorus/molybdenum disulfide/black phosphorus van der Waals heterojunction. The device exhibits a broad response bandwidth ranging from visible light to mid-wave infrared (520 nm to 4.6 µm), with a blackbody detectivity of 2.7 × 1010 cmHz-1/2 W-1 in the mid-wave infrared range at room temperature. Moreover, the optical absorption anisotropy of black arsenic phosphorus enables polarization resolution detection, achieving a polarization extinction ratio of 35.5 at 4.6 µm. Mid-wave infrared imaging of the device is successfully demonstrated at room temperature, highlighting the significant potential of barrier devices based on van der Waals heterojunctions in mid-wave infrared detection.

Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping

Diodes based on p-n junctions are fundamental building blocks for numerous circuits, including rectifiers, photovoltaic cells, light-emitting diodes (LEDs), and photodetectors. However, conventional doping techniques to form p- or n-type semiconductors introduce impurities that lead to Coulomb scattering. When it comes to low-dimensional materials, controllable and stable doping is challenging due to the feature of atomic thickness. Here, by selectively depositing dielectric layers of Y2O3 and AlN, direct formation of wafer-scale carbon-nanotube (CNT) diodes are demonstrated with high yield and spatial controllability. It is found that the oxygen interstitials in Y2O3, and the oxygen vacancy together with Al-Al bond in AlN/Y2O3 electrostatically modulate the intrinsic CNTs channel, which leads to p- and n-type conductance, respectively. These CNTs diodes exhibit a high rectification ratio (>104) and gate-tunable rectification behavior. Based on these results, we demonstrate the applicability of the diodes in electrostatic discharge (ESD) protection and photodetection.

Polarizable Nonvolatile Ferroelectric Gating in Monolayer MoS2 Phototransistors

Given the requirements for power and dimension scaling, modulating channel transport properties using high gate bias is unfavorable due to the introduction of severe leakages and large power dissipation. Hence, this work presents an ultrathin phototransistor with chemical-vapor-deposition-grown monolayer MoS2 as the channel and a 10.2 nm thick Al:HfO2 ferroelectric film as the dielectric. The proposed device is meticulously modulated utilizing an Al:HfO2 nanofilm, which passivates traps and suppresses charge Coulomb scattering with Al doping, efficiently improving carrier transport and inhibiting leakage current. Furthermore, a bipolar pulses excitable polarization method is developed to induce a nonvolatile electrostatic field. The MoS2 channel is fully depleted by the switchable and stable floating gate originating from remanent polarization, leading to a high detectivity of 2.05 × 1011 Jones per nanometer of gating layer (Jones nm-1) and photocurrent on/off ratio >104 nm-1, which are superior to the state-of-the-art phototransistors based on two-dimensional (2D) materials and ferroelectrics. The proposed polarizable nonvolatile ferroelectric gating in a monolayer MoS2 phototransistor promises a potential route toward ultrasensitive photodetectors with low power consumption that boast of high levels of integration.

Ferroelectric-Optoelectronic Hybrid System for Photodetection

Photodetectors (PDs), as functional devices based on photon-to-electron conversion, are an indispensable component for the next-generation Internet of Things system. The research of advanced and efficient PDs that meet the diverse demands is becoming a major task. Ferroelectric materials can develop a unique spontaneous polarization due to the symmetry-breaking of the unit cell, which is switchable under an external electric field. Ferroelectric polarization field has the intrinsic characteristics of non-volatilization and rewritability. Introducing ferroelectrics to effectively manipulate the band bending and carrier transport can be non-destructive and controllable in the ferroelectric-optoelectronic hybrid systems. Hence, ferroelectric integration offers a promising strategy for high-performance photoelectric detection. This paper reviews the fundamentals of optoelectronic and ferroelectric materials, and their interactions in hybrid photodetection systems. The first section introduces the characteristics and applications of typical optoelectronic and ferroelectric materials. Then, the interplay mechanisms, modulation effects, and typical device structures of ferroelectric-optoelectronic hybrid systems are discussed. Finally, in summary and perspective section, the progress of ferroelectrics integrated PDs is summed up and the challenges of ferroelectrics in the field of optoelectronics are considered.

Graphene Magnetoresistance Control by Photoferroelectric Substrate

Ultralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate

Tunable photovoltaic photodetectors are of significant relevance in the fields of programmable and neuromorphic optoelectronics. However, their widespread adoption is hindered by intricate architectural design and energy consumption challenges. This study employs a nonvolatile MoTe2/hexagonal boron nitride/graphene semifloating photodetector to address these issues. Programed with pulsed gate voltage, the MoTe2 channel can be reconfigured from an n+-n to a p-n homojunction and the photocurrent transition changes from negative to positive values. Scanning photocurrent mapping reveals that the negative and positive photocurrents are attributed to Schottky junction and p-n homojunction, respectively. In the p-n configuration, the device demonstrates self-driven, linear, rapid response (∼3 ms), and broadband sensitivity (from 405 to 1500 nm) for photodetection, with typical performances of responsivity at ∼0.5 A/W and detectivity ∼1.6 × 1012 Jones under 635 nm illumination. These outstanding photodetection capabilities emphasize the potential of the semifloating photodetector as a pioneering approach for advancing logical and nonvolatile optoelectronics.

Ferroelectric-defined reconfigurable homojunctions for in-memory sensing and computing

Recently, the increasing demand for data-centric applications is driving the elimination of image sensing, memory and computing unit interface, thus promising for latency- and energy-strict applications. Although dedicated electronic hardware has inspired the development of in-memory computing and in-sensor computing, folding the entire signal chain into one device remains challenging. Here an in-memory sensing and computing architecture is demonstrated using ferroelectric-defined reconfigurable two-dimensional photodiode arrays. High-level cognitive computing is realized based on the multiplications of light power and photoresponsivity through the photocurrent generation process and Kirchhoff's law. The weight is stored and programmed locally by the ferroelectric domains, enabling 51 (>5 bit) distinguishable weight states with linear, symmetric and reversible manipulation characteristics. Image recognition can be performed without any external memory and computing units. The three-in-one paradigm, integrating high-level computing, weight memorization and high-performance sensing, paves the way for a computing architecture with low energy consumption, low latency and reduced hardware overhead.

High performance self-powered photodetector based on van der Waals heterojunction

Self-powered photodetectors that do not require external power support are expected to play a key role in future photodetectors due to their low power characteristics, but achieving high responsivity remains a challenge. 2D van der Waals heterojunctions are a promising technology for high-performance self-powered photodetectors due to their excellent optical and electrical properties. Here, we fabricate a self-powered photodetector based on In2Se3/WSe2/ReS2van der Waals heterojunction self-powered photodetector. Due to the presence of ReS2layer, photocurrent is enhanced as a result of the increase in light absorption efficiency and the effective region for generating photogenerated carriers. The built-in electric field is enhanced by a negative 'back-gate voltage' along the p-n junction vertical direction generated by the electrons in the photo-generated electrons accumulation layer. Accordingly, the optical responsivity and the photoresponse speed of this heterojunction self-powered photodetector are greatly boosted. The proposed self-powered photodetector based on the In2Se3/WSe2/ReS2heterojunction exhibits a high responsivity of 438 mA W-1, which is 17 times higher compared to the In2Se3/WSe2photodetector, a self-powered current (1.1 nA) that is an order of magnitude higher than that of the In2Se3/WSe2photodetector, and a fast response time that is 250% faster. Thus the self-powered photodetector with a stronger built-in electric field and a wider depletion zone can provide a new technological support for the fabrication of high responsivity, low power consumption and high speed self-powered photodetectors based on van der Waals heterojunctions.

Nonvolatile magnetoelectric coupling in two-dimensional van der Waals sandwich heterostructure CuInP2S6/MnCl3/CuInP2S6

Electrical control of magnetism is of great interest for low-energy-consumption spintronic applications. Due to the recent experimental breakthrough in two-dimensional materials, with the absence of hanging bonds on the surface and strong tolerance for lattice mismatch, heterogeneous integration of different two-dimensional materials provides a new opportunity for coupling between different physical properties. Here, we report the realization of nonvolatile magnetoelectric coupling in vdW sandwich heterostructure CuInP2S6/MnCl3/CuInP2S6. Using first-principles calculations, we reveal that when interfacing with ferroelectric CuInP2S6, the Dirac half-metallic state of monolayer MnCl3 will be destroyed. Moreover, depending on the electrically polarized direction of CuInP2S6, MnCl3 can be a half-metal or a ferromagnetic semiconductor. We unveil that the obtained ferromagnetic semiconductor in MnCl3 can be attributed to the different gain and loss of electrons on the two adjacent Mn atoms due to the sublattice symmetry broken by interlayer coupling. The effects of interfacial magnetoelectric coupling on magnetic anisotropy and ferromagnetic Curie temperature of MnCl3 are also investigated, and a multiferroic memory based on this model is designed. Our work not only provides a promising way to design nonvolatile electrical control of magnetism but also renders monolayer MnCl3 an appealing platform for developing low-dimensional memory devices.

Highly Efficient Van Der Waals Heterojunction on Graphdiyne toward the High-Performance Photodetector

Graphdiyne (GDY), a new 2D material, has recently proven excellent performance in photodetector applications due to its direct bandgap and high mobility. Different from the zero-gap of graphene, these preeminent properties made GDY emerge as a rising star for solving the bottleneck of graphene-based inefficient heterojunction. Herein, a highly effective graphdiyne/molybdenum (GDY/MoS2 ) type-II heterojunction in a charge separation is reported toward a high-performance photodetector. Characterized by robust electron repulsion of alkyne-rich skeleton, the GDY based junction facilitates the effective electron-hole pairs separation and transfer. This results in significant suppression of Auger recombination up to six times at the GDY/MoS2 interface compared with the pristine materials owing to an ultrafast hot hole transfer from MoS2 to GDY. GDY/MoS2 device demonstrates notable photovoltaic behavior with a short-circuit current of -1.3 × 10-5 A and a large open-circuit voltage of 0.23 V under visible irradiation. As a positive-charge-attracting magnet, under illumination, alkyne-rich framework induces positive photogating effect on the neighboring MoS2 , further enhancing photocurrent. Consequently, the device exhibits broadband detection (453-1064 nm) with a maximum responsivity of 78.5 A W-1 and a high speed of 50 µs. Results open up a new promising strategy using GDY toward effective junction for future optoelectronic applications.

Infrared avalanche photodiodes from bulk to 2D materials

Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one-optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of AIIIBV, AIIBVI, and potential alternatives to formerly mentioned-"third wave" superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device's performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in AIIIBV APDs, such as AlInAsSb, which may be used in future optical communications, type-II superlattice (T2SLs, "Ga-based" and "Ga-free"), and 2D materials-based IR APDs. The latter-atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed AIIIBV APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs' performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs' active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~105 for MWIR [wavelength, λ = 4 μm, temperature, T = 10-180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance-sensitivity and low excess noise.

Ultrafast-Programmable 2D Homojunctions Based on van der Waals Heterostructures on a Silicon Substrate

The development of electrically ultrafast-programmable semiconductor homojunctions can lead to transformative multifunctional electronic devices. However, silicon-based homojunctions are not programmable so that alternative materials need to be explored. Here 2D, multi-functional, lateral homojunctions made of van der Waals heterostructures with a semi-floating-gate configuration on a p++ Si substrate feature atomically sharp interfaces and can be electrostatically programmed in nanoseconds, more than seven orders of magnitude faster than other 2D-based homojunctions. By applying voltage pulses with different polarities, lateral p-n, n+ -n and other types of homojunctions can be formed, varied, and reversed. The p-n homojunctions possess a high rectification ratio of up to ≈105 and can be dynamically switched between four distinct conduction states with the current spanning over nine orders of magnitude, enabling them to function as logic rectifiers, memories, and multi-valued logic inverters. Built on a p++ Si substrate, which acts as the control gate, the devices are compatible with Si technology.

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation

2D materials with atomic thickness display strong gate controllability and emerge as promising materials to build area-efficient electronic circuits. However, achieving the effective and nondestructive modulation of carrier density/type in 2D materials is still challenging because the introduction of dopants will greatly degrade the carrier transport via Coulomb scattering. Here, a strategy to control the polarity of tungsten diselenide (WSe₂ ) field-effect transistors (FETs) via introducing hexagonal boron nitride (h-BN) as the interfacial dielectric layer is devised. By modulating the h-BN thickness, the carrier type of WSe₂ FETs has been switched from hole to electron. The ultrathin body of WSe₂ , combined with the effective polarity control, together contribute to the versatile single-transistor logic gates, including NOR, AND, and XNOR gates, and the operation of only two transistors as a half adder in logic circuits. Compared with the use of 12 transistors based on static Si CMOS technology, the transistor number of the half adder is reduced by 83.3%. The unique carrier modulation approach has general applicability toward 2D logic gates and circuits for the improvement of area efficiency in logic computation.

Recent Advances in Ferroelectric-Enhanced Low-Dimensional Optoelectronic Devices

Ferroelectric (FE) materials, including BiFeO₃ , P(VDF-TrFE), and CuInP₂ S₆ , are a type of dielectric material with a unique, spontaneous electric polarization that can be reversed by applying an external electric field. The combination of FE and low-dimensional materials produces synergies, sparking significant research interest in solar cells, photodetectors (PDs), nonvolatile memory, and so on. The fundamental aspects of FE materials, including the origin of FE polarization, extrinsic FE materials, and FE polarization quantification are first discussed. Next, the state-of-the-art of FE-based optoelectronic devices is focused. How FE materials affect the energy band of channel materials and how device structures influence PD performance are also summarized. Finally, the future directions of this rapidly growing field are discussed.

Ferroelectric Domain Control of Nonlinear Light Polarization in MoS2 via PbZr0.2 Ti0.8 O3 Thin Films and Free-Standing Membranes

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) such as MoS₂ exhibit exceptionally strong nonlinear optical responses, while nanoscale control of the amplitude, polar orientation, and phase of the nonlinear light in TMDCs remains challenging. In this work, by interfacing monolayer MoS₂ with epitaxial PbZr_0.2 Ti_0.8 O₃ (PZT) thin films and free-standing PZT membranes, the amplitude and polarization of the second harmonic generation (SHG) signal are modulated via ferroelectric domain patterning, which demonstrates that PZT membranes can lead to in-operando programming of nonlinear light polarization. The interfacial coupling of the MoS₂ polar axis with either the out-of-plane polar domains of PZT or the in-plane polarization of domain walls tailors the SHG light polarization into different patterns with distinct symmetries, which are modeled via nonlinear electromagnetic theory. This study provides a new material platform that enables reconfigurable design of light polarization at the nanoscale, paving the path for developing novel optical information processing, smart light modulators, and integrated photonic circuits.

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal-organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions

Self-powered photodetectors have attracted widespread attention due to their low power consumption which can be driven by the built-in electric field instead of external power, but it is very difficult to achieve high responsivity and fast response speed concurrently. Here, a self-powered photodetector with light-induced electric field enhancement based on a 2D InSe/WSe₂ /SnS₂ van der Waals heterojunction is designed. The light-induced electric field derived from the photo-generated electrons of SnS₂ accumulated at the SnS₂ /WSe₂ interface produces an additional negative gate voltage applied to the WSe₂ layer, which enhances the built-in electric field in the InSe/WSe₂ /SnS₂ heterojunction. Accordingly, the photocurrent and photoresponse speed of the heterostructure device are largely improved. The self-powered photodetector based on the InSe/WSe₂ /SnS₂ heterostructure exhibits a high responsivity of 550 mA W^-1 , which is a 50 times increase compared to the InSe/WSe₂ photodetector, and the response speed (110/120 µs) is one order of magnitude faster than that of the InSe/WSe₂ photodetector. The high responsivity and fast speed are caused by the stronger built-in electric field modulated by a light-induced electric field, which can separate carriers effectively and reduce drift times. This device architecture can provide a new avenue to fabricate high-responsivity, fast self-power photodetectors by utilizing the van der Waals heterojunction.

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Two-dimensional van der Waals (2D vdW) material-based heterostructure devices have been widely studied for high-end electronic applications owing to their heterojunction properties. In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. These phenomena are interpreted as the operating behavior in two series-connected FETs, and they result from the gate-tunable contact capacity of the Gr-bridge layer. Multi-value logic inverters and frequency tripler circuits are successfully demonstrated using ambipolar semiconductors with narrow- and wide-bandgap materials as more advanced circuit applications based on non-classical transfer characteristics. Thus, we believe that our innovative and straightforward device structure engineering will be a promising technique for future multi-functional circuit applications of 2D nanoelectronics.

A Reconfigurable Two-WSe2 -Transistor Synaptic Cell for Reinforcement Learning

Reward-modulated spike-timing-dependent plasticity (R-STDP) is a brain-inspired reinforcement learning (RL) rule, exhibiting potential for decision-making tasks and artificial general intelligence. However, the hardware implementation of the reward-modulation process in R-STDP usually requires complicated Si complementary metal-oxide-semiconductor (CMOS) circuit design that causes high power consumption and large footprint. Here, a design with two synaptic transistors (2T) connected in a parallel structure is experimentally demonstrated. The 2T unit based on WSe₂ ferroelectric transistors exhibits reconfigurable polarity behavior, where one channel can be tuned as n-type and the other as p-type due to nonvolatile ferroelectric polarization. In this way, opposite synaptic weight update behaviors with multilevel (>6 bit) conductance states, ultralow nonlinearity (0.56/-1.23), and large G_max /G_min ratio of 30 are realized. By applying positive/negative reward to (anti-)STDP component of 2T cell, R-STDP learning rules are realized for training the spiking neural network and demonstrated to solve the classical cart-pole problem, exhibiting a way for realizing low-power (32 pJ per forward process) and highly area-efficient (100 µm² ) hardware chip for reinforcement learning.

High-Speed Transition-Metal Dichalcogenides Based Schottky Photodiodes for Visible and Infrared Light Communication

Due to their atomically ultrathin thickness, the development of high-performance transition-metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct from architectures adopted in conventional bulk semiconductor devices. Here, we demonstrate a field-induced Schottky barrier photodiode with three different TMDC materials, WSe₂, MoTe₂, and WS₂. Owing to the high gate efficiency of a high-κ dielectric film, the Schottky barrier at metal contacts is effectively modulated by external bias, giving rise to a strong diode-like rectifying characteristic with high current on/off ratio. The WSe₂ photodiode shows a linear dynamic range of 112 dB, a responsivity of 0.17 A/W, and response time of 8 ns. When this fast WSe₂ device is employed for visible light communication data linking, a maximum real-time data transmission rate of 110 Mbps is achieved. Meanwhile, infrared light communication was also realized with a maximum data rate of 30 Mbps using a field-induced MoTe₂ Schottky barrier photodiode as a light sensor. This work provides a general CMOS-compatible and controllable fabrication strategy for TMDC-based photodetectors.

Ferroelectric Polarized in Transistor Channel Polarity Modulation for Reward-Modulated Spike-Time-Dependent Plasticity Application

Reward signals reflect the developmental tendency of reinforcement learning (RL) agents. Reward-modulated spike-time-dependent plasticity (R-STDP) is an efficient and concise information processing feature in RL. However, the physical construction of R-STDP normally demands complex circuit design engineering, resulting in large power consumption and large area. In this work, we studied the role of ferroelectric polarization in the modulation of carbon nanotube transistor channel polarity. Furthermore, we applied a modulating channel method to construct a 2T synaptic component by spin-coating technology. Based on the nonvolatility of ferroelectric polarization, the synaptic component constructed has the characteristics of reconfigurable polarity. One channel could be modulated to n-type and the other to p-type. One modulated channel was used to perform the STDP function when the reward signal arrived, and the other modulated channel was used to perform the anti-STDP function when the punishment signal arrived. Finally, R-STDP learning rules are implemented on hardware. This work provides a strategy for hardware construction of RL.

P-Type 2D Semiconductors for Future Electronics

2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.

Ferroelectric Tuning of ZnO Ultraviolet Photodetectors

The ferroelectric field effect transistor (Fe-FET) is considered to be one of the most important low-power and high-performance devices. It is promising to combine a ferroelectric field effect with a photodetector to improve the photodetection performance. This study proposes a strategy for ZnO ultraviolet (UV) photodetectors regulated by a ferroelectric gate. The ZnO nanowire (NW) UV photodetector was tuned by a 2D CuInP₂S₆ (CIPS) ferroelectric gate, which decreased the dark current and enhanced the responsivity and detectivity to 2.40 × 10⁴ A/W and 7.17 × 10¹¹ Jones, respectively. This strategy was also applied to a ZnO film UV photodetector that was tuned by a P(VDF-TrFE) ferroelectric gate. Lower power consumption and higher performance can be enabled by ferroelectric tuning of ZnO ultraviolet photodetectors, providing new inspiration for the fabrication of high-performance photodetectors.

Remarkable ferroelectricity-modulated electronic and magnetic properties in a 2H-VS2/BiAlO3(0001) hybrid system

In the present work, a 2H-VS₂/BiAlO₃(0001) hybrid system is constructed to perform first-principles density functional theory (DFT) calculations. The results reveal that, in addition to the ionic-vdW interface coupling, the ferromagnetic semiconductive 2H-VS₂ monolayer on the ferroelectric BiAlO₃(0001) substrate exhibits n-type or p-type doping behavior and even half-metal characteristics. Furthermore, the magnetoelectric coefficient (α_S) for the 2H-VS₂/BiAlO₃(0001) structures can reach a value of 10^-10 G cm² V^-1 with ferroelectric polarization reversal. The estimated Curie temperatures (T_c) of the 2H-VS₂ monolayer on the BiAlO₃(0001) Z+ (positive), Z+↓ (polarization-reversed Z+), Z- (negative), and Z-↑ (polarization-reversed Z-) polar surfaces were found to be 176, 276, 266, and 87 K, respectively. This indicates that the magnetic properties of the 2H-VS₂ monolayer are remarkably tunable using a ferroelectric BiAlO₃(0001) knob. These important findings provide a distinctive treatment option for controllable and adjustable nanoelectronic, photoelectronic, and spintronic devices based on a 2H-VS₂ monolayer.

Momentum-matching and band-alignment van der Waals heterostructures for high-efficiency infrared photodetection

Two-dimensional (2D) infrared photodetectors always suffer from low quantum efficiency (QE) because of the limited atomically thin absorption. Here, we reported 2D black phosphorus (BP)/Bi₂O₂Se van der Waals (vdW) photodetectors with momentum-matching and band-alignment heterostructures to achieve high QE. The QE was largely improved by optimizing the generation, suppressing the recombination, and improving the collection of photocarriers. Note that momentum-matching BP/Bi₂O₂Se heterostructures in k-space lead to the highly efficient generation and transition of photocarriers. The recombination process can be largely suppressed by lattice mismatching-immune vdW interfaces. Furthermore, type II BP/Bi₂O₂Se vdW heterostructures could also assist fast transport and collection of photocarriers. By constructing momentum-matching and band-alignment heterostructures, a record-high QE of 84% at 1.3 micrometers and 76.5% at 2 micrometers have been achieved in BP/Bi₂O₂Se vdW photodetectors.

HgCdTe/black phosphorus van der Waals heterojunction for high-performance polarization-sensitive midwave infrared photodetector

New-generation infrared detectors call for higher operation temperature and polarization sensitivity. For traditional HgCdTe infrared detectors, the additional polarization optics and cryogenic cooling are necessary to achieve high-performance infrared polarization detection, while they can complicate this system and limit the integration. Here, a mixed-dimensional HgCdTe/black phosphorous van der Waals heterojunction photodiode is proposed for polarization-sensitive midwave infrared photodetection. Benefiting from van der Waals integration, type III broken-gap band alignment heterojunctions are achieved. Anisotropy optical properties of black phosphorous bring polarization sensitivity from visible light to midwave infrared without external optics. Our devices show an outstanding performance at room temperature without applied bias, with peak blackbody detectivity as high as 7.93 × 1010 cm Hz1/2 W-1 and average blackbody detectivity over 2.1 × 1010 cm Hz1/2 W-1 in midwave infrared region. This strategy offers a possible practical solution for next-generation infrared detector with high operation temperature, high performance, and multi-information acquisition.

Single-Walled Carbon Nanotube-Germanium Heterojunction for High-Performance Near-Infrared Photodetector

In this research, we report on a high-performance near-infrared (near-IR) photodetector based on single-walled carbon nanotube-germanium (SWCNT-Ge) heterojunction by assembling SWCNT films onto n-type Ge substrate with ozone treatment. The ozone doping enhances the conductivity of carbon nanotube films and the formed interfacial oxide layer (GeOx) suppresses the leakage current and carriers’ recombination. The responsivity and detectivity in the near-IR region are estimated to be 362 mA W−1 and 7.22 × 1011 cm Hz1/2 W−1, respectively, which are three times the value of the untreated device. Moreover, a rapid response time of ~11 μs is obtained simultaneously. These results suggest that the simple SWCNT-Ge structure and ozone treatment method might be utilized to fabricate high-performance and low-cost near-IR photodetectors.

Universal p-Type Doping via Lewis Acid for 2D Transition-Metal Dichalcogenides

Developing spatially controlled and universal p-type doping of transition-metal dichalcogenides (TMDs) is critical for optoelectronics. Here, a facile and universal p-doping strategy via Sn⁴⁺ ions exchanging is proposed and the p-doping of PdSe₂ is demonstrated systematically as the example. The polarity of PdSe₂ can be modulated from n-type to bipolar and p-type precisely by changing the concentration of SnCl₄ solution. The modulation effectively reduces the electron concentration and improves the work function by ∼72 meV. In addition, the solution-processable route makes the spatially controlled doping possible, which is demonstrated by constructing the lateral PdSe₂ p-n homojunction with rectification behavior and photovoltaic effect. This p-doping method has been further proved in modulating various TMDs including WSe₂, WS₂, ReSe₂, MoSe₂, MoTe₂, and PtSe₂. This spatially controlled and universal method based on Sn atoms substitution realizes p-type doping of TMDs.

Exciton Emissions in Bilayer WSe2 Tuned by the Ferroelectric Polymer

In this work, a hybrid structure of multilayer transition-metal dichalcogenides (TMDs) and a ferroelectric polymer is designed to achieve passive control of optical properties in situ. The electrical polarization in the ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) polymer can regulate the photoluminescence (PL) in bilayer WSe₂. The total PL emission intensity is substantially suppressed or enhanced under large gate voltage in bilayer WSe₂. This is because electrons transfer between the conduction band K valley and the conduction band Λ valley by the electrostatic field in the P(VDF-TrFE) polymer. This electron transfer further adjusts the proportion of direct and indirect excitons and, in turn, changes the overall optical radiation efficiency. We also illustrate that the engineered PL originates from the external electric-field-dependent transferred electron effect. The theoretical result matches the experimental data well. This work demonstrates a device platform in which passive regulation is achieved using 2D TMDs modulated by polarized ferroelectric materials.

Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing

In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS₂) and ambipolar (MoTe₂) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.

Discovery of Robust Ferroelectricity in 2D Defective Semiconductor α-Ga2 Se3

2D ferroelectrics with robust polar order in the atomic-scale thickness at room temperature are needed to miniaturize ferroelectric devices and tackle challenges imposed by traditional ferroelectrics. These materials usually have polar point group structure regarding as a prerequisite of ferroelectricity. Yet, to introduce polar structure into otherwise nonpolar 2D materials for producing ferroelectricity remains a challenge. Here, by combining first-principles calculations and experimental studies, it is reported that the native Ga vacancy-defects located in the asymmetrical sites in cubic defective semiconductor α-Ga₂ Se₃ can induce polar structure. Meanwhile, the induced polarization can be switched in a moderate energy barrier. The switched polarization is observed in 2D α-Ga₂ Se₃ nanoflakes of ≈4 nm with a high switching temperature up to 450 K. Such polarization switching could arise from the displacement of Ga vacancy between neighboring asymmetrical sites by applying an electric field. This work removes the point group limit for ferroelectricity, expanding the range of 2D ferroelectrics into the native defective semiconductors.

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices

2D layered materials (2DLMs) have come under the limelight of scientific and engineering research and broke new ground across a broad range of disciplines in the past decade. Nevertheless, the members of stoichiometric 2DLMs are relatively limited. This renders them incompetent to fulfill the multitudinous scenarios across the breadth of electronic and optoelectronic applications since the characteristics exhibited by a specific material are relatively monotonous and limited. Inspiringly, alloying of 2DLMs can markedly broaden the 2D family through composition modulation and it has ushered a whole new research domain: 2DLM alloy nano-electronics and nano-optoelectronics. This review begins with a comprehensive survey on synthetic technologies for the production of 2DLM alloys, which include chemical vapor transport, chemical vapor deposition, pulsed-laser deposition, and molecular beam epitaxy, spanning their development, as well as, advantages and disadvantages. Then, the up-to-date advances of 2DLM alloys in electronic devices are summarized. Subsequently, the up-to-date advances of 2DLM alloys in optoelectronic devices are summarized. In the end, the ongoing challenges of this emerging field are highlighted and the future opportunities are envisioned, which aim to navigate the coming exploration and fully exert the pivotal role of 2DLMs toward the next generation of electronic and optoelectronic devices.

Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications

Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.

Soft Ferroelectrics Enabling High-Performance Intelligent Photo Electronics

Soft ferroelectrics based on organic and organic-inorganic hybrid materials have gained much interest among researchers owing to their electrically programmable and remnant polarization. This allows for the development of numerous flexible, foldable, and stretchable nonvolatile memories, when combined with various crystal engineering approaches to optimize their performance. Soft ferroelectrics have been recently considered to have an important role in the emerging human-connected electronics that involve diverse photoelectronic elements, particularly those requiring precise programmable electric fields, such as tactile sensors, synaptic devices, displays, photodetectors, and solar cells for facile human-machine interaction, human safety, and sustainability. This paper provides a comprehensive review of the recent developments in soft ferroelectric materials with an emphasis on their ferroelectric switching principles and their potential application in human-connected intelligent electronics. Based on the origins of ferroelectric atomic and/or molecular switching, the soft ferroelectrics are categorized into seven subgroups. In this review, the efficiency of soft ferroelectrics with their distinct ferroelectric characteristics utilized in various human-connected electronic devices with programmable electric field is demonstrated. This review inspires further research to utilize the remarkable functionality of soft electronics.

Electrostatic Modulation and Mechanism of the Electronic Properties of Monolayer MoS2 via Ferroelectric BiAlO3(0001) Polar Surfaces

In the present work, first-principles density functional theory calculations were carried out to explore the intrinsic interface coupling and electrostatic modulation as well as the effect of ferroelectric polarization reversal in the MoS₂/BiAlO₃(0001) [MoS₂/BAO(0001)] hybrid system. In addition to the interaction mechanism of the large ionic-van der Waals (vdW) coupling, our results indicate that the electronic properties of monolayer MoS₂ on the BAO(0001) polar surface can be effectively modulated by reversing the ferroelectric polarization and/or engineering the domain structures of the substrate. Due to the unusual charge transfer between the MoS₂ overlayer and the down-polarized ferroelectric BAO(0001) substrate, in the final analysis, the physical mechanism determining the interfacial charge transfer in the MoS₂/BAO(0001) hybrid system is attributed to the specific band alignment between the clean BAO(0001) surface and the freestanding monolayer MoS₂. Furthermore, our study predicts that MoS₂-based ferroelectric field-effect transistors and various types of seamless p-i, n-i, p-n, p⁺-p, and n⁺-n homojunctions possessing an extremely steep built-in electric field can be fabricated by reversing the ferroelectric polarization and/or patterning the domain structure of the BAO(0001) substrate.

Mechanism, Material, Design, and Implementation Principle of Two-Dimensional Material Photodetectors

Two-dimensional (2D) materials may play an important role in future photodetectors due to their natural atom-thin body thickness, unique quantum confinement, and excellent electronic and photoelectric properties. Semimetallic graphene, semiconductor black phosphorus, and transition metal dichalcogenides possess flexible and adjustable bandgaps, which correspond to a wide interaction spectrum ranging from ultraviolet to terahertz. Nevertheless, their absorbance is relatively low, and it is difficult for a single material to cover a wide spectrum. Therefore, the combination of phototransistors based on 2D hybrid structures with other material platforms, such as quantum dots, organic materials, or plasma nanostructures, exhibit ultra-sensitive and broadband optical detection capabilities that cannot be ascribed to the individual constituents of the assembly. This article provides a comprehensive and systematic review of the recent research progress of 2D material photodetectors. First, the fundamental detection mechanism and key metrics of the 2D material photodetectors are introduced. Then, the latest developments in 2D material photodetectors are reviewed based on the strategies of photocurrent enhancement. Finally, a design and implementation principle for high-performance 2D material photodetectors is provided, together with the current challenges and future outlooks.

Hybrid System Combining Two-Dimensional Materials and Ferroelectrics and Its Application in Photodetection

Photodetectors are one of the most important components for a future "Internet-of-Things" information society. Compared to the mainstream semiconductor-based photodetectors, emerging devices based on two-dimensional (2D) materials and ferroelectrics as well as their hybrid systems have been extensively studied in recent decades due to their outstanding performances and related interesting physical, electrical, and optoelectronic phenomena. In this paper, we review the photodetection based on 2D materials and ferroelectric hybrid systems. The fundamentals of 2D and ferroelectric materials as well as the interaction in the hybrid system will be introduced. Ferroelectricity modulated optoelectronic properties in the hybrid system will be discussed in detail. After the basics and figures of merit of photodetectors are summarized, the 2D-ferroelectrics devices with different structures including p-n diodes, Schottky diodes, and field-effect transistors will be reviewed and compared. The polarization of ferroelectrics offers the possibility of the modulation and enhancement of the photodetection in the hybrid detectors, which will be discussed in depth. Finally, the challenges and perspectives of the photodetectors based on 2D ferroelectrics will be proposed. This Review outlines the important aspects of the recent development of the hybrid system of 2D and ferroelectric materials, which could interact with each other and thus lead to photodetectors with higher performances. Such a Review will be helpful for the research of emerging physical phenomena and for the design of multifunctional nanoscale electronic and optoelectronic devices.

Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics

Owing to their superior carrier mobility, strong light-matter interactions, and flexibility at the atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for application in electronic and optoelectronic devices, including rectifying diodes, transistors, memory, photodetectors, and light-emitting diodes. At the heart of these devices, Schottky, PN, and tunneling junctions are playing an essential role in defining device function. Intriguingly, the ultrathin thickness and unique van der Waals (vdW) interlayer coupling in 2D materials has rendered enormous opportunities for the design and tailoring of various 2D junctions, e.g. using Lego-like hetero-stacking, surface decoration, and field-effect modulation methods. Such flexibility has led to marvelous breakthroughs during the exploration of 2D electronics and optoelectronic devices. To advance further, it is imperative to provide an overview of existing strategies for the engineering of various 2D junctions for their integration in the future. Thus, in this review, we provide a comprehensive survey of previous efforts toward 2D Schottky, PN, and tunneling junctions, and the functional devices built from them. Though these junctions exhibit similar configurations, distinct strategies have been developed for their optimal figures of merit based on their working principles and functional purposes.

2D Homojunctions for Electronics and Optoelectronics

In the post-Moore era, 2D materials with rich physical properties have attracted widespread attention from the scientific and industrial communities. Among 2D materials, the 2D homojunctions are of great promise in designing novel electronic and optoelectronic devices due to their unique geometries and properties such as homogeneous components, perfect lattice matching, and efficient charge transfer at the interface. In this article, a pioneering review focusing on the structural design and device application of 2D homojunctions such as p-n homojunctions, heterophase homojunctions, and layer-engineered homojunctions is provided. The preparation strategies to construct 2D homojunctions including vapor-phase deposition, lithium intercalation, laser irradiation, chemical doping, electrostatic doping, and photodoping are summarized in detail. Specifically, a careful review on the applications of the 2D homojunctions in electronics (e.g., field-effect transistors, rectifiers, and inverters) and optoelectronics (e.g., light-emitting diodes, photovoltaics, and photodetectors) is provided. Eventually, the current challenges and future perspectives are commented for promoting the rapid development of 2D homojunctions.

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.