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Li C, Pan R, Gu C, Guo H, Li J. Reconfigurable Micro/Nano-Optical Devices Based on Phase Transitions: From Materials, Mechanisms to Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2306344. [PMID: 38489745 PMCID: PMC11132080 DOI: 10.1002/advs.202306344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Revised: 01/10/2024] [Indexed: 03/17/2024]
Abstract
In recent years, numerous efforts have been devoted to exploring innovative micro/nano-optical devices (MNODs) with reconfigurable functionality, which is highly significant because of the progressively increasing requirements for next-generation photonic systems. Fortunately, phase change materials (PCMs) provide an extremely competitive pathway to achieve this goal. The phase transitions induce significant changes to materials in optical, electrical properties or shapes, triggering great research interests in applying PCMs to reconfigurable micro/nano-optical devices (RMNODs). More specifically, the PCMs-based RMNODs can interact with incident light in on-demand or adaptive manners and thus realize unique functions. In this review, RMNODs based on phase transitions are systematically summarized and comprehensively overviewed from materials, phase change mechanisms to applications. The reconfigurable optical devices consisting of three kinds of typical PCMs are emphatically introduced, including chalcogenides, transition metal oxides, and shape memory alloys, highlighting the reversible state switch and dramatic contrast of optical responses along with designated utilities generated by phase transition. Finally, a comprehensive summary of the whole content is given, discussing the challenge and outlooking the potential development of the PCMs-based RMNODs in the future.
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Affiliation(s)
- Chensheng Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- CAS Key Laboratory of Vacuum PhysicsSchool of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Ruhao Pan
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
| | - Changzhi Gu
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- CAS Key Laboratory of Vacuum PhysicsSchool of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Haiming Guo
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- CAS Key Laboratory of Vacuum PhysicsSchool of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
| | - Junjie Li
- Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing100190China
- CAS Key Laboratory of Vacuum PhysicsSchool of Physical SciencesUniversity of Chinese Academy of SciencesBeijing100049China
- Songshan Lake Materials LaboratoryDongguanGuangdong523808China
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Scherrer M, Lee CW, Schmid H, Moselund KE. Single-Mode Laser in the Telecom Range by Deterministic Amplification of the Topological Interface Mode. ACS PHOTONICS 2024; 11:1006-1011. [PMID: 38523747 PMCID: PMC10958602 DOI: 10.1021/acsphotonics.3c01372] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Revised: 01/29/2024] [Accepted: 01/29/2024] [Indexed: 03/26/2024]
Abstract
Photonic integrated circuits are paving the way for novel on-chip functionalities with diverse applications in communication, computing, and beyond. The integration of on-chip light sources, especially single-mode lasers, is crucial for advancing those photonic chips to their full potential. Recently, novel concepts involving topological designs introduced a variety of options for tuning device properties, such as the desired single-mode emission. Here, we introduce a novel cavity design that allows amplification of the topological interface mode by deterministic placement of gain material within a topological lattice. The proposed design is experimentally implemented by a selective epitaxy process to achieve closely spaced Si and InGaAs nanorods embedded within the same layer. This results in the first demonstration of a single-mode laser in the telecom band using the concept of amplified topological modes without introducing artificial losses.
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Affiliation(s)
- Markus Scherrer
- Science
of Quantum and Information Technology, IBM
Research Europe-Zurich, 8803 Rüschlikon, Switzerland
| | - Chang-Won Lee
- Institute
of Advanced Optics and Photonics, Hanbat
National University, 34158 Daejeon, South
Korea
| | - Heinz Schmid
- Science
of Quantum and Information Technology, IBM
Research Europe-Zurich, 8803 Rüschlikon, Switzerland
| | - Kirsten E. Moselund
- Laboratory
of Nano and Quantum Technologies (LNQ), Paul Scherrer Institut (PSI), 5232 Villigen, Switzerland
- Integrated
Nanoscale Photonics and Optoelectronics Laboratory (INPhO), Ecole Polytechnique Fédérale de Lausanne
(EPFL), 1015 Lausanne, Switzerland
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3
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Abstract
The topological properties of an object, associated with an integer called the topological invariant, are global features that cannot change continuously but only through abrupt variations, hence granting them intrinsic robustness. Engineered metamaterials (MMs) can be tailored to support highly nontrivial topological properties of their band structure, relative to their electronic, electromagnetic, acoustic and mechanical response, representing one of the major breakthroughs in physics over the past decade. Here, we review the foundations and the latest advances of topological photonic and phononic MMs, whose nontrivial wave interactions have become of great interest to a broad range of science disciplines, such as classical and quantum chemistry. We first introduce the basic concepts, including the notion of topological charge and geometric phase. We then discuss the topology of natural electronic materials, before reviewing their photonic/phononic topological MM analogues, including 2D topological MMs with and without time-reversal symmetry, Floquet topological insulators, 3D, higher-order, non-Hermitian and nonlinear topological MMs. We also discuss the topological aspects of scattering anomalies, chemical reactions and polaritons. This work aims at connecting the recent advances of topological concepts throughout a broad range of scientific areas and it highlights opportunities offered by topological MMs for the chemistry community and beyond.
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Affiliation(s)
- Xiang Ni
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
- School of Physics and Electronics, Central South University, Changsha, Hunan 410083, China
| | - Simon Yves
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
| | - Alex Krasnok
- Department of Electrical and Computer Engineering, Florida International University, Miami, Florida 33174, USA
| | - Andrea Alù
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York, New York 10031, United States
- Department of Electrical Engineering, City College, The City University of New York, 160 Convent Avenue, New York, New York 10031, United States
- Physics Program, The Graduate Center, The City University of New York, 365 Fifth Avenue, New York, New York 10016, United States
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Su X, Pan Y, Gao D, Wang J, Yu H, Chen R, Guan B, Yang X, Wang Y, Wang L. Surface Vertical Multi-Emission Laser with Distributed Bragg Reflector Feedback from CsPbI 3 Quantum Dots. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:nano13101669. [PMID: 37242084 DOI: 10.3390/nano13101669] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/20/2023] [Revised: 05/03/2023] [Accepted: 05/12/2023] [Indexed: 05/28/2023]
Abstract
Quantum dots (QDs) laser has become an important way to solve micro-application problems in many fields. However, single wavelength distributed Bragg reflector (DBR) has many limitations in practical applications, such as signal transmission. How to realize multiwavelength DBR lasing output simply is a challenge. To achieve a stable multi-wavelength quantum dots laser in the near-infrared region, the perovskite CsPbI3 QDs laser with DBR structure is developed in this paper. A tetragonal crystal structure with complete bonding information and no defect is explained by X-ray diffractions (XRD) and Raman spectrum. The cross-section morphology of the DBR laser and the surface morphology of QDs is measured by scanning electron microscope (SEM) and transmission electron microscope (TEM), respectively. An elliptical light propagation field and a double wavelength laser radiation are obtained from the finite-difference time-domain (FDTD) simulation. The output of the three wavelength lasers at 770 nm, 823 nm, and 873 nm is measured. The emission time of a DBR laser is about 2 h, and the average fluorescence quantum yield is 60%. The cavity length selection and energy level model are put in place to clearly see the working mechanism. All the results suggest that an effective and stable CsPbI3 quantum dots DBR laser is realized.
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Affiliation(s)
- Xueqiong Su
- College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Yong Pan
- College of Science, Xi'an University of Architecture and Technology, Xi'an 710055, China
| | - Dongwen Gao
- College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Jin Wang
- College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Huimin Yu
- College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Ruixiang Chen
- College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
| | - Baolu Guan
- Key Laboratory of Opto-Electronics Technology, Ministry of Education, Faculty of Information Technology, Beijing University of Technology, Beijing 100124, China
| | - Xinyu Yang
- The College of Chemistry & Materials Engineering, WenZhou University, Wenzhou 325000, China
| | - Yimeng Wang
- The School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Li Wang
- College of Physics and Optoelectronics, Faculty of Science, Beijing University of Technology, Beijing 100124, China
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Zhong H, Yu Y, Zheng Z, Ding Z, Zhao X, Yang J, Wei Y, Chen Y, Yu S. Ultra-low threshold continuous-wave quantum dot mini-BIC lasers. LIGHT, SCIENCE & APPLICATIONS 2023; 12:100. [PMID: 37185331 PMCID: PMC10130040 DOI: 10.1038/s41377-023-01130-5] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 03/02/2023] [Accepted: 03/11/2023] [Indexed: 05/17/2023]
Abstract
Highly compact lasers with ultra-low threshold and single-mode continuous wave (CW) operation have been a long sought-after component for photonic integrated circuits (PICs). Photonic bound states in the continuum (BICs), due to their excellent ability of trapping light and enhancing light-matter interaction, have been investigated in lasing configurations combining various BIC cavities and optical gain materials. However, the realization of BIC laser with a highly compact size and an ultra-low CW threshold has remained elusive. We demonstrate room temperature CW BIC lasers in the 1310 nm O-band wavelength range, by fabricating a miniaturized BIC cavity in an InAs/GaAs epitaxial quantum dot (QD) gain membrane. By enabling effective trapping of both light and carriers in all three dimensions, ultra-low threshold of 12 μW (0.052 kW cm-2) is achieved at room temperature. Single-mode lasing is also realized in cavities as small as only 5 × 5 unit cells (~2.5 × 2.5 μm2 cavity size) with a mode volume of 1.16(λ/n)3. The maximum operation temperature reaches 70 °C with a characteristic temperature of T0 ~93.9 K. With its advantages in terms of a small footprint, ultra-low power consumption, and adaptability for integration, the mini-BIC lasers offer a perspective light source for future PICs aimed at high-capacity optical communications, sensing and quantum information.
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Affiliation(s)
- Hancheng Zhong
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Ying Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China.
| | - Ziyang Zheng
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Zhengqing Ding
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Xuebo Zhao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Jiawei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Yuming Wei
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, China
| | - Yingxin Chen
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China
| | - Siyuan Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China.
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Jang J, Jeong M, Lee J, Kim S, Yun H, Rho J. Planar Optical Cavities Hybridized with Low-Dimensional Light-Emitting Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203889. [PMID: 35861661 DOI: 10.1002/adma.202203889] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 07/11/2022] [Indexed: 06/15/2023]
Abstract
Low-dimensional light-emitting materials have been actively investigated due to their unprecedented optical and optoelectronic properties that are not observed in their bulk forms. However, the emission from low-dimensional light-emitting materials is generally weak and difficult to use in nanophotonic devices without being amplified and engineered by optical cavities. Along with studies on various planar optical cavities over the last decade, the physics of cavity-emitter interactions as well as various integration methods are investigated deeply. These integrations not only enhance the light-matter interaction of the emitters, but also provide opportunities for realizing nanophotonic devices based on the new physics allowed by low-dimensional emitters. In this review, the fundamentals, strengths and weaknesses of various planar optical resonators are first provided. Then, commonly used low-dimensional light-emitting materials such as 0D emitters (quantum dots and upconversion nanoparticles) and 2D emitters (transition-metal dichalcogenide and hexagonal boron nitride) are discussed. The integration of these emitters and cavities and the expect interplay between them are explained in the following chapters. Finally, a comprehensive discussion and outlook of nanoscale cavity-emitter integrated systems is provided.
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Affiliation(s)
- Jaehyuck Jang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Minsu Jeong
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jihae Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seokwoo Kim
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Huichang Yun
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Junsuk Rho
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- Department of Mechanical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
- POSCO-POSTECH-RIST Convergence Research Center for Flat Optics and Metaphotonics, Pohang, 37673, Republic of Korea
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7
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Doronin IV, Andrianov ES, Zyablovsky AA. Overcoming the Diffraction Limit on the Size of Dielectric Resonators Using an Amplifying Medium. PHYSICAL REVIEW LETTERS 2022; 129:133901. [PMID: 36206428 DOI: 10.1103/physrevlett.129.133901] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
Existing methods for the creation of subwavelength resonators use either structures with negative permittivity, by exploiting subwavelength plasmonic resonances, or dielectric structures with a high refractive index, which reduce the wavelength. Here, we provide an alternative to these two methods based on a modification of the modes of dielectric resonators by means of an active medium. On the example of the dielectric active layer of size substantially smaller than a half-wavelength of light, we demonstrate that there is a gain at exceeding of which the change in phase due to the reflection at the layer boundaries compensates the change in phase due to propagation over the layer. Above this value of the gain, an unconventional mode forms, in which the phase shift after a round-trip of the light is zero. We show that this mode can be exploited to create a laser, the size of which is much smaller than the wavelength of the generated light and scales inversely with the square of absolute value of the refractive index in the active medium. Our results pave the way to creation of dielectric lasers of subwavelength size.
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Affiliation(s)
- I V Doronin
- Dukhov Research Institute of Automatics, 22 Sushchevskaya, Moscow 127055, Russia and Moscow Institute of Physics and Technology, 9 Institutskiy pereulok, Moscow 141700, Russia
| | - E S Andrianov
- Dukhov Research Institute of Automatics, 22 Sushchevskaya, Moscow 127055, Russia and Moscow Institute of Physics and Technology, 9 Institutskiy pereulok, Moscow 141700, Russia
| | - A A Zyablovsky
- Dukhov Research Institute of Automatics, 22 Sushchevskaya, Moscow 127055, Russia and Moscow Institute of Physics and Technology, 9 Institutskiy pereulok, Moscow 141700, Russia
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8
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Operational regimes of lasers based on gain media with a large Raman scattering cross-section. Sci Rep 2022; 12:7588. [PMID: 35534608 PMCID: PMC9085860 DOI: 10.1038/s41598-022-11588-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/02/2022] [Accepted: 04/25/2022] [Indexed: 11/11/2022] Open
Abstract
We report on unusual regimes of operation of a laser with a gain medium with a large Raman scattering cross-section, which is often inherent in new types of gain media such as colloidal and epitaxial quantum dots and perovskite materials. These media are characterized by a strong electron–phonon coupling. Using the Fröhlich Hamiltonian to describe the electron–phonon coupling in such media, we analyze the operation of the system above the lasing threshold. We show that below a critical value of the Fröhlich constant, the laser can only operate in the conventional regime: namely, there are coherent cavity photons but no coherent phonons. Above the critical value, a new pump rate threshold appears. Above this threshold, either joint self-oscillations of coherent phonons in the gain medium and photons in a cavity or a chaotic regime are established. We also find a range of the values of the Fröhlich constant, the pump rate, and the resonator eigenfrequency, in which more than one dynamical regime of the system is stable. In this case the laser dynamics is determined by the initial values of the resonator field, the active medium polarization, the population inversion, and phonon amplitude.
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9
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Shang Y, Chen T, Ma T, Hao S, Lv W, Jia D, Yang C. Advanced lanthanide doped upconversion nanomaterials for lasing emission. J RARE EARTH 2022. [DOI: 10.1016/j.jre.2021.09.002] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/26/2022]
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10
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Enhanced Reflection of GaAs Nanowire Laser Using Short-Period, Symmetric Double Metal Grating Reflectors. NANOMATERIALS 2022; 12:nano12091482. [PMID: 35564191 PMCID: PMC9104391 DOI: 10.3390/nano12091482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/13/2022] [Revised: 04/09/2022] [Accepted: 04/25/2022] [Indexed: 11/16/2022]
Abstract
Owing to the high contrast of the refractive indices at the end facets of a nanowire, lasing emission can be achieved in an individual nanowire without external, reflected feedback. However, the reflection provided by the end facet is not high enough to lower the threshold gain, especially for nanowires with smaller diameters. This work proposes a novel structure of nanowire laser partially sandwiched in double Ag gratings. Compared to a nanowire with a single metal grating or without a grating, the parallel double metal gratings play the reflector role with higher reflectivity to enhance the round-trip feedback and reduce the threshold gain. The reflective properties are calculated using the finite elements method. Simulation results show that a high reflectivity of more than 90% can be achieved when the number of periods is more than 8. The reflectivity of double gratings is 2.4 times larger than that of the nanowire end facet for large nanowire diameters. When the nanowire has a small diameter of 150 nm, the reflectivity of double gratings is 17 times larger than that of the nanowire end facet. Compared to a single grating, the reflective performance of double gratings is much better. Owing to the highly reflective properties of the double gratings, nanowires partially sandwiched in the double gratings can realize lasing emission at a very low threshold gain, and the period of the grating can be very short to benefit on-chip interconnection systems.
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Zheng B, Fan J, Chen B, Qin X, Wang J, Wang F, Deng R, Liu X. Rare-Earth Doping in Nanostructured Inorganic Materials. Chem Rev 2022; 122:5519-5603. [PMID: 34989556 DOI: 10.1021/acs.chemrev.1c00644] [Citation(s) in RCA: 169] [Impact Index Per Article: 84.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Impurity doping is a promising method to impart new properties to various materials. Due to their unique optical, magnetic, and electrical properties, rare-earth ions have been extensively explored as active dopants in inorganic crystal lattices since the 18th century. Rare-earth doping can alter the crystallographic phase, morphology, and size, leading to tunable optical responses of doped nanomaterials. Moreover, rare-earth doping can control the ultimate electronic and catalytic performance of doped nanomaterials in a tunable and scalable manner, enabling significant improvements in energy harvesting and conversion. A better understanding of the critical role of rare-earth doping is a prerequisite for the development of an extensive repertoire of functional nanomaterials for practical applications. In this review, we highlight recent advances in rare-earth doping in inorganic nanomaterials and the associated applications in many fields. This review covers the key criteria for rare-earth doping, including basic electronic structures, lattice environments, and doping strategies, as well as fundamental design principles that enhance the electrical, optical, catalytic, and magnetic properties of the material. We also discuss future research directions and challenges in controlling rare-earth doping for new applications.
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Affiliation(s)
- Bingzhu Zheng
- State Key Laboratory of Silicon Materials, Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Jingyue Fan
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Bing Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, China
| | - Xian Qin
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Juan Wang
- Institute of Environmental Health, MOE Key Laboratory of Environmental Remediation and Ecosystem Health, College of Environmental & Resource Sciences, Zhejiang University, Hangzhou 310058, China
| | - Feng Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR 999077, China
| | - Renren Deng
- State Key Laboratory of Silicon Materials, Institute for Composites Science Innovation, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
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12
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Yang K, Yao X, Liu B, Ren B. Metallic Plasmonic Array Structures: Principles, Fabrications, Properties, and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2007988. [PMID: 34048123 DOI: 10.1002/adma.202007988] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2020] [Revised: 02/22/2021] [Indexed: 05/18/2023]
Abstract
The vast development of nanofabrication has spurred recent progress for the manipulation of light down to a region much smaller than the wavelength. Metallic plasmonic array structures are demonstrated to be the most powerful platform to realize controllable light-matter interactions and have found wide applications due to their rich and tunable optical performance through the morphology and parameter engineering. Here, various light-management mechanisms that may exist on metallic plasmonic array structures are described. Then, the typical techniques for fabrication of metallic plasmonic arrays are summarized. Next, some recent applications of plasmonic arrays are reviewed, including plasmonic sensing, surface-enhanced spectroscopies, plasmonic nanolasing, and perfect light absorption. Lastly, the existing challenges and perspectives for metallic plasmonic arrays are discussed. The aim is to provide guidance for future development of metallic plasmonic array structures.
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Affiliation(s)
- Kang Yang
- State Key Laboratory of Physical Chemistry of Solid Surfaces, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Xu Yao
- State Key Laboratory of Physical Chemistry of Solid Surfaces, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Bowen Liu
- State Key Laboratory of Physical Chemistry of Solid Surfaces, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China
| | - Bin Ren
- State Key Laboratory of Physical Chemistry of Solid Surfaces, The MOE Key Laboratory of Spectrochemical Analysis and Instrumentation, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen, 361005, China
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13
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Ahmad Kamal AS, Lin CC, Xing D, Lee YC, Wang Z, Chen MH, Ho YL, Chen CW, Delaunay JJ. Lithographic in-mold patterning for CsPbBr 3 nanocrystals distributed Bragg reflector single-mode laser. NANOSCALE 2021; 13:15830-15836. [PMID: 34516594 DOI: 10.1039/d1nr04543a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Extensive studies on lead halide perovskites have shown that these materials are excellent candidates as gain mediums. Recently, many efforts have been made to incorporate perovskite lasers in integrated optical circuits. Possible solutions would be to utilize standard lithography with an etching/lift-off process or a direct laser etching technique. However, due to the fragile nature of the lead halide perovskites which gives rise to significant material deterioration during the lithography and etching processes, realizing a small-size, low-roughness, and single-mode laser remains a challenge. Here, a lithographic in-mold patterning method realized by nanocrystal concentration control and a multi-step filling-drying process is proposed to demonstrate CsPbBr3 nanocrystals distributed-Bragg-reflector (DBR) waveguide lasers. This method realizes the patterning of the CsPbBr3 nanocrystal laser cavity and DBR grating without lift-off and etching processes, and the smallest fabricated structures are obtained in a few hundred nanometers. The single-mode lasing is demonstrated at room temperature with a threshold of 23.5 μJ cm-2. The smallest full width at half maximum FWHM of the laser output is 0.4 nm. Due to the fabrication process and the DBR laser geometry, the lasers can be fabricated in a compact array, which is important for incorporating perovskite-based lasers in complex optoelectronic circuits.
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Affiliation(s)
| | - Cheng-Chieh Lin
- International Graduate Program of Molecular Science and Technology (NTU-MST), Taiwan International Graduate Program, National Taiwan University and Academia Sinica, Taipei 10617, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Molecular Science and Technology Program, Taiwan International Graduate Program (TIGP), Academia Sinica, Taipei 11529, Taiwan
| | - Di Xing
- School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
| | - Yang-Chun Lee
- School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
| | - Zhiyu Wang
- School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
| | - Mu-Hsin Chen
- School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
| | - Ya-Lun Ho
- School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan.
| | - Chun-Wei Chen
- International Graduate Program of Molecular Science and Technology (NTU-MST), Taiwan International Graduate Program, National Taiwan University and Academia Sinica, Taipei 10617, Taiwan
- Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan
- Center of Atomic Initiative for New Materials (AI-MAT), National Taiwan University, Taipei 10617, Taiwan
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14
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Tripathi A, Kim HR, Tonkaev P, Lee SJ, Makarov SV, Kruk SS, Rybin MV, Park HG, Kivshar Y. Lasing Action from Anapole Metasurfaces. NANO LETTERS 2021; 21:6563-6568. [PMID: 34282919 DOI: 10.1021/acs.nanolett.1c01857] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We study active dielectric metasurfaces composed of two-dimensional arrays of split-nanodisk resonators fabricated in InGaAsP membranes with embedded quantum wells. Depending on the geometric parameters, such split-nanodisk resonators can operate in the optical anapole regime originating from an overlap of the electric dipole and toroidal dipole Mie-resonant optical modes, thus supporting strongly localized fields and high-Q resonances. We demonstrate room-temperature lasing from the anapole lattices of engineered active metasurfaces with low threshold and high coherence.
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Affiliation(s)
- Aditya Tripathi
- Nonlinear Physics Centre, Research School of Physics, Australian National University, Canberra ACT 2601, Australia
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Pavel Tonkaev
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Soon-Jae Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Sergey V Makarov
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
| | - Sergey S Kruk
- Nonlinear Physics Centre, Research School of Physics, Australian National University, Canberra ACT 2601, Australia
| | - Mikhail V Rybin
- School of Physics and Engineering, ITMO University, St. Petersburg 197101, Russia
- Ioffe Institute, St. Petersburg 194021, Russia
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea
| | - Yuri Kivshar
- Nonlinear Physics Centre, Research School of Physics, Australian National University, Canberra ACT 2601, Australia
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15
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Ultralow-threshold laser using super-bound states in the continuum. Nat Commun 2021; 12:4135. [PMID: 34226557 PMCID: PMC8257597 DOI: 10.1038/s41467-021-24502-0] [Citation(s) in RCA: 73] [Impact Index Per Article: 24.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Accepted: 06/22/2021] [Indexed: 11/09/2022] Open
Abstract
Wavelength-scale lasers provide promising applications through low power consumption requiring for optical cavities with increased quality factors. Cavity radiative losses can be suppressed strongly in the regime of optical bound states in the continuum; however, a finite size of the resonator limits the performance of bound states in the continuum as cavity modes for active nanophotonic devices. Here, we employ the concept of a supercavity mode created by merging symmetry-protected and accidental bound states in the continuum in the momentum space, and realize an efficient laser based on a finite-size cavity with a small footprint. We trace the evolution of lasing properties before and after the merging point by varying the lattice spacing, and we reveal this laser demonstrates the significantly reduced threshold, substantially increased quality factor, and shrunken far-field images. Our results provide a route for nanolasers with reduced out-of-plane losses in finite-size active nanodevices and improved lasing characteristics.
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16
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Xu Y, Wang W, Chen Z, Sui X, Wang A, Liang C, Chang J, Ma Y, Song L, Jiang W, Zhou J, Liu X, Zhang Y. A general strategy for semiconductor quantum dot production. NANOSCALE 2021; 13:8004-8011. [PMID: 33956919 DOI: 10.1039/d0nr09067k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Mass production of semiconductor quantum dots (QDs) from bulk materials is highly desired but far from being satisfactory. Herein, we report a general strategy to mechanically tailor semiconductor bulk materials into QDs. Semiconductor bulk materials are routinely available via simple chemical precipitation. From their bulk materials, a variety of semiconductor (e.g., lead sulfide (PbS), cadmium sulfide (CdS), copper sulfide (CuS), ferrous sulfide (FeS), and zinc sulfide (ZnS)) QDs are successfully produced in high yields (>15 wt%). This is achieved by a combination of silica-assisted ball-milling and sonication-assisted solvent treatment. The as-produced QDs show intrinsic characteristics and outstanding water solubility (up to 5 mg mL-1), facilitating their practical applications. The QD dispersions present remarkable photoluminescence (PL) with exciton-dependence and nanosecond (ns)-scale lifetimes. The QDs-poly(methyl methacrylate) (PMMA) hybrid thin films demonstrate exciting solid-state fluorescence and exceptional nonlinear saturation absorption (NSA). Absolute modulation depths of up to 58% and saturation intensities down to 0.40 MW cm-2 were obtained. Our strategy could be applied to any semiconductor bulk materials and therefore paves the way for the construction of the complete library of semiconductor QDs.
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Affiliation(s)
- Yuanqing Xu
- CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, P. R. China.
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17
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Sadreev AF. Interference traps waves in an open system: bound states in the continuum. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2021; 84:055901. [PMID: 33730696 DOI: 10.1088/1361-6633/abefb9] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2020] [Accepted: 03/17/2021] [Indexed: 05/22/2023]
Abstract
I review the four mechanisms of bound states in the continuum (BICs) in the application of microwave and acoustic cavities open to directional waveguides. The most simple are symmetry-protected BICs, which are localized inside the cavity because of the orthogonality of the eigenmodes to the propagating modes of waveguides. However, the most general and interesting is the Friedrich-Wintgen mechanism, when the BICs are the result of the fully destructive interference of outgoing resonant modes. The third type of BICs, Fabry-Perot BICs, occurs in a double resonator system when each resonator can serve as an ideal mirror. Finally, the accidental BICs can be realized in the open cavities with no symmetry like the open Sinai billiard in which the eigenmode of the resonator can become orthogonal to the continuum of the waveguide accidentally due to a smooth deformation of the eigenmode. We also review the one-dimensional systems in which the BICs occur owing to the fully destructive interference of two waves separated by spin or polarization or by paths in the Aharonov-Bohm rings. We make broad use of the method of effective non-Hermitian Hamiltonian equivalent to the coupled mode theory, which detects BICs by finding zero-width resonances.
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Affiliation(s)
- Almas F Sadreev
- Kirensky Institute of Physics, Federal Research Center KSC SB RAS, 660036 Krasnoyarsk, Russia
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18
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Hwang MS, Choi JH, Jeong KY, Kim KH, Kim HR, So JP, Lee HC, Kim J, Kwon SH, Park HG. Recent advances in nanocavities and their applications. Chem Commun (Camb) 2021; 57:4875-4885. [PMID: 33881425 DOI: 10.1039/d1cc01084k] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Abstract
High quality factor and small mode volume in nanocavities enable the demonstration of efficient nanophotonic devices with low power consumption, strong nonlinearity, and high modulation speed, due to the strong light-matter interaction. In this review, we focus on recent state-of-the-art nanocavities and their applications. We introduce single nanocavities including semiconductor nanowires, plasmonic cavities, and nanostructures based on quasi-bound states in the continuum (quasi-BIC), for laser, photovoltaic, and nonlinear applications. In addition, nanocavity arrays with unique feedback mechanisms, including BIC cavities, parity-time symmetry coupled cavities, and photonic topological cavities, are introduced for laser applications. These various cavity designs and underlying physics in single and array nanocavities are useful for the practical implementation of promising nanophotonic devices.
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Affiliation(s)
- Min-Soo Hwang
- Department of Physics, Korea University, Seoul 02841, Republic of Korea.
| | - Jae-Hyuck Choi
- Department of Physics, Korea University, Seoul 02841, Republic of Korea.
| | - Kwang-Yong Jeong
- Department of Physics, Korea University, Seoul 02841, Republic of Korea.
| | - Kyoung-Ho Kim
- Department of Physics, Chungbuk National University, Cheongju 28644, Republic of Korea
| | - Ha-Reem Kim
- Department of Physics, Korea University, Seoul 02841, Republic of Korea.
| | - Jae-Pil So
- Department of Physics, Korea University, Seoul 02841, Republic of Korea.
| | - Hoo-Cheol Lee
- Department of Physics, Korea University, Seoul 02841, Republic of Korea.
| | - Jungkil Kim
- Department of Physics, Jeju National University, Jeju 63243, Republic of Korea
| | - Soon-Hong Kwon
- Department of Physics, Chung-Ang University, Seoul 06974, Republic of Korea.
| | - Hong-Gyu Park
- Department of Physics, Korea University, Seoul 02841, Republic of Korea. and KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
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19
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Low threshold lasing emissions from a single upconversion nanocrystal. Nat Commun 2020; 11:6156. [PMID: 33262336 PMCID: PMC7708641 DOI: 10.1038/s41467-020-19797-4] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/27/2020] [Accepted: 10/21/2020] [Indexed: 11/08/2022] Open
Abstract
Cross-relaxation among neighboring emitters normally causes self-quenching and limits the brightness of luminescence. However, in nanomaterials, cross-relaxation could be well-controlled and employed for increasing the luminescence efficiency at specific wavelengths. Here we report that cross-relaxation can modulate both the brightness of single upconversion nanoparticles and the threshold to reach population inversion, and both are critical factors in producing the ultra-low threshold lasing emissions in a micro cavity laser. By homogenously coating a 5-μm cavity with a single layer of nanoparticles, we demonstrate that doping Tm3+ ions at 2% can facilitate the electron accumulation at the intermediate state of 3H4 level and efficiently decrease the lasing threshold by more than one order of magnitude. As a result, we demonstrate up-converted lasing emissions with an ultralow threshold of continuous-wave excitation of ~150 W/cm2 achieved at room temperature. A single nanoparticle can lase with a full width at half-maximum as narrow as ~0.45 nm.
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