Large-Area Uniform 1-nm-Level Amorphous Carbon Layers from 3D Conformal Polymer Brushes. A "Next-Generation" Cu Diffusion Barrier?

Corrosion-Resistant Ultrathin Cu Film Deposited on N-Doped Amorphous Carbon Film Substrate and Its Use for Crumpleable Circuit Board

Copper (Cu) is widely used as an industrial electrode due to its high electrical conductivity, mechanical properties, and cost-effectiveness. However, Cu is susceptible to corrosion, which degrades device performance over time. Although various methods (alloying, physical passivation, surface treatment, etc.) are introduced to address the corrosion issue, they can cause decreased conductivity or vertical insulation. Here, using the nitrogen-doped amorphous carbon (a-C:N) thin film is proposed as a substrate on which Cu is directly deposited. This simple method significantly inhibits corrosion of ultrathin Cu (<20 nm) films in humid conditions, enabling the fabrication of ultrathin electronic circuit boards without corrosion under ambient conditions. This study investigates the origin of corrosion resistance through comprehensive microscopic/spectroscopic characterizations and density-functional theory (DFT) calculations: i) diffusion of Cu atoms into the a-C:N driven by stable C-Cu-N bond formation, ii) diffusion of N atoms from the a-C:N to the Cu layer heading the top surface, which is the thermodynamically preferred location for N, and iii) the doped N atoms in Cu layer suppress the inclusion of O into the Cu lattice. By leveraging the ultrathinness and deformability of the circuit board, a transparent electrode and a crumpleable LED lighting device are demonstrated.

Fabrication of Large-Area Metal-on-Carbon Catalytic Condensers for Programmable Catalysis

Catalytic condensers stabilize charge on either side of a high-k dielectric film to modulate the electronic states of a catalytic layer for the electronic control of surface reactions. Here, carbon sputtering provided for fast, large-scale fabrication of metal-carbon catalytic condensers required for industrial application. Carbon films were sputtered on HfO2 dielectric/p-type Si with different thicknesses (1, 3, 6, and 10 nm), and the enhancement of conductance and capacitance of carbon films was observed upon increasing the carbon thickness following thermal treatment at 400 °C. After Pt deposition on the carbon films, the Pt catalytic condenser exhibited a high capacitance of ∼210 nF/cm2 that was maintained at a frequency ∼1000 Hz, satisfying the requirement for a dynamic catalyst to implement catalytic resonance. Temperature-programmed desorption of carbon monoxide yielded CO desorption peaks that shifted in temperature with the varying potential applied to the condenser (-6 or +6 V), indicating a shift in the binding energy of carbon monoxide on the Pt condenser surface. A substantial increase in capacitance (∼2000 nF/cm2) of the Pt-on-carbon devices was observed at elevated temperatures of 400 °C that can modulate ∼10% of charge per metal atom when 10 V potential was applied. A large catalytic condenser of 42 cm2 area Pt/C/HfO2/Si exhibited a high capacitance of 9393 nF with a low leakage current/capacitive current ratio (<0.1), demonstrating the practicality and versatility of the facile, large-scale fabrication method for metal-carbon catalytic condensers.

Unlocking More Potentials in Two-Dimensional Space: Disorder Engineering in Two-Dimensional Amorphous Carbon

The theory of the nature of glass has been described as the deepest but unsolved problem in solid state theory. The fundamental understanding of the structural characteristics of glassy materials and disorder-property correspondence remains incomplete due to difficulties in fully characterizing disordered structures in three-dimensional materials. Recently, two-dimensional amorphous materials were treated as an atomic-level playground to uncover previously unknown structure-property relationships in vitreous materials. Here, we summarize recent research on one prototypical material, two-dimensional amorphous carbon, including atomic structural characterizations, controllable synthesis, exotic properties, and application potentials. Fundamental discrepancies only induced by the amorphous nature, when compared with crystalline materials, will be highlighted. Finally, we discuss the restricted definition of two-dimensional amorphous carbon, existing challenges, and future research directions.

Amorphous Carbon Films for Electronic Applications

While various crystalline carbon allotropes, including graphene, have been actively investigated, amorphous carbon (a-C) thin films have received relatively little attention. The a-C is a disordered form of carbon bonding with a broad range of the CC bond length and bond angle. Although accurate structural analysis and theoretical approaches are still insufficient, reproducible structure-property relationships have been accumulated. As the a-C thin film is now adapted as a hardmask in the semiconductor industry and new properties are reported continuously, expectations are growing that it can be practically used as active materials beyond as a simple sacrificial layer. In this perspective review article, after a brief introduction to the synthesis and properties of the a-C thin films, their potential practical applications are proposed, including hardmasks, extreme ultraviolet (EUV) pellicles, diffusion barriers, deformable electrodes and interconnects, sensors, active layers, electrodes for energy, micro-supercapacitors, batteries, nanogenerators, electromagnetic interference (EMI) shielding, and nanomembranes. The article ends with a discussion on the technological challenges in a-C thin films.

Ultralow-Dielectric-Constant Atomic Layers of Amorphous Carbon Nitride Topologically Derived from MXene

Low-dielectric-constant materials such as silicon dioxide serving as interconnect insulators in current integrated circuit face a great challenge due to their relatively high dielectric constant of ≈4, twice that of the recommended value by the International Roadmap for Devices and Systems, causing severe parasitic capacitance and associated response delay. Here, novel atomic layers of amorphous carbon nitride (a-CN) are prepared via a topological conversion of MXene-Ti3 CNTx under bromine vapor. Remarkably, the assembled a-CN film exhibits an ultralow dielectric constant of 1.69 at 100 kHz, much lower than the previously reported dielectric materials such as amorphous carbon (2.2) and fluorinated-doped SiO2 (3.6), ascribed to the low density of 0.55 g cm-3 and high sp3 C level of 35.7%. Moreover, the a-CN film has a breakdown strength of 5.6 MV cm-1 , showing great potential in integrated circuit application.

Padmanabhan S, Davó-Quiñonero A, Darragh P, Senthamaraikannan R, Murphy B, Snelgrove M, McFeely C, Singh S, Conway J, O’Connor R, McGlynn E, Lundy R, Morris MA. Fabrication of High-κ Dielectric Metal Oxide Films on Topographically Patterned Substrates: Polymer Brush-Mediated Depositions

Fabrication of ultrathin films of dielectric (with particular reference to materials with high dielectric constants) materials has significance in many advanced technological applications including hard protective coatings, sensors, and next-generation logic devices. Current state-of-the-art in microelectronics for fabricating these thin films is a combination of atomic layer deposition and photolithography. As feature size decreases and aspect ratios increase, conformality of the films becomes paramount. Here, we show a polymer brush template-assisted deposition of highly conformal, ultrathin (sub 5 nm) high-κ dielectric metal oxide films (hafnium oxide and zirconium oxide) on topographically patterned silicon nitride substrates. This technique, using hydroxyl terminated poly-4-vinyl pyridine (P4VP-OH) as the polymer brush, allows for conformal deposition with uniform thickness along the trenches and sidewalls of the substrate. Metal salts are infiltrated into the grafted monolayer polymer brush films via solution deposition. Tailoring specific polymer interfacial chemistries for ion infiltration combined with subsequent oxygen plasma treatment enabled the fabrication of high-quality sub 5 nm metal oxide films.