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Sun Y, Meng X, Qin G. Optoelectronic neuron based on transistor combined with volatile threshold switching memristors for neuromorphic computing. J Colloid Interface Sci 2024; 678:325-335. [PMID: 39245022 DOI: 10.1016/j.jcis.2024.09.030] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2024] [Revised: 08/30/2024] [Accepted: 09/03/2024] [Indexed: 09/10/2024]
Abstract
The human perception and learning heavily rely on the visual system, where the retina plays a vital role in preprocessing visual information. Developing neuromorphic vision hardware is based on imitating the neurobiological functions of the retina. In this work, an optoelectronic neuron is developed by combining a gate-modulated PDVT-10 channel with a volatile threshold switching memristor, enabling the achievement of optoelectronic performance through a resistance-matching mechanism. The optoelectronic spiking neuron exhibits the ability to alter its spiking behavior in a manner resembling that of a retina. Incorporating electrical and optical modulation, the artificial neuron accurately replicates neuronal signal transmission in a biologically manner. Moreover, it demonstrates inhibition of neuronal firing during darkness and activation upon exposure to light. Finally, the evaluation of a perceptron spiking neural network utilizing these leaky integrate-and-fire neurons is conducted through simulation to assess its capability in classifying image recognition algorithms. This research offers a hopeful direction for the development of easily expandable and hierarchically structured spiking electronics, broadening the range of potential applications in biomimetic vision within the emerging field of neuromorphic hardware.
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Affiliation(s)
- Yanmei Sun
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China.
| | - Xinru Meng
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
| | - Gexun Qin
- School of Electronic Engineering, Heilongjiang University, Harbin 150080, China; Heilongjiang Provincial Key Laboratory of Micro-nano Sensitive Devices and Systems, Heilongjiang University, Harbin 150080, China
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2
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Ahsan R, Chae HU, Jalal SAA, Wu Z, Tao J, Das S, Liu H, Wu JB, Cronin SB, Wang H, Sideris C, Kapadia R. Ultralow Power In-Sensor Neuronal Computing with Oscillatory Retinal Neurons for Frequency-Multiplexed, Parallel Machine Vision. ACS NANO 2024; 18:23785-23796. [PMID: 39140995 DOI: 10.1021/acsnano.4c09055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
In-sensor and near-sensor computing architectures enable multiply accumulate operations to be carried out directly at the point of sensing. In-sensor architectures offer dramatic power and speed improvements over traditional von Neumann architectures by eliminating multiple analog-to-digital conversions, data storage, and data movement operations. Current in-sensor processing approaches rely on tunable sensors or additional weighting elements to perform linear functions such as multiply accumulate operations as the sensor acquires data. This work implements in-sensor computing with an oscillatory retinal neuron device that converts incident optical signals into voltage oscillations. A computing scheme is introduced based on the frequency shift of coupled oscillators that enables parallel, frequency multiplexed, nonlinear operations on the inputs. An experimentally implemented 3 × 3 focal plane array of coupled neurons shows that functions approximating edge detection, thresholding, and segmentation occur in parallel. An example of inference on handwritten digits from the MNIST database is also experimentally demonstrated with a 3 × 3 array of coupled neurons feeding into a single hidden layer neural network, approximating a liquid-state machine. Finally, the equivalent energy consumption to carry out image processing operations, including peripherals such as the Fourier transform circuits, is projected to be <20 fJ/OP, possibly reaching as low as 15 aJ/OP.
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Affiliation(s)
- Ragib Ahsan
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Hyun Uk Chae
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Seyedeh Atiyeh Abbasi Jalal
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Zezhi Wu
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Jun Tao
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Subrata Das
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Hefei Liu
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Jiang-Bin Wu
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Stephen B Cronin
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Han Wang
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Constantine Sideris
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Rehan Kapadia
- Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
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3
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Zhang K, Li H, Mu H, Li Y, Wang P, Wang Y, Chen T, Yuan J, Chen W, Yu W, Zhang G, Bao Q, Lin S. Spatially Resolved Light-Induced Ferroelectric Polarization in α-In 2Se 3/Te Heterojunctions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405233. [PMID: 39091054 DOI: 10.1002/adma.202405233] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/12/2024] [Revised: 07/13/2024] [Indexed: 08/04/2024]
Abstract
Light-induced ferroelectric polarization in 2D layered ferroelectric materials holds promise in photodetectors with multilevel current and reconfigurable capabilities. However, translating this potential into practical applications for high-density optoelectronic information storage remains challenging. In this work, an α-In2Se3/Te heterojunction design that demonstrates spatially resolved, multilevel, nonvolatile photoresponsivity is presented. Using photocurrent mapping, the spatially localized light-induced poling state (LIPS) is visualized in the junction region. This localized ferroelectric polarization induced by illumination enables the heterojunction to exhibit enhanced photoresponsivity. Unlike previous reports that observe multilevel polarization enhancement in electrical resistance, the device shows nonvolatile photoresponsivity enhancement under illumination. After polarization saturation, the photocurrent increases up to 1000 times, from 10-12 to 10-9 A under the irradiation of a 520 nm laser with a power of 1.69 nW, compared to the initial state in a self-driven mode. The photodetector exhibits high detectivity of 4.6×1010 Jones, with a rise time of 27 µs and a fall time of 28 µs. Furthermore, the device's localized poling characteristics and multilevel photoresponse enable spatially multiplexed optical information storage. These results advance the understanding of LIPS in 2D ferroelectric materials, paving the way for optoelectronic information storage technologies.
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Affiliation(s)
- Kai Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science & Guangzhou Key Laboratory of Spectral Analysis and Functional Probes, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Haozhe Li
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yun Li
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Pu Wang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yu Wang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Tongsheng Chen
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science & Guangzhou Key Laboratory of Spectral Analysis and Functional Probes, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Jian Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Weiqiang Chen
- MOE Key Laboratory of Laser Life Science & Guangdong Provincial Key Laboratory of Laser Life Science & Guangzhou Key Laboratory of Spectral Analysis and Functional Probes, College of Biophotonics, South China Normal University, Guangzhou, 510631, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
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4
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Lian M, Gao C, Lin Z, Shan L, Chen C, Zou Y, Cheng E, Liu C, Guo T, Chen W, Chen H. Towards mixed physical node reservoir computing: light-emitting synaptic reservoir system with dual photoelectric output. LIGHT, SCIENCE & APPLICATIONS 2024; 13:179. [PMID: 39085198 PMCID: PMC11291830 DOI: 10.1038/s41377-024-01516-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/25/2024] [Revised: 05/19/2024] [Accepted: 06/29/2024] [Indexed: 08/02/2024]
Abstract
Memristor-based physical reservoir computing holds significant potential for efficiently processing complex spatiotemporal data, which is crucial for advancing artificial intelligence. However, owing to the single physical node mapping characteristic of traditional memristor reservoir computing, it inevitably induces high repeatability of eigenvalues to a certain extent and significantly limits the efficiency and performance of memristor-based reservoir computing for complex tasks. Hence, this work firstly reports an artificial light-emitting synaptic (LES) device with dual photoelectric output for reservoir computing, and a reservoir system with mixed physical nodes is proposed. The system effectively transforms the input signal into two eigenvalue outputs using a mixed physical node reservoir comprising distinct physical quantities, namely optical output with nonlinear optical effects and electrical output with memory characteristics. Unlike previously reported memristor-based reservoir systems, which pursue rich reservoir states in one physical dimension, our mixed physical node reservoir system can obtain reservoir states in two physical dimensions with one input without increasing the number and types of devices. The recognition rate of the artificial light-emitting synaptic reservoir system can achieve 97.22% in MNIST recognition. Furthermore, the recognition task of multichannel images can be realized through the nonlinear mapping of the photoelectric dual reservoir, resulting in a recognition accuracy of 99.25%. The mixed physical node reservoir computing proposed in this work is promising for implementing the development of photoelectric mixed neural networks and material-algorithm collaborative design.
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Affiliation(s)
- Minrui Lian
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
| | - Changsong Gao
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Zhenyuan Lin
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
| | - Liuting Shan
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Cong Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Yi Zou
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Enping Cheng
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Changfei Liu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China
| | - Wei Chen
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou, 350207, China
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
- Department of Physics, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China.
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, 350100, China.
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5
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Rani A, Sultan MJ, Ren W, Bag A, Lee HJ, Lee NE, Kim TG. Bio-Inspired Photosensory Artificial Synapse Based on Functionalized Tellurium Multiropes for Neuromorphic Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310013. [PMID: 38477696 DOI: 10.1002/smll.202310013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 02/07/2024] [Indexed: 03/14/2024]
Abstract
Nanomaterials like graphene and transition metal dichalcogenides are being explored for developing artificial photosensory synapses with low-power optical plasticity and high retention time for practical nervous system implementation. However, few studies are conducted on Tellurium (Te)-based nanomaterials due to their direct and small bandgaps. This paper reports the superior photo-synaptic properties of covalently bonded Tellurium sulfur oxide (TeSOx) and Tellurium selenium oxide (TeSeOx)nanomaterials, which are fabricated by incorporating S and Se atoms on the surface of Te multiropes using vapor deposition. Unlike pure Te multiropes, the TeSOx and TeSeOx multiropes exhibit controllable temporal dynamics under optical stimulation. For example, the TeSOx multirope-based transistor displays a photosensory synaptic response to UV light (λ = 365 nm). Furthermore, the TeSeOx multirope-based transistor exhibits photosensory synaptic responses to UV-vis light (λ = 365, 565, and 660 nm), reliable electrical performance, and a combination of both photodetector and optical artificial synaptic properties with a maximum responsivity of 1500 AW-1 to 365 nm UV light. This result is among the highest reported for Te-heterostructure-based devices, enabling optical artificial synaptic applications with low voltage spikes (1 V) and low light intensity (21 µW cm-2), potentially useful for optical neuromorphic computing.
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Affiliation(s)
- Adila Rani
- Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - M Junaid Sultan
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Wanqi Ren
- Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Atanu Bag
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Ho Jin Lee
- Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Nae-Eung Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, Gyeonggi-do, 16419, Republic of Korea
| | - Tae Geun Kim
- Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul, 02841, Republic of Korea
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6
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Xia Y, Lin N, Zha J, Huang H, Zhang Y, Liu H, Tong J, Xu S, Yang P, Wang H, Zheng L, Zhang Z, Yang Z, Chen Y, Chan HP, Wang Z, Tan C. 2D Reconfigurable Memory Device Enabled by Defect Engineering for Multifunctional Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2403785. [PMID: 39007279 DOI: 10.1002/adma.202403785] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Revised: 06/26/2024] [Indexed: 07/16/2024]
Abstract
In this era of artificial intelligence and Internet of Things, emerging new computing paradigms such as in-sensor and in-memory computing call for both structurally simple and multifunctional memory devices. Although emerging two-dimensional (2D) memory devices provide promising solutions, the most reported devices either suffer from single functionalities or structural complexity. Here, this work reports a reconfigurable memory device (RMD) based on MoS2/CuInP2S6 heterostructure, which integrates the defect engineering-enabled interlayer defects and the ferroelectric polarization in CuInP2S6, to realize a simplified structure device for all-in-one sensing, memory and computing. The plasma treatment-induced defect engineering of the CuInP2S6 nanosheet effectively increases the interlayer defect density, which significantly enhances the charge-trapping ability in synergy with ferroelectric properties. The reported device not only can serve as a non-volatile electronic memory device, but also can be reconfigured into optoelectronic memory mode or synaptic mode after controlling the ferroelectric polarization states in CuInP2S6. When operated in optoelectronic memory mode, the all-in-one RMD could diagnose ophthalmic disease by segmenting vasculature within biological retinas. On the other hand, operating as an optoelectronic synapse, this work showcases in-sensor reservoir computing for gesture recognition with high energy efficiency.
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Affiliation(s)
- Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Ning Lin
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, 999077, China
| | - Jiajia Zha
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, 999077, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yiwen Zhang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Handa Liu
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Jinyi Tong
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Songcen Xu
- Department of Electrical and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, 518118, China
| | - Huide Wang
- College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Long Zheng
- Department of Chemistry, Chinese University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Zhengbao Yang
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Ye Chen
- Department of Chemistry, Chinese University of Hong Kong, Hong Kong SAR, 999077, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong SAR, 999077, China
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7
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Guo F, Liu Y, Zhang M, Yu W, Li S, Zhang B, Hu B, Li S, Sun A, Jiang J, Hao L. VO 2/MoO 3 Heterojunctions Artificial Optoelectronic Synapse Devices for Near-Infrared Optical Communication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2310767. [PMID: 38456772 DOI: 10.1002/smll.202310767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 02/23/2024] [Indexed: 03/09/2024]
Abstract
Artificial optoelectronic synapses (OES) have attracted extensive attention in brain-inspired information processing and neuromorphic computing. However, OES at near-infrared wavelengths have rarely been reported, seriously limiting the application in modern optical communication. Herein, high-performance near-infrared OES devices based on VO2/MoO3 heterojunctions are presented. The textured MoO3 films are deposited on the sputtered VO2 film by using the glancing-angle deposition technique to form a heterojunction device. Through tuning the oxygen defects in the VO2 film, the fabricated VO2/MoO3 heterojunction exhibits versatile electrical synaptic functions. Benefiting from the highly efficient light harvesting and the unique interface effect, the photonic synaptic characteristics, mainly including the short/long-term plasticity and learning experience behavior are successfully realized at the O (1342 nm) and C (1550 nm) optical communication wavebands. Moreover, a single OES device can output messages accurately by converting light signals of the Morse code to distinct synaptic currents. More importantly, a 3 × 3 artificial OES array is constructed to demonstrate the impressive image perceiving and learning capabilities. This work not only indicates the feasibility of defect and interface engineering in modulating the synaptic plasticity of OES devices, but also provides effective strategies to develop advanced artificial neuromorphic visual systems for next-generation optical communication systems.
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Affiliation(s)
- Fuhai Guo
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Yunjie Liu
- College of Science, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Mingcong Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Weizhuo Yu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Siqi Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bo Zhang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Bing Hu
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Shuangshuang Li
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Ankai Sun
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Jianyu Jiang
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
| | - Lanzhong Hao
- School of Materials Science and Engineering, China University of Petroleum, Qingdao, Shandong, 266580, China
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8
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Lee CW, Yoo C, Han SS, Song YJ, Kim SJ, Kim JH, Jung Y. Centimeter-Scale Tellurium Oxide Films for Artificial Optoelectronic Synapses with Broadband Responsiveness and Mechanical Flexibility. ACS NANO 2024; 18:18635-18649. [PMID: 38950148 DOI: 10.1021/acsnano.4c04851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/03/2024]
Abstract
Prevailing over the bottleneck of von Neumann computing has been significant attention due to the inevitableness of proceeding through enormous data volumes in current digital technologies. Inspired by the human brain's operational principle, the artificial synapse of neuromorphic computing has been explored as an emerging solution. Especially, the optoelectronic synapse is of growing interest as vision is an essential source of information in which dealing with optical stimuli is vital. Herein, flexible optoelectronic synaptic devices composed of centimeter-scale tellurium dioxide (TeO2) films detecting and exhibiting synaptic characteristics to broadband wavelengths are presented. The TeO2-based flexible devices demonstrate a comprehensive set of emulating basic optoelectronic synaptic characteristics; i.e., excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), conversion of short-term to long-term memory, and learning/forgetting. Furthermore, they feature linear and symmetric conductance synaptic weight updates at various wavelengths, which are applicable to broadband neuromorphic computations. Based on this large set of synaptic attributes, a variety of applications such as logistic functions or deep learning and image recognition as well as learning simulations are demonstrated. This work proposes a significant milestone of wafer-scale metal oxide semiconductor-based artificial synapses solely utilizing their optoelectronic features and mechanical flexibility, which is attractive toward scaled-up neuromorphic architectures.
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Affiliation(s)
- Chung Won Lee
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Changhyeon Yoo
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Yu-Jin Song
- Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, Republic of Korea
| | - Seung Ju Kim
- The Department of Electrical and Computer Engineering, University of Southern California, Los Angeles, California 90089, United States
| | - Jung Han Kim
- Department of Materials Science and Engineering, Dong-A University, Saha-Gu, Busan, 49315, Republic of Korea
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering and Department of Electrical and Computer Engineering, University of Central Florida, Orlando, Florida 32816, United States
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9
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Guo L, Sun H, Min L, Wang M, Cao F, Li L. Two-Terminal Perovskite Optoelectronic Synapse for Rapid Trained Neuromorphic Computation with High Accuracy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402253. [PMID: 38553842 DOI: 10.1002/adma.202402253] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2024] [Revised: 03/16/2024] [Indexed: 04/09/2024]
Abstract
Emerging neural morphological vision sensors inspired by biological systems that integrate image perception, memory, and information computing are expected to transform the landscape of machine vision and artificial intelligence. However, stable and reconfigurable light-induced synaptic behavior always relies on independent gateport modulation. Despite its potential, the limitations of uncontrollable defects and ionic characteristics have led to simpler, smaller, and more integration-friendly two-terminal devices being used as sidelines. In this work, the synergy between ion migration barriers and readout voltage is proven to be the key to realizing stable, reconfigurable, and precisely controllable postsynaptic current in two-terminal devices. Following the same mechanism, optical and electrical signal synchronous triggering is proposed to serve as a preprocessing method to achieve a recognition accuracy of 96.5%. Impressively, the gradual ion accumulation during the training process induces photocurrent evolution, serving as a reference for the dynamic learning rate and boosting accuracy to 97.8% in just 10 epochs. The PSC modulation potential under short optical pulse of 20 ns is also revealed. This optoelectronic device with perception, memory, and computation capabilities can promote the development of new devices for future photonic neural morphological circuits and artificial vision.
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Affiliation(s)
- Linqi Guo
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Meng Wang
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Fengren Cao
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, P. R. China
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10
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Chen C, Zhou Y, Tong L, Pang Y, Xu J. Emerging 2D Ferroelectric Devices for In-Sensor and In-Memory Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400332. [PMID: 38739927 DOI: 10.1002/adma.202400332] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/08/2024] [Revised: 04/19/2024] [Indexed: 05/16/2024]
Abstract
The quantity of sensor nodes within current computing systems is rapidly increasing in tandem with the sensing data. The presence of a bottleneck in data transmission between the sensors, computing, and memory units obstructs the system's efficiency and speed. To minimize the latency of data transmission between units, novel in-memory and in-sensor computing architectures are proposed as alternatives to the conventional von Neumann architecture, aiming for data-intensive sensing and computing applications. The integration of 2D materials and 2D ferroelectric materials has been expected to build these novel sensing and computing architectures due to the dangling-bond-free surface, ultra-fast polarization flipping, and ultra-low power consumption of the 2D ferroelectrics. Here, the recent progress of 2D ferroelectric devices for in-sensing and in-memory neuromorphic computing is reviewed. Experimental and theoretical progresses on 2D ferroelectric devices, including passive ferroelectrics-integrated 2D devices and active ferroelectrics-integrated 2D devices, are reviewed followed by the integration of perception, memory, and computing application. Notably, 2D ferroelectric devices have been used to simulate synaptic weights, neuronal model functions, and neural networks for image processing. As an emerging device configuration, 2D ferroelectric devices have the potential to expand into the sensor-memory and computing integration application field, leading to new possibilities for modern electronics.
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Affiliation(s)
- Chunsheng Chen
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yaoqiang Zhou
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Lei Tong
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Yue Pang
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Jianbin Xu
- Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China
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11
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Xu B, Guo D, Dong W, Gao H, Zhu P, Wang Z, Watanabe K, Taniguchi T, Luo Z, Zheng F, Zheng S, Zhou J. Gap State-Modulated Van Der Waals Short-Term Memory with Broad Band Negative Photoconductance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309626. [PMID: 38098431 DOI: 10.1002/smll.202309626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Revised: 11/05/2023] [Indexed: 05/25/2024]
Abstract
Floating gate memory (FGM), composed of van der Waals (vdW) junctions with an atomically thin floating layer for charge storage, is widely employed to develop logic-in memories and in-sensor computing devices. Most research efforts of FGM are spent on achieving long-term charge storage and fast reading/writing for flash and random-access memory. However, dynamic modulation of memory time via a tunneling barrier and vdW interfaces, which is critical for synaptic computing and machine vision, is still lacking. Here, a van der Waals short-term memory with tunable memory windows and retention times from milliseconds to thousands of seconds is reported, which is approximately exponentially proportional to the thickness h-BN (hexagonal boron nitride) barrier. The specific h-BN barrier with fruitful gap states provides charge release channels for trapped charges, making the vdW device switchable between positive photoconductance and negative photoconductance with a broadband light from IR to UV range. The dynamic short-term memory with tunable photo response highlights the design strategy of novel vdW memory vis interface engineering for further intelligent information storage and optoelectronic detection.
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Affiliation(s)
- Boyu Xu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dan Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Weikang Dong
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Huiying Gao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Peng Zhu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba, 303-0044, Japan
| | - Zhaochu Luo
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Fawei Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Jiadong Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
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12
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Song CM, Kim D, Lee S, Kwon HJ. Ferroelectric 2D SnS 2 Analog Synaptic FET. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308588. [PMID: 38375965 DOI: 10.1002/advs.202308588] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2023] [Revised: 01/25/2024] [Indexed: 02/21/2024]
Abstract
In this study, the development and characterization of 2D ferroelectric field-effect transistor (2D FeFET) devices are presented, utilizing nanoscale ferroelectric HfZrO2 (HZO) and 2D semiconductors. The fabricated device demonstrated multi-level data storage capabilities. It successfully emulated essential biological characteristics, including excitatory/inhibitory postsynaptic currents (EPSC/IPSC), Pair-Pulse Facilitation (PPF), and Spike-Timing Dependent Plasticity (STDP). Extensive endurance tests ensured robust stability (107 switching cycles, 105 s (extrapolated to 10 years)), excellent linearity, and high Gmax/Gmin ratio (>105), all of which are essential for realizing multi-level data states (>7-bit operation). Beyond mimicking synaptic functionalities, the device achieved a pattern recognition accuracy of ≈94% on the Modified National Institute of Standards and Technology (MNIST) handwritten dataset when incorporated into a neural network, demonstrating its potential as an effective component in neuromorphic systems. The successful implementation of the 2D FeFET device paves the way for the development of high-efficiency, ultralow-power neuromorphic hardware which is in sub-femtojoule (48 aJ/spike) and fast response (1 µs), which is 104 folds faster than human synapse (≈10 ms). The results of the research underline the potential of nanoscale ferroelectric and 2D materials in building the next generation of artificial intelligence technologies.
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Affiliation(s)
- Chong-Myeong Song
- Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea
| | - Dongha Kim
- Department of Physics and Chemistry, DGIST, Daegu, 42988, South Korea
| | - Shinbuhm Lee
- Department of Physics and Chemistry, DGIST, Daegu, 42988, South Korea
| | - Hyuk-Jun Kwon
- Department of Electrical Engineering and Computer Science, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, South Korea
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13
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Meng Y, Wang W, Wang W, Li B, Zhang Y, Ho J. Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2306290. [PMID: 37580311 DOI: 10.1002/adma.202306290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/29/2023] [Revised: 07/31/2023] [Indexed: 08/16/2023]
Abstract
Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.
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Affiliation(s)
- You Meng
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Weijun Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Bowen Li
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Johnny Ho
- Department of Materials Science and Engineering, State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
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14
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Wang J, Ilyas N, Ren Y, Ji Y, Li S, Li C, Liu F, Gu D, Ang KW. Technology and Integration Roadmap for Optoelectronic Memristor. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307393. [PMID: 37739413 DOI: 10.1002/adma.202307393] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/25/2023] [Revised: 09/10/2023] [Indexed: 09/24/2023]
Abstract
Optoelectronic memristors (OMs) have emerged as a promising optoelectronic Neuromorphic computing paradigm, opening up new opportunities for neurosynaptic devices and optoelectronic systems. These OMs possess a range of desirable features including minimal crosstalk, high bandwidth, low power consumption, zero latency, and the ability to replicate crucial neurological functions such as vision and optical memory. By incorporating large-scale parallel synaptic structures, OMs are anticipated to greatly enhance high-performance and low-power in-memory computing, effectively overcoming the limitations of the von Neumann bottleneck. However, progress in this field necessitates a comprehensive understanding of suitable structures and techniques for integrating low-dimensional materials into optoelectronic integrated circuit platforms. This review aims to offer a comprehensive overview of the fundamental performance, mechanisms, design of structures, applications, and integration roadmap of optoelectronic synaptic memristors. By establishing connections between materials, multilayer optoelectronic memristor units, and monolithic optoelectronic integrated circuits, this review seeks to provide insights into emerging technologies and future prospects that are expected to drive innovation and widespread adoption in the near future.
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Affiliation(s)
- Jinyong Wang
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Nasir Ilyas
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Yujing Ren
- Department of Chemical and Biomolecular Engineering, National University of Singapore, Singapore, 117585, Singapore
| | - Yun Ji
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Sifan Li
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
| | - Changcun Li
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Fucai Liu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Deen Gu
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 611731, P. R. China
| | - Kah-Wee Ang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
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15
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Zha J, Xia Y, Shi S, Huang H, Li S, Qian C, Wang H, Yang P, Zhang Z, Meng Y, Wang W, Yang Z, Yu H, Ho JC, Wang Z, Tan C. A 2D Heterostructure-Based Multifunctional Floating Gate Memory Device for Multimodal Reservoir Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2308502. [PMID: 37862005 DOI: 10.1002/adma.202308502] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Indexed: 10/21/2023]
Abstract
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials in recent years. As a rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) has been widely used in advanced electronics/optoelectronics. However, its application in floating gate (FG) memory devices for information processing has never been explored. Herein, an electronic/optoelectronic FG memory device enabled by Te-based 2D vdW heterostructure for multimodal reservoir computing (RC) is reported. When subjected to intense electrical/optical stimuli, the device exhibits impressive nonvolatile electronic memory behaviors including ≈108 extinction ratio, ≈100 ns switching speed, >4000 cycles, >4000-s retention stability, and nonvolatile multibit optoelectronic programmable characteristics. When the input stimuli weaken, the nonvolatile memory degrades into volatile memory. Leveraging these rich nonlinear dynamics, a multimodal RC system with high recognition accuracy of 90.77% for event-type multimodal handwritten digit-recognition is demonstrated.
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Affiliation(s)
- Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Shuhui Shi
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chen Qian
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Huide Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen, Guangdong, 518118, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Hong Kong SAR, 999077, China
| | - Hongyu Yu
- School of Microelectronics, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, 999077, China
| | - Zhongrui Wang
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
| | - Chaoliang Tan
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong SAR, 999077, China
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16
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Qiu D, Hou P. Ferroelectricity-Driven Self-Powered Weak Temperature and Broadband Light Detection in MoS 2/CuInP 2S 6/WSe 2 van der Waals Heterojunction Nanoarchitectonics. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59671-59680. [PMID: 38102080 DOI: 10.1021/acsami.3c12695] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Two-dimensional ferroelectric materials enrich the modulation degrees of freedom in self-powered van der Waals temperature/light detectors by incorporating pyroelectric and bulk photovoltaic effects. However, in addition to the low polarization, the practical applications of these materials are limited due to the significant challenge posed by their ultrathin nature, which affects their polarization stability. In this report, we introduce a design for a dual heterostructure-stabilized van der Waals heterojunction that addresses this challenge by improving the performance and extending the operational lifetime of self-powered van der Waals temperature/light detectors. The design is demonstrated using the MoS2/CuInP2S6 (CIPS)/WSe2 van der Waals heterojunction, which exhibits sensitivity to small temperature changes induced by weak light across the ultraviolet to mid-infrared spectrum. It can generate a noticeable pyroelectric current without the need for an external voltage, and its pyroelectric coefficient exceeds 130 and 978 μC/m2 K for 45 and 70 nm CIPS, respectively. The heterojunction offers high detection accuracy, with a temperature variation sensitivity as small as 0.1 K and an optical power intensity detection range from low to 1 μW/cm2. Additionally, the heterojunction exhibits exceptional detectivity (D*) for different light wavelengths. Remarkably, the self-powered detection performance remains stable for months without obvious degradation in the natural environment. These results offer a promising solution for high-performance, self-sustaining temperature/light detection applications and pave the way for the development of future ferroelectricity-driven photodetection technologies.
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Affiliation(s)
- Dan Qiu
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China
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17
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Lei Y, Xie X, Ma H, Ma J. Vitality of Intralayer Vibration in hBN for Effective Long-Range Interlayer Hole Transfer across High Barriers in MoSe 2/hBN/WSe 2 Heterostructures. J Phys Chem Lett 2023:11190-11199. [PMID: 38055859 DOI: 10.1021/acs.jpclett.3c03040] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/08/2023]
Abstract
Introducing the two-dimensional (2D) hexagonal boron nitride (hBN) between 2D transition metal dichalcogenide (TMD) layers promises convenient manipulation of the interlayer exciton (IX) and interlayer charge transfer in TMD/hBN/TMD heterostructures, while the role of inserted hBN layers during IX formation is controversial. Employing ab initio nonadiabatic molecular dynamics (NAMD) simulations and the electron-phonon coupling model, we systematically investigate interlayer hole transfer in MoSe2/WSe2 bilayers intercalated by hBN layers with various thicknesses. The conventional direct hole transfer from MoSe2 to WSe2 is decelerated by 2-3 orders of magnitude after the hBN insertion. Meanwhile, a novel channel intermediated by a deeper hole of WSe2 becomes dominant, where the intralayer shear mode of hBN plays a crucial role by reducing the energy barriers for this new channel. The unique role of hBN layers is revealed for the first time, enriching the knowledge of the underlying microscopic mechanisms and providing instructive guidance to practical van der Waals optoelectronic devices.
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Affiliation(s)
- Yuli Lei
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Xiaoyu Xie
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Haibo Ma
- Qingdao Institute for Theoretical and Computational Sciences, Qingdao Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao 266237, China
| | - Jing Ma
- Key Laboratory of Mesoscopic Chemistry of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
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18
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Zhu X, Zhang Y, Man Z, Lu W, Chen W, Xu J, Bao N, Chen W, Wu G. Microfluidic-Assembled Covalent Organic Frameworks@Ti 3 C 2 T x MXene Vertical Fibers for High-Performance Electrochemical Supercapacitors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2307186. [PMID: 37619540 DOI: 10.1002/adma.202307186] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/17/2023] [Indexed: 08/26/2023]
Abstract
The delicate design of innovative and sophisticated fibers with vertical porous skeleton and eminent electrochemical activity to generate directional ionic pathways and good faradic charge accessibility is pivotal but challenging for realizing high-performance fiber-shaped supercapacitors (FSCs). Here, hierarchically ordered hybrid fiber combined vertical-aligned and conductive Ti3 C2 Tx MXene (VA-Ti3 C2 Tx ) with interstratified electroactive covalent organic frameworks LZU1 (COF-LZU1) by one-step microfluidic synthesis is developed. Due to the incorporation of vertical channels, abundant redox active sites and large accessible surface area throughout the electrode, the VA-Ti3 C2 Tx @COF-LZU1 fibers express exceptional gravimetric capacitance of 787 F g-1 in a three-electrode system. Additionally, the solid-state asymmetric FSCs deliver a prominent energy density of 27 Wh kg-1 , capacitance of 398 F g-1 and cycling life of 20 000 cycles. The key to high energy storage ability originates from the decreased ions adsorption energy and ameliorative charge density distribution in vertically aligned and active hybrid fiber, accelerating ions transportation/accommodation and interfacial electrons transfer. Benefiting from excellent electrochemical performance, the FSCs offer sufficient energy supply to power watches, flags, and digital display tubes as well as be integrated with sensors to detect pulse signals, which opens a promising route for architecting advanced fiber toward the carbon neutrality market beyond energy-storage technology.
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Affiliation(s)
- Xiaolin Zhu
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
| | - Yang Zhang
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
| | - Zengming Man
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
| | - Wangyang Lu
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
| | - Wei Chen
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
| | - Jianhong Xu
- The State Key Laboratory of Chemical Engineering, Department of Chemical Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Ningzhong Bao
- State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University, Nanjing, 210009, P. R. China
| | - Wenxing Chen
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
| | - Guan Wu
- National Engineering Lab for Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou, 310018, P. R. China
- Zhejiang Provincial Innovation Center of Advanced Textile Technology, Zhejiang Sci-Tech University, Shaoxing, 312000, P. R. China
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19
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Rao A, Sanjay S, Dey V, Ahmadi M, Yadav P, Venugopalrao A, Bhat N, Kooi B, Raghavan S, Nukala P. Realizing avalanche criticality in neuromorphic networks on a 2D hBN platform. MATERIALS HORIZONS 2023; 10:5235-5245. [PMID: 37740285 DOI: 10.1039/d3mh01000g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/24/2023]
Abstract
Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics arise due to the critical nature and complex interconnectivity of the brain and its neuronal network. We demonstrate a system comprising of multilayer hexagonal boron nitride (hBN) films contacted with silver (Ag), which can uniquely host two different self-assembled networks, which are self-organized at criticality (SOC). This system shows bipolar resistive switching between the high resistance state (HRS) and the low resistance state (LRS). In the HRS, Ag clusters (nodes) intercalate in the van der Waals gaps of hBN forming a network of tunnel junctions, whereas the LRS contains a network of Ag filaments. The temporal avalanche dynamics in both these states exhibit power-law scaling, long-range temporal correlation, and SOC. These networks can be tuned from one to another with voltage as a control parameter. For the first time, two different neural networks are realized in a single CMOS compatible, 2D material platform.
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Affiliation(s)
- Ankit Rao
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Sooraj Sanjay
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Vivek Dey
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Majid Ahmadi
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
| | - Pramod Yadav
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Anirudh Venugopalrao
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Navakanta Bhat
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Bart Kooi
- Zernike Institute for Advanced Materials, University of Groningen, Groningen, The Netherlands
- CogniGron Center, University of Groningen, Groningen, 9747 AG, The Netherlands
| | - Srinivasan Raghavan
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
| | - Pavan Nukala
- Centre for Nano Science and Engineering, Indian Institute of Science, Bengaluru 560012, India.
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20
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Zhang G, Ma T, Wang B, Loke DK, Zhang Y. Editorial: Cutting-edge systems and materials for brain-inspired computing, adaptive bio-interfacing and smart sensing: implications for neuromorphic computing and biointegrated frameworks. Front Neurosci 2023; 17:1321387. [PMID: 37965223 PMCID: PMC10641009 DOI: 10.3389/fnins.2023.1321387] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Accepted: 10/16/2023] [Indexed: 11/16/2023] Open
Affiliation(s)
- Guobin Zhang
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang, China
| | - Teng Ma
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong SAR, China
| | - Bo Wang
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore, Singapore
| | - Desmond K. Loke
- Department of Science, Mathematics and Technology, Singapore University of Technology and Design, Singapore, Singapore
| | - Yishu Zhang
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang, China
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang, China
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21
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Xia Y, Zha J, Huang H, Wang H, Yang P, Zheng L, Zhang Z, Yang Z, Chen Y, Chan HP, Ho JC, Tan C. Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe 2-Based 2D van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:35196-35205. [PMID: 37459597 DOI: 10.1021/acsami.3c06316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
Although the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe2 in different phases as the charge-trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where a metallic 1T'-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T'-MoTe2 presents much better performance, including a larger memory window, faster switching speed (100 ns), and higher extinction ratio (107), than that of the device based on the MoS2/h-BN/2H-MoTe2 heterostructure. Moreover, the device based on the MoS2/h-BN/1T'-MoTe2 heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials.
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Affiliation(s)
- Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam 999077, Hong Kong SAR, China
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