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For: Lazar M, Wagner G. Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors. Cryst Res Technol 1997;32:111-24. [DOI: 10.1002/crat.2170320111] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Number Cited by Other Article(s)
1
Loubradou M, Bonnet R, Chen FR. Atomic structure of an unusual linear defect at the (001)InAs/(001)GaAs epitaxial interface. SURF INTERFACE ANAL 2000. [DOI: 10.1002/1096-9918(200008)30:1<616::aid-sia714>3.0.co;2-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
2
Wagner G. Misfit Strain Relaxation by Dislocations in InAs Islands and Layers Epitaxially Grown on (001)GaAs Substrates by MOVPE. CRYSTAL RESEARCH AND TECHNOLOGY 1998. [DOI: 10.1002/(sici)1521-4079(1998)33:5<681::aid-crat681>3.0.co;2-p] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
3
Wagner G. Defect Structure of Strained Heteroepitaxial In(1—x)Al(x)P Layers Deposited by MOVPE on (001) GaAs Substrates. CRYSTAL RESEARCH AND TECHNOLOGY 1998. [DOI: 10.1002/(sici)1521-4079(1998)33:3<383::aid-crat383>3.0.co;2-v] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/09/2022]
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