MOCVD of ZnO Films from Bis(Ketoiminato)Zn(II) Precursors: Structure, Morphology and Optical Properties

Synthetic and Structural Studies of Ethyl Zinc β-Amidoenoates and β-Ketoiminates

A set of heteroleptic ethyl zinc β-amidoenoates (1, 2) and β-ketoiminates (3) of the form [LZnEt]2 with varying steric bulk have been synthesised via the reaction of diethylzinc with β-aminoenoate ligands HL1 and HL2 and β-ketoimine HL3. These complexes have been characterised via 1H and 13C NMR, mass spectrometry and single-crystal X-ray diffraction, which unambiguously determined all three structures as dimeric species in the solid state. We observe the unusual dimerisation of 1 and 2 through coordination of the central zinc atom to the methine carbon of the second monomer, which gives these complexes high reactivity. The thermal properties of complex 3 are explored via thermal gravimetric analysis (TGA), to investigate their potential as single-source precursors to zinc oxide, which shows that 3 has a significantly lower decomposition temperature as compared to its bis-ligated counterpart [Zn(L3)2], which gives 3 promise as a single-source precursor to zinc oxide.

From Precursor Chemistry to Gas Sensors: Plasma-Enhanced Atomic Layer Deposition Process Engineering for Zinc Oxide Layers from a Nonpyrophoric Zinc Precursor for Gas Barrier and Sensor Applications

The identification of bis-3-(N,N-dimethylamino)propyl zinc ([Zn(DMP)₂ ], BDMPZ) as a safe and potential alternative to the highly pyrophoric diethyl zinc (DEZ) as atomic layer deposition (ALD) precursor for ZnO thin films is reported. Owing to the intramolecular stabilization, BDMPZ is a thermally stable, volatile, nonpyrophoric solid compound, however, it possesses a high reactivity due to the presence of Zn-C and Zn-N bonds in this complex. Employing this precursor, a new oxygen plasma enhanced (PE)ALD process in the deposition temperature range of 60 and 160 °C is developed. The resulting ZnO thin films are uniform, smooth, stoichiometric, and highly transparent. The deposition on polyethylene terephthalate (PET) at 60 °C results in dense and compact ZnO layers for a thickness as low as 7.5 nm with encouraging oxygen transmission rates (OTR) compared to the bare PET substrates. As a representative application of the ZnO layers, the gas sensing properties are investigated. A high response toward NO₂ is observed without cross-sensitivities against NH₃ and CO. Thus, the new PEALD process employing BDMPZ has the potential to be a safe substitute to the commonly used DEZ processes.

Synthesis of Mg and Zn diolates and their use in metal oxide deposition

The synthesis of complexes [M(OCHMeCH₂NMeCH₂)₂] (5, M = Mg; 7, M = Zn) is described. Treatment of MeHNCH₂CH₂NMeH (1) with 2-methyloxirane (2) gave diol (HOCHMeCH₂NMeCH₂)₂ (3), which upon reaction with equimolar amounts of MR₂ (4, M = Mg, R = Bu; 6, M = Zn, R = Et) gave 5 and 7. The thermal behavior and vapor pressure of 5 and 7 were investigated to show whether they are suited as CVD (= chemical vapor deposition) and/or spin-coating precursors for MgO or ZnO layer formation. Thermogravimetric (TG) studies revealed that 5 and 7 decompose between 80–530 °C forming MgO and ZnO as evidenced by PXRD studies. In addition, TG-MS-coupled experiments were carried out with 7 proving that decomposition occurs by M–O, C–O, C–N and C–C bond cleavages, as evidenced from the detection of fragments such as CH₄N⁺, C₂H₄N⁺, C₂H₅N⁺, CH₂O⁺, C₂H₂O⁺ and C₂H₃O⁺. The vapor pressure of 7 was measured at 10.4 mbar at 160 °C, while 5 is non-volatile. The layers obtained by CVD are dense and conformal with a somewhat granulated surface morphology as evidenced by SEM studies. In addition, spin–coating experiments using 5 and 7 as precursors were applied. The corresponding MO layer thicknesses are between 7–140 nm (CVD) or 80 nm and 65 nm (5, 7; spin-coating). EDX and XPS measurements confirm the formation of MgO and ZnO films, however, containing 12–24 mol% (CVD) or 5–9 mol% (spin-coating) carbon. GIXRD studies verify the crystalline character of the deposited layers obtained by CVD and the spin-coating processes.

Mg and Zn containing precursors for the generation of metal oxide layers by CVD and/or spin-coating are described.

WO3-decorated ZnO nanostructures for light-activated applications

Calyx-like ZnO nanostructures decorated by WO₃ nanoparticles are investigated for NO_X degradation and self-cleaning end-uses.

Molecular engineering of Ga-ketoiminates: synthesis, structure and evaluation as precursors for the additive-free spin-coated deposition of gallium oxide thin films

New gallium ketoiminate precursors with high solubility, favourable hydrolysis and decomposition route enabling additive free processing of Ga₂O₃ thin films.

Systematic molecular engineering of Zn-ketoiminates for application as precursors in atomic layer depositions of zinc oxide

Molecular engineering of zinc ketoiminates leads to the optimisation of precursor properties in terms of volatiltiy, reactivity and thermal stability, highly relevant for water assisted ALD of ZnO.

Novel β-ketoiminato complexes of zirconium: synthesis, characterization and evaluation for solution based processing of ZrO2 thin films

Treatment of tetrakis(diethylamido)zirconium(IV); [Zr(NEt2)4] with a series of β-ketoimines ({[RHN]C(CH3)=C(H)C(CH3)=O} where R is a functionalized side-chain; 4-(2-methoxyethylamino)pent-3-en-2-one, Hmeap; 4-(3-methoxypropylamino)pent-3-en-2-one, Hmpap; 4-(2-(dimethylamino)ethylamino)pent-3-en-2-one, Hdeap; 4-(3-(dimethylamino)propylamino)pent-3-en-2-one, Hdpap) leads to an amine substitution reaction that yielded novel monomeric heteroleptic mixed amido-ketoiminato complexes of the type bis(4-(2-methoxyethylamino)pent-3-en-2-onato)bis(diethylamido)zirconium(IV) (1), bis(4-(3-methoxypropylamino)pent-3-en-2-onato)bis(diethylamido)zirconium(IV) (2), and bis(4-(3-(dimethylamino)propylamino)pent-3-en-2-onato)bis(diethylamido)zirconium(IV) (3), and eight-coordinated homoleptic complexes tetrakis(4-(2-methoxyethylamino)pent-3-en-2-onato)zirconium(IV) (4) and tetrakis(4-(2-(dimethylamino)ethylamino)pent-3-en-2-onato)zirconium(IV) (5), depending on the ratio of the ligand to zirconium. Adopting a similar strategy with zirconium alkoxide, namely [Zr(O(i)Pr)4·(i)PrOH], with β-ketoimine Hmeap, leads to the formation of a dimer, bis(μ2-isopropoxo)bis(4-(2-methoxyethylamino)pent-3-en-2-onato)tetrakis(isopropoxo)dizirconium(IV) (6). The newly synthesised complexes were characterized by NMR spectroscopy, mass spectrometry, single crystal X-ray diffraction, elemental analysis and thermal analysis. The low decomposition temperature facilitated by the stepwise elimination of the ketominate ligand from the complex and the stability of the complexes obtained in air as well as in solution makes them highly suitable for solution based processing of ZrO2 thin films, which is demonstrated using compound 5 on Si(100) substrates. High quality ZrO2 films were obtained and were investigated for their structure, morphology, composition and optical properties. Low temperature crystallisation of ZrO2 is achieved by a simple chemical deposition process using the new class of Zr precursors and the films exhibit an optical transmittance above 90%.

Co3O4/ZnO nanocomposites: from plasma synthesis to gas sensing applications

Herein, we describe the design, fabrication and gas sensing tests of p-Co(3)O(4)/n-ZnO nanocomposites. Specifically, arrays of (001) oriented ZnO nanoparticles were grown on alumina substrates by plasma enhanced-chemical vapor deposition (PECVD) and used as templates for the subsequent PECVD of Co(3)O(4) nanograins. Structural, morphological and compositional analyses evidenced the successful formation of pure and high-area nanocomposites with a tailored overdispersion of Co(3)O(4) particles on ZnO and an intimate contact between the two oxides. Preliminary functional tests for the detection of flammable/toxic analytes (CH(3)COCH(3), CH(3)CH(2)OH, NO(2)) indicated promising sensing responses and the possibility of discriminating between reducing and oxidizing species as a function of the operating temperature.