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Ahn D, Song JD, Kang SS, Lim JY, Yang SH, Ko S, Park SH, Park SJ, Kim DS, Chang HJ, Chang J. Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodes. Sci Rep 2020; 10:3995. [PMID: 32132624 PMCID: PMC7055318 DOI: 10.1038/s41598-020-61021-2] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/11/2019] [Accepted: 01/17/2020] [Indexed: 11/25/2022] Open
Abstract
Cuprous halides, characterized by a direct wide band-gap and a good lattice matching with Si, is an intrinsic p-type I-VII compound semiconductor. It shows remarkable optoelectronic properties, including a large exciton binding energy at room temperature and a very small piezoelectric coefficient. The major obstacle to its application is the difficulty in growing a single-crystal epitaxial film of cuprous halides. We first demonstrate the single crystal epitaxy of high quality cuprous iodide (CuI) film grown on Si and sapphire substrates by molecular beam epitaxy. Enhanced photoluminescence on the order of magnitude larger than that of GaN and continuous-wave optically pumped lasing were found in MBE grown CuI film. The intrinsic p-type characteristics of CuI were confirmed using an n-AlGaN/p-CuI junction that emits blue light. The discovery will provide an alternative way towards highly efficient optoelectronic devices compatible with both Si and III-nitride technologies.
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Affiliation(s)
- D Ahn
- Peta Lux Inc., 3F TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do, 13438, Republic of Korea. .,Department of Electrical and Computer Engineering and Center for Quantum Information Processing, University of Seoul, 163 Seoulsiripdae-ro, Dongdaemun-gu, Seoul, 02504, Republic of Korea. .,Physics Department, Charles E. Schmidt College of Science, Florida Atlantic University, 777 Glades Road, Boca Raton, FL, 33431-0991, USA.
| | - J D Song
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology Hwarang-ro 14 gil, Seoungbuk-ku, Seoul, 02792, Republic of Korea.
| | - S S Kang
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology Hwarang-ro 14 gil, Seoungbuk-ku, Seoul, 02792, Republic of Korea.,Department of Physics, Kyung Hee University, 26 Kyungheedae-ro, Dongdaemun-gu, Seoul, 02447, Republic of Korea
| | - J Y Lim
- Peta Lux Inc., 3F TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do, 13438, Republic of Korea
| | - S H Yang
- Peta Lux Inc., 3F TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do, 13438, Republic of Korea
| | - S Ko
- Peta Lux Inc., 3F TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do, 13438, Republic of Korea
| | - S H Park
- Electronics Department, Catholic University of Daegu, 13 Hayang-Ro, Hayang-Eup, Gyeongsan-si, Gyeongbuk, 38430, Republic of Korea
| | - S J Park
- WONIK IPS, 75 Jinwisandan-ro, Jinwi-myeon, Pyeingtaek-si, Gyeonggi-do, 17709, Republic of Korea
| | - D S Kim
- TLi Inc., 10 F TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do, 13438, Republic of Korea
| | - H J Chang
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology Hwarang-ro 14 gil, Seoungbuk-ku, Seoul, 02792, Republic of Korea
| | - Joonyeon Chang
- Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology Hwarang-ro 14 gil, Seoungbuk-ku, Seoul, 02792, Republic of Korea. .,Department of Materials Science & Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea. .,Yonsei-KIST Convergence Research Institute, 50 Yonsei-ro, Seodaemun-gu, Seoul, 03722, Republic of Korea.
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Ahn D, Park SH. Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes. Sci Rep 2016; 6:20718. [PMID: 26880097 PMCID: PMC4754651 DOI: 10.1038/srep20718] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/16/2015] [Accepted: 01/11/2016] [Indexed: 11/09/2022] Open
Abstract
In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology.
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Affiliation(s)
- Doyeol Ahn
- Department of Electrical and Computer Engineering and Center for Quantum Information Processing, University of Seoul, Seoul 130-743, Republic of Korea.,Peta Lux Inc., 3F, TLi Building, 12 Yanghyeon-ro, 405 beon-gil, Jungwon-gu, Seongnam-si, Gyeonggi-do 462-100, Republic of Korea
| | - Seoung-Hwan Park
- Electronics Department, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Republic of Korea
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Zhang X, Liu W, Wei GZ, Banerjee D, Hu Z, Li J. Systematic Approach in Designing Rare-Earth-Free Hybrid Semiconductor Phosphors for General Lighting Applications. J Am Chem Soc 2014; 136:14230-6. [DOI: 10.1021/ja507927a] [Citation(s) in RCA: 148] [Impact Index Per Article: 14.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Affiliation(s)
- Xiao Zhang
- Department of Chemistry and
Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States
| | - Wei Liu
- Department of Chemistry and
Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States
| | - George Z. Wei
- Department of Chemistry and
Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States
| | - Debasis Banerjee
- Department of Chemistry and
Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States
| | - Zhichao Hu
- Department of Chemistry and
Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States
| | - Jing Li
- Department of Chemistry and
Chemical Biology, Rutgers University, 610 Taylor Road, Piscataway, New Jersey 08854, United States
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