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For: Nakada Y, Imura T. Effects of Dopants and Deformation Temperature on Stacking Fault Energy in GaAs. ACTA ACUST UNITED AC 1987. [DOI: 10.1002/pssa.2211020221] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Number Cited by Other Article(s)
1
Nikolaichick VI, Khodos II. A review of the determination of dislocation parameters using strong- and weak-beam electron microscopy. J Microsc 2011. [DOI: 10.1111/j.1365-2818.1989.tb02879.x] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
2
Takeuchi S, Suzuki K. Stacking Fault Energies of Tetrahedrally Coordinated Crystals. ACTA ACUST UNITED AC 1999. [DOI: 10.1002/(sici)1521-396x(199901)171:1<99::aid-pssa99>3.0.co;2-b] [Citation(s) in RCA: 82] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
3
Gerthsen D, Carter CB. Stacking-Fault Energies of GaAs. ACTA ACUST UNITED AC 1993. [DOI: 10.1002/pssa.2211360104] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
4
Cox G, Ebert P, Poppe U, Simon M, Urban K. Dislocation reaction on p-doped GaAs (011) observed by scanning tunnelling microscopy. Ultramicroscopy 1992. [DOI: 10.1016/0304-3991(92)90357-p] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
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