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Kwon JY, Kim JE, Kim JS, Chun SY, Soh K, Yoon JH. Artificial sensory system based on memristive devices. EXPLORATION (BEIJING, CHINA) 2024; 4:20220162. [PMID: 38854486 PMCID: PMC10867403 DOI: 10.1002/exp.20220162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/16/2023] [Indexed: 06/11/2024]
Abstract
In the biological nervous system, the integration and cooperation of parallel system of receptors, neurons, and synapses allow efficient detection and processing of intricate and disordered external information. Such systems acquire and process environmental data in real-time, efficiently handling complex tasks with minimal energy consumption. Memristors can mimic typical biological receptors, neurons, and synapses by implementing key features of neuronal signal-processing functions such as selective adaption in receptors, leaky integrate-and-fire in neurons, and synaptic plasticity in synapses. External stimuli are sensitively detected and filtered by "artificial receptors," encoded into spike signals via "artificial neurons," and integrated and stored through "artificial synapses." The high operational speed, low power consumption, and superior scalability of memristive devices make their integration with high-performance sensors a promising approach for creating integrated artificial sensory systems. These integrated systems can extract useful data from a large volume of raw data, facilitating real-time detection and processing of environmental information. This review explores the recent advances in memristor-based artificial sensory systems. The authors begin with the requirements of artificial sensory elements and then present an in-depth review of such elements demonstrated by memristive devices. Finally, the major challenges and opportunities in the development of memristor-based artificial sensory systems are discussed.
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Affiliation(s)
- Ju Young Kwon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
| | - Ji Eun Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jong Sung Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Suk Yeop Chun
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoulRepublic of Korea
| | - Keunho Soh
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
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Du C, Ren Y, Qu Z, Gao L, Zhai Y, Han ST, Zhou Y. Synaptic transistors and neuromorphic systems based on carbon nano-materials. NANOSCALE 2021; 13:7498-7522. [PMID: 33928966 DOI: 10.1039/d1nr00148e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
Carbon-based materials possessing a nanometer size and unique electrical properties perfectly address the two critical issues of transistors, the low power consumption and scalability, and are considered as a promising material in next-generation synaptic devices. In this review, carbon-based synaptic transistors were systematically summarized. In the carbon nanotube section, the synthesis of carbon nanotubes, purification of carbon nanotubes, the effect of architecture on the device performance and related carbon nanotube-based devices for neuromorphic computing were discussed. In the graphene section, the synthesis of graphene and its derivative, as well as graphene-based devices for neuromorphic computing, was systematically studied. Finally, the current challenges for carbon-based synaptic transistors were discussed.
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Affiliation(s)
- Chunyu Du
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yanyun Ren
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zhiyang Qu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Lili Gao
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.
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Yu J, Luo M, Lv Z, Huang S, Hsu HH, Kuo CC, Han ST, Zhou Y. Recent advances in optical and optoelectronic data storage based on luminescent nanomaterials. NANOSCALE 2020; 12:23391-23423. [PMID: 33227110 DOI: 10.1039/d0nr06719a] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The substantial amount of data generated every second in the big data age creates a pressing requirement for new and advanced data storage techniques. Luminescent nanomaterials (LNMs) not only possess the same optical properties as their bulk materials but also have unique electronic and mechanical characteristics due to the strong constraints of photons and electrons at the nanoscale, enabling the development of revolutionary methods for data storage with superhigh storage capacity, ultra-long working lifetime, and ultra-low power consumption. In this review, we investigate the latest achievements in LNMs for constructing next-generation data storage systems, with a focus on optical data storage and optoelectronic data storage. We summarize the LNMs used in data storage, namely upconversion nanomaterials, long persistence luminescent nanomaterials, and downconversion nanomaterials, and their applications in optical data storage and optoelectronic data storage. We conclude by discussing the superiority of the two types of data storage and survey the prospects for the field.
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Affiliation(s)
- Jinbo Yu
- Institute of Microscale Optoelectronics, Shenzhen University, 3688 Nanhai Road, Shenzhen, 518060, P.R. China.
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Lv Z, Wang Y, Chen J, Wang J, Zhou Y, Han ST. Semiconductor Quantum Dots for Memories and Neuromorphic Computing Systems. Chem Rev 2020; 120:3941-4006. [DOI: 10.1021/acs.chemrev.9b00730] [Citation(s) in RCA: 114] [Impact Index Per Article: 28.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Affiliation(s)
- Ziyu Lv
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingrui Chen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Junjie Wang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
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Hsieh YL, Su WH, Huang CC, Su CY. Solution-processed black phosphorus nanoflakes for integrating nonvolatile resistive random access memory and the mechanism unveiled. NANOTECHNOLOGY 2019; 30:445702. [PMID: 31349243 DOI: 10.1088/1361-6528/ab3606] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
In this study, we demonstrated the integration of black phosphorus (BP) nanoflakes in a resistive random access memory (RRAM) with a facile and complementary metal-oxide-semiconductor-compatible process. The solution-processed BP nanoflakes embedded in polystyrene (PS) as an active layer were sandwiched between aluminum electrodes (Al/BP:PS/Al). The device shows a figure of merit with typical bipolar behavior and forming-free characteristics as well as excellent memory performances such as nonvolatile, low operation voltage (1.75 V) and high ON/OFF ratio (>102) as well as the long retention time (>1500 s). The improved device performances were attributed to the formation of effective trap sites from the hybrid structure of the active layer (BP:PS), especially the BP nanoflakes and the partly oxidized species (P x O y ). Moreover, the extrinsic aluminum oxide layer was observed after the device operation. The mechanism of switching behavior was further unveiled through the carrier transport models, which confirms the conductive mechanisms of space-charge-limited current and Ohmic conductance at high resistance state (HRS) and low resistance state, respectively. Additionally, in the high electric field at HRS, the transfer curve was well fitted with the Poole-Frenkel emission model, which could be attributed to the formation of the aluminum oxide layer. Accordingly, both the trapping/de-trapping of carriers and the formation/rupture of conductive filaments were introduced as transport mechanisms in our devices. Although the partial P x O y species on BP were inevitable during the liquid phase exfoliation process, which was regarded as the disadvantages for various applications, it turns to a key point for improving performances in memory devices. The proposed approach to integrating BP nanoflakes in the active layer of the RRAM device could pave the way for next-generation memory devices.
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Affiliation(s)
- Yu-Ling Hsieh
- Dep. of Mechanical Engineering, National Central University, Tao-Yuan 32001, Taiwan
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Khurana G, Kumar N, Chhowalla M, Scott JF, Katiyar RS. Non-Polar and Complementary Resistive Switching Characteristics in Graphene Oxide devices with Gold Nanoparticles: Diverse Approach for Device Fabrication. Sci Rep 2019; 9:15103. [PMID: 31641183 PMCID: PMC6806005 DOI: 10.1038/s41598-019-51538-6] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/14/2019] [Accepted: 09/23/2019] [Indexed: 11/08/2022] Open
Abstract
Downscaling limitations and limited write/erase cycles in conventional charge-storage based non-volatile memories stimulate the development of emerging memory devices having enhanced performance. Resistive random-access memory (RRAM) devices are recognized as the next-generation memory devices for employment in artificial intelligence and neuromorphic computing, due to their smallest cell size, high write/erase speed and endurance. Unipolar and bipolar resistive switching characteristics in graphene oxide (GO) have been extensively studied in recent years, whereas the study of non-polar and complementary switching is scarce. Here we fabricated GO-based RRAM devices with gold nanoparticles (Au Nps). Diverse types of switching behavior are observed by changing the processing methods and device geometry. Tri-layer GO-based devices illustrated non-polar resistive switching, which is a combination of unipolar and bipolar switching. Five-layer GO-based devices depicted complementary resistive switching having the lowest current values ~12 µA; and this structure is capable of resolving the sneak path issue. Both devices show good retention and endurance performance. Au Nps in tri-layer devices assisted the conducting path, whereas in five-layer devices, Au Nps layer worked as common electrodes between co-joined cells. These GO-based devices with Au Nps comprising different configuration are vital for practical applications of emerging non-volatile resistive memories.
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Affiliation(s)
- Geetika Khurana
- Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, USA.
| | - Nitu Kumar
- Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, USA
- Western Digital Technologies, Inc. (SanDisk India Device Design Centre), Bangalore, India
| | - Manish Chhowalla
- Department of Materials Science & Metallurgy, University of Cambridge, Cambridge, UK
| | - James F Scott
- Department of Chemistry and Physics, University of St Andrews, St Andrews, UK
| | - Ram S Katiyar
- Department of Physics, University of Puerto Rico, San Juan, Puerto Rico, USA
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Jang J, Choi HH, Kim M, Kim JK, Chung S, Park JH. Self-erasable titanium oxide resistive memory devices. J IND ENG CHEM 2019. [DOI: 10.1016/j.jiec.2019.05.036] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/27/2022]
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Wu M, Hou P, Dong L, Cai L, Chen Z, Zhao M, Li J. Manganese dioxide nanosheets: from preparation to biomedical applications. Int J Nanomedicine 2019; 14:4781-4800. [PMID: 31308658 PMCID: PMC6613456 DOI: 10.2147/ijn.s207666] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2019] [Accepted: 05/23/2019] [Indexed: 12/15/2022] Open
Abstract
Advancements in nanotechnology and molecular biology have promoted the development of a diverse range of models to intervene in various disorders (from diagnosis to treatment and even theranostics). Manganese dioxide nanosheets (MnO2 NSs), a typical two-dimensional (2D) transition metal oxide of nanomaterial that possesses unique structure and distinct properties have been employed in multiple disciplines in recent decades, especially in the field of biomedicine, including biocatalysis, fluorescence sensing, magnetic resonance imaging and cargo-loading functionality. A brief overview of the different synthetic methodologies for MnO2 NSs and their state-of-the-art biomedical applications is presented below, as well as the challenges and future perspectives of MnO2 NSs.
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Affiliation(s)
- Muyu Wu
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China.,Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu, People's Republic of China
| | - Pingfu Hou
- Jiangsu Center for the Collaboration and Innovation of Cancer Biotherapy, Cancer Institute, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China
| | - Lina Dong
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China
| | - Lulu Cai
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China
| | - Zhudian Chen
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China
| | - Mingming Zhao
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China
| | - Jingjing Li
- School of Medical Imaging, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China.,Department of Radiology, Affiliated Hospital of Xuzhou Medical University, Xuzhou 221006, Jiangsu, People's Republic of China.,Institute of Medical Imaging and Digital Medicine, Xuzhou Medical University, Xuzhou 221004, Jiangsu, People's Republic of China
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Ivanov AI, Nebogatikova NA, Kotin IA, Smagulova SA, Antonova IV. Resistive switching effects in fluorinated graphene films with graphene quantum dots enhanced by polyvinyl alcohol. NANOTECHNOLOGY 2019; 30:255701. [PMID: 30836347 DOI: 10.1088/1361-6528/ab0cb3] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Two-layer films of partially fluorinated graphene (PFG) with graphene quantum dots and polyvinyl alcohol (PVA) were prepared by means of 2D printing technology. A stable resistive switching effect with the ON/OFF current ratio amounting from one to 4-5 orders of magnitude is found. The decrease in the PVA thickness leads to a change of the unipolar threshold switchings to the bipolar resistive switchings. The crossbar Ag/PFG/PVA/Ag structures retain their performance up to 6.5% deformation. The switching phenomenon is observed for a period about a year. The traps with characteristic activation energies ∼0.05 eV are suggested to be responsible for resistive switching. The time of charge-carrier emission from the localized states was found to be ∼5 μs. A quality model to describe the resistive switching effect in two-layer films implying the conduction over quantum dots proceeding with the participation of active traps at the PFG/PVA interface is proposed. The structures with the design demonstrated threshold resistive switching have their high potential for development of selector devices integrated to sensor or memristors circuits, for information storage and data processing, for flexible and wearable electronics. The structures with lower PVA thickness and the bipolar threshold switching are perspective for non-volatile memory cells for printed and flexible electronics.
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Affiliation(s)
- Artem I Ivanov
- Rzhanov Institute of Semiconductor Physics SB RAS, Lavrentiev av. 13, 630090, Novosibirsk, Russia
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10
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High-Performance Resistance-Switchable Multilayers of Graphene Oxide Blended with 1,3,4-Oxadiazole Acceptor Nanocomposite. MICROMACHINES 2019; 10:mi10020140. [PMID: 30791628 PMCID: PMC6412729 DOI: 10.3390/mi10020140] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/28/2019] [Revised: 02/14/2019] [Accepted: 02/18/2019] [Indexed: 11/24/2022]
Abstract
Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory arrays. Uncontrollable oxygen functional groups of GO, however, restrict its application. To obtain stable memory performance, 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) a that can serve as 1,3,4-oxadiazole acceptor was carefully introduced onto the GO framework. Better stability was achieved by increasing the weight ratio of the chemical component from 2:1 to 10:1 in all GO-based solutions. Particularly, rewritable nonvolatile memory characteristics were dependent on the ratio between PBD and GO. PBD:GO devices with a proportion of 10:1 w/w exhibited better memory performance, possessed a higher ON/OFF ratio (>102) at a lower switching voltage of −0.67 V, and had a long retention ability. The interaction between PBD and GO can be demonstrated by transmission electron microscope, scanning electron microscope, thermogravimetric analysis, fourier transform infrared spectra, Raman spectra, X-ray diffraction, and fluorescence spectra. The superior ReRAM properties of the multilayers of GO blended with the PBD nanocomposite are attributed to electron traps caused by the strong electron acceptors.
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Kim S, Jung HJ, Kim JC, Lee KS, Park SS, Dravid VP, He K, Jeong HY. In Situ Observation of Resistive Switching in an Asymmetric Graphene Oxide Bilayer Structure. ACS NANO 2018; 12:7335-7342. [PMID: 29985600 DOI: 10.1021/acsnano.8b03806] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Graphene oxide decorated with oxygen functional groups is a promising candidate as an active layer in resistive switching devices due to its controllable physical-chemical properties, high flexibility, and transparency. However, the origin of conductive channels and their growth dynamics remain a major challenge. We use in situ transmission electron microscopy techniques to demonstrate that nanoscale graphene oxide sheets bonded with oxygen dynamically change their physical and chemical structures upon an applied electric field. Artificially engineered bilayer reduced graphene oxide films with asymmetric oxygen content exhibit nonvolatile write-once-read-many memory behaviors without experiencing the bubble destruction due to the efficient migration of oxygen ions. We clearly observe that a conductive graphitic channel with a conical shape evolves from the upper oxygen-rich region to the lower oxygen-poor region. These findings provide fundamental guidance for understanding the oxygen motions of oxygen-containing carbon materials for future carbon-based nanoelectronics.
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Affiliation(s)
- Sungkyu Kim
- Department of Materials Science and Engineering and NUANCE Center , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Materials Science and Engineering , Clemson University , Clemson , South Carolina 29634 , United States
| | - Hee Joon Jung
- Department of Materials Science and Engineering and NUANCE Center , Northwestern University , Evanston , Illinois 60208 , United States
- International Institute of Nanotechnology, Evanston , Illinois 60208 , United States
| | - Jong Chan Kim
- School of Materials Science and Engineering , UNIST , Ulsan 44919 , Republic of Korea
| | - Kyung-Sun Lee
- UNIST Central Research Facilities (UCRF) , UNIST , Ulsan 44919 , Republic of Korea
| | - Sung Soo Park
- School of Materials Science and Engineering , UNIST , Ulsan 44919 , Republic of Korea
| | - Vinayak P Dravid
- Department of Materials Science and Engineering and NUANCE Center , Northwestern University , Evanston , Illinois 60208 , United States
- International Institute of Nanotechnology, Evanston , Illinois 60208 , United States
| | - Kai He
- Department of Materials Science and Engineering and NUANCE Center , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Materials Science and Engineering , Clemson University , Clemson , South Carolina 29634 , United States
| | - Hu Young Jeong
- School of Materials Science and Engineering , UNIST , Ulsan 44919 , Republic of Korea
- UNIST Central Research Facilities (UCRF) , UNIST , Ulsan 44919 , Republic of Korea
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Kim TY, Anoop G, Son YJ, Kim SH, Lee E, Jo JY. Ferroelectric-mediated filamentary resistive switching in P(VDF-TrFE)/ZnO nanocomposite films. Phys Chem Chem Phys 2018; 20:16176-16183. [PMID: 29862403 DOI: 10.1039/c8cp02024h] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Organic ReRAMs based on ferroelectric P(VDF-TrFE) and ZnO NPs blends exhibiting bipolar resistive switching and a high ON/OFF ratio were realized using a low-cost solution process.
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Affiliation(s)
- Tae Yeon Kim
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 61005
- South Korea
| | - Gopinathan Anoop
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 61005
- South Korea
| | - Yeong Jun Son
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 61005
- South Korea
| | - Soo Hyeon Kim
- Graduate School of Analytical Science and Technology
- Chungnam National University
- Daejeon 34134
- South Korea
| | - Eunji Lee
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 61005
- South Korea
| | - Ji Young Jo
- School of Materials Science and Engineering
- Gwangju Institute of Science and Technology
- Gwangju 61005
- South Korea
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Yang Y, Yuan G, Yan Z, Wang Y, Lu X, Liu JM. Flexible, Semitransparent, and Inorganic Resistive Memory based on BaTi 0.95 Co 0.05 O 3 Film. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1700425. [PMID: 28449391 DOI: 10.1002/adma.201700425] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/21/2017] [Revised: 03/28/2017] [Indexed: 06/07/2023]
Abstract
Perovskite ceramics and single crystals are commonly hard and brittle due to their small maximum elastic strain. Here, large-scale BaTi0.95 Co0.05 O3 (BTCO) film with a SrRuO3 (SRO) buffered layer on a 10 µm thick mica substrate is flexible with a small bending radius of 1.4 mm and semitransparent for visible light at wavelengths of 500-800 nm. Mica/SRO/BTCO/Au cells show bipolar resistive switching and the high/low resistance ratio is up to 50. The resistive-switching properties show no obvious changes after the 2.2 mm radius memory being written/erased for 360 000 cycles nor after the memory being bent to 3 mm radius for 10 000 times. Most importantly, the memory works properly at 25-180 °C or after being annealed at 500 °C. The flexible and transparent oxide resistive memory has good prospects for application in smart wearable devices and flexible display screens.
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Affiliation(s)
- Yuxi Yang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Guoliang Yuan
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Zhibo Yan
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Yaojin Wang
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, P. R. China
| | - Xubing Lu
- Institute for Advanced Materials and Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China
| | - Jun-Ming Liu
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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14
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Yeom SW, You B, Cho K, Jung HY, Park J, Shin C, Ju BK, Kim JW. Silver Nanowire/Colorless-Polyimide Composite Electrode: Application in Flexible and Transparent Resistive Switching Memory. Sci Rep 2017; 7:3438. [PMID: 28611411 PMCID: PMC5469806 DOI: 10.1038/s41598-017-03746-1] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/15/2016] [Accepted: 05/05/2017] [Indexed: 11/26/2022] Open
Abstract
Improving the performance of resistive switching memories, while providing high transparency and excellent mechanical stability, has been of great interest because of the emerging need for electronic wearable devices. However, it remains a great challenge to fabricate fully flexible and transparent resistive switching memories because not enough research on flexible and transparent electrodes, for their application in resistive switching memories, has been conducted. Therefore, it has not been possible to obtain a nonvolatile memory with commercial applications. Recently, an electrode composed of a networked structure of Ag nanowires (AgNWs) embedded in a polymer, such as colorless polyimide (cPI), has been attracting increasing attention because of its high electrical, optical, and mechanical stability. However, for an intended use as a transparent electrode and substrate for resistive switching memories, it still has the crucial disadvantage of having a limited surface coverage of conductive pathways. Here, we introduce a novel approach to obtain a AgNWs/cPI composite electrode with a high figure-of-merit, mechanical stability, surface smoothness, and abundant surface coverage of conductive networks. By employing the fabricated electrodes, a flexible and transparent resistive memory could be successfully fabricated.
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Affiliation(s)
- Seung-Won Yeom
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seoul, 139-713, Republic of Korea
| | - Banseok You
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seoul, 139-713, Republic of Korea
- Display Materials & Components Research Center, Korea Electronics Technology Institute, Seongnam, 463-816, Republic of Korea
| | - Karam Cho
- School of Electrical and Computer Engineering, University of Seoul, 163 Seoulsiripdae-ro, Dongdaemun-gu, Seoul, 130-743, Republic of Korea
| | - Hyun Young Jung
- Department of Energy Engineering, Gyeongnam National University of Science and Technology, Jinju, 52725, Republic of Korea
| | - Junsu Park
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seoul, 139-713, Republic of Korea
| | - Changhwan Shin
- School of Electrical and Computer Engineering, University of Seoul, 163 Seoulsiripdae-ro, Dongdaemun-gu, Seoul, 130-743, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Anam-dong, Seoul, 139-713, Republic of Korea.
| | - Jong-Woong Kim
- Display Materials & Components Research Center, Korea Electronics Technology Institute, Seongnam, 463-816, Republic of Korea.
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