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Kim H, Kim T, Chung HK, Jeon J, Kim SC, Won SO, Harada R, Tsugawa T, Kim S, Kim SK. Sustained Area-Selectivity in Atomic Layer Deposition of Ir Films: Utilization of Dual Effects of O 3 in Deposition and Etching. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402543. [PMID: 39077961 DOI: 10.1002/smll.202402543] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2024] [Revised: 06/14/2024] [Indexed: 07/31/2024]
Abstract
Area-selective deposition (ASD) based on self-aligned technology has emerged as a promising solution for resolving misalignment issues during ultrafine patterning processes. Despite its potential, the problems of area-selectivity losing beyond a certain thickness remain critical in ASD applications. This study reports a novel approach to sustain the area-selectivity of Ir films as the thickness increases. Ir films are deposited on Al2O3 as the growth area and SiO2 as the non-growth area using atomic-layer-deposition with tricarbonyl-(1,2,3-η)-1,2,3-tri(tert-butyl)-cyclopropenyl-iridium and O3. O3 exhibits a dual effect, facilitating both deposition and etching. In the steady-state growth regime, O3 solely contributes to deposition, whereas in the initial growth stages, longer exposure to O3 etches the initially formed isolated Ir nuclei through the formation of volatile IrO3. Importantly, longer O3 exposure is required for the initial etching on the growth area(Al2O3) compared to the non-growth area(SiO2). By controlling the O3 injection time, the area selectivity is sustained even above a thickness of 25 nm by suppressing nucleation on the non-growth area. These findings shed light on the fundamental mechanisms of ASD using O3 and offer a promising avenue for advancing thin-film technologies. Furthermore, this approach holds promise for extending ASD to other metals susceptible to forming volatile species.
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Affiliation(s)
- Han Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Taeseok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Hong Keun Chung
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Department of Materials Science and Chemical Engineering, Hanyang University, Ansan, 15588, South Korea
| | - Jihoon Jeon
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Sung-Chul Kim
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Sung Ok Won
- Advanced Analysis and Data Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Ryosuke Harada
- Chemical Materials Development Department, TANAKA Kikinzoku Kogyo K.K., Tsukuba, 300-4247, Japan
| | - Tomohiro Tsugawa
- Chemical Materials Development Department, TANAKA Kikinzoku Kogyo K.K., Tsukuba, 300-4247, Japan
| | - Sangtae Kim
- Department of Nuclear Engineering, Hanyang University, Seoul, 04763, South Korea
| | - Seong Keun Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, South Korea
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, 02792, South Korea
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Ogunfowora LA, Singh I, Arellano N, Pattison TG, Magbitang T, Nguyen K, Ransom B, Lionti K, Nguyen S, Topura T, Delenia E, Sherwood M, Savoie BM, Wojtecki R. Reactive Vapor-Phase Inhibitors for Area-Selective Depositions at Tunable Critical Dimensions. ACS APPLIED MATERIALS & INTERFACES 2024; 16:5268-5277. [PMID: 38206307 DOI: 10.1021/acsami.3c14821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Area-selective depositions (ASD) take advantage of the chemical contrast between material surfaces in device fabrication, where a film can be selectively grown by chemical vapor deposition on metal versus a dielectric, for instance, and can provide a path to nontraditional device architectures as well as the potential to improve existing device fabrication schemes. While ASD can be accessed through a variety of methods, the incorporation of reactive moieties in inhibitors presents several advantages, such as increasing thermal stability and limiting precursor diffusion into the blocking layer. Alkyne-terminated small molecule inhibitors (SMIs)─propargyl, dipropargyl, and tripropargylamine─were evaluated as metal-selective inhibitors. Modeling these SMIs provided insight into the binding mechanism, influence of sterics, and complex polymer network formed from the reaction between inhibitors consisting of alkene, aromatic, and network branchpoints. While a significant contrast in the binding of the SMIs on copper versus a dielectric was observed, residual amounts were detected on the dielectric surfaces, leading to variable ALD growth rates dependent on pattern-critical dimensions. This behavior can be controlled and utilized to direct film growth on patterns only above a critical threshold dimension; below this threshold, both the dielectric and metal features are protected. This method provides another design parameter for ASD processes and may extend its application to broader-ranging device fabrication schemes.
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Affiliation(s)
- Lawal Adewale Ogunfowora
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Ishwar Singh
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Noel Arellano
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Thomas G Pattison
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Teddie Magbitang
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Khanh Nguyen
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Brandi Ransom
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Krystelle Lionti
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Son Nguyen
- International Business Machines─Semiconductor Technology Research, Albany, New York 12203, United States
| | - Teya Topura
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Eugene Delenia
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Mark Sherwood
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
| | - Brett M Savoie
- Davidson School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Rudy Wojtecki
- International Business Machines─Almaden Research Center, San Jose, California 95120, United States
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Ansari MZ, Hussain I, Mohapatra D, Ansari SA, Rahighi R, Nandi DK, Song W, Kim S. Atomic Layer Deposition-A Versatile Toolbox for Designing/Engineering Electrodes for Advanced Supercapacitors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2303055. [PMID: 37937382 PMCID: PMC10767429 DOI: 10.1002/advs.202303055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2023] [Revised: 09/07/2023] [Indexed: 11/09/2023]
Abstract
Atomic layer deposition (ALD) has become the most widely used thin-film deposition technique in various fields due to its unique advantages, such as self-terminating growth, precise thickness control, and excellent deposition quality. In the energy storage domain, ALD has shown great potential for supercapacitors (SCs) by enabling the construction and surface engineering of novel electrode materials. This review aims to present a comprehensive outlook on the development, achievements, and design of advanced electrodes involving the application of ALD for realizing high-performance SCs to date, as organized in several sections of this paper. Specifically, this review focuses on understanding the influence of ALD parameters on the electrochemical performance and discusses the ALD of nanostructured electrochemically active electrode materials on various templates for SCs. It examines the influence of ALD parameters on electrochemical performance and highlights ALD's role in passivating electrodes and creating 3D nanoarchitectures. The relationship between synthesis procedures and SC properties is analyzed to guide future research in preparing materials for various applications. Finally, it is concluded by suggesting the directions and scope of future research and development to further leverage the unique advantages of ALD for fabricating new materials and harness the unexplored opportunities in the fabrication of advanced-generation SCs.
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Affiliation(s)
- Mohd Zahid Ansari
- School of Materials Science and EngineeringYeungnam University280 Daehak‐RoGyeongsanGyeongbuk38541Republic of Korea
| | - Iftikhar Hussain
- Department of Mechanical EngineeringCity University of Hong Kong83 Tat Chee AvenueKowoonHong Kong
| | - Debananda Mohapatra
- Graduate School of Semiconductor Materials and Devices EngineeringUlsan National Institute of Science & Technology (UNIST)50 UNIST‐gilUlju‐gunUlsan44919Republic of Korea
| | - Sajid Ali Ansari
- Department of PhysicsCollege of ScienceKing Faisal UniversityP.O. Box 400HofufAl‐Ahsa31982Saudi Arabia
| | - Reza Rahighi
- SKKU Advanced Institute of Nano‐Technology (SAINT)Sungkyunkwan University2066 Seobu‐ro, Jangan‐guSuwonGyeonggi‐do16419Republic of Korea
| | - Dip K Nandi
- Plessey Semiconductors LtdTamerton Road RoboroughPlymouthDevonPL6 7BQUK
| | - Wooseok Song
- Thin Film Materials Research CenterKorea Research Institute of Chemical TechnologyDaejeon34114Republic of Korea
| | - Soo‐Hyun Kim
- Graduate School of Semiconductor Materials and Devices EngineeringUlsan National Institute of Science & Technology (UNIST)50 UNIST‐gilUlju‐gunUlsan44919Republic of Korea
- Department of Materials Science and EngineeringUlsan National Institute of Science & Technology (UNIST)50 UNIST‐gilUlju‐gunUlsan44919Republic of Korea
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