Color Revolution: Prospects and Challenges of Quantum-Dot Light-Emitting Diode Display Technologies

Synthesis and photoluminescent spectroscopic analysis of lanthanum (III) coordinated with 1,10-Phenanthroline: A study of its thermally stable behavior

A blue-emitting phosphor designed by lanthanum (III) coordinated with two 1,10-Phenanthroline and three nitrate ligands, [La(Phen)2(NO3)3], was obtained by an effective and simple precipitation method. Fourier transform infrared spectroscopy (FTIR) and powder X-ray diffraction (PXRD) revealed the coordination modes in the compound and the chemical structure, crystallizing in a monoclinic system in the C2/c space group. The luminescence properties, absolute quantum yield (ϕ), and luminescence lifetime decay (τ) were determined by photoluminescence spectroscopy. Under a 350 nm excitation, the sample presents three emission bands corresponding to the π* → π transitions belonging to the organic ligand. The luminescence lifetime (τ) was determined through a monoexponentially fit, obtaining a value of 5616 ns. The [La(Phen)2(NO3)3] complex exhibits an absolute quantum yield of 3 % with the same excitation conditions. In addition, the photometric analysis shows that the luminescent response to a 350 nm excitation is that of a blue-emitting high-purity phosphor with 96 % and chromatic coordinates of 0.15, 0.05. The temperature-dependent luminescence properties revealed considerable thermal stability in the 20-150 °C range with a signal loss of 47 % and an activation energy of thermal quenching (ΔE) of 0.13 eV, the first value reported for a lanthanum complex based on 1,10-Phenanthroline.

Synthesis, characterization, and practical applications of perovskite quantum dots: recent update

This review paper provides an in-depth analysis of Perovskite quantum dots (PQDs), a class of nanomaterials with unique optical and electronic properties that hold immense potential for various technological applications. The paper delves into the structural characteristics, synthesis methods, and characterization techniques of PQDs, highlighting their distinct advantages over other Quantum Dots (QDs). Various applications of PQDs in fields such as solar cells, LEDs, bioimaging, photocatalysis, and sensors are discussed, showcasing their versatility and promising capabilities. The ongoing advancements in PQD research and development point towards a bright future for these nanostructures in revolutionizing diverse industries and technologies.

Nondestructive Direct Patterning of Both Hole Transport and Emissive Layers for Pixelated Quantum-Dot Light-Emitting Diodes

Considering the increasing demand for high-resolution light-emitting diodes (LEDs), it is important that direct fine patterning technologies for LEDs be developed, especially for quantum-dot LEDs (QLEDs). Traditionally, the patterning of QLEDs relies on resin-based photolithography techniques, requiring multiple steps and causing performance deterioration. Nondestructive direct patterning may provide an easy and stepwise method to achieve fine-pixelated units in QLEDs. In this study, two isomeric tridentate cross-linkers (X8/X9) are presented and can be blended into the hole transport layer (HTL) and the emissive layer (EML) of QLEDs. Because of their photosensitivity, the in situ cross-linking process can be efficiently triggered by ultraviolet irradiation, affording high solvent resistance and nondestructive direct patterning of the layers. Red QLEDs using the cross-linked HTL demonstrate an impressive external quantum efficiency of up to 22.45%. Through lithographic patterning enabled by X9, line patterns of HTL and EML films exhibit widths as narrow as 2 and 4 μm, respectively. Leveraging the patterned HTL and EML, we show the successful fabrication of pixelated QLED devices with an area size of 3 × 3 mm2, alongside the successful production of dual-color pixelated QLED devices. These findings showcase the promising potential of direct patterning facilitated by engineered cross-linkers for the cost-effective fabrication of pixelated QLED displays.

Negative corona discharge strategy for efficient quantum dot light-emitting diodes

In colloid quantum dot light-emitting diodes (QLEDs), the control of interface states between ZnO and quantum dots (QDs) plays a vital role. We present a straightforward and efficient method using a negative corona discharge to modify the QD film, creating a dipole moment at the interface of QDs and magnesium-doped ZnO (ZnMgO) for balanced charge carrier distribution within the QDs. This process boosts external quantum efficiencies in red, green, and blue QLEDs to 17.71%, 14.53%, and 9.04% respectively. Notably, optimized devices exhibit significant enhancements, especially at lower brightness levels (1000 to 10,000 cd·m-2), vital for applications in mobile displays, TV screens, and indoor lighting.

Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications

Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.

Record high external quantum efficiency of 20% achieved in fully solution-processed quantum dot light-emitting diodes based on hole-conductive metal oxides

Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) has been widely used as a hole injection material in quantum dot (QD) light-emitting diodes (QLEDs). However, it degrades the organic materials and electrodes in QLEDs due to its strong hydroscopicity and acidity. Although hole-conductive metal oxides have a great potential to solve this disadvantage, it is still a challenge to achieve efficient and stable QLEDs by using these solution-processed metal oxides. Herein, the state-of-the-art QLEDs fabricated by using hole-conductive MoOx QDs are achieved. The α-phase MoOx QDs exhibit a monodispersed size distribution with clear and regular crystal lattices, corresponding to high-quality nanocrystals. Meanwhile, the MoOx film owns an excellent transmittance, suitable valence band, good morphology and impressive hole-conductivity, demonstrating that the MoOx film could be used as a hole injection layer in QLEDs. Moreover, the rigid and flexible red QLEDs made by MoOx exhibit peak external quantum efficiencies of over 20%, representing a new record for the hole-conductive metal oxide based QLEDs. Most importantly, the MoOx QDs afford their QLEDs with a longer T95 lifetime than these devices made by PEDOT:PSS. As a result, we believe that the MoOx QDs could be used as efficient and stable hole injection materials used in QLEDs.

Memory-Enabled Quantum-Dot Light-Emitting Diodes

Quantum-dot light-emitting diodes (QLEDs) with memory capability can provide multifunctional integration properties in on-chip and intelligent electronic applications. Herein, memory properties are achieved by inserting a tungsten oxide (WOx) film between the ZnO electron-transporting layer and cathode. Pentavalent tungsten ions (W5+) in this nonstoichiometric WOx film can be oxidized to W6+ by storing holes, inducing significant electrons in the adjacent ZnO layer. Hole storage in the WOx layer suppresses electron injection into the quantum dot emissive layer, hence reducing electroluminescence intensity on the onset stage of the QLEDs. This operation-history correlation for the electroluminescence intensity means a memory behavior for the QLEDs. Furthermore, the power efficiency of the devices is greatly improved after inserting the WOx layer due to electrical field-dependent self-adaptive electron injection into the quantum dots (QDs). We anticipate this type of QLEDs have potential applications in on-chip integration applications, such as the optical computing field and storage.

Hole-Injection-Barrier Effect on the Degradation of Blue Quantum-Dot Light-Emitting Diodes

Inefficient hole injection presents a major challenge in achieving stable and commercially viable solution-processed blue electroluminescent devices. Here, we conduct an in-depth study on quantum-dot light-emitting diodes (QLEDs) to understand how the energy levels of common electrodes and hole-transporting layers (HTL) affect device degradation. Our experimental findings reveal a design rule that may seem nonintuitive: combining an electrode and HTL with matched energy levels is most effective in preventing voltage rise and irreversible luminance decay, even though it causes a significant energy offset between the HTL and emissive quantum dots. Using an iterative electrostatic model, we discover that the positive outcomes, including a T95 lifetime of 109 h (luminance = 1000 nits, CIE-y = 0.087), are due to the enhanced p-type doping in the HTL rather than the assumed reduction in barrier heights. Furthermore, our modified hole injection dynamics theory, which considers distributed density-of-states, shows that the increased HTL/quantum-dot energy offset is not a primary concern because the effective barrier height is significantly lower than conventionally assumed. Following this design rule, we expect device stability to be enhanced considerably.

The warming-up effects of quantum-dot light emitting diodes: A reversible stability issue related to shell traps

The aging phenomenon is commonly observed in quantum-dot light emitting diodes (QLEDs), involving complex chemical or physical processes. Resolving the underlying mechanism of these aging issues is crucial to deliver reliable electroluminescent devices in future display applications. Here, we report a reversible positive aging phenomenon that the device brightness and efficiency significantly improve after device operation, but recover to initial states after long-time storage or mild heat treatment, which can be termed as warming-up effects. Steady and transient equivalent circuit analysis suggest that the radiative recombination current dramatically increases but electron leakage from the quantum dots (QDs) to hole transport layer becomes more accessible during the warming-up process. Further analysis discloses that the notable enhancement of device efficiency can be ascribed to the filling of shell traps in gradient alloyed QDs. This work reveals a distinct positive aging phenomenon featured with reversibility, and further guidelines would be provided to achieve stable QLED devices in real display applications.