Theory of adsorption: Ordered monolayers from Na to Cl on Si(001) and Ge(001)

Identification of Tetramers in Silver Films Grown on the Si(001) Surface at Room Temperature

We describe the atomic structure of the silver film grown on Si(001) at room temperature, as studied by low-temperature scanning tunneling microscopy and density functional theory. Experiment and theory agree on a film structure in which Ag tetramers are identified for the first time. Ag tetramers are found to be adsorbed exclusively at the trough between two Si rows, interacting with four adjacent Si dimers via covalent bonding. Consequently, the π bonds of the Si dimers underneath the silver film are eliminated.

A first principles study of H2S adsorption and decomposition on a Ge(100) surface

We employed density functional theory (DFT) calculations to examine the adsorption configurations and possible reaction paths for H₂S on a Ge(100) surface.

First principles studies of an Si tip on an Si(100)2 × 1 reconstructed surface

We present a systematic study of the interaction between a silicon tip and a reconstructed Si(100)2 × 1 surface by means of total energy calculations using density functional theory. We perform geometry optimization to obtain the reconstructed Si surface using the local density approximation and the generalized gradient approximation methods and compare our results with those obtained experimentally. We then study the effects of the tip of a scanning probe of an atomic force microscope (AFM) on the behaviour of atoms on the reconstructed surface when the tip translates at distances close to it. Our results show that at certain positions of the tip relative to the surface and depending on the direction of the scan, the Si dimer on the surface flips, resulting in a local reconstruction of the surface into p(2 × 2) or c(4 × 2) configurations. These configurations exhibit energies lower by 0.05 eV/dimer than the Si(100)2 × 1 structure.

Surface SN2 Reaction by H2O on Chlorinated Si(100)-2 × 1 Surface

The potential energy surfaces of one, two, and three water molecule sequential adsorptions on the symmetrically chlorinated Si(100)-2 x 1 surface were theoretically explored with SIMOMM:MP2/6-31G(d). The first water molecule adsorption to the surface dimer requires a higher reaction barrier than the subsequent second water molecule adsorption. The lone pair electrons of the incoming water molecule nucleophilically attack the surface Si atom to which the leaving Cl group is bonded, yielding an S(N)2 type transition state. At the same time, the Cl abstracts the H atom of the incoming water molecule, forming a unique four-membered ring conformation. The second water molecule adsorption to the same surface dimer requires a much lower reaction barrier, which is attributed to the surface cooperative effect by the surface hydroxyl group that can form a hydrogen bond with the incoming second water molecule. The third water molecule adsorption exhibits a higher reaction barrier than the first and the second water molecule adsorption channels but yields a thermodynamically more stable product. In general, it is expected that the surface Si-Cl bonds can be subjected to the substitution reactions by water molecules, yielding surface Si-OH bonds, which can be a good initial template for subsequent surface chemical modifications. However, oversaturations can be a competing side reaction under severe conditions, suggesting that the precise control of surface kinetic environments is necessary to tailor the final surface characteristics.

First-principles study of the adsorption of cesium on Si(001)(2×1) surface

First-principles calculations based on density functional theory-generalized gradient approximation method have been performed on cesium adsorption on Si(001)(2 x 1) surface. The optimized geometries and adsorption energies have been obtained and the preferred binding sites have been determined for the coverage (Theta) of one monolayer and half a monolayer. At Theta = 0.5 ML the most stable adsorption site is shown to be T3 site. At Theta = 1 ML two Cs atoms are adsorbed at HH and T3 sites, respectively. It was found that the saturation coverage of Cs for the Si(001)(2 x 1)-Cs surface is one monolayer instead of half a monolayer. This finding supports the majority of experimental observations but does not support recent coaxial impact collision ion scattering spectroscopy investigations [Surf. Sci. 531, L340 (2003)] and He(+) Rutherford backscattering spectroscopy studies [Phys. Rev. B 62, 4545 (2000)]. Mulliken charge and overlap population analysis showed that the Cs-Si bond is indeed ionic rather than polarized covalent as generally assumed for alkali metal (AM) on Si(001)(2 x 1) surface. Geometrical structure analysis seems to have limitations in determining the nature of AM-substrate bond. We also found that the silicon surface is metallic and semiconducting for the coverages of 0.5 and 1 ML, respectively.