1
|
Ren R, Cao Y, Wang C, Guan Y, Liu S, Wang L, Du Z, Feng C, Bekele ZA, Lan X, Zhang N, Yang G, Wang L, Li B, Hu Y, Liu Y, Parkin S, Wang K, Yu G. Initialization-Free and Magnetic Field-Free Spin-Orbit p-Bits with Backhopping-like Magnetization Switching for Probabilistic Applications. NANO LETTERS 2024; 24:10072-10080. [PMID: 39132906 DOI: 10.1021/acs.nanolett.4c01989] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/13/2024]
Abstract
Probabilistic bits (p-bits) with thermal- and spin torque-induced nondeterministic magnetization switching are promising candidates for performing probabilistic computing. Previously reported spin torque p-bits include volatile low-energy barrier nanomagnets (LBNMs) with spontaneously fluctuating magnetizations and initialization-necessary nonvolatile magnets. However, initialization-free nonvolatile spin torque p-bits are still lacking. Here, we demonstrate moderately thermal stable spin-orbit torque (SOT) p-bits with non-consecutively deposited Pt//Pt/Co/Pt stacks. Backhopping-like (BH) magnetization switching with a wide range current-tunable probability of final up and down magnetization states from 0% to 100% was achieved, regardless of the initial magnetization state, which was attributed to the interplay of SOT and thermal contributions. Integer factorization using such BH-SOT p-bits in zero magnetic field was demonstrated at times that are significantly shorter than those of existing nonvolatile STT or volatile LBNMs p-bits. Our realization of initialization-free and magnetic field-free moderately thermally stable BH-SOT p-bits opens up a new perspective for probabilistic spintronic applications.
Collapse
Affiliation(s)
- Ruizhi Ren
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
- College of Sciences, Northeastern University, Shenyang 110819, China
| | - Yi Cao
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Chao Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Yicheng Guan
- Max Planck Institute for Microstructure Physics, 06120 Halle, Germany
| | - Shuai Liu
- Department of Physics, Beijing Technology and Business University, Beijing 100048, China
| | - Lijin Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zeting Du
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Chun Feng
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Zelalem Abebe Bekele
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Xiukai Lan
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Nan Zhang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guang Yang
- Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, China
| | - Le Wang
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Natural Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, China
| | - Baohe Li
- Department of Physics, Beijing Technology and Business University, Beijing 100048, China
| | - Yong Hu
- College of Sciences, Northeastern University, Shenyang 110819, China
| | - Yan Liu
- College of Sciences, Northeastern University, Shenyang 110819, China
| | - Stuart Parkin
- Max Planck Institute for Microstructure Physics, 06120 Halle, Germany
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
| | - Guanghua Yu
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| |
Collapse
|
2
|
Liu L, Wang D, Wang D, Sun Y, Lin H, Gong X, Zhang Y, Tang R, Mai Z, Hou Z, Yang Y, Li P, Wang L, Luo Q, Li L, Xing G, Liu M. Domain wall magnetic tunnel junction-based artificial synapses and neurons for all-spin neuromorphic hardware. Nat Commun 2024; 15:4534. [PMID: 38806482 PMCID: PMC11133408 DOI: 10.1038/s41467-024-48631-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2023] [Accepted: 05/06/2024] [Indexed: 05/30/2024] Open
Abstract
We report a breakthrough in the hardware implementation of energy-efficient all-spin synapse and neuron devices for highly scalable integrated neuromorphic circuits. Our work demonstrates the successful execution of all-spin synapse and activation function generator using domain wall-magnetic tunnel junctions. By harnessing the synergistic effects of spin-orbit torque and interfacial Dzyaloshinskii-Moriya interaction in selectively etched spin-orbit coupling layers, we achieve a programmable multi-state synaptic device with high reliability. Our first-principles calculations confirm that the reduced atomic distance between 5d and 3d atoms enhances Dzyaloshinskii-Moriya interaction, leading to stable domain wall pinning. Our experimental results, supported by visualizing energy landscapes and theoretical simulations, validate the proposed mechanism. Furthermore, we demonstrate a spin-neuron with a sigmoidal activation function, enabling high operation frequency up to 20 MHz and low energy consumption of 508 fJ/operation. A neuron circuit design with a compact sigmoidal cell area and low power consumption is also presented, along with corroborated experimental implementation. Our findings highlight the great potential of domain wall-magnetic tunnel junctions in the development of all-spin neuromorphic computing hardware, offering exciting possibilities for energy-efficient and scalable neural network architectures.
Collapse
Affiliation(s)
- Long Liu
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Di Wang
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dandan Wang
- Hubei Jiufengshan Laboratory, Wuhan, Hubei, 430206, China.
| | - Yan Sun
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Huai Lin
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xiliang Gong
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Yifan Zhang
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruifeng Tang
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhihong Mai
- Hubei Jiufengshan Laboratory, Wuhan, Hubei, 430206, China
| | - Zhipeng Hou
- Institute for Advanced Materials, South China Normal University, Guangzhou, 510006, China
| | - Yumeng Yang
- School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Peng Li
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, China
| | - Lan Wang
- Lab of Low Dimensional Magnetism and Spintronic Devices, School of Physics, Hefei University of Technology, Hefei, 230009, Anhui, China
| | - Qing Luo
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ling Li
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Guozhong Xing
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Ming Liu
- Key Lab of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
- Frontier Institute of Chip and System, State Key Laboratory of Integrated Chips and Systems, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, 200433, China.
| |
Collapse
|
3
|
Bloom BP, Paltiel Y, Naaman R, Waldeck DH. Chiral Induced Spin Selectivity. Chem Rev 2024; 124:1950-1991. [PMID: 38364021 PMCID: PMC10906005 DOI: 10.1021/acs.chemrev.3c00661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2023] [Revised: 01/16/2024] [Accepted: 01/23/2024] [Indexed: 02/18/2024]
Abstract
Since the initial landmark study on the chiral induced spin selectivity (CISS) effect in 1999, considerable experimental and theoretical efforts have been made to understand the physical underpinnings and mechanistic features of this interesting phenomenon. As first formulated, the CISS effect refers to the innate ability of chiral materials to act as spin filters for electron transport; however, more recent experiments demonstrate that displacement currents arising from charge polarization of chiral molecules lead to spin polarization without the need for net charge flow. With its identification of a fundamental connection between chiral symmetry and electron spin in molecules and materials, CISS promises profound and ubiquitous implications for existing technologies and new approaches to answering age old questions, such as the homochiral nature of life. This review begins with a discussion of the different methods for measuring CISS and then provides a comprehensive overview of molecules and materials known to exhibit CISS-based phenomena before proceeding to identify structure-property relations and to delineate the leading theoretical models for the CISS effect. Next, it identifies some implications of CISS in physics, chemistry, and biology. The discussion ends with a critical assessment of the CISS field and some comments on its future outlook.
Collapse
Affiliation(s)
- Brian P. Bloom
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| | - Yossi Paltiel
- Applied
Physics Department and Center for Nano-Science and Nano-Technology, The Hebrew University of Jerusalem, Jerusalem 9190401, Israel
| | - Ron Naaman
- Department
of Chemical and Biological Physics, Weizmann
Institute, Rehovot 76100, Israel
| | - David H. Waldeck
- Department
of Chemistry, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
| |
Collapse
|
4
|
Zhu L. Switching of Perpendicular Magnetization by Spin-Orbit Torque. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300853. [PMID: 37004142 DOI: 10.1002/adma.202300853] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 03/16/2023] [Indexed: 06/19/2023]
Abstract
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical switching of such perpendicular magnetization in an energy-efficient, deterministic, scalable manner has remained a big challenge. This problem has recently attracted enormous efforts in the field of spintronics. Here, recent advances and challenges in the understanding of the electrical generation of spin currents, the switching mechanisms and the switching strategies of perpendicular magnetization, the switching current density by spin-orbit torque of transverse spins, the choice of perpendicular magnetic materials are reviewed, and the progress in prototype perpendicular SOT memory and logic devices toward the goal of energy-efficient, dense, fast perpendicular spin-orbit torque applications is summarized.
Collapse
Affiliation(s)
- Lijun Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
5
|
Wang D, Tang R, Lin H, Liu L, Xu N, Sun Y, Zhao X, Wang Z, Wang D, Mai Z, Zhou Y, Gao N, Song C, Zhu L, Wu T, Liu M, Xing G. Spintronic leaky-integrate-fire spiking neurons with self-reset and winner-takes-all for neuromorphic computing. Nat Commun 2023; 14:1068. [PMID: 36828856 PMCID: PMC9957988 DOI: 10.1038/s41467-023-36728-1] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Accepted: 02/14/2023] [Indexed: 02/26/2023] Open
Abstract
Neuromorphic computing using nonvolatile memories is expected to tackle the memory wall and energy efficiency bottleneck in the von Neumann system and to mitigate the stagnation of Moore's law. However, an ideal artificial neuron possessing bio-inspired behaviors as exemplified by the requisite leaky-integrate-fire and self-reset (LIFT) functionalities within a single device is still lacking. Here, we report a new type of spiking neuron with LIFT characteristics by manipulating the magnetic domain wall motion in a synthetic antiferromagnetic (SAF) heterostructure. We validate the mechanism of Joule heating modulated competition between the Ruderman-Kittel-Kasuya-Yosida interaction and the built-in field in the SAF device, enabling it with a firing rate up to 17 MHz and energy consumption of 486 fJ/spike. A spiking neuron circuit is implemented with a latency of 170 ps and power consumption of 90.99 μW. Moreover, the winner-takes-all is executed with a current ratio >104 between activated and inhibited neurons. We further establish a two-layer spiking neural network based on the developed spintronic LIFT neurons. The architecture achieves 88.5% accuracy on the handwritten digit database benchmark. Our studies corroborate the circuit compatibility of the spintronic neurons and their great potential in the field of intelligent devices and neuromorphic computing.
Collapse
Affiliation(s)
- Di Wang
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Ruifeng Tang
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Huai Lin
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Long Liu
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Nuo Xu
- Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720, USA
| | - Yan Sun
- Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, China
| | - Xuefeng Zhao
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China
| | - Ziwei Wang
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Dandan Wang
- Jiufengshan Laboratory, Wuhan, 430206, Hubei, China
| | - Zhihong Mai
- Jiufengshan Laboratory, Wuhan, 430206, Hubei, China
| | - Yongjian Zhou
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Nan Gao
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China
| | - Cheng Song
- Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Lijun Zhu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083, Beijing, China
| | - Tom Wu
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
| | - Ming Liu
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
- University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Guozhong Xing
- Key Laboratory of Microelectronics Devices & Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China.
- University of Chinese Academy of Sciences, 100049, Beijing, China.
- School of Microelectronics, University of Science and Technology of China, Hefei, 230026, Anhui, China.
| |
Collapse
|
6
|
Wang D, Wang Z, Xu N, Liu L, Lin H, Zhao X, Jiang S, Lin W, Gao N, Liu M, Xing G. Synergy of Spin-Orbit Torque and Built-In Field in Magnetic Tunnel Junctions with Tilted Magnetic Anisotropy: Toward Tunable and Reliable Spintronic Neurons. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203006. [PMID: 35927016 PMCID: PMC9596820 DOI: 10.1002/advs.202203006] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/21/2022] [Revised: 07/09/2022] [Indexed: 06/15/2023]
Abstract
Owing to programmable nonlinear dynamics, magnetic domain wall (DW)-based devices can be configured to function as spintronic neurons, promising to execute sophisticated tasks as a human brain. Developing energy-efficient, CMOS compatible, reliable, and tunable spintronic neurons to emulate brain-inspired processes has been a key research goal for decades. Here, a new type of DW device is reported with biological neuron characteristics driven by the synergistic interaction between spin-orbit torque and built-in field (Hbuilt-in ) in magnetic tunnel junctions, enabling time- and energy-efficient leaky-integrate-and-fire and self-reset neuromorphic implementations. A tilted magnetic anisotropic free layer is proposed and further executed to mitigate the DW retrograde motion by suppressing the Walker breakdown. Complementary experiments and micromagnetic co-simulation results show that the integrating/leaking time of the developed spintronic neuron can be tuned to 12/15 ns with an integrating power consumption of 65 µW, which is 36× and 1.84× time and energy efficient than the state-of-the-art alternatives, respectively. Moreover, the spatial distribution of Hbuilt-in can be modulated by adjusting the width and compensation of the reference layer, facilitating tunable activation function generator exploration. Such architecture demonstrates great potential in both fundamental research and new trajectories of technology advancement for spintronic neuron hardware applications.
Collapse
Affiliation(s)
- Di Wang
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Ziwei Wang
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Nuo Xu
- Department of Electrical Engineering and Computer SciencesUniversity of CaliforniaBerkeleyCA94720USA
| | - Long Liu
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Huai Lin
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Xuefeng Zhao
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of MicroelectronicsUniversity of Science and Technology of ChinaHefei230026China
| | - Sheng Jiang
- School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072China
| | - Weinan Lin
- Department of PhysicsXiamen UniversityXiamen361005China
| | - Nan Gao
- School of MicroelectronicsUniversity of Science and Technology of ChinaHefei230026China
| | - Ming Liu
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices and Integrated TechnologyInstitute of MicroelectronicsChinese Academy of SciencesBeijing100029China
- School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijing100049China
| |
Collapse
|
7
|
Lin H, Luo X, Liu L, Wang D, Zhao X, Wang Z, Xue X, Zhang F, Xing G. All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing. MICROMACHINES 2022; 13:319. [PMID: 35208443 PMCID: PMC8876745 DOI: 10.3390/mi13020319] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/23/2022] [Revised: 02/11/2022] [Accepted: 02/14/2022] [Indexed: 02/01/2023]
Abstract
Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.
Collapse
Affiliation(s)
- Huai Lin
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xi Luo
- Department of Functional Material Research, Central Iron and Steel Research Institute, Beijing 100081, China;
| | - Long Liu
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Di Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xuefeng Zhao
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
| | - Ziwei Wang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoyong Xue
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 201203, China;
| | - Feng Zhang
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
| | - Guozhong Xing
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (H.L.); (L.L.); (D.W.); (X.Z.); (Z.W.); (F.Z.)
- University of the Chinese Academy of Sciences, Beijing 100049, China
| |
Collapse
|
8
|
Ju H, Zhao X, Liu W, Song Y, Liu L, Ma J, Li Y, Wu J, Zhang Z. Enhanced Spin-Orbit Torque and Low Critical Current Density in Pt 100-xRu x/[CoNi]/Ru Multilayer for Spintronic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:61742-61750. [PMID: 34905352 DOI: 10.1021/acsami.1c17653] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Using a heavy-metal (HM) alloy layer in spin-orbit torque (SOT)-based devices is an effective method for obtaining a high current-spin conversion efficiency θSH. In this work, SOT-based spintronic devices with a Pt100-xRux-alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θSH and to observe the process of current-induced magnetization switching. Both the highest θSH of 0.132 and the lowest critical current density (Jc) of 8 × 105 A/cm2 are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii-Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt-Ru alloyed HM layer is an effective route for SOT application with enhanced performance.
Collapse
Affiliation(s)
- Hongzhan Ju
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Xiaotian Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Wei Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Yuhang Song
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Long Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jun Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Yang Li
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Jinxiang Wu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China
| | - Zhidong Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| |
Collapse
|
9
|
Sedov E, Arakelian S, Kavokin A. Spontaneous symmetry breaking in persistent currents of spinor polaritons. Sci Rep 2021; 11:22382. [PMID: 34789817 PMCID: PMC8599468 DOI: 10.1038/s41598-021-01812-3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/23/2021] [Accepted: 11/01/2021] [Indexed: 11/26/2022] Open
Abstract
We predict the spontaneous symmetry breaking in a spinor Bose–Einstein condensate of exciton-polaritons (polaritons) caused by the coupling of its spin and orbital degrees of freedom. We study a polariton condensate trapped in a ring-shaped effective potential with a broken rotational symmetry. We propose a realistic scheme of generating controllable spinor azimuthal persistent currents of polaritons in the trap under the continuous wave optical pump. We propose a new type of half-quantum circulating states in a spinor system characterized by azimuthal currents in both circular polarizations and a vortex in only one of the polarizations. The spontaneous symmetry breaking in the spinor polariton condensate that consists in the switching from co-winding to opposite-winding currents in opposite spin states is revealed. It is characterized by the change of the average orbital angular momentum of the condensate from zero to non-zero values. The radial displacement of the pump spot and the polarization of the pump act as the control parameters. The considered system exhibits a fundamental similarity to a superconducting flux qubit, which makes it highly promising for applications in quantum computing.
Collapse
Affiliation(s)
- Evgeny Sedov
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China. .,Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China. .,Department of Physics and Applied Mathematics, Vladimir State University Named After A. G. and N. G. Stoletovs, Gorky str. 87, Vladimir, Russia, 600000. .,Spin Optics Laboratory, St. Petersburg State University, Ul'anovskaya 1, Peterhof, St. Petersburg, Russia, 198504.
| | - Sergey Arakelian
- Department of Physics and Applied Mathematics, Vladimir State University Named After A. G. and N. G. Stoletovs, Gorky str. 87, Vladimir, Russia, 600000
| | - Alexey Kavokin
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.,Institute of Natural Sciences, Westlake Institute for Advanced Study, 18 Shilongshan Road, Hangzhou, 310024, Zhejiang Province, China.,Spin Optics Laboratory, St. Petersburg State University, Ul'anovskaya 1, Peterhof, St. Petersburg, Russia, 198504.,Russian Quantum Center, Skolkovo, Moscow, Russia, 143025
| |
Collapse
|
10
|
Tian M, Zhu Y, Jalali M, Jiang W, Liang J, Huang Z, Chen Q, Zeng Z, Zhai Y. Two-Dimensional Van Der Waals Materials for Spin-Orbit Torque Applications. FRONTIERS IN NANOTECHNOLOGY 2021. [DOI: 10.3389/fnano.2021.732916] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Spin-orbit torque (SOT) provides an efficient approach to control the magnetic state and dynamics in different classes of materials. Recent years, the crossover between two-dimensional van der Waals (2D vdW) materials and SOT opens a new prospect to push SOT devices to the 2D limit. In this mini-review, we summarize the latest progress in 2D vdW materials for SOT applications, highlighting the comparison of the performance between devices with various structures. It is prospected that the large family of 2D vdW materials and numerous combinations of heterostructures will widely extend the material choices and bring new opportunities to SOT devices in the future.
Collapse
|
11
|
Yang Y, Luo Z, Wang S, Huang W, Wang G, Wang C, Yao Y, Li H, Wang Z, Zhou J, Dong Y, Guan Y, Tian Y, Feng C, Zhao Y, Gao C, Xiao G. Electric-field-assisted non-volatile magnetic switching in a magnetoelectronic hybrid structure. iScience 2021; 24:102734. [PMID: 34258562 PMCID: PMC8258860 DOI: 10.1016/j.isci.2021.102734] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2021] [Revised: 05/01/2021] [Accepted: 06/08/2021] [Indexed: 12/03/2022] Open
Abstract
Electric-field (E-field) control of magnetic switching provides an energy-efficient means to toggle the magnetic states in spintronic devices. The angular tunneling magnetoresistance (TMR) of an magnetic tunnel junction (MTJ)/PMN-PT magnetoelectronic hybrid indicates that the angle-dependent switching fields of the free layer can decrease significantly subject to the application of an E-field. In particular, the switching field along the major axis is reduced by 59% from 28.0 to 11.5 Oe as the E-field increases from 0 to 6 kV/cm, while the TMR ratio remains intact. The switching boundary angle decreases (increases) for the parallel (antiparallel) to antiparallel (parallel) state switch, resulting in a shrunk switching window size. The non-volatile and reversible 180° magnetization switching is demonstrated by using E-fields with a smaller magnetic field bias as low as 11.5 Oe. The angular magnetic switching originates from competition among the E-field-induced magnetoelastic anisotropy, magnetic shape anisotropy, and Zeeman energy, which is confirmed by micromagnetic simulations.
Collapse
Affiliation(s)
- Yuanjun Yang
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Zhenlin Luo
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shutong Wang
- Department of Physics, Brown University, Providence, RI 02912, USA
| | - Wenyu Huang
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Guilin Wang
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Cangmin Wang
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Yingxue Yao
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Hongju Li
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Zhili Wang
- Department of Physics and Lab of Correlated Electron System and Spintronic Devices, School of Physics and School of Microelectronics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China
| | - Jingtian Zhou
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yongqi Dong
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yong Guan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Yangchao Tian
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Ce Feng
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yonggang Zhao
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Chen Gao
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Gang Xiao
- Department of Physics, Brown University, Providence, RI 02912, USA
| |
Collapse
|