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Cobarrubia A, Schottle N, Suliman D, Gomez-Barron S, Patino CR, Kiefer B, Behura SK. Hexagonal Boron Nitride Quantum Simulator: Prelude to Spin and Photonic Qubits. ACS NANO 2024; 18:22609-22619. [PMID: 39138124 DOI: 10.1021/acsnano.4c04240] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
The quest for qubit operation at room temperature is accelerating the field of quantum information science and technology. Solid state quantum defects with spin-optical properties are promising spin- and photonic qubit candidates for room temperature operations. In this regard, a single boron vacancy within hexagonal boron nitride (h-BN) lattice such as VB- defect has coherent quantum interfaces for spin and photonic qubits owing to the large band gap of h-BN (6 eV) that can shield a computational subspace from environmental noise. However, for a VB- defect in h-BN to be a potential quantum simulator, the design and characterization of the Hamiltonian involving mutual interactions of the defect and other degrees of freedom are needed to fully understand the effect of defects on the computational subspace. Here, we studied the key coupling tensors such as zero-field splitting, Zeeman effect, and hyperfine splitting in order to build the Hamiltonian of the VB- defect. These eigenstates are spin triplet states that form a computational subspace. To study the phonon-assisted single photon emission in the VB- defect, the Hamiltonian is characterized by electron-phonon interaction with Jahn-Teller distortions. A theoretical demonstration of how the VB- Hamiltonian is utilized to relate these quantum properties to spin- and photonic-quantum information processing. For selecting promising host 2D materials for spin and photonic qubits, we present a data-mining perspective based on the proposed Hamiltonian engineering of the VB- defect in which h-BN is one of four materials chosen to be room temperature qubit candidates.
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Affiliation(s)
- Antonio Cobarrubia
- Department of Physics, San Diego State University, San Diego, California 92182, United States
- Computational Science Research Center, San Diego State University, San Diego, California 92182, United States
| | - Nicholas Schottle
- Department of Physics, San Diego State University, San Diego, California 92182, United States
| | - Dilon Suliman
- Department of Physics, San Diego State University, San Diego, California 92182, United States
| | - Sebastian Gomez-Barron
- Department of Physics, San Diego State University, San Diego, California 92182, United States
| | - Christopher R Patino
- Department of Physics, San Diego State University, San Diego, California 92182, United States
| | - Boris Kiefer
- Department of Physics, New Mexico State University, Las Cruces, New Mexico 88003, United States
| | - Sanjay K Behura
- Department of Physics, San Diego State University, San Diego, California 92182, United States
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2
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Park OK, Kim NH, Lee JH. A facile and scalable fabrication method of scrolled graphene/boron nitride-based van der Waals superlattice heterostructure materials for highly stable supercapacitor electrode application. NANOSCALE 2024; 16:14448-14458. [PMID: 39012377 DOI: 10.1039/d4nr01289e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/17/2024]
Abstract
Due to the increasing demand for the development of efficient renewable energy supply systems to reduce the mismatch between energy demand and utilization, supercapacitors have attracted increasing attention in the energy industry. However, the development of energy storage electrode materials to be applied at the industrial level is still challenging due to the unsatisfactory durability and scalable production issues. This study suggested a facile and scalable one-pot fabrication method of using graphene/hexagonal boron nitride (G/BN)-based one-dimensional (1D) van der Waals superlattice heterostructures (vdWSLs) as highly stable electrode materials to enhance the energy storage performance by improving the mesopore volume content, specific surface area, electrical properties, and interfacial interaction between the stacked G/BN layers. The G/BN-based vdWSLs were fabricated by a simple scrolling process through the electromagnetic interaction between the attached magnetic iron oxide nanoparticles (Fe3O4 NPs) on the surface of a G/BN vdW heterostructure (vdWH) and the applied magnetic field. The investigation results demonstrate that the changed morphology of the fabricated G/Fe/BN(NS) strongly affects the fine pore distribution, electrochemical performance, and electrical properties. Consequently, as a synergistic effect of an increased mesopore volume content, specific surface area, and C-B-N heterojunction interfacial area, the fabricated G/Fe/BN(NS) electrode showed a 100% enhancement of specific capacitance (207 F g-1 at 0.5 A g-1) and almost 7 times enhancement of electrical conductivity (800 S cm-1) with a nearly 2.3 times increase of carrier mobility (716 cm2 V-1 s-1) compared to that of the G/Fe/BN electrode. Furthermore, it exhibited outstanding long-term cycling stability with almost 119% capacitance retention even after 100 000 charge-discharge cycles. These results suggest that G/Fe/BN(NS) has tremendous potential as an electrode to fabricate high-performance supercapacitors with excellent cycling stability.
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Affiliation(s)
- Ok-Kyung Park
- Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea.
| | - Nam Hoon Kim
- Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea.
| | - Joong Hee Lee
- Department of Nano Convergence Engineering, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea.
- Carbon Composite Research Center, Department of Polymer-Nano Science and Technology, Jeonbuk National University, Jeonju, Jeonbuk, 54896, Republic of Korea
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3
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Liu D, Wang Y, Gong Q, Xia Y, Li L, Xue Y, Yang J, Li S. Modification Strategies of Hexagonal Boron Nitride Nanomaterials for Photocatalysis. CHEM REC 2024; 24:e202300334. [PMID: 38984722 DOI: 10.1002/tcr.202300334] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2023] [Revised: 04/09/2024] [Indexed: 07/11/2024]
Abstract
Although hexagonal boron nitride (h-BN) was initially considered a less promising photocatalyst due to its large band gap and apparent chemical inertness, its unique two-dimensional lamellar structure coupled with high stability and environmental friendliness, as the second largest van der Waals material after graphene, provides a unique platform for photocatalytic innovation. This review not only highlights the intrinsic qualities of h-BN with photocatalytic potentials, such as high stability, environmental compatibility, and tunable bandgap through various modification strategies but also provides a comprehensive overview of the recent advances in h-BN-based nanomaterials for environmental and energy applications, as well as an in-depth description of the modification methods and fundamental properties for these applications. In addition, we discuss the challenges and prospects of h-BN-based nanomaterials for future photocatalysis.
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Affiliation(s)
- Dongao Liu
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Yuqing Wang
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Quanxin Gong
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Yupeng Xia
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Lei Li
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Yuhua Xue
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
| | - Junhe Yang
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
- Shanghai Jianqiao University, Shanghai, 201306, China
| | - Shengjuan Li
- School of Materials and Chemistry, University of Shanghai for Science and Technology, Shanghai, 200093, China
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Ding D, Huang R, Peng B, Xie Y, Nie H, Yang C, Zhang Q, Zhang XA, Qin G, Chen Y. Effect of Nanoscale in Situ Interface Welding on the Macroscale Thermal Conductivity of Insulating Epoxy Composites: A Multiscale Simulation Investigation. ACS NANO 2023; 17:19323-19337. [PMID: 37769163 DOI: 10.1021/acsnano.3c06524] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/30/2023]
Abstract
Insulating thermally conductive polymer composites are in great demand in integrated-circuit packages, for efficient heat dissipation and to alleviative short-circuit risk. Herein, the continuous oriented hexagonal boron nitride (h-BN) frameworks (o-BN@SiC) were prepared via self-assembly and in situ chemical vapor infiltration (CVI) interface welding. The insulating o-BN@SiC/epoxy (o-BN@SiC/EP) composites exhibited enhanced thermal conductivity benefited from the CVI-SiC-welded BN-BN interface. Further, multiscale simulation, combining first-principles calculation, Monte Carlo simulation, and finite-element simulation, was performed to quantitatively reveal the effect of the welded BN-BN interface on the heat transfer of o-BN@SiC/EP composites. Phonon transmission in solders and phonon-phonon coupling of filler-solder interfaces enhanced the interfacial heat transfer between adjacent h-BN microplatelets, and the interfacial thermal resistance of the dominant BN-BN interface was decreased to only 3.83 nK·m2/W from 400 nK·m2/W, plunging by over 99%. This highly weakened interfacial thermal resistance greatly improved the heat transfer along thermal pathways and resulted in a 26% thermal conductivity enhancement of o-BN@SiC/EP composites, compared with physically contacted oriented h-BN/EP composites, at 15 vol % h-BN. This systematic multiscale simulation broke through the barrier of revealing the heat transfer mechanism of polymer composites from the nanoscale to the macroscale, which provided rational cognition about the effect of the interfacial thermal resistance between fillers on the thermal conductivity of polymer composites.
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Affiliation(s)
- Dongliang Ding
- Shaanxi Key Laboratory of Macromolecular Science and Technology, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, China
- Ningbo Institute of Northwestern Polytechnical University, Ningbo 315103, China
| | - Ruoyu Huang
- College of Physical Science and Technology, Xiamen University, Xiamen 361000, China
| | - Bo Peng
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China
| | - Yangyang Xie
- Shaanxi Key Laboratory of Macromolecular Science and Technology, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Haitao Nie
- Queen Mary University of London Engineering School, Northwestern Polytechnical University, Xi'an 710072, China
| | - Chenhui Yang
- Shaanxi Key Laboratory of Macromolecular Science and Technology, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Qiuyu Zhang
- Shaanxi Key Laboratory of Macromolecular Science and Technology, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, China
| | - Xue-Ao Zhang
- College of Physical Science and Technology, Xiamen University, Xiamen 361000, China
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, China
| | - Yanhui Chen
- Shaanxi Key Laboratory of Macromolecular Science and Technology, Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology, School of Chemistry and Chemical Engineering, Northwestern Polytechnical University, Xi'an 710072, China
- Ningbo Institute of Northwestern Polytechnical University, Ningbo 315103, China
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Kim M, Ma KY, Kim H, Lee Y, Park JH, Shin HS. 2D Materials in the Display Industry: Status and Prospects. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205520. [PMID: 36539122 DOI: 10.1002/adma.202205520] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
With advances in flexible electronics, innovative foldable, rollable, and stretchable displays have been developed to maintain their performance under various deformations. These flexible devices can develop more innovative designs than conventional devices due to their light weight, high space efficiency, and practical convenience. However, developing flexible devices requires material innovation because the devices must be flexible and exhibit desirable electrical insulating/semiconducting/metallic properties. Recently, emerging 2D materials such as graphene, hexagonal boron nitride, and transition metal dichalcogenides have attracted considerable research attention because of their outstanding electrical, optical, and mechanical properties, which are ideal for flexible electronics. The recent progress and challenges of 2D material growth and display applications are reviewed and perspectives for exploring 2D materials for display applications are discussed.
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Affiliation(s)
- Minsu Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Kyung Yeol Ma
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Hyeongjoon Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | - Yeonju Lee
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
| | | | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
- Low-Dimensional Carbon Materials Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, South Korea
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Wang G, Huang J, Zhang S, Meng J, Chen J, Shi Y, Jiang J, Li J, Cheng Y, Zeng L, Yin Z, Zhang X. Wafer-Scale Single Crystal Hexagonal Boron Nitride Layers Grown by Submicron-Spacing Vapor Deposition. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301086. [PMID: 36919923 DOI: 10.1002/smll.202301086] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 02/21/2023] [Indexed: 06/15/2023]
Abstract
The direct growth of wafer-scale single crystal two-dimensional (2D) hexagonal boron nitride (h-BN) layer with a controllable thickness is highly desirable for 2D-material-based device applications. Here, for the first time, a facile submicron-spacing vapor deposition (SSVD) method is reported to achieve 2-inch single crystal h-BN layers with controllable thickness from monolayer to tens of nanometers on the dielectric sapphire substrates using a boron film as the solid source. In the SSVD growth, the boron film is fully covered by the same-sized sapphire substrate with a submicron spacing, leading to an efficient vapor diffusion transport. The epitaxial h-BN layer exhibits extremely high crystalline quality, as demonstrated by both a sharp Raman E2g vibration mode (12 cm-1 ) and a narrow X-ray rocking curve (0.10°). Furthermore, a deep ultraviolet photodetector and a ZrS2 /h-BN heterostructure fabricated from the h-BN layer demonstrate its fascinating properties and potential applications. This facile method to synthesize wafer-scale single crystal h-BN layers with controllable thickness paves the way to future 2D semiconductor-based electronics and optoelectronics.
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Affiliation(s)
- Gaokai Wang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jidong Huang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Siyu Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Junhua Meng
- Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Jingren Chen
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yiming Shi
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Faculty of Science, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Ji Jiang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Jingzhen Li
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Yong Cheng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Libin Zeng
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Zhigang Yin
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
| | - Xingwang Zhang
- Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China
- Joint Lab of Digital Optical Chip, Wuyi University, Jiangmen, 529020, P. R. China
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7
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Naclerio AE, Kidambi PR. A Review of Scalable Hexagonal Boron Nitride (h-BN) Synthesis for Present and Future Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2207374. [PMID: 36329667 DOI: 10.1002/adma.202207374] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2022] [Revised: 10/10/2022] [Indexed: 06/16/2023]
Abstract
Hexagonal boron nitride (h-BN) is a layered inorganic synthetic crystal exhibiting high temperature stability and high thermal conductivity. As a ceramic material it has been widely used for thermal management, heat shielding, lubrication, and as a filler material for structural composites. Recent scientific advances in isolating atomically thin monolayers from layered van der Waals crystals to study their unique properties has propelled research interest in mono/few layered h-BN as a wide bandgap insulating support for nanoscale electronics, tunnel barriers, communications, neutron detectors, optics, sensing, novel separations, quantum emission from defects, among others. Realizing these futuristic applications hinges on scalable cost-effective high-quality h-BN synthesis. Here, the authors review scalable approaches of high-quality mono/multilayer h-BN synthesis, discuss the challenges and opportunities for each method, and contextualize their relevance to emerging applications. Maintaining a stoichiometric balance B:N = 1 as the atoms incorporate into the growing layered crystal and maintaining stacking order between layers during multi-layer synthesis emerge as some of the main challenges for h-BN synthesis and the development of processes to address these aspects can inform and guide the synthesis of other layered materials with more than one constituent element. Finally, the authors contextualize h-BN synthesis efforts along with quality requirements for emerging applications via a technological roadmap.
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Affiliation(s)
- Andrew E Naclerio
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
| | - Piran R Kidambi
- Department of Chemical and Biomolecular Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Department of Mechanical Engineering, Vanderbilt University, Nashville, TN, 37212, USA
- Vanderbilt Institute of Nanoscale Sciences and Engineering, Vanderbilt University, Nashville, TN, 37212, USA
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8
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Gebert M, Bhattacharyya S, Bounds CC, Syed N, Daeneke T, Fuhrer MS. Passivating Graphene and Suppressing Interfacial Phonon Scattering with Mechanically Transferred Large-Area Ga 2O 3. NANO LETTERS 2023; 23:363-370. [PMID: 36410928 PMCID: PMC9837877 DOI: 10.1021/acs.nanolett.2c03492] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/04/2022] [Revised: 11/03/2022] [Indexed: 06/16/2023]
Abstract
We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga2O3 synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimeter-scale passivated and bare graphene on SiO2/Si indicates that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO2 by high-dielectric-constant Ga2O3 and the relatively high characteristic phonon frequencies of Ga2O3. Raman spectroscopy and electrical measurements indicate that Ga2O3 passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al2O3.
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Affiliation(s)
- Matthew Gebert
- School
of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
- ARC
Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Melbourne, Victoria 3800, Australia
| | - Semonti Bhattacharyya
- School
of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
- ARC
Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Melbourne, Victoria 3800, Australia
- Leiden
Institute of Physics, Leiden University, Niels Bohrweg 2, 2333 CA, Leiden, The Netherlands
| | - Christopher C Bounds
- School
of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
| | - Nitu Syed
- School
of Physics, The University of Melbourne, Parkville, Melbourne, Victoria 3010, Australia
- School
of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
| | - Torben Daeneke
- School
of Engineering, RMIT University, Melbourne, Victoria 3000, Australia
- ARC Centre
of Excellence in Future Low-Energy Electronics Technologies, RMIT University, Melbourne, Victoria 3000, Australia
| | - Michael S. Fuhrer
- School
of Physics and Astronomy, Monash University, Melbourne, Victoria 3800, Australia
- ARC
Centre of Excellence in Future Low-Energy Electronics Technologies, Monash University, Melbourne, Victoria 3800, Australia
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9
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Shtansky DV, Matveev AT, Permyakova ES, Leybo DV, Konopatsky AS, Sorokin PB. Recent Progress in Fabrication and Application of BN Nanostructures and BN-Based Nanohybrids. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:nano12162810. [PMID: 36014675 PMCID: PMC9416166 DOI: 10.3390/nano12162810] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 08/11/2022] [Accepted: 08/12/2022] [Indexed: 05/27/2023]
Abstract
Due to its unique physical, chemical, and mechanical properties, such as a low specific density, large specific surface area, excellent thermal stability, oxidation resistance, low friction, good dispersion stability, enhanced adsorbing capacity, large interlayer shear force, and wide bandgap, hexagonal boron nitride (h-BN) nanostructures are of great interest in many fields. These include, but are not limited to, (i) heterogeneous catalysts, (ii) promising nanocarriers for targeted drug delivery to tumor cells and nanoparticles containing therapeutic agents to fight bacterial and fungal infections, (iii) reinforcing phases in metal, ceramics, and polymer matrix composites, (iv) additives to liquid lubricants, (v) substrates for surface enhanced Raman spectroscopy, (vi) agents for boron neutron capture therapy, (vii) water purifiers, (viii) gas and biological sensors, and (ix) quantum dots, single photon emitters, and heterostructures for electronic, plasmonic, optical, optoelectronic, semiconductor, and magnetic devices. All of these areas are developing rapidly. Thus, the goal of this review is to analyze the critical mass of knowledge and the current state-of-the-art in the field of BN-based nanomaterial fabrication and application based on their amazing properties.
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10
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Wang X, Chang K, Liu W, Wang H, Chen J, Liu K, Chen J, Chen K. Enhanced near-field coupling and tunable topological transitions in hyperbolic van der Waals metasurfaces for optical nanomanipulation. NANOSCALE 2022; 14:7075-7082. [PMID: 35475504 DOI: 10.1039/d1nr08490a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Hyperbolic metasurfaces based on van der Waals (vdW) materials support propagation of extremely anisotropic polaritons towards nanoscale light compression and manipulation, and thus have great potential in the applications of planar hyperlenses, nanolasing, quantum optics, and ultrasensitive infrared spectroscopy. Two-dimensional hexagonal boron nitride (h-BN) subwavelength gratings as vdW metasurfaces can manipulate the propagation of hyperbolic polaritons at the level of single atomic layers, possessing a higher degree of field confinement and lower losses than conventional media. However, active manipulation of hyperbolic polaritonic waves in h-BN midinfrared metasurfaces remains elusive. Herein, we provide an effective strategy for tunable topological transitions in mid-infrared hyperbolic vdW metasurfaces (HMSs) via enhanced plasmon-phonon polaritons coupling. They are composed of in-plane heterostructures of thin-layer h-BN and monolayer graphene strips (iHBNG) as meta-atoms. The graphene-plasmon-enhanced near-field coupling enables a large tunability of light fields by tailoring the chemical potentials of graphene without frequency shift, which involves topological transitions of polaritonic modes, unidirectional polariton propagation, and local-density-of-state enhancement. Simulated visual near-field distributions of iHBNG metasurfaces reveal the unique transformations of hyperbolic polariton propagations, distinguished from that of individual h-BN and graphene metasurfaces. Our findings provide a platform of optical nanomanipulation towards emerging on-chip polaritonic devices.
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Affiliation(s)
- Xueli Wang
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
| | - Kaili Chang
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
| | - Weitao Liu
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
| | - Hongqin Wang
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
| | - Junying Chen
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
| | - Kaihui Liu
- State Key Laboratory for Mvaesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China
| | - Jianing Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Ke Chen
- Center for the Physics of Low-Dimensional Materials, School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
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