Lu MW, Chen SY, Zhang GL, Huang XH. Calculations of spin-polarized Goos-Hänchen displacement in magnetically confined GaAs/Al
x Ga
1-x As nanostructure modulated by spin-orbit couplings.
JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2018;
30:145302. [PMID:
29460849 DOI:
10.1088/1361-648x/aab0b2]
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Abstract
We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al x Ga1-x As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.
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