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Dong H, Jia Z, Jia W, Liang J, Wang Z, Xua B. Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes. Phys Chem Chem Phys 2022; 24:26708-26716. [DOI: 10.1039/d2cp03078k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Abstract
The characteristics of InGaAs quantum dot laser diodes have been investigated by inserting InGaAs wells of different thicknesses in the active zone.
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Affiliation(s)
- Hailiang Dong
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi, 030024, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi, 030024, P. R. China
| | - Zhigang Jia
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi, 030024, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi, 030024, P. R. China
| | - Wei Jia
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi, 030024, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi, 030024, P. R. China
| | - Jian Liang
- College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan, Shanxi, 030024, P. R. China
| | - Zhiyong Wang
- Institute of Laser Engineering, Beijing University of Technology, Beijing, 100124, P. R. China
| | - Bingshe Xua
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi, 030024, P. R. China
- Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan, Shanxi, 030024, P. R. China
- Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi, 710021, P. R. China
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Wang P, Chen Q, Wu X, Cao C, Wang S, Gong Q. Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure. NANOSCALE RESEARCH LETTERS 2016; 11:119. [PMID: 26932758 PMCID: PMC4773316 DOI: 10.1186/s11671-016-1339-3] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2015] [Accepted: 02/20/2016] [Indexed: 05/24/2023]
Abstract
InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift.
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Affiliation(s)
- Peng Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
| | - Qimiao Chen
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
| | - Xiaoyan Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
| | - Chunfang Cao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden.
| | - Qian Gong
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
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Wang P, Pan W, Wu X, Liu J, Cao C, Wang S, Gong Q. Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots. NANOSCALE RESEARCH LETTERS 2016; 11:280. [PMID: 27255900 PMCID: PMC4889962 DOI: 10.1186/s11671-016-1470-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/29/2016] [Accepted: 05/05/2016] [Indexed: 06/05/2023]
Abstract
InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.
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Affiliation(s)
- Peng Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Wenwu Pan
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Xiaoyan Wu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Juanjuan Liu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
| | - Chunfang Cao
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Shumin Wang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
- Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden
| | - Qian Gong
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
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