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Lewińska G, Jeleń P, Kucia Z, Sitarz M, Walczak Ł, Szafraniak B, Sanetra J, Marszalek KW. CdSe/ZnS quantum dots as a booster in the active layer of distributed ternary organic photovoltaics. BEILSTEIN JOURNAL OF NANOTECHNOLOGY 2024; 15:144-156. [PMID: 38317826 PMCID: PMC10840543 DOI: 10.3762/bjnano.15.14] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Accepted: 01/08/2024] [Indexed: 02/07/2024]
Abstract
Organic solar cells are a promising candidate for practical use because of their low material cost and simple production procedures. The challenge is selecting materials with the right properties and how they interrelate in the context of manufacturing the device. This paper presents studies on CdSe/ZnS nanodots as dopants in a polymer-fullerene matrix for application in organic solar cells. An assembly of poly(3-hexylthiophene-2,5-diyl) and 6,6-phenyl-C71-butyric acid methyl ester was used as the active reference layer. Absorption and luminescence spectra as well as the dispersion relations of refractive indices and extinction coefficient were investigated. The morphologies of the thin films were studied with atomic force microscopy. The chemical boundaries of the ternary layers were determined by Raman spectroscopy. Based on UPS studies, the energy diagram of the potential devices was determined. The resistivity of the layers was determined using impedance spectroscopy. Simulations (General-Purpose Photovoltaic Device Model) showed a performance improvement in the cells with quantum dots of 0.36-1.45% compared to those without quantum dots.
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Affiliation(s)
- Gabriela Lewińska
- AGH University of Krakow, Institute of Electronics, 30 Mickiewicza Ave, 30-059 Krakow, Poland
| | - Piotr Jeleń
- AGH University of Krakow, Faculty of Materials Science and Ceramics, Department of Silicate Chemistry and Macromolecular Compounds, 30 Mickiewicza Ave, 30-059 Krakow, Poland
| | - Zofia Kucia
- AGH University of Krakow, Faculty of Materials Science and Ceramics, Department of Silicate Chemistry and Macromolecular Compounds, 30 Mickiewicza Ave, 30-059 Krakow, Poland
| | - Maciej Sitarz
- AGH University of Krakow, Faculty of Materials Science and Ceramics, Department of Silicate Chemistry and Macromolecular Compounds, 30 Mickiewicza Ave, 30-059 Krakow, Poland
| | - Łukasz Walczak
- R&D Department, PREVAC sp. z o.o., Raciborska 61, 44-362 Rogów, Poland
| | - Bartłomiej Szafraniak
- AGH University of Krakow, Institute of Electronics, 30 Mickiewicza Ave, 30-059 Krakow, Poland
| | - Jerzy Sanetra
- retired, formerly: Cracow University of Technology, Institute of Physics, ul. Podchorążych 1, 30-084 Kraków, Poland
| | - Konstanty W Marszalek
- AGH University of Krakow, Institute of Electronics, 30 Mickiewicza Ave, 30-059 Krakow, Poland
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2
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Galán-González A, Pander P, MacKenzie RCI, Bowen L, Zeze DA, Borthwick RJ, Thompson RL, Dias FB, Chaudhry MU. Nanostructured Channel for Improving Emission Efficiency of Hybrid Light-Emitting Field-Effect Transistors. ACS PHOTONICS 2023; 10:4315-4321. [PMID: 38145168 PMCID: PMC10739997 DOI: 10.1021/acsphotonics.3c01080] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Revised: 11/20/2023] [Accepted: 11/22/2023] [Indexed: 12/26/2023]
Abstract
We report on the mechanism of enhancing the luminance and external quantum efficiency (EQE) by developing nanostructured channels in hybrid (organic/inorganic) light-emitting transistors (HLETs) that combine a solution-processed oxide and a polymer heterostructure. The heterostructure comprised two parts: (i) the zinc tin oxide/zinc oxide (ZTO/ZnO), with and without ZnO nanowires (NWs) grown on the top of the ZTO/ZnO stack, as the charge transport layer and (ii) a polymer Super Yellow (SY, also known as PDY-132) layer as the light-emitting layer. Device characterization shows that using NWs significantly improves luminance and EQE (≈1.1% @ 5000 cd m-2) compared to previously reported similar HLET devices that show EQE < 1%. The size and shape of the NWs were controlled through solution concentration and growth time, which also render NWs to have higher crystallinity. Notably, the size of the NWs was found to provide higher escape efficiency for emitted photons while offering lower contact resistance for charge injection, which resulted in the improved optical performance of HLETs. These results represent a significant step forward in enabling efficient and all-solution-processed HLET technology for lighting and display applications.
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Affiliation(s)
- Alejandro Galán-González
- Department
of Engineering, Durham University, Durham DH1 3LE, United Kingdom
- Instituto
de Carboquímica (ICB-CSIC), C/ Miguel Luesma Castán 4, 50018 Zaragoza, Spain
| | - Piotr Pander
- Faculty
of Chemistry, Silesian University of Technology, Strzody 9, 44-100 Gliwice, Poland
- Centre
for Organic and Nanohybrid Electronics, Silesian University of Technology, Konarskiego 22B, 44-100 Gliwice, Poland
| | | | - Leon Bowen
- Department
of Physics, Durham University, Durham DH1 3LE, United Kingdom
| | - Dagou A. Zeze
- Department
of Engineering, Durham University, Durham DH1 3LE, United Kingdom
| | - Robert J. Borthwick
- Department
of Engineering, Durham University, Durham DH1 3LE, United Kingdom
| | | | - Fernando B. Dias
- Department
of Physics, Durham University, Durham DH1 3LE, United Kingdom
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3
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Gong Q, Zhang W, He J, Ma F, Song L, Cheng L, Zhang J, Wang L, Hu Y. Simultaneously improving the quality factor and outcoupling efficiency of organic light-emitting field-effect transistors with planar microcavity. OPTICS EXPRESS 2023; 31:2480-2491. [PMID: 36785261 DOI: 10.1364/oe.479422] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/27/2022] [Accepted: 12/20/2022] [Indexed: 06/18/2023]
Abstract
Organic light-emitting field-effect transistors (OLEFETs) are regarded as an ideal device platform to achieve electrically pumped organic semiconductor lasers (OSLs). However, the incorporation of a high-quality resonator into OLEFETs is still challenging since the process usually induces irreparable deterioration to the electric-related emission performance of the device. We here propose a dual distributed Bragg reflector (DBR)-based planar microcavity, which is verified to be highly compatible with the OLEFETs. The dual DBR planar microcavity shows the great advantage of simultaneously promoting the quality (Q) factor and outcoupling efficiency of the device due to the reduced optical loss. As a result, a moderately high Q factor of ∼160, corresponding to EL spectrum linewidth as narrow as 3.2 nm, concomitantly with high outcoupling efficiency (∼7.1%) has been successfully obtained. Our results manifest that the dual DBR-based planar microcavity is a promising type of resonator, which might find potential applications in improving the spectra and efficiency performance of OLEFETs as well as in OLEFET-based electrically pumped OSLs.
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4
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Soldano C, Laouadi O, Gallegos-Rosas K. TCTA:Ir(ppy) 3 Green Emissive Blends in Organic Light-Emitting Transistors (OLETs). ACS OMEGA 2022; 7:43719-43728. [PMID: 36506198 PMCID: PMC9730476 DOI: 10.1021/acsomega.2c04718] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/26/2022] [Accepted: 11/07/2022] [Indexed: 06/17/2023]
Abstract
Organic light-emitting transistors are photonic devices combining the function of an electrical switch with the capability of generating light under appropriate bias conditions. Achieving high-performance light-emitting transistors requires high-mobility organic semiconductors, optimized device structures, and highly efficient emissive layers. In this work, we studied the optoelectronic response of green blends (TCTA:Ir(ppy)3) with varying doping concentrations in the limit of field-effect within a transistor device configuration. Increasing the dye concentration within the blend leads to a quenching of the photoluminescence signal; however, when implemented in a multilayer stack in a transistor, we observed an approximately 5-fold improvement in the light output for a 10% Ir(ppy)3 doping blend. We analyzed our results in terms of balanced charge transport in the emissive layer, which, in the limit of field-effect (horizontal component), leads to an improved exciton formation and decay process. While the performances of our devices are yet to achieve the state-of-the-art diode counterpart, this work demonstrates that engineering the emissive layer is a promising approach to enhance the light emission in field-effect devices. This opens the way for a broader exploitation of organic light-emitting transistors as alternative photonic devices in several fields, ranging from display technology to flexible and wearable electronics.
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Affiliation(s)
| | - Ornella Laouadi
- Department of Electronics
and Nanoengineering, School of Electrical Engineering, Aalto University, 02150Espoo, Finland
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5
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Chung DS, Davidson-Hall T, Cotella G, Lyu Q, Chun P, Aziz H. Significant Lifetime Enhancement in QLEDs by Reducing Interfacial Charge Accumulation via Fluorine Incorporation in the ZnO Electron Transport Layer. NANO-MICRO LETTERS 2022; 14:212. [PMID: 36333462 PMCID: PMC9636368 DOI: 10.1007/s40820-022-00970-x] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Accepted: 10/08/2022] [Indexed: 05/22/2023]
Abstract
ZnO nanoparticles are widely used for the electron transport layers (ETLs) of quantum dots light emitting devices (QLEDs). In this work we show that incorporating fluorine (F) into the ZnO ETL results in significant enhancement in device electroluminescence stability, leading to LT50 at 100 cd m-2 of 2,370,000 h in red QLED, 47X longer than the control devices. X-ray photo-electron spectroscopy, time-of-flight secondary ion mass spectroscopy, photoluminescence and electrical measurements show that the F passivates oxygen vacancies and reduces electron traps in ZnO. Transient photoluminescence versus bias measurements and capacitance-voltage-luminance measurements reveal that the CF4 plasma-treated ETLs lead to increased electron concentration in the QD and the QD/hole transport layer interface, subsequently decreasing hole accumulation, and hence the higher stability. The findings provide new insights into the critical roles that optimizing charge distribution across the layers play in influencing stability and present a novel and simple approach for extending QLED lifetimes.
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Affiliation(s)
- Dong Seob Chung
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, ON, N2L 3G1, Canada.
| | - Tyler Davidson-Hall
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, ON, N2L 3G1, Canada
| | - Giovanni Cotella
- Ipswich Research Centre, Huawei Technologies Research & Development (UK) Ltd., Phoenix House (B55), Adastral Park, Ipswich, IP5 3RE, UK
| | - Quan Lyu
- Ipswich Research Centre, Huawei Technologies Research & Development (UK) Ltd., Phoenix House (B55), Adastral Park, Ipswich, IP5 3RE, UK
| | - Peter Chun
- Ottawa IC Laboratory, Huawei Canada, 19 Allstate Parkway, Markham, ON, L3R 5B4, Canada
| | - Hany Aziz
- Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, ON, N2L 3G1, Canada.
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6
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Wu Q, Cao F, Wang S, Wang Y, Sun Z, Feng J, Liu Y, Wang L, Cao Q, Li Y, Wei B, Wong W, Yang X. Quasi-Shell-Growth Strategy Achieves Stable and Efficient Green InP Quantum Dot Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2200959. [PMID: 35618484 PMCID: PMC9313472 DOI: 10.1002/advs.202200959] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/17/2022] [Revised: 05/01/2022] [Indexed: 06/15/2023]
Abstract
Indium phosphide (InP) based quantum dots (QDs) have been known as an ideal alternative to heavy metals including QDs light emitters, such as cadmium selenium (CdSe) QDs, and show great promise in the next-generation solid-state lighting and displays. However, the electroluminescence performance of green InP QDs is still inferior to their red counterparts, due to the higher density of surface defects and the wider particle size distribution. Here, a quasi-shell-growth strategy for the growth of highly luminescent green InP/ZnSe/ZnS QDs is reported, in which the zinc and selenium monomers are added at the initial nucleation of InP stage to adsorb on the surface of InP cores that create a quasi-ZnSe shell rather than a bulk ZnSe shell. The quasi-ZnSe shell reduces the surface defects of InP core by passivating In-terminated vacancies, and suppresses the Ostwald ripening of InP core at high temperatures, leading to a photoluminescence quantum yield of 91% with a narrow emission linewidth of 36 nm for the synthesized InP/ZnSe/ZnS QDs. Consequently, the light-emitting diodes based on the green QDs realize a maximum luminance of 15606 cd m-2 , a peak external quantum efficiency of 10.6%, and a long half lifetime of > 5000 h.
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Affiliation(s)
- Qianqian Wu
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Fan Cao
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Sheng Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Yimin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Zhongjiang Sun
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Jingwen Feng
- BOE Technology Group Co., Ltd.Beijing100176P. R. China
| | - Yang Liu
- BOE Technology Group Co., Ltd.Beijing100176P. R. China
| | - Lin Wang
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Qiang Cao
- The Institute of Technological SciencesWuhan UniversityWuhan430072P. R. China
| | - Yunguo Li
- CAS Key Laboratory of Crust‐Mantle Materials and EnvironmentsSchool of Earth and Space SciencesUniversity of Science and Technology of ChinaHefei230026P. R. China
| | - Bin Wei
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
| | - Wai‐Yeung Wong
- Department of Applied Biology and Chemical TechnologyThe Hong Kong Polytechnic UniversityHung HomKowloonHong Kong999077P. R. China
| | - Xuyong Yang
- Key Laboratory of Advanced Display and System Applications of Ministry of EducationShanghai University149 Yanchang RoadShanghai200072P. R. China
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7
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Shen W, Yang L, Feng J, Chen Y, Wang W, Zhang J, Liu L, Cao K, Chen S. Environmentally Friendly Syntheses of Self-Healed and Printable CsPbBr 3 Nanocrystals. Inorg Chem 2022; 61:8604-8610. [PMID: 35617694 DOI: 10.1021/acs.inorgchem.2c01113] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Generally, solvents used to synthesize perovskite NCs are toxic, which leads to waste liquid pollution and environmental degradation. Herein, we developed a novel environmentally friendly polar solvent method to synthesize CsPbBr3 nanocrystals (NCs). Over 65% photoluminescence quantum yield (PLQYs) for NCs could be maintained over 45-850 h of storage time, and a maximum was 78% at 750 h. Such amazing stability in polar solvents is dominated by a ripening process, which heals surface defects. Additionally, their solid films also exhibited good moisture stability. Furthermore, CsPbBr3 NCs were applied to inkjet-printing to prepare high-quality patterned films.
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Affiliation(s)
- Wei Shen
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Liu Yang
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Jingting Feng
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Yanfeng Chen
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Wei Wang
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Jianbin Zhang
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Lihui Liu
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, 9 Wenyuan Road, Nanjing 210023, China
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