The performance evaluation of direct detection electron energy-loss spectroscopy at 200 kV and 80 kV accelerating voltages

Current opinion on the prospect of mapping electronic orbitals in the transmission electron microscope: State of the art, challenges and perspectives

The concept of electronic orbitals has enabled the understanding of a wide range of physical and chemical properties of solids through the definition of, for example, chemical bonding between atoms. In the transmission electron microscope, which is one of the most used and powerful analytical tools for high-spatial-resolution analysis of solids, the accessible quantity is the local distribution of electronic states. However, the interpretation of electronic state maps at atomic resolution in terms of electronic orbitals is far from obvious, not always possible, and often remains a major hurdle preventing a better understanding of the properties of the system of interest. In this review, the current state of the art of the experimental aspects for electronic state mapping and its interpretation as electronic orbitals is presented, considering approaches that rely on elastic and inelastic scattering, in real and reciprocal spaces. This work goes beyond resolving spectral variations between adjacent atomic columns, as it aims at providing deeper information about, for example, the spatial or momentum distributions of the states involved. The advantages and disadvantages of existing experimental approaches are discussed, while the challenges to overcome and future perspectives are explored in an effort to establish the current state of knowledge in this field. The aims of this review are also to foster the interest of the scientific community and to trigger a global effort to further enhance the current analytical capabilities of transmission electron microscopy for chemical bonding and electronic structure analysis.

Identifying and imaging polymer functionality at high spatial resolution with core-loss EELS

Electron energy loss spectroscopy (EELS) is a proven tool for probing materials chemistry at high spatial resolution. Core-loss EELS fine structure should allow measurement of local polymer chemistry. For organic materials, sensitivity to radiolysis is expected to limit the resolution achievable with EELS: but core-loss EELS has proven difficult at any resolution, yielding inconsistent spectra that compare unfavorably with theoretically analogous x-ray absorption spectra. Many of the previously identified shortcomings should not be limiting factors on modern equipment. This study establishes that EELS can generate identifiable carbon K-edge spectra for a range of common polymer types and chemistry, and demonstrates fine structure features matching prior x-ray absorption spectra. EELS fine structure features broaden intuitively with the instrument's energy resolution, and beam-induced features are readily differentiated by collecting spectra at a series of doses. The results are demonstrated with spectrum images of a model polymer blend, and used to estimate practical pixel sizes that can be used for mapping core-loss EELS as a function of electron dose.

Towards Electron Energy Loss Compton Spectra Free From Dynamical Diffraction Artifacts

The Compton signal in electron energy loss spectroscopy (EELS) is used to determine the projected electron momentum density of states for the solid. A frequent limitation however is the strong dynamical scattering of the incident electron beam within a crystalline specimen, i.e. Bragg diffracted beams can be additional sources of Compton scattering that distort the measured profile from its true shape. The Compton profile is simulated via a multislice method that models dynamical scattering both before and after the Compton energy loss event. Simulations indicate the importance of both the specimen illumination condition and EELS detection geometry. Based on this, a strategy to minimize diffraction artifacts is proposed and verified experimentally. Furthermore, an inversion algorithm to extract the projected momentum density of states from a Compton measurement performed under strong diffraction conditions is demonstrated. The findings enable a new route to more accurate electron Compton data from crystalline specimens.

Applications of a novel electron energy filter combined with a hybrid-pixel direct electron detector for the analysis of functional oxides by STEM/EELS and energy-filtered imaging

The performance and suitability of a new electron energy filter in combination with a hybrid pixel, direct electron detector for analytical (scanning) transmission electron microscopy are demonstrated using four examples. The STEM-EELS capabilities of the CEOS Energy Filtering and Imaging Device (CEFID) were tested with focus on weak signals and high spatio-temporal resolution. A multiferroic, multilayer structure of REMnO₃ (RE = Yb, Er, Tb, Y), grown on yttria-stabilized zirconia (YSZ), is used to exemplify that this new instrumental setup produces valuable electron energy-loss spectroscopy (EELS) data at high energy losses even when using short acquisition times, providing detailed chemical information about the interfaces in this complex multilayer sample. Another functional oxide, namely a ferromagnetic La₂NiMnO₆ thin film grown on SrTiO₃, demonstrates that atomically resolved spectrum images can be recorded, using short dwell times and moderate beam currents in order to warrant the integrity of the sample. In a third example, inhomogeneously Er-doped YSZ shows by EELS spectrum imaging that elements at low concentrations can be detected semi-quantitatively, uncovering the expected layered Er distribution but revealing substantial interdiffusion. In a final example, we simply demonstrate that the hybrid pixel detector in combination with the energy filter can also be used for energy-filtered imaging and thus for elemental mapping complementary to EELS in scanning transmission mode.

Comparison of detection limits of direct-counting CMOS and CCD cameras in EELS experiments

The noise performance and the detection limits of a direct-counting complementary metal-oxide semiconductor (CMOS) K2 camera and a charge-coupled device (CCD) camera in electron energy loss spectroscopy (EELS) experiments were evaluated. In the case of a single spectrum acquired at the shortest dwell times (2.5 ms for K2 and 1 μs for CCD), the detection limit, defined as three times the standard deviation of the spectral noise (3σ), was very low (1 e^-/channel) in the counting-mode spectrum acquired with the K2 camera compared with that acquired with the CCD camera (5 e^-/channel). By contrast, the spectral noise of the K2 camera changed depending on the dwell time because of the multiple read-outs related to its fixed frame rate (400 fps). The spectral noise of the K2 camera was greater than that of the CCD camera when the dwell time was longer than ∼30 ms. Thus, the CCD camera was found to still be useful when detecting a very small number of electrons using a long acquisition time. In the case of an accumulated spectrum obtained by acquiring 10,000 spectra after subtracting the ultra-high-quality dark reference signal, the detection limits per read-out were ∼0.016 and ∼0.025 e^-/channel/read-out for the K2 and CCD cameras, respectively. Because both cameras have advantages and disadvantages with respect to their detection limit, speed, and dynamic range, their proper use is important.

Imaging the Spatial Distribution of Electronic States in Graphene Using Electron Energy-Loss Spectroscopy: Prospect of Orbital Mapping

The spatial distributions of antibonding π^{*} and σ^{*} states in epitaxial graphene multilayers are mapped using electron energy-loss spectroscopy in a scanning transmission electron microscope. Inelastic channeling simulations validate the interpretation of the spatially resolved signals in terms of electronic orbitals, and demonstrate the crucial effect of the material thickness on the experimental capability to resolve the distribution of unoccupied states. This work illustrates the current potential of core-level electron energy-loss spectroscopy towards the direct visualization of electronic orbitals in a wide range of materials, of huge interest to better understand chemical bonding among many other properties at interfaces and defects in solids.

Quantifying the performance of a hybrid pixel detector with GaAs:Cr sensor for transmission electron microscopy

Hybrid pixel detectors (HPDs) have been shown to be highly effective for diffraction-based and time-resolved studies in transmission electron microscopy, but their performance is limited by the fact that high-energy electrons scatter over long distances in their thick Si sensors. An advantage of HPDs compared to monolithic active pixel sensors is that their sensors do not need to be fabricated from Si. We have compared the performance of the Medipix3 HPD with a Si sensor and a GaAs:Cr sensor using primary electrons in the energy range of 60-300 keV. We describe the measurement and calculation of the detectors' modulation transfer function (MTF) and detective quantum efficiency (DQE), which show that the performance of the GaAs:Cr device is markedly superior to that of the Si device for high-energy electrons.

Near-Atomic-Scale Mapping of Electronic Phases in Rare Earth Nickelate Superlattices

Nanoscale mapping of the distinct electronic phases characterizing the metal-insulator transition displayed by most of the rare-earth nickelate compounds is fundamental for discovering the true nature of this transition and the possible couplings that are established at the interfaces of nickelate-based heterostructures. Here, we demonstrate that this can be accomplished by using scanning transmission electron microscopy in combination with electron energy-loss spectroscopy. By tracking how the O K and Ni L edge fine structures evolve across two different NdNiO₃/SmNiO₃ superlattices, displaying either one or two metal-insulator transitions depending on the individual layer thickness, we are able to determine the electronic state of each of the individual constituent materials. We further map the spatial configuration associated with their metallic/insulating regions, reaching unit cell spatial resolution. With this, we estimate the width of the metallic/insulating boundaries at the NdNiO₃/SmNiO₃ interfaces, which is measured to be on the order of four unit cells.