Mercury Chalcogenide Quantum Dots: Material Perspective for Device Integration

Unveiling cutting-edge developments: architectures and nanostructured materials for application in optoelectronic artificial synapses

One possible result of low-level characteristics in the traditional von Neumann formulation system is brain-inspired photonics technology based on human brain idea. Optoelectronic neural devices, which are accustomed to imitating the sensory role of biological synapses by adjusting connection measures, can be used to fabricate highly reliable neurologically calculating devices. In this case, nanosized materials and device designs are attracting attention since they provide numerous potential benefits in terms of limited cool contact, rapid transfer fluidity, and the capture of photocarriers. In addition, the combination of classic nanosized photodetectors with recently generated digital synapses offers promising results in a variety of practical applications, such as data processing and computation. Herein, we present the progress in constructing improved optoelectronic synaptic devices that rely on nanomaterials, for example, 0-dimensional (quantum dots), 1-dimensional, and 2-dimensional composites, besides the continuously developing mixed heterostructures. Furthermore, the challenges and potential prospects linked with this field of study are discussed in this paper.

Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots

Heavy-metal-free III-V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near-infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light-emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13.3%, a turn-on voltage of 1.5V, and a maximum radiance of 12 Wsr-1m-2. Importantly, the LEDs exhibit an extensive emission dynamic range, characterized by a nearly linear correlation between emission intensity and current density, which can be attributed to the efficient passivation provided by the thick ZnSe shell. The obtained results are comparable to state-of-the-art PbS QD LEDs. Furthermore, it should be stressed not only that the fabricated LEDs are fully RoHS-compliant but also that the emitting InAs QDs are prepared via a synthetic route based on a non-pyrophoric, cheap, and commercially available as precursor, namely tris(dimethylamino)-arsine.

The "energy gap law" for mid-infrared nanocrystals

Colloidal quantum dots are of increasing interest for mid-infrared detection and emission, but device performances will vastly benefit from reducing the non-radiative recombination. Empirically, the photoluminescence quantum yield decreases exponentially toward the mid-infrared, which appears similar to the energy gap law known for molecular fluorescence in the near-infrared. For molecules, the mechanism is electron-vibration coupling and fast internal vibrational relaxation. Here, we explore the possible mechanisms for inorganic quantum dots. The primary mechanism is assigned to an electric dipole near-field energy transfer from the quantum dot electronic transitions to the infrared absorption of surface organic ligands and then to the multiphonon absorption of the quantum dot inorganic core or the surrounding inorganic matrix. In order to obtain luminescent quantum dots in the 3-10 μm range, we motivate the importance of using inorganic matrices, which have a higher infrared transparency compared to organic materials. At longer wavelengths, inter-quantum dot energy transfer is noted to be much faster than radiative relaxation, indicating that bright mid-infrared colloidal quantum dot films might then benefit from dilution.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature

HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W-1 and 6.9 × 107 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τr = 1.9 μs and a falling time of τf = 1.5 μs at 10 kHz under 1550 nm light illumination.

Infrared Imaging Using Thermally Stable HgTe/CdS Nanocrystals

Transferring nanocrystals (NCs) from the laboratory environment toward practical applications has raised new challenges. HgTe appears as the most spectrally tunable infrared colloidal platform. Its low-temperature synthesis reduces the growth energy cost yet also favors sintering. Once coupled to a read-out circuit, the Joule effect aggregates the particles, leading to a poorly defined optical edge and large dark current. Here, we demonstrate that CdS shells bring the expected thermal stability (no redshift upon annealing, reduced tendency to form amalgams, and preservation of photoconduction after an atomic layer deposition process). The electronic structure of these confined particles is unveiled using k.p self-consistent simulations showing a significant exciton binding energy of ∼200 meV. After shelling, the material displays a p-type behavior that favors the generation of photoconductive gain. The latter is then used to increase the external quantum efficiency of an infrared imager, which now reaches 40% while presenting long-term stability.

Uncooled High Detectivity Mid-Infrared Photoconductor Using HgTe Quantum Dots and Nanoantennas

Using a metal/insulator/metal (MIM) structure with a gold nanoantenna array made by electron beam lithography, the responsivity of a HgTe colloidal quantum dot film is enhanced in the mid-infrared. Simulations indicate that the spatially averaged peak spectral absorption of an 80 nm film is 60%, enhanced 23-fold compared to that of the same film on a bare sapphire substrate. The field intensity enhancement is focused near the antenna tips, being 20-fold 100 nm away, which represents only 1% of the total area and up to 1000-fold at the tips. The simulated polarized absorption spectra are in good agreement with the experiments, with a strong resonance around 4 μm. A responsivity of 0.6 A/W is obtained at a 1 V bias. Noise measurements separate the 1/f noise from the generation-recombination white noise and give a spatially averaged photoconductive gain of 0.3 at 1 V bias. The spatially averaged peak detectivity is improved 15-fold compared to the same film on a sapphire substrate without an MIM structure. The experimental peak detectivity reaches 9 × 109 Jones at 2650 cm-1 and 80 kHz, decreasing at lower frequencies. The MIM structure also enhances the spatially averaged peak photoluminescence of the CQD film by 16-fold, which is a potential Purcell enhancement. The good agreement between simulations and measurements confirms the viability of lithographically designed nanoantenna structures for vastly improving the performance of mid-IR colloidal quantum dot photoconductors. Further improvements will be possible by matching the optically enhanced and current collection areas.

InAs Nanorod Colloidal Quantum Dots with Tunable Bandgaps Deep into the Short-Wave Infrared

InAs colloidal quantum dots (CQDs) have emerged as candidate lead- and mercury-free solution-processed semiconductors for infrared technology due to their appropriate bulk bandgap, which can be tuned by quantum confinement, and promising charge-carrier transport properties. However, the lack of suitable arsenic precursors and readily accessible synthesis conditions have limited InAs CQDs to smaller sizes (<7 nm), with bandgaps largely restricted to <1400 nm in the near-infrared spectral window. Conventional InAs CQD synthesis requires highly reactive, hazardous arsenic precursors, which are commercially scarce, making the synthesis hard to control and study. Here, we present a controlled synthesis strategy (using only readily available and less reactive precursors) to overcome the practical wavelength limitation of InAs CQDs, achieving monodisperse InAs nanorod CQDs with bandgaps tunable from ∼1200 to ∼1800 nm, thus crossing deep into the short-wave infrared (SWIR) region. By controlling the reactivity through in situ precursor complexation, we isolate the reaction mechanism, producing InAs nanorod CQDs that display narrow excitonic features and efficient carrier multiplication. Our work enables InAs CQDs for a wider range of SWIR applications.

Multiresonant Grating to Replace Transparent Conductive Oxide Electrode for Bias Selected Filtering of Infrared Photoresponse

Optoelectronic devices rely on conductive layers as electrodes, but they usually introduce optical losses that are detrimental to the device performances. While the use of transparent conductive oxides is established in the visible region, these materials show high losses at longer wavelengths. Here, we demonstrate a photodiode based on a metallic grating acting as an electrode. The grating generates a multiresonant photonic structure over the diode stack and allows strong broadband absorption. The obtained device achieves the highest performances reported so far for a midwave infrared nanocrystal-based detector, with external quantum efficiency above 90%, detectivity of 7 × 1011 Jones at 80 K at 5 μm, and a sub-100 ns time response. Furthermore, we demonstrate that combining different gratings with a single diode stack can generate a bias reconfigurable response and develop new functionalities such as band rejection.

Short-Wavelength Infrared Organic Light-Emitting Diodes from A-D-A'-D-A Type Small Molecules with Emission beyond 1100 nm

Short-wavelength infrared (SWIR) organic light-emitting diodes (OLEDs) have attracted great interest due to their potential applications in biological imaging, infrared lighting, optical communication, environmental monitoring, and surveillance. Due to an intrinsic limitation posed by the energy-gap law, achieving high-brightness in SWIR OLEDs remains a challenge. Herein, the study reports the use of novel A-D-A'-D-A type small molecules NTQ and BTQ for high-performance SWIR OLEDs. Benefiting from multiple D-A effect in conjugated skeleton, the small molecules NTQ and BTQ exhibit narrow optical gaps of 1.23 and 1.13 eV, respectively. SWIR electroluminescence (EL) emission from OLEDs based on NTQ and BTQ is achieved, with emission peaks at 1140 and 1175 nm, respectively. Not only owing to a negligible efficiency roll-off across the full range of applied current density but also the ability to afford a high operation current density of 5200 mA cm-2 , the resultant SWIR OLEDs based on NTQ exhibit a maximal radiant exitance of =1.12 mW cm-2 . Furthermore, the NTQ-based OLEDs also possess sub-gap turn-on voltage of 0.85 V, which is close to the physical limits derived from the generalized Kirchhoff and Planck equation. This work demonstrates that A-D-A'-D-A type small molecules offer significant promise for NIR/SWIR emitting material innovations.

Hot-Injection Synthesis of HgTe Nanoparticles: Shape Control and Growth Mechanisms

Understanding the growth mechanisms of HgTe nanoparticles (NPs) with varied shapes is crucial for their applications in infrared photodetection. Here, we investigated the growth mechanisms of HgTe NPs with nanorod, sphere, and tetrahedral shapes in depth. The HgTe NPs with a nanorod shape are obtained at low reaction temperatures and formed by breaking tetrapod branches, while HgTe NPs with sphere and tetrahedron shapes have been further achieved at increased reaction temperatures. The systematic crystal analyses demonstrate this effective shape control is related to the synergic effect among the anisotropic passivation of oleylamine, surface free energy, and reaction temperatures. Our findings have deepened the understanding of shape control of the HgTe NPs and inspired a growing passion in the design and engineering of infrared photodetectors using HgTe NPs.

Quantum Dot-Based Fluorometric Sensor for Hg(II) in Water Customizable for Onsite Visual Detection

An easy naked-eye detection technique for mercuric ions in water using silanized quantum dots is demonstrated. Cadmium selenide quantum dots were synthesized and rendered water soluble by silica overcoating. The quantum dot emission was instantly turned off by the mercuric ions in the analyte, enabling visual detection. The emission quenching was associated with a concomitant bathochromic shift, both in the absorption and emission profiles. The underlying mechanism is a permanent surface modification of quantum dots by mercuric ions, altering the electronic structure and, in turn, the photophysical properties. The results confirmed the potential of this simple system to be customized for on-site visual detection of mercury contamination in water bodies, biological fluids, and soil with high selectivity and sensitivity.

Colloidal Semiconductor Nanocrystal Lasers and Laser Diodes

Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics. These devices have been pursued across a wide range of materials including polymers, small molecules, perovskites, and chemically prepared colloidal semiconductor nanocrystals, also commonly referred to as colloidal quantum dots. The latter materials are especially attractive for implementing optical-gain media as in addition to being compatible with inexpensive and easily scalable chemical techniques, they offer multiple advantages derived from a zero-dimensional character of their electronic states. These include a size-tunable emission wavelength, low optical gain thresholds, and weak sensitivity of lasing characteristics to variations in temperature. Here we review the status of colloidal nanocrystal lasing devices, most recent advances in this field, outstanding challenges, and the ongoing progress toward technological viable devices including colloidal quantum dot laser diodes.

Mercury chalcogenide colloidal quantum dots for infrared photodetection: from synthesis to device applications

Commercial infrared (IR) photodetectors based on epitaxial growth inorganic semiconductors, e.g. InGaAs and HgCdTe, suffer from high fabrication cost, poor compatibility with silicon integrated circuits, rigid substrates and bulky cooling systems, which leaves a large development window for the emerging solution-processable semiconductor-based photo-sensing devices. Among the solution-processable semiconductors, mercury (Hg) chalcogenide colloidal quantum dots (QDs) exhibit unique ultra-broad and tuneable photo-responses in the short-wave infrared to far-wave infrared range, and have demonstrated photo-sensing abilities comparable to the commercial products, especially with advances in high operation temperature. Here, we provide a focused review on photodetectors employing Hg chalcogenide colloidal QDs, with a comprehensive summary of the essential progress in the areas of synthesis methods of QDs, property control, device engineering, focus plane array integration, etc. Besides imaging demonstrations, a series of Hg chalcogenide QD photodetector based flexible, integrated, multi-functional applications are also summarized. This review shows prospects for the next-generation low-cost highly-sensitive and compact IR photodetectors based on solution-processable Hg chalcogenide colloidal QDs.

Narrow homogeneous linewidths and slow cooling dynamics across infrared intra-band transitions in n-doped HgSe colloidal quantum dots

Intra-band transitions in colloidal quantum dots (QDs) are promising for opto-electronic applications in the mid-IR spectral region. However, such intra-band transitions are typically very broad and spectrally overlapping, making the study of individual excited states and their ultrafast dynamics very challenging. Here, we present the first full spectrum two-dimensional continuum infrared (2D CIR) spectroscopy study of intrinsically n-doped HgSe QDs, which exhibit mid-infrared intra-band transitions in their ground state. The obtained 2D CIR spectra reveal that underneath the broad absorption line shape of ∼500 cm^-1, the transitions exhibit surprisingly narrow intrinsic linewidths with a homogeneous broadening of 175-250 cm^-1. Furthermore, the 2D IR spectra are remarkably invariant, with no sign of spectral diffusion dynamics at waiting times up to 50 ps. Accordingly, we attribute the large static inhomogeneous broadening to the distribution of size and doping level of the QDs. In addition, the two higher-lying P-states of the QDs can be clearly identified in the 2D IR spectra along the diagonal with a cross-peak. However, there is no indication of cross-peak dynamics indicating that, despite the strong spin-orbit coupling in HgSe, transitions between the P-states must be longer than our maximum waiting time of 50 ps. This study illustrates a new frontier of 2D IR spectroscopy enabling the study of intra-band carrier dynamics in nanocrystalline materials across the entire mid-infrared spectrum.

Lithium-Ion Glass Gating of HgTe Nanocrystal Film with Designed Light-Matter Coupling

Nanocrystals' (NCs) band gap can be easily tuned over the infrared range, making them appealing for the design of cost-effective sensors. Though their growth has reached a high level of maturity, their doping remains a poorly controlled parameter, raising the need for post-synthesis tuning strategies. As a result, phototransistor device geometry offers an interesting alternative to photoconductors, allowing carrier density control. Phototransistors based on NCs that target integrated infrared sensing have to (i) be compatible with low-temperature operation, (ii) avoid liquid handling, and (iii) enable large carrier density tuning. These constraints drive the search for innovative gate technologies beyond traditional dielectric or conventional liquid and ion gel electrolytes. Here, we explore lithium-ion glass gating and apply it to channels made of HgTe narrow band gap NCs. We demonstrate that this all-solid gate strategy is compatible with large capacitance up to 2 µF·cm^-2 and can be operated over a broad range of temperatures (130-300 K). Finally, we tackle an issue often faced by NC-based phototransistors:their low absorption; from a metallic grating structure, we combined two resonances and achieved high responsivity (10 A·W^-1 or an external quantum efficiency of 500%) over a broadband spectral range.

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals

Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of materials could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, NCs offer a larger spectral tunability without lattice-matching constraints. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves the detectivity above 10⁸ Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.

Mapping the Energy Landscape from a Nanocrystal-Based Field Effect Transistor under Operation Using Nanobeam Photoemission Spectroscopy

As the field of nanocrystal-based optoelectronics matures, more advanced techniques must be developed in order to reveal the electronic structure of nanocrystals, particularly with device-relevant conditions. So far, most of the efforts have been focused on optical spectroscopy, and electrochemistry where an absolute energy reference is required. Device optimization requires probing not only the pristine material but also the material in its actual environment (i.e., surrounded by a transport layer and an electrode, in the presence of an applied electric field). Here, we explored the use of photoemission microscopy as a strategy for operando investigation of NC-based devices. We demonstrate that the method can be applied to a variety of materials and device geometries. Finally, we show that it provides direct access to the metal-semiconductor interface band bending as well as the distance over which the gate effect propagates in field-effect transistors.

High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

Due to thermal carriers generated by a narrow mid-infrared energy gap, cooling is always necessary to achieve ideal photodetection. In quantum dot (QD), the electron thermal generation should be reduced with quantum confinement in all three dimensions. As a result, there would be a great potential to realize high-operating-temperature (HOT) QD mid-IR photodetectors, though not yet achieved. Taking the advantages of colloidal nanocrystals' solution processability and precise doping control by surface dipoles, this work demonstrates a HOT mid-infrared photodetector with a QD gradient homojunction. The detector achieves background-limited performance with D^* = 2.7 × 10¹¹ Jones on 4.2 μm at 80 K, above 10¹¹ Jones until 200 K, above 10¹⁰ Jones until 280 K, and 7.6 × 10⁹ Jones on 3.5 μm at 300 K. The external quantum efficiency also achieves more than 77% with responsivity 2.7 A/W at zero bias. The applications such as spectrometers, chemical sensors, and thermal cameras, are also approved, which motivate interest in low-cost, solution-processed and high-performance mid-infrared photodetection beyond epitaxial growth bulk photodetectors.

Indium arsenide quantum dots: an alternative to lead-based infrared emitting nanomaterials

Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.

Helmholtz Resonator Applied to Nanocrystal-Based Infrared Sensing

While the integration of nanocrystals as an active medium for optoelectronic devices progresses, light management strategies are becoming required. Over recent years, several photonic structures (plasmons, cavities, mirrors, etc.) have been coupled to nanocrystal films to shape the absorption spectrum, tune the directionality, and so on. Here, we explore a photonic equivalent of the acoustic Helmholtz resonator and propose a design that can easily be fabricated. This geometry combines a strong electromagnetic field magnification and a narrow channel width compatible with efficient charge conduction despite hopping conduction. At 80 K, the device reaches a responsivity above 1 A·W^-1 and a detectivity above 10¹¹ Jones (3 μm cutoff) while offering a significantly faster time-response than vertical geometry diodes.

Vanishing Confinement Regime in Terahertz HgTe Nanocrystals Studied under Extreme Conditions of Temperature and Pressure

While HgTe nanocrystals (NCs) in the mid-infrared region have reached a high level of maturity, their far-infrared counterparts remain far less studied, raising the need for an in-depth investigation of the material before efficient device integration can be considered. Here, we explore the effect of temperature and pressure on the structural, spectroscopic, and transport properties of HgTe NCs displaying an intraband absorption at 10 THz. The temperature leads to a very weak modulation of the spectrum as opposed to what was observed for strongly confined HgTe NCs. HgTe NC films present ambipolar conduction with a clear prevalence of electron conduction as confirmed by transistor and thermoelectric measurements. Under the application of pressure, the material undergoes phase transitions from the zinc blende to cinnabar phase and later to the rock salt phase which we reveal using joint X-ray diffraction and infrared spectroscopy measurements. We discuss how the pressure existence domain of each phase is affected by the particle size.

Halide perovskites as disposable epitaxial templates for the phase-selective synthesis of lead sulfochloride nanocrystals

Colloidal chemistry grants access to a wealth of materials through simple and mild reactions. However, even few elements can combine in a variety of stoichiometries and structures, potentially resulting in impurities or even wrong products. Similar issues have been long addressed in organic chemistry by using reaction-directing groups, that are added to a substrate to promote a specific product and are later removed. Inspired by such approach, we demonstrate the use of CsPbCl₃ perovskite nanocrystals to drive the phase-selective synthesis of two yet unexplored lead sulfochlorides: Pb₃S₂Cl₂ and Pb₄S₃Cl₂. When homogeneously nucleated in solution, lead sulfochlorides form Pb₃S₂Cl₂ nanocrystals. Conversely, the presence of CsPbCl₃ triggers the formation of Pb₄S₃Cl₂/CsPbCl₃ epitaxial heterostructures. The phase selectivity is guaranteed by the continuity of the cationic subnetwork across the interface, a condition not met in a hypothetical Pb₃S₂Cl₂/CsPbCl₃ heterostructure. The perovskite domain is then etched, delivering phase-pure Pb₄S₃Cl₂ nanocrystals that could not be synthesized directly.

Phase-selective approaches, such using reaction-directing groups, are often seen in traditional organic chemistry and catalysis. Here authors use perovskite nanocrystals as disposable templates to drive the phase-selective synthesis of two colloidal nanomaterials, the lead sulfohalides Pb₃S₂Cl₂ and Pb₄S₃Cl₂.

Intraband Transitions of Nanocrystals Transforming from Lead Selenide to Self-doped Silver Selenide Quantum Dots by Cation Exchange

In search of heavy metal-free mid-IR active colloidal materials, self-doped silver selenide colloidal quantum dots (CQDs) can be an alternative offering tunable mid-IR wavelength with a narrow bandwidth. One of the challenges in the study of the intraband transition is developing a method to widen the intraband transition energy range as well as reducing the toxicity of the materials. Here, we present Ag_xSe (x > 2) CQDs exhibiting an intraband transition up to 0.39 eV, produced by the cation exchange (CE) method from PbSe CQDs. The major electronic transition efficiently changes from the SWIR band gap of PbSe CQDs to the mid-IR intraband transition of the Ag_xSe CQDs by the CE. The intraband exciton is verified by examining the absorption and emission of the CE Ag_xSe CQDs as well as their applications on electrochemical mid-IR luminescence and mid-IR intraband photodetectors.

Synthetic Mechanisms in the Formation of SnTe Nanocrystals

Infrared active colloidal semiconducting nanocrystals (NCs) are important for applications including photodetectors and photovoltaics. While much research has been conducted on nanocrystalline materials such as the Pb and Hg chalcogenides, less toxic alternatives such as SnTe have been far less explored. Previous synthetic work on SnTe NCs have characterized photophysical properties of the nanoparticles. This study focuses on understanding the fundamental chemical mechanisms involved in SnTe NC formation, with the aim to improve synthetic outcomes. The solvent oleylamine, common to all SnTe syntheses, is found to form a highly reactive, heteroleptic Sn-oleylamine precursor that is the primary molecular Sn species initiating NC formation and growth. Further, the capping ligand oleic acid (OA) reacts with this amine to produce tin oxide (SnO_x), facilitating the formation of an NC SnO_x shell. Therefore, the use of OA during synthesis is counterproductive to the formation of stoichiometric SnTe nanoparticles. The knowledge of chemical reaction mechanisms creates a foundation for the production of high-quality, unoxidized, and stoichiometric SnTe NCs.

Intraband dynamics of mid-infrared HgTe quantum dots

Femtosecond pump-probe spectroscopy reveals ultrafast carrier dynamics in mid-infrared (MIR) colloidal HgTe nanoparticles with a bandgap of 2.5 μm. We observe intraband relaxation processes after photoexcitation ranging from resonant excitation up to the multi-exciton generation (MEG) regime by identifying initially excited states from atomic effective pseudopotential calculations. Our study elucidates the earliest dynamics below 10 ps in this technologically relevant material. With increasing photon energy, we find carrier relaxation times as long as 2.1 ps in the MEG regime close to the ionization threshold of the particles. For all photon energies, we extract a constant mean carrier energy dissipation rate of 0.36 eV ps^-1 from which we infer negligible impact of the density of states on carrier cooling.

Nonlinear Absorption and Refraction of Picosecond and Femtosecond Pulses in HgTe Quantum Dot Films

We report measurements of the saturated intensities, saturable absorption, and nonlinear refraction in 70-nm thick films containing 4 nm HgTe quantum dots. We demonstrate strong nonlinear refraction and saturable absorption in the thin films using tunable picosecond and femtosecond pulses. Studies were carried out using tunable laser pulses in the range of 400-1100 nm. A significant variation of the nonlinear refraction along this spectral range was demonstrated. The maximal values of the nonlinear absorption coefficients and nonlinear refractive indices determined within the studied wavelength range were -2.4 × 10^-5 cm² W^-1 (in the case of 28 ps, 700 nm probe pulses) and -3 × 10^-9 cm² W^-1 (in the case of 28 ps, 400 nm probe pulses), respectively. Our studies show that HgTe quantum dots can be used in different fields e.g., as efficient emitters of high-order harmonics of ultrashort laser pulses or as laser mode-lockers.

Bias Tunable Spectral Response of Nanocrystal Array in a Plasmonic Cavity

Nanocrystals (NCs) have gained considerable attention for their broadly tunable absorption from the UV to the THz range. Nevertheless, their optical features suffer from a lack of tunability once integrated into optoelectronic devices. Here, we show that bias tunable aspectral response is obtained by coupling a HgTe NC array with a plasmonic resonator. Up to 15 meV blueshift can be achieved from a 3 μm absorbing wavelength structure under a 3 V bias voltage when the NC exciton is coupled with a mode of the resonator. We demonstrate that the blueshift arises from the interplay between hopping transport and inhomogeneous absorption due to the presence of the photonic structure. The observed tunable spectral response is qualitatively reproduced in simulation by introducing a bias-dependent diffusion length in the charge transport. This work expands the realm of existing NC-based devices and paves the way toward light modulators.

Colloidal synthesis of metal chalcogenide nanomaterials from metal-organic precursors and capping ligand effect on electrocatalytic performance: progress, challenges and future perspectives

Renewable and sustainable functional nanomaterials, which can be employed in alternative green energy sources, are highly desirable. Transition metal chalcogenides are potential catalysts for processes resulting in energy generation and storage. In order to optimize their catalytic performance, high phase purity and precise control over shape and size are indispensable. Metal-organic precursors with pre-formed bonds between the metal and the chalcogenide atoms are advantageous in synthesizing phase pure transition metal chalcogenides with controlled shape and sizes. This can be achieved by the decomposition of metal-organic precursors in the presence of suitable surfactants/capping agents. However, the recent studies on electrocatalysis at the nanoscale level reveal that the capping agents attached to their surface have a detrimental effect on their efficiency. The removal of surfactants from active sites to obtain bare surface nanoparticles is necessary to enhance catalytic activity. Herein, we have discussed the properties of different metal-organic precursors and the role of surfactants in the colloidal synthesis of metal chalcogenide nanomaterials. Moreover, the effect of surfactants on their electrocatalytic performance, the commonly used strategies for removing surfactants from the surface of nanomaterials and the future perspectives are reviewed.

Correlating Structure and Detection Properties in HgTe Nanocrystal Films

HgTe nanocrystals (NCs) enable broadly tunable infrared absorption, now commonly used to design light sensors. This material tends to grow under multipodic shapes and does not present well-defined size distributions. Such point generates traps and reduces the particle packing, leading to a reduced mobility. It is thus highly desirable to comprehensively explore the effect of the shape on their performance. Here, we show, using a combination of electron tomography and tight binding simulations, that the charge dissociation is strong within HgTe NCs, but poorly shape dependent. Then, we design a dual-gate field-effect-transistor made of tripod HgTe NCs and use it to generate a planar p-n junction, offering more tunability than its vertical geometry counterpart. Interestingly, the performance of the tripods is higher than sphere ones, and this can be correlated with a stronger Te excess in the case of sphere shapes which is responsible for a higher hole trap density.