Efficient Luminescence from CsPbBr3 Nanoparticles Embedded in Cs4PbBr6

Unraveling the Ultrasonic-Assisted Synthesis of Green-Emitting CsPbBr3@Cs4PbBr6: Reaction Process, Luminescence Property, and Display Application

The pursuit of stable and highly emissive perovskite materials has garnered increasing attention in optoelectronic applications. Green-emitting CsPbBr3@Cs4PbBr6, as a green-emissive material in the solid-state form, has great potential as a color conversion material for full-color displays. However, it is a challenge to achieve mass preparation under ambient conditions. Meanwhile, the formation mechanism is ambiguous. This study reports a ligand-free and rapid mass synthesis of nanomicrosized CsPbBr3@Cs4PbBr6 solid via an ultrasonic-assisted method. The synthesized CsPbBr3@Cs4PbBr6 solids exhibit uniform morphology, high stability, and solid-state quantum efficiency of approximately 55%. Moreover, the transformation mechanism from Pb-Br complexes in the synthesis process is fully investigated by monitoring the phase and spectral evolution. By employing it as a green emitter, the obtained white light-emitting diode (LED) device shows high performance with a correlation color temperature of 7635 K and a wide color gamut of 123% NTSC. This study offers a low-cost and simple operation mass production method for solid-state perovskite powders with excellent chemical stability. Additionally, it provides new insights into the formation mechanism of highly efficient perovskite materials and promotes their practical applications.

Tunable Emissive CsPbBr3/Cs4PbBr6 Quantum Dots Engineered by Discrete Phase Transformation for Enhanced Photogating in Field-Effect Phototransistors

Precise control of quantum structures in hybrid nanocrystals requires advancements in scientific methodologies. Here, on the design of tunable CsPbBr3/Cs4PbBr6 quantum dots are reported by developing a unique discrete phase transformation approach in Cs4PbBr6 nanocrystals. Unlike conventional hybrid systems that emit solely in the green region, this current strategy produces adjustable luminescence in the blue (450 nm), cyan (480 nm), and green (510 nm) regions with high photoluminescence quantum yields up to 45%, 60%, and 85%, respectively. Concentration-dependent studies reveal that phase transformation mechanisms and the factors that drive CsBr removal occur at lower dilutions while the dissolution-recrystallization process dominates at higher dilutions. When the polymer-CsPbBr3/Cs4PbBr6 integrated into a field-effected transistor the resulting phototransistors featured enhanced photosensitivity exceeding 105, being the highest reported for an n-type phototransistor, while maintaining good transistor performances as compared to devices consisting of polymer-CsPbBr3 NCs.

Highly luminescent dual-phase CsPbBr3/Cs4PbBr6 microcrystals for a wide color gamut for backlight displays

Cesium lead bromide perovskite nanocrystals (NCs) embedded in Cs₄PbBr₆ or CsPb₂Br₅ matrices forming core/shell structures are promising luminescent materials that exhibit remarkable photoluminescence properties meeting the need in a wide range of applications while overcoming stability challenges. Here, we report the large-scale, ligand-free synthesis of dual-phase Cs₄PbBr₆/CsPbBr₃ microcrystals (MCs) using ultrasonication at room temperature, exhibiting a high photoluminescence quantum yield (PLQY) of 82.7% and good stability. High-resolution transmission electron microscopy and X-ray photoelectron characterization confirm that CsPbBr₃ NCs are embedded in the Cs₄PbBr₆ matrix-forming CsPbBr₃/Cs₄PbBr₆ dual-phase structure. The evolution of the luminescence properties with temperature suggests that the strong green emission results from direct exciton recombination in the isolated [PbBr₆]^4- octahedra, which possess a large exciton binding energy of 283.6 meV. As revealed from their emission intensities, the dual-phase CsPbBr₃/Cs₄PbBr₆ MCs demonstrate excellent stability against ultraviolet irradiation (76%), good moisture resistance (42.7%), and good thermal tolerance (51%). It is understood that such excellent PLQY and stability are due to the surface passivation of the CsPbBr₃ NCs attributed to the large bandgap as well as the isolated [PbBr₆]^4- octahedra separated by Cs⁺ ions in the Cs₄PbBr₆ crystal lattice. Finally, the suitability of the green-emitting CsPbBr₃/Cs₄PbBr₆ material for achieving white-light emission and a wide color gamut is evaluated by constructing a prototype white light-emitting diode (w-LED) using CsPbBr₃/Cs₄PbBr₆ and red-emitting K₂SiF₆:Mn⁴⁺ materials taken in different weight ratios and combined with a blue light-emitting InGaN LED chip (λ = 455 nm). The constructed w-LED device exhibits the color coordinates (0.3315, 0.3289), an efficacy of 68 lm W^-1, a color rendering index of 87%, a color temperature of 5564 K, and a wide color gamut of ∼118.78% (NTSC) and ∼88.69% (Rec. 2020) with RGB color filters in the CIE 1931 color space. Therefore, based on our present findings, we strongly believe that the dual-phase CsPbBr₃/Cs₄PbBr₆ material is a promising green-emitting phosphor for use in w-LEDs as the backlight of display systems.

Mechanochemistry-driven engineering of 0D/3D heterostructure for designing highly luminescent Cs–Pb–Br perovskites

Embedding metal-halide perovskite particles within an insulating host matrix has proven to be an effective strategy for revealing the outstanding luminescence properties of perovskites as an emerging class of light emitters. Particularly, unexpected bright green emission observed in a nominally pure zero-dimensional cesium–lead–bromide perovskite (Cs₄PbBr₆) has triggered intensive research in better understanding the serendipitous incorporation of emissive guest species within the Cs₄PbBr₆ host. However, a limited controllability over such heterostructural configurations in conventional solution-based synthesis methods has limited the degree of freedom in designing synthesis routes for accessing different structural and compositional configurations of these host–guest species. In this study, we provide means of enhancing the luminescence properties in the nominal Cs₄PbBr₆ powder through a guided heterostructural configuration engineering enabled by solid-state mechanochemical synthesis. Realized by an in-depth study on time-dependent evaluation of optical and structural properties during the synthesis of Cs₄PbBr₆, our target-designed synthesis protocol to promote the endotaxial formation of Cs₄PbBr₆/CsPbBr₃ heterostructures provides key insights for understanding and designing kinetics-guided syntheses of highly luminescent perovskite emitters for light-emitting applications.

While emission and stability of metal–halide perovskites can be enhanced through heterostructural encapsulation, a controlled synthesis route to such structures is not trivial to realize. Here, the authors design a mechanochemistry-driven protocol for synthesizing highly luminescent CsPbBr₃/Cs₄PbBr₆ heterostructures.

Stable and Bright Electroluminescent Devices utilizing Emissive 0D Perovskite Nanocrystals Incorporated in a 3D CsPbBr3 Matrix

The 0D cesium lead halide perovskite Cs₄ PbBr₆ has drawn remarkable interest due to its highly efficient robust green emission compared to its 3D CsPbBr₃ counterpart. However, seizing the advantages of the superior photoluminescence properties for practical light-emitting devices remains elusive. To date, Cs₄ PbBr₆ has been employed only as a higher-bandgap nonluminescent matrix to passivate or provide quantum/dielectric confinement to CsPbBr₃ in light-emitting devices and to enhance its photo-/thermal/environmental stability. To resolve this disparity, a novel solvent engineering method to incorporate highly luminescent 0D Cs₄ PbBr₆ nanocrystals (perovskite nanocrystals (PNCs)) into a 3D CsPbBr₃ film, forming the active emissive layer in single-layer perovskite light-emitting electrochemical cells (PeLECs) is designed. A dramatic increase of the maximum external quantum efficiency and luminance from 2.7% and 6050 cd m^-2 for a 3D-only PeLEC to 8.3% and 11 200 cd m^-2 for a 3D-0D PNC device with only 7% by weight of 0D PNCs is observed. The majority of this increase is driven by the efficient inherent emission of the 0D PNCs, while the concomitant morphology improvement also contributes to reduced leakage current, reduced hysteresis, and enhanced operational lifetime (half-life of 129 h), making this one of the best-performing LECs reported to date.

Cryogenic Scintillation Performance of Cs4PbI6 Perovskite Single Crystals

All-inorganic Cs₄PbI₆ single crystals (SCs) is emerging scintillators for radiation detection. In this study, we report on the X-ray scintillation properties of Cs₄PbI₆ SCs at the temperature range of 50-290 K. The temperature-dependent radioluminescence (RL) spectrum and decay time were investigated. It was found that the RL spectra show very pronounced temperature-dependent changes in the overall shape. The RL intensity increases with a decrease in the temperature under X-ray excitation. The emission bands at 318, 360, and 554 nm are attributed to the near-band-edge emission in Cs₄PbI₆ SCs, the ³P₁ → ¹S₀ transition of the Pb²⁺ ion, and the emission of δ-CsPbI₃ aggregates dispersed in the Cs₄PbI₆ SC matrix, respectively. With decreasing temperature, the fast and slow decay times tend to slow down and are estimated to be 46.0 ns (33.22%) and 820 ns (66.78%) at 50 K, which are far superior to that of the common cryogenic scintillator. These cryogenic scintillation characteristics of Cs₄PbI₆ SCs demonstrate its potential for cryogenic detection.

Formation and Near-Infrared Emission of CsPbI3 Nanoparticles Embedded in Cs4PbI6 Crystals

Cs₄PbI₆, as a rarely investigated member of the Cs₄PbX₆ (X is a halogen element) family, has been successfully synthesized at low temperatures, and the synthetic conditions have been optimized. Metal iodides such as LiI, KI, NiI₂, CoI₂, and ZnI₂, as additives, play an important role in enhancing the formation of the Cs₄PbI₆ microcrystals. ZnI₂ with the lowest dissociation energy is the most efficient additive to supply iodide ions, and its amount of addition has also been optimized. Strong red to near-infrared (NIR) emission properties have been detected, and its optical emission centers have been identified to be numerous embedded perovskite-type α-CsPbI₃ nanocrystallites (∼5 nm in diameter) based on investigations of temperature- and pressure-dependent photoluminescent properties. High-resolution transmission electron microscopy was used to detect these hidden nanoparticles, although the material was highly beam-sensitive and confirmed a "raisin bread"-like structure of the Cs₄PbI₆ crystals. A NIR mini-LED for the biological application has been successfully fabricated using as-synthesized Cs₄PbI₆ crystals. This work provides information for the future development of infrared fluorescent nanoscale perovskite materials.

Recent progress of zero-dimensional luminescent metal halides

This review provides in-depth insight into the structure–luminescence–application relationship of 0D all-inorganic/organic–inorganic hybrid metal halide luminescent materials.

Highly Luminescent CsPbBr3@Cs4PbBr6 Nanocrystals and Their Application in Electroluminescent Emitters

Zero-dimensional perovskite nanocrystals (NCs) are becoming the most attractive material due to their excellent optical performance and better stability compared with high-dimensional perovskite. However, their application in electroluminescent (EL) emitters for high-quality displays is still limited. In this work, we successfully achieved CsPbBr₃@Cs₄PbBr₆ NCs around 13.9 ± 0.2 nm by using the hot-injection method. Additional SnBr₂ was mixed in the PbBr₂ precursor to provide extra Br^- ions and reduce the excessive amount of Pb²⁺ ions to promote the formation of CsPbBr₃@Cs₄PbBr₆. Time resolution photoluminescence analysis indicated that the green emission of our CsPbBr₃@Cs₄PbBr₆ NCs originated from the embedded CsPbBr₃ NCs, which corresponds to our previous research. The Cs₄PbBr₆ crystals passivated the surface of CsPbBr₃ NCs, resulting in the absence of trions for the high photoluminescence quantum yield. The as-synthesized CsPbBr₃@Cs₄PbBr₆ NCs were used to fabricate quantum dot light-emitting diode (QLED) devices with the highest current efficiency of 4.89 cd/A. This is the best performance of the CsPbBr₃@Cs₄PbBr₆-system QLED device, which reveals the great potential of CsPbBr₃@Cs₄PbBr₆ NCs and will inspire further study of zero-dimensional perovskite composite NCs for EL emitters.