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Chen X, Xue H, Wen Y, You K, Jiang B, Ding G, Zhou K, Zhao Z, Yan Y, Zhang M, Roy VAL, Han ST, Li F, Kuo CC, Zhou Y. Dual-Mode Reconfigurable Split-Gate Logic Transistor through Van der Waals Integration. J Phys Chem Lett 2024:9979-9986. [PMID: 39315653 DOI: 10.1021/acs.jpclett.4c02397] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/25/2024]
Abstract
As silicon-based transistors approach their physical size limitations, two-dimensional material-based reconfigurable functional electronic devices are considered the most promising novel device architectures beyond Moore strategies. While these devices have garnered significant attention, they often require complex device fabrication processes and extra electric fields. Additionally, the device performance is usually limited by the metal-semiconductor interface properties. In this Letter, we have constructed a reconfigurable logic device based on a WSe2 transistor with a nanofloating gate and split-gates through van der Waals integration. This device achieves a small Schottky barrier height due to the van der Waals contacts. By varying the split-gate biases, we can realize volatile reconfigurable homojunctions as well as AND, OR, NOR, and NAND logic operations with just a single device. Furthermore, with the charge trapping effect of nanofloating gate, we can also achieve nonvolatile reconfigurable homojunctions, as well as AND and OR logic operations. The volatile and nonvolatile logic operations are similar to the short-term plasticity and long-term plasticity, respectively, of synapses in the human brain. This work offers a potential approach for creating novel reconfigurable functional electronic devices with a simple fabrication process and low cost.
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Affiliation(s)
- Xue Chen
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
- School of Physics, Changchun Normal University, Changchun 130032, P. R. China
| | - Haozhe Xue
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yu Wen
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kai You
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Bei Jiang
- Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, P. R. China
| | - Guanglong Ding
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
- Zhuhai Construction Quality Supervision and Inspection Station, Zhuhai, 519015, P. R. China
| | - Zherui Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yan Yan
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
| | - Meng Zhang
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
| | - Vellaisamy A L Roy
- School of Science and Technology, School of Science and Technology, Hong Kong Metropolitan University, Ho Man Tin, Hong Kong 999077, P. R. China
| | - Su-Ting Han
- Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University, Hong Kong 999077, P. R. China
| | - Feng Li
- College of Civil and Transportation Engineering, Shenzhen University, Shenzhen 518060, P. R. China
- National Key Laboratory of Green and Durable Road Engineering under Extreme Environments, Shenzhen University, Shenzhen 518060, P. R. China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, National Taipei University of Technology, Taipei 10608, Taiwan
- Advanced Research Center for Green Materials Science and Technology, National Taiwan University, Taipei 10617, Taiwan
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
- State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, Shenzhen 518060, P. R. China
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Electrospun Nanofibers for Integrated Sensing, Storage, and Computing Applications. APPLIED SCIENCES-BASEL 2022. [DOI: 10.3390/app12094370] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Electrospun nanofibers have become the most promising building blocks for future high-performance electronic devices because of the advantages of larger specific surface area, higher porosity, more flexibility, and stronger mechanical strength over conventional film-based materials. Moreover, along with the properties of ease of fabrication and cost-effectiveness, a broad range of applications based on nanomaterials by electrospinning have sprung up. In this review, we aim to summarize basic principles, influence factors, and advanced methods of electrospinning to produce hundreds of nanofibers with different structures and arrangements. In addition, electrospun nanofiber based electronics composed of both two-terminal and three-terminal devices and their practical applications are discussed in the fields of sensing, storage, and computing, which give rise to the further integration to realize a comprehensive and brain-like system. Last but not least, the emulation of biological synapses through artificial synaptic transistors and additionally optoelectronics in recent years are included as an important step toward the construction of large-scale, multifunctional systems.
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Vessally E, Musavi M, Poor Heravi MR, Hosseinian A. The interaction between ethionamide and pristine, Si-, Ga-, and Al-doped boron nitride nanoflakes: A computational study. J Sulphur Chem 2021. [DOI: 10.1080/17415993.2021.1973469] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/20/2022]
Affiliation(s)
- Esmail Vessally
- Department of Chemistry, Payame Noor University, Tehran, Iran
| | - Mahla Musavi
- Department of Chemistry, Payame Noor University, Tehran, Iran
| | | | - Akram Hosseinian
- School of Engineering Science, College of Engineering, University of Tehran, Tehran, Iran
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Guo L, Mu B, Li MZ, Yang B, Chen RS, Ding G, Zhou K, Liu Y, Kuo CC, Han ST, Zhou Y. Stacked Two-Dimensional MXene Composites for an Energy-Efficient Memory and Digital Comparator. ACS APPLIED MATERIALS & INTERFACES 2021; 13:39595-39605. [PMID: 34378376 DOI: 10.1021/acsami.1c11014] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional MXene has enormous potential for application in industry and academia owing to its surface hydrophilicity and excellent electrochemical properties. However, the application of MXene in optoelectronic memory and logical computing is still facing challenges. In this study, an optoelectronic resistive random access memory (RRAM) based on silver nanoparticles (Ag NPs)@MXene-TiO2 nanosheets (AMT) was prepared through a low-cost and facile hydrothermal oxidation process. The fabricated device exhibited a typical bipolar switching behavior and controllable SET voltage. Furthermore, we successfully demonstrated a 4-bit in-memory digital comparator with AMT RRAMs, which can replace five logic gates in a traditional approach. The AMT-based digital comparator may open the door for future integrated functions and applications in optoelectronic data storage and simplify the complex logic operations.
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Affiliation(s)
- Liangchao Guo
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Boyuan Mu
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ming-Zheng Li
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Baidong Yang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ruo-Si Chen
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yanhua Liu
- Shanghai Institute of Space Power-Sources, Shanghai 200245, P. R. China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen 518060, P. R. China
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