P Doping Promotes the Spontaneous Visible-Light-Driven Photocatalytic Water Splitting in Isomorphic Type II GaSe/InS Heterostructure

Ferroelectric polarization promotes a CdS/In2Se3 heterostructure for photocatalytic water splitting

The rapid recombination of photogenerated electrons and holes greatly limits the efficiency of photocatalyst based on semiconductor. In order to address this issue, we predicted a novel ferroelectric polarized heterojunction photocatalyst, CdS/In2Se3, which enables the spontaneous overall water splitting reaction. The CdS/In2Se3 heterojunction exhibits a band-edge staggered alignment and it is easy to form a direct Z-scheme charge transfer pathway. Besides, the built-in electric field (Eint) in the CdS/In2Se3 heterojunction promoted the charge transfer of CdS/In2Se3, leading to an improved separating efficiency of photo-generated carriers. Moreover, the vertical intrinsic polarized electric field (Ep) not only alters the position of the band edge but also reduces the bandgap limitations commonly associated with photocatalytic materials. Furthermore, the CdS/In2Se3 heterojunctions demonstrate separate catalytic activity for the hydrogen evolution reaction (HER) on the surface of the CdS monolayer and oxygen evolution reaction (OER) on the surface of In2Se3, respectively. Notably, the CdS/In2Se3-down configuration enables spontaneous photocatalytic water splitting in pH = 7, while the CdS/In2Se3-up configuration efficiently facilitates the HER process. This study highlights the significant advantages of CdS/In2Se3 heterojunctions as photocatalytic materials, offering unique insights into the development and research of this promising heterojunction architecture.

The direct Z-scheme character and roles of S vacancy in BiOCl/Bi2S3-(001) heterostructures for superior photocatalytic activity: a hybrid density functional investigation

Given some current speculations and controversies regarding the type of BiOCl/Bi2S3-(001) heterostructure in experiments, it is of great importance to clarify these controversies and further explain the relevant experimental results. In this work, based on first-principles hybrid density functional calculations, it is verified that the BiOCl/Bi2S3-(001) heterostructure is a direct Z-scheme photocatalyst with high photo-generated carrier separation efficiency and strong redox ability that can react with O2 and OH- to produce photocatalytic active species of superoxide ions (˙O2-) and hydroxyl radicals (˙OH), respectively. This is consistent with the experimental findings and explains the excellent photocatalytic performance of the BiOCl/Bi2S3-(001) heterostructure in experiments. Besides, excitingly, it is found that the optical absorption, built-in electric field intensity, interlayer recombination probability, hydrogen evolution reaction ability, and the difference in electron-hole mobility are further enhanced via S vacancy introduction in BiOCl/Bi2S3-(001). Therefore, the significant roles of S vacancy in further improving the photocatalytic properties of the BiOCl/Bi2S3-(001) heterostructure are profoundly revealed. This work can provide valuable theoretical insights for designing the superior direct Z-scheme BiOCl/VS-Bi2S3-(001) heterostructure with promising photocatalytic properties.

Z-scheme Al2SeTe/GaSe and Al2SeTe/InS van der Waals heterostructures for photocatalytic water splitting

Designing Z-scheme van der Waals (vdW) heterostructured photocatalysts is a promising strategy for developing highly efficient overall water splitting. Herein, by employing density functional theory calculations, we systematically investigated the stability, electronic structures, photocatalytic and optical properties of Al2SeTe, GaSe, and InS monolayers and their corresponding vdW heterostructures. Interestingly, electronic structures show that all vdW heterostructures have direct band gaps, which is conducive to the transition of electrons from the valence band to the conduction band. Notably, Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures possess large overpotentials for Z-scheme photocatalytic water splitting, as proved by the results of band edge positions and band structure bending. Moreover, these vdW heterostructures exhibit good optical absorption in ultraviolet and visible light regions. We believe that our findings will open a new avenue for the modulation and development of Al2TeSe/GaSe and Al2TeSe/InS vdW heterostructures for photocatalytic water splitting.

A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic application

The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (10⁴cm²V^-1s^-1), and strong visible to ultraviolet light absorption (10⁴-10⁵cm^-1) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain. The band offsets and band gap of the NGyne/GaSe heterostructure can be regulated under applied vertical electric field and strain efficiently. Further study reveals that the photoelectric conversion efficiency of the NGyne/GaSe heterostructure is vastly improved under a negative electric field and reaches up to 25.09%. Meanwhile, near-free electron states are induced under a large applied electric field, leading to the NGyne/GaSe heterostructure transform from semiconductors to metal. Our results indicate that the NGyne/GaSe heterostructure will have extremely potential in optoelectronic devices, especially solar cells.

Bimetallic Alloys b-AsxP1-x at High Concentration Differences: Ideal for Photonic Devices

Black arsenic phosphorus (b-As_xP_1-x) is expected to be one of the primary materials for future photonic devices. However, the x-factor is randomly estimated and applied in photonic devices in current studies, rather than systematically analyzing it for a comprehensive understanding. Herein, As_xP_1-x switches from a direct band gap semiconductor to an indirect band gap one at x = 0.75. As_xP_1-x at x ≤ 0.25 is capable of broadband absorption, while b-As_xP_1-x at x ≥ 0.75 can only absorb at specific wavelengths in the perspective of the electron energy transition. Additionally, the optoelectronic response of the integral field-effect transistor configurations constructed with b-As_xP_1-x is investigated systematically as a photodetector device. The photonic response characteristics show high polarization sensitivity at x ≥ 0.75, but a typical circuit system signal at x ≤ 0.25. These results suggest that b-As_xP_1-x with high concentration differences is a perfect candidate for photonic material.

An analysis of Schottky barrier in silicene/Ga2SeS heterostructures by employing electric field and strain

Two-dimensional materials are leading the way in nanodevice applications thanks to their various advantages. Although two-dimensional materials show promise for many applications, they have certain limitations. In the last decade, the increasing demand for the applications of novel two-dimensional materials has accelerated heterostructure studies in this field. Hence, restoring the combination of two-dimensional heterostructured materials has been reported. In this paper, we show that the effect of the external electric field and biaxial strain on the silicene/Ga₂SeS heterostructure has a critical impact on the tuning of the Schottky barrier height. The findings such as the variation of the electronic band gap, interlayer charge transfer, total dipole moment, and n-type/p-type Schottky barrier transitions of the silicene/Ga₂SeS heterostructure under external effects imply that the device performance can be adjusted with Janus 2D materials.

Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi2N4 van der Waals Heterostructure

Following the successful synthesis of single-layer metallic Janus MoSH and semiconducting MoSi₂N₄, we investigate the electronic and interfacial features of metal/semiconductor MoSH/MoSi₂N₄ van der Waals (vdW) contact. We find that the metal/semiconductor MoSH/MoSi₂N₄ contact forms p-type Schottky contact (p-ShC type) with small Schottky barrier (SB), suggesting that Janus MoSH can be considered as an efficient metallic contact to MoSi₂N₄ semiconductor with high charge injection efficiency. The electronic structure and interfacial features of the MoSH/MoSi₂N₄ vdW heterostructure are tunable under strain and electric fields, which give rise to the SB change and the conversion from p-ShC to n-ShC type and from ShC to Ohmic contact. These findings could provide a new pathway for the design of optoelectronic applications based on metal/semiconductor MoSH/MoSi₂N₄ vdW heterostructures.

Type-II Band Alignment and Tunable Optical Absorption in MoSSe/InS van der Waals Heterostructure

In this work, we study the electronic structure, the effective mass, and the optical properties of the MoSSe/InS van der Waals heterostructures (vdWHs) by first-principles calculations. The results indicate that the MoSSe/InS vdWH is an indirect band gap semiconductor and has type-Ⅱ band alignment in which the electrons and holes located at the InS and the MoSSe side, respectively. The band edge position, the band gap and the optical absorption of the MoSSe/InS vdWH can be tuned when biaxial strains are applied. In addition, compared with MoSSe and InS monolayers, the optical absorption of the MoSSe/InS vdWH is improved both in the visible and the ultraviolet regions. These findings indicate that the MoSSe/InS vdWHs have potential applications in optoelectronic devices.