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Li F, Li Y, Zhao Y, Liu M, Kan E, Li Q, Wan Y. Synthesis of graphene nanomesh with symmetrical fractal patterns via hydrogen-free chemical vapor deposition. NANOTECHNOLOGY 2022; 34:045601. [PMID: 36301681 DOI: 10.1088/1361-6528/ac9d42] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2022] [Accepted: 10/24/2022] [Indexed: 06/16/2023]
Abstract
Graphene nanomesh (GNM), an emerging graphene nanostructure with a tunable bandgap, has gained tremendous interests owing to its great potentials in the fields of high-performance field-effect transistors, electrochemical sensors, new generation of spintronics and energy converters. In previous works, GNM has been successfully obtained on copper foil surface by employing hydrogen as an etching agent. A more facile, and low-cost strategy for the preparation of GNM is required. Here, we demonstrated a direct and feasible means for synthesizing large-area GNM with symmetrical fractal patterns via a hydrogen-free chemical vapor deposition method. The influences of the growth time and the gas source flow on the morphology of GNM patterns were systematically investigated. Then, we exhibited the key reaction details and proposed a growth mechanism of the GNM synthesis during the hydrogen-free chemical vapor deposition process. This work provides a valuable guidance for quality control in GNM mass production.
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Affiliation(s)
- Fang Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - You Li
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Yibin Zhao
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Mingyan Liu
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Erjun Kan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
| | - Qiongyu Li
- School of Electronic, Electrical Engineering and Physics, Fujian University of Technology, Fuzhou 350118, People's Republic of China
| | - Yi Wan
- MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing, Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China
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Gupta D, Chauhan V, Kumar R. Sputter deposition of 2D MoS2 thin films -A critical review from a surface and structural perspective. INORG CHEM COMMUN 2022. [DOI: 10.1016/j.inoche.2022.109848] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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Ben Salk S, Pandey RR, Pham PHQ, Zhou D, Wei W, Cochez G, Vignaud D, Pallecchi E, Burke PJ, Happy H. Physical and Electrical Characterization of Synthesized Millimeter Size Single Crystal Graphene, Using Controlled Bubbling Transfer. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:2528. [PMID: 34684969 PMCID: PMC8541598 DOI: 10.3390/nano11102528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/27/2021] [Revised: 09/15/2021] [Accepted: 09/18/2021] [Indexed: 12/03/2022]
Abstract
In this work, we have investigated the influence of the transfer process on the monocrystalline graphene in terms of quality, morphology and electrical properties by analyzing the data obtained from optical microscopy, scanning electron microscopy, Raman spectroscopy and electrical characterizations. The influence of Cu oxidation on graphene prior to the transfer is also discussed. Our results show that the controlled bubbling electrochemical delamination transfer is an easy and fast transfer technique suitable for transferring large single crystals graphene without degrading the graphene quality. Moreover, Raman spectroscopy investigation reveals that the Cu surface oxidation modifies the strain of the graphene film. We have observed that graphene laying on unoxidized Cu is subject to a biaxial strain in compression, while graphene on Cu oxide is subject to a biaxial strain in tension. However, after graphene was transferred to a host substrate, these strain effects were strongly reduced, leaving a homogeneous graphene on the substrate. The transferred single crystal graphene on silicon oxide substrate was used to fabricate transmission line method (TLM) devices. Electrical measurements show low contact resistance ~150 Ω·µm, which confirms the homogeneity and high quality of transferred graphene.
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Affiliation(s)
- Soukaina Ben Salk
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Reetu Raj Pandey
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Phi H. Q. Pham
- Department of Electrical Engineering and Computer Science, University of California, Irvine, CA 92697, USA; (P.H.Q.P.); (P.J.B.)
| | - Di Zhou
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Wei Wei
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Guillaume Cochez
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Dominique Vignaud
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Emiliano Pallecchi
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
| | - Peter J. Burke
- Department of Electrical Engineering and Computer Science, University of California, Irvine, CA 92697, USA; (P.H.Q.P.); (P.J.B.)
| | - Henri Happy
- University of Lille, CNRS, UMR 8520—IEMN—Institut d’Electronique de Microélectronique et de Nanotechnologie, F-59000 Lille, France; (S.B.S.); (R.R.P.); (D.Z.); (W.W.); (G.C.); (D.V.)
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Moreno-López JC, Fedi F, Argentero G, Carini M, Chimborazo J, Meyer J, Pichler T, Mateo-Alonso A, Ayala P. Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate. THE JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES 2020; 124:22150-22157. [PMID: 33072238 PMCID: PMC7552092 DOI: 10.1021/acs.jpcc.0c06415] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2020] [Revised: 08/31/2020] [Indexed: 06/01/2023]
Abstract
The on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with ∼2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp2 substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C16H6N6).
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Affiliation(s)
| | - Filippo Fedi
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
| | | | - Marco Carini
- POLYMAT,
University of the Basque Country UPV/EHU, Avenida de Tolosa 72, E-20018 Donostia-San Sebastian, Spain
| | | | - Jannik Meyer
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
| | - Thomas Pichler
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
| | - Aurelio Mateo-Alonso
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
- Ikerbasque,
Basque Foundation for Science, 48013 Bilbao, Spain
| | - Paola Ayala
- Faculty
of Physics, University of Vienna, 1090 Wien, Austria
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