Janus TiXY Monolayers with Tunable Berry Curvature

Valley-Dependent Electronic Properties of Metal Monochalcogenides GaX and Janus Ga2XY (X, Y = S, Se, and Te)

Two-dimensional (2D) materials have shown outstanding potential for new devices based on their interesting electrical properties beyond conventional 3D materials. In recent years, new concepts such as the valley degree of freedom have been studied to develop valleytronics in hexagonal lattice 2D materials. We investigated the valley degree of freedom of GaX and Janus GaXY (X, Y = S, Se, Te). By considering the spin-orbit coupling (SOC) effect in the band structure calculations, we identified the Rashba-type spin splitting in band structures of Janus Ga2SSe and Ga2STe. Further, we confirmed that the Zeeman-type spin splitting at the K and K' valleys of GaX and Janus Ga2XY show opposite spin contributions. We also calculated the Berry curvatures of GaX and Janus GaXY. In this study, we find that GaX and Janus Ga2XY have a similar magnitude of Berry curvatures, while having opposite signs at the K and K' points. In particular, GaTe and Ga2SeTe have relatively larger Berry curvatures of about 3.98 Å2 and 3.41 Å2, respectively, than other GaX and Janus Ga2XY.

Strain-induced topological phase transition in ferromagnetic Janus monolayer MnSbBiS2Te2

We investigate a strain-induced topological phase transition in the ferromagnetic Janus monolayer MnSbBiS2Te2 using first-principles calculations. The electronic, magnetic, and topological properties are studied under biaxial strain within the range of -8 to +8%. The ground state of monolayer MnSbBiS2Te2 is metallic with an out-of-plane magnetic easy axis. A band gap is opened when a compressive strain between -4% and -7% is applied. We observe a topological phase transition at a biaxial strain of -5%, where the material becomes a Chern insulator exhibiting a quantum anomalous hall (QAH) effect. We find that biaxial strain and spin-orbit coupling (SOC) are responsible for the topological phase transition in MnSbBiS2Te2. In addition, we find that biaxial strain can alter the direction of the magnetic easy axis of MnSbBiS2Te2. The Curie temperature is calculated using the Heisenberg model and is found to be 24 K. This study could pave the way to the design of topological materials with potential applications in spintronics, quantum computing, and dissipationless electronics.

Large valley splitting induced by spin-orbit coupling effects in monolayer W2NSCl

Two-dimensional (2D) valley materials are promising materials for writing and storing information. The search for 2D materials with large valley splitting is essential for the development of spintronics and valley electronics. In this study, we theoretically design 2D W2NSCl MXenes with large valley splitting based on first-principle calculations. Due to the strong spin-orbit coupling (SOC) and the broken inversion symmetry, the W2NSCl monolayer exhibits valley splitting values of 491 meV and 83 meV at K/K' of the valence and conduction bands, respectively. The valley splitting of W2NSCl is robust to biaxial strain. Because of the broken mirror symmetry of W2NSCl, there is a Rashba effect at Γ with a Rashba parameter of 1.019 V Å. Based on the maximum localization of the Wannier function, we found the non-zero Berry curvature at K/K'. Furthermore, the non-zero Berry curvature at the K/K' valley increases monotonically with an external strain from -4% to 4%. Our finding shows that W2NSCl is a candidate material for valley electronics and spintronics applications.

Promising TMDC-like optical and excitonic properties of the TiBr2 2H monolayer

The presented simulation protocol provides a solid foundation for exploring two-dimensional materials. Taking the TiBr2 2H monolayer as an example, this material displays promising TMDC-like optical and excitonic properties, making it an excellent candidate for optoelectronic and valleytronic applications. The direct band gap semiconductor (1.19 eV) is both structurally and thermodynamically stable, with spin-orbit coupling effects revealing a broken mirror symmetry in the K and K' valleys of the band structure, as confirmed by opposite values of the Berry curvature. A direct and bright exciton ground state was found, with an exciton binding energy of 0.56 eV. The study also revealed an optical helicity selection rule, suggesting selectivity in the valley excitation by specific circular light polarizations.

Monolayer polar metals with large piezoelectricity derived from MoSi2N4

The advancement of two-dimensional polar metals tends to be limited by the incompatibility between electric polarity and metallicity as well as dimension reduction. Here, we report polar and metallic Janus monolayers of the MoSi2N4 family by breaking the out-of-plane structural symmetry through Z (P/As) substitution of N. Despite the semiconducting nature of MoSi2X4 (X = N/P/As), four Janus MoSi2NxZ4-x monolayers are found to be polar metals owing to the weak coupling between the conducting electrons and electric polarity. The metallicity is originated from the Z substitution induced delocalization of occupied electrons in Mo-d orbitals. The out-of-plane electric polarizations around 1.5-15.7 pC m-1 are determined by the asymmetric out-of-plane charge distribution due to the non-centrosymmetric Janus structure. The corresponding out-of-plane piezoelectricity is further revealed as high as 18.7-73.3 pC m-1 and 0.05-0.25 pm V-1 for the piezoelectric strain and stress coefficients, respectively. The results demonstrate polar metallicity and high out-of-plane piezoelectricity in Janus MoSi2NxZ4-x monolayers and open new vistas for exploiting unusual coexisting properties in monolayers derived from the MoSi2N4 family.

Solar cells based on 2D Janus group-III chalcogenide van der Waals heterostructures

Janus monolayers, realized by breaking the vertical structural symmetry of two-dimensional (2D) materials, pave the way for a new era of high-quality and high-performance atomically-thin vertical p-n heterojunction solar cells. Herein, employing first-principles computations, Janus group-III chalcogenide monolayers, MX, M₂XY, MM'X₂ and MM'XY (M, M' = Ga, In; X, Y = S, Se, Te), are deeply investigated in view of their implementation in 2D photovoltaic systems. Their stability analysis reveals that the 21 investigated monolayers are energetically, thermodynamically, mechanically, dynamically, and thermally stable, confirming their growth feasibility under ambient conditions. Furthermore, owing to their optimal band gap, high charge carrier mobilities, and strong light absorption, 2D Janus group-III monolayers are predicted as promising candidates for 2D excitonic solar cell applications. In fact, 46 type-II van der Waals (vdW) heterostructures with a lattice mismatch of less than 5% are identified by analyzing the band alignments of the investigated monolayers obtained through the HSE + SOC approach. In particular, 7 vertical vdW heterojunctions with a power conversion efficiency (PCE) higher than 20% are predicted and might be the focus of future experimental and theoretical studies. To further confirm the type II band alignment, the Ga₂STe-GaInS₂ vdW heterostructure, which reveals the highest PCE of 23.69%, is thoroughly investigated. Our results not only predict and evaluate stable 2D Janus group-III chalcogenide monolayers and vdW heterostructures, but also suggest that they could be used as materials for next-generation optoelectronic and photovoltaic devices.

Pentagonal CmXnY6-m-n (m = 2, 3; n = 1, 2; X, Y = B, N, Al, Si, P) Monolayers: Janus Ternaries Combine Omnidirectional Negative Poisson Ratios with Giant Piezoelectric Effects

Two-dimensional (2D) materials composed of pentagon and Janus motifs usually exhibit unique mechanical and electronic properties. In this work, a class of ternary carbon-based 2D materials, C_mX_nY_6-m-n (m = 2, 3; n = 1, 2; X, Y = B, N, Al, Si, P), are systematically studied by first-principles calculations. Six of 21 Janus penta-C_mX_nY_6-m-n monolayers are dynamically and thermally stable. The Janus penta-C₂B₂Al₂ and Janus penta-Si₂C₂N₂ exhibit auxeticity. More strikingly, Janus penta-Si₂C₂N₂ exhibits an omnidirectional negative Poisson ratio (NPR) with values ranging from -0.13 to -0.15; in other words, it is auxetic under stretch in any direction. The calculations of piezoelectricity reveal that the out-of-plane piezoelectric strain coefficient (d₃₂) of Janus panta-C₂B₂Al₂ is up to 0.63 pm/V and increases to 1 pm/V after a strain engineering. These omnidirectional NPR, giant piezoelectric coefficients endow the Janus pentagonal ternary carbon-based monolayers as potential candidates in the future nanoelectronics, especially in the electromechanical devices.

Electronic structures and photovoltaic applications of vdW heterostructures based on Janus group-IV monochalcogenides: insights from first-principles calculations

The van der Waals integration can help 2D materials modulate their properties and provide more opportunities for 2D materials in the next-generation high-performance optoelectronic devices. Using first-principles calculations, we explored the atomic and electronic structures of 2D pristine and Janus group-IV monochalcogenides and found the internal vertical electric field at Janus group-IV monochalcogenides. Then, we constructed vdW heterostructures with pristine and Janus group-IV monochalcogenides monolayers as building blocks and explored their atomic structures and band alignments. Our results demonstrate that these vdW heterostructures can be synthesized experimentally, and the surface termination of the Janus monolayer at the interface can significantly help the heterostructure realize the transition from type I to type II due to the intrinsic electric field. Moreover, we found eight vdW heterostructures with a mismatch of less than 5% exhibiting type II band alignment with charge densities of VBM and CBM mainly localized at different domains of heterostructures, and excellent power conversion efficiency (∼19%) in photovoltaics are also predicted for these heterostructures with type II band alignment. Our results not only give an idea to use the Janus monolayer as building blocks to construct vdW heterostructures and modulate their band alignment but also provide a guide to the experimental researcher to design more efficient photovoltaic devices with Janus group-IV monochalcogenides.

A first-principles study on the electronic, piezoelectric, and optical properties and strain-dependent carrier mobility of Janus TiXY (X ≠ Y, X/Y = Cl, Br, I) monolayers

Janus transition metal dichalcogenide monolayers (TMDs) have attracted wide attention due to their unique physical and chemical properties since the successful synthesis of the MoSSe monolayer. However, the related studies of Janus monolayers of transition metal halides (TMHs) with similar structures have rarely been reported. In this article, we systematically investigate the electronic properties, piezoelectric properties, optical properties, and carrier mobility of new Janus TiXY (X ≠ Y, X/Y = Cl, Br, I) monolayers using first principles calculations for the first time. These Janus TiXY monolayers are thermally, dynamically, and mechanically stable, and their energy bands near the Fermi level (E_F) are almost entirely contributed by the central Ti atom. Besides, the Janus TiXY monolayers exhibit excellent in-plane and out-of-plane piezoelectric effects, especially with an in-plane piezoelectric coefficient of ∼4.58 pm V^-1 for the TiBrI monolayer and an out-of-plane piezoelectric coefficient of ∼1.63 pm V^-1 for the TiClI monolayer, suggesting their promising applications in piezoelectric sensors and energy storage applications. The absorption spectra of Janus TiXY monolayers are mainly distributed in the visible and infrared regions, implying that they are fantastic candidates for photoelectric and photovoltaic applications. The obtained carrier mobilities revealed that TiXY monolayers are hole-type semiconductors. Under uniaxial compressive strain, the hole mobilities of these monolayers are gradually improved, indicating that TiXY monolayers have potential applications in the field of flexible electronic devices.

Intrinsic spin, valley and piezoelectric polarizations in room-temperature ferrovalley Janus TiXY (XY = SCl and SeBr) monolayers

Two-dimensional room-temperature Janus ferrovalley semiconductors with large spin, valley and piezoelectric polarizations provide fertile platforms for designing multifunctional nanodevices. Little research has been reported to date on such materials. Here, using first-principles calculations, we predict two dynamically stable Janus titanium chalcohalide (TiSCl and TiSeBr) monolayers, which are excellent piezoelectric ferrovalley semiconductors with in-plane magnetization and high magnetic transition temperatures (738 and 884 K). When an extrinsic magnetic field is used to force the magnetization along the out-of-plane direction, a large valley polarization (64 and 146 meV) can be generated in the highest valence band with a large spin-orbit coupling by the breaking of time-reversal and space-inversion symmetry, which can be further clarified by a two-band k·p model. This robust valley-contrasting physics characterized by the valley-dependent Berry curvature leads to the anomalous valley Hall effect. It can be observed by suitable hole doping or light irradiation under an in-plane electric field. Besides, we find that the missing mirror symmetry results in giant out-of-plane piezoelectric polarization (2.05 and 2.04 pm V^-1). These outstanding properties give the Janus TiSCl and TiSeBr monolayers potential for a wide variety of applications in nanoelectronics, spintronics, valleytronics, piezoelectrics and other demanding areas.

Intrinsic Valley Splitting and Direct-to-Indirect Band Gap Transition in Monolayer HfZrSiCO2

Both a reasonably large valley splitting (VS) and a sufficiently long valley exciton lifetime are crucial in valleytronics device applications. Currently, no single system possesses both attributes simultaneously. Herein, we demonstrate that a Janus monolayer HfZrSiCO2 concurrently hosts a giant intrinsic VS and excitonic quasi-particles with long valley lifetime due to valley-sublayer coupling and built-in electric field. In addition, the band structure of the monolayer HfZrSiCO2 can be continuously manipulated by either an external electric field or a biaxial strain, giving rise to a tunable VS and driving a direct-to-indirect band gap transition. Moreover, the system exhibits valley-contrasting linear dichroism in exciton absorption. These results suggest that the Janus monolayer HfZrSiCO2 is a promising candidate for information applications.

Morphotaxy of Layered van der Waals Materials

Layered van der Waals (vdW) materials have attracted significant attention due to their materials properties that can enhance diverse applications including next-generation computing, biomedical devices, and energy conversion and storage technologies. This class of materials is typically studied in the two-dimensional (2D) limit by growing them directly on bulk substrates or exfoliating them from parent layered crystals to obtain single or few layers that preserve the original bonding. However, these vdW materials can also function as a platform for obtaining additional phases of matter at the nanoscale. Here, we introduce and review a synthesis paradigm, morphotaxy, where low-dimensional materials are realized by using the shape of an initial nanoscale precursor to template growth or chemical conversion. Using morphotaxy, diverse non-vdW materials such as HfO₂ or InF₃ can be synthesized in ultrathin form by changing the composition but preserving the shape of the original 2D layered material. Morphotaxy can also enable diverse atomically precise heterojunctions and other exotic structures such as Janus materials. Using this morphotaxial approach, the family of low-dimensional materials can be substantially expanded, thus creating vast possibilities for future fundamental studies and applied technologies.

A density functional theory study on the strain modulated electronic and photocatalytic properties of a GaSe monolayer for photocatalytic water splitting and artificial photosynthesis

The strain modulated electronic and photocatalytic properties of GaSe monolayer for photocatalytic water splitting and artificial photosynthesis using DFT study.

Janus monolayer HfSO with improved optical properties as a novel material for photovoltaic and photocatalyst applications

First principles calculations were performed to investigate the photocatalytic behavior of 2D Janus monolayer HfSO at equilibrium and under the influence of strains and external electric fields.

Large valley polarization in a novel two-dimensional semiconductor H-ZrX2(XCl, Br, I)

Inspired by the new progress in the research field of two-dimensional valleytronics materials, we propose a new class of transition metal halides, i.e. H-ZrX₂(X = Cl, Br, I), and investigated their valleytronics properties under the first-principles calculations. It harbors the spin-valley coupling at K and K' points in the top of valence band, in which the valley spin splitting of ZrI₂can reach up to 115 meV. By carrying out the strain engineering, the valley spin splitting and Berry curvature can be effectively tuned. The long-sought valley polarization reaches up to 108 meV by doping Cr atom, which corresponds to the large Zeeman magnetic field of 778 T. Furthermore, the valley polarization in ZrX₂can be lineally adjusted or flipped by manipulating the magnetization orientation of the doped magnetic atoms. All the results demonstrate the well-founded application prospects of single-layer ZrX₂, which can be considered as great candidate for the development of valleytronics and spintronics.

Two-Dimensional Janus Antimony Selenium Telluride with Large Rashba Spin Splitting and High Electron Mobility

Janus two-dimensional materials with large Rashba spin splitting and high electron mobility are rarely reported but highly desired for nanoscale spintronics. Herein, using density functional theory calculations, we predicated Janus Sb2Se x Te3-x (x = 1 or 2) monolayers simultaneously harboring these fascinating properties. The predicated monolayers are indirect semiconductors with great dynamical, thermal, and mechanical stability. The spin-orbital coupling (SOC) and the out-of-plane asymmetry lead to Rashba spin splitting at the conduction band minimum (CBM), which can be effectively tuned by the small uniaxial strain. The strong band dispersion at the CBM leads to small electron effective mass, consequently enabling a high electron mobility that reaches up to 6816.63 cm2 V-1 s-1. Moreover, Janus Sb2Se x Te3-x monolayers possess great light absorption capability within the visible and infrared regions of solar light. Our findings highlight promising candidates for high-speed spintronic devices and may motivate more research efforts on carrier transport and SOC effects in Janus group V and VI monolayers.

Rational Design of a Two-Dimensional Janus CuFeO2+δ Single Layer as a Photocatalyst and Photoelectrode

The exfoliation of 2D nanomaterials from 3D multimetal oxides with a stable structure is a great challenge. Herein, a delafossite CuFeO_2+δ nanosheet becomes an open-layered structure by introducing excess oxygen so that the 2D Janus CuFeO_2+δ single layer can be further obtained by aqueous ultrasonic exfoliation. The 2D Janus CuFeO_2+δ single layer breaks the limitation of mirror symmetry, which is very beneficial to the effective separation of photogenerated electron-hole pairs. Serving as both a photoelectrode and a photocatalyst, the 2D Janus CuFeO_2+δ single layer/few layer remarkably enhances the photocatalytic activity with long-term stability: the photocurrent density is increased by 2-fold, and the rate of H₂ evolution is increased by 1.5-fold, in comparison with the counterpart of unexfoliated CuFeO_2+δ nanosheets. This work demonstrates that 2D nanomaterials can be directly exfoliated from 3D nanomaterials by rational composition and microstructure design, which is helpful in promoting the development of bimetallic-oxide-ene (BMOene) as a novel functional material.

Room temperature spontaneous valley polarization in two-dimensional FeClBr monolayer

The valley degrees of freedom of Bloch electrons provide a proper platform to realize information storage and processing. Using first principles calculations, we propose that the FeClBr monolayer is a ferromagnetic semiconductor with spontaneous valley polarization owing to the combined effect of magnetic exchange interaction and spin-orbit coupling effect. The FeClBr monolayer shows perpendicular magnetic anisotropy, a high Curie temperature of 651 K and a large valley splitting of 188 meV, which are beneficial for the practical applications in valleytronics. Then, the anomalous valley Hall effect can be realized under an in-plane electrical field due to the valley-contrasting berry curvature. According to the optical selectivity rule, the different valleys at K and K^- points in momentum space can be excited by the circularly polarized light in honeycomb structures; however, the FeClBr monolayer can also respond to the linear light. Therefore, the valley degree of freedom of the FeClBr monolayer can be modulated by circularly polarized light, linear light and hole doping. Our work enriches the library of valley materials and provides a candidate for the study of spintronics and valleytronics field.

Unconventional distortion induced two-dimensional multiferroicity in a CrO3 monolayer

Two-dimensional (2D) multiferroic materials with the coexistence of electric and spin polarization offer a tantalizing potential for high-density multistate data storage. However, intrinsic 2D multiferroic semiconductors with high thermal stability are still rare to date. Here, we propose a new mechanism of single-phase multiferroicity. Based on first-principles calculations, we predicted that in a CrO₃ monolayer, the unconventional distortion of the square antiprismatic crystal field on Cr-d orbitals will induce an in-plane electric polarization, making this material a single-phase multiferroic semiconductor. Importantly, the magnetic Curie temperature is estimated to be ∼220 K, which is quite high as compared to those of the recently reported 2D ferromagnetic and multiferroic semiconductors. Moreover, both ferroelectric and antiferroelectric phases are observed, providing opportunities for electrical control of magnetism and energy storage and conversion applications. These findings provide a comprehensive understanding of the magnetic and electric behavior in 2D multiferroics and will motivate further research on the application of related 2D electromagnetics and spintronics.

Electronic Properties of Monolayer and van der Waals Bilayer of Janus TiClI

In this work, the novel electronic properties of the Janus TiClI monolayer (ML) and van der Waals (vdW) bilayers (BLs) have been demonstrated. As a result of the strong spin-orbit coupling (SOC) together with the inversion symmetry breaking, the TiClI ML shows valley spin splitting of 62.67 meV at the K/K' point. In magnetic V- and Cr-doped TiClI MLs, sizable valley polarization of 36.70 and 45.35 meV occurs, respectively. TiClI vdW BLs indicate typical type-II band alignment with a quite large band offset (>500 meV), and interestingly, the interlayer-polarization P_H is almost 100% for all considered stacking orders. In addition, the interlayer-polarization is insensitive to the interlayer distance. In this situation, the interlayer exciton and valley polarization lifetimes could be prolonged, and thus, TiClI vdW BLs provide new opportunities for light-energy conversion and valleytronics. As the interlayer distance decreases, the TiClI BLs of AB' and AB stacking indicate a semiconductor-to-metal transition and are characterized by hole-doping, and the doping concentration can be further tuned by changing the interlayer distance.

Exploring the electronic band gap of Janus MoSeO and WSeO monolayers and their heterostructures

Electronic band structure of TMSeO monolayers.

Strain Effects of Vertical Separation and Horizontal Sliding in Commensurate Two-Dimensional Homojunctions

Strain, as an economic yet controllable approach for structural modulation, frequently plays a vital role in the preparation and performance optimization of two-dimensional nanomaterials (TNMs). Here, utilizing first-principles simulations, the analysis of energetics shows that the biaxial stretching and compressing could facilitate the vertical separation and horizontal sliding in graphene (Gr/Gr), hexagonal boron nitride (h-BN/h-BN), and molybdenum disulfide (MoS₂/MoS₂) bilayers. The quantification of electron redistribution between layers confirmed that the shifts of interlayer charge density (ρ_inter-) and its relative values (Δρ_inter-) are responsible for the vertical separation and horizontal sliding facilitated by biaxial strain. More effortless horizontal sliding was enabled by a smoother potential energy surface because a smaller Δρ_inter- can be acquired under compression, whereas more effortless vertical separation followed a more vulnerable surface energy because a lower ρ_inter- occurs under tensile strain. The vertical and horizontal division of strain effect provides a novel idea for further understanding its pivotal roles in strain engineering of commensurate-contact TNMs, such as mechanical exfoliation and solid lubrication.

Ferroelectric Rashba semiconductors, AgBiP2X6 (X = S, Se and Te), with valley polarization: an avenue towards electric and nonvolatile control of spintronic devices

The electric and nonvolatile control of spin in semiconductors represents a fundamental step towards novel electronic devices. In this work, using first-principles calculations we investigate the electronic properties of AgBiP2X6 (X = S, Se, and Te) monolayers, which may be a new member of ferroelectric Rashba semiconductors due to the inversion symmetry breaking arising from the ferroelectric polarization, thus allowing for the electric control of spin. The AgBiP2X6 monolayers are dynamically and thermodynamically stable up to room temperature. In the AgBiP2Te6 monolayer, the calculated band structure reveals the direct band-gap semiconducting nature in the presence of highly mobile two-dimensional electron gas near the Fermi level. The inclusion of spin-orbit coupling yields the giant Rashba-type spin splitting with a Rashba parameter of 6.5 eV Å, which is even comparable to that of some known bulk Rashba semiconductors. Except for the Rashba-type spin splitting, spin-orbit coupling together with inversion symmetry breaking also gives rise to valley polarization located at the edge of the conduction bands. The strength of the Rashba-type spin splitting and location of the conduction band minimum can be significantly tuned by applying the in-plane biaxial strain. Also, we demonstrate that these remarkable features can be retained in the presence of the BN substrate. The coexistence of the Rashba-type spin splitting (in-plane spin direction) and band splitting at the K/K' valleys (out-of-plane spin direction) makes the AgBiP2Te6 monolayer interesting for spintronics and valleytronics.