In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS2 and WSe2 for High-k Integration: A First-Principles Study

Beyond the Charge Transfer Mechanism for 2D Materials-Assisted Surface Enhanced Raman Scattering

Two-dimensional (2D) materials have been extensively implemented as surface-enhanced Raman scattering (SERS) substrates, enabling trace-molecule detection for broad applications. However, the accurate understanding of the mechanism remains elusive because most theoretical explanations are still phenomenological or qualitative based on simplified models and rough assumptions. To advance the development of 2D material-assisted SERS, it is vital to attain a comprehensive understanding of the enhancement mechanism and a quantitative assessment of the enhancement performance. Here, the microscopic chemical mechanism of 2D material-assisted SERS is quantitatively investigated. The frequency-dependent Raman scattering cross sections suggest that the 2D materials' SERS performance is strongly dependent on the excitation wavelengths and the molecule types. By analysis of the microscopic Raman scattering processes, the comprehensive contributions of SERS can be revealed. Beyond the widely postulated charge transfer mechanisms, the quantitative results conclusively demonstrate that the resonant transitions within 2D materials alone are also capable of enhancing the molecular Raman scattering through the diffusive scattering of phonons. Furthermore, all of these scattering routines will interfere with each other and determine the final SERS performance. Our results not only provide a complete picture of the SERS mechanisms but also demonstrate a systematic and quantitative approach to theoretically understand, predict, and promote the 2D materials SERS toward analytical applications.

Self-Powered and Broadband Photodetectors Based on High-performance Mixed Dimensional Sb2O3/PdTe2/Si Heterojunction for Multiplex Environmental Monitoring

Solar-blind ultraviolet (SBUV) to near-infrared (NIR) broadband photodetectors (BB-PD) have important applications in environmental monitoring and other applications. However, it is challenging to prepare SBUV-IR photosensitive materials via simple steps and to construct SBUV-IR broadband devices for multiplex detection with high sensitivity at different wavelengths. Here, self-powered and broadband photodetectors using a high-performance mixed dimensional Sb2O3 nanorod 1-dimension (1D)/monodisperse microdiamond-like PdTe2 3-dimension (3D)/Si (3D) heterojunction for multiplex detection of environmental pollutants with high sensitivity at broadband wavelength are developed. The 1D/3D mixed dimensional Sb2O3/PdTe2/Si structure combines the advantages of strong light absorption, high carrier transport efficiency of 1D Sb2O3 nanorods, and expansion of interface barrier caused by 3D microdiamond-like PdTe2 interlayer to improve the photocurrent density and self-powered ability. The efficient photogenerated charge separation enables anon/off ratio of more than 5 × 106. The device exhibits excellent photoelectric properties from 255 to 980 nm with the responsivity from 4.56 × 10-2 to 6.55 × 10-1 AW-1, the detectivity from 2.36 × 1012 to 3.39 × 1013 Jones, and the sensitivity from 3.90 × 107 to 1.10 × 1010 cm2 W-1 without external bias. Finally, the proposed device is applied for the multiplex monitoring of environmental pollution gases NO2 with the detection limit of 200 ppb and PM2.5 particles at mild pollution at broadband wavelength. The proposed BB-PD has great potential for multiplex detection of environmental pollutants and other analytes at broadband wavelength.

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

Two-dimensional transition metal dichalcogenides (TMDs) offer fascinating opportunities for fundamental nanoscale science and various technological applications. They are a promising platform for next generation optoelectronics and energy harvesting devices due to their exceptional characteristics at the nanoscale, such as tunable bandgap and strong light-matter interactions. The performance of TMD-based devices is mainly governed by the structure, composition, size, defects, and the state of their interfaces. Many properties of TMDs are influenced by the method of synthesis so numerous studies have focused on processing high-quality TMDs with controlled physicochemical properties. Plasma-based methods are cost-effective, well controllable, and scalable techniques that have recently attracted researchers' interest in the synthesis and modification of 2D TMDs. TMDs' reactivity toward plasma offers numerous opportunities to modify the surface of TMDs, including functionalization, defect engineering, doping, oxidation, phase engineering, etching, healing, morphological changes, and altering the surface energy. Here we comprehensively review all roles of plasma in the realm of TMDs. The fundamental science behind plasma processing and modification of TMDs and their applications in different fields are presented and discussed. Future perspectives and challenges are highlighted to demonstrate the prominence of TMDs and the importance of surface engineering in next-generation optoelectronic applications.

Two-Dimensional Nanoarchitectonics for Two-Dimensional Materials: Interfacial Engineering of Transition-Metal Dichalcogenides

Transition-metal dichalcogenides (TMDs) have attracted increasing attention in fundamental studies and technological applications owing to their atomically thin thickness, expanded interlayer distance, motif band gap, and phase-transition ability. Even though TMDs have a wide variety of material assets from semiconductor to semimetallic to metallic, the materials with fixed features may not show excellence for precise application. As a result of exclusive crystalline polymorphs, physical and chemical assets of TMDs can be efficiently modified via various approaches of interface nanoarchitectonics, including heteroatom doping, heterostructure, phase engineering, reducing size, alloying, and hybridization. With modified properties, TMDs become interesting materials in diverse fields, including catalysis, energy, electronics, transistors, and optoelectronics.

One-Step Passivation of Both Sulfur Vacancies and SiO2 Interface Traps of MoS2 Device

Transition metal dichalcogenides (TMDs) benefit electrical devices with spin-orbit coupling and valley- and topology-related properties. However, TMD-based devices suffer from traps arising from defect sites inside the channel and the gate oxide interface. Deactivating them requires independent treatments, because the origins are dissimilar. This study introduces a single treatment to passivate defects in a multilayer MoS2 FET. By applying back-gate bias, protons from an H-TFSI droplet are injected into the MoS2, penetrating deeply enough to reach the SiO2 gate oxide. The characterizations employing low-temperature transport and deep-level transient spectroscopy (DLTS) studies reveal that the trap density of S vacancies in MoS2 drops to the lowest detection level. The temperature-dependent mobility plot on the SiO2 substrate resembles that of the h-BN substrate, implying that dangling bonds in SiO2 are passivated. The carrier mobility on the SiO2 substrate is enhanced by approximately 2200% after the injection.

Covalently Modified MoS2 Bearing a Hamilton-Type Receptor for Recognizing a Redox-Active Ferrocene-Barbiturate Guest via Multiple H-Bonds

The covalent modification of the metallic phase of MoS2 with a Hamilton-type ligand is presented, transforming MoS2 to a recognition platform which is able to embrace barbiturate moieties via hydrogen bonding. The successful hydrogen bonding formation is easily monitored by simple electrochemical assessments, if a ferrocene-labeled barbiturate analogue is utilized as a proof of concept. Full spectroscopic, thermal, and electron microscopy imaging characterization is provided for the newly formed recognition system, along with valuable insights concerning the electrochemical sensing. The given methodology expands beyond the sensing applications, confidently entering the territory of supramolecular interactions on the surface of 2D transition metal dichalcogenides. The well-designed host-guest chemistry presented herein, constitutes a guide and an inspiration for hosting customized-structured functional building blocks on MoS2 and its relatives via hydrogen bonding, opening up new opportunities regarding potential applications.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 10⁵. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W^-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.

Mechanistic insight into the chemical treatments of monolayer transition metal disulfides for photoluminescence enhancement

There is a growing interest in obtaining high quality monolayer transition metal disulfides for optoelectronic applications. Surface treatments using a range of chemicals have proven effective to improve the photoluminescence yield of these materials. However, the underlying mechanism for the photoluminescence enhancement is not clear, which prevents a rational design of passivation strategies. Here, a simple and effective approach to significantly enhance the photoluminescence is demonstrated by using a family of cation donors, which we show to be much more effective than commonly used p-dopants. We develop a detailed mechanistic picture for the action of these cation donors and demonstrate that one of them, bis(trifluoromethane)sulfonimide lithium salt (Li-TFSI), enhances the photoluminescence of both MoS2 and WS2 to a level double that of the currently best performing super-acid trifluoromethanesulfonimide (H-TFSI) treatment. In addition, the ionic salts used in our treatments are compatible with greener solvents and are easier to handle than super-acids, providing the possibility of performing treatments during device fabrication. This work sets up rational selection rules for ionic chemicals to passivate transition metal disulfides and increases their potential in practical optoelectronic applications.

Covalent Patterning of 2D MoS2

The development of an efficient method to patterning 2D MoS₂ into a desired topographic structure is of particular importance to bridge the way towards the ultimate device. Herein, we demonstrate a patterning strategy by combining the electron beam lithography with the surface covalent functionalization. This strategy allows us to generate delicate MoS₂ ribbon patterns with a minimum feature size of 2 μm in a high throughput rate. The patterned monolayer MoS₂ domain consists of a spatially well‐defined heterophase homojunction and alternately distributed surface characteristics, which holds great interest for further exploration of MoS₂ based devices.

An ion-selective crown ether covalently grafted onto chemically exfoliated MoS2 as a biological fluid sensor

We describe the basal plane functionalization of chemically exfoliated molybdenum disulfide (ce-MoS2) nanosheets with a benzo-15-crown-5 ether (B15C5), promoted by the chemistry of diazonium salts en route to the fabrication and electrochemical assessment of an ion-responsive electrode. The success of the chemical modification of ce-MoS2 nanosheets was investigated by infrared and Raman spectroscopy, and the amount of the incorporated crown ether was estimated by thermogravimetric analysis. Raman spatial mapping at on-resonance excitation allowed us to disclose the structural characteristics of the functionalized B15C5-MoS2 nanosheets and the impact of basal plane functionalization to the stabilization of the 1T phase of ce-MoS2. Morphological investigation of the B15C5-MoS2 hybrid was implemented by atomic force microscopy and high-resolution transmission electron microscopy. Furthermore, fast-Fourier-transform analysis and in situ energy dispersive X-ray spectroscopy revealed the crystal lattice of the modified nanosheets and the presence of crown-ether addends, respectively. Finally, B15C5-MoS2 electrodes were constructed and evaluated as ion-selective electrodes for sodium ions in aqueous solution and an artificial sweat matrix.

High mobility field-effect transistors based on MoS2crystals grown by the flux method

Two-dimensional (2D) molybdenum disulphide (MoS₂) transition metal dichalcogenides (TMDs) have great potential for use in optical and electronic device applications; however, the performance of MoS₂is limited by its crystal quality, which serves as a measure of the defects and grain boundaries in the grown material. Therefore, the high-quality growth of MoS₂crystals continues to be a critical issue. In this context, we propose the formation of high-quality MoS₂crystals via the flux method. The resulting electrical properties demonstrate the significant impact of crystal morphology on the performance of MoS₂field-effect transistors. MoS₂made with a relatively higher concentration of sulphur (a molar ratio of 2.2) and at a cooling rate of 2.5 °C h^-1yielded good quality and optimally sized crystals. The room-temperature and low-temperature (77 K) electrical transport properties of MoS₂field-effect transistors (FETs) were studied in detail, with and without the use of a hexagonal boron nitride (h-BN) dielectric to address the mobility degradation issue due to scattering at the SiO₂/2D material interface. A maximum field-effect mobility of 113 cm²V^-1s^-1was achieved at 77 K for the MoS₂/h-BN FET following high-quality crystal formation by the flux method. Our results confirm the achievement of large-scale high-quality crystal growth with reduced defect density using the flux method and are key to achieving higher mobility in MoS₂FET devices in parallel with commercially accessible MoS₂crystals.

Covalent Bisfunctionalization of Two-Dimensional Molybdenum Disulfide

Covalent functionalization of two‐dimensional molybdenum disulfide (2D MoS₂) holds great promise in developing robust organic‐MoS₂ hybrid structures. Herein, for the first time, we demonstrate an approach to building up a bisfunctionalized MoS₂ hybrid structure through successively reacting activated MoS₂ with alkyl iodide and aryl diazonium salts. This approach can be utilized to modify both colloidal and substrate supported MoS₂ nanosheets. We have discovered that compared to the adducts formed through the reactions of MoS₂ with diazonium salts, those formed through the reactions of MoS₂ with alkyl iodides display higher reactivity towards further reactions with electrophiles. We are convinced that our systematic study on the formation and reactivity of covalently functionalized MoS₂ hybrids will provide some practical guidance on multi‐angle tailoring of the properties of 2D MoS₂ for various potential applications.

Scalable Substitutional Re-Doping and its Impact on the Optical and Electronic Properties of Tungsten Diselenide

Reliable, controlled doping of 2D transition metal dichalcogenides will enable the realization of next-generation electronic, logic-memory, and magnetic devices based on these materials. However, to date, accurate control over dopant concentration and scalability of the process remains a challenge. Here, a systematic study of scalable in situ doping of fully coalesced 2D WSe₂ films with Re atoms via metal-organic chemical vapor deposition is reported. Dopant concentrations are uniformly distributed over the substrate surface, with precisely controlled concentrations down to <0.001% Re achieved by tuning the precursor partial pressure. Moreover, the impact of doping on morphological, chemical, optical, and electronic properties of WSe₂ is elucidated with detailed experimental and theoretical examinations, confirming that the substitutional doping of Re at the W site leads to n-type behavior of WSe₂ . Transport characteristics of fabricated back-gated field-effect-transistors are directly correlated to the dopant concentration, with degrading device performances for doping concentrations exceeding 1% of Re. The study demonstrates a viable approach to introducing true dopant-level impurities with high precision, which can be scaled up to batch production for applications beyond digital electronics.

Theoretical study on the photocatalytic properties of 2D InX(X = S, Se)/transition metal disulfide (MoS2 and WS2) van der Waals heterostructures

Harvesting solar energy for artificial photosynthesis is an emerging field in alternative energy research. In this work, the photocatalytic properties of InX(X = S, Se)/transition metal disulfide (MoS₂ and WS₂) van der Waals heterostructures have been investigated. The calculation results indicate that these heterostructures exhibit improved photocatalytic performance over that of isolated InX or transition metal disulfide monolayers. The studied heterostructures all have type-II band alignment with holes and electrons located at the TMD and InX side, respectively. This facilitates the spatial separation of photogenerated carriers and improves the photocatalytic efficiency. The carrier mobility of the designed heterostructures can be boosted compared with the isolated monolayers, thus enhancing the carrier transport properties. Moreover, the strain-tuned heterostructures can prominently manipulate the light-harvesting capability especially from the visible light to infrared light range. Among the studied heterostructures, InSe/MoS₂ with the suitable band edge positions, excellent transport properties and strain tolerance, and the lowest overpotential for oxygen evolution, stands out as the most promising candidate for photocatalytic applications. This work opens an avenue for the design of highly efficient heterostructure photocatalysts for solar-to-energy applications.

The External Electric Field-Induced Tunability of the Schottky Barrier Height in Graphene/AlN Interface: A Study by First-Principles

Graphene-based van der Waals (vdW) heterojunction plays an important role in next-generation optoelectronics, nanoelectronics, and spintronics devices. The tunability of the Schottky barrier height (SBH) is beneficial for improving device performance, especially for the contact resistance. Herein, we investigated the electronic structure and interfacial characteristics of the graphene/AlN interface based on density functional theory. The results show that the intrinsic electronic properties of graphene changed slightly after contact. In contrast, the valence band maximum of AlN changed significantly due to the hybridization of Cp and Np orbital electrons. The Bader charge analysis showed that the electrons would transfer from AlN to graphene, implying that graphene would induce acceptor states. Additionally, the Schottky contact nature can be effectively tuned by the external electric field, and it will be tuned from the p-type into n-type once the electric field is larger than about 0.5 V/Å. Furthermore, the optical absorption of graphene/AlN is enhanced after contact. Our findings imply that the SBH is controllable, which is highly desirable in nano-electronic devices.

Controlling the Structural, Mechanical and Frictional Properties of MoSx Coatings by High-Power Impulse Magnetron Sputtering

Tribology, as the science and technology of interacting surfaces, typically relies on liquid lubricants which reduce friction and wear. For environmentally friendly tribological purposes and applications requiring a liquid-free performance, solid lubricants, such as MoS2 coatings, play an essential role. It is crucial to understand the interplay between the parameters of the coating synthesis and the characteristics of the coating. The impact of the deposition parameters on the structural, mechanical and frictional properties of MoSx thin films, which are synthesized by high-power impulse magnetron sputtering, are studied. The morphology, topography and stoichiometry (2.02 < x < 2.22) of the films are controlled by, in particular, the bias-voltage and heating power applied during the sputtering process. In combination with a low pulse frequency the hardness and elastic stiffness of the MoSx films are enhanced up to 2 and 90 GPa, respectively. This enhancement is assigned to a shortening of the Mo-S bonding lengths and a strengthening in the interatomic coupling as well as to a formation of small-sized crystallites at the surface. The friction coefficient reduces to µ = 0.10 for films with an initial (100) orientation and the mean roughness of the MoSx films decreases below 15 nm by shortening the cathode pulses.

Defect Engineering of Two-Dimensional Molybdenum Disulfide

Two‐dimensional (2D) molybdenum disulfide (MoS₂) holds great promise in electronic and optoelectronic applications owing to its unique structure and intriguing properties. The intrinsic defects such as sulfur vacancies (SVs) of MoS₂ nanosheets are found to be detrimental to the device efficiency. To mitigate this problem, functionalization of 2D MoS₂ using thiols has emerged as one of the key strategies for engineering defects. Herein, we demonstrate an approach to controllably engineer the SVs of chemically exfoliated MoS₂ nanosheets using a series of substituted thiophenols in solution. The degree of functionalization can be tuned by varying the electron‐withdrawing strength of substituents in thiophenols. We find that the intensity of 2LA(M) peak normalized to A_1g peak strongly correlates to the degree of functionalization. Our results provide a spectroscopic indicator to monitor and quantify the defect engineering process. This method of MoS₂ defect functionalization in solution also benefits the further exploration of defect‐free MoS₂ for a wide range of applications.

Structural engineering of bilayer PtSe2 thin films: a first-principles study

PtSe₂ is an emerging layered two-dimensional material of applied interest. Its monolayer shows promising properties for applications in electronic devices, while the bandgap of a multilayer PtSe₂ film can be tuned via changing its thickness. In this work the bilayer PtSe₂ thin films are investigated as an example of structural engineering with first-principles calculations. Various van der Waals corrections schemes are firstly discussed, and the optB86b scheme shows a better description of the semiconductor-metal transition for PtSe₂ films. Six bilayer PtSe₂ thin films in different stacking modes are constructed in order to structurally tune the electronic and transport properties. The bandgap can be effectively broadened with the structural engineering for wider potential applications. The carrier mobility, dynamical stability and Raman spectra are also calculated and discussed.

Investigation of the Tribofilm Formation of HiPIMS Sputtered MoSx Thin Films in Different Environments by Raman Scattering

Understanding the generation of third body particles and their contribution to the formation of tribofilms of MoSx thin films is still challenging due to a large number of influencing factors. Besides the structure of the as-deposited MoSx films, the environment and the conditions during the Ball-on-disk tests affect tribofilms and thus the friction. Therefore, the influence of the surface pressure and sliding velocity in air, argon and nitrogen environments on the generation of the third body particles and the tribofilm formation of randomly oriented MoSx films is investigated. A high surface pressure is one major factor to achieve low friction, especially under humid conditions, which is important considering the use in industrial applications, for example dry-running screw machines. However, the mechanisms leading to that frictional behavior are still affected by the surrounding environment. While low friction is caused by a more extensive tribofilm formation in air, in argon and nitrogen, large size third body particles dispensed all over the contact area contribute to a lower friction. Raman scattering reveal a different chemistry of these particles reflected in the absence of laser- or temperature-induced surface oxidation compared to the as-deposited film and the wear track. The Raman scattering results are discussed with respect to the wear particle size, its chemical reactivity and strain-induced bonding changes.