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Islam MS, Chowdhury RK, Barthelemy M, Moczko L, Hebraud P, Berciaud S, Barsella A, Fras F. Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flake Morphology. ACS NANO 2024. [PMID: 39083640 DOI: 10.1021/acsnano.3c10403] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/02/2024]
Abstract
Quantum emitters in two-dimensional layered hexagonal boron nitride are quickly emerging as a highly promising platform for next-generation quantum technologies. However, the precise identification and control of defects are key parameters to achieve the next step in their development. We conducted a comprehensive study by analyzing over 10,000 photoluminescence emission lines from liquid exfoliated hBN nanoflake samples, revealing 11 narrow sets of defect families within the 1.6 to 2.2 eV energy range. This challenges hypotheses of a random energy distribution. We also reported averaged defect parameters, including emission line widths, spatial density, phonon side bands, and Franck-Condon-related factors. These findings provide valuable insights into deciphering the microscopic origin of emitters in hBN hosts. We also explored the influence of the hBN host morphology on defect family formation, demonstrating its crucial impact. By tuning the flake size and arrangement, we achieve selective control of defect types while maintaining high spatial density. This offers a scalable approach to defect emission control, diverging from costly engineering methods. It emphasizes the significance of the morphological aspects of hBN hosts for gaining insights into defect origins and expanding their spectral control.
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Affiliation(s)
- Md Samiul Islam
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Rup Kumar Chowdhury
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Marie Barthelemy
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Loic Moczko
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Pascal Hebraud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Stephane Berciaud
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Alberto Barsella
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
| | - Francois Fras
- Institut de Physique et Chimie des Matériaux de Strasbourg, Université de Strasbourg, CNRS, UMR 7504, F-67000 Strasbourg, France
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2
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Singla S, Joshi P, López-Morales GI, Sarkar S, Sarkar S, Flick J, Chakraborty B. Probing Correlation of Optical Emission and Defect Sites in Hexagonal Boron Nitride by High-Resolution STEM-EELS. NANO LETTERS 2024. [PMID: 38888554 DOI: 10.1021/acs.nanolett.4c01477] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/20/2024]
Abstract
Optically bright emitters in hexagonal boron nitride (hBN) often acting as a source of a single-photon are mostly attributed to point-defect centers, featuring localized intra-bandgap electronic states. Although vacancies, anti-sites, and impurities have been proposed as candidates, the exact physical and chemical nature of most hBN single-photon emitters (SPEs) within the visible region are still up for debate. Combining site-specific high-angle annular dark-field imaging (HAADF) with electron energy loss spectroscopy (EELS), we resolve and identify a few carbon substitutions among neighboring hBN hexagons, all within the same sample region, from which typical defect emission is observed. Our experimental results are further supported by first-principles calculations, through which the stability and possible optical transitions of the proposed carbon-defect complex are assessed. The presented correlation between optical emission and defects provides valuable information toward the controlled creation of emitters in hBN, highlighting carbon complexes as another probable cause of its visible SPEs.
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Affiliation(s)
- Sakal Singla
- Department of Physics, Indian Institute of Technology Jammu, Jammu 181221, India
| | - Pragya Joshi
- Department of Physics, Indian Institute of Technology Jammu, Jammu 181221, India
| | | | - Suman Sarkar
- Central Instrumental Facility, Indian Institute of Technology Jammu, Jammu 181221, India
| | - Suman Sarkar
- Department of Materials Engineering, Indian Institute of Technology Jammu, Jammu 181221, India
| | - Johannes Flick
- Department of Physics, The Graduate Center, City University of New York, New York, New York 10016, United States
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
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3
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Pelliciari J, Mejia E, Woods JM, Gu Y, Li J, Chand SB, Fan S, Watanabe K, Taniguchi T, Bisogni V, Grosso G. Elementary excitations of single-photon emitters in hexagonal boron nitride. NATURE MATERIALS 2024:10.1038/s41563-024-01866-4. [PMID: 38654140 DOI: 10.1038/s41563-024-01866-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/13/2022] [Accepted: 03/15/2024] [Indexed: 04/25/2024]
Abstract
Single-photon emitters serve as building blocks for many emerging concepts in quantum photonics. The recent identification of bright, tunable and stable emitters in hexagonal boron nitride (hBN) has opened the door to quantum platforms operating across the infrared to ultraviolet spectrum. Although it is widely acknowledged that defects are responsible for single-photon emitters in hBN, crucial details regarding their origin, electronic levels and orbital involvement remain unknown. Here we employ a combination of resonant inelastic X-ray scattering and photoluminescence spectroscopy in defective hBN, unveiling an elementary excitation at 285 meV that gives rise to a plethora of harmonics correlated with single-photon emitters. We discuss the importance of N π* anti-bonding orbitals in shaping the electronic states of the emitters. The discovery of elementary excitations in hBN provides fundamental insights into quantum emission in low-dimensional materials, paving the way for future investigations in other platforms.
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Affiliation(s)
- Jonathan Pelliciari
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA.
| | - Enrique Mejia
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA
| | - John M Woods
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA
| | - Yanhong Gu
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Jiemin Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Saroj B Chand
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA
| | - Shiyu Fan
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Valentina Bisogni
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, USA
| | - Gabriele Grosso
- Photonics Initiative, Advanced Science Research Center, City University of New York, New York City, NY, USA.
- Physics Program, Graduate Center, City University of New York, New York, NY, USA.
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4
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Ma J, Zhang J, Horder J, Sukhorukov AA, Toth M, Neshev DN, Aharonovich I. Engineering Quantum Light Sources with Flat Optics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2313589. [PMID: 38477536 DOI: 10.1002/adma.202313589] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2023] [Revised: 02/26/2024] [Indexed: 03/14/2024]
Abstract
Quantum light sources are essential building blocks for many quantum technologies, enabling secure communication, powerful computing, and precise sensing and imaging. Recent advancements have witnessed a significant shift toward the utilization of "flat" optics with thickness at subwavelength scales for the development of quantum light sources. This approach offers notable advantages over conventional bulky counterparts, including compactness, scalability, and improved efficiency, along with added functionalities. This review focuses on the recent advances in leveraging flat optics to generate quantum light sources. Specifically, the generation of entangled photon pairs through spontaneous parametric down-conversion in nonlinear metasurfaces, and single photon emission from quantum emitters including quantum dots and color centers in 3D and 2D materials are explored. The review covers theoretical principles, fabrication techniques, and properties of these sources, with particular emphasis on the enhanced generation and engineering of quantum light sources using optical resonances supported by nanostructures. The diverse application range of these sources is discussed and the current challenges and perspectives in the field are highlighted.
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Affiliation(s)
- Jinyong Ma
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, 2600, Australia
| | - Jihua Zhang
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, 2600, Australia
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, P. R. China
| | - Jake Horder
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, 2007, Australia
| | - Andrey A Sukhorukov
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, 2600, Australia
| | - Milos Toth
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, 2007, Australia
| | - Dragomir N Neshev
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), Department of Electronic Materials Engineering, Research School of Physics, Australian National University, Canberra, 2600, Australia
| | - Igor Aharonovich
- ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS), School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, 2007, Australia
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5
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Zhong D, Gao S, Saccone M, Greer JR, Bernardi M, Nadj-Perge S, Faraon A. Carbon-Related Quantum Emitter in Hexagonal Boron Nitride with Homogeneous Energy and 3-Fold Polarization. NANO LETTERS 2024; 24:1106-1113. [PMID: 38240528 PMCID: PMC10835729 DOI: 10.1021/acs.nanolett.3c03628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Most hexagonal boron nitride (hBN) single-photon emitters (SPEs) studied to date suffer from variable emission energy and unpredictable polarization, two crucial obstacles to their application in quantum technologies. Here, we report an SPE in hBN with an energy of 2.2444 ± 0.0013 eV created via carbon implantation that exhibits a small inhomogeneity of the emission energy. Polarization-resolved measurements reveal aligned absorption and emission dipole orientations with a 3-fold distribution, which follows the crystal symmetry. Photoluminescence excitation (PLE) spectroscopy results show the predictability of polarization is associated with a reproducible PLE band, in contrast with the non-reproducible bands found in previous hBN SPE species. Photon correlation measurements are consistent with a three-level model with weak coupling to a shelving state. Our ab initio excited-state calculations shed light on the atomic origin of this SPE defect, which consists of a pair of substitutional carbon atoms located at boron and nitrogen sites separated by a hexagonal unit cell.
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Affiliation(s)
- Ding Zhong
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Shiyuan Gao
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Max Saccone
- Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, United States
| | - Julia R Greer
- Division of Engineering and Applied Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Marco Bernardi
- Department of Applied Physics and Material Science, California Institute of Technology, Pasadena, California 91125, United States
| | - Stevan Nadj-Perge
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
| | - Andrei Faraon
- Thomas J. Watson, Sr., Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, United States
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125, United States
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6
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Wang XJ, Fang HH, Li ZZ, Wang D, Sun HB. Laser manufacturing of spatial resolution approaching quantum limit. LIGHT, SCIENCE & APPLICATIONS 2024; 13:6. [PMID: 38163839 PMCID: PMC10758390 DOI: 10.1038/s41377-023-01354-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/02/2023] [Revised: 12/07/2023] [Accepted: 12/08/2023] [Indexed: 01/03/2024]
Abstract
Atomic and close-to-atom scale manufacturing is a promising avenue toward single-photon emitters, single-electron transistors, single-atom memory, and quantum-bit devices for future communication, computation, and sensing applications. Laser manufacturing is outstanding to this end for ease of beam manipulation, batch production, and no requirement for photomasks. It is, however, suffering from optical diffraction limits. Herein, we report a spatial resolution improved to the quantum limit by exploiting a threshold tracing and lock-in method, whereby the two-order gap between atomic point defect complexes and optical diffraction limit is surpassed, and a feature size of <5 nm is realized. The underlying physics is that the uncertainty of local atom thermal motion dominates electron excitation, rather than the power density slope of the incident laser. We show that the colour centre yield in hexagonal boron nitride is transformed from stochastic to deterministic, and the emission from individual sites becomes polychromatic to monochromatic. As a result, single colour centres in the regular array are deterministically created with a unity yield and high positional accuracy, serving as a step forward for integrated quantum technological applications.
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Affiliation(s)
- Xiao-Jie Wang
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, China
| | - Hong-Hua Fang
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, China.
| | - Zhen-Ze Li
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, China
| | - Dan Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China
| | - Hong-Bo Sun
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, 100084, China.
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun, 130012, China.
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7
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Cai H, Rasmita A, Tan Q, Lai JM, He R, Cai X, Zhao Y, Chen D, Wang N, Mu Z, Huang Z, Zhang Z, Eng JJH, Liu Y, She Y, Pan N, Miao Y, Wang X, Liu X, Zhang J, Gao W. Interlayer donor-acceptor pair excitons in MoSe 2/WSe 2 moiré heterobilayer. Nat Commun 2023; 14:5766. [PMID: 37723156 PMCID: PMC10507070 DOI: 10.1038/s41467-023-41330-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 08/31/2023] [Indexed: 09/20/2023] Open
Abstract
Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moiré MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moiré heterostructures and pave new directions for engineering interlayer exciton properties in moiré superlattices.
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Affiliation(s)
- Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruihua He
- School of Biological Sciences, Nanyang Technological University, Singapore, 637551, Singapore
| | - Xiangbin Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yan Zhao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Disheng Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zumeng Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - John J H Eng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, Singapore
| | - Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yongzhi She
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Nan Pan
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Yansong Miao
- School of Biological Sciences, Nanyang Technological University, Singapore, 637551, Singapore
| | - Xiaoping Wang
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore.
- Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore.
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8
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Kim SH, Park KH, Lee YG, Kang SJ, Park Y, Kim YD. Color Centers in Hexagonal Boron Nitride. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2344. [PMID: 37630929 PMCID: PMC10458833 DOI: 10.3390/nano13162344] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/14/2023] [Revised: 08/10/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultraviolet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
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Affiliation(s)
- Suk Hyun Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Kyeong Ho Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Young Gie Lee
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17101, Republic of Korea;
| | - Yongsup Park
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
| | - Young Duck Kim
- Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea; (S.H.K.)
- Department of Information Display, Kyung Hee University, Seoul 02447, Republic of Korea
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9
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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10
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Li S, Gali A. Identification of an Oxygen Defect in Hexagonal Boron Nitride. J Phys Chem Lett 2022; 13:9544-9551. [PMID: 36201340 PMCID: PMC9589898 DOI: 10.1021/acs.jpclett.2c02687] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/30/2022] [Accepted: 10/04/2022] [Indexed: 05/30/2023]
Abstract
Paramagnetic fluorescent defects in two-dimensional hexagonal boron nitride (hBN) are promising building blocks for quantum information processing. Although numerous defect-related single-photon sources and a few quantum bits have been found, except for the boron vacancy, their identification is still elusive. Here, we demonstrate that the comparison of experimental and first-principles simulated electron paramagnetic resonance (EPR) spectra is a powerful tool for defect identification in hBN, and first-principles modeling is inevitable in this process as a result of the dense nuclear spin environment of hBN. In particular, a recently observed EPR center is associated with the negatively charged oxygen vacancy complex by means of the many-body perturbation theory method on top of hybrid density functional calculations. To our surprise, the negatively charged oxygen vacancy complex produces a coherent emission around 2 eV with a well-reproducing previously recorded photoluminescence spectrum of some quantum emitters, according to our calculations.
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Affiliation(s)
- Song Li
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
| | - Adam Gali
- Wigner
Research Centre for Physics, Post Office Box 49, H-1525Budapest, Hungary
- Department
of Atomic Physics, Institute of Physics, Budapest University of Technology and Economics, Műegyetem rakpart 3, H-1111Budapest, Hungary
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11
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Tailoring the Emission Wavelength of Color Centers in Hexagonal Boron Nitride for Quantum Applications. NANOMATERIALS 2022; 12:nano12142427. [PMID: 35889651 PMCID: PMC9323195 DOI: 10.3390/nano12142427] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/21/2022] [Revised: 07/08/2022] [Accepted: 07/12/2022] [Indexed: 11/17/2022]
Abstract
Optical quantum technologies promise to revolutionize today’s information processing and sensors. Crucial to many quantum applications are efficient sources of pure single photons. For a quantum emitter to be used in such application, or for different quantum systems to be coupled to each other, the optical emission wavelength of the quantum emitter needs to be tailored. Here, we use density functional theory to calculate and manipulate the transition energy of fluorescent defects in the two-dimensional material hexagonal boron nitride. Our calculations feature the HSE06 functional which allows us to accurately predict the electronic band structures of 267 different defects. Moreover, using strain-tuning we can tailor the optical transition energy of suitable quantum emitters to match precisely that of quantum technology applications. We therefore not only provide a guide to make emitters for a specific application, but also have a promising pathway of tailoring quantum emitters that can couple to other solid-state qubit systems such as color centers in diamond.
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