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Cheng T, Meng Y, Luo M, Xian J, Luo W, Wang W, Yue F, Ho JC, Yu C, Chu J. Advancements and Challenges in the Integration of Indium Arsenide and Van der Waals Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403129. [PMID: 39030967 DOI: 10.1002/smll.202403129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2024] [Revised: 06/17/2024] [Indexed: 07/22/2024]
Abstract
The strategic integration of low-dimensional InAs-based materials and emerging van der Waals systems is advancing in various scientific fields, including electronics, optics, and magnetics. With their unique properties, these InAs-based van der Waals materials and devices promise further miniaturization of semiconductor devices in line with Moore's Law. However, progress in this area lags behind other 2D materials like graphene and boron nitride. Challenges include synthesizing pure crystalline phase InAs nanostructures and single-atomic-layer 2D InAs films, both vital for advanced van der Waals heterostructures. Also, diverse surface state effects on InAs-based van der Waals devices complicate their performance evaluation. This review discusses the experimental advances in the van der Waals epitaxy of InAs-based materials and the working principles of InAs-based van der Waals devices. Theoretical achievements in understanding and guiding the design of InAs-based van der Waals systems are highlighted. Focusing on advancing novel selective area growth and remote epitaxy, exploring multi-functional applications, and incorporating deep learning into first-principles calculations are proposed. These initiatives aim to overcome existing bottlenecks and accelerate transformative advancements in integrating InAs and van der Waals heterostructures.
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Affiliation(s)
- Tiantian Cheng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Yuxin Meng
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Man Luo
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Jiachi Xian
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Wenjin Luo
- Department of Physics and JILA, University of Colorado, Boulder, CO, 80309, USA
| | - Weijun Wang
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Fangyu Yue
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
| | - Johnny C Ho
- Department of Materials Science and Engineering and State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong SAR, 999077, P. R. China
| | - Chenhui Yu
- School of Microelectronics and School of Integrated Circuits, School of Information Science and Technology, Nantong University, Nantong, 226019, P. R. China
| | - Junhao Chu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, P. R. China
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Kang Y, Lin F, Tang J, Dai Q, Hou X, Meng B, Wang D, Wang L, Wei Z. Controlling the morphology and wavelength of self-assembled coaxial GaAs/Ga(As)Sb/GaAs single quantum-well nanowires. Phys Chem Chem Phys 2023; 25:1248-1256. [PMID: 36530045 DOI: 10.1039/d2cp04630j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Antimonide-based ternary III-V nanowires (NWs) provide a tunable bandgap over a wide range, and the GaAsSb material system has prospective applications in the 1.3-1.55 μm spectral range of optical communications. In this paper, GaAs/Ga(As)Sb/GaAs single quantum well (SQW) NWs were grown on Si(111) substrates by molecular beam epitaxy (MBE). In addition, the morphologies and tunable wavelengths of the GaAs/Ga(As)Sb/GaAs SQWs were adjusted by interrupting the Ga droplets and changing the growth temperatures and V/III ratios. The four morphologies of the GaAs/Ga(As)Sb/GaAs SQW NWs were observed by scanning electron microscopy (SEM). The microscale lattice structure related to the incorporation of Sb in GaAs/Ga(As)Sb/GaAs SQWs was studied by Raman spectroscopy. The crystal quality of the GaAs/Ga(As)Sb/GaAs SQW NWs was researched by X-ray diffraction (XRD) and transmission electron microscopy (TEM). In addition, the optical properties of the GaAs/Ga(As)Sb/GaAs SQWs were investigated by photoluminescence (PL) spectroscopy. The PL spectra showed the peak emission wavelength range of ∼818 nm (GaAs) to ∼1628 nm (GaSb) at 10 K. This study provides an approach to enhance the effective control of the morphology, structure and wavelength of quantum well or core-shell NWs.
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Affiliation(s)
- Yubin Kang
- College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China. .,State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Fengyuan Lin
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Jilong Tang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China. .,Semiconductor Laser and Application Laboratory, Zhongshan Institute of Changchun University of Science and Technology, Zhongshan, 528437, P. R. China
| | - Qian Dai
- Southwest Institute of Technical Physics, Chengdu, 610041, P. R. China
| | - Xiaobing Hou
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Bingheng Meng
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Dongyue Wang
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
| | - Le Wang
- College of Optics and Electronic Science and Technology, China Jiliang University, Hangzhou, 310018, P. R. China.
| | - Zhipeng Wei
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, P. R. China.
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Chen X, Alradhi H, Jin ZM, Zhu L, Sanchez AM, Ma S, Zhuang Q, Shao J. Mid-infrared photoluminescence revealing internal quantum efficiency enhancement of type-I and type-II InAs core/shell nanowires. OPTICS LETTERS 2022; 47:5208-5211. [PMID: 36181223 DOI: 10.1364/ol.473154] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2022] [Accepted: 09/12/2022] [Indexed: 06/16/2023]
Abstract
Internal quantum efficiency (IQE) is an important figure of merit for photoelectric applications. While the InAs core/shell (c/s) nanowire (NW) is a promising solution for efficient quantum emission, the relationship between the IQE and shell coating remains unclear. This Letter reports mid-infrared PL measurements on InAs/InGaAs, InAs/AlSb, and InAs/GaSb c/s NWs, together with bare InAs NWs as a reference. Analyses show that the IQE is depressed by a shell coating at 9 K but gets improved by up to approximately 50% for the InGaAs shell coating at 40 -140 K and up to approximately 20% beyond 110 K for the AlSb shell. The effect is ascribed not only to the crystal quality but more importantly to the radial band alignment. The result indicates the high-temperature IQE improvement of the type-I and type-II c/s NWs and the appropriateness of the mid-infrared PL analyses for narrow-gap NW evaluation.
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Wen L, Pan D, Liu L, Tong S, Zhuo R, Zhao J. Large-Composition-Range Pure-Phase Homogeneous InAs 1-xSb x Nanowires. J Phys Chem Lett 2022; 13:598-605. [PMID: 35019661 DOI: 10.1021/acs.jpclett.1c04001] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Narrow bandgap InAs1-xSbx nanowires show broad prospects for applications in wide spectrum infrared detectors, high-performance transistors, and quantum computation. Realizing such applications requires a fine control of the composition and crystal structure of nanowires. However, the fabrication of large-composition-range pure-phase homogeneous InAs1-xSbx nanowires remains a huge challenge. Here, we first report the growth of large-composition-range stemless InAs1-xSbx nanowires (0 ≤ x ≤ 0.63) on Si (111) substrates by molecular beam epitaxy. We find that pure-phase InAs1-xSbx nanowires can be successfully obtained by controlling the antimony content x, nanowire diameter, and nanowire growth direction. Detailed energy dispersive spectrum data show that the antimony is uniformly distributed along the axial and radial directions of InAs1-xSbx nanowires and no spontaneous core-shell nanostructures form in the nanowires. On the basis of field-effect measurements, we confirm that InAs1-xSbx nanowires exhibit good conductivity and their mobilities can reach 4200 cm2 V-1 s-1 at 7 K. Our work lays the foundation for the development of InAs1-xSbx nanowire optoelectronic, electronic, and quantum devices.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Pan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lei Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Shucheng Tong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
| | - Ran Zhuo
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianhua Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
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Ghasemi M, Leshchenko ED, Johansson J. Assembling your nanowire: an overview of composition tuning in ternary III-V nanowires. NANOTECHNOLOGY 2021; 32:072001. [PMID: 33091889 DOI: 10.1088/1361-6528/abc3e2] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems-ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III x III1-x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV x V1-x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).
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Affiliation(s)
| | - Egor D Leshchenko
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
| | - Jonas Johansson
- Solid State Physics and NanoLund, Lund University, P O Box 118, SE-221 00 Lund, Sweden
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Yao X, Zhang X, Sun Q, Wei D, Chen P, Zou J. Anomalous Photoelectrical Properties through Strain Engineering Based on a Single Bent InAsSb Nanowire. ACS APPLIED MATERIALS & INTERFACES 2021; 13:5691-5698. [PMID: 33470805 DOI: 10.1021/acsami.0c16028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In this study, electrical and photoresponse properties of bent InAsSb nanowires (NWs) were investigated to explore the impact of bending strain on the photoelectrical properties. The corresponding morphological and structural observations demonstrate the phase segregation and strain in the core-shell zinc-blende-structured InAsSb NWs. It is found that the device made of bent InAsSb individual NW presents the switch from negative photoconductivity (NPC) and positive photoconductivity (PPC). The transformation between NPC and PPC can be achieved by not only gate voltage but also bias voltage, indicating the potential in the pervasive computing of bent InAsSb NWs. This work combines the semiconductor properties, light excitation, and piezoelectric effect of the InAsSb NWs, providing new ideas for next-generation photoelectrical nanodevices.
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Affiliation(s)
- Xiaomei Yao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
| | - Xutao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710129, China
| | | | - Dongdong Wei
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Pingping Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
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Anyebe EA, Kesaria M. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. NANO SELECT 2020. [DOI: 10.1002/nano.202000142] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022] Open
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Wen L, Liu L, Liao D, Zhuo R, Pan D, Zhao J. Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy. NANOTECHNOLOGY 2020; 31:465602. [PMID: 32750681 DOI: 10.1088/1361-6528/abac32] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
InAs1-x Sb x nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the nanowires. Here, we report on the silver-assisted growth of InAs1-x Sb x nanowires by molecular-beam epitaxy for the first time. We find that the growth parameters including growth temperature, indium flux and substrate play an important role in nanowire growth. Relatively high growth temperatures and low indium fluxes can suppress the growth of non-[111]-oriented nanowires on Si (111) substrates. Vertically aligned InAs1-x Sb x nanowires with high aspect ratios can be achieved on GaAs (111)B substrates. Detailed structural studies suggest that high-quality InAs1-x Sb x nanowires can be obtained by increasing antimony content. Silver-indium alloy segregation is found in ternary alloy InAs1-x Sb x nanowires, and it plays a key role in morphological evolution of the nanowires. Our work provides useful insights into the controllable growth of high-quality III-V semiconductor nanowires.
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Affiliation(s)
- Lianjun Wen
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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Recent Progress on the Gold-Free Integration of Ternary III-As Antimonide Nanowires Directly on Silicon. NANOMATERIALS 2020; 10:nano10102064. [PMID: 33086569 PMCID: PMC7603276 DOI: 10.3390/nano10102064] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/27/2020] [Revised: 09/26/2020] [Accepted: 09/27/2020] [Indexed: 01/11/2023]
Abstract
During the last few years, there has been renewed interest in the monolithic integration of gold-free, Ternary III–As Antimonide (III–As–Sb) compound semiconductor materials on complementary metal-oxide-semiconductor (CMOS)—compatible silicon substrate to exploit its scalability, and relative abundance in high-performance and cost-effective integrated circuits based on the well-established technology. Ternary III–As–Sb nanowires (NWs) hold enormous promise for the fabrication of high-performance optoelectronic nanodevices with tunable bandgap. However, the direct epitaxial growth of gold-free ternary III–As–Sb NWs on silicon is extremely challenging, due to the surfactant effect of Sb. This review highlights the recent progress towards the monolithic integration of III–As–Sb NWs on Si. First, a comprehensive and in-depth review of recent progress made in the gold-free growth of III–As–Sb NWs directly on Si is explicated, followed by a detailed description of the root cause of Sb surfactant effect and its influence on the morphology and structural properties of Au-free ternary III–As–Sb NWs. Then, the various strategies that have been successfully deployed for mitigating the Sb surfactant effect for enhanced Sb incorporation are highlighted. Finally, recent advances made in the development of CMOS compatible, Ternary III–As–Sb NWs based, high-performance optoelectronic devices are elucidated.
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Xu T, Wang H, Chen X, Luo M, Zhang L, Wang Y, Chen F, Shan C, Yu C. Recent progress on infrared photodetectors based on InAs and InAsSb nanowires. NANOTECHNOLOGY 2020; 31:294004. [PMID: 32235081 DOI: 10.1088/1361-6528/ab8591] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
In recent years, quasi-1D semiconductor nanowires have attracted significant research interest in the field of optoelectronic devices. Indium arsenide (InAs) nanowire, a III-V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high-performance infrared photodetectors. Therefore, the material growth, device preparation and performance characteristics have attracted increasing attention, enabling high-sensitivity InAs nanowire photodetector from the visible to the MWIR at room temperature. This review starts by discussing the growth process of the low-dimensional structure and elementary properties of the material, such as the crystalline phase, mobility, morphology, surface states and metal contacts. Then, three solutions, including the visible-light-assisted infrared photodetection technology, vertical nanowire-array technology and band engineering by the growth of InAsSb nanowires with increasing Sb components, are elaborated to obtain longer cut-off wavelength MWIR photodetectors based on single InAs nanowire and its heterojunction structure. Finally, the potential and challenges of the state-of-the-art optoelectronic technologies for InAs nanowire MWIR photodetectors are summarized and compared, and preliminary suggestions for the technical development route and prospects are presented. This review mainly delineates the research progress of material growth, device fabrication and performance characterization of InAs nanowire MWIR photodetectors, providing a reference for the development of the next-generation high-performance photodetectors over a wide spectrum range.
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Affiliation(s)
- Tengfei Xu
- Jiangsu Key Laboratory of ASIC Design, School of Information Science and Technology, Nantong University, Nantong 226019, People's Republic of China. Key Laboratory of Space Active Opto-Electronics Technology, and State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China
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Chen X, Zhu L, Shao J. Spatially resolved and two-dimensional mapping modulated infrared photoluminescence spectroscopy with functional wavelength up to 20 μm. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2019; 90:093106. [PMID: 31575266 DOI: 10.1063/1.5111788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2019] [Accepted: 08/31/2019] [Indexed: 06/10/2023]
Abstract
The pixel-scale nonuniformity of the photoelectric response may be due either to the in-plane electronic inhomogeneity of the narrow-gap semiconductor or to the craft fluctuation during the fabrication process, which limits the imaging performance of the infrared focal plane array (FPA) photodetector. Accordingly, a nondestructive technique is most desirable for examining the spatial uniformity of the optoelectronic properties of the narrow-gap semiconductor to identify the origin of the FPA response nonuniformity. This article introduces a spatially resolved and two-dimensional mapping infrared photoluminescence (PL) technique, especially suitable for characterizing FPA narrow-gap semiconductors, based on the modulated PL method with a step-scan Fourier transform infrared spectrometer. The experimental configuration is described, and typical applications are presented as examples to a 960 × 640 μm2 area of an InAsSbP-on-InAs layer in the medium-wave infrared range and a 960 × 960 μm2 area of a HgTe/HgCdTe superlattice (SL) in the long-wave infrared range. The results indicate that, within a measurement duration of about 30 s/spectrum, a sufficiently high signal-to-noise ratio (SNR) of over 50 is achieved with a spectral resolution of 16 cm-1 for the InAsSbP-on-InAs layer and a SNR over 30 is achieved with a spectral resolution of 12 cm-1 for the HgTe/HgCdTe SL, which warrants reliable identification of the subtle differences among the spatially resolved and two-dimensional mapping PL spectra. The imaging of the in-plane distribution of PL energy, intensity, and linewidth is realized quantitatively. The results indicate the feasibility and functionality of the spatially resolved and two-dimensional mapping PL spectroscopy for the narrow-gap semiconductors in a wide infrared range.
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Affiliation(s)
- Xiren Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China
| | - Liangqing Zhu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China
| | - Jun Shao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 200083 Shanghai, China
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Ren D, Ahtapodov L, van Helvoort ATJ, Weman H, Fimland BO. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. NANOTECHNOLOGY 2019; 30:294001. [PMID: 30917343 DOI: 10.1088/1361-6528/ab13ed] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Epitaxially grown ternary III-arsenide-antimonide (III-As-Sb) nanowires (NWs) are increasingly attracting attention due to their feasibility as a platform for the integration of largely lattice-mismatched antimonide-based heterostructures while preserving the high crystal quality. This and the inherent bandgap tuning flexibility of III-As-Sb in the near- and mid-infrared wavelength regions are important and auspicious premises for a variety of optoelectronic applications. In this review, we summarize the current understanding of the nucleation, morphology-change and crystal phase evolution of GaAsSb and InAsSb NWs and their characterization, especially in relation to Sb incorporation during growth. By linking these findings to the optical properties in such ternary NWs and their heterostructures, a brief account of the ongoing development of III-As-Sb NW-based photodetectors and light emitters is also given.
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Affiliation(s)
- Dingding Ren
- Department of Electronic Systems, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
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Sokolovskii AS, Robson MT, LaPierre RR, Dubrovskii VG. Modeling selective-area growth of InAsSb nanowires. NANOTECHNOLOGY 2019; 30:285601. [PMID: 30913550 DOI: 10.1088/1361-6528/ab1375] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
An analytical growth model is presented to explain the influence of antimony fractional flux on the morphology evolution of catalyst-free InAs1-x Sb x semiconductor nanowires grown by the selective-area vapor-solid mechanism on a Si (111) substrate by molecular beam epitaxy. Increasing Sb fractional flux promoted radial growth and suppressed axial growth, resulting in 'nano-disks'. This behavior is explained by a model of indium adatom diffusion along nanowire facets.
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Affiliation(s)
- A S Sokolovskii
- ITMO University, Kronverkskiy pr. 49, 197101 St. Petersburg, Russia. Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S4L7, Canada
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Gao Z, Sun J, Han M, Yin Y, Gu Y, Yang ZX, Zeng H. Recent advances in Sb-based III-V nanowires. NANOTECHNOLOGY 2019; 30:212002. [PMID: 30708362 DOI: 10.1088/1361-6528/ab03ee] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Owing to the high mobility, narrow bandgap, strong spin-orbit coupling and large g-factor, Sb-based III-V nanowires (NWs) attracted significant interests in high speed electronics, long-wavelength photodetectors and quantum superconductivity in the past decade. In this review, we aim to give an integrated summarization about the recent advances in binary as well as ternary Sb-based III-V NWs, starting from the fundamental properties, NWs growth mechanism, typical synthetic methods to their applications in transistors, photodetectors, and Majorana fermions detection. Up to now, famous NWs growth techniques of solid-source chemical vapor deposition (CVD), molecular beam epitaxy, metal organic vapor phase epitaxy and metal organic CVD etc have been adopted and developed for the controllable growth of Sb-based III-V NWs. Several parameters including heating temperature, III/V ratio of source materials, growth temperature, catalyst size and kinds, and growth substrate play important roles on the morphology, position, diameter distribution, growth orientation and crystal phase of Sb-based III-V NWs. Furthermore, we discuss the photoelectrical applications of Sb-based III-V NWs such as field-effect-transistors, tunnel diode, low-power inverter, and infrared detectors etc. Importantly, due to the strongest spin-orbit interaction and giant g-factor among all III-V semiconductors, InSb with the geometry of one-dimension NW is considered as the most promising candidate for the detection of Majorana fermions. In the end, we also summarize the main challenges remaining in the field and put forward some suggestions for the future development of Sb-based III-V NWs.
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Affiliation(s)
- Zhaofeng Gao
- Shenzhen Research Institute of Shandong University, Shenzhen, 518057, People's Republic of China. School of Microelectronics, Shandong University, Jinan, 250100, People's Republic of China
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Høiaas IM, Liudi Mulyo A, Vullum PE, Kim DC, Ahtapodov L, Fimland BO, Kishino K, Weman H. GaN/AlGaN Nanocolumn Ultraviolet Light-Emitting Diode Using Double-Layer Graphene as Substrate and Transparent Electrode. NANO LETTERS 2019; 19:1649-1658. [PMID: 30702300 DOI: 10.1021/acs.nanolett.8b04607] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
The many outstanding properties of graphene have impressed and intrigued scientists for the last few decades. Its transparency to light of all wavelengths combined with a low sheet resistance makes it a promising electrode material for novel optoelectronics. So far, no one has utilized graphene as both the substrate and transparent electrode of a functional optoelectronic device. Here, we demonstrate the use of double-layer graphene as a growth substrate and transparent conductive electrode for an ultraviolet light-emitting diode in a flip-chip configuration, where GaN/AlGaN nanocolumns are grown as the light-emitting structure using plasma-assisted molecular beam epitaxy. Although the sheet resistance is increased after nanocolumn growth compared with pristine double-layer graphene, our experiments show that the double-layer graphene functions adequately as an electrode. The GaN/AlGaN nanocolumns are found to exhibit a high crystal quality with no observable defects or stacking faults. Room-temperature electroluminescence measurements show a GaN related near bandgap emission peak at 365 nm and no defect-related yellow emission.
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Affiliation(s)
- Ida Marie Høiaas
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Andreas Liudi Mulyo
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
- Department of Engineering and Applied Sciences , Sophia University , 102-8554 Tokyo , Japan
| | | | - Dong-Chul Kim
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Lyubomir Ahtapodov
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Bjørn-Ove Fimland
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
| | - Katsumi Kishino
- Department of Engineering and Applied Sciences , Sophia University , 102-8554 Tokyo , Japan
- Sophia Nanotechnology Research Center , Sophia University , 102-8554 , Tokyo , Japan
| | - Helge Weman
- Department of Electronic Systems , Norwegian University of Science and Technology (NTNU) , NO-7491 Trondheim , Norway
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16
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Berdnikov Y, Sibirev NV, Khayrudinov V, Alaferdov A, Moshkalev S, Ubyivovk EV, Lipsanen H, Bouravleuv A. Growth of GaAs nanowire–graphite nanoplatelet hybrid structures. CrystEngComm 2019. [DOI: 10.1039/c9ce01027k] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The scenarios of MOVPE growth of planar and non-planar GaAs nanowires are controlled with graphite nanoplatelet substrates and catalyst placement.
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Affiliation(s)
| | | | | | - Andrei Alaferdov
- Center for Semiconductor Components
- State University of Campinas
- Campinas
- Brazil
| | - Stanislav Moshkalev
- Center for Semiconductor Components
- State University of Campinas
- Campinas
- Brazil
| | | | - Harri Lipsanen
- Department of Electronics and Nanoengineering
- Micronova, Aalto University
- Finland
| | - Alexei Bouravleuv
- Department of Electronics and Nanoengineering
- Micronova, Aalto University
- Finland
- St. Petersburg Academic University
- 194021 St. Petersburg
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17
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Baboli MA, Slocum MA, Kum H, Wilhelm TS, Polly SJ, Hubbard SM, Mohseni PK. Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping. CrystEngComm 2019. [DOI: 10.1039/c8ce01666f] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Self-assembly of InAs nanowire arrays with highest reported aspect ratios and number density by van der Waals epitaxy on graphene is presented.
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Affiliation(s)
- Mohadeseh A. Baboli
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Michael A. Slocum
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Hyun Kum
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Thomas S. Wilhelm
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Stephen J. Polly
- NanoPower Research Laboratories
- Rochester Institute of Technology
- Rochester
- USA
| | - Seth M. Hubbard
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
| | - Parsian K. Mohseni
- Microsystems Engineering
- Rochester Institute of Technology
- Rochester
- USA
- NanoPower Research Laboratories
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18
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Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors. Sci Rep 2017; 7:46110. [PMID: 28393845 PMCID: PMC5385536 DOI: 10.1038/srep46110] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/08/2016] [Accepted: 03/08/2017] [Indexed: 11/09/2022] Open
Abstract
The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420-450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices.
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19
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Zhuang QD, Alradhi H, Jin ZM, Chen XR, Shao J, Chen X, Sanchez AM, Cao YC, Liu JY, Yates P, Durose K, Jin CJ. Optically efficient InAsSb nanowires for silicon-based mid-wavelength infrared optoelectronics. NANOTECHNOLOGY 2017; 28:105710. [PMID: 28177930 DOI: 10.1088/1361-6528/aa59c5] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
InAsSb nanowires (NWs) with a high Sb content have potential in the fabrication of advanced silicon-based optoelectronics such as infrared photondetectors/emitters and highly sensitive phototransistors, as well as in the generation of renewable electricity. However, producing optically efficient InAsSb NWs with a high Sb content remains a challenge, and optical emission is limited to 4.0 μm due to the quality of the nanowires. Here, we report, for the first time, the success of high-quality and optically efficient InAsSb NWs enabling silicon-based optoelectronics operating in entirely mid-wavelength infrared. Pure zinc-blende InAsSb NWs were realized with efficient photoluminescence emission. We obtained room-temperature photoluminescence emission in InAs NWs and successfully extended the emission wavelength in InAsSb NWs to 5.1 μm. The realization of this optically efficient InAsSb NW material paves the way to realizing next-generation devices, combining advances in III-V semiconductors and silicon.
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Affiliation(s)
- Q D Zhuang
- Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
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20
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Chen X, Zhuang Q, Alradhi H, Jin ZM, Zhu L, Chen X, Shao J. Midinfrared Photoluminescence up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of InAs Nanowires. NANO LETTERS 2017; 17:1545-1551. [PMID: 28231002 DOI: 10.1021/acs.nanolett.6b04629] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher-energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.
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Affiliation(s)
- Xiren Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 200083 Shanghai, China
| | - Qiandong Zhuang
- Physics Department, Lancaster University , LA14YB Lancaster, United Kingdom
| | - H Alradhi
- Physics Department, Lancaster University , LA14YB Lancaster, United Kingdom
| | - Zh M Jin
- Physics Department, Lancaster University , LA14YB Lancaster, United Kingdom
| | - Liangqing Zhu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 200083 Shanghai, China
- Key Laboratory of Polar Materials and Devices, East China Normal University , 200062 Shanghai, China
| | - Xin Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 200083 Shanghai, China
| | - Jun Shao
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 200083 Shanghai, China
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21
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Antohe VA, Nysten E, Martínez-Huerta JM, Pereira de Sá PM, Piraux L. Annealing effects on the magnetic properties of highly-packed vertically-aligned nickel nanotubes. RSC Adv 2017. [DOI: 10.1039/c7ra01276d] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
Hysteresis loops showing the decrease of the saturation magnetic moment (left) through a dense array of vertically-aligned Ni nanotubes after their progressive thermal conversion into hybrid ferromagnetic/antiferromagnetic Ni/NiO nanotubes (right).
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Affiliation(s)
- Vlad-Andrei Antohe
- Institute of Condensed Matter and Nanosciences (IMCN)
- Université Catholique de Louvain (UCL)
- B-1348 Louvain-la-Neuve
- Belgium
- Research and Development Center for Materials and Electronic & Optoelectronic Devices (MDEO)
| | - Emeline Nysten
- Institute of Condensed Matter and Nanosciences (IMCN)
- Université Catholique de Louvain (UCL)
- B-1348 Louvain-la-Neuve
- Belgium
| | - Juan Manuel Martínez-Huerta
- Institute of Condensed Matter and Nanosciences (IMCN)
- Université Catholique de Louvain (UCL)
- B-1348 Louvain-la-Neuve
- Belgium
| | - Pedro Miguel Pereira de Sá
- Institute of Condensed Matter and Nanosciences (IMCN)
- Université Catholique de Louvain (UCL)
- B-1348 Louvain-la-Neuve
- Belgium
| | - Luc Piraux
- Institute of Condensed Matter and Nanosciences (IMCN)
- Université Catholique de Louvain (UCL)
- B-1348 Louvain-la-Neuve
- Belgium
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22
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Meyer-Holdt J, Kanne T, Sestoft JE, Gejl A, Zeng L, Johnson E, Olsson E, Nygård J, Krogstrup P. Ag-catalyzed InAs nanowires grown on transferable graphite flakes. NANOTECHNOLOGY 2016; 27:365603. [PMID: 27479073 DOI: 10.1088/0957-4484/27/36/365603] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.
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Affiliation(s)
- Jakob Meyer-Holdt
- Nano-Science Center, Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark. University of Chinese Academy of Sciences, Sino-Danish Center for Education & Research (SDC), Beijing 100049, People's Republic of China
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23
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Mataev E, Rastogi SK, Madhusudan A, Bone J, Lamprinakos N, Picard Y, Cohen-Karni T. Synthesis of Group IV Nanowires on Graphene: The Case of Ge Nanocrawlers. NANO LETTERS 2016; 16:5267-5272. [PMID: 27400248 DOI: 10.1021/acs.nanolett.6b02451] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
In recent years, there has been a growing interest in using graphene as a synthesis platform for polymers, zero-dimensional (0D) materials, one-dimensional materials (1D), and two-dimensional (2D) materials. Here, we report the investigation of the growth of germanium nanowires (GeNWs) and germanium nanocrawlers (GeNCs) on single-layer graphene surfaces. GeNWs and GeNCs are synthesized on graphene films by gold nanoparticles catalyzed vapor-liquid-solid growth mechanism. The addition of hydrogen chloride gas (HCl) at the nucleation step increased the propensity toward GeNCs growth on the surface. As the time lag before HCl introduction during the nucleation step increased, a significant change in the number of out-of-plane GeNWs versus in-plane GeNCs was observed. The nucleation temperature and time played a key role in the formation of GeNCs as well. The fraction of GeNCs (χNCs) decreased from 0.95 ± 0.01 to 0.66 ± 0.07 when the temperature was kept at 305 °C for 15 s versus maintained at 305 °C throughout the process, respectively. GeNCs exhibit ⟨112⟩ as the preferred growth direction whereas GeNWs exhibit both ⟨112⟩ and ⟨111⟩ as the preferred growth directions. Finally, our growth model suggests a possible mechanism for the preference of an in-plane GeNC growth on graphene versus GeNW on SiO2. These findings open up unique opportunities for fundamental studies of crystal growth on graphene, as well as enable exploration of new electronic interfaces between group IV materials and graphene, potentially toward designing new geometries for hybrid materials sensors.
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Affiliation(s)
- Elnatan Mataev
- Department of Biomedical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Sahil Kumar Rastogi
- Department of Biomedical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Atul Madhusudan
- Department of Biomedical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Jennifer Bone
- Department of Biomedical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Nicholas Lamprinakos
- Department of Biomedical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
- Department of Materials Science and Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Yoosuf Picard
- Department of Materials Science and Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
| | - Tzahi Cohen-Karni
- Department of Biomedical Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
- Department of Materials Science and Engineering, Carnegie Mellon University , Pittsburgh, Pennsylvania 15213, United States
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24
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Zhang Z, Chen PP, Lu W, Zou J. Defect-free thin InAs nanowires grown using molecular beam epitaxy. NANOSCALE 2016; 8:1401-1406. [PMID: 26671780 DOI: 10.1039/c5nr06429e] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this study, we designed a simple method to achieve the growth of defect-free thin InAs nanowires with a lateral dimension well below their Bohr radius on different substrate orientations. By depositing and annealing a thin layer of Au thin film on a (100) substrate surface, we have achieved the growth of defect-free uniform-sized thin InAs nanowires. This study provides a strategy to achieve the growth of pure defect-free thin nanowires.
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Affiliation(s)
- Zhi Zhang
- Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia.
| | - Ping-Ping Chen
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Wei Lu
- National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-Tian Road, Shanghai 200083, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia. and Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, QLD 4072, Australia
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25
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Um DY, Mandal A, Lee DS, Park JH, Lee CR. Demonstration of n-GaN:Si NWs having ultrahigh density and aspect ratio via a 3-step growth method using MOCVD. CrystEngComm 2016. [DOI: 10.1039/c5ce01832c] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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