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Mondal SK, Prakasan L, Kolluru N, Pradhan JR, Dasgupta S. Inkjet-Printed, High-Performance MoS 2 Transistors and Unipolar Logic Electronics. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42392-42405. [PMID: 39080865 DOI: 10.1021/acsami.4c05529] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/16/2024]
Abstract
Two-dimensional (2D) semiconductor field-effect film transistors combine large carrier mobility with mechanical flexibility and therefore can be ideally suitable for wearable electronics or at the sensor interfaces of smart sensor systems. However, such applications require large-area solution processing as opposed to single-flake devices, where the critical challenge to overcome is the high interflake resistance values. In this report, using a narrow-channel, near-vertical transport device architecture, we have fabricated inkjet-printed sub-20 nm channel electrolyte-gated transistors with predominantly intraflake carrier transport. Therefore, the electronics transport in these transistors is not dominated by the high interflake resistance, and the intraflake material properties including doping density, defect concentration, contact resistance, and threshold voltage modulation can be examined and optimized independently to achieve a current density as high as 280 μA·μm-1. In addition, through the passivation of the sulfur vacancies with a tailored surface treatment, we demonstrate an impressive On-Off current ratio exceeding 1 × 107, complemented by a low subthreshold swing of 100 mV·decade-1. Next, exploiting these high-performance transistors, unipolar depletion-load-type inverters have been fabricated that show a maximum gain of 31. Furthermore, we have realized NAND, NOR, and OR gates, demonstrating their seamless operation at a frequency of 1 kHz. Therefore, this work represents an important step forward to realize electronic circuits based on printed 2D thin film transistors.
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Affiliation(s)
- Sandeep Kumar Mondal
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Lakshmi Prakasan
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Naveen Kolluru
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Jyoti Ranjan Pradhan
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
| | - Subho Dasgupta
- Department of Materials Engineering, Indian Institute of Science (IISc), CV Raman Avenue, Bangalore 560012, India
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2
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Chen Y, Wu Z, Chen Z, Zhang S, Li W, Zhao Y, Wang Y, Liu Y. Molecular "backbone surgery" of electron-deficient heteroarenes based on dithienopyrrolobenzothiadiazole: conformation-dependent crystal structures and charge transport properties. Chem Sci 2024; 15:11761-11774. [PMID: 39092104 PMCID: PMC11290414 DOI: 10.1039/d4sc02794a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2024] [Accepted: 06/18/2024] [Indexed: 08/04/2024] Open
Abstract
Electron-deficient heteroarenes based on dithienopyrrolobenzothiadiazole (BTP) have been highly attractive due to their fascinating packing structures, broad absorption profiles, and promising applications in non-fullerene organic solar cells. However, the control of their crystal structures for superior charge transport still faces big challenges. Herein, a conformation engineering strategy is proposed to rationally manipulate the single crystal structure of BTP-series heteroarenes. The parent molecule BTPO-c has a 3D network crystal structure, which originates from its banana-shaped conformation. Subtracting one thiophene moiety from the central backbone leads to a looser brickwork crystal structure of the derivative BTPO-z because of its interrupted angular-shaped conformation. Further subtracting two thiophene moieties results in the derivative BTPO-l with a compact 2D-brickwork crystal structure due to its quasi-linear conformation with a unique dimer packing structure and short π-π stacking distance (3.30 Å). Further investigation of charge-transport properties via single-crystal organic transistors demonstrates that the compact 2D-brickwork crystal structure of BTPO-l leads to an excellent electron mobility of 3.5 cm2 V-1 s-1, much higher than that of BTPO-c with a 3D network (1.9 cm2 V-1 s-1) and BTPO-z with a looser brickwork structure (0.6 cm2 V-1 s-1). Notably, this study presents, for the first time, an elegant demonstration of the tunable single crystal structures of electron-deficient heteroarenes for efficient organic electronics.
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Affiliation(s)
- Yuzhong Chen
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Zeng Wu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Zekun Chen
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Shuixin Zhang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Wenhao Li
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Yan Zhao
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Yang Wang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
| | - Yunqi Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University Shanghai 200438 China
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3
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Daoulas KC, Markina AA. Effect of Materials Parameters on the Shape of Face-On Lamellae in Semi-Conducting Polymers: Insights From Qualitative Theory. Macromol Rapid Commun 2024; 45:e2300437. [PMID: 37811808 DOI: 10.1002/marc.202300437] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 10/05/2023] [Indexed: 10/10/2023]
Abstract
Polymer semiconductors frequently form crystals or mesophases with lamellae, that comprise alternating layers of stacked backbones and side chains. Controlling lamellar orientation in films is essential for obtaining efficient charge carrier transport. Herein, lamellar orientation is investigated in an application-relevant setup: lamellae assembled on a substrate that strongly favors face-on orientation, but exposed to a film surface that promotes orientation along an "easy" direction, other than face on. It is assumed that the face-on order propagates from the substrate, but the lamellae bend to reduce their surface energy. A qualitative free-energy model is developed. The deformation is investigated as a function of film thickness, effective Young modulus, anchoring coefficient, and easy direction at the free surface. The calculations highlight the importance of elastic constants - lamellae can substantially deform already when Young moduli are only an order of magnitude smaller than the values that are reported for crystals. Softer Young moduli are expected when lamellar assembly occurs in a non-solidified mesophase that can be an equilibrium or (more speculatively) a transient state prior to crystallization. The alternative scenario of a two-layered film is also evaluated, where edge-on and face-on grains form, respectively, at the free surface and substrate.
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Affiliation(s)
- Kostas Ch Daoulas
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Anastasia A Markina
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
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4
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Volpi M, Jouclas R, Liu J, Liu G, Catalano L, McIntosh N, Bardini M, Gatsios C, Modesti F, Turetta N, Beljonne D, Cornil J, Kennedy AR, Koch N, Erk P, Samorì P, Schweicher G, Geerts YH. Enantiopure Dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophenes: Reaching High Magnetoresistance Effect in OFETs. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2301914. [PMID: 37424043 PMCID: PMC10502826 DOI: 10.1002/advs.202301914] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Revised: 05/29/2023] [Indexed: 07/11/2023]
Abstract
Chiral molecules are known to behave as spin filters due to the chiral induced spin selectivity (CISS) effect. Chirality can be implemented in molecular semiconductors in order to study the role of the CISS effect in charge transport and to find new materials for spintronic applications. In this study, the design and synthesis of a new class of enantiopure chiral organic semiconductors based on the well-known dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) core functionalized with chiral alkyl side chains is presented. When introduced in an organic field-effect transistor (OFET) with magnetic contacts, the two enantiomers, (R)-DNTT and (S)-DNTT, show an opposite behavior with respect to the relative direction of the magnetization of the contacts, oriented by an external magnetic field. Each enantiomer displays an unexpectedly high magnetoresistance over one preferred orientation of the spin current injected from the magnetic contacts. The result is the first reported OFET in which the current can be switched on and off upon inversion of the direction of the applied external magnetic field. This work contributes to the general understanding of the CISS effect and opens new avenues for the introduction of organic materials in spintronic devices.
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Affiliation(s)
- Martina Volpi
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
| | - Rémy Jouclas
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
| | - Jie Liu
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
| | - Guangfeng Liu
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
| | - Luca Catalano
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
| | - Nemo McIntosh
- Laboratory for Chemistry of Novel MaterialsCenter for Research in Molecular Electronics and PhotonicsUniversity of MonsPlace du Parc 23MonsB‐7000Belgium
| | - Marco Bardini
- Laboratory for Chemistry of Novel MaterialsCenter for Research in Molecular Electronics and PhotonicsUniversity of MonsPlace du Parc 23MonsB‐7000Belgium
| | - Christos Gatsios
- Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH12489BerlinGermany
- Institut für Physik and IRIS AdlershofHumboldt‐Universitat zu Berlin12489BerlinGermany
| | | | - Nicholas Turetta
- CNRSUniversity of StrasbourgISIS UMR 7006, 8 Alleé Gaspard MongeStrasbourgF‐67000France
| | - David Beljonne
- Laboratory for Chemistry of Novel MaterialsCenter for Research in Molecular Electronics and PhotonicsUniversity of MonsPlace du Parc 23MonsB‐7000Belgium
| | - Jérôme Cornil
- Laboratory for Chemistry of Novel MaterialsCenter for Research in Molecular Electronics and PhotonicsUniversity of MonsPlace du Parc 23MonsB‐7000Belgium
| | - Alan R. Kennedy
- Department of Pure and Applied ChemistryUniversity of StrathclydeCathedral Street 295GlasgowG1 1XLUK
| | - Norbert Koch
- Helmholtz‐Zentrum Berlin für Materialien und Energie GmbH12489BerlinGermany
- Institut für Physik and IRIS AdlershofHumboldt‐Universitat zu Berlin12489BerlinGermany
| | - Peter Erk
- BASF SERGD – J542S67056Ludwigshafen am RheinGermany
| | - Paolo Samorì
- CNRSUniversity of StrasbourgISIS UMR 7006, 8 Alleé Gaspard MongeStrasbourgF‐67000France
| | - Guillaume Schweicher
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
| | - Yves H. Geerts
- Laboratoire de Chimie des PolymèresFaculté des SciencesUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 206/01Bruxelles1050Belgium
- International Solvay Institutes for Physics and ChemistryUniversité Libre de Bruxelles (ULB)Boulevard du Triomphe, CP 231Bruxelles1050Belgium
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5
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Ando T, Shimizu N, Yamamoto N, Matsuzawa NN, Maeshima H, Kaneko H. Design of Molecules with Low Hole and Electron Reorganization Energy Using DFT Calculations and Bayesian Optimization. J Phys Chem A 2022; 126:6336-6347. [PMID: 36053017 DOI: 10.1021/acs.jpca.2c05229] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
Materials exhibiting higher mobility than conventional organic semiconducting materials, such as fullerenes and fused thiophenes, are in high demand for applications in printed electronics. To discover new molecules that might show improved charge mobility, the adaptive design of experiments (DoE) to design molecules with low reorganization energy was performed by combining density functional theory (DFT) methods and machine learning techniques. DFT-calculated values of 165 molecules were used as an initial training dataset for a Gaussian process regression (GPR) model, and five rounds of molecular designs applying the GPR model and validation via DFT calculations were executed. As a result, new molecules whose reorganization energy is smaller than the lowest value in the initial training dataset were successfully discovered.
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Affiliation(s)
- Tatsuhito Ando
- Engineering Division, Panasonic Industry Co., Ltd., Kadoma, Osaka 571-8506, Japan
| | - Naoto Shimizu
- Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan
| | - Norihisa Yamamoto
- Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan
| | - Nobuyuki N Matsuzawa
- Engineering Division, Panasonic Industry Co., Ltd., Kadoma, Osaka 571-8506, Japan
| | - Hiroyuki Maeshima
- Engineering Division, Panasonic Industry Co., Ltd., Kadoma, Osaka 571-8506, Japan
| | - Hiromasa Kaneko
- Department of Applied Chemistry, School of Science and Technology, Meiji University, 1-1-1 Higashi-Mita, Tama-ku, Kawasaki, Kanagawa 214-8571, Japan
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6
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Walter LS, Axt A, Borchert JW, Kammerbauer T, Winterer F, Lenz J, Weber SAL, Weitz RT. Revealing and Controlling Energy Barriers and Valleys at Grain Boundaries in Ultrathin Organic Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200605. [PMID: 35905481 DOI: 10.1002/smll.202200605] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2022] [Revised: 07/11/2022] [Indexed: 06/15/2023]
Abstract
In organic electronics, local crystalline order is of critical importance for the charge transport. Grain boundaries between molecularly ordered domains are generally known to hamper or completely suppress charge transfer and detailed knowledge of the local electronic nature is critical for future minimization of such malicious defects. However, grain boundaries are typically hidden within the bulk film and consequently escape observation or investigation. Here, a minimal model system in form of monolayer-thin films with sub-nm roughness of a prototypical n-type organic semiconductor is presented. Since these films consist of large crystalline areas, the detailed energy landscape at single grain boundaries can be studied using Kelvin probe force microscopy. By controlling the charge-carrier density in the films electrostatically, the impact of the grain boundaries on charge transport in organic devices is modeled. First, two distinct types of grain boundaries are identified, namely energetic barriers and valleys, which can coexist within the same thin film. Their absolute height is found to be especially pronounced at charge-carrier densities below 1012 cm- 2 -the regime at which organic solar cells and light emitting diodes typically operate. Finally, processing conditions by which the type or energetic height of grain boundaries can be controlled are identified.
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Affiliation(s)
- Lisa S Walter
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
- I. Institute of Physics, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
| | - Amelie Axt
- Max Planck Institute for Polymer Research, 55128, Mainz, Germany
| | - James W Borchert
- I. Institute of Physics, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
| | - Theresa Kammerbauer
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Felix Winterer
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Jakob Lenz
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
| | - Stefan A L Weber
- Max Planck Institute for Polymer Research, 55128, Mainz, Germany
- Institute of Physics, Johannes Gutenberg-Universität Mainz, 55122, Mainz, Germany
| | - R Thomas Weitz
- Faculty of Physics, Ludwig-Maximilians-Universität München, 80539, Munich, Germany
- I. Institute of Physics, Georg-August-Universität Göttingen, 37077, Göttingen, Germany
- Center for Nanoscience (CeNS), Ludwig-Maximilians-Universität München, 80539, Munich, Germany
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7
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Kumagai S, Ishii H, Watanabe G, Yu CP, Watanabe S, Takeya J, Okamoto T. Nitrogen-Containing Perylene Diimides: Molecular Design, Robust Aggregated Structures, and Advances in n-Type Organic Semiconductors. Acc Chem Res 2022; 55:660-672. [PMID: 35157436 DOI: 10.1021/acs.accounts.1c00548] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/24/2023]
Abstract
ConspectusOrganic semiconductors (OSCs) have attracted much attention because of their potential applications for flexible and printed electronic devices and thus have been extensively investigated in a variety of research fields, such as organic chemistry, solid-state physics, and device physics and engineering. Organic thin-film transistors (OTFTs), a class of OSC-based devices, have been expected to be an alternative of silicon-based metal oxide semiconductor field-effect transistors (MOSFETs), which is the indispensable element for most of the current electronic devices. However, the noncovalently aggregated, van der Waals solid nature of the OSCs, by contrast to covalently bound silicon, conventionally exhibits lower carrier mobilities, limiting the practical applications of OTFTs. In particular, electron-transporting (i.e., n-type) OSCs lag behind their hole-transporting (p-type) counterparts in carrier mobility and ambient stability as OTFTs. This is primarily because of the difficulty in achieving compatibility between the aggregated structure exhibiting excellent carrier mobility and that with enough electron affinity. Recent understandings of carrier transport in OSCs explain that large and two-dimensionally isotropic transfer integrals coupled with small fluctuations are crucial for high carrier mobilities. In addition, from a practical point of view, the compatibility with practical device processes is highly required. Rational molecular design principles, therefore, are still demanded for developing OSCs and OTFTs toward high-end device applications.Herein, we will show our recent progress in the development of n-type OSCs with the key π-electron core (π-core) of benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) on the basis of single-crystal OTFT technologies and the band-transport model enabled by two-dimensional molecular packing arrangements. The critical point is the introduction of electronegative nitrogen atoms into the π-core: the nitrogen atoms in BQQDI not only deepen the molecular orbital energies but also allow hydrogen-bonding-like attractive intermolecular interactions to control the aggregated structures, unlike the conventional role of the nitrogen introduced into OSCs only for the former role. Hence, the BQQDI analogues exhibit air-stable OTFT behavior and two-dimensional brickwork packing structures. Specifically, phenethyl-substituted analogue (PhC2-BQQDI) has been shown as the first principal BQQDI-based material, demonstrating solution-processable thin-film single crystals, fewer anisotropic transfer integrals, and an effective suppression of molecular motions, leading to band-like electron-transport properties and stress-durable n-channel OTFT performances, in conjunction with the support of computational calculations. Insights into more fundamental points of view have been found by side-chain derivatization and OTFT studies on polycrystalline and single-crystal films. We hope that this Account provides readers with new strategies for designing high-performance OSCs by two-dimensional control of the aggregated structures.
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Affiliation(s)
- Shohei Kumagai
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Hiroyuki Ishii
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- Department of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Go Watanabe
- Department of Physics, School of Science, Kitasato University, 1-15-1 Kitasato, Minami-ku, Sagamihara, Kanagawa 252-0373, Japan
| | - Craig P. Yu
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- MANA, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 205-0044, Japan
| | - Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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8
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Borchert JW, Weitz RT, Ludwigs S, Klauk H. A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104075. [PMID: 34623710 DOI: 10.1002/adma.202104075] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2021] [Revised: 08/20/2021] [Indexed: 06/13/2023]
Abstract
To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin-film transistors (TFTs) has reported channel-width-normalized contact resistances below 100 Ωcm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin-film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge-carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi-level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device-engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.
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Affiliation(s)
- James W Borchert
- 1st Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany
| | - R Thomas Weitz
- 1st Institute of Physics, Georg August University of Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany
| | - Sabine Ludwigs
- IPOC - Functional Polymers, Institute of Polymer Chemistry, University of Stuttgart, Pfaffenwaldring 55, 70569, Stuttgart, Germany
| | - Hagen Klauk
- Max Planck Institute for Solid State Research, Heisenbergstraße 1, 70569, Stuttgart, Germany
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9
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Approaching isotropic charge transport of n-type organic semiconductors with bulky substituents. Commun Chem 2021; 4:155. [PMID: 36697635 PMCID: PMC9814529 DOI: 10.1038/s42004-021-00583-2] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2020] [Accepted: 09/10/2021] [Indexed: 01/28/2023] Open
Abstract
Benzo[de]isoquinolino[1,8-gh]quinolinetetracarboxylic diimide (BQQDI) is an n-type organic semiconductor that has shown unique multi-fold intermolecular hydrogen-bonding interactions, leading to aggregated structures with excellent charge transports and electron mobility properties. However, the strong intermolecular anchoring of BQQDI presents challenges for fine-tuning the molecular assembly and improving the semiconducting properties. Herein, we report the design and synthesis of two BQQDI derivatives with phenyl- and cyclohexyl substituents (Ph-BQQDI and Cy6-BQQDI), where the two organic semiconductors show distinct molecular assemblies and degrees of intermolecular orbital overlaps. In addition, the difference in their packing motifs leads to strikingly different band structures that give rise to contrasting charge-transport capabilities. More specifically, Cy6-BQQDI bearing bulky substituents exhibits isotropic intermolecular orbital overlaps resulting in equal averaged transfer integrals in both π-π stacking directions, even when dynamic disorders are taken into account; whereas Ph-BQQDI exhibits anisotropic averaged transfer integrals in these directions. As a result, Cy6-BQQDI shows excellent device performances in both single-crystalline and polycrystalline thin-film organic field-effect transistors up to 2.3 and 1.0 cm2 V-1 s-1, respectively.
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10
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Lenz J, Seiler AM, Geisenhof FR, Winterer F, Watanabe K, Taniguchi T, Weitz RT. High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length. NANO LETTERS 2021; 21:4430-4436. [PMID: 33956451 DOI: 10.1021/acs.nanolett.1c01144] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Miniaturization of electronic circuits increases their overall performance. So far, electronics based on organic semiconductors has not played an important role in the miniaturization race. Here, we show the fabrication of liquid electrolyte gated vertical organic field effect transistors with channel lengths down to 2.4 nm. These ultrashort channel lengths are enabled by using insulating hexagonal boron nitride with atomically precise thickness and flatness as a spacer separating the vertically aligned source and drain electrodes. The transistors reveal promising electrical characteristics with output current densities of up to 2.95 MA cm-2 at -0.4 V bias, on-off ratios of up to 106, a steep subthreshold swing of down to 65 mV dec-1 and a transconductance of up to 714 S m-1. Realizing channel lengths in the sub-5 nm regime and operation voltages down to 100 μV proves the potential of organic semiconductors for future highly integrated or low power electronics.
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Affiliation(s)
- Jakob Lenz
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Munich 80799, Germany
| | - Anna Monika Seiler
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Munich 80799, Germany
- 1st Institute of Physics, Faculty of Physics, Georg-August-University, Göttingen 37077, Germany
| | - Fabian Rudolf Geisenhof
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Munich 80799, Germany
| | - Felix Winterer
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Munich 80799, Germany
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Ralf Thomas Weitz
- AG Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians-University, Munich, Munich 80799, Germany
- 1st Institute of Physics, Faculty of Physics, Georg-August-University, Göttingen 37077, Germany
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11
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Postnikov VA, Kulishov AA, Lyasnikova MS, Ostrovskaya AA, Stepko AS, Lebedev-Stepanov PV. Growth from Solutions and Surface Properties of Anthracene Crystals. CRYSTALLOGR REP+ 2021. [DOI: 10.1134/s1063774521030196] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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12
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Kumagai S, Yu CP, Nakano S, Annaka T, Mitani M, Yano M, Ishii H, Takeya J, Okamoto T. Role of Perfluorophenyl Group in the Side Chain of Small-Molecule n-Type Organic Semiconductors in Stress Stability of Single-Crystal Transistors. J Phys Chem Lett 2021; 12:2095-2101. [PMID: 33625238 DOI: 10.1021/acs.jpclett.0c03012] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Operational stability, such as long-term ambient durability and bias stress stability, is one of the most significant parameters in organic thin-film transistors (OTFTs). The understanding of such stabilities has been mainly devoted to energy levels of frontier orbitals, thin-film morphologies, and device configuration involving gate dielectrics and electrodes, whereas the roles of molecular and aggregated structural features in device stability are seldom discussed. In this Letter, we report a remarkable enhancement of operational stability, especially bias stress, of n-channel single-crystal OTFTs derived from a replacement of phenyl with perfluorophenyl groups in the side chain. Because of the several-molecule-thick single-crystal nature employed for the OTFTs, the crystal-surface properties are thought to be critical, where the surface structure composed of perfluorophenyl moieties could suppress interactions between environmental species and field-induced carriers owing to increased hydrophobicity and steric protection of π-conjugated units.
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Affiliation(s)
- Shohei Kumagai
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Craig P Yu
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Shunsuke Nakano
- Chemistry, Materials and Bioengineering Major, Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
| | - Tatsuro Annaka
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Masato Mitani
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Masafumi Yano
- Chemistry, Materials and Bioengineering Major, Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
| | - Hiroyuki Ishii
- Department of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- National Institute of Advanced Industrial Science and Technology (AIST)-University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- MANA, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 205-0044, Japan
| | - Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- National Institute of Advanced Industrial Science and Technology (AIST)-University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
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13
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Yang Q, Yang H, Lv D, Yu R, Li E, He L, Chen Q, Chen H, Guo T. High-Performance Organic Synaptic Transistors with an Ultrathin Active Layer for Neuromorphic Computing. ACS APPLIED MATERIALS & INTERFACES 2021; 13:8672-8681. [PMID: 33565852 DOI: 10.1021/acsami.0c22271] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages of low dimension, simultaneous read-write operation and high efficiency. However, process compatibility and repeatability of these materials are still a big challenge, as well as other issues such as complex transfer process and material selectivity. In this work, synaptic transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple dip-coating process, which exhibited a high current switch ratio up to 106, well off state as low as nearly 10-12 A, and low operation voltage of -3 V. Moreover, various synaptic behaviors were successfully simulated including excitatory postsynaptic current, paired pulse facilitation, long-term potentiation, and long-term depression. More importantly, under ultrathin conditions, excellent memory preservation, and linearity of weight update were obtained because of the enhanced effect of defects and improved controllability of the gate voltage on the ultrathin active layer, which led to a pattern recognition rate up to 85%. This is the first work to demonstrate that the pattern recognition rate, a crucial parameter for neuromorphic computing can be significantly improved by reducing the thickness of the channel layer. Hence, these results not only reveal a simple and effective way to improve plasticity and memory retention of the artificial synapse via thickness modulation but also expand the material selection for the 2D artificial synaptic devices.
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Affiliation(s)
- Qian Yang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Zhicheng College, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Huihuang Yang
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Dongxu Lv
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Rengjian Yu
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Enlong Li
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Lihua He
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Qizhen Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
| | - Huipeng Chen
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
| | - Tailiang Guo
- Institute of Optoelectronic Display, National & Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350100, China
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14
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Wang L, Liu J. Engineered drug-loaded cells and cell derivatives as a delivery platform for cancer immunotherapy. Biomater Sci 2021; 9:1104-1116. [DOI: 10.1039/d0bm01676d] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Recent advances in improving cancer immunotherapy have been summarized with a focus on using functionalized intact cells and cell derivatives.
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Affiliation(s)
- Lu Wang
- Shanghai Key Laboratory for Nucleic Acid Chemistry and Nanomedicine
- Institute of Molecular Medicine
- State Key Laboratory of Oncogenes and Related Genes
- Shanghai Cancer Institute
- Renji Hospital
| | - Jinyao Liu
- Shanghai Key Laboratory for Nucleic Acid Chemistry and Nanomedicine
- Institute of Molecular Medicine
- State Key Laboratory of Oncogenes and Related Genes
- Shanghai Cancer Institute
- Renji Hospital
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15
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Song I, Ahn J, Shang X, Oh JH. Optoelectronic Property Modulation in Chiral Organic Semiconductor/Polymer Blends. ACS APPLIED MATERIALS & INTERFACES 2020; 12:49926-49934. [PMID: 33092342 DOI: 10.1021/acsami.0c17211] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Organic phototransistors (OPTs) have been widely used in biomedical sensing, optical communications, and imaging. Charge-trapping effect has been utilized as an effective strategy for enhancing their photoresponsivity by effectively decreasing the dark current. The combination of organic semiconductors (OSCs), especially chiral OSCs, with insulating polymers has rarely been carried out for optoelectronic applications. Here, we fabricated OPTs containing both enantiopure and racemic air-stable n-type perylene diimide derivatives, CPDI-CN2-C6, and insulating biopolymer polylactide (PLA) and evaluated their photoresponsive properties. The PLA-blended systems exhibited greatly enhanced optoelectronic performances owing to the intense charge-trapping effect. Interestingly, the racemic system showed 3 times higher electron mobility and 12 times higher specific detectivity (1.3 × 1013 jones) compared with the enantiopure systems due to the more aggregated morphologies and larger grains, indicating that chiral composition can be used as a tuning parameter in optoelectronic devices. Our systematic study provides a feasible and effective method for producing high-performance n-type OPTs under ambient conditions.
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Affiliation(s)
- Inho Song
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Jaeyong Ahn
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
| | - Xiaobo Shang
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
- Chemistry Research Laboratory, Department of Chemistry, University of Oxford, Mansfield Road, Oxford OX1 3TA, U.K
| | - Joon Hak Oh
- School of Chemical and Biological Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Republic of Korea
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16
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Sawada T, Yamamura A, Sasaki M, Takahira K, Okamoto T, Watanabe S, Takeya J. Correlation between the static and dynamic responses of organic single-crystal field-effect transistors. Nat Commun 2020; 11:4839. [PMID: 32973198 PMCID: PMC7519035 DOI: 10.1038/s41467-020-18616-0] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/11/2020] [Accepted: 08/21/2020] [Indexed: 11/09/2022] Open
Abstract
Transistors, the most important logic elements, are maintained under dynamic influence during circuit operations. Practically, circuit design protocols and frequency responsibility should stem from a perfect agreement between the static and dynamic properties. However, despite remarkable improvements in mobility for organic semiconductors, the correlation between the device performances achieved under static and dynamic circumstances is controversial. Particularly in the case of organic semiconductors, it remains unclear whether parasitic elements that relate to their unique molecular aggregates may violate the radiofrequency circuit model. Thus, we herein report the manufacture of micrometre-scale transistor arrays composed of solution-processed organic semiconductors, which achieve near very high-frequency band operations. Systematic investigations into the device geometrical factors revealed that the radiofrequency circuit model established on a solid-state continuous medium is extendable to organic single-crystal field-effect transistors. The validity of this radiofrequency circuit model allows a reliable prediction of the performances of organic radiofrequency devices.
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Affiliation(s)
- Taiki Sawada
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan
| | - Akifumi Yamamura
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan
| | - Mari Sasaki
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan
| | - Kayo Takahira
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan
| | - Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.,AIST-Utokyo Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.,JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan
| | - Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan. .,AIST-Utokyo Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan.
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Material Science, Graduate School of Frontier Science, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan. .,AIST-Utokyo Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), National Institute of Advanced Industrial Science and Technology (AIST), 5-1-5 Kashiwanoha, Kashiwa, Chiba, 277-8561, Japan. .,International Centre for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, 205-0044, Japan.
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17
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Okamoto T, Mitani M, Yu CP, Mitsui C, Yamagishi M, Ishii H, Watanabe G, Kumagai S, Hashizume D, Tanaka S, Yano M, Kushida T, Sato H, Sugimoto K, Kato T, Takeya J. Alkyl-Substituted Selenium-Bridged V-Shaped Organic Semiconductors Exhibiting High Hole Mobility and Unusual Aggregation Behavior. J Am Chem Soc 2020; 142:14974-14984. [PMID: 32812421 DOI: 10.1021/jacs.0c05522] [Citation(s) in RCA: 12] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Toward the development of high-performance organic semiconductors (OSCs), carrier mobility is the most important requirement for next-generation OSC-based electronics. The strategy is that OSCs consisting of a highly extended π-electron core exhibit two-dimensional (2D) aggregated structures to offer effective charge transport. However, such OSCs, in general, show poor solubility in common organic solvents, resulting in limited solution processability. This is a critical trade-off between the development of OSCs with simultaneous high carrier mobility and suitable solubility. To address this issue, herein, five-membered ring-fused selenium-bridged V-shaped binaphthalene with decyl substituents (C10-DNS-VW) is developed and synthesized by an efficient method. C10-DNS-VW exhibits significantly high solubility for solution processes. Notably, C10-DNS-VW forms a one-dimensional π-stacked packing motif (1D motif) and a 2D herringbone (HB) packing motif (2D motif), depending on the crystal growth condition. On the other hand, the fabrication of thin films by means of both solution process and vacuum deposition techniques forms only the 2D HB motif. External stress tests such as heating and exposure to solvent vapor indicated that 1D and 2D motifs could be synergistically induced by the total balance of intermolecular interactions. Finally, the single-crystalline films of C10-DNS-VW by solution process exhibit carrier mobility up to 11 cm2 V-1 s-1 with suitable transistor stability under ambient conditions for more than two months, indicating that C10-DNS-VW is one of the most promising candidates for breaking the trade-off in the field of solution-processed technologies.
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Affiliation(s)
- Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.,National Institute of Advanced Industrial Science and Technology (AIST)-University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.,PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Masato Mitani
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Craig P Yu
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Chikahiko Mitsui
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Masakazu Yamagishi
- National Institute of Technology, Toyama College, 13 Hongo-machi, Toyama, Toyama 939-8630, Japan
| | - Hiroyuki Ishii
- Department of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Go Watanabe
- Department of Physics, School of Science, Kitasato University, 1-15-1 Kitasato, Minami-ku, Sagamihara, Kanagawa 252-0373, Japan
| | - Shohei Kumagai
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Daisuke Hashizume
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
| | - Shota Tanaka
- Chemistry, Materials and Bioengineering Major, Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
| | - Masafumi Yano
- Chemistry, Materials and Bioengineering Major, Graduate School of Science and Engineering, Kansai University, 3-3-35 Yamate-cho, Suita, Osaka 564-8680, Japan
| | - Tomokatsu Kushida
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Hiroyasu Sato
- Rigaku Corp., 3-9-12 Matsubara-cho, Akishima, Tokyo 196-8666, Japan
| | - Kunihisa Sugimoto
- Diffraction & Scattering Division, Japan Synchrotron Radiation Research Institute, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan.,Institute for Integrated Cell-Material Sciences (iCeMS), Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501, Japan
| | - Takashi Kato
- Department of Chemistry and Biotechnology, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.,National Institute of Advanced Industrial Science and Technology (AIST)-University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.,International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 205-0044, Japan
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18
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Gebers J, Özen B, Hartmann L, Schaer M, Suàrez S, Bugnon P, Scopelliti R, Steinrück H, Konovalov O, Magerl A, Brinkmann M, Petraglia R, Silva P, Corminboeuf C, Frauenrath H. Crystallization and Organic Field‐Effect Transistor Performance of a Hydrogen‐Bonded Quaterthiophene. Chemistry 2020; 26:10265-10275. [DOI: 10.1002/chem.201904562] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/05/2019] [Revised: 04/23/2020] [Indexed: 11/11/2022]
Affiliation(s)
- Jan Gebers
- Institute of Materials École Polytechnique Fédérale de Lausanne (EPFL), EPFL-STI-IMX-LMOM, MXG 135 Station 12 1015 Lausanne Switzerland
| | - Bilal Özen
- Institute of Materials École Polytechnique Fédérale de Lausanne (EPFL), EPFL-STI-IMX-LMOM, MXG 135 Station 12 1015 Lausanne Switzerland
| | - Lucia Hartmann
- Institute of Materials École Polytechnique Fédérale de Lausanne (EPFL), EPFL-STI-IMX-LMOM, MXG 135 Station 12 1015 Lausanne Switzerland
| | - Michel Schaer
- Institute of Materials École Polytechnique Fédérale de Lausanne (EPFL), EPFL-STI-IMX-LMOM, MXG 135 Station 12 1015 Lausanne Switzerland
| | - Stéphane Suàrez
- Institute of Materials École Polytechnique Fédérale de Lausanne (EPFL), EPFL-STI-IMX-LMOM, MXG 135 Station 12 1015 Lausanne Switzerland
| | - Philippe Bugnon
- Institute of Condensed Matter Physics École Polytechnique Fédérale de Lausanne (EPFL), EPFL-PH J0 491 Station 3 1015 Lausanne Switzerland
| | - Rosario Scopelliti
- Institute of Chemical Sciences and Engineering École Polytechnique Fédérale de Lausanne (EPFL), EPFL-BCH 2111, Batochime UNIL Avenue Forel 2 1015 Lausanne Switzerland
| | - Hans‐Georg Steinrück
- Crystallography and Structural Physics University of Erlangen-Nürnberg Staudtstrasse 3 91058 Erlangen Germany
- Present address: Department Chemie Universität Paderborn Warburger Strasse 100 33098 Paderborn Germany
| | - Oleg Konovalov
- European Synchrotron Radiation Facility (ESRF) 6 rue Jules Horowitz, BP220 38043 Grenoble Cedex France
| | - Andreas Magerl
- Crystallography and Structural Physics University of Erlangen-Nürnberg Staudtstrasse 3 91058 Erlangen Germany
| | - Martin Brinkmann
- Institut Charles Sadron CNRS Université de Strasbourg Rue du Loess 23 67034 Strasbourg France
| | - Riccardo Petraglia
- Institute of Chemical Sciences and Engineering École Polytechnique Fédérale de Lausanne (EPFL), EPFL-BCH 5312, Batochime UNIL Avenue Forel 2 1015 Lausanne Switzerland
| | - Piotr Silva
- Institute of Chemical Sciences and Engineering École Polytechnique Fédérale de Lausanne (EPFL), EPFL-BCH 5312, Batochime UNIL Avenue Forel 2 1015 Lausanne Switzerland
- present address: Department of Energy Conversion and Storage Technical University of Denmark Anker Engelunds Vej 301 2800 Kongens Lyngby Denmark
| | - Clémence Corminboeuf
- Institute of Chemical Sciences and Engineering École Polytechnique Fédérale de Lausanne (EPFL), EPFL-BCH 5312, Batochime UNIL Avenue Forel 2 1015 Lausanne Switzerland
| | - Holger Frauenrath
- Institute of Materials École Polytechnique Fédérale de Lausanne (EPFL), EPFL-STI-IMX-LMOM, MXG 135 Station 12 1015 Lausanne Switzerland
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19
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Zhang X, Kang Y, Wang J, Yan J, Chen Q, Cheng H, Huang P, Gu Z. Engineered PD-L1-Expressing Platelets Reverse New-Onset Type 1 Diabetes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1907692. [PMID: 32449212 DOI: 10.1002/adma.201907692] [Citation(s) in RCA: 43] [Impact Index Per Article: 10.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2019] [Revised: 03/19/2020] [Accepted: 04/13/2020] [Indexed: 05/27/2023]
Abstract
The pathogenesis of Type 1 diabetes (T1D) arises from the destruction of insulin-producing β-cells by islet-specific autoreactive T cells. Inhibition of islet-specific autoreactive T cells to rescue β-cells is a promising approach to treat new-onset T1D. The immune checkpoint signal axis programmed death-1/programmed death-ligand 1 (PD-1/PD-L1) can effectively regulate the activity of T cells and prevent autoimmune attack. Here, megakaryocyte progenitor cells are genetically engineered to overexpress PD-L1 to produce immunosuppressive platelets. The PD-L1-overexpressing platelets (designated PD-L1 platelets) accumulate in the inflamed pancreas and may suppress the activity of pancreas autoreactive T cells in newly hyperglycemic non-obese diabetic (NOD) mice, protecting the insulin-producing β-cells from destruction. Moreover, PD-L1 platelet treatment also increases the percentage of the regulatory T cells (Tregs) and maintains immune tolerance in the pancreas. It is demonstrated that the rescue of β-cells by PD-L1 platelets can effectively maintain normoglycemia and reverse diabetes in newly hyperglycemic NOD mice.
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Affiliation(s)
- Xudong Zhang
- Department of Bioengineering, University of California, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Yang Kang
- Department of Bioengineering, University of California, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Jinqiang Wang
- Department of Bioengineering, University of California, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
| | - Junjie Yan
- Joint Department of Biomedical Engineering, University of North Carolina at Chapel Hill and North Carolina State University, Raleigh, NC, 27695, USA
| | - Qian Chen
- Department of Bioengineering, University of California, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, 215123, P. R. China
| | - Hao Cheng
- Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19104, USA
| | - Peng Huang
- Guangdong Key Laboratory for Biomedical Measurements and Ultrasound Imaging School of Biomedical Engineering, Health Science Center, Shenzhen University, Shenzhen, 518060, China
| | - Zhen Gu
- Department of Bioengineering, University of California, Los Angeles, CA, 90095, USA
- California NanoSystems Institute, University of California, Los Angeles, CA, 90095, USA
- Jonsson Comprehensive Cancer Center, University of California, Los Angeles, CA, 90095, USA
- Center for Minimally Invasive Therapeutics, University of California, Los Angeles, CA, 90095, USA
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20
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Wu H, Iino H, Hanna JI. Scalable Ultrahigh-Speed Fabrication of Uniform Polycrystalline Thin Films for Organic Transistors. ACS APPLIED MATERIALS & INTERFACES 2020; 12:29497-29504. [PMID: 32436375 DOI: 10.1021/acsami.0c05105] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The fabrication of organic semiconductor thin films by printing technologies is expected to enable the low-cost production of devices such as flexible display drivers, RF-ID tags, and various chemical/biological sensors. However, large-scale high-speed fabrication of uniform semiconductor thin films with adequate electrical properties for these devices remains a big challenge. Herein, we demonstrate an ultrafast and scalable fabrication of uniform polycrystalline thin films with 100% surface coverage using liquid crystalline semiconductors such as 2-phenyl-7-decyl[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) and 2.7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT-C8), at a rate of 3 orders of magnitude higher than before, i.e., 40 mm/s (2.4 m/min) or more by dip-coating in the drainage regime. Organic transistors fabricated with polycrystalline thin films of Ph-BTBT-10 show average mobilities of 4.13 ± 0.75 cm2/(V s) in the bottom-gate-bottom-contact configuration and 10.90 ± 2.40 cm2/(V s) in the bottom-gate-top-contact configuration comparable to those of the devices prepared with single-crystalline thin films. More importantly, these films almost maintain the FET performance when the substrate size is extended up to 4 square inch. The present findings are available for other liquid crystalline semiconductors and bring us one step closer to the realization of printed electronics.
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Affiliation(s)
- Hao Wu
- Imaging Science and Engineering Research Center, Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
| | - Hiroaki Iino
- Imaging Science and Engineering Research Center, Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
| | - Jun-Ichi Hanna
- Imaging Science and Engineering Research Center, Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology, J1-2, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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21
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Wang C, Fu B, Zhang X, Li R, Dong H, Hu W. Solution-Processed, Large-Area, Two-Dimensional Crystals of Organic Semiconductors for Field-Effect Transistors and Phototransistors. ACS CENTRAL SCIENCE 2020; 6:636-652. [PMID: 32490182 PMCID: PMC7256937 DOI: 10.1021/acscentsci.0c00251] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/01/2020] [Indexed: 06/11/2023]
Abstract
Organic electronics with π-conjugated organic semiconductors are promising candidates for the next electronics revolution. For the conductive channel, the large-area two-dimensional (2D) crystals of organic semiconductors (2DCOS) serve as useful scaffolds for modern organic electronics, benefiting not only from long-range order and low defect density nature but also from unique charge transport characteristic and photoelectrical properties. Meanwhile, the solution process with advantages of cost-effectiveness and room temperature compatibility is the foundation of high-throughput print electrical devices. Herein, we will give an insightful overview to witness the huge advances in 2DCOS over the past decade. First, the typical influencing factors and state-of-the-art assembly strategies of the solution-process for large-area 2DCOS over sub-millimeter even to wafer size are discussed accompanying rational evaluation. Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p-n junction devices and planar integrated circuits based on 2DCOS are also emphasized. Furthermore, the burgeoning phototransistors (OPTs) based on crystals in the 2D limits are elaborated. Next, we emphasized the unique and enhanced photoelectrical properties based on a hybrid system with other 2D van der Waals solids. Finally, frontier insights and opportunities are proposed, promoting further research in this field.
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Affiliation(s)
- Cong Wang
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Beibei Fu
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Xiaotao Zhang
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Rongjin Li
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
| | - Huanli Dong
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory of Organic
Solids, Institute of Chemistry, Chinese
Academy of Sciences, Beijing 100190, China
| | - Wenping Hu
- Tianjin
Key Laboratory of Molecular Optoelectronic Sciences, Department of
Chemistry, School of Science, Tianjin University
and Collaborative Innovation Center of Chemical Science and Engineering
(Tianjin), Tianjin 300072, China
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22
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Okamoto T, Kumagai S, Fukuzaki E, Ishii H, Watanabe G, Niitsu N, Annaka T, Yamagishi M, Tani Y, Sugiura H, Watanabe T, Watanabe S, Takeya J. Robust, high-performance n-type organic semiconductors. SCIENCE ADVANCES 2020; 6:eaaz0632. [PMID: 32494668 PMCID: PMC7195148 DOI: 10.1126/sciadv.aaz0632] [Citation(s) in RCA: 72] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2019] [Accepted: 02/07/2020] [Indexed: 05/03/2023]
Abstract
Organic semiconductors (OSCs) are important active materials for the fabrication of next-generation organic-based electronics. However, the development of n-type OSCs lags behind that of p-type OSCs in terms of charge-carrier mobility and environmental stability. This is due to the absence of molecular designs that satisfy the requirements. The present study describes the design and synthesis of n-type OSCs based on challenging molecular features involving a π-electron core containing electronegative N atoms and substituents. The unique π-electron system simultaneously reinforces both electronic and structural interactions. The current n-type OSCs exhibit high electron mobilities with high reliability, atmospheric stability, and robustness against environmental and heat stresses and are superior to other existing n-type OSCs. This molecular design represents a rational strategy for the development of high-end organic-based electronics.
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Affiliation(s)
- Toshihiro Okamoto
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- National Institute of Advanced Industrial Science and Technology (AIST)–University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Shohei Kumagai
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Eiji Fukuzaki
- Fujifilm Corp., 577 Ushijima, Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Hiroyuki Ishii
- Department of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
| | - Go Watanabe
- Department of Physics, School of Science, Kitasato University, 1-15-1 Kitasato, Minami-ku, Sagamihara, Kanagawa 252-0373, Japan
| | - Naoyuki Niitsu
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Tatsuro Annaka
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
| | - Masakazu Yamagishi
- Department of Applied Chemistry and Chemical Engineering, National Institute of Technology, Toyama College, 13 Hongo-machi, Toyama City, Toyama 939-8630, Japan
| | - Yukio Tani
- Fujifilm Corp., 577 Ushijima, Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Hiroki Sugiura
- Fujifilm Corp., 577 Ushijima, Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Tetsuya Watanabe
- Fujifilm Corp., 577 Ushijima, Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8577, Japan
| | - Shun Watanabe
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- National Institute of Advanced Industrial Science and Technology (AIST)–University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
| | - Jun Takeya
- Material Innovation Research Center (MIRC) and Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- National Institute of Advanced Industrial Science and Technology (AIST)–University of Tokyo Advanced Operando-Measurement Technology Open Innovation Laboratory (OPERANDO-OIL), AIST, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan
- MANA, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba 205-0044, Japan
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23
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Zhang C, Wang X, Ai Z, Cao M, Yan Y, Zhao Y, Liu Y, Wei D. Strain-Sensitive Fluorescence from Two-Dimensional Organic Crystal. J Phys Chem Lett 2020; 11:1909-1914. [PMID: 32069415 DOI: 10.1021/acs.jpclett.0c00002] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Strain-sensitive fluorescence materials have great potential in sensing applications owing to their low cost, intuitive signal, and user friendliness. Organic crystals are one of the most developed fluorescence materials. However, modulation of the fluorescence by strain is still a challenge. Here, for the first time, we investigate the strain-sensitive fluorescence of the two-dimensional (2D) organic crystal. Without interlayer interactions, the molecular arrangement in a 2D crystal can be easily tuned, which results in photoluminescence transformation between monomer emission and excimer emission. The 2D organic crystal has higher sensitivity under strain, compared with bulk organic crystals, showing great potential in practical applications such as tactile monitors, chameleon bionic skin, and visible leakage alarms.
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Affiliation(s)
- Cong Zhang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
| | - Xuejun Wang
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
| | - Zhaolin Ai
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
| | - Min Cao
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
| | - Yongkun Yan
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
| | - Yan Zhao
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
| | - Yunqi Liu
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
| | - Dacheng Wei
- State Key Laboratory of Molecular Engineering of Polymers, Department of Macromolecular Science, Fudan University, Shanghai 200433, China
- Institute of Molecular Materials and Devices, Department of Material Science, Fudan University, Shanghai 200433, China
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24
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Schweicher G, Garbay G, Jouclas R, Vibert F, Devaux F, Geerts YH. Molecular Semiconductors for Logic Operations: Dead-End or Bright Future? ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1905909. [PMID: 31965662 DOI: 10.1002/adma.201905909] [Citation(s) in RCA: 57] [Impact Index Per Article: 14.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2019] [Revised: 11/18/2019] [Indexed: 05/26/2023]
Abstract
The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V-1 s-1 . However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.
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Affiliation(s)
- Guillaume Schweicher
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
- Optoelectronics Group, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK
| | - Guillaume Garbay
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Rémy Jouclas
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - François Vibert
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Félix Devaux
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
| | - Yves H Geerts
- Laboratoire de chimie des polymères, Faculté des Sciences, Université Libre de Bruxelles (ULB) Boulevard du Triomphe, Brussels, 1050, Belgium
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25
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Dong D, Li Q, Hou W, Zhang H. Synthesis, nonlinear optical, magnetic and electrical properties of ultra-stable open-shell pancake bonding linked perylene diimide anion radicals π-oligomer. J Mol Struct 2020. [DOI: 10.1016/j.molstruc.2019.127002] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/01/2023]
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26
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Lenjani SV, Zerson M, Wang Q, Sommer M, Magerle R. Liquid-Crystalline Order and Film Thickness Determine the Semicrystalline Morphology in Diketopyrrolopyrrole-Based Copolymers. ACS Macro Lett 2019; 8:1611-1616. [PMID: 35619397 DOI: 10.1021/acsmacrolett.9b00722] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Lyotropic liquid crystalline (LC) phases offer a means of controlling molecular order and orientation in thin films of conjugated polymers. Surface energy, surface-induced ordering, and film thickness are additional factors determining the molecular order in thin films. Through solvent vapor annealing and in situ atomic force microscopy in the swollen state, we show that in ultrathin films of a poly(dithiazolyldiketopyrrolopyrrole-tetrafluorobenzene) (PTzDPPTzF4) alternating copolymer stacks of monomolecular-thick layers with a 2.1 nm step height form, which resemble a lyotropic smectic LC phase. Within the smectic layers, the polymer backbones are aligned parallel to the film plane, with edge-on oriented diketopyrrolopyrrole (DPP) cores. Thicker films resemble a semicrystalline morphology with lamellae consisting of blocks. Such lamellae are typical for polymers crystallizing via Strobl's block-forming model. Our findings indicate that molecular order, molecular orientation, and the morphology of PTzDPPTzF4 copolymer films are tunable by LC order and by varying the film thickness according to the desired application of the particular organic electronic devices.
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Affiliation(s)
- Shayan Vazirieh Lenjani
- Chemische Physik, Institut für Physik, Technische Universität Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
| | - Mario Zerson
- Chemische Physik, Institut für Physik, Technische Universität Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
| | - Qian Wang
- Polymerchemie, Institut für Chemie, Technische Universität Chemnitz, Straße der Nationen 62, 09111 Chemnitz, Germany
| | - Michael Sommer
- Polymerchemie, Institut für Chemie, Technische Universität Chemnitz, Straße der Nationen 62, 09111 Chemnitz, Germany
| | - Robert Magerle
- Chemische Physik, Institut für Physik, Technische Universität Chemnitz, Reichenhainerstr. 70, 09126 Chemnitz, Germany
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27
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Scalable Fabrication of Organic Single-Crystalline Wafers for Reproducible TFT Arrays. Sci Rep 2019; 9:15897. [PMID: 31685835 PMCID: PMC6828694 DOI: 10.1038/s41598-019-50294-x] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/06/2019] [Accepted: 09/05/2019] [Indexed: 11/09/2022] Open
Abstract
Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate the reliable mass manufacture of integrated circuits with reasonable areal coverage, and to what extent mass production of solution-processed electronic devices would allow substantial reductions in manufacturing costs, remain controversial. In the present study, we successfully manufactured a 4-inch (c.a. 100 mm) organic single-crystalline wafer via a simple, one-shot printing technique, on which 1,600 organic transistors were integrated and characterized. Owing to their single-crystalline nature, we were able to verify remarkably high reliability and reproducibility, with mobilities up to 10 cm2 V−1 s−1, a near-zero turn-on voltage, and excellent on-off ratio of approximately 107. This work provides a critical milestone in printed electronics, enabling industry-level manufacturing of OSC devices concomitantly with lowered manufacturing costs.
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28
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Schaffroth LS, Lenz J, Giegold V, Kögl M, Hartschuh A, Weitz RT. Freely Suspended, van der Waals Bound Organic Nanometer-Thin Functional Films: Mechanical and Electronic Characterization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2019; 31:e1808309. [PMID: 30828880 DOI: 10.1002/adma.201808309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2018] [Revised: 02/05/2019] [Indexed: 06/09/2023]
Abstract
Determining the electronic properties of nanoscopic, low-dimensional materials free of external influences is key to the discovery and understanding of new physical phenomena. An example is the suspension of graphene, which has allowed access to their intrinsic charge transport properties. Furthermore, suspending thin films enables their application as membranes, sensors, or resonators, as has been explored extensively. While the suspension of covalently bound, electronically active thin films is well established, semiconducting thin films composed of functional molecules only held together by van der Waals interactions could only be studied supported by a substrate. In the present work, it is shown that by utilizing a surface-crystallization method, electron conductive films with thicknesses of down to 6 nm and planar chiral optical activity can be freely suspended across several hundreds of nanometers. The suspended membranes exhibit a Young's modulus of 2-13 GPa and are electronically decoupled from the environment, as established by temperature-dependent field-effect transistor measurements.
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Affiliation(s)
- Lilian S Schaffroth
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstraße 54, 80799, Munich, Germany
| | - Jakob Lenz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstraße 54, 80799, Munich, Germany
| | - Veit Giegold
- Department of Chemistry, Butenandtstr. 5-13, 81377, Munich, Germany
| | - Maximilian Kögl
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstraße 54, 80799, Munich, Germany
| | - Achim Hartschuh
- Department of Chemistry, Butenandtstr. 5-13, 81377, Munich, Germany
- Center for Nanoscience (CeNS), Schellingstraße 4, 80799, Munich, Germany
- Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799, Munich, Germany
| | - R Thomas Weitz
- Physics of Nanosystems, Department of Physics, Ludwig-Maximilians-Universität München, Amalienstraße 54, 80799, Munich, Germany
- Center for Nanoscience (CeNS), Schellingstraße 4, 80799, Munich, Germany
- Nanosystems Initiative Munich (NIM), Schellingstraße 4, 80799, Munich, Germany
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29
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Enhanced photoelectrical response of thermodynamically epitaxial organic crystals at the two-dimensional limit. Nat Commun 2019; 10:756. [PMID: 30765699 PMCID: PMC6375977 DOI: 10.1038/s41467-019-08573-8] [Citation(s) in RCA: 36] [Impact Index Per Article: 7.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2018] [Accepted: 01/11/2019] [Indexed: 11/15/2022] Open
Abstract
Owing to strong light-matter interaction, two-dimensional (2D) organic crystal is regarded as promising materials for ultrasensitive photodetectors, however it still received limited success due to degraded photoelectrical response and problems in controllable growth. Here, we find the growth of 2D organic crystal obeys Gibbs-Curie-Wulff law, and develop a seed-epitaxial drop-casting method to grow millimeter-sized 1,4-bis(4-methylstyryl)benzene 2D crystals on SiO2/Si in a thermodynamically controlled process. On SiO2/Si, a distinct 2D limit effect is observed, which remarkably enhances internal photoresponsivity compared with bulk crystals. Experiment and calculation show the molecules stack more compactly at the 2D limit, thus better molecular orbital overlap and corresponding changes in the band structure lead to efficient separation and transfer of photo-generated carriers as well as enhanced photo-gating modulation. This work provides a general insight into the growth and the dimension effect of the 2D organic crystal, which is valuable for the application in high-performance photoelectrical devices. To realize efficient optoelectronic devices based on two-dimensional (2D) organic crystals, optimizing the photoelectrical response and growth of these materials at the 2D limit is vital. Here, the authors report enhanced internal photoresponse in large-area 2D crystals using a novel growth method.
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30
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Bruevich VV, Glushkova AV, Poimanova OY, Fedorenko RS, Luponosov YN, Bakirov AV, Shcherbina MA, Chvalun SN, Sosorev AY, Grodd L, Grigorian S, Ponomarenko SA, Paraschuk DY. Large-Size Single-Crystal Oligothiophene-Based Monolayers for Field-Effect Transistors. ACS APPLIED MATERIALS & INTERFACES 2019; 11:6315-6324. [PMID: 30663300 DOI: 10.1021/acsami.8b20700] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
High structural quality of crystalline organic semiconductors is the basis of their superior electrical performance. Recent progress in quasi two-dimensional (2D) organic semiconductor films challenges bulk single crystals because both demonstrate competing charge-carrier mobilities. As the thinnest molecular semiconductors, monolayers offer numerous advantages such as unmatched flexibility and light transparency as well they are an excellent platform for sensing. Oligothiophene-based materials are among the most promising ones for light-emitting applications because of the combination of efficient luminescence and decent charge-carrier mobility. Here, we demonstrate single-crystal monolayers of unprecedented structural order grown from four alkyl-substituted thiophene and thiophene-phenylene oligomers. The monolayer crystals with lateral dimensions up to 3 mm were grown from the solution on substrates with various surface energies and roughness by drop or spin-casting with subsequent slow solvent evaporation. Our data indicate that 2D crystallization resulting in single-crystal monolayers occurs at the receding gas-solution-substrate contact line. The structural properties of the monolayers were studied by grazing-incidence X-ray diffraction/reflectivity, atomic force and differential interference contrast microscopies, and imaging spectroscopic ellipsometry. These highly ordered monolayers demonstrated an excellent performance in organic field-effect transistors approaching the best values reported for the thiophene or thiophene-phenylene oligomers. Our findings pave the way for efficient monolayer organic electronics highlighting the high potential of simple solution-processing techniques for the growth of large-size single-crystal monolayers with excellent structural order and electrical performance competing against bulk single crystals.
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Affiliation(s)
- Vladimir V Bruevich
- Faculty of Physics & International Laser Centre of Lomonosov Moscow State University , Leninskiye gory 1/62 , 119991 Moscow , Russia
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
- Institute of Spectroscopy of Russian Academy of Sciences , Fizicheskaya Str., 5 , Troitsk, 108840 Moscow , Russia
| | - Anastasia V Glushkova
- Faculty of Physics & International Laser Centre of Lomonosov Moscow State University , Leninskiye gory 1/62 , 119991 Moscow , Russia
| | - Olena Yu Poimanova
- Department of Chemistry of Donetsk National University , Universitetskaya Str. 24 , 83001 Donetsk , Ukraine
| | - Roman S Fedorenko
- Faculty of Physics & International Laser Centre of Lomonosov Moscow State University , Leninskiye gory 1/62 , 119991 Moscow , Russia
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
| | - Yuriy N Luponosov
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
- Chemistry Department , Lomonosov Moscow State University , Leninskiye gory 1/3 , 119991 Moscow , Russia
| | - Artem V Bakirov
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
- National Research Center "Kurchatov Institute" , 1 pl. Akademika Kurchatova , 123182 Moscow , Russia
| | - Maxim A Shcherbina
- Moscow Institute of Physics and Technology , 4 Institutsky line , 141700 Dolgoprudny , Moscow Region , Russian Federation
- National Research Center "Kurchatov Institute" , 1 pl. Akademika Kurchatova , 123182 Moscow , Russia
| | - Sergei N Chvalun
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
- National Research Center "Kurchatov Institute" , 1 pl. Akademika Kurchatova , 123182 Moscow , Russia
| | - Andrey Yu Sosorev
- Faculty of Physics & International Laser Centre of Lomonosov Moscow State University , Leninskiye gory 1/62 , 119991 Moscow , Russia
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
- Institute of Spectroscopy of Russian Academy of Sciences , Fizicheskaya Str., 5 , Troitsk, 108840 Moscow , Russia
| | - Linda Grodd
- Department of Physics , University of Siegen , Walter-Flex-Strasse 3 , 57072 Siegen , Germany
| | - Souren Grigorian
- Department of Physics , University of Siegen , Walter-Flex-Strasse 3 , 57072 Siegen , Germany
- Aix-Marseille Université, Université Toulon, CNRS, IM2NP , Avenue Escadrille Normandie Niemen-Case 142 , F-13397 Marseille , France
| | - Sergei A Ponomarenko
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
- Chemistry Department , Lomonosov Moscow State University , Leninskiye gory 1/3 , 119991 Moscow , Russia
| | - Dmitry Yu Paraschuk
- Faculty of Physics & International Laser Centre of Lomonosov Moscow State University , Leninskiye gory 1/62 , 119991 Moscow , Russia
- Enikolopov Institute of Synthetic Polymeric Materials of Russian Academy of Sciences , Profsoyuznaya Str. 70 , 117393 Moscow , Russia
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31
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Sizov AS, Agina EV, Ponomarenko SA. Self-assembled semiconducting monolayers in organic electronics. RUSSIAN CHEMICAL REVIEWS 2018. [DOI: 10.1070/rcr4839] [Citation(s) in RCA: 20] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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32
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Liu C, Zhou H, Wu Q, Dai F, Lau TK, Lu X, Yang T, Wang Z, Liu X, Liu C. Guided Formation of Large Crystals of Organic and Perovskite Semiconductors by an Ultrasonicated Dispenser and Their Application as the Active Matrix of Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2018; 10:39921-39932. [PMID: 30353719 DOI: 10.1021/acsami.8b10861] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The crystallization of organic or perovskite semiconductors reflects the intermolecular interactions and crucially determines the charge transport in opto-electronic devices. In this report, we demonstrate and investigate the use of an ultrasonicated dispenser to guide the formation of crystals of organic and perovskite semiconductors. The moving speed of the dispenser affects the match between the concentration gradient and evaporation rate near the three-phase contact lines and thus the generation of various crystallization morphologies. The mechanism of crystallization is given by a relationship between the calculated concentration gradient profile and the degree of crystal alignment. Highly ordered, aligned crystals are achieved for both organic bis(triisopropylsilylethynyl)-pentacene and perovskite MAPbI3 semiconductors. Absorption spectra, Raman scattering spectroscopy analysis, and grazing incidence wide-angle X-ray scattering measurement reveal the strong anisotropy of the crystalline structures. The aligned crystals lead to remarkably enhanced electrical performances in an organic thin-film transistor (OTFT) and perovskite photodetector. As a demonstration, we combine the OTFT with photodetectors to achieve an active matrix of normally off, gate-tunable photodetectors that operate under ambient conditions.
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Affiliation(s)
- Chenning Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , P. R. China
| | - Hang Zhou
- Shenzhen Key Lab of Thin Film Transistor and Advanced Display, Peking University Shenzhen Graduate School , Peking University , Shenzhen 518055 , P. R. China
| | - Qian Wu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , P. R. China
| | - Fuhua Dai
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , P. R. China
| | - Tsz-Ki Lau
- Department of Physics , The Chinese University of Hong Kong , New Territories , Hong Kong , P. R. China
| | - Xinhui Lu
- Department of Physics , The Chinese University of Hong Kong , New Territories , Hong Kong , P. R. China
| | - Tengzhou Yang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , P. R. China
| | - Zixin Wang
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , P. R. China
| | - Xuying Liu
- School of Materials Science and Engineering , Zhengzhou University , 100 Kexue Avenue , Zhongyuan, Zhengzhou 450001 , Henan , P. R. China
| | - Chuan Liu
- State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology , Sun Yat-sen University , Guangzhou 510275 , P. R. China
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33
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Vladimirov I, Kühn M, Geßner T, May F, Weitz RT. Energy barriers at grain boundaries dominate charge carrier transport in an electron-conductive organic semiconductor. Sci Rep 2018; 8:14868. [PMID: 30291288 PMCID: PMC6173704 DOI: 10.1038/s41598-018-33308-y] [Citation(s) in RCA: 27] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/02/2018] [Accepted: 09/26/2018] [Indexed: 11/26/2022] Open
Abstract
Semiconducting organic films that are at the heart of light-emitting diodes, solar cells and transistors frequently contain a large number of morphological defects, most prominently at the interconnects between crystalline regions. These grain boundaries can dominate the overall (opto-)electronic properties of the entire device and their exact morphological and energetic nature is still under current debate. Here, we explore in detail the energetics at the grain boundaries of a novel electron conductive perylene diimide thin film. Via a combination of temperature dependent charge transport measurements and ab-initio simulations at atomistic resolution, we identify that energetic barriers at grain boundaries dominate charge transport in our system. This novel aspect of physics at the grain boundary is distinct from previously identified grain-boundary defects that had been explained by trapping of charges. We furthermore derive molecular design criteria to suppress such energetic barriers at grain boundaries in future, more efficient organic semiconductors.
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Affiliation(s)
- I Vladimirov
- BASF SE, FET Systems, Carl-Bosch-Straße 38, 67056, Ludwigshafen, Germany.,InnovationLab GmbH, Speyerer Str. 4, 69115, Heidelberg, Germany
| | - M Kühn
- BASF SE, FET Systems, Carl-Bosch-Straße 38, 67056, Ludwigshafen, Germany.
| | - T Geßner
- BASF SE, FET Systems, Carl-Bosch-Straße 38, 67056, Ludwigshafen, Germany
| | - F May
- BASF SE, FET Systems, Carl-Bosch-Straße 38, 67056, Ludwigshafen, Germany.,InnovationLab GmbH, Speyerer Str. 4, 69115, Heidelberg, Germany
| | - R T Weitz
- BASF SE, FET Systems, Carl-Bosch-Straße 38, 67056, Ludwigshafen, Germany. .,InnovationLab GmbH, Speyerer Str. 4, 69115, Heidelberg, Germany. .,Physics of Nanosystems, Faculty of Physics, Ludwig-Maximilians University, Amalienstr. 54, 80799, Munich, Germany. .,Center for Nanoscience (CeNS), Ludwig-Maximilians University Munich, Schellingstr. 4, 80799, Munich, Germany. .,Nanosystems Initiative Munich (NIM), Schellingstr. 4, 80799, Munich, Germany.
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34
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Raza Naqvi ST, Shirinfar B, Majeed S, Najam-ul-Haq M, Hussain D, Iqbal T, Ahmed N. Synthesis, design and sensing applications of nanostructured ceria-based materials. Analyst 2018; 143:5610-5628. [DOI: 10.1039/c8an01268g] [Citation(s) in RCA: 22] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Abstract
Cerium-based materials possess redox properties due to the presence of dual valence states of Ce3+ and Ce4+.
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Affiliation(s)
- Sayed Tayyab Raza Naqvi
- Division of Analytical Chemistry
- Institute of Chemical Sciences
- Bahauddin Zakariya University
- Multan 60800
- Pakistan
| | | | - Saadat Majeed
- Division of Analytical Chemistry
- Institute of Chemical Sciences
- Bahauddin Zakariya University
- Multan 60800
- Pakistan
| | - Muhammad Najam-ul-Haq
- Division of Analytical Chemistry
- Institute of Chemical Sciences
- Bahauddin Zakariya University
- Multan 60800
- Pakistan
| | - Dilshad Hussain
- Division of Analytical Chemistry
- Institute of Chemical Sciences
- Bahauddin Zakariya University
- Multan 60800
- Pakistan
| | - Tanyia Iqbal
- Division of Analytical Chemistry
- Institute of Chemical Sciences
- Bahauddin Zakariya University
- Multan 60800
- Pakistan
| | - Nisar Ahmed
- School of Chemistry
- University of Bristol
- Bristol
- UK
- International Centre for Chemical and Biological Sciences
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