1
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Zhang X, Jiang R, Shen X, Huang X, Jiang QD, Ku W. Geometric Inhibition of Superflow in Single-Layer Graphene Suggests a Staggered-Flux Superconductivity in Bilayer and Trilayer Graphene. NANO LETTERS 2024; 24:10451-10457. [PMID: 39133810 DOI: 10.1021/acs.nanolett.4c01390] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/15/2024]
Abstract
In great contrast to the numerous discoveries of superconductivity in layer-stacked graphene systems, the absence of superconductivity in the simplest monolayer graphene remains quite puzzling. Here, through realistic computation of the electronic structure, we identify a systematic trend that superconductivity emerges only upon alteration of the low-energy electronic lattice from the underlying honeycomb atomic structure. We then demonstrate that this inhibition can result from geometric frustration of the bond lattice that disables the quantum phase coherence of the order parameter residing on it. In comparison, upon deviation from the honeycomb lattice, relief of geometric frustration allows robust superfluidity with nontrivial spatial structures. For the specific examples of bilayer and trilayer graphene under an external electric field, such a bond-centered order parameter would develop superfluidity with staggered flux that breaks the time-reversal symmetry. Our study also suggests the possible realization of the long-sought superconductivity in single-layer graphene via the application of unidirectional strain.
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Affiliation(s)
- Xinyao Zhang
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Ruoshi Jiang
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xingchen Shen
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xiaomo Huang
- Zhiyuan College, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Qing-Dong Jiang
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
- Shanghai Branch, Hefei National Laboratory, Shanghai 201315, China
| | - Wei Ku
- School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Shanghai Branch, Hefei National Laboratory, Shanghai 201315, China
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2
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Liu J, Wang H, Shi X, Zhang X. Prediction of superconductivity in a series of tetragonal transition metal dichalcogenides. MATERIALS HORIZONS 2024; 11:2694-2700. [PMID: 38501208 DOI: 10.1039/d4mh00141a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/20/2024]
Abstract
Transition metal dichalcogenides (TMDCs) represent a well-known material family with diverse structural phases and rich electronic properties; they are thus an ideal platform for studying the emergence and exotic phenomenon of superconductivity (SC). Herein, we propose the existence of tetragonal TMDCs with a distorted Lieb (dLieb) lattice structure and the stabilized transition metal disulfides (MS2), including dLieb-ZrS2, dLieb-NbS2, dLieb-MnS2, dLieb-FeS2, dLieb-ReS2, and dLieb-OsS2. Except for semiconducting dLieb-ZrS2 and magnetic dLieb-MnS2, the rest of metallic dLieb-MS2 was found to exhibit intrinsic SC with the transition temperature (TC) ranging from ∼5.4 to ∼13.0 K. The TC of dLieb-ReS2 and dLieb-OsS2 exceeded 10 K and was higher than that of the intrinsic SC in the known metallic TMDCs, which is attributed to the significant phonon-softening enhanced electron-phonon coupling strength. Different from the Ising spin-orbit coupling (SOC) effect in existing non-centrosymmetric TMDCs, the non-magnetic dLieb-MS2 monolayers exhibit the Dresselhaus SOC effect, which is featured by in-plane spin orientations and will give rise to the topological SC under proper conditions. In addition to enriching the structural phases of TMDCs, our work predicts a series of SC candidates with high intrinsic TC and topological non-triviality used for fault-tolerant quantum computation.
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Affiliation(s)
- Jiale Liu
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Huidong Wang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Xiaojun Shi
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
| | - Xiaoming Zhang
- College of Physics and Optoelectronic Engineering, Ocean University of China, Qingdao, Shandong 266100, China.
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3
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de Bragança RH, Croitoru MD, Shanenko AA, Aguiar JA. Effect of Material-Dependent Boundaries on the Interference Induced Enhancement of the Surface Superconductivity Temperature. J Phys Chem Lett 2023:5657-5664. [PMID: 37311195 DOI: 10.1021/acs.jpclett.3c00835] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Using the tight-binding Bogoliubov-de Gennes formalism, we describe the influence of the surface potential on the superconducting critical temperature at the surface. Surface details are taken into account within the framework of the self-consistent Lang-Kohn effective potential. The regimes of strong and weak coupling of superconducting correlations are considered. Our study reveals that, although the enhancement of the surface critical temperature, originating from the enhancement of the localized correlation due to the constructive interference between quasiparticle bulk orbits, can be sufficiently affected by the surface potential, this influence, nonetheless, strongly depends on the bulk material parameters, such as the effective electron density parameter and Fermi energy, and is likely to be negligible for some materials, in particular for narrow-band metals. Thus, superconducting properties of a surface can be controlled by the surface/interface potential properties, which offer an additional tuning knob for the superconducting state at the surface/interface.
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Affiliation(s)
- R H de Bragança
- Departamento de Física, Centro de Ciências Exatas e da Natureza, Universidade Federal de Pernambuco, Av. Prof. Aníbal Fernandes, s/n, 50670-901, Recife-PE, Brazil
| | - M D Croitoru
- Departamento de Física, Centro de Ciências Exatas e da Natureza, Universidade Federal de Pernambuco, Av. Prof. Aníbal Fernandes, s/n, 50670-901, Recife-PE, Brazil
- HSE University, 101000, Moscow, Russia
| | | | - J Albino Aguiar
- Departamento de Física, Centro de Ciências Exatas e da Natureza, Universidade Federal de Pernambuco, Av. Prof. Aníbal Fernandes, s/n, 50670-901, Recife-PE, Brazil
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4
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Cao C, Melegari M, Philippi M, Domaretskiy D, Ubrig N, Gutiérrez-Lezama I, Morpurgo AF. Full Control of Solid-State Electrolytes for Electrostatic Gating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211993. [PMID: 36812653 DOI: 10.1002/adma.202211993] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2022] [Revised: 02/10/2023] [Indexed: 05/05/2023]
Abstract
Ionic gating is a powerful technique to realize field-effect transistors (FETs) enabling experiments not possible otherwise. So far, ionic gating has relied on the use of top electrolyte gates, which pose experimental constraints and make device fabrication complex. Promising results obtained recently in FETs based on solid-state electrolytes remain plagued by spurious phenomena of unknown origin, preventing proper transistor operation, and causing limited control and reproducibility. Here, a class of solid-state electrolytes for gating (Lithium-ion conducting glass-ceramics, LICGCs) is explored, the processes responsible for the spurious phenomena and irreproducible behavior are identified, and properly functioning transistors exhibiting high density ambipolar operation with gate capacitance of ≈ 20 - 50 µ F c m - 2 \[20{\bm{ - }}50\;\mu F c{m^{{\bm{ - }}2}}\] (depending on the polarity of the accumulated charges) are demonstrated. Using 2D semiconducting transition-metal dichalcogenides, the ability to implement ionic-gate spectroscopy to determine the semiconducting bandgap, and to accumulate electron densities above 1014 cm-2 are demostrated, resulting in gate-induced superconductivity in MoS2 multilayers. As LICGCs are implemented in a back-gate configuration, they leave the surface of the material exposed, enabling the use of surface-sensitive techniques (such as scanning tunneling microscopy and photoemission spectroscopy) impossible so far in ionic-gated devices. They also allow double ionic gated devices providing independent control of charge density and electric field.
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Affiliation(s)
- Chuanwu Cao
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Margherita Melegari
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Marc Philippi
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Daniil Domaretskiy
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
- Department of Applied Physics, University of Geneva, 24 Quai Ernest Ansermet, Geneva, CH-1211, Switzerland
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5
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Constructing a rapid ion and electron migration channels in MoSe2/SnSe2@C 2D heterostructures for high-efficiency sodium-ion half/full batteries. Electrochim Acta 2023. [DOI: 10.1016/j.electacta.2023.142239] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/18/2023]
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6
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Wu H, Li S, Liu W, Lv B. Multiple-Intercalation Stages and Universal Tc Enhancement through Polar Organic Species in Electron-Doped 1T-SnSe 2. Inorg Chem 2023; 62:3525-3531. [PMID: 36791412 DOI: 10.1021/acs.inorgchem.2c03902] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/17/2023]
Abstract
In this work, we report multiple-intercalation stages and universal Tc enhancement of superconductivity in 1T-SnSe2 through Li and organic molecule co-intercalation. We observe significantly increased lattice parameters of up to 40 Å and a dramatically enlarged interlayer distance of up to ∼11 Å in Li and N,N-dimethylformamide (DMF) co-intercalated SnSe2. Well-separated co-intercalation stages with different stacking patterns have been discovered by carefully controlled reaction times and concentrations of solutions. These co-intercalation stages are superconductors showing different superconducting signals. In addition, Li and various organic species such as acetone, dimethyl sulfoxide (DMSO), and tetrahydrofuran (THF) have been co-intercalated into SnSe2 crystals; all of which show an enhanced superconducting Tc compared to solely Li-intercalated SnSe2. Our findings may provide more insight into effectively tuning the electronic structure of the lamellar structure through organic molecule co-regulation and open a new strategy to engineer the physical properties of these layered materials by controlling their different intercalation stages.
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Affiliation(s)
- Hanlin Wu
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Sheng Li
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Wenhao Liu
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
| | - Bing Lv
- Department of Physics, The University of Texas at Dallas, Richardson, Texas 75080, United States
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7
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Zhang Z, Wang Y, Zhao Z, Song W, Zhou X, Li Z. Interlayer Chemical Modulation of Phase Transitions in Two-Dimensional Metal Chalcogenides. Molecules 2023; 28:molecules28030959. [PMID: 36770625 PMCID: PMC9921675 DOI: 10.3390/molecules28030959] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 01/15/2023] [Accepted: 01/16/2023] [Indexed: 01/21/2023] Open
Abstract
Two-dimensional metal chalcogenides (2D-MCs) with complex interactions are usually rich in phase transition behavior, such as superconductivity, charge density wave (CDW), and magnetic transitions, which hold great promise for the exploration of exciting physical properties and functional applications. Interlayer chemical modulation, as a renewed surface modification method, presents congenital advantages to regulate the phase transitions of 2D-MCs due to its confined space, strong guest-host interactions, and local and reversible modulation without destructing the host lattice, whereby new phenomena and functionalities can be produced. Herein, recent achievements in the interlayer chemical modulation of 2D-MCs are reviewed from the aspects of superconducting transition, CDW transition, semiconductor-to-metal transition, magnetic phase transition, and lattice transition. We systematically discuss the roles of charge transfer, spin coupling, and lattice strain on the modulation of phase transitions in the guest-host architectures of 2D-MCs established by electrochemical intercalation, solution-processed intercalation, and solid-state intercalation. New physical phenomena, new insight into the mechanism of phase transitions, and derived functional applications are presented. Finally, a prospectus of the challenges and opportunities of interlayer chemical modulation for future research is pointed out.
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Affiliation(s)
- Zhi Zhang
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing 211189, China
| | - Yi Wang
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing 211189, China
| | - Zelin Zhao
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing 211189, China
| | - Weijing Song
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing 211189, China
| | - Xiaoli Zhou
- School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zejun Li
- School of Physics, Frontiers Science Center for Mobile Information Communication and Security, Southeast University, Nanjing 211189, China
- Purple Mountain Laboratories, Nanjing 211111, China
- Correspondence:
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8
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Wang J, Wu M, Zhen W, Li T, Li Y, Zhu X, Ning W, Tian M. Superconductivity in single-crystalline ZrTe 3-x ( x ≤ 0.5) nanoplates. NANOSCALE ADVANCES 2023; 5:479-484. [PMID: 36756273 PMCID: PMC9846514 DOI: 10.1039/d2na00628f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Accepted: 11/17/2022] [Indexed: 06/18/2023]
Abstract
Superconductivity with an unusual filamented character below 2 K has been reported in bulk ZrTe3 crystals, a well-known charge density wave (CDW) material, but still lacks in its nanostructures. Here, we systemically investigated the transport properties of controllable chemical vapor transport synthesized ZrTe3-x nanoplates. Intriguingly, superconducting behavior is found at T c = 3.4 K and can be understood by the suppression of CDW due to the atomic disorder formed by Te vacancies. Magnetic field and angle dependent upper critical field revealed that the superconductivity in the nanoplates exhibits a large anisotropy and two-dimensional character. This two-dimensional nature of superconductivity was further satisfactorily described using the Berezinsky-Kosterlitz-Thouless transition. Our results not only demonstrate the critical role of Te vacancies for superconductivity in ZrTe3-x nanoplates, but also provide a promising platform to explore the exotic physics in the nanostructure devices.
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Affiliation(s)
- Jie Wang
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Physics, University of Science and Technology of China Hefei 230026 P. R. China
| | - Min Wu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Weili Zhen
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Physics, University of Science and Technology of China Hefei 230026 P. R. China
| | - Tian Li
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Yun Li
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Materials Science and Engineering, ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University Clayton Victoria 3800 Australia
| | - Xiangde Zhu
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Wei Ning
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
| | - Mingliang Tian
- Anhui Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences Hefei 230031 Anhui P. R. China
- Department of Physics, School of Physics and Materials Science, Anhui University Hefei 230601 P. R. China
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9
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Ding D, Qu Z, Han X, Han C, Zhuang Q, Yu XL, Niu R, Wang Z, Li Z, Gan Z, Wu J, Lu J. Multivalley Superconductivity in Monolayer Transition Metal Dichalcogenides. NANO LETTERS 2022; 22:7919-7926. [PMID: 36173038 DOI: 10.1021/acs.nanolett.2c02947] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In transition metal dichalcogenides (TMDs), Ising superconductivity with an antisymmetric spin texture on the Fermi surface has attracted wide interest due to the exotic pairing and topological properties. However, it is not clear whether the Q valley with a giant spin splitting is involved in the superconductivity of heavily doped semiconducting 2H-TMDs. Here by taking advantage of a high-quality monolayer WS2 on hexagonal boron nitride flakes, we report an ionic-gating induced superconducting dome with a record high critical temperature of ∼6 K, accompanied by an emergent nonlinear Hall effect. The nonlinearity indicates the development of an additional high-mobility channel, which (corroborated by first principle calculations) can be ascribed to the population of Q valleys. Thus, multivalley population at K and Q is suggested to be a prerequisite for developing superconductivity. The involvement of Q valleys also provides insights to the spin textured Fermi surface of Ising superconductivity in the large family of transition metal dichalcogenides.
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Affiliation(s)
- Dongdong Ding
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuangzhuang Qu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Xiangyan Han
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Chunrui Han
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Quan Zhuang
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China
- Inner Mongolia Key Laboratory of Carbon Nanomaterials, Nano Innovation Institute (NII), Inner Mongolia Minzu University, Tongliao 028000, China
| | - Xiang-Long Yu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - Ruirui Niu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhiyu Wang
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zhuoxian Li
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Zizhao Gan
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jiansheng Wu
- Shenzhen Institute for Quantum Science and Engineering (SIQSE), Southern University of Science and Technology, Shenzhen 518055, China
- International Quantum Academy, Shenzhen 518048, China
| | - Jianming Lu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
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Mei J, Shang J, Zhang C, Qi D, Kou L, Wijerathne B, Hu C, Liao T, MacLeod J, Sun Z. MAX-phase Derived Tin Diselenide for 2D/2D Heterostructures with Ultralow Surface/Interface Transport Barriers toward Li-/Na-ions Storage. SMALL METHODS 2022; 6:e2200658. [PMID: 35802910 DOI: 10.1002/smtd.202200658] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 06/15/2022] [Indexed: 06/15/2023]
Abstract
2D tin diselenide and its derived 2D heterostructures have delivered promising potentials in various applications ranging from electronics to energy storage devices. The major challenges associated with large-scale fabrication of SnSe2 crystals, however, have hindered its engineering applications. Herein, a tin-extraction synthetic method is proposed for producing large-size SnSe2 bulk crystals. In a typical synthesis, a Sn-containing MAX phase (V2 SnC) and a Se source are heat-treated under a reducing atmosphere, by which Sn is extracted from the V2 SnC phase as a rectified Sn source to form SnSe2 crystals in the cold zone. After the following liquid exfoliation, the obtained 2D SnSe2 nanosheets have a lateral size of a few centimeters and an atomic thickness. Furthermore, by coupling with 2D graphene to form 2D/2D SnSe2 /graphene heterostructured electrodes, as validated by theoretical calculation and experimental studies, the superior Li-/Na-ion storage performance with ultralow surface/interface ion transport barriers are achieved for rechargeable Li-/Na-ion batteries. This innovative synthetic strategy opens a new avenue for the large-scale synthesis of selenides and offers more options into the practical application of emerging 2D/2D heterostructure for electrochemical energy storage.
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Affiliation(s)
- Jun Mei
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Jing Shang
- School of Mechanical, Medical & Process Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Materials Science & Engineering, Shaanxi University of Science & Technology, Xi'an, 710021, China
| | - Chao Zhang
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Dongchen Qi
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Liangzhi Kou
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Mechanical, Medical & Process Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Binodhya Wijerathne
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Chunfeng Hu
- School of Materials Science and Engineering, Southwest Jiaotong University, Chengdu, 610031, China
| | - Ting Liao
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Mechanical, Medical & Process Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Jennifer MacLeod
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4000, Australia
| | - Ziqi Sun
- Centre for Materials Science, Queensland University of Technology, Brisbane, QLD 4000, Australia
- School of Chemistry and Physics, Queensland University of Technology, Brisbane, QLD 4000, Australia
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11
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Liu Z, Han T, Liu M, Huang S, Zhang Z, Long M, Hou X, Shan L. Protonation enhanced superconductivity in PdTe 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:335603. [PMID: 35679850 DOI: 10.1088/1361-648x/ac7767] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2022] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Electrochemical ionic liquid gating is an effective way to intercalate ions into layered materials and modulate the properties. Here we report an enhanced superconductivity in a topological superconductor candidate PdTe2through electrochemical gating procedure. The superconducting transition temperature was increased to approximately 3.2 K by ionic gating induced protonation at room temperature. Moreover, a further enhanced superconductivity of both superconducting transition temperature and superconducting volume fraction was observed after the gated samples were placed in a glove box for 2 months. This may be caused by the diffusion of protons in the gated single crystals, which is rarely reported in electrochemical ionic liquid gating experiments. Our results further the superconducting study of PdTe2and may reveal a common phenomenon in the electrochemical gating procedure.
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Affiliation(s)
- Zhen Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Mengqin Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Shuting Huang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
| | - Zongyuan Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Xingyuan Hou
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, People's Republic of China
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Anhui University, Hefei 230601, People's Republic of China
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12
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Sun J, Xiao X, Zhang Y, Cao W, Wang N, Gu L. Universal Method to Synergistically Exfoliate and Functionalize Boron Nitride Nanosheets with a Large Yield and High Concentration. Ind Eng Chem Res 2022. [DOI: 10.1021/acs.iecr.2c01263] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/28/2023]
Affiliation(s)
- Jiulong Sun
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Xinzhe Xiao
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Yumin Zhang
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Wanwan Cao
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
| | - Ning Wang
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen 518100, China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Lin Gu
- School of Chemical Engineering and Technology, Sun Yat-sen University, Zhuhai 519082, China
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13
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Wang Y, He H, Wang C, Lu Y, Dong K, Huo F, Zhang S. Insights into Ionic Liquids: From Z-Bonds to Quasi-Liquids. JACS AU 2022; 2:543-561. [PMID: 35373210 PMCID: PMC8965826 DOI: 10.1021/jacsau.1c00538] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/29/2021] [Indexed: 05/26/2023]
Abstract
Ionic liquids (ILs) hold great promise in the fields of green chemistry, environmental science, and sustainable technology due to their unique properties, such as a tailorable structure, the various types available, and their environmentally friendly features. On the basis of multiscale simulations and experimental characterizations, two unique features of ILs are as follows: (1) strong coupling interactions between the electrostatic forces and hydrogen bonds, namely in the Z-bond, and (2) the unique semiordered structure and properties of ultrathin films, specifically regarding the quasi-liquid. In accordance with the aforementioned theoretical findings, many cutting-edge applications have been proposed: for example, CO2 capture and conversion, biomass conversion and utilization, and energy storage materials. Although substantial progress has been made recently in the field of ILs, considerable challenges remain in understanding the nature of and devising applications for ILs, especially in terms of e.g. in situ/real-time observation and highly precise multiscale simulations of the Z-bond and quasi-liquid. In this Perspective, we review recent developments and challenges for the IL research community and provide insights into the nature and function of ILs, which will facilitate future applications.
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Affiliation(s)
- Yanlei Wang
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- University
of Chinese Academy of Sciences, Beijing 100049, People’s
Republic of China
| | - Hongyan He
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- University
of Chinese Academy of Sciences, Beijing 100049, People’s
Republic of China
| | - Chenlu Wang
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- University
of Chinese Academy of Sciences, Beijing 100049, People’s
Republic of China
| | - Yumiao Lu
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
| | - Kun Dong
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
| | - Feng Huo
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
| | - Suojiang Zhang
- Beijing
Key Laboratory of Ionic Liquids Clean Process, State Key Laboratory
of Multiphase Complex Systems, CAS Key Laboratory of Green Process
and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
- University
of Chinese Academy of Sciences, Beijing 100049, People’s
Republic of China
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14
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Matsumoto R, Terashima K, Nakano S, Nakamura K, Yamamoto S, Yamamoto TD, Ishikawa T, Adachi S, Irifune T, Imai M, Takano Y. High-Pressure Synthesis of Superconducting Sn 3S 4 Using a Diamond Anvil Cell with a Boron-Doped Diamond Heater. Inorg Chem 2022; 61:4476-4483. [PMID: 35226490 DOI: 10.1021/acs.inorgchem.2c00013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
High-pressure techniques open exploration of functional materials in broad research fields. An established diamond anvil cell with a boron-doped diamond heater and transport measurement terminals has performed the high-pressure synthesis of a cubic Sn3S4 superconductor. X-ray diffraction and Raman spectroscopy reveal that the Sn3S4 phase is stable in the pressure range of P > 5 GPa in a decompression process. Transport measurement terminals in the diamond anvil cell detect a metallic nature and superconductivity in the synthesized Sn3S4 with a maximum onset transition temperature (Tconset) of 13.3 K at 5.6 GPa. The observed pressure-Tc relationship is consistent with that from the first-principles calculation. The observation of superconductivity in Sn3S4 opens further materials exploration under high-temperature and -pressure conditions.
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Affiliation(s)
- Ryo Matsumoto
- International Center for Young Scientists (ICYS), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Kensei Terashima
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Satoshi Nakano
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan
| | - Kazuki Nakamura
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.,University of Tsukuba, Ibaraki 305-8577, Japan
| | - Sayaka Yamamoto
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.,University of Tsukuba, Ibaraki 305-8577, Japan
| | - Takafumi D Yamamoto
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Takahiro Ishikawa
- Elements Strategy Initiative Center for Magnetic Materials (ESICMM), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Shintaro Adachi
- Nagamori Institute of Actuators, Kyoto University of Advanced Science, Ukyo-ku, Kyoto 615-8577, Japan
| | - Tetsuo Irifune
- Geodynamics Research Center (GRC), Ehime University, Matsuyama, Ehime 790-8577, Japan
| | - Motoharu Imai
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
| | - Yoshihiko Takano
- International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.,University of Tsukuba, Ibaraki 305-8577, Japan
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15
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D’Olimpio G, Farias D, Kuo CN, Ottaviano L, Lue CS, Boukhvalov DW, Politano A. Tin Diselenide (SnSe 2) Van der Waals Semiconductor: Surface Chemical Reactivity, Ambient Stability, Chemical and Optical Sensors. MATERIALS (BASEL, SWITZERLAND) 2022; 15:1154. [PMID: 35161097 PMCID: PMC8838464 DOI: 10.3390/ma15031154] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Revised: 01/25/2022] [Accepted: 01/26/2022] [Indexed: 02/06/2023]
Abstract
Tin diselenide (SnSe2) is a layered semiconductor with broad application capabilities in the fields of energy storage, photocatalysis, and photodetection. Here, we correlate the physicochemical properties of this van der Waals semiconductor to sensing applications for detecting chemical species (chemosensors) and millimeter waves (terahertz photodetectors) by combining experiments of high-resolution electron energy loss spectroscopy and X-ray photoelectron spectroscopy with density functional theory. The response of the pristine, defective, and oxidized SnSe2 surface towards H2, H2O, H2S, NH3, and NO2 analytes was investigated. Furthermore, the effects of the thickness were assessed for monolayer, bilayer, and bulk samples of SnSe2. The formation of a sub-nanometric SnO2 skin over the SnSe2 surface (self-assembled SnO2/SnSe2 heterostructure) corresponds to a strong adsorption of all analytes. The formation of non-covalent bonds between SnO2 and analytes corresponds to an increase of the magnitude of the transferred charge. The theoretical model nicely fits experimental data on gas response to analytes, validating the SnO2/SnSe2 heterostructure as a suitable playground for sensing of noxious gases, with sensitivities of 0.43, 2.13, 0.11, 1.06 [ppm]-1 for H2, H2S, NH3, and NO2, respectively. The corresponding limit of detection is 5 ppm, 10 ppb, 250 ppb, and 400 ppb for H2, H2S, NH3, and NO2, respectively. Furthermore, SnSe2-based sensors are also suitable for fast large-area imaging applications at room temperature for millimeter waves in the THz range.
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Affiliation(s)
- Gianluca D’Olimpio
- Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, 67100 L’Aquila, Italy; (G.D.); (L.O.)
| | - Daniel Farias
- Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto “Nicolás Cabrera”, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), 28049 Madrid, Spain
| | - Chia-Nung Kuo
- Department of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan; (C.-N.K.); (C.S.L.)
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
| | - Luca Ottaviano
- Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, 67100 L’Aquila, Italy; (G.D.); (L.O.)
- CNR-SPIN UoS L’Aquila, Via Vetoio, 67100 L’Aquila, Italy
| | - Chin Shan Lue
- Department of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, Tainan 70101, Taiwan; (C.-N.K.); (C.S.L.)
- Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10601, Taiwan
| | - Danil W. Boukhvalov
- College of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, China
- Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L’Aquila, via Vetoio, 67100 L’Aquila, Italy; (G.D.); (L.O.)
- CNR-IMM Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
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16
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Liu KL, Luo MB, Zhou X, Lin Q. Cationic complex directed thiostannate layers with excellent proton conduction and photocatalysis properties. CrystEngComm 2022. [DOI: 10.1039/d2ce00043a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Three isostructural thiostannates SnS-M (M = Fe, Mn and Zn) have been fabricated using metal-amine complex cations as structure-directing agents. These thiostannates are composed of typical two-dimensional lamellar [Sn3S7]n2n- anionic...
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17
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Vaquero D, Clericò V, Salvador-Sánchez J, Quereda J, Diez E, Pérez-Muñoz AM. Ionic-Liquid Gating in Two-Dimensional TMDs: The Operation Principles and Spectroscopic Capabilities. MICROMACHINES 2021; 12:mi12121576. [PMID: 34945426 PMCID: PMC8704478 DOI: 10.3390/mi12121576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/15/2021] [Revised: 12/13/2021] [Accepted: 12/15/2021] [Indexed: 11/16/2022]
Abstract
Ionic-liquid gating (ILG) is able to enhance carrier densities well above the achievable values in traditional field-effect transistors (FETs), revealing it to be a promising technique for exploring the electronic phases of materials in extreme doping regimes. Due to their chemical stability, transition metal dichalcogenides (TMDs) are ideal candidates to produce ionic-liquid-gated FETs. Furthermore, as recently discovered, ILG can be used to obtain the band gap of two-dimensional semiconductors directly from the simple transfer characteristics. In this work, we present an overview of the operation principles of ionic liquid gating in TMD-based transistors, establishing the importance of the reference voltage to obtain hysteresis-free transfer characteristics, and hence, precisely determine the band gap. We produced ILG-based bilayer WSe2 FETs and demonstrated their ambipolar behavior. We estimated the band gap directly from the transfer characteristics, demonstrating the potential of ILG as a spectroscopy technique.
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Affiliation(s)
- Daniel Vaquero
- Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain; (D.V.); (V.C.); (J.S.-S.); (J.Q.)
| | - Vito Clericò
- Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain; (D.V.); (V.C.); (J.S.-S.); (J.Q.)
| | - Juan Salvador-Sánchez
- Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain; (D.V.); (V.C.); (J.S.-S.); (J.Q.)
| | - Jorge Quereda
- Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain; (D.V.); (V.C.); (J.S.-S.); (J.Q.)
| | - Enrique Diez
- Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain; (D.V.); (V.C.); (J.S.-S.); (J.Q.)
- Correspondence: (E.D.); (A.M.P.-M.)
| | - Ana M. Pérez-Muñoz
- Nanotechnology Group, USAL–Nanolab, Universidad de Salamanca, E-37008 Salamanca, Spain; (D.V.); (V.C.); (J.S.-S.); (J.Q.)
- FIW Consulting S.L., Gabriel Garcia Marquez, 4 las Rozas, E-28232 Madrid, Spain
- Correspondence: (E.D.); (A.M.P.-M.)
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18
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Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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19
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Zhang D, Falson J. Ising pairing in atomically thin superconductors. NANOTECHNOLOGY 2021; 32:502003. [PMID: 34479228 DOI: 10.1088/1361-6528/ac238d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Accepted: 09/03/2021] [Indexed: 06/13/2023]
Abstract
Ising-type pairing in atomically thin superconducting materials has emerged as a novel means of generating devices with resilience to a magnetic field applied parallel to the two-dimensional (2D) plane. In this mini-review, we canvas the state of the field by giving a historical account of 2D superconductors with strongly enhanced in-plane upper critical fields, together with the type-I and type-II Ising pairing mechanisms. We highlight the vital role of spin-orbit coupling in these superconductors and discuss other effects such as symmetry breaking, atomic thicknesses, etc. Finally, we summarize the recent theoretical proposals and highlight the open questions, such as exploring topological superconductivity in these systems and looking for more materials with Ising pairing.
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Affiliation(s)
- Ding Zhang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
- Beijing Academy of Quantum Information Sciences, Beijing 100193, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing 100084, People's Republic of China
| | - Joseph Falson
- Department of Applied Physics and Materials Science, California Institute of Technology, Pasadena, CA, United States of America
- Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, CA 91125, United States of America
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20
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Lai Z, He Q, Tran TH, Repaka DVM, Zhou DD, Sun Y, Xi S, Li Y, Chaturvedi A, Tan C, Chen B, Nam GH, Li B, Ling C, Zhai W, Shi Z, Hu D, Sharma V, Hu Z, Chen Y, Zhang Z, Yu Y, Renshaw Wang X, Ramanujan RV, Ma Y, Hippalgaonkar K, Zhang H. Metastable 1T'-phase group VIB transition metal dichalcogenide crystals. NATURE MATERIALS 2021; 20:1113-1120. [PMID: 33859384 DOI: 10.1038/s41563-021-00971-y] [Citation(s) in RCA: 70] [Impact Index Per Article: 23.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2019] [Accepted: 02/24/2021] [Indexed: 06/12/2023]
Abstract
Metastable 1T'-phase transition metal dichalcogenides (1T'-TMDs) with semi-metallic natures have attracted increasing interest owing to their uniquely distorted structures and fascinating phase-dependent physicochemical properties. However, the synthesis of high-quality metastable 1T'-TMD crystals, especially for the group VIB TMDs, remains a challenge. Here, we report a general synthetic method for the large-scale preparation of metastable 1T'-phase group VIB TMDs, including WS2, WSe2, MoS2, MoSe2, WS2xSe2(1-x) and MoS2xSe2(1-x). We solve the crystal structures of 1T'-WS2, -WSe2, -MoS2 and -MoSe2 with single-crystal X-ray diffraction. The as-prepared 1T'-WS2 exhibits thickness-dependent intrinsic superconductivity, showing critical transition temperatures of 8.6 K for the thickness of 90.1 nm and 5.7 K for the single layer, which we attribute to the high intrinsic carrier concentration and the semi-metallic nature of 1T'-WS2. This synthesis method will allow a more systematic investigation of the intrinsic properties of metastable TMDs.
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Affiliation(s)
- Zhuangchai Lai
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Qiyuan He
- Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Thu Ha Tran
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - D V Maheswar Repaka
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Dong-Dong Zhou
- MOE Key Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry, Sun Yat-Sen University, Guangzhou, China
| | - Ying Sun
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, China
- International Center for Computational Method & Software, College of Physics, Jilin University, Changchun, China
| | - Shibo Xi
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, Singapore
| | - Yongxin Li
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
| | - Apoorva Chaturvedi
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Hong Kong SAR, China
| | - Bo Chen
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Gwang-Hyeon Nam
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Bing Li
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin, China
| | - Chongyi Ling
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Wei Zhai
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
| | - Zhenyu Shi
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Dianyi Hu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Vinay Sharma
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Zhaoning Hu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Hong Kong SAR, China
| | - Zhicheng Zhang
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University & Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, China
| | - Yifu Yu
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
- Institute of Molecular Plus, Tianjin University, Tianjin, China
| | - Xiao Renshaw Wang
- School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, Singapore
| | - Raju V Ramanujan
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Yanming Ma
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun, China
- International Center for Computational Method & Software, College of Physics, Jilin University, Changchun, China
- International Center of Future Science, Jilin University, Changchun, China
| | - Kedar Hippalgaonkar
- Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore.
- Institute of Materials Research and Engineering (IMRE), A*STAR (Agency for Science, Technology and Research), Singapore, Singapore.
| | - Hua Zhang
- Department of Chemistry, City University of Hong Kong, Hong Kong SAR, China.
- Hong Kong Branch of National Precious Metals Material Engineering Research Center (NPMM), City University of Hong Kong, Hong Kong SAR, China.
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China.
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21
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Deng Y, Li P, Zhu C, Zhou J, Wang X, Cui J, Yang X, Tao L, Zeng Q, Duan R, Fu Q, Zhu C, Xu J, Qu F, Yang C, Jing X, Lu L, Liu G, Liu Z. Controlled Synthesis of Mo xW 1-xTe 2 Atomic Layers with Emergent Quantum States. ACS NANO 2021; 15:11526-11534. [PMID: 34162202 DOI: 10.1021/acsnano.1c01441] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Recently, new states of matter like superconducting or topological quantum states were found in transition metal dichalcogenides (TMDs) and manifested themselves in a series of exotic physical behaviors. Such phenomena have been demonstrated to exist in a series of transition metal tellurides including MoTe2, WTe2, and alloyed MoxW1-xTe2. However, the behaviors in the alloy system have been rarely addressed due to their difficulty in obtaining atomic layers with controlled composition, albeit the alloy offers a great platform to tune the quantum states. Here, we report a facile CVD method to synthesize the MoxW1-xTe2 with controllable thickness and chemical composition ratios. The atomic structure of a monolayer MoxW1-xTe2 alloy was experimentally confirmed by scanning transmission electron microscopy. Importantly, two different transport behaviors including superconducting and Weyl semimetal states were observed in Mo-rich Mo0.8W0.2Te2 and W-rich Mo0.2W0.8Te2 samples, respectively. Our results show that the electrical properties of MoxW1-xTe2 can be tuned by controlling the chemical composition, demonstrating our controllable CVD growth method is an efficient strategy to manipulate the physical properties of TMDCs. Meanwhile, it provides a perspective on further comprehension and sheds light on the design of devices with topological multicomponent TMDC materials.
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Affiliation(s)
- Ya Deng
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Peiling Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Chao Zhu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jiadong Zhou
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Xiaowei Wang
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jian Cui
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xue Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Li Tao
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, China
| | - Qingsheng Zeng
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ruihuan Duan
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qundong Fu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chao Zhu
- School of Materials Science & Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jianbin Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, N.T., Hong Kong SAR, China
| | - Fanming Qu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Changli Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiunian Jing
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Li Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Guangtong Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zheng Liu
- CINTRA CNRS/NTU/THALES, UMI 3288, Singapore 637553, Singapore
- School of Materials Science and Engineering, School of Physical and Mathematical Science and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
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22
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Abstract
Abstract
Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface charge density by means of the electric-double-layer field-effect transistor (EDL-FET) architecture, and has been proven to be capable of tuning even the properties of metallic systems. In this short review, I summarize the main results which have been achieved so far in controlling the superconducting (SC) properties of thin films of conventional metallic superconductors by means of the ionic gating technique. I discuss how the gate-induced charge doping, despite being confined to a thin surface layer by electrostatic screening, results in a long-range ‘bulk’ modulation of the SC properties by the coherent nature of the SC condensate, as evidenced by the observation of suppressions in the critical temperature of films much thicker than the electrostatic screening length, and by the pronounced thickness-dependence of their magnitude. I review how this behavior can be modelled in terms of proximity effect between the charge-doped surface layer and the unperturbed bulk with different degrees of approximation, and how first-principles calculations have been employed to determine the origin of an anomalous increase in the electrostatic screening length at ultrahigh electric fields, thus fully confirming the validity of the proximity effect model. Finally, I discuss a general framework—based on the combination of ab-initio Density Functional Theory and the Migdal-Eliashberg theory of superconductivity—by which the properties of any gated thin film of a conventional metallic superconductor can be determined purely from first principles.
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23
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Bergeron H, Lebedev D, Hersam MC. Polymorphism in Post-Dichalcogenide Two-Dimensional Materials. Chem Rev 2021; 121:2713-2775. [PMID: 33555868 DOI: 10.1021/acs.chemrev.0c00933] [Citation(s) in RCA: 40] [Impact Index Per Article: 13.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.
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Affiliation(s)
- Hadallia Bergeron
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States.,Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States.,Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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24
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SnSe2-Zn-Porphyrin Nanocomposite Thin Films for Threshold Methane Concentration Detection at Room Temperature. CHEMOSENSORS 2020. [DOI: 10.3390/chemosensors8040134] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Nanocomposite thin films, sensitive to methane at the room temperature (25–30 °C), have been prepared, starting from SnSe2 powder and Zn(II)-5,10,15,20-tetrakis-(4-aminophenyl)- -porphyrin (ZnTAPP) powder, that were fully characterized by XRD, UV-VIS, FT-IR, Nuclear Magnetic Resonance (1H-NMR and 13C-NMR), Atomic Force Microscopy (AFM), SEM and Electron Paramagnetic Resonance (EPR) techniques. Film deposition was made by drop casting from a suitable solvent for the two starting materials, after mixing them in an ultrasonic bath. The thickness of these films were estimated from SEM images, and found to be around 1.3 μm. These thin films proved to be sensitive to a threshold methane (CH4) concentration as low as 1000 ppm, at a room temperature of about 25 °C, without the need for heating the sensing element. The nanocomposite material has a prompt and reproducible response to methane in the case of air, with 50% relative humidity (RH) as well. A comparison of the methane sensing performances of our new nanocomposite film with that of other recently reported methane sensitive materials is provided. It is suitable for signaling gas presence before reaching the critical lower explosion limit concentration of methane at 50,000 ppm.
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25
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Tebyetekerwa M, Zhang J, Xu Z, Truong TN, Yin Z, Lu Y, Ramakrishna S, Macdonald D, Nguyen HT. Mechanisms and Applications of Steady-State Photoluminescence Spectroscopy in Two-Dimensional Transition-Metal Dichalcogenides. ACS NANO 2020; 14:14579-14604. [PMID: 33155803 DOI: 10.1021/acsnano.0c08668] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors exhibit many important structural and optoelectronic properties, such as strong light-matter interactions, direct bandgaps tunable from visible to near-infrared regions, flexibility and atomic thickness, quantum-confinement effects, valley polarization possibilities, and so on. Therefore, they are regarded as a very promising class of materials for next-generation state-of-the-art nano/micro optoelectronic devices. To explore different applications and device structures based on 2D TMDs, intrinsic material properties, their relationships, and evolutions with fabrication parameters need to be deeply understood, very often through a combination of various characterization techniques. Among them, steady-state photoluminescence (PL) spectroscopy has been extensively employed. This class of techniques is fast, contactless, and nondestructive and can provide very high spatial resolution. Therefore, it can be used to obtain optoelectronic properties from samples of various sizes (from microns to centimeters) during the fabrication process without complex sample preparation. In this article, the mechanism and applications of steady-state PL spectroscopy in 2D TMDs are reviewed. The first part of this review details the physics of PL phenomena in semiconductors and common techniques to acquire and analyze PL spectra. The second part introduces various applications of PL spectroscopy in 2D TMDs. Finally, a broader perspective is discussed to highlight some limitations and untapped opportunities of PL spectroscopy in characterizing 2D TMDs.
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Affiliation(s)
- Mike Tebyetekerwa
- Research School of Electrical, Energy, and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Jian Zhang
- Research School of Electrical, Energy, and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Zhen Xu
- Department of Chemical Engineering, Imperial College London, London SW7 2AZ, United Kingdom
| | - Thien N Truong
- Research School of Electrical, Energy, and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Zongyou Yin
- Research School of Chemistry, College of Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- Research School of Electrical, Energy, and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Seeram Ramakrishna
- Department of Mechanical Engineering, National University of Singapore, Singapore 119260, Singapore
| | - Daniel Macdonald
- Research School of Electrical, Energy, and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Hieu T Nguyen
- Research School of Electrical, Energy, and Materials Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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26
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Mao Y, Ma X, Wu D, Lin C, Shan H, Wu X, Zhao J, Zhao A, Wang B. Interfacial Polarons in van der Waals Heterojunction of Monolayer SnSe 2 on SrTiO 3 (001). NANO LETTERS 2020; 20:8067-8073. [PMID: 33044080 DOI: 10.1021/acs.nanolett.0c02741] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Interfacial polarons have been demonstrated to play important roles in heterostructures containing polar substrates. However, most of polarons found so far are diffusive large polarons; the discovery and investigation of small polarons at interfaces are scarce. Herein, we report the emergence of interfacial polarons in monolayer SnSe2 epitaxially grown on Nb-doped SrTiO3 (STO) surface using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). ARPES spectra taken on this heterointerface reveal a nearly flat in-gap band correlated with a significant charge modulation in real space as observed with STM. An interfacial polaronic model is proposed to ascribe this in-gap band to the formation of self-trapped small polarons induced by charge accumulation and electron-phonon coupling at the van der Waals interface of SnSe2 and STO. Such a mechanism to form interfacial polaron is expected to generally exist in similar van der Waals heterojunctions consisting of layered 2D materials and polar substrates.
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Affiliation(s)
- Yahui Mao
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaochuan Ma
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Daoxiong Wu
- CAS Key Laboratory of Materials for Energy Conservation, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chen Lin
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Huan Shan
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiaojun Wu
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- CAS Key Laboratory of Materials for Energy Conservation, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jin Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- ICQD and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Aidi Zhao
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Bing Wang
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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27
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D’Olimpio G, Genuzio F, Menteş TO, Paolucci V, Kuo CN, Al Taleb A, Lue CS, Torelli P, Farías D, Locatelli A, Boukhvalov DW, Cantalini C, Politano A. Charge Redistribution Mechanisms in SnSe 2 Surfaces Exposed to Oxidative and Humid Environments and Their Related Influence on Chemical Sensing. J Phys Chem Lett 2020; 11:9003-9011. [PMID: 33035062 PMCID: PMC8015219 DOI: 10.1021/acs.jpclett.0c02616] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/26/2020] [Accepted: 10/01/2020] [Indexed: 06/11/2023]
Abstract
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a subnanometric SnO2 skin once exposed to air. Here, by means of surface-science spectroscopies and density functional theory, we have investigated the charge redistribution at the SnO2-SnSe2 heterojunction in both oxidative and humid environments. Explicitly, we find that the work function of the pristine SnSe2 surface increases by 0.23 and 0.40 eV upon exposure to O2 and air, respectively, with a charge transfer reaching 0.56 e-/SnO2 between the underlying SnSe2 and the SnO2 skin. Remarkably, both pristine SnSe2 and defective SnSe2 display chemical inertness toward water, in contrast to other metal chalcogenides. Conversely, the SnO2-SnSe2 interface formed upon surface oxidation is highly reactive toward water, with subsequent implications for SnSe2-based devices working in ambient humidity, including chemical sensors. Our findings also imply that recent reports on humidity sensing with SnSe2 should be reinterpreted, considering the pivotal role of the oxide skin in the interaction with water molecules.
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Affiliation(s)
- Gianluca D’Olimpio
- Department
of Physical and Chemical Sciences, University
of L’Aquila, via Vetoio, 67100 L’Aquila, AQ, Italy
| | - Francesca Genuzio
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
| | - Tevfik Onur Menteş
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
| | - Valentina Paolucci
- Department
of Industrial and Information Engineering and Economics, University of L’Aquila, Via G. Gronchi 18, I-67100 L’Aquila, Italy
| | - Chia-Nung Kuo
- Department
of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, 70101 Tainan, Taiwan
| | - Amjad Al Taleb
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
| | - Chin Shan Lue
- Department
of Physics, National Cheng Kung University, 1 Ta-Hsueh Road, 70101 Tainan, Taiwan
| | - Piero Torelli
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
- Consiglio
Nazionale delle Ricerche (CNR)-Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science
Park S.S. 14 km 163.5, 34149 Trieste, Italy
| | - Daniel Farías
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Instituto
‘Nicolás Cabrera’, Universidad Autónoma de Madrid, 28049 Madrid, Spain
- Condensed
Matter Physics Center (IFIMAC), Universidad
Autónoma de Madrid, 28049 Madrid, Spain
| | - Andrea Locatelli
- Elettra-Sincrotrone
S.C.p.A., S.S. 14-km 163.5 in AREA Science Park, 34149 Trieste, Italy
| | - Danil W. Boukhvalov
- College
of Science, Institute of Materials Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, P. R. China
- Theoretical
Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Ekaterinburg, Russia
| | - Carlo Cantalini
- Department
of Industrial and Information Engineering and Economics, University of L’Aquila, Via G. Gronchi 18, I-67100 L’Aquila, Italy
| | - Antonio Politano
- Department
of Physical and Chemical Sciences, University
of L’Aquila, via Vetoio, 67100 L’Aquila, AQ, Italy
- CNR-IMM
Istituto per la Microelettronica e Microsistemi, VIII strada 5, I-95121 Catania, Italy
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28
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Reddy BA, Ponomarev E, Gutiérrez-Lezama I, Ubrig N, Barreteau C, Giannini E, Morpurgo AF. Synthetic Semimetals with van der Waals Interfaces. NANO LETTERS 2020; 20:1322-1328. [PMID: 31874038 DOI: 10.1021/acs.nanolett.9b04810] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The assembly of suitably designed van der Waals (vdW) heterostructures represents a new approach to produce artificial systems with engineered electronic properties. Here, we apply this strategy to realize synthetic semimetals based on vdW interfaces formed by two different semiconductors. Guided by existing ab initio calculations, we select WSe2 and SnSe2 mono- and multilayers to assemble vdW interfaces and demonstrate the occurrence of semimetallicity by means of different transport experiments. Semimetallicity manifests itself in a finite minimum conductance upon sweeping the gate over a large range in ionic liquid gated devices, which also offer spectroscopic capabilities enabling the quantitative determination of the band overlap. The semimetallic state is additionally revealed in Hall effect measurements by the coexistence of electrons and holes, observed by either looking at the evolution of the Hall slope with sweeping the gate voltage or with lowering temperature. Finally, semimetallicity results in the low-temperature metallic conductivity of interfaces of two materials that are themselves insulating. These results demonstrate the possibility to implement a state of matter that had not yet been realized in vdW interfaces and represent a first step toward using these interfaces to engineer topological or excitonic insulating states.
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Affiliation(s)
- Bojja Aditya Reddy
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
- Group of Applied Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
| | - Evgeniy Ponomarev
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
- Group of Applied Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
| | - Ignacio Gutiérrez-Lezama
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
- Group of Applied Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
| | - Nicolas Ubrig
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
- Group of Applied Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
| | - Céline Barreteau
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
- Université Paris Est Creteil, CNRS, ICMPE, UMR 7182 , F-94320 , Thiais , France
| | - Enrico Giannini
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
- Group of Applied Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
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29
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Camargo Moreira ÓL, Cheng WY, Fuh HR, Chien WC, Yan W, Fei H, Xu H, Zhang D, Chen Y, Zhao Y, Lv Y, Wu G, Lv C, Arora SK, Ó Coileáin C, Heng C, Chang CR, Wu HC. High Selectivity Gas Sensing and Charge Transfer of SnSe 2. ACS Sens 2019; 4:2546-2552. [PMID: 31456397 DOI: 10.1021/acssensors.9b01461] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
SnSe2 is an anisotropic binary-layered material with rich physics, which could see it used for a variety of potential applications. Here, we investigate the gas-sensing properties of SnSe2 using first-principles calculations and verify predictions using a gas sensor made of few-layer SnSe2 grown by chemical vapor deposition. Theoretical simulations indicate that electrons transfer from SnSe2 to NO2, whereas the direction of charge transfer is the opposite for NH3. Notably, a flat molecular band appears around the Fermi energy after NO2 adsorption and the induced molecular band is close to the conduction band minimum. Moreover, compared with NH3, NO2 molecules adsorbed on SnSe2 have a lower adsorption energy and a higher charge transfer value. The dynamic-sensing responses of SnSe2 sensors confirm the theoretical predictions. The good match between the theoretical prediction and experimental demonstration suggests that the underlying sensing mechanism is related to the charge transfer and induced flat band. Our results provide a guideline for designing high-performance gas sensors based on SnSe2.
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Affiliation(s)
| | | | - Huei-Ru Fuh
- Department of Chemical Engineering & Materials Science, Yuan Ze University, Taoyuan City 320, Taiwan, ROC
| | | | - Wenjie Yan
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Haifeng Fei
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Hongjun Xu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Duan Zhang
- Elementary Educational College, Beijing Key Laboratory for Nano-Photonics and Nano-Structure, Capital Normal University, Beijing 100048, P. R. China
| | - Yanhui Chen
- Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
| | - Yanfeng Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yanhui Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Chengzhai Lv
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Sunil K. Arora
- Centre for Nano Science and Nano Technology, Panjab University, Chandigarh160014, India
| | - Cormac Ó Coileáin
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN) and Advanced Materials and Bioengineering Research (AMBER), School Chemistry, Trinity College Dublin, Dublin 2, Ireland
| | - Chenglin Heng
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | | | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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30
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Gao W, Zheng Z, Li Y, Zhao Y, Xu L, Deng H, Li J. High performance tin diselenide photodetectors dependent on thickness: a vertical graphene sandwiched device and interfacial mechanism. NANOSCALE 2019; 11:13309-13317. [PMID: 31270522 DOI: 10.1039/c9nr01966a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
In recent years, with the rapid development of transfer technologies related to graphene and other two-dimensional layered materials (2DLMs), graphene sandwiched 2DLMs have been confirmed to be outstanding tunneling and optoelectronic devices. Here, compared to the planar SnSe2-Au device, the SnSe2 device with different thicknesses (12-256 nm) is incorporated into graphene sandwiched structures for photodetection. The results indicate that the photoresponse properties are dependent on the thickness and gate voltage. In particular, under 532 nm illumination and at a Vg of +80 V, the SnSe2 device with a thickness of 96.5 nm shows an impressively high responsivity of 1.3 × 103 A W-1, an external quantum efficiency of 3 × 105%, and a detectivity of 1.2 × 1012 Jones. Besides, a high response speed (a rise time of 30.2 ms and a decay time of 27.2 ms) and flat photoswitching behavior are achieved without the gate voltage. In addition, the intrinsic mechanisms are further discussed through the relative spatial potential difference and the band alignment diagrams of the graphene-SnSe2-graphene and Au-SnSe2-Au structures. These findings indicate that SnSe2 has great potential for practical applications in next generation high performance optoelectronics.
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Affiliation(s)
- Wei Gao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Zhaoqiang Zheng
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Yongtao Li
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Yu Zhao
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China.
| | - Liang Xu
- Zhejiang Bright Semiconductor Technology Co. Ltd., Jinhua, Zhejiang 321000, P. R. China
| | - Huixiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
| | - Jingbo Li
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China. and State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, P. R. China.
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31
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Piatti E, Romanin D, Gonnelli RS. Mapping multi-valley Lifshitz transitions induced by field-effect doping in strained MoS 2 nanolayers. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:114002. [PMID: 30562728 DOI: 10.1088/1361-648x/aaf981] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Gate-induced superconductivity at the surface of nanolayers of semiconducting transition metal dichalcogenides (TMDs) has attracted a lot of attention in recent years, thanks to the sizeable transition temperature, robustness against in-plane magnetic fields beyond the Pauli limit, and hints to a non-conventional nature of the pairing. A key information necessary to unveil its microscopic origin is the geometry of the Fermi surface hosting the Cooper pairs as a function of field-effect doping, which is dictated by the filling of the inequivalent valleys at the K/K[Formula: see text] and Q/Q[Formula: see text] points of the Brillouin zone. Here, we achieve this by combining density functional theory calculations of the bandstructure with transport measurements on ion-gated 2H-MoS2 nanolayers. We show that, when the number of layers and the amount of strain are set to their experimental values, the Fermi level crosses the bottom of the high-energy valleys at Q/Q[Formula: see text] at doping levels where characteristic kinks in the transconductance are experimentally detected. We also develop a simple 2D model which is able to quantitatively describe the broadening of the kinks observed upon increasing temperature. We demonstrate that this combined approach can be employed to map the dependence of the Fermi surface of TMD nanolayers on field-effect doping, detect Lifshitz transitions, and provide a method to determine the amount of strain and spin-orbit splitting between sub-bands from electric transport measurements in real devices.
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Affiliation(s)
- Erik Piatti
- Department of Applied Science and Technology, Politecnico di Torino, 10129 Torino, Italy
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Zhang E, Zhi J, Zou YC, Ye Z, Ai L, Shi J, Huang C, Liu S, Lin Z, Zheng X, Kang N, Xu H, Wang W, He L, Zou J, Liu J, Mao Z, Xiu F. Signature of quantum Griffiths singularity state in a layered quasi-one-dimensional superconductor. Nat Commun 2018; 9:4656. [PMID: 30405120 PMCID: PMC6220168 DOI: 10.1038/s41467-018-07123-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/02/2018] [Accepted: 10/18/2018] [Indexed: 11/08/2022] Open
Abstract
Quantum Griffiths singularity was theoretically proposed to interpret the phenomenon of divergent dynamical exponent in quantum phase transitions. It has been discovered experimentally in three-dimensional (3D) magnetic metal systems and two-dimensional (2D) superconductors. But, whether this state exists in lower dimensional systems remains elusive. Here, we report the signature of quantum Griffiths singularity state in quasi-one-dimensional (1D) Ta2PdS5 nanowires. The superconducting critical field shows a strong anisotropic behavior and a violation of the Pauli limit in a parallel magnetic field configuration. Current-voltage measurements exhibit hysteresis loops and a series of multiple voltage steps in transition to the normal state, indicating a quasi-1D nature of the superconductivity. Surprisingly, the nanowire undergoes a superconductor-metal transition when the magnetic field increases. Upon approaching the zero-temperature quantum critical point, the system uncovers the signature of the quantum Griffiths singularity state arising from enhanced quenched disorders, where the dynamical critical exponent becomes diverging rather than being constant.
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Affiliation(s)
- Enze Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Jinhua Zhi
- Bejing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, 100871, Beijing, China
| | - Yi-Chao Zou
- Materials Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD, 4072, Australia
| | - Zefang Ye
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Linfeng Ai
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Jiacheng Shi
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Ce Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Shanshan Liu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Zehao Lin
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Xinyuan Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China
| | - Ning Kang
- Bejing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, 100871, Beijing, China
| | - Hongqi Xu
- Bejing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, 100871, Beijing, China
| | - Wei Wang
- School of Electronics Science and Engineering, Nanjing University, 210093, Nanjing, China
| | - Liang He
- School of Electronics Science and Engineering, Nanjing University, 210093, Nanjing, China
| | - Jin Zou
- Materials Engineering, The University of Queensland, Brisbane, QLD, 4072, Australia
- Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane, QLD, 4072, Australia
| | - Jinyu Liu
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA
| | - Zhiqiang Mao
- Department of Physics and Engineering Physics, Tulane University, New Orleans, LA, 70118, USA
| | - Faxian Xiu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, 200433, Shanghai, China.
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, 200433, Shanghai, China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China.
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Takahide Y, Sasama Y, Takeya H, Takano Y, Kageura T, Kawarada H. Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2018; 89:103903. [PMID: 30399867 DOI: 10.1063/1.5041936] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2018] [Accepted: 09/21/2018] [Indexed: 06/08/2023]
Abstract
The ionic-liquid-gating technique can be applied to the search for novel physical phenomena at low temperatures because of its wide controllability of the charge carrier density. Ionic-liquid-gated field-effect transistors are often fragile upon cooling, however, because of the large difference between the thermal expansion coefficients of frozen ionic liquids and solid target materials. In this paper, we provide a practical technique for setting up ionic-liquid-gated field-effect transistors for low-temperature measurements. It allows stable measurements and reduces the electronic inhomogeneity by reducing the shear strain generated in frozen ionic liquid.
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Affiliation(s)
- Yamaguchi Takahide
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Yosuke Sasama
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Hiroyuki Takeya
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
| | - Yoshihiko Takano
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Japan
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