Superconductor-Insulator Transitions in Exfoliated Bi2Sr2CaCu2O8+δ Flakes

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm-2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS2 transistors exhibiting high on/off current ratios over 108, ultralow subthreshold swing of 65 mV dec-1 and ultralow leakage current density of ~10-6 A cm-2. Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor-insulator transition at the clean-limit Bi2Sr2CaCu2O8+δ can also be realized through fluoride gating. Our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

Vortex entropy and superconducting fluctuations in ultrathin underdoped Bi2Sr2CaCu2O8+x superconductor

Vortices in superconductors can help identify emergent phenomena but certain fundamental aspects of vortices, such as their entropy, remain poorly understood. Here, we study the vortex entropy in underdoped Bi2Sr2CaCu2O8+x by measuring both magneto-resistivity and Nernst effect on ultrathin flakes (≤2 unit-cell). We extract the London penetration depth from the magneto-transport measurements on samples with different doping levels. It reveals that the superfluid phase stiffness ρs scales linearly with the superconducting transition temperature Tc, down to the extremely underdoped case. On the same batch of ultrathin flakes, we measure the Nernst effect via on-chip thermometry. Together, we obtain the vortex entropy and find that it decays exponentially with Tc or ρs. We further analyze the Nernst signal above Tc in the framework of Gaussian superconducting fluctuations. The combination of electrical and thermoelectric measurements in the two-dimensional limit provides fresh insight into high temperature superconductivity.

High-temperature Josephson diode

Many superconducting systems with broken time-reversal and inversion symmetry show a superconducting diode effect, a non-reciprocal phenomenon analogous to semiconducting p-n-junction diodes. While the superconducting diode effect lays the foundation for realizing ultralow dissipative circuits, Josephson-phenomena-based diode effect (JDE) can enable the realization of protected qubits. The superconducting diode effect and JDE reported thus far are at low temperatures (~4 K), limiting their applications. Here we demonstrate JDE persisting up to 77 K using an artificial Josephson junction of twisted layers of Bi2Sr2CaCu2O8+δ. JDE manifests as an asymmetry in the magnitude and distributions of switching currents, attaining the maximum at 45° twist. The asymmetry is induced by and tunable with a very small magnetic field applied perpendicular to the junction and arises due to interaction between Josephson and Abrikosov vortices. We report a large asymmetry of 60% at 20 K. Our results provide a path towards realizing superconducting Josephson circuits at liquid-nitrogen temperature.

Optically Probing Unconventional Superconductivity in Atomically Thin Bi2Sr2Ca0.92Y0.08Cu2O8+δ

Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to that of the bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here, we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi2Sr2Ca0.92Y0.08Cu2O8+δ (Y-Bi2212). Apart from finding an optical response due to the superconducting phase transition that is similar to that of bulk Y-Bi2212, we observe that the sign and amplitude of the pump-probe signal in atomically thin flakes vary significantly in different dielectric environments depending on the nature of the optical excitation. By exploiting the spatial resolution of the optical probe, we uncover the exceptional sensitivity of monolayer Y-Bi2212 to the environment. Our results provide the first optical evidence for the intralayer nature of the superconducting condensate in Bi2212 and highlight the role of double-sided encapsulation in preserving superconductivity in atomically thin cuprates.

Time-reversal symmetry breaking superconductivity between twisted cuprate superconductors

Twisted interfaces between stacked van der Waals (vdW) cuprate crystals present a platform for engineering superconducting order parameters by adjusting stacking angles. Using a cryogenic assembly technique, we construct twisted vdW Josephson junctions (JJs) at atomically sharp interfaces between Bi2Sr2CaCu2O8+x crystals, with quality approaching the limit set by intrinsic JJs. Near 45° twist angle, we observe fractional Shapiro steps and Fraunhofer patterns, consistent with the existence of two degenerate Josephson ground states related by time-reversal symmetry (TRS). By programming the JJ current bias sequence, we controllably break TRS to place the JJ into either of the two ground states, realizing reversible Josephson diodes without external magnetic fields. Our results open a path to engineering topological devices at higher temperatures.

Recent Advances in Moiré Superlattice Systems by Angle-Resolved Photoemission Spectroscopy

The last decade has witnessed a flourish in 2D materials including graphene and transition metal dichalcogenides (TMDs) as atomic-scale Legos. Artificial moiré superlattices via stacking 2D materials with a twist angle and/or a lattice mismatch have recently become a fertile playground exhibiting a plethora of emergent properties beyond their building blocks. These rich quantum phenomena stem from their nontrivial electronic structures that are effectively tuned by the moiré periodicity. Modern angle-resolved photoemission spectroscopy (ARPES) can directly visualize electronic structures with decent momentum, energy, and spatial resolution, thus can provide enlightening insights into fundamental physics in moiré superlattice systems and guides for designing novel devices. In this review, first, a brief introduction is given on advanced ARPES techniques and basic ideas of band structures in a moiré superlattice system. Then ARPES research results of various moiré superlattice systems are highlighted, including graphene on substrates with small lattice mismatches, twisted graphene/TMD moiré systems, and high-order moiré superlattice systems. Finally, it discusses important questions that remain open, challenges in current experimental investigations, and presents an outlook on this field of research.

Prominent Josephson tunneling between twisted single copper oxide planes of Bi2Sr2-xLaxCuO6+y

Josephson tunneling in twisted cuprate junctions provides a litmus test for the pairing symmetry, which is fundamental for understanding the microscopic mechanism of high temperature superconductivity. This issue is rekindled by experimental advances in van der Waals stacking and the proposal of an emergent d+id-wave. So far, all experiments have been carried out on Bi2Sr2CaCu2O8+x (Bi-2212) with double CuO2 planes but show controversial results. Here, we investigate junctions made of Bi2Sr2-xLaxCuO6+y (Bi-2201) with single CuO2 planes. Our on-site cold stacking technique ensures uncompromised crystalline quality and stoichiometry at the interface. Junctions with carefully calibrated twist angles around 45° show strong Josephson tunneling and conventional temperature dependence. Furthermore, we observe standard Fraunhofer diffraction patterns and integer Fiske steps in a junction with a twist angle of 45.0±0.2°. Together, these results pose strong constraints on the d or d+id-wave pairing and suggest an indispensable isotropic pairing component.

Modulations in Superconductors: Probes of Underlying Physics

The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.

Andreev Reflection and Klein Tunneling in High-Temperature Superconductor-Graphene Junctions

Scattering processes in quantum materials emerge as resonances in electronic transport, including confined modes, Andreev states, and Yu-Shiba-Rusinov states. However, in most instances, these resonances are driven by a single scattering mechanism. Here, we show the appearance of resonances due to the combination of two simultaneous scattering mechanisms, one from superconductivity and the other from graphene p-n junctions. These resonances stem from Andreev reflection and Klein tunneling that occur at two different interfaces of a hole-doped region of graphene formed at the boundary with superconducting graphene due to proximity effects from Bi_{2}Sr_{2}Ca_{1}Cu_{2}O_{8+δ}. The resonances persist with gating from p^{+}-p and p-n configurations. The suppression of the oscillation amplitude above the bias energy which is comparable to the induced superconducting gap indicates the contribution from Andreev reflection. Our experimental measurements are supported by quantum transport calculations in such interfaces, leading to analogous resonances. Our results put forward a hybrid scattering mechanism in graphene-high-temperature superconductor heterojunctions of potential impact for graphene-based Josephson junctions.

Manipulating high-temperature superconductivity by oxygen doping in Bi2Sr2CaCu2O8+δ thin flakes

Harnessing the fascinating properties of correlated oxides requires precise control of their carrier density. Compared to other methods, oxygen doping provides an effective and more direct way to tune the electronic properties of correlated oxides. Although several approaches, such as thermal annealing and oxygen migration, have been introduced to change the oxygen content, a continuous and reversible solution that can be integrated with modern electronic technology is much in demand. Here, we report a novel ionic field-effect transistor using solid Gd-doped CeO2 as the gate dielectric, which shows a remarkable carrier-density-tuning ability via electric-field-controlled oxygen concentration at room temperature. In Bi2Sr2CaCu2O8+δ (Bi-2212) thin flakes, we achieve a reversible superconductor-insulator transition by driving oxygen ions in and out of the samples with electric fields, and map out the phase diagram all the way from the insulating regime to the over-doped superconducting regime by continuously changing the oxygen doping level. Scaling analysis indicates that the reversible superconductor-insulator transition for the Bi-2212 thin flakes follows the theoretical description of a two-dimensional quantum phase transition. Our work provides a route for realizing electric-field control of phase transition in correlated oxides. Moreover, the configuration of this type of transistor makes heterostructure/interface engineering possible, thus having the potential to serve as the next-generation all-solid-state field-effect transistor.

Homogeneous Lateral Lithium Intercalation into Transition Metal Dichalcogenides via Ion Backgating

Lithium intercalation has become a versatile tool for realizing emergent quantum phenomena in two-dimensional (2D) materials. However, the insertion of lithium ions may be accompanied by the creation of wrinkles and cracks, which prevents the material from manifesting its intrinsic properties under substantial charge injection. By using the recently developed ion backgating technique, we successfully realize lateral intercalation in 1T-TiSe₂ and 2H-NbSe₂, which shows substantially improved sample homogeneity. The homogeneity at high lithium doping is not only demonstrated via low-temperature transport measurements but also directly visualized by topographical imaging through in situ atomic force microscopy (AFM). The application of lateral intercalation to a broad spectrum of 2D materials can greatly facilitate the search for exotic quantum phenomena.

Little-Parks like oscillations in lightly doped cuprate superconductors

Understanding the rich and competing electronic orders in cuprate superconductors may provide important insight into the mechanism of high-temperature superconductivity. Here, by measuring Bi₂Sr₂CaCu₂O_8+x in the extremely underdoped regime, we obtain evidence for a distinct type of ordering, which manifests itself as resistance oscillations at low magnetic fields (≤10 T) and at temperatures around the superconducting transition. By tuning the doping level p continuously, we reveal that these low-field oscillations occur only when p < 0.1. The oscillation amplitude increases with decreasing p but the oscillation period stays almost constant. We show that these low-field oscillations can be well described by assuming a periodic superconducting structure with a mesh size of about 50 nm. Such a charge order, which is distinctly different from the well-established charge density wave and pair density wave, seems to be an unexpected piece of the puzzle on the correlated physics in cuprates.

Understanding the rich electronic orders in cuprate superconductors provide insights into the mechanism of high-temperature superconductivity. Here, the authors report a distinct charge order with Little-Parks like resistance oscillations at magnetic fields up to 10 T and around T_c in lightly doped Bi₂Sr₂CaCu₂O_8+x.

Ising pairing in atomically thin superconductors

Ising-type pairing in atomically thin superconducting materials has emerged as a novel means of generating devices with resilience to a magnetic field applied parallel to the two-dimensional (2D) plane. In this mini-review, we canvas the state of the field by giving a historical account of 2D superconductors with strongly enhanced in-plane upper critical fields, together with the type-I and type-II Ising pairing mechanisms. We highlight the vital role of spin-orbit coupling in these superconductors and discuss other effects such as symmetry breaking, atomic thicknesses, etc. Finally, we summarize the recent theoretical proposals and highlight the open questions, such as exploring topological superconductivity in these systems and looking for more materials with Ising pairing.

Coexistence of resistance oscillations and the anomalous metal phase in a lithium intercalated TiSe2 superconductor

Superconductivity and charge density wave (CDW) appear in the phase diagram of a variety of materials including the high-T_c cuprate family and many transition metal dichalcogenides (TMDs). Their interplay may give rise to exotic quantum phenomena. Here, we show that superconducting arrays can spontaneously form in TiSe₂–a TMD with coexisting superconductivity and CDW—after lithium ion intercalation. We induce a superconducting dome in the phase diagram of Li_xTiSe₂ by using the ionic solid-state gating technique. Around optimal doping, we observe magnetoresistance oscillations, indicating the emergence of periodically arranged domains. In the same temperature, magnetic field and carrier density regime where the resistance oscillations occur, we observe signatures for the anomalous metal—a state with a resistance plateau across a wide temperature range below the superconducting transition. Our study not only sheds further insight into the mechanism for the periodic electronic structure, but also reveals the interplay between the anomalous metal and superconducting fluctuations.

The interplay between superconductivity and charge density wave (CDW) gives rise to exotic quantum phenomena. Here, the authors observe magnetoresistance oscillations and an anomalous metal state due to the coexistence of superconductivity and CDW in lithium intercalated TiSe₂.

Indium-contacted van der Waals gap tunneling spectroscopy for van der Waals layered materials

The electrical phase transition in van der Waals (vdW) layered materials such as transition-metal dichalcogenides and Bi₂Sr₂CaCu₂O_8+x (Bi-2212) high-temperature superconductor has been explored using various techniques, including scanning tunneling and photoemission spectroscopies, and measurements of electrical resistance as a function of temperature. In this study, we develop one useful method to elucidate the electrical phases in vdW layered materials: indium (In)-contacted vdW tunneling spectroscopy for 1T-TaS₂, Bi-2212 and 2H-MoS₂. We utilized the vdW gap formed at an In/vdW material interface as a tunnel barrier for tunneling spectroscopy. For strongly correlated electron systems such as 1T-TaS₂ and Bi-2212, pronounced gap features corresponding to the Mott and superconducting gaps were respectively observed at T = 4 K. We observed a gate dependence of the amplitude of the superconducting gap, which has potential applications in a gate-tunable superconducting device with a SiO₂/Si substrate. For In/10 nm-thick 2H-MoS₂ devices, differential conductance shoulders at bias voltages of approximately ± 0.45 V were observed, which were attributed to the semiconducting gap. These results show that In-contacted vdW gap tunneling spectroscopy in a fashion of field-effect transistor provides feasible and reliable ways to investigate electronic structures of vdW materials.

Two-Dimensional Bi2Sr2CaCu2O8+δ Nanosheets for Ultrafast Photonics and Optoelectronics

Two-dimensional (2D) Bi₂Sr₂CaCu₂O_8+δ (BSCCO) is a emerming class of 2D materials with high-temperature superconductivity for which their electronic transport properties have been intensively studied. However, the optical properties, especially nonlinear optical response and the photonic and optoelectronic applications of normal state 2D Bi₂Sr₂CaCu₂O_8+δ (Bi-2212), have been largely unexplored. Here, the linear and nonlinear optical properties of mechanically exfoliated Bi-2212 thin flakes are systematically investigated. 2D Bi-2212 shows a profound plasmon absorption in near-infrared wavelength range with ultrafast carrier dynamics as well as tunable nonlinear absorption depending on the thickness. We demonstrated that 2D Bi-2212 can be applied not only as an effective mode-locker for ultrashort pulse generation but also as an active medium for infrared light detection due to its plasmon absorption. Our results may trigger follow up studies on the optical properties of 2D BSCCO and demonstrate potential opportunities for photonic and optoelectronic applications.

Recent Advances in 2D Superconductors

The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (T_c ), continuous phase transition, and enhanced parallel critical magnetic field (B_c ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-T_c superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced B_c , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

Atomically Thin Superconductors

In recent years, atomically thin superconductors, including atomically thin elemental superconductors, single layer FeSe films, and few-layer cuprate superconductors, have been studied extensively. This hot research field is mainly driven by the discovery of significant superconductivity enhancement and high-temperature interface superconductivity in single-layer FeSe films epitaxially grown on SrTiO₃ substrates in 2012. This study has attracted tremendous research interest and generated more studies focusing on further enhancing superconductivity and finding the origin of the superconductivity. A few years later, research on atomically thin superconductors has extended to cuprate superconductors, unveiling many intriguing properties that have neither been proposed or observed previously. These new discoveries challenge the current theory regarding the superconducting mechanism of unconventional superconductors and indicate new directions on how to achieve high-transition-temperature superconductors. Herein, this exciting recent progress is briefly discussed, with a focus on the recent progress in identifying new atomically thin superconductors.

On-Demand Local Modification of High-Tc Superconductivity in Few Unit-Cell Thick Bi2 Sr2 CaCu2 O8+δ

High-temperature superconductors (HTSs) are important for potential applications and for understanding the origin of strong correlations. Bi₂ Sr₂ CaCu₂ O_8+δ (BSCCO), a van der Waals material, offers a platform to probe the physics down to a unit-cell. Guiding the flow of electrons by patterning 2DEGS and oxide heterostructures has brought new functionality and access to new science. Similarly, modifying superconductivity in HTS locally, on a small length scale, is of immense interest for superconducting electronics. A route to modify superconductivity locally by depositing metal on the surface is reported here by transport studies on few unit-cell thick BSCCO. Deposition of chromium (Cr) on the surface over a selected area of BSCCO results in insulating behavior of the underlying region. Cr locally depletes oxygen in CuO₂ planes and disrupts the superconductivity in the layers below. This technique of modifying superconductivity is suitable for making sub-micrometer superconducting wires and more complex superconducting devices.

Facile deterministic cutting of 2D materials for twistronics using a tapered fibre scalpel

We present a quick and reliable method to cut 2D materials for creating 2D twisted heterostructures and devices. We demonstrate the effectiveness of using a tapered fibre scalpel for cutting graphene. Electrical transport measurements show evidence of the desired twist between the graphene layers fabricated using our technique. Statistics of the number of successfully twisted stacks made using our method is compared with h-BN assisted tear-and-stack method. Also, our method can be used for twisted stack fabrication of materials that are few nanometers thick. Finally, we demonstrate the versatility of the tapered fibre scalpel for other shaping related applications for sensitive 2D materials.

Reversible Superconductor-Insulator Transition in (Li, Fe)OHFeSe Flakes Visualized by Gate-Tunable Scanning Tunneling Spectroscopy

Electric field control of charge carrier density provides a key in situ technology to continuously tune the ground states and map out the phase diagram of correlated electron systems in one device. This technique is highly expected to be combined with the modern state-of-the art spectroscopic probes, such as angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy (STM/S), to efficiently address these states and the underlying physics. However, it is extremely difficult and not successful so far, mainly because the fabrication process of such devices makes them prohibitive for surface probes. Here, by using a solid Li-ion conductor (SIC) as gate dielectric, we have successfully developed gate-tunable STM/S and visualized the superconductor-insulator transition (SIT) in a thin flake of single crystal (Li, Fe)OHFeSe at the nanoscale. The gate-controlled Li-ion injection first enhances the superconductivity and then drives the flake into an inhomogeneous insulating state, where superconductivity is totally suppressed. This process can be reversed by applying an opposite gate voltage. Importantly, the atomically resolved images allow us to identify the critical role that the injected Li ions play in the tuning process. Our results not only provide clear evidence of the microscopic mechanism of the tunable superconductivity and SIT in the SIC-based (Li, Fe)OHFeSe devices, but also establish SIC-gating STM as a powerful tool for investigating the complicated phase diagram of correlated electron system spectroscopically in a single sample with the field-effect approach.

Introducing Electrode Contact by Controlled Micro-Alloying in Few-Layered GaTe Field Effect Transistors

Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes for device applications. Here, we report a method on fabricating electrode contacts to few-layered GaTe field effect transistors (FETs) by controlled micro-alloying. The devices show linear I-V curves and on/off ratio of ∼10 4 on HfO 2 substrates. Kelvin probe force microscope (KPFM) and energy dispersion spectrum (EDS) are performed to characterize the electrode contacts, suggesting that the lowered Schottky barrier by the diffusion of Pd element into the GaTe conduction channel may play an important role. Our findings provide a strategy for the engineering of electrode contact for future device applications based on 2DLMs.

Film-thickness-driven superconductor to insulator transition in cuprate superconductors

The superconductor-insulator transition induced by film thickness control is investigated for the optimally doped cuprate superconductor La_1.85Sr_0.15CuO₄. Epitaxial thin films are grown on an almost exactly matched substrate LaAlO₃ (001). Despite the wide thickness range of 6 nm to 300 nm, all films are grown coherently without significant relaxation of the misfit strain. Electronic transport measurement exhibits systematic suppression of the superconducting phase by reducing the film thickness, thereby inducing a superconductor-insulator transition at a critical thickness of ~10 nm. The emergence of a resistance peak preceding the superconducting transition is discussed based on the weak localization. X-ray photoelectron spectroscopy results show the possibility that oxygen vacancies are present near the interface.

Ionic Liquid Gating Induced Protonation of Electron-Doped Cuprate Superconductors

Ion injection controlled by electric field has attracted growing attention due to its tunability over bulk-like materials. Here, we achieve protonation of an electron-doped high-temperature superconductor, La_2-xCe_xCuO₄, by gating in the electrochemical regime of the ionic liquid. Such a process induces a superconductor-insulator transition together with the crossing of the Fermi surface reconstruction point. Applying negative voltages not only can reverse the protonation process but also recovers superconductivity in samples deteriorated by moisture in the ambient. Our work extends the application of electric-field-induced protonation into high-temperature cuprate superconductors.

High-temperature superconductivity in monolayer Bi2Sr2CaCu2O8+δ

Although copper oxide high-temperature superconductors constitute a complex and diverse material family, they all share a layered lattice structure. This curious fact prompts the question of whether high-temperature superconductivity can exist in an isolated monolayer of copper oxide, and if so, whether the two-dimensional superconductivity and various related phenomena differ from those of their three-dimensional counterparts. The answers may provide insights into the role of dimensionality in high-temperature superconductivity. Here we develop a fabrication process that obtains intrinsic monolayer crystals of the high-temperature superconductor Bi₂Sr₂CaCu₂O_8+δ (Bi-2212; here, a monolayer refers to a half unit cell that contains two CuO₂ planes). The highest superconducting transition temperature of the monolayer is as high as that of optimally doped bulk. The lack of dimensionality effect on the transition temperature defies expectations from the Mermin-Wagner theorem, in contrast to the much-reduced transition temperature in conventional two-dimensional superconductors such as NbSe₂. The properties of monolayer Bi-2212 become extremely tunable; our survey of superconductivity, the pseudogap, charge order and the Mott state at various doping concentrations reveals that the phases are indistinguishable from those in the bulk. Monolayer Bi-2212 therefore displays all the fundamental physics of high-temperature superconductivity. Our results establish monolayer copper oxides as a platform for studying high-temperature superconductivity and other strongly correlated phenomena in two dimensions.

Mapping Dynamical Magnetic Responses of Ultrathin Micron-Size Superconducting Films Using Nitrogen-Vacancy Centers in Diamond

Two-dimensional superconductors have attracted growing interest because of their scientific novelty, structural tunability, and useful properties. Studies of their magnetic responses, however, are often hampered by difficulties to grow large-size samples of high quality and uniformity. We report here an imaging method that employed NV^- centers in diamond as a sensor capable of mapping out the microwave magnetic field distribution on an ultrathin superconducting film of micron size. Measurements on a 33 nm thick film and a 125 nm thick bulklike film of Bi₂Sr₂CaCu₂O_8+δ revealed that the alternating current (ac) Meissner effect (or repulsion of ac magnetic field) set in at 78 and 91 K, respectively; the latter was the superconducting transition temperature of both films. The unusual ac magnetic response of the thin film presumably was due to thermally excited vortex-antivortex diffusive motion in the film. Spatial resolution of our ac magnetometer was limited by optical diffraction and the noise level was at 14 μT/Hz^1/2. The technique could be extended with better detection sensitivity to extract local ac conductivity/susceptibility of ultrathin or monolayer superconducting samples as well as ac magnetic responses of other two-dimensional exotic thin films of limited lateral size.