Experimental Identification of Critical Condition for Drastically Enhancing Thermoelectric Power Factor of Two-Dimensional Layered Materials

Principles and Methods for Improving the Thermoelectric Performance of SiC: A Potential High-Temperature Thermoelectric Material

Thermoelectric materials that can convert thermal energy to electrical energy are stable and long-lasting and do not emit greenhouse gases; these properties render them useful in novel power generation devices that can conserve and utilize lost heat. SiC exhibits good mechanical properties, excellent corrosion resistance, high-temperature stability, non-toxicity, and environmental friendliness. It can withstand elevated temperatures and thermal shock and is well suited for thermoelectric conversions in high-temperature and harsh environments, such as supersonic vehicles and rockets. This paper reviews the potential of SiC as a high-temperature thermoelectric and third-generation wide-bandgap semiconductor material. Recent research on SiC thermoelectric materials is reviewed, and the principles and methods for optimizing the thermoelectric properties of SiC are discussed. Thus, this paper may contribute to increasing the application potential of SiC for thermoelectric energy conversion at high temperatures.

Electrically tunable giant Nernst effect in two-dimensional van der Waals heterostructures

The Nernst effect, a transverse thermoelectric phenomenon, has attracted significant attention for its potential in energy conversion, thermoelectrics and spintronics. However, achieving high performance and versatility at low temperatures remains elusive. Here we demonstrate a large and electrically tunable Nernst effect by combining the electrical properties of graphene with the semiconducting characteristics of indium selenide in a field-effect geometry. Our results establish a new platform for exploring and manipulating this thermoelectric effect, showcasing the first electrical tunability with an on/off ratio of 103. Moreover, photovoltage measurements reveal a stronger photo-Nernst signal in the graphene/indium selenide heterostructure compared with individual components. Remarkably, we observe a record-high Nernst coefficient of 66.4 μV K-1 T-1 at ultralow temperatures and low magnetic fields, an important step towards applications in quantum information and low-temperature emergent phenomena.

Reveal long-lived hot electrons in 2D indium selenide and ferroelectric-regulated carrier dynamics of InSe/α-In2Se3/InSe heterostructure

As typical representatives of group III chalcogenides, InSe, α-In2Se3, and β'-In2Se3 have drawn considerable interest in the domain of photoelectrochemistry. However, the microscopic mechanisms of carrier dynamics in these systems remain largely unexplored. In this work, we first reveal that hot electrons in the three systems have different cooling rate stages and long-lived hot electrons, through the utilization of density functional theory calculations and nonadiabatic molecular dynamics simulations. Furthermore, the ferroelectric polarization of α-In2Se3 weakens the nonadiabatic coupling of the nonradioactive recombination, successfully competing with the narrow bandgap and slow dephasing process, and achieving both high optical absorption efficiency and long carrier lifetime. In addition, we demonstrate that the ferroelectric polarization of α-In2Se3 not only enables the formation of the double type-II band alignment in the InSe/α-In2Se3/InSe heterostructure, with the top and bottom InSe sublayers acting as acceptors and donors, respectively, but also eliminates the hindrance of the built-in electric field at the interface, facilitating an ultrafast interlayer carrier transfer in the heterojunction. This work establishes an atomic mechanism of carrier dynamics in InSe, α-In2Se3, and β'-In2Se3 and the regulatory role of the ferroelectric polarization on the charge carrier dynamics, providing a guideline for the design of photoelectronic materials.

Effects of quantum size on the thermoelectric properties of bismuth

First principles and the Boltzmann transport equation have been combined to investigate the effects of quantum size L/λ, the ratio of quantum confinement length L to thermal de Broglie wavelength λ, on the thermoelectric properties of 2D β-bismuth. It is revealed that the thermoelectric properties of 2D β-bismuth are highly influenced by quantum size, especially when the L/λ is less than 0.1. Specifically, the Seebeck coefficients of both electrons and holes decrease as the L/λ ratio increases, while the electrical and thermal conductivity show the opposite trend. The results also show that 2D bismuth with three or more layers has semimetal properties, with the first observation of a semiconductor-semimetal transition in 2D bismuth. Moreover, the electron affinity, ionization energy, and work function of 2D β-bismuth do not exhibit a significant variation or trend with quantum size effects. The detailed electronic structures provide a fundamental understanding of the thermoelectric properties of bismuth, and the obtained results may provide a deep understanding of the relationship between the quantum size and the thermoelectric properties of 2D β-bismuth.

Self-powered and broadband opto-sensor with bionic visual adaptation function based on multilayer γ-InSe flakes

Visual adaptation that can autonomously adjust the response to light stimuli is a basic function of artificial visual systems for intelligent bionic robots. To improve efficiency and reduce complexity, artificial visual systems with integrated visual adaptation functions based on a single device should be developed to replace traditional approaches that require complex circuitry and algorithms. Here, we have developed a single two-terminal opto-sensor based on multilayer γ-InSe flakes, which successfully emulated the visual adaptation behaviors with a new working mechanism combining the photo-pyroelectric and photo-thermoelectric effect. The device can operate in self-powered mode and exhibit good human-eye-like adaptation behaviors, which include broadband light-sensing image adaptation (from ultraviolet to near-infrared), near-complete photosensitivity recovery (99.6%), and synergetic visual adaptation, encouraging the advancement of intelligent opto-sensors and machine vision systems.

Carrier and phonon transport in 2D InSe and its Janus structures

Recently, two-dimensional (2D) Indium Selenide (InSe) has been receiving much attention in the scientific community due to its reduced size, extraordinary physical properties, and potential applications in various fields. In this review, we discussed the recent research advancement in the carrier and phonon transport properties of 2D InSe and its related Janus structures. We first introduced the progress in the synthesis of 2D InSe. We summarized the recent experimental and theoretical works on the carrier mobility, thermal conductivity, and thermoelectric characteristics of 2D InSe. Based on the Boltzmann transport equation (BTE), the mechanisms underlying carrier or phonon scattering of 2D InSe were discussed in detail. Moreover, the structural and transport properties of Janus structures based on InSe were also presented, with an emphasis on the theoretical simulations. At last, we discussed the prospects for continued research of 2D InSe.

High thermoelectric performance of two-dimensional layered AB2Te4 (A = Sn, Pb; B = Sb, Bi) ternary compounds

The thermoelectric properties of two-dimensional layered ternary compounds AB₂Te₄, in which A (Sn, Pb) and B(Sb, Bi) are group-IV and group-V cations, respectively, were investigated by using first-principles based transport theory. These septuple-atom-layer monolayers have wider band gaps with respect to their bulks, which extend their operating temperature and inhibit the bipolar carrier conduction and thermal conductivity, and more importantly, their energy bands exhibit multiple valence band convergence to a narrow energy range near the Brillouin zone center, which induces an optimal p-type power factor up to 10.94-32.11 W m^-1 K^-2 at room temperature. Moreover, these monolayers contain heavy atomic masses and high polarizability of some chemical bonds, leading to small group velocities of phonons and anharmonic phonon behavior that produce an intrinsic lattice thermal conductivity as low as 0.79-3.13 W m^-1 K^-1 at room temperature. Thus, these monolayers act as p-type thermoelectric materials with thermoelectric figure of merit of up to 2.6-5.5 for SnSb₂Te₄, 0.7-2.2 for PbSb₂Te₄, and 1.6-4.2 for PbBi₂Te₄ in the temperature range of 300 to 750 K, and 4.5-5.9 for SnBi₂Te₄ in the temperature range of 300 to 450 K.

Synthesis of Ultrathin Topological Insulator β-Ag2 Te and Ag2 Te/WSe2 -Based High-Performance Photodetector

β-Ag₂ Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag₂ Te because of the non-layered structure of Ag₂ Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag₂ Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag₂ Te crystal exhibits p-type conduction behavior with high carrier mobility of 3336 cm² V^-1 s^-1 at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag₂ Te, the Ag₂ Te/WSe₂ heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2 × 10⁵ . Ag₂ Te/WSe₂ photodetector also exhibits self-driven properties with a fast response speed (40 µs/60 µs) in the near-infrared region. High responsivity (219 mA W^-1 ) and light ON/OFF ratio of 6 × 10⁵ are obtained under the photovoltaic mode. The overall performance of the Ag₂ Te/WSe₂ photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag₂ Te is a promising candidate for future electronic and optoelectronic applications.

Designing Inorganic Semiconductors with Cold-Rolling Processability

While metals can be readily processed and reshaped by cold rolling, most bulk inorganic semiconductors are brittle materials that tend to fracture when plastically deformed. Manufacturing thin sheets and foils of inorganic semiconductors is therefore a bottleneck problem, severely restricting their use in flexible electronic applications. It is recently reported that a few single-crystalline 2D van der Waals (vdW) semiconductors, such as InSe, are deformable under compressive stress. Here it is demonstrated that intralayer fracture toughness can be tailored via compositional design to make inorganic semiconductors processable by cold rolling. Systematic ab initio calculations covering a range of van der Waals semiconductors homologous to InSe are reported, leading to material-property maps that forecast trends in both the susceptibility to interlayer slip and the intralayer fracture toughness against cracking. GaSe is predicted, and experimentally confirmed, to be practically amenable to being rolled to large (three quarters) thickness reduction and length extension by a factor of three. The fracture toughness and cleavage energy are predicted to be 0.25 MPa m0.5 and 15 meV Å-2 , respectively. The findings open a new realm of possibility for alloy selection and design toward processing-friendly group-III chalcogenides for practical applications.

Thermoelectric characteristics of X[Formula: see text]YH[Formula: see text] monolayers (X=Si, Ge; Y=P, As, Sb, Bi): a first-principles study

Ever since global warming emerged as a serious issue, the development of promising thermoelectric materials has been one of the main hot topics of material science. In this work, we provide an in-depth understanding of the thermoelectric properties of X[Formula: see text]YH[Formula: see text] monolayers (X=Si, Ge; Y=P, As, Sb, Bi) using the density functional theory combined with the Boltzmann transport equation. The results indicate that the monolayers have very low lattice thermal conductivities in the range of 0.09-0.27 Wm[Formula: see text]K[Formula: see text] at room temperature, which are correlated with the atomic masses of primitive cells. Ge[Formula: see text]PH[Formula: see text] and Si[Formula: see text]SbH[Formula: see text] possess the highest mobilities for hole (1894 cm[Formula: see text]V[Formula: see text]s[Formula: see text]) and electron (1629 cm[Formula: see text]V[Formula: see text]s[Formula: see text]), respectively. Si[Formula: see text]BiH[Formula: see text] shows the largest room-temperature figure of merit, [Formula: see text] in the n-type doping ( [Formula: see text] cm[Formula: see text]), which is predicted to reach 3.49 at 800 K. Additionally, Si[Formula: see text]SbH[Formula: see text] and Si[Formula: see text]AsH[Formula: see text] are found to have considerable ZT values above 2 at room temperature. Our findings suggest that the mentioned monolayers are more efficient than the traditional thermoelectric materials such as Bi[Formula: see text]Te[Formula: see text] and stimulate experimental efforts for novel syntheses and applications.

Anomalous strain effect on the thermal conductivity of low-buckled two-dimensional silicene

The thermal conductivity of two-dimensional materials, such as graphene, typically decreases when tensile strain is applied, which softens their phonon modes. Here, we report an anomalous strain effect on the thermal conductivity of monolayer silicene, a representative low-buckled two-dimensional (LB-2D) material. ReaxFF-based molecular dynamics simulations are performed to show that biaxially stretched monolayer silicene exhibits a remarkable increase in thermal conductivity, by as much as 10 times the freestanding value, with increasing applied strain in the range of [0, 0.1], which is attributed to increased contributions from long-wavelength phonons. A further increase in strain in the range of [0.11, 0.18] results in a plateau of the thermal conductivity in an oscillatory manner, governed by a unique dynamic bonding behavior under extreme loading. This anomalous effect reveals new physical insights into the thermal properties of LB-2D materials and may provide some guidelines for designing heat management and energy conversion devices based on such materials.

Copper(I)-Based Flexible Organic-Inorganic Coordination Polymer and Analogues: High-Power Factor Thermoelectrics

We investigated the transport properties of the single layer and bulk copper(I) 4-hydroxythiophenolate (Cu(SC₆H₄OH)) coordination polymers and their analogues Cu(SeC₆H₄OH) and Cu(TeC₆H₄OH) on the basis of density functional calculations. We found that the bulk phases show superior power factors when compared with single-layer phases. This performance is comparable to the reported best organic thermoelectric candidates p-type poly(3.4-ethylenedioxythiophene) (PEDOT) and n-type poly[K_x(Ni-ett)] (ett = ethylenetetrathiolate). The non-parabolic conduction band minimum of Cu(SeC₆H₄OH) along the x direction can decouple the transport quantities, Seebeck coefficient, and electrical conductivity to achieve the highest power factor among all the candidates.

Lattice Thermal Transport in Monolayer Group 13 Monochalcogenides MX (M = Ga, In; X = S, Se, Te): Interplay of Atomic Mass, Harmonicity, and Lone-Pair-Induced Anharmonicity

We perform a systematic study of the lattice dynamics and the lattice thermal conductivity, κ, of monolayer group 13 monochalcogenides MX (M = Ga, In; X = S, Se, Te) by combining an iterative solution for linearized phonon Boltzmann transport equation and density functional theory. Among the competing factors influencing κ, harmonic parameters along with the atomic masses dominate over anharmonicity. An increase in atomic mass leads to a decrease in phonon frequencies and phonon group velocities and consequently in κ. At T = 300 K, the calculated κ values are 54.9, 48.1, 44.3, 25.0, 22.3, and 17.3 W m^-1 K^-1 for GaS, InS, GaSe, InSe, GaTe, and InTe monolayers, respectively. Further analysis of anharmonic scattering rates and average scattering matrix elements evidences that the anharmonicity characterized by the third-order IFCs in GaS and InS are the largest among all monolayer group 13 monochalcogenides despite the largest κ values. This is attributed to a strong interaction between nonbonding lone-pair s electrons around the S atom and adjacent bonding electrons. In addition, the κ of these monolayers further reduces to 50% for sample sizes 300-400 nm. Our findings provide fundamental insights into thermal transport in monolayer group 13 monochalcogenides and should stimulate further experimental exploration of thermal transport in these materials for possible theromoelectric and thermal management applications.

Strain-Induced Ultrahigh Electron Mobility and Thermoelectric Figure of Merit in Monolayer α-Te

In line with the classic phonon-glass electron-crystal (PGEC) paradigm, semiconducting and semimetallic multinary compounds remain the cornerstone of the state-of-the-art thermoelectric materials. By contrast, elemental PGEC is very rare. In this work, we report a thermoelectric study of monolayer α-Te by first-principles calculations and solving the parameter-free Boltzmann transport equation. It is found that monolayer α-Te possesses high electron mobility (about 2500 cm² V^-1 s^-1) at room temperature due to small effective mass, low phonon frequencies, and thus a restricted phase space for electron-phonon scattering. In monolayer α-Te, the electrons near the conduction band edge are mainly scattered by the heavily populated quadratically dispersing out-of-plane acoustic (ZA) phonon modes. The thermoelectric figure of merit (ZT) for n-type monolayer α-Te is 0.55 at 300 K and 1.46 at 700 K. Notably, tensile strain stiffens the ZA modes, yielding a linear energy-momentum dispersion relation and the removal of the diverging thermal population of ZA phonons. Consequently, the electron mobility is enhanced. At a 4% tensile strain, the electron mobility can reach up to 8000 cm² V^-1 s^-1 at room temperature while the thermal conductivity is almost unaffected, yielding a state-of-the-art ZT value of 0.94 and 2.03 in n-type monolayer α-Te at 300 and 700 K, respectively. For completeness, the thermoelectric study of p-type monolayer α-Te is also conducted. These results beckon further experiments toward high-performance α-Te-based thermoelectric materials via doping, alloying, and compositing.

New Polymorphs of 2D Indium Selenide with Enhanced Electronic Properties

The 2D semiconductor indium selenide (InSe) has attracted significant interest due its unique electronic band structure, high electron mobility, and wide tunability of its band gap energy achieved by varying the layer thickness. All these features make 2D InSe a potential candidate for advanced electronic and optoelectronic applications. Here, the discovery of new polymorphs of InSe with enhanced electronic properties is reported. Using a global structure search that combines artificial swarm intelligence with first-principles energetic calculations, polymorphs that consist of a centrosymmetric monolayer belonging to the point group D 3d are identified, distinct from well-known polymorphs based on the D 3h monolayers that lack inversion symmetry. The new polymorphs are thermodynamically and kinetically stable, and exhibit a wider optical spectral response and larger electron mobilities compared to the known polymorphs. Opportunities to synthesize these newly discovered polymorphs and viable routes to identify them by X-ray diffraction, Raman spectroscopy, and second harmonic generation experiments are discussed.

Recent Progress of Two-Dimensional Thermoelectric Materials

Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power. Moreover, the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades. Among these compounds, layered two-dimensional (2D) materials, such as graphene, black phosphorus, transition metal dichalcogenides, IVA-VIA compounds, and MXenes, have generated a large research attention as a group of potentially high-performance thermoelectric materials. Due to their unique electronic, mechanical, thermal, and optoelectronic properties, thermoelectric devices based on such materials can be applied in a variety of applications. Herein, a comprehensive review on the development of 2D materials for thermoelectric applications, as well as theoretical simulations and experimental preparation, is presented. In addition, nanodevice and new applications of 2D thermoelectric materials are also introduced. At last, current challenges are discussed and several prospects in this field are proposed.

Diverse electronic properties of 2D layered Se-containing materials composed of quasi-1D atomic chains

The two-dimensional (2D) atomically thin layered materials have attracted significant attention for constructing next-generation integrated electronic and optoelectronic devices. A special class of 2D materials composed of quasi one-dimensional (1D) atomic chains that show intriguing properties are less studied. Here, two Se-containing 2D layered materials α-Se and Sb₂Se₃ that have quasi-1D atomic chains are investigated via first-principles electronic structure calculations. Results shows that the electronic properties of n-monolayers (n-MLs) stacked α-Se and Sb₂Se₃ exhibit distinct layer-dependence electronic properties. The band gap of 2D α-Se remarkably decreases with increasing thickness, whereas the band gap of 2D Sb₂Se₃ show negligible change with thickness. The evolution of lattice phonon frequencies with thickness also show similar distinction. The underpinnings of the diverse electronic properties are attributed to the different electronic coupling among the layers of α-Se and Sb₂Se₃ that results in different van der Waals interactions among chains/layers. Our study demonstrates the rich diversity in the properties of 2D layered materials composed of lower-dimensional structural motifs.

Thermoelectric Properties of Carbon Nanotubes

Thermoelectric (TE) material is a class of materials that can convert heat to electrical energy directly in a solid-state-device without any moving parts and that is environmentally friendly. The study and development of TE materials have grown quickly in the past decade. However, their development goes slowly by the lack of cheap TE materials with high Seebeck coefficient and good electrical conductivity. Carbon nanotubes (CNTs) are particularly attractive as TE materials because of at least three reasons: (1) CNTs possess various band gaps depending on their structure, (2) CNTs represent unique one-dimensional carbon materials which naturally satisfies the conditions of quantum confinement effect to enhance the TE efficiency and (3) CNTs provide us with a platform for developing lightweight and flexible TE devices due to their mechanical properties. The TE power factor is reported to reach 700–1000 W / m K 2 for both p-type and n-type CNTs when purified to contain only doped semiconducting CNT species. Therefore, CNTs are promising for a variety of TE applications in which the heat source is unlimited, such as waste heat or solar heat although their figure of merit Z T is still modest (0.05 at 300 K). In this paper, we review in detail from the basic concept of TE field to the fundamental TE properties of CNTs, as well as their applications. Furthermore, the strategies are discussed to improve the TE properties of CNTs. Finally, we give our perspectives on the tremendous potential of CNTs-based TE materials and composites.

Thermoelectric Performance of Two-Dimensional AlX (X = S, Se, Te): A First-Principles-Based Transport Study

By using the first-principles calculations in combination with the Boltzmann transport theory, we systematically study the thermoelectric properties of AlX (X = S, Se, Te) monolayers as indirect gap semiconductors. The unique electronic density of states, which consists of a rather sharp peak at the valence band maxima and an almost constant band at the conduction band minima, makes AlX (X = S, Se, Te) monolayers excellent thermoelectric materials. The optimized power factors at room temperature are 22.59, 62.59, and 6.79 mW m-1 K-2 under reasonable electronic concentration for AlS, AlSe, and AlTe monolayers, respectively. The figure of merit (zT) increases with temperature and the optimized zT values of 0.52, 0.59, and 0.26 at room temperature are achieved under moderate electronic concentration for AlS, AlSe, and AlTe monolayers, respectively, indicating that two-dimensional layered AlX (X = S, Se, Te) semiconductors, especially AlSe, can be potential candidate matrices for high-performance thermoelectric nanocomposites.

Elastic properties and intrinsic strength of two-dimensional InSe flakes

The mechanical properties of two-dimensional (2D) materials are critical for their applications in functional devices as well as for strain engineering. Here, we report the Young's modulus and breaking strength of multilayered InSe, an emerging 2D semiconductor of the layered group III chalcogenide. Few-layer InSe flaks were exfoliated from bulk InSe crystal onto Si/SiO₂ substrate with micro-fabricated holes, and indentation tests were carried out using an atomic force microscopy probe. In combination with both continuum analysis and finite element simulation, we measured the Young's modulus of multilayer 2D InSe (>5 L) to be 101.37 ± 17.93 GPa, much higher than its bulk counterpart, while its breaking strength is determined to be 8.68 GPa, approaching the theoretical limit of 10.1 GPa. Density functional theory calculations were also carried out to explain the insensitivity of Young's modulus to the layer count. It is found that 2D InSe is softer than most 2D materials, and exhibits breaking strength higher than that of carbon fiber, yet remaining more compliant, making it ideal for flexible electronics applications. The reliability of our method is also validated by measurement of graphene.

Thermoelectric Performance of 2D Tellurium with Accumulation Contacts

Tellurium (Te) is an intrinsically p-type-doped narrow-band gap semiconductor with an excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoretically predicted and experimentally demonstrated to be an outstanding thermoelectric material with a high value of thermoelectric figure-of-merit ZT. In view of the recent progress in developing the synthesis route of 2D tellurium thin films as well as the growing trend of exploiting nanostructures as thermoelectric devices, here for the first time, we report the excellent thermoelectric performance of tellurium nanofilms, with a room-temperature power factor of 31.7 μW/cm K² and ZT value of 0.63. To further enhance the efficiency of harvesting thermoelectric power in nanofilm devices, thermoelectrical current mapping was performed with a laser as a heating source, and we found that high work function metals such as palladium can form rare accumulation-type metal-to-semiconductor contacts to Te, which allows thermoelectrically generated carriers to be collected more efficiently. High-performance thermoelectric Te devices have broad applications as energy harvesting devices or nanoscale Peltier coolers in microsystems.