1
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Ai M, Song Y, Long F, Zhang Y, An K, Yu D, Chen Y, Sakai Y, Ikeda M, Takahashi K, Azuma M, Shi N, Zhou C, Chen J. Significantly Promoting the Thermal Conductivity and Machinability of Negative Thermal Expansion Alloy via In Situ Precipitation of Copper Networks. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2404838. [PMID: 39193864 DOI: 10.1002/advs.202404838] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/06/2024] [Revised: 07/23/2024] [Indexed: 08/29/2024]
Abstract
Rapid advancements in electronic devices yield an urgent demand for high-performance electronic packaging materials with high thermal conductivity, low thermal expansion, and great mechanical properties. However, it is a great challenge for current design philosophies to fulfill all the requirements simultaneously. Here, an effective strategy is proposed for significantly promoting the thermal conductivity and machinability of negative thermal expansion alloy (Zr,Nb)Fe2 through eutectic precipitation of copper networks. The eutectic dual-phase alloy exhibits an isotropic chips-matched thermal expansion coefficient and a thermal conductivity enhancement exceeding 200% compared with (Zr,Nb)Fe2, along with an ultimate compressive strength of 550 MPa. The addition of copper reorganizes the composition of (Zr,Nb)Fe2, which smooths the magnetic transition and shifts it toward higher temperature, resulting in linear low thermal expansion in a wide temperature range. The highly fine eutectic copper lamellae construct high thermal conductivity networks within (Zr,Nb)Fe2, serving as highways for heat transfer electrons and phonons. The in situ forming of eutectic copper lamellae also facilitates the mechanical properties by enhancing interfacial bonding and bearing additional stress after yielding of (Zr,Nb)Fe2. This work provides a novel strategy for promoting thermal conductivity and mechanical properties of negative thermal expansion alloys via eutectic precipitation of copper networks.
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Affiliation(s)
- Minjun Ai
- Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yuzhu Song
- Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Feixiang Long
- Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Yuanpeng Zhang
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Ke An
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Dunji Yu
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Yan Chen
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Yuki Sakai
- Kanagawa Institute of Industrial Science and Technology (KISTEC), 705-1 Shimoimaizumi, Ebina, Kanagawa, 243-0435, Japan
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Masahito Ikeda
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Kazuki Takahashi
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Masaki Azuma
- Kanagawa Institute of Industrial Science and Technology (KISTEC), 705-1 Shimoimaizumi, Ebina, Kanagawa, 243-0435, Japan
- Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Naike Shi
- Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
| | - Chang Zhou
- Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
- State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing, 100083, China
| | - Jun Chen
- Department of Physical Chemistry, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, China
- Hainan University, Haikou, Hainan, 570228, China
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2
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Alikin D, Pereira MJ, Abramov A, Pashnina E, Chuvakova M, Lavrik NV, Xie W, Weidenkaff A, Kholkin AL, Kovalevsky A, Tselev A. Nanoscale Imaging and Measurements of Grain Boundary Thermal Resistance in Ceramics with Scanning Thermal Wave Microscopy. ACS APPLIED MATERIALS & INTERFACES 2024; 16:42917-42930. [PMID: 39102288 PMCID: PMC11331444 DOI: 10.1021/acsami.4c08085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2024] [Revised: 07/24/2024] [Accepted: 07/26/2024] [Indexed: 08/06/2024]
Abstract
Material thermal conductivity is a key factor in various applications, from thermal management to energy harvesting. With microstructure engineering being a widely used method for customizing material properties, including thermal properties, understanding and controlling the role of extended phonon-scattering defects, like grain boundaries, is crucial for efficient material design. However, systematic studies are still lacking primarily due to limited tools. In this study, we demonstrate an approach for measuring grain boundary thermal resistance by probing the propagation of thermal waves across grain boundaries with a temperature-sensitive scanning probe. The method, implemented with a spatial resolution of about 100 nm on finely grained Nb-substituted SrTiO3 ceramics, achieves a detectability of about 2 × 10-8 K m2 W-1, suitable for chalcogenide-based thermoelectrics. The measurements indicated that the thermal resistance of the majority of grain boundaries in the STiO3 ceramics is below this value. While there are challenges in improving sensitivity, considering spatial resolution and the amount of material involved in the detection, the sensitivity of the scanning probe method is comparable to that of optical thermoreflectance techniques, and the method opens up an avenue to characterize thermal resistance at the level of single grain boundaries and domain walls in a spectrum of microstructured materials.
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Affiliation(s)
- Denis Alikin
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Maria J. Pereira
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Alexander Abramov
- School
of Natural Sciences and Mathematics, Ural
Federal University, Ekaterinburg 620000, Russia
| | - Elena Pashnina
- School
of Natural Sciences and Mathematics, Ural
Federal University, Ekaterinburg 620000, Russia
| | - Maria Chuvakova
- School
of Natural Sciences and Mathematics, Ural
Federal University, Ekaterinburg 620000, Russia
| | - Nickolay V. Lavrik
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Wenjie Xie
- Materials
and Resources, Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64287, Germany
- Fraunhofer
Research Institution for Materials Recycling and Resource Strategies
IWKS, Alzenau 63755, Germany
| | - Anke Weidenkaff
- Materials
and Resources, Department of Materials and Earth Sciences, Technical University of Darmstadt, Darmstadt 64287, Germany
- Fraunhofer
Research Institution for Materials Recycling and Resource Strategies
IWKS, Alzenau 63755, Germany
| | - Andrei L. Kholkin
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Andrei Kovalevsky
- Department
of Materials and Ceramic Engineering & CICECO − Aveiro
Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
| | - Alexander Tselev
- Department
of Physics & CICECO−Aveiro Institute of Materials, University of Aveiro, Aveiro 3810-193, Portugal
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3
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Álvarez-Martínez V, Ramos R, Leborán V, Sarantopoulos A, Dittmann R, Rivadulla F. Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO 3 Devices. ACS APPLIED MATERIALS & INTERFACES 2024; 16:15043-15049. [PMID: 38477897 PMCID: PMC10982933 DOI: 10.1021/acsami.3c19285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2023] [Revised: 02/23/2024] [Accepted: 02/23/2024] [Indexed: 03/14/2024]
Abstract
The operation of oxide-based memristive devices relies on the fast accumulation and depletion of oxygen vacancies by an electric field close to the metal-oxide interface. Here, we show that the reversible change of the local concentration of oxygen vacancies at this interface also produces a change in the thermal boundary resistance (TBR), i.e., a thermal resistive switching effect. We used frequency domain thermoreflectance to monitor the interfacial metal-oxide TBR in (Pt,Cr)/SrTiO3 devices, showing a change of ≈20% under usual SET/RESET operation voltages, depending on the structure of the device. Time-dependent thermal relaxation experiments suggest ionic rearrangement along the whole area of the metal/oxide interface, apart from the ionic filament responsible for the electrical conductivity switching. The experiments presented in this work provide valuable knowledge about oxide ion dynamics in redox-based memristive devices.
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Affiliation(s)
- Víctor Álvarez-Martínez
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
- Departamento
de Química-Física, Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
| | - Rafael Ramos
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
- Departamento
de Química-Física, Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
| | - Víctor Leborán
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
| | - Alexandros Sarantopoulos
- Peter
Gruenberg Institute (PGI-7) Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany
| | - Regina Dittmann
- Peter
Gruenberg Institute (PGI-7) Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany
| | - Francisco Rivadulla
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
- Departamento
de Química-Física, Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
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4
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Holtz ME, Padgett E, Johnston-Peck AC, Levin I, Muller DA, Herzing AA. Mapping Polar Distortions using Nanobeam Electron Diffraction and a Cepstral Approach. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2023; 29:1422-1435. [PMID: 37488825 DOI: 10.1093/micmic/ozad070] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/21/2022] [Revised: 05/26/2023] [Accepted: 06/18/2023] [Indexed: 07/26/2023]
Abstract
Measuring local polar ordering is key to understanding ferroelectricity in thin films, especially for systems with small domains or significant disorder. Scanning nanobeam electron diffraction (NBED) provides an effective local probe of lattice parameters, local fields, polarization directions, and charge densities, which can be analyzed using a relatively low beam dose over large fields of view. However, quantitatively extracting the magnitudes and directions of polarization vectors from NBED remains challenging. Here, we use a cepstral approach, similar to a pair distribution function, to determine local polar displacements that drive ferroelectricity from NBED patterns. Because polar distortions generate asymmetry in the diffraction pattern intensity, we can efficiently recover the underlying displacements from the imaginary part of the cepstrum transform. We investigate the limits of this technique using analytical and simulated data and give experimental examples, achieving the order of 1.1 pm precision and mapping of polar displacements with nanometer resolution.
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Affiliation(s)
- Megan E Holtz
- Material Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
- School of Applied and Engineering Physics, Cornell University, 142 Sciences Drive, Ithaca, NY 14853, USA
- Department of Metallurgical and Materials Engineering, Colorado School of Mines, 1301 19th Street, Golden, CO 80401, USA
| | - Elliot Padgett
- School of Applied and Engineering Physics, Cornell University, 142 Sciences Drive, Ithaca, NY 14853, USA
| | - Aaron C Johnston-Peck
- Material Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
| | - Igor Levin
- Material Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, 142 Sciences Drive, Ithaca, NY 14853, USA
| | - Andrew A Herzing
- Material Measurement Laboratory, National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, MD 20899, USA
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5
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Boulbitch A, Korzhenevskii AL. Self-oscillatory instability of the driven phase front propagation induced by liberation of latent heat. Phys Rev E 2023; 108:014114. [PMID: 37583238 DOI: 10.1103/physreve.108.014114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Accepted: 04/26/2023] [Indexed: 08/17/2023]
Abstract
We theoretically address crystals exhibiting first-order phase transformations subjected to a steadily propagating temperature gradient. The latter drives a nonisothermal propagation of a phase front. We theoretically demonstrate that for the phase transformations of the displacive type, the phase front always steadily follows the isotherm. In contrast, in the case of the order-disorder or hybrid phase transformations in a crystal containing pinning defects, one finds a velocity of the isotherm, the first critical velocity, at which the steady front motion becomes unstable, and a stick-slip front propagation starts. Upon reaching the second critical velocity, the stick-slip behavior vanishes, and the motion becomes steady again. Our results enable one to determine the activation energy of the leading order-disorder process from the measurements of the driven motion of the phase front. In light of these results, we discuss experimental findings for PbTiO_{3} and NaNbO_{3}.
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Affiliation(s)
| | - Alexander L Korzhenevskii
- Institute for Problems of Mechanical Engineering, RAS, Bol'shoi prosp. V. O. 61, 199178 St. Petersburg, Russia
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6
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Negi A, Kim HP, Hua Z, Timofeeva A, Zhang X, Zhu Y, Peters K, Kumah D, Jiang X, Liu J. Ferroelectric Domain Wall Engineering Enables Thermal Modulation in PMN-PT Single Crystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211286. [PMID: 36796104 DOI: 10.1002/adma.202211286] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/02/2022] [Revised: 02/11/2023] [Indexed: 06/02/2023]
Abstract
Acting like thermal resistances, ferroelectric domain walls can be manipulated to realize dynamic modulation of thermal conductivity (k), which is essential for developing novel phononic circuits. Despite the interest, little attention has been paid to achieving room-temperature thermal modulation in bulk materials due to challenges in obtaining a high thermal conductivity switching ratio (khigh /klow ), particularly in commercially viable materials. Here, room-temperature thermal modulation in 2.5 mm-thick Pb(Mg1/3 Nb2/3 )O3 -xPbTiO3 (PMN-xPT) single crystals is demonstrated. With the use of advanced poling conditions, assisted by the systematic study on composition and orientation dependence of PMN-xPT, a range of thermal conductivity switching ratios with a maximum of ≈1.27 is observed. Simultaneous measurements of piezoelectric coefficient (d33 ) to characterize the poling state, domain wall density using polarized light microscopy (PLM), and birefringence change using quantitative PLM reveal that compared to the unpoled state, the domain wall density at intermediate poling states (0< d33 <d33,max ) is lower due to the enlargement in domain size. At optimized poling conditions (d33,max ), the domain sizes show increased inhomogeneity that leads to enhancement in the domain wall density. This work highlights the potential of commercially available PMN-xPT single crystals among other relaxor-ferroelectrics for achieving temperature control in solid-state devices.
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Affiliation(s)
- Ankit Negi
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Hwang Pill Kim
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Zilong Hua
- Materials Science and Manufacturing department, EES&T, Idaho National laboratory, Idaho Falls, ID, 83401, USA
| | - Anastasia Timofeeva
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Xuanyi Zhang
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA
| | - Yong Zhu
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Kara Peters
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Divine Kumah
- Department of Physics, North Carolina State University, Raleigh, NC, 27695, USA
| | - Xiaoning Jiang
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
| | - Jun Liu
- Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, NC, 27695, USA
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7
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Zhang Y, Postiglione WM, Xie R, Zhang C, Zhou H, Chaturvedi V, Heltemes K, Zhou H, Feng T, Leighton C, Wang X. Wide-range continuous tuning of the thermal conductivity of La 0.5Sr 0.5CoO 3-δ films via room-temperature ion-gel gating. Nat Commun 2023; 14:2626. [PMID: 37149614 PMCID: PMC10164146 DOI: 10.1038/s41467-023-38312-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Accepted: 04/25/2023] [Indexed: 05/08/2023] Open
Abstract
Solid-state control of the thermal conductivity of materials is of exceptional interest for novel devices such as thermal diodes and switches. Here, we demonstrate the ability to continuously tune the thermal conductivity of nanoscale films of La0.5Sr0.5CoO3-δ (LSCO) by a factor of over 5, via a room-temperature electrolyte-gate-induced non-volatile topotactic phase transformation from perovskite (with δ ≈ 0.1) to an oxygen-vacancy-ordered brownmillerite phase (with δ = 0.5), accompanied by a metal-insulator transition. Combining time-domain thermoreflectance and electronic transport measurements, model analyses based on molecular dynamics and Boltzmann transport equation, and structural characterization by X-ray diffraction, we uncover and deconvolve the effects of these transitions on heat carriers, including electrons and lattice vibrations. The wide-range continuous tunability of LSCO thermal conductivity enabled by low-voltage (below 4 V) room-temperature electrolyte gating opens the door to non-volatile dynamic control of thermal transport in perovskite-based functional materials, for thermal regulation and management in device applications.
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Affiliation(s)
- Yingying Zhang
- Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
| | - William M Postiglione
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Rui Xie
- Department of Mechanical Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Chi Zhang
- Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Hao Zhou
- Department of Mechanical Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Vipul Chaturvedi
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Kei Heltemes
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Hua Zhou
- Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Tianli Feng
- Department of Mechanical Engineering, University of Utah, Salt Lake City, UT, 84112, USA
| | - Chris Leighton
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN, 55455, USA.
| | - Xiaojia Wang
- Department of Mechanical Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
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8
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Varela-Domínguez N, López-Bueno C, López-Moreno A, Claro MS, Rama G, Leborán V, Giménez-López MDC, Rivadulla F. Light-induced bi-directional switching of thermal conductivity in azobenzene-doped liquid crystal mesophases. JOURNAL OF MATERIALS CHEMISTRY. C 2023; 11:4588-4594. [PMID: 37033203 PMCID: PMC10077501 DOI: 10.1039/d3tc00099k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/09/2023] [Accepted: 02/23/2023] [Indexed: 06/19/2023]
Abstract
The development of systems that can be switched between states with different thermal conductivities is one of the current challenges in materials science. Despite their enormous diversity and chemical richness, molecular materials have been only scarcely explored in this regard. Here, we report a reversible, light-triggered thermal conductivity switching of ≈30-40% in mesophases of pure 4,4'-dialkyloxy-3-methylazobenzene. By doping a liquid crystal matrix with the azobenzene molecules, reversible and bidirectional switching of the thermal conductivity can be achieved by UV/Vis-light irradiation. Given the enormous variety of photoactive molecules and chemically compatible liquid crystal mesophases, this approach opens unforeseen possibilities for developing effective thermal switches based on molecular materials.
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Affiliation(s)
- Noa Varela-Domínguez
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - Carlos López-Bueno
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - Alejandro López-Moreno
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Inorganica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - Marcel S Claro
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - Gustavo Rama
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Inorganica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - Víctor Leborán
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - María Del Carmen Giménez-López
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Inorganica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
| | - Francisco Rivadulla
- CiQUS, Centro Singular de Investigacion en Quimica Bioloxica e Materiais Moleculares, Departamento de Quimica-Fisica, Universidade de Santiago de Compostela 15782-Santiago de Compostela Spain
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9
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Wu C, Zhao Y, Zhang G, Liu C. Giant thermal switching in ferromagnetic VSe 2 with programmable switching temperature. NANOSCALE HORIZONS 2023; 8:202-210. [PMID: 36484168 DOI: 10.1039/d2nh00429a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Active and reversible modulation of thermal conductivity can realize efficient heat energy management in many applications such as thermoelectrics. Using first-principles calculations, this study reports a giant thermal switching ratio of 12, much higher than previously reported values, in monolayer 2H-VSe2 above room temperature. Detailed analysis indicates that the high thermal switching ratio is dominated by the ferromagnetic ordering induced phonon bandgap, which significantly suppresses the phonon-phonon scattering phase space across the entire vibration spectrum. The thermal switching in bulk 2H-VSe2 is also investigated and the thermal switching ratio reaches 9.2 at the magnetic transition temperature. Both the phonon-phonon scattering space phase and phonon anharmonicity are responsible for the 9.2-fold thermal switching. This study advances the understanding of heat energy transport in two-dimensional ferromagnets, and also provides new insight into heat energy control and conversion.
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Affiliation(s)
- Chao Wu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China.
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing, 211100, P. R. China
| | - Yunshan Zhao
- NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing 210023, P. R. China
| | - Gang Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, 138632, Singapore.
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China.
- Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, Nanjing Normal University, Nanjing, 210023, P. R. China
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10
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Zhang S, Li S, Wei L, Zhang H, Wang X, Liu B, Zhang Y, Zhang R, Qiu C. Wide-Temperature Tunable Phonon Thermal Switch Based on Ferroelectric Domain Walls of Tetragonal KTN Single Crystal. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:376. [PMID: 36770336 PMCID: PMC9919584 DOI: 10.3390/nano13030376] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/19/2022] [Revised: 01/09/2023] [Accepted: 01/13/2023] [Indexed: 06/18/2023]
Abstract
Ferroelectric domain walls (DWs) of perovskite oxide materials, which can be written and erased by an external electric field, offer the possibility to dynamically manipulate phonon scattering and thermal flux behavior. Different from previous ferroelectric materials, such as BaTiO3, PbTiO3, etc., with an immutable and low Curie temperature. The Curie temperature of perovskite oxide KTa1-xNbxO3 (KTN) crystal can be tuned by altering the Ta/Nb ratio. In this work, the ferroelectric KTa0.6Nb0.4O3 (KTN) single crystal is obtained by the Czochralski method. To understand the role of ferroelectric domains in thermal transport behavior, we perform a nonequilibrium molecular dynamics (NEMD) calculation on monodomain and 90° DWs of KTN at room temperature. The calculated thermal conductivity of monodomain KTN is 9.84 W/(m·k), consistent with experimental results of 8.96 W/(m·k), and distinctly decreased with the number of DWs indicating the outstanding performance of the thermal switch. We further evaluate the thermal boundary resistance (TBR) of KTN DWs. An interfacial thermal resistance value of 2.29 × 10-9 K·m2/W and a large thermal switch ratio of 4.76 was obtained for a single DW of KTN. Our study shows that the ferroelectric KTN can provide great potential for the application of thermal switch at room temperature and over a broad temperature range.
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Affiliation(s)
- Shaodong Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Shuangru Li
- Shandong Academy of Sciences Yida Technology Consulting Co., Ltd., Jinan 250014, China
| | - Lei Wei
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Huadi Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Xuping Wang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Bing Liu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Yuanyuan Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Rui Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Chengcheng Qiu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Key Laboratory for Light Conversion Materials and Technology of Shandong Academy of Sciences, Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
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11
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Liu C, Chen Z, Wu C, Qi J, Hao M, Lu P, Chen Y. Large Thermal Conductivity Switching in Ferroelectrics by Electric Field-Triggered Crystal Symmetry Engineering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:46716-46725. [PMID: 36200681 DOI: 10.1021/acsami.2c11530] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
A convenient, reversible, fast, and wide-range switching of thermal conductivity is desired for efficient heat energy management. However, traditional methods, such as temperature-induced phase transition and chemical doping, have many limitations, e.g., the lack of continuous tunability over a wide temperature range and low switching speed. In this work, a strategy of electric field-driven crystal symmetry engineering to efficiently modulate thermal conductivity is reported with first-principles calculations. By simply changing the direction of an external electric field loaded in ferroelectric PbZr0.5Ti0.5O3, near the morphotropic phase boundary composition, we obtain the largest switching of thermal conductivity for ferroelectric materials at room temperature based on the dual-phonon theory, i.e., normal and diffuson-like phonons, with three different criteria. The calculation results indicate that with decreasing crystal symmetry, the degeneracy of phonon modes reduces and the avoid-crossing behavior of phonon branches enhances, leading to the increase of diffuson-like phonons and weighted phonon-phonon scattering phase space. A thermal switch prototype based on PbZr0.5Ti0.5O3 is further shown that can protect the Li-ion battery by modulating its temperature up to 17.5 °C. Our studies would pave the way for designing next-generation thermal switch with high speed, a wide temperature range, and a large switching ratio.
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Affiliation(s)
- Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing210046, P. R. China
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, Guangdong518055, P. R. China
| | - Chao Wu
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing211100, P. R. China
| | - Jing Qi
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing210046, P. R. China
| | - Menglong Hao
- Jiangsu Provincial Key Laboratory of Solar Energy Science and Technology/Energy Storage Joint Research Center, School of Energy and Environment, Southeast University, No. 2 Si Pai Lou, Nanjing210096, P. R. China
| | - Ping Lu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Jiangsu Key Laboratory for Numerical Simulation of Large-Scale Complex Systems, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing210046, P. R. China
| | - Yunfei Chen
- Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments, School of Mechanical Engineering, Southeast University, Nanjing211100, P. R. China
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12
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Pesquera D, Fernández A, Khestanova E, Martin LW. Freestanding complex-oxide membranes. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:383001. [PMID: 35779514 DOI: 10.1088/1361-648x/ac7dd5] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2022] [Accepted: 07/01/2022] [Indexed: 06/15/2023]
Abstract
Complex oxides show a vast range of functional responses, unparalleled within the inorganic solids realm, making them promising materials for applications as varied as next-generation field-effect transistors, spintronic devices, electro-optic modulators, pyroelectric detectors, or oxygen reduction catalysts. Their stability in ambient conditions, chemical versatility, and large susceptibility to minute structural and electronic modifications make them ideal subjects of study to discover emergent phenomena and to generate novel functionalities for next-generation devices. Recent advances in the synthesis of single-crystal, freestanding complex oxide membranes provide an unprecedented opportunity to study these materials in a nearly-ideal system (e.g. free of mechanical/thermal interaction with substrates) as well as expanding the range of tools for tweaking their order parameters (i.e. (anti-)ferromagnetic, (anti-)ferroelectric, ferroelastic), and increasing the possibility of achieving novel heterointegration approaches (including interfacing dissimilar materials) by avoiding the chemical, structural, or thermal constraints in synthesis processes. Here, we review the recent developments in the fabrication and characterization of complex-oxide membranes and discuss their potential for unraveling novel physicochemical phenomena at the nanoscale and for further exploiting their functionalities in technologically relevant devices.
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Affiliation(s)
- David Pesquera
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST Campus UAB, Bellaterra, Barcelona 08193, Spain
| | - Abel Fernández
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
| | | | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
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13
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Linker T, Nomura KI, Aditya A, Fukshima S, Kalia RK, Krishnamoorthy A, Nakano A, Rajak P, Shimmura K, Shimojo F, Vashishta P. Exploring far-from-equilibrium ultrafast polarization control in ferroelectric oxides with excited-state neural network quantum molecular dynamics. SCIENCE ADVANCES 2022; 8:eabk2625. [PMID: 35319991 PMCID: PMC8942355 DOI: 10.1126/sciadv.abk2625] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/02/2021] [Accepted: 01/31/2022] [Indexed: 06/14/2023]
Abstract
Ferroelectric materials exhibit a rich range of complex polar topologies, but their study under far-from-equilibrium optical excitation has been largely unexplored because of the difficulty in modeling the multiple spatiotemporal scales involved quantum-mechanically. To study optical excitation at spatiotemporal scales where these topologies emerge, we have performed multiscale excited-state neural network quantum molecular dynamics simulations that integrate quantum-mechanical description of electronic excitation and billion-atom machine learning molecular dynamics to describe ultrafast polarization control in an archetypal ferroelectric oxide, lead titanate. Far-from-equilibrium quantum simulations reveal a marked photo-induced change in the electronic energy landscape and resulting cross-over from ferroelectric to octahedral tilting topological dynamics within picoseconds. The coupling and frustration of these dynamics, in turn, create topological defects in the form of polar strings. The demonstrated nexus of multiscale quantum simulation and machine learning will boost not only the emerging field of ferroelectric topotronics but also broader optoelectronic applications.
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Affiliation(s)
- Thomas Linker
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Ken-ichi Nomura
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Anikeya Aditya
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Shogo Fukshima
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Rajiv K. Kalia
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Aravind Krishnamoorthy
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Aiichiro Nakano
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
| | - Pankaj Rajak
- Amazon, 410 Terry Ave. North, Seattle, WA 98109-5210 USA
| | - Kohei Shimmura
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Fuyuki Shimojo
- Department of Physics, Kumamoto University, Kumamoto 860-8555, Japan
| | - Priya Vashishta
- Collaboratory for Advanced Computing and Simulations, University of Southern California, Los Angeles, CA 90089-0242, USA
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14
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Aryana K, Tomko JA, Gao R, Hoglund ER, Mimura T, Makarem S, Salanova A, Hoque MSB, Pfeifer TW, Olson DH, Braun JL, Nag J, Read JC, Howe JM, Opila EJ, Martin LW, Ihlefeld JF, Hopkins PE. Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO 3). Nat Commun 2022; 13:1573. [PMID: 35322003 PMCID: PMC8943065 DOI: 10.1038/s41467-022-29023-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/07/2021] [Accepted: 02/07/2022] [Indexed: 11/29/2022] Open
Abstract
Materials with tunable thermal properties enable on-demand control of temperature and heat flow, which is an integral component in the development of solid-state refrigeration, energy scavenging, and thermal circuits. Although gap-based and liquid-based thermal switches that work on the basis of mechanical movements have been an effective approach to control the flow of heat in the devices, their complex mechanisms impose considerable costs in latency, expense, and power consumption. As a consequence, materials that have multiple solid-state phases with distinct thermal properties are appealing for thermal management due to their simplicity, fast switching, and compactness. Thus, an ideal thermal switch should operate near or above room temperature, have a simple trigger mechanism, and offer a quick and large on/off switching ratio. In this study, we experimentally demonstrate that manipulating phonon scattering rates can switch the thermal conductivity of antiferroelectric PbZrO3 bidirectionally by -10% and +25% upon applying electrical and thermal excitation, respectively. Our approach takes advantage of two separate phase transformations in PbZrO3 that alter the phonon scattering rate in different manners. In this study, we demonstrate that PbZrO3 can serve as a fast (<1 second), repeatable, simple trigger, and reliable thermal switch with a net switching ratio of nearly 38% from ~1.20 to ~1.65 W m-1 K-1.
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Affiliation(s)
- Kiumars Aryana
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - John A Tomko
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Ran Gao
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Eric R Hoglund
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Takanori Mimura
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Sara Makarem
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Alejandro Salanova
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Md Shafkat Bin Hoque
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Thomas W Pfeifer
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - David H Olson
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Jeffrey L Braun
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Joyeeta Nag
- Western Digital Corporation, San Jose, CA, 95119, USA
| | - John C Read
- Western Digital Corporation, San Jose, CA, 95119, USA
| | - James M Howe
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Elizabeth J Opila
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Jon F Ihlefeld
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
| | - Patrick E Hopkins
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, 22904, USA.
- Department of Physics, University of Virginia, Charlottesville, VA, 22904, USA.
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15
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Philipp HT, Tate MW, Shanks KS, Mele L, Peemen M, Dona P, Hartong R, van Veen G, Shao YT, Chen Z, Thom-Levy J, Muller DA, Gruner SM. Very-High Dynamic Range, 10,000 Frames/Second Pixel Array Detector for Electron Microscopy. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:1-16. [PMID: 35249574 DOI: 10.1017/s1431927622000174] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Precision and accuracy of quantitative scanning transmission electron microscopy (STEM) methods such as ptychography, and the mapping of electric, magnetic, and strain fields depend on the dose. Reasonable acquisition time requires high beam current and the ability to quantitatively detect both large and minute changes in signal. A new hybrid pixel array detector (PAD), the second-generation Electron Microscope Pixel Array Detector (EMPAD-G2), addresses this challenge by advancing the technology of a previous generation PAD, the EMPAD. The EMPAD-G2 images continuously at a frame-rates up to 10 kHz with a dynamic range that spans from low-noise detection of single electrons to electron beam currents exceeding 180 pA per pixel, even at electron energies of 300 keV. The EMPAD-G2 enables rapid collection of high-quality STEM data that simultaneously contain full diffraction information from unsaturated bright-field disks to usable Kikuchi bands and higher-order Laue zones. Test results from 80 to 300 keV are presented, as are first experimental results demonstrating ptychographic reconstructions, strain and polarization maps. We introduce a new information metric, the maximum usable imaging speed (MUIS), to identify when a detector becomes electron-starved, saturated or its pixel count is mismatched with the beam current.
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Affiliation(s)
- Hugh T Philipp
- Laboratory of Atomic and Solid-State Physics (LASSP), Cornell University, Ithaca, NY, USA
| | - Mark W Tate
- Laboratory of Atomic and Solid-State Physics (LASSP), Cornell University, Ithaca, NY, USA
| | - Katherine S Shanks
- Laboratory of Atomic and Solid-State Physics (LASSP), Cornell University, Ithaca, NY, USA
- Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY, USA
| | - Luigi Mele
- R&D Laboratory, Thermo-Fisher Scientific, Achtseweg Noord 5, 5651GGEindhoven, The Netherlands
| | - Maurice Peemen
- R&D Laboratory, Thermo-Fisher Scientific, Achtseweg Noord 5, 5651GGEindhoven, The Netherlands
| | - Pleun Dona
- R&D Laboratory, Thermo-Fisher Scientific, Achtseweg Noord 5, 5651GGEindhoven, The Netherlands
| | - Reinout Hartong
- R&D Laboratory, Thermo-Fisher Scientific, Achtseweg Noord 5, 5651GGEindhoven, The Netherlands
| | - Gerard van Veen
- R&D Laboratory, Thermo-Fisher Scientific, Achtseweg Noord 5, 5651GGEindhoven, The Netherlands
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Zhen Chen
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Julia Thom-Levy
- Laboratory for Elementary-Particle Physics (LEPP), Cornell University, Ithaca, NY, USA
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
| | - Sol M Gruner
- Laboratory of Atomic and Solid-State Physics (LASSP), Cornell University, Ithaca, NY, USA
- Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA
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16
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Zang Y, Di C, Geng Z, Yan X, Ji D, Zheng N, Jiang X, Fu H, Wang J, Guo W, Sun H, Han L, Zhou Y, Gu Z, Kong D, Aramberri H, Cazorla C, Íñiguez J, Rurali R, Chen L, Zhou J, Wu D, Lu M, Nie Y, Chen Y, Pan X. Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2105778. [PMID: 34676925 DOI: 10.1002/adma.202105778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2021] [Revised: 10/13/2021] [Indexed: 06/13/2023]
Abstract
Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron-phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron-phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron-phonon-mediated thermal coupling, providing a new route to optimize the thermal transport performance in next-generation nanodevices, power electronics, and thermal logic devices.
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Affiliation(s)
- Yipeng Zang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chen Di
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhiming Geng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xuejun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Dianxiang Ji
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Ningchong Zheng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xingyu Jiang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hanyu Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Jianjun Wang
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Wei Guo
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Lu Han
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yunlei Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Zhengbin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Desheng Kong
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Hugo Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch/Alzette, L-4362, Luxembourg
| | - Claudio Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, Barcelona, E-08034, Spain
| | - Jorge Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Avenue des Hauts-Fourneaux 5, Esch/Alzette, L-4362, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, 41 Rue du Brill, Belvaux, L-4422, Luxembourg
| | - Riccardo Rurali
- Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, Bellaterra, 08193, Spain
| | - Longqing Chen
- Department of Materials Science and Engineering, Pennsylvania State University, State College, PA, 16802, USA
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Di Wu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Minghui Lu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yanfeng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Science Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Xiaoqing Pan
- Department of Materials Science and Engineering and Department of Physics and Astronomy, University of California, Irvine, 916 Engineering Tower, Irvine, CA, 92697, USA
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17
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Bugallo D, Langenberg E, Carbó-Argibay E, Varela Dominguez N, Fumega AO, Pardo V, Lucas I, Morellón L, Rivadulla F. Tuning Coherent-Phonon Heat Transport in LaCoO 3/SrTiO 3 Superlattices. J Phys Chem Lett 2021; 12:11878-11885. [PMID: 34875171 PMCID: PMC8686111 DOI: 10.1021/acs.jpclett.1c03418] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/18/2021] [Accepted: 12/03/2021] [Indexed: 06/13/2023]
Abstract
Accessing the regime of coherent phonon propagation in nanostructures opens enormous possibilities to control the thermal conductivity in energy harvesting devices, phononic circuits, etc. In this paper we show that coherent phonons contribute substantially to the thermal conductivity of LaCoO3/SrTiO3 oxide superlattices, up to room temperature. We show that their contribution can be tuned through small variations of the superlattice periodicity, without changing the total superlattice thickness. Using this strategy, we tuned the thermal conductivity by 20% at room temperature. We also discuss the role of interface mixing and epitaxial relaxation as an extrinsic, material dependent key parameter for understanding the thermal conductivity of oxide superlattices.
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Affiliation(s)
- D. Bugallo
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, 15782 Santiago
de Compostela, Spain
| | - E. Langenberg
- Department
of Condensed Matter Physics, Institute of Nanoscience and Nanotechnology
(IN2UB), University of Barcelona, 08020 Barcelona, Spain
| | - E. Carbó-Argibay
- International
Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga s/n, 4715-330 Braga, Portugal
| | - Noa Varela Dominguez
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, 15782 Santiago
de Compostela, Spain
| | - A. O. Fumega
- Departamento
de Física Aplicada, Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
- Department
of Applied Physics, Aalto University, FI-00076 Aalto, Finland
| | - V. Pardo
- Departamento
de Física Aplicada, Universidade
de Santiago de Compostela, 15782 Santiago de Compostela, Spain
| | - Irene Lucas
- Instituto
de Nanociencia y Materiales de Aragón (INMA), Universidad de Zaragoza and Consejo Superior de Investigaciones Científicas, 50009 Zaragoza, Spain
| | - Luis Morellón
- Instituto
de Nanociencia y Materiales de Aragón (INMA), Universidad de Zaragoza and Consejo Superior de Investigaciones Científicas, 50009 Zaragoza, Spain
| | - F. Rivadulla
- Centro
Singular de Investigación en Química Biolóxica
e Materiais Moleculares (CIQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, 15782 Santiago
de Compostela, Spain
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18
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Bugallo D, Langenberg E, Ferreiro-Vila E, Smith EH, Stefani C, Batlle X, Catalan G, Domingo N, Schlom DG, Rivadulla F. Deconvolution of Phonon Scattering by Ferroelectric Domain Walls and Point Defects in a PbTiO 3 Thin Film Deposited in a Composition-Spread Geometry. ACS APPLIED MATERIALS & INTERFACES 2021; 13:45679-45685. [PMID: 34523338 DOI: 10.1021/acsami.1c08758] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We present a detailed analysis of the temperature dependence of the thermal conductivity of a ferroelectric PbTiO3 thin film deposited in a composition-spread geometry enabling a continuous range of compositions from ∼25% titanium deficient to ∼20% titanium rich to be studied. By fitting the experimental results to the Debye model we deconvolute and quantify the two main phonon-scattering sources in the system: ferroelectric domain walls (DWs) and point defects. Our results prove that ferroelectric DWs are the main agent limiting the thermal conductivity in this system, not only in the stoichiometric region of the thin film ([Pb]/[Ti] ≈ 1) but also when the concentration of the cation point defects is significant (up to ∼15%). Hence, DWs in ferroelectric materials are a source of phonon scattering at least as effective as point defects. Our results demonstrate the viability and effectiveness of using reconfigurable DWs to control the thermal conductivity in solid-state devices.
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Affiliation(s)
- David Bugallo
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
| | - Eric Langenberg
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Department de Física de la Matèria Condensada and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, Barcelona 08028, Spain
| | - Elias Ferreiro-Vila
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
| | - Eva H Smith
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Christina Stefani
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, Barcelona 08193 Spain
| | - Xavier Batlle
- Department de Física de la Matèria Condensada and Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, Barcelona 08028, Spain
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, Barcelona 08193 Spain
| | - Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, Barcelona 08193 Spain
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
- Leibniz-Institut für Kristallzüchtung, Max-Born-Strasse 2, 12489 Berlin, Germany
| | - Francisco Rivadulla
- Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares (CiQUS), Departamento de Química-Física, Universidade de Santiago de Compostela, Santiago de Compostela 15782, Spain
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19
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Chen S, Yuan S, Hou Z, Tang Y, Zhang J, Wang T, Li K, Zhao W, Liu X, Chen L, Martin LW, Chen Z. Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2000857. [PMID: 32815214 DOI: 10.1002/adma.202000857] [Citation(s) in RCA: 27] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2020] [Revised: 04/17/2020] [Indexed: 06/11/2023]
Abstract
Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.
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Affiliation(s)
- Shanquan Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Shuai Yuan
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yunlong Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Jinping Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Tao Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Kang Li
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Weiwei Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Xingjun Liu
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Lang Chen
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China
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20
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Wang J, Yang T, Wang B, Rzchowski MS, Eom C, Chen L. Strain‐Induced Interlayer Parallel‐to‐Antiparallel Magnetic Transitions of Twisted Bilayers. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202000215] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Jian‐Jun Wang
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
| | - Tian‐Nan Yang
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
| | - Bo Wang
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
| | - Mark S. Rzchowski
- Department of Physics University of Wisconsin‐Madison Madison WI 53706 USA
| | - Chang‐Beom Eom
- Department of Materials Science and Engineering University of Wisconsin‐Madison Madison WI 53706 USA
| | - Long‐Qing Chen
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
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21
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Langenberg E, Paik H, Smith EH, Nair HP, Hanke I, Ganschow S, Catalan G, Domingo N, Schlom DG. Strain-Engineered Ferroelastic Structures in PbTiO 3 Films and Their Control by Electric Fields. ACS APPLIED MATERIALS & INTERFACES 2020; 12:20691-20703. [PMID: 32292024 DOI: 10.1021/acsami.0c04381] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We study the interplay between epitaxial strain, film thickness, and electric field in the creation, modification, and design of distinct ferroelastic structures in PbTiO3 thin films. Strain and thickness greatly affect the structures formed, providing a two-variable parameterization of the resulting self-assembly. Under applied electric fields, these strain-engineered ferroelastic structures are highly malleable, especially when a/c and a1/a2 superdomains coexist. To reconfigure the ferroelastic structures and achieve self-assembled nanoscale-ordered morphologies, pure ferroelectric switching of individual c-domains within the a/c superdomains is essential. The stability, however, of the electrically written ferroelastic structures is in most cases ephemeral; the speed of the relaxation process depends sensitively on strain and thickness. Only under low tensile strain-as is the case for PbTiO3 on GdScO3-and below a critical thickness do the electrically created a/c superdomain structures become stable for days or longer, making them relevant for reconfigurable nanoscale electronics or nonvolatile electromechanical applications.
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Affiliation(s)
- Eric Langenberg
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hanjong Paik
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Eva H Smith
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Hari P Nair
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
| | - Isabelle Hanke
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Steffen Ganschow
- Leibniz-Institut für Kristallzüchtung, Max-Born-Straße 2, 12489 Berlin, Germany
| | - Gustau Catalan
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Neus Domingo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC, Barcelona Institute of Science and Technology, Campus Universitat Autònoma de Barcelona, Bellaterra, 08193 Barcelona, Spain
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States
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22
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Padgett E, Holtz ME, Cueva P, Shao YT, Langenberg E, Schlom DG, Muller DA. The exit-wave power-cepstrum transform for scanning nanobeam electron diffraction: robust strain mapping at subnanometer resolution and subpicometer precision. Ultramicroscopy 2020; 214:112994. [PMID: 32413681 DOI: 10.1016/j.ultramic.2020.112994] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/06/2019] [Revised: 03/01/2020] [Accepted: 04/04/2020] [Indexed: 10/24/2022]
Abstract
Scanning nanobeam electron diffraction (NBED) with fast pixelated detectors is a valuable technique for rapid, spatially resolved mapping of lattice structure over a wide range of length scales. However, intensity variations caused by dynamical diffraction and sample mistilts can hinder the measurement of diffracted disk centers as necessary for quantification. Robust data processing techniques are needed to provide accurate and precise measurements for complex samples and non-ideal conditions. Here we present an approach to address these challenges using a transform, called the exit wave power cepstrum (EWPC), inspired by cepstral analysis in audio signal processing. The EWPC transforms NBED patterns into real-space patterns with sharp peaks corresponding to inter-atomic spacings. We describe a simple analytical model for interpretation of these patterns that cleanly decouples lattice information from the intensity variations in NBED patterns caused by tilt and thickness. By tracking the inter-atomic spacing peaks in EWPC patterns, strain mapping is demonstrated for two practical applications: mapping of ferroelectric domains in epitaxially strained PbTiO3 films and mapping of strain profiles in arbitrarily oriented core-shell Pt-Co nanoparticle fuel-cell catalysts. The EWPC transform enables lattice structure measurement at sub-pm precision and sub-nm resolution that is robust to small sample mistilts and random orientations.
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Affiliation(s)
- Elliot Padgett
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States
| | - Megan E Holtz
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States; Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States
| | - Paul Cueva
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States
| | - Yu-Tsun Shao
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States
| | - Eric Langenberg
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853, United States; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, United States
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, United States; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, United States.
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