1
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Guo TT, Chen JB, Yang CY, Zhang P, Jia SJ, Li Y, Chen JT, Zhao Y, Wang J, Zhang XQ. Artificial Neural Synapses Based on Microfluidic Memristors Prepared by Capillary Tubes and Ionic Liquid. J Phys Chem Lett 2024; 15:2542-2549. [PMID: 38413398 DOI: 10.1021/acs.jpclett.3c03184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/29/2024]
Abstract
Neuromorphic simulation, i.e., the use of electronic devices to simulate the neural networks of the human brain, has attracted a lot of interest in the fields of data processing and memory. This work provides a new method for preparing a 1,3-dimethylimidazolium nitrate ([MMIm][NO3]:H2O) microfluidic memristor that is ultralow cost and technically uncomplicated. Such a fluidic device uses capillaries as memory tubes, which are structurally similar to interconnected neurons by simple solution treatment. When voltage is applied, the transmission of anions and cations in the tube corresponds to the release of neurotransmitters from the presynaptic membrane to the postsynaptic membrane. The change of synaptic weights (plasticity) also can be simulated by the gradual change of conductance of the fluid memristor. The learning process of microfluidic memristors is very obvious, and the habituation and recovery behaviors they exhibit are extremely similar to biological activities, representing its good use for simulating neural synapses.
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Affiliation(s)
- Tong-Tong Guo
- College of Chemistry and Chemical Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jian-Biao Chen
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Chun-Yan Yang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Pu Zhang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Shuang-Ju Jia
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yan Li
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jiang-Tao Chen
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Yun Zhao
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Jian Wang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
| | - Xu-Qiang Zhang
- Key Laboratory of Atomic & Molecular Physics and Functional Materials of Gansu Province, College of Physics and Electronic Engineering, Northwest Normal University, Lanzhou 730070, China
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Liu X, Sun C, Ye X, Zhu X, Hu C, Tan H, He S, Shao M, Li RW. Neuromorphic Nanoionics for Human-Machine Interaction: From Materials to Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2311472. [PMID: 38421081 DOI: 10.1002/adma.202311472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 02/06/2024] [Indexed: 03/02/2024]
Abstract
Human-machine interaction (HMI) technology has undergone significant advancements in recent years, enabling seamless communication between humans and machines. Its expansion has extended into various emerging domains, including human healthcare, machine perception, and biointerfaces, thereby magnifying the demand for advanced intelligent technologies. Neuromorphic computing, a paradigm rooted in nanoionic devices that emulate the operations and architecture of the human brain, has emerged as a powerful tool for highly efficient information processing. This paper delivers a comprehensive review of recent developments in nanoionic device-based neuromorphic computing technologies and their pivotal role in shaping the next-generation of HMI. Through a detailed examination of fundamental mechanisms and behaviors, the paper explores the ability of nanoionic memristors and ion-gated transistors to emulate the intricate functions of neurons and synapses. Crucial performance metrics, such as reliability, energy efficiency, flexibility, and biocompatibility, are rigorously evaluated. Potential applications, challenges, and opportunities of using the neuromorphic computing technologies in emerging HMI technologies, are discussed and outlooked, shedding light on the fusion of humans with machines.
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Affiliation(s)
- Xuerong Liu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Cui Sun
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaoyu Ye
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Xiaojian Zhu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Cong Hu
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hongwei Tan
- Department of Applied Physics, Aalto University, Aalto, FI-00076, Finland
| | - Shang He
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Mengjie Shao
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Run-Wei Li
- CAS Key Laboratory of Magnetic Materials and Devices, and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
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Kamath R, Sarkar P, Melanthota SK, Biswas R, Mazumder N, De S. Resistive Memory-Switching Behavior in Solution-Processed Trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) Benzene-PVA-Composite-Based Aryl Acrylate on ITO-Coated PET. Polymers (Basel) 2024; 16:218. [PMID: 38257018 PMCID: PMC10818758 DOI: 10.3390/polym16020218] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/14/2023] [Revised: 11/10/2023] [Accepted: 11/14/2023] [Indexed: 01/24/2024] Open
Abstract
Resistive switching memories are among the emerging next-generation technologies that are possible candidates for in-memory and neuromorphic computing. In this report, resistive memory-switching behavior in solution-processed trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate on an ITO-coated PET device was studied. A sandwich configuration was selected, with silver (Ag) serving as a top contact and trans, trans-1,4-bis-(2-(2-naphthyl)-2-(butoxycarbonyl)-vinyl) benzene-PVA-composite-based aryl acrylate and ITO-PET serving as a bottom contact. The current-voltage (I-V) characteristics showed hysteresis behavior and non-zero crossing owing to voltages sweeping from positive to negative and vice versa. The results showed non-zero crossing in the devices' current-voltage (I-V) characteristics due to the nanobattery effect or resistance, capacitive, and inductive effects. The device also displayed a negative differential resistance (NDR) effect. Non-volatile storage was feasible with non-zero crossing due to the exhibition of resistive switching behavior. The sweeping range was -10 V to +10 V. These devices had two distinct states: 'ON' and 'OFF'. The ON/OFF ratios of the devices were 14 and 100 under stable operating conditions. The open-circuit voltages (Voc) and short-circuit currents (Isc) corresponding to memristor operation were explained. The DC endurance was stable. Ohmic conduction and direct tunneling mechanisms with traps explained the charge transport model governing the resistive switching behavior. This work gives insight into data storage in terms of a new conception of electronic devices based on facile and low-temperature processed material composites for emerging computational devices.
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Affiliation(s)
- Rachana Kamath
- Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India;
| | - Parantap Sarkar
- Manipal Centre for Natural Sciences, Manipal Academy of Higher Education, Dr. T. M. A. Pai Planetarium Building, Madhav Nagar, Manipal 576104, Karnataka, India;
| | - Sindhoora Kaniyala Melanthota
- Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India; (S.K.M.); (N.M.)
| | - Rajib Biswas
- Department of Physics, Tezpur University, Tezpur 784028, Assam, India;
| | - Nirmal Mazumder
- Department of Biophysics, Manipal School of Life Sciences, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India; (S.K.M.); (N.M.)
| | - Shounak De
- Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal 576104, Karnataka, India;
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Patil PP, Kundale SS, Patil SV, Sutar SS, Bae J, Kadam SJ, More KV, Patil PB, Kamat RK, Lee S, Dongale TD. Self-Assembled Lanthanum Oxide Nanoflakes by Electrodeposition Technique for Resistive Switching Memory and Artificial Synaptic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303862. [PMID: 37452406 DOI: 10.1002/smll.202303862] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2023] [Revised: 06/23/2023] [Indexed: 07/18/2023]
Abstract
In recent years, many metal oxides have been rigorously studied to be employed as solid electrolytes for resistive switching (RS) devices. Among these solid electrolytes, lanthanum oxide (La2 O3 ) is comparatively less explored for RS applications. Given this, the present work focuses on the electrodeposition of La2 O3 switching layers and the investigation of their RS properties for memory and neuromorphic computing applications. Initially, the electrodeposited La2 O3 switching layers are thoroughly characterized by various analytical techniques. The electrochemical impedance spectroscopy (EIS) and Mott-Schottky techniques are probed to understand the in situ electrodeposition, RS mechanism, and n-type semiconducting nature of the fabricated La2 O3 switching layers. All the fabricated devices exhibit bipolar RS characteristics with excellent endurance and stable retention. Moreover, the device mimics the various bio-synaptic properties such as potentiation-depression, excitatory post-synaptic currents, and paired-pulse facilitation. It is demonstrated that the fabricated devices are non-ideal memristors based on double-valued charge-flux characteristics. The switching variation of the device is studied using the Weibull distribution technique and modeled and predicted by the time series analysis technique. Based on electrical and EIS results, a possible filamentary-based RS mechanism is suggested. The present results assert that La2 O3 is a promising solid electrolyte for memory and brain-inspired applications.
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Affiliation(s)
- Pradnya P Patil
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Somnath S Kundale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
| | - Shubham V Patil
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea
| | - Santosh S Sutar
- Yashwantrao Chavan School of Rural Development, Shivaji University, Kolhapur, 416004, India
| | - Junseong Bae
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea
| | - Sunil J Kadam
- Department of Mechanical Engineering, Bharati Vidyapeeth's College of Engineering, Kolhapur, 416013, India
| | - Krantiveer V More
- Department of Chemistry, Shivaji University, Kolhapur, 416012, India
| | - Prashant B Patil
- Department of Physics, The New College, Shivaji University, Kolhapur, 416012, India
| | - Rajanish K Kamat
- Department of Electronics, Shivaji University, Kolhapur, 416004, India
- Institute of Science, Dr. Homi Bhabha State University, 15, Madam Cama Road, Mumbai, 400032, India
| | - Seunghyun Lee
- Department of Electronic Engineering, Kyung Hee University, Yongin, 17107, Republic of Korea
| | - Tukaram D Dongale
- Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004, India
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5
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Desai TR, Kundale SS, Dongale TD, Gurnani C. Evaluation of Cellulose–MXene Composite Hydrogel Based Bio-Resistive Random Access Memory Material as Mimics for Biological Synapses. ACS APPLIED BIO MATERIALS 2023; 6:1763-1773. [PMID: 36976913 DOI: 10.1021/acsabm.2c01073] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
We report a memory device based on organic-inorganic hybrid cellulose-Ti3C2TX MXene composite hydrogel (CMCH) as a switching layer sandwiched between Ag top and FTO bottom electrodes. The device (Ag/CMCH/FTO) was fabricated by a simple, solution-processed route and exhibits reliable and reproducible bipolar resistive switching. Multilevel switching behavior was observed at low operating voltages (±0.5 to ±1 V). Furthermore, the capacitive-coupled memristive characteristics of the device were corroborated with electrochemical impedance spectroscopy and this affirmed the filamentary conduction switching mechanism (LRS-HRS). The synaptic functions of the CMCH-based memory device were evaluated, wherein potentiation/depression properties over 8 × 103 electric pulses were observed. The device also exhibited spike time-dependent plasticity-based symmetric Hebbian learning rule of a biological synapse. This hybrid hydrogel is expected to be a potential switching material for low-cost, sustainable, and biocompatible memory storage devices and artificial synaptic applications.
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6
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Xu J, Zhao X, Zhao X, Wang Z, Tang Q, Xu H, Liu Y. Memristors with Biomaterials for Biorealistic Neuromorphic Applications. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202200028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022] Open
Affiliation(s)
- Jiaqi Xu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Xiaoning Zhao
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Xiaoli Zhao
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Zhongqiang Wang
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Qingxin Tang
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Haiyang Xu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
| | - Yichun Liu
- Key Laboratory of UV Light-Emitting Materials and Technology of Ministry of Education Northeast Normal University Changchun 130024 China
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7
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Mao S, Sun B, Zhou G, Guo T, Wang J, Zhao Y. Applications of biomemristors in next generation wearable electronics. NANOSCALE HORIZONS 2022; 7:822-848. [PMID: 35697026 DOI: 10.1039/d2nh00163b] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
With the rapid development of mobile internet and artificial intelligence, wearable electronic devices have a great market prospect. In particular, information storage and processing of real-time collected data are an indispensable part of wearable electronic devices. Biomaterial-based memristive systems are suitable for storage and processing of the obtained information in wearable electronics due to the accompanying merits, i.e. sustainability, lightweight, degradability, low power consumption, flexibility and biocompatibility. So far, many biomaterial-based flexible and wearable memristive devices were prepared by spin coating or other technologies on a flexible substrate at room temperature. However, mechanical deformation caused by mechanical mismatch between devices and soft tissues leads to the instability of device performance. From the current research and practical application, the device will face great challenges when adapting to different working environments. In fact, some interesting studies have been performed to address the above issues while they were not intensively highlighted and overviewed. Herein, the progress in wearable biomemristive devices is reviewed, and the outlook and perspectives are provided in consideration of the existing challenges during the development of wearable biomemristive systems.
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Affiliation(s)
- Shuangsuo Mao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
| | - Bai Sun
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Guangdong Zhou
- Scholl of Artificial Intelligence, Southwest University, Chongqing, 400715, China
| | - Tao Guo
- Department of Mechanical and Mechatronics Engineering, Waterloo Institute for Nanotechnology, Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Jiangqiu Wang
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
| | - Yong Zhao
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fujian Normal University, Fuzhou, Fujian 350117, China.
- College of Physics and Energy, Fujian Normal University, Fuzhou, Fujian 351007, China
- School of Physical Science and Technology, Key Laboratory of Advanced Technology of Materials, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
- Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China
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8
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Saha M, Nawaz SM, Keshari BK, Mallik A. Natural-Casein-Based Biomemristor with Pinched Current-Voltage Characteristics. ACS APPLIED BIO MATERIALS 2022; 5:833-840. [PMID: 35044766 DOI: 10.1021/acsabm.1c01188] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Abstract
A biomaterials based memristor is of great interest for applications in the environment and human friendly electronic systems. Although a pinched current-voltage (I-V) characteristic is a signature of Chua's memristor model, biomemristors generally exhibit nonpinched I-V response. This work reports the discovery of the pinched I-V characteristics of a natural casein-based biomemristor. Water-soluble sodium caseinate (NaCas), synthesized using natural casein that was extracted from edible animal milk, was used for the fabrication of a Al/NaCas/ITO biomemristor device. In addition to pinched I-V characteristics, the Al/NaCas/ITO device shows improved performance with a sufficiently large resistance window (∼20 times), longer retention time (∼105 s), and comparable cyclic endurance (>180 cycles), as compared with the reported biomemristors reported in the literature. A physical mechanism is proposed to explain the device characteristics.
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Affiliation(s)
- Mainak Saha
- Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009, India
| | - Sk Masum Nawaz
- Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009, India
| | - Bishal Kumar Keshari
- Technical Research Centre, S. N. Bose National Centre for Basic Sciences, Kolkata 700106, India
| | - Abhijit Mallik
- Department of Electronic Science, University of Calcutta, 92 A.P.C. Road, Kolkata 700009, India
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Wang L, Wang Y, Wen D. Tunable biological nonvolatile multilevel data storage devices. Phys Chem Chem Phys 2021; 23:24834-24841. [PMID: 34719695 DOI: 10.1039/d1cp04622e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The speed with which electronic products are updated is continuously increasing. Consequently, since waste electronic products can cause serious environmental pollution, the demand for electronic products made of biological materials is becoming increasingly urgent. Although biological memristors have significant advantages, their electrical characteristics still do not meet the requirements to be used in future nonvolatile memories. Therefore, how to control their electrical characteristics has become a popular topic of research. In this study, tunable biomemristors with an Al/tussah blood (TB)-carbon nanotube (CNT)/indium tin oxide (ITO)/glass structure were fabricated. Such a device exhibits stable bipolar resistance switching behavior and good retention characteristics (104 s). Experimental results show that the ON/OFF current ratio can be effectively controlled by modifying the CNT concentration in the TB-CNT composite film. Multilevel (8 levels, 3 bits per cell) storage capabilities can be achieved in the device by controlling its compliance current in order to achieve high-density storage. The resistance switching behavior originates from the formation and rupture of conductive oxygen vacancy filaments. TB is a promising natural biomaterial in the field of green electronics, and this research could blaze a new trail for the development of biological memory devices. Biomemristors with multilevel resistance states can be used as electronic synapses and are one of the choices for simulating biological synapses.
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Affiliation(s)
- Lu Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Yuting Wang
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
| | - Dianzhong Wen
- School of Electronic Engineering, Heilongjiang University, Harbin, 150080, China. .,HLJ Province Key Laboratory of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China
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10
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Arshad N, Irshad MS, Abbasi MS, Ur Rehman S, Ahmed I, Javed MQ, Ahmad S, Sharaf M, Al Firdausi MD. Green thin film for stable electrical switching in a low-cost washable memory device: proof of concept. RSC Adv 2021; 11:4327-4338. [PMID: 35424390 PMCID: PMC8694386 DOI: 10.1039/d0ra08784j] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/15/2020] [Accepted: 12/26/2020] [Indexed: 11/21/2022] Open
Abstract
Low-cost and washable resistive switching (RS) memory devices with stable retention and low operational voltage are important for higher speed and denser non-volatile memories. In the case of green electronics, pectin has emerged as a suitable alternative to toxic metal oxides for resistive switching applications. Herein, a pectin-based thin film was fabricated on a fluorine-doped tin oxide glass substrate for RS mechanism. The presence of sp3-C groups with low binding energy corresponds to tunable charged defects and the oxygen vacancies confirmed by the O 1s spectra that plays a decisive role in the resistive switching mechanism, as revealed by X-ray photoemission spectroscopy (XPS). The surface morphology of the pectin film shows homogeneous growth and negligible surface roughness (38.98 ± 9.09). The pectin film can dissolve in DI water (10 minutes) owing to its ionization of carboxylic groups, that meet the trends of transient electronics. The developed Ag/pectin/FTO-based memory cell exhibits stable and reproducible bipolar resistive switching behavior along with an excellent ON/OFF ratio (104) and negligible electrical degradation was observed over 30 repeated cycles. Hence, it appears to be a valuable application for green electronics. Indeed, biocompatible storage devices derived from natural pectin are promising for high-density safe applications for information storage systems, flexible electronics, and green electronics.
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Affiliation(s)
- Naila Arshad
- Institute of Quantum Optics and Quantum Information, School of Science, Xi'an Jiaotong University (XJTU) 710049 P. R. China
| | - Muhammad Sultan Irshad
- Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials, School of Materials Science and Engineering, Hubei University Wuhan 430062 P. R. China +86-156-23138982
| | - Misbah Sehar Abbasi
- School of Energy and Power Engineering, Xi'an Jiaotong University (XJTU) 710049 P. R. China
| | - Saif Ur Rehman
- Clean Energy Technology Research Lab (CERL, ), Department of Physics, COMSATS University Islamabad Lahore Campus 54000 Pakistan
| | - Iftikhar Ahmed
- Energy Research Centre, COMSATS University Islamabad Lahore Campus 54000 Lahore Pakistan +92-321-8856761
| | - M Qasim Javed
- Food and Biotechnology Research Center (FBRC), Pakistan Council of Scientific and Industrial Research Lahore 54000 Pakistan
| | - Shafiq Ahmad
- Department of Industrial Engineering, College of Engineering, King Saud University Riyadh Saudi Arabia
| | - Mohamed Sharaf
- Department of Industrial Engineering, College of Engineering, King Saud University Riyadh Saudi Arabia
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11
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Naik SG, Rabinal MHK. Compositional tuning of negative differential resistance in a bulk silver iodide memristor. NEW J CHEM 2021. [DOI: 10.1039/d0nj05427e] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Silver iodide a negative differential resistance (NDR) memristor
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12
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Abbasi M, Irshad MS, Arshad N, Ahmed I, Idrees M, Ahmad S, Wei Z, Sharaf M, Al Firdausi MD. Biomaterial-Induced Stable Resistive Switching Mechanism in TiO 2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity. ACS OMEGA 2020; 5:19050-19060. [PMID: 32775907 PMCID: PMC7408193 DOI: 10.1021/acsomega.0c02410] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/22/2020] [Accepted: 07/10/2020] [Indexed: 06/11/2023]
Abstract
Leakage of current in oxide layers is the main issue for higher speed and denser resistive random-access memory. Defect engineering played a substantial role in meeting this challenge by doping or producing controlled interstitial defects or active sites. These controlled active sites enabled memory cells to form a stable and reproducible conduction filament following an electrochemical metallization model. In this study, a defect-abundant lime peel extract (LPE)-mediated anatase TiO2 thin film was fabricated using a simple hydrothermal route. The detailed structural and morphological analysis of the bioactive anatase TiO2-LPE thin film reveals the homogeneous growth of TiO2 flowers and distinct features in terms of controlled defects as compared to simple anatase TiO2. These interstitial defects (Ti+3 and Ti+4) behave as active sites for cation migrations along highly conductive K1+ ions because of the mediation of LPE. The defect-free surface reveals slight surface roughness (4.8 nm) that successfully minimizes leakage of current. The strategy enabled a reliable conductive bridge filament, which can replicate with no more electric degradation. The Ag/TiO2-LPE/FTO-based memory cell demonstrates reproducible bipolar resistive switching along with a high ON/OFF ratio (>105), excellent endurance (1.5 × 103 cycles), and long-term retention (105 s) without any electrical degradation. Furthermore, green-synthesized TiO2-LPE nanoparticles have shown superior antibacterial activity as compared to other green syntheses of different plants or fruits against the toxic microorganisms present in inorganic media.
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Affiliation(s)
- Misbah
Sehar Abbasi
- School
of Energy and Power Engineering, Xi’an
Jiaotong University, (XJTU), Xi’an 710049, China
| | - Muhammad Sultan Irshad
- Ministry-of-Education
Key Laboratory for the Green Preparation and Application of Functional
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China
| | - Naila Arshad
- Institute
of Quantum Optics and Quantum Information, School of Science, Xi’an Jiaotong University, (XJTU), Xi’an 710049, China
| | - Iftikhar Ahmed
- Energy
Research Centre, COMSATS University Islamabad, Lahore Campus, 54000 Lahore, Pakistan
| | - Muhammad Idrees
- Department
of Physics, COMSATS University Islamabad, Lahore Campus, 54000 Lahore, Pakistan
| | - Shafiq Ahmad
- Department
of Industrial Engineering, College of Engineering, King Saud University, Riyadh 11564, Saudi Arabia
| | - Zhou Wei
- Ministry-of-Education
Key Laboratory for the Green Preparation and Application of Functional
Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, P. R. China
| | - Mohamed Sharaf
- Department
of Industrial Engineering, College of Engineering, King Saud University, Riyadh 11564, Saudi Arabia
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13
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Zhu S, Zhou G, Yuan W, Mao S, Yang F, Fu G, Sun B. Non-zero-crossing current-voltage hysteresis behavior induced by capacitive effects in bio-memristor. J Colloid Interface Sci 2020; 560:565-571. [DOI: 10.1016/j.jcis.2019.10.087] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/12/2019] [Revised: 10/17/2019] [Accepted: 10/23/2019] [Indexed: 02/07/2023]
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14
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Qi Y, Sun B, Fu G, Li T, Zhu S, Zheng L, Mao S, Kan X, Lei M, Chen Y. A nonvolatile organic resistive switching memory based on lotus leaves. Chem Phys 2019. [DOI: 10.1016/j.chemphys.2018.09.008] [Citation(s) in RCA: 23] [Impact Index Per Article: 4.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/28/2022]
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15
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Mao S, Sun B, Yu T, Mao W, Zhu S, Ni Y, Wang H, Zhao Y, Chen Y. pH-Modulated memristive behavior based on an edible garlic-constructed bio-electronic device. NEW J CHEM 2019. [DOI: 10.1039/c9nj02433f] [Citation(s) in RCA: 18] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
A new type of memristive memory device with an edible garlic-constructed Ag/garlic/fluorine-doped SnO2(FTO) structure for analog neuromorphic sensor applications was designed.
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Affiliation(s)
- Shuangsuo Mao
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
| | - Bai Sun
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
| | - Tian Yu
- College of Physical Science and Technology
- Sichuan University
- Chengdu 610064
- China
| | - Weiwei Mao
- School of Science
- Nanjing University of Posts and Telecommunications (NUPT)
- Nanjing 210023
- China
| | - Shouhui Zhu
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
| | - Yuxiang Ni
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
| | - Hongyan Wang
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
| | - Yong Zhao
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
| | - Yuanzheng Chen
- School of Physical Science and Technology
- Superconductivity and New Energy R&D Center (SNERDC)
- Southwest Jiaotong University
- Chengdu 610031
- China
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