Ultrasensitive UV Photodetector Based on Interfacial Charge-Controlled Inorganic Perovskite-Polymer Hybrid Structure

A high responsivity, high detectivity, and high response speed MSM UVB photodetector based on SnO2 microwires

We report a high performance UVB photodetector with a metal-semiconductor-metal device structure based on high crystal quality SnO₂ microwires prepared by chemical vapor deposition. Under 10 V bias, a low dark current of 3.69 × 10^-9 A and a high light-to-dark current ratio of 1630 were achieved. The device showed a high responsivity of about 1353.0 A·W^-1 under 322 nm light illumination. The detectivity of the device is as high as 5.4 × 10¹⁴ Jones, which ensures the detection of weak signals in the UVB spectral region. Due to the small amount of deep-level defect-induced carrier recombination, the light response rise time and fall time are shorter than 0.08 s.

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable that the practical application of WBS-based UVPDs is largely limited by the relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD that is very sensitive to UVB light illumination. The Si NWs with a diameter of about 36 nm are fabricated by a metal-assisted chemical etching method. Performance analysis revealed that the Si NW device was only sensitive to UVB light and almost blind to illumination in the visible and near-infrared regions. Such abnormal spectral selectivity was associated with the leakage mode resonances (LMRs) of the small diameter, according to our theoretical simulation. Under 300 nm illumination, the responsivity, external quantum efficiency, and specific detectivity were estimated to be 10.2 AW^-1, 4.22 × 10³%, and 2.14 × 10¹⁰ Jones, respectively, which were comparable to or even higher than those of some WBS-based UVPDs. These results illustrate that the small dimension Si NWs are potential building blocks for low-cost and high-performance UVPDs in the future.

Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal-Semiconductor-Metal Photodetectors with Liquid-Phase Procedure

Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced by 16.3% with pyramid-like structures. In this study, semitransparent, conductive Ag paste electrodes were manufactured using a screen-printing with liquid-phase process to form a flexible MSM broadband visible light photodetector. The transmittance of the homemade Ag paste solution fell between 34.83% and 36.98% in the wavelength range of visible light, from 400 nm to 800 nm. The highest visible light photosensitivity was 1.75 × 10⁴ at 19.5 W/m². The photocurrents of the flexible MSM broadband visible light photodetector were slightly changed under concave and convex conditions, displaying stable and durable bending properties.

Interfacial Gradient-Energy-Band-Alignment Modulation via a Vapor-Phase Anion-Exchange Reaction toward Lead-Free Perovskite Photodetectors with Excellent UV Imaging Capability

Bi-based inorganic perovskites have attracted great attention in optoelectronics, as they feature similar photoelectric properties but have high stability and lead-free merits. Unfortunately, due to the high exciton binding energy and small Bohr radius, their photodetection performance still largely lags behind that of Pb-based counterparts. Herein, using a vapor-phase chloride ion-substitution strategy, Cs3Bi2Br9 photodetectors (PDs) with gradient energy band alignment were delicately modulated, contributing to a high carrier separation/collection efficiency. The optimized Bi-based perovskite ACCT (Al2O3/Cs3Bi2Br9/Cs3Bi2ClxBr9-x/TiO2) PDs exhibit outstanding performance, the ON/OFF ratio and linear dynamic range (LDR) are significantly improved by 20 and 2.6 times, respectively. Significantly, we further demonstrate the high-SNR (signal-to-noise ratio) UV imaging based on the optimized device, which shows 21.887 dB higher than that of the pristine device. Finally, the vapor-phase anion-exchange modified perovskite PDs show long-term stability and high UV resistance. Vapor-phase ion-substitution is a promising approach for the synergistic effect of matched energy band alignment and interface passivation, which can be applied to other perovskite-based optoelectronic devices.

Multispectral photodetectors based on 2D material/Cs3Bi2I9heterostructures with high detectivity

Group VA metal halide-based perovskites have emerged as intensively explored Pb-free perovskites, owing to their excellent environmental stability and low-toxicity. However, the relatively low carrier mobility and high photocarrier recombination rates restrict their applications in photodetectors. One promising approach to achieve higher performance is to integrate these Pb-free perovskites with 2D materials to form heterostructures. Here, we report on the high sensitivity photodetectors based on MoS₂/Cs₃Bi₂I₉and graphene/Cs₃Bi₂I₉heterostructures for multispectral regions. The heterostructures combine the high carrier mobility of 2D materials with superior light-harvesting properties of perovskites, as well as the effective built-in electric filed at the junction area, leading to efficient photocarrier separation and extraction. The specific detectivity of MoS₂/Cs₃Bi₂I₉device reaches 1.15 × 10¹³Jones for the detection of ultraviolet (UV) light of 325 nm, which is four orders of magnitude higher than UV detectors built on GaN. As a result of the efficient dark current suppression, the specific detectivity of graphene/Cs₃Bi₂I₉photodetector can be promoted to 5.24 × 10¹¹Jones, 1.33 × 10¹¹Jones, and 1.12 × 10¹¹Jones for the detection of 325 nm, 447 nm, and 532 nm light, respectively.

Ultrasensitive UV Photodetector Based on Interfacial Charge-Controlled Inorganic Perovskite-Polymer Hybrid Structure

In this work, we demonstrate an ultrasensitive, visible-blind ultraviolet (UV) photodetector based on perovskite-polymer hybrid structure. A novel wide-band-gap vacancy-ordered lead-free inorganic perovskite Cs₂SnCl₆ with Nd³⁺ doping is employed in the active layer of this hybrid photodetector. Remarkably, with interfacial charge-controlled hole-injection operating mechanism, our device achieves a maximum detectivity of 6.3 × 10¹⁵ Jones at 372 nm, fast photoresponse speed with rise time and fall time in the order of milliseconds, and a large linear dynamic range of 118 dB. The performance is significantly better than most of the existing organic and inorganic semiconductor UV photodetectors reported so far, and its detectivity is close to 1 order of magnitude higher than that of the photomultiplication tube (PMT) in the UV region. In addition, the photodetector demonstrated excellent environmental stability, which is critical for commercial deployment of perovskite-based optoelectronic devices. The results presented in this work open a new route toward development of high-performance optoelectronic devices using perovskite-based hybrid nanomaterial systems.