Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3-xClx Perovskite for RRAM Application

Novel Semiconductive Ternary Hybrid Heterostructures for Artificial Optoelectronic Synapses

Synaptic devices that mimic biological synapses are considered as promising candidates for brain-inspired devices, offering the functionalities in neuromorphic computing. However, modulation of emerging optoelectronic synaptic devices has rarely been reported. Herein, a semiconductive ternary hybrid heterostructure is prepared with a D-D'-A configuration by introducing polyoxometalate (POM) as an additional electroactive donor (D') into a metalloviologen-based D-A framework. The obtained material features an unprecedented porous 8-connected bcu-net that accommodates nanoscale [α-SiW12 O40 ]4- counterions, displaying uncommon optoelectronic responses. Besides, the fabricated synaptic device based on this material can achieve dual-modulation of synaptic plasticity due to the synergetic effect of electron reservoir POM and photoinduced electron transfer. And it can successfully simulate learning and memory processes similar to those in biological systems. The result provides a facile and effective strategy to customize multi-modality artificial synapses in the field of crystal engineering, which opens a new direction for developing high-performance neuromorphic devices.

Evaluation of Cellulose–MXene Composite Hydrogel Based Bio-Resistive Random Access Memory Material as Mimics for Biological Synapses

We report a memory device based on organic-inorganic hybrid cellulose-Ti₃C₂T_X MXene composite hydrogel (CMCH) as a switching layer sandwiched between Ag top and FTO bottom electrodes. The device (Ag/CMCH/FTO) was fabricated by a simple, solution-processed route and exhibits reliable and reproducible bipolar resistive switching. Multilevel switching behavior was observed at low operating voltages (±0.5 to ±1 V). Furthermore, the capacitive-coupled memristive characteristics of the device were corroborated with electrochemical impedance spectroscopy and this affirmed the filamentary conduction switching mechanism (LRS-HRS). The synaptic functions of the CMCH-based memory device were evaluated, wherein potentiation/depression properties over 8 × 10³ electric pulses were observed. The device also exhibited spike time-dependent plasticity-based symmetric Hebbian learning rule of a biological synapse. This hybrid hydrogel is expected to be a potential switching material for low-cost, sustainable, and biocompatible memory storage devices and artificial synaptic applications.

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

Nanostructured perovskites for nonvolatile memory devices

Perovskite materials have driven tremendous advances in constructing electronic devices owing to their low cost, facile synthesis, outstanding electric and optoelectronic properties, flexible dimensionality engineering, and so on. Particularly, emerging nonvolatile memory devices (eNVMs) based on perovskites give birth to numerous traditional paradigm terminators in the fields of storage and computation. Despite significant exploration efforts being devoted to perovskite-based high-density storage and neuromorphic electronic devices, research studies on materials' dimensionality that has dominant effects on perovskite electronics' performances are paid little attention; therefore, a review from the point of view of structural morphologies of perovskites is essential for constructing perovskite-based devices. Here, recent advances of perovskite-based eNVMs (memristors and field-effect-transistors) are reviewed in terms of the dimensionality of perovskite materials and their potentialities in storage or neuromorphic computing. The corresponding material preparation methods, device structures, working mechanisms, and unique features are showcased and evaluated in detail. Furthermore, a broad spectrum of advanced technologies (e.g., hardware-based neural networks, in-sensor computing, logic operation, physical unclonable functions, and true random number generator), which are successfully achieved for perovskite-based electronics, are investigated. It is obvious that this review will provide benchmarks for designing high-quality perovskite-based electronics for application in storage, neuromorphic computing, artificial intelligence, information security, etc.

High Temperature CsPbBrxI3-x Memristors Based on Hybrid Electrical and Optical Resistive Switching Effects

The emergence of perovskite-based memristors associated with the migration of ions has attracted attention for use in overcoming the limitations of the von Neumann computing architecture and removing the bottleneck of storage density. However, systematic research on the temperature dependence of halide perovskite-based memristors is still required due to the unavoidable thermal stability limits. In this work, mixed halide CsPbBr_xI_3-x-based (X = 0, 1, 2) memristors with unique electrical and optical resistive switching properties in an ambient atmosphere from room temperature to a 240 °C maximum have been successfully achieved. At room temperature, the CsPbBr_xI_3-x-based memristors exhibit outstanding resistive switching behaviors such as ultralow operating voltage (∼0.81, ∼0.64, and ∼0.54 V for different devices, respectively), moderate ON/OFF ratio (∼10²), stable endurance (10³ cycles), and long retention time (10⁴ s). The CsPbBr_xI_3-x-based memristors maintain excellent repeatability and stability at high temperature. Endurance failures of CsPbI₃, CsPbBrI₂, and CsPbBr₂I memristors occur at 90, 150, and 270 °C, respectively. Finally, nonvolatile imaging employing CsPbBr₂I-based memristor arrays based on the electrical-write and optical-erase operation at 100 °C has been demonstrated. This study provides utilization potentiality in the high temperature scenarios for perovskite wearable and large-scale information devices.

Bioresistive Random-Access Memory with Gold Nanoparticles that Generate the Coulomb Blocking Effect Can Realize Multilevel Data Storage and Synapse Simulation

Gold nanoparticles (Au NPs) have good biocompatibility and special quantum effects. In this Letter, we embedded Au NPs into silkworm hemolymph (SH) to improve the performance of the device and fabricated Al/SH:Au NPs/indium tin oxide (ITO)/glass resistive random access memory. The device exhibits a bipolar switching behavior with a retention time of 10⁴ s. Compared with the Al/SH/ITO device without Au NPs, the device has a higher ON/OFF current ratio (>10⁵) and a smaller V_reset. The improvement in device performance is attributed to the fact that Au NPs act as the electron-trapping center in the device; a Coulomb blockade occurs after electrons are trapped, thereby increasing the resistance of the device in the high-resistance state. Using optimized devices can realize multilevel data storage and can also simulate synaptic characteristics such as potentiation and depression. The device is expected to be applied to high-density, low-cost, degradable, and biocompatible storage devices and neuromorphic computing in the future.

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device, it exhibits different resistance characteristics. When 1 mA is applied in the positive voltage range and 100 mA is applied in the negative voltage range, the device exhibits bipolar resistive switching behavior. Additionally, when 1 mA is applied in both the positive- and negative-voltage ranges, the device exhibits write-once-read-many-times (WORM) characteristics. The device has good endurance, with a retention time exceeding 10⁴ s. After 10⁴ bending cycles, the electrical characteristics remain constant. This memory device can be applied for “AND” and “OR” logic operations in programmable logic circuits. The prepared flexible and transparent biomemristor made of pure natural TH provides a promising new approach for realizing environmentally friendly and biocompatible flexible memory, nerve synapses, and wearable electronic devices.

Multilevel resistive random access memory achieved by MoO3/Hf/MoO3stack and its application in tunable high-pass filter

In this work, the multilevel resistive random access memories (RRAMs) have been achieved by using the structure of Pt/MoO₃/Hf/MoO₃/Pt with four stable resistance states. The devices show good retention property of each state (>10⁴s) and large memory window (>10⁴). The simulation and experimental study reveal that the resistive switching mechanism is ascribed to combination of the conductive filament in the stack of MoO₃/Hf next to the top electrode and redox reaction at the interface of Hf/MoO₃next to bottom electrode. The fitting results of current-voltage characteristics under low sweep voltage indicate that the conduction of HRSs is dominated by the Poole-Frenkel emission and that of LRS is governed by the Ohmic conduction. Based on the RRAM, the tunable high-pass filter (HPF) with configurable filtering characteristics has been realized. The gain-frequency characteristics of the programmable HPF show that the filter has high resolution and wide programming range, demonstrating the viability of the multilevel RRAMs for future spiking neural network and shrinking the programmable filters with low power consumption.

Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems

Recently, several types of lead halide perovskites have been actively researched for resistive switching (RS) memory or artificial synaptic devices due to their current-voltage hysteresis along with the feasibility of fabrication, low-temperature processability and superior charge mobility. However, the toxicity and environmental pollution potential of lead halide perovskites severely restrict their large-scale commercial prospects. In the present work, the environmentally friendly and uniform CsSnCl₃ perovskite films are introduced to act as an active layer in the flexible memristors. Ag/CsSnCl₃/ITO devices demonstrate bipolar RS with excellent electrical properties such as forming free characteristics, good uniformity, low operating voltages, a high ON/OFF ratio (10²) and a long retention time (>10⁴ s). The RS mechanism has been well explained in the outline of electric field-induced formation and rupture of Ag filaments in the CsSnCl₃ layer. The metallic nature of the conducting filament has been further confirmed by temperature-dependent variation of low and high resistance states. Additionally, various pulse measurements have been carried out to mimic some of the basic synaptic functions including postsynaptic current, paired-pulse facilitation, long-term potentiation and long-term depression under normal as well as bending conditions. Our work provides the opportunity for exploring artificial synapses based on lead-free halide perovskites for the development of next-generation flexible electronics.

Review of Interface Passivation of Perovskite Layer

Perovskite solar cells (PSCs) are the most promising substitute for silicon-based solar cells. However, their power conversion efficiency and stability must be improved. The recombination probability of the photogenerated carriers at each interface in a PSC is much greater than that of the bulk phase. The interface of a perovskite polycrystalline film is considered to be a defect-rich area, which is the main factor limiting the efficiency of a PSC. This review introduces and summarizes practical interface engineering techniques for improving the efficiency and stability of organic-inorganic lead halide PSCs. First, the effect of defects at the interface of the PSCs, the energy level alignment, and the chemical reactions on the efficiency of a PSC are summarized. Subsequently, the latest developments pertaining to a modification of the perovskite layers with different materials are discussed. Finally, the prospect of achieving an efficient PSC with long-term stability through the use of interface engineering is presented.