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Joung SY, Yim H, Lee D, Shim J, Yoo SY, Kim YH, Kim JS, Kim H, Hyeong SK, Kim J, Noh YY, Bae S, Park MJ, Choi JW, Lee CH. All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric. ACS NANO 2024; 18:1958-1968. [PMID: 38181200 DOI: 10.1021/acsnano.3c06972] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/07/2024]
Abstract
Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm2 V-1 s-1) and an on/off ratio exceeding 106. Additionally, the use of a high-k dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10-11 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.
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Affiliation(s)
- Su-Yeon Joung
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Haena Yim
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Donghun Lee
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jaehyung Shim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - So Yeon Yoo
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Yeon Ho Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jin Seok Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Hyunjun Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Seok-Ki Hyeong
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
| | - Junhee Kim
- KU-KIST Graduate School of Converging Science and Technology, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Sukang Bae
- Functional Composite Materials Research Center, Korea Institute of Science and Technology, Chudong-ro 92, Bongdong-eup, Wanju-gun, Jeonbuk 55324, Republic of Korea
- Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54896, Republic of Korea
| | - Myung Jin Park
- National Institute for Nanomaterials Technology, 77, Cheongam-ro, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea
| | - Ji-Won Choi
- Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, Republic of Korea
| | - Chul-Ho Lee
- Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea
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Yang G, Lin W, Lai H, Tong J, Lei J, Yuan M, Zhang Y, Cui C. Understanding the relationship between particle size and ultrasonic treatment during the synthesis of metal nanoparticles. ULTRASONICS SONOCHEMISTRY 2021; 73:105497. [PMID: 33677187 PMCID: PMC7941011 DOI: 10.1016/j.ultsonch.2021.105497] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2020] [Revised: 02/02/2021] [Accepted: 02/15/2021] [Indexed: 05/03/2023]
Abstract
Ultrasonic treatment is an effective method for size refinement and dispersion of nanomaterials during their synthesis process. However, the quantitative relationship between ultrasonic conditions and particle size in the synthesis of metal nanoparticles has not been fully revealed. In this study, Cu nanoparticles were synthesized via the wet-chemical redox method under ultrasonic treatment, and statistical analysis on the evolution of particle size distribution was carried out. It was found that the particle size decreased exponentially with increasing ultrasonic power. A quantitative model was then proposed to describe the influence of ultrasonic power on the size distribution of metal nanoparticles from the perspective of the competition between the surface energy and the ultrasonic force. A relational expression of Rc∝γ47P-37 was revealed, and it was proved to fit well with the experimental results. Our study provides new experimental basis and theoretical method for understanding the mechanism of ultrasonic-induced size refinement of metal nanoparticles.
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Affiliation(s)
- Guannan Yang
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China; Jihua Laboratory, Foshan 528225, PR China
| | - Wei Lin
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China
| | - Haiqi Lai
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China
| | - Jin Tong
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China
| | - Junjun Lei
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China
| | - Maodan Yuan
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China
| | - Yu Zhang
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China; Jihua Laboratory, Foshan 528225, PR China.
| | - Chengqiang Cui
- State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, Guangzhou 510006, PR China; Jihua Laboratory, Foshan 528225, PR China.
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