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Choi H, Song YE, Park D, Park C, Park BK, Son SU, Lim J, Chung TM. Germanium and Tin Precursors for Chalcogenide Materials Containing N-Alkoxy Thioamide Ligands. ACS OMEGA 2024; 9:28707-28714. [PMID: 38973851 PMCID: PMC11223241 DOI: 10.1021/acsomega.4c03019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/29/2024] [Revised: 06/05/2024] [Accepted: 06/07/2024] [Indexed: 07/09/2024]
Abstract
This study describes the synthesis of germanium and tin complexes Ge(mdpaS)2 (1), Ge(edpaS)2 (2), Ge(bdpaS)2 (3), Ge(empaS)2 (4), Sn(mdpaS)2 (5), Sn(edpaS)2 (6), Sn(bdpaS)2 (7), and Sn(empaS)2 (8) (mdpaSH = (Z)-N-methoxy-2,2-dimethylpropanimidothioic acid; edpaSH = (Z)-N-ethoxy-2,2-dimethylpropanimidothioic acid; bdpaSH = (Z)-N-(tert-butoxy)-2,2-dimethylpropanimidothioic acid; empaSH = (Z)-N-ethoxy-2-methylpropanimidothioic acid), using newly designed N-alkoxy thioamide ligands as precursors for metal chalcogenide materials. All complexes were characterized using various analytical techniques, and the single-crystal structures of complexes 5 and 7 revealed a distorted seesaw geometry in the monomeric SnL2 form. Thermogravimetric (TG) curves showed differences between Ge compounds, which exhibited single-step weight losses, and Sn compounds, which exhibited multistep weight losses. As a result, we suggest that the synthesized complexes 1-8 are potential precursors for group IV metal chalcogenide materials.
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Affiliation(s)
- Heenang Choi
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemistry, Sungkyunkwan University (SKKU), 2066 Seobu-ro,
Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic
of Korea
| | - Young Eun Song
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemical Convergence Materials, University
of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic
of Korea
| | - Dongseong Park
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Chanwoo Park
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Bo Keun Park
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemical Convergence Materials, University
of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic
of Korea
| | - Seung Uk Son
- Department
of Chemistry, Sungkyunkwan University (SKKU), 2066 Seobu-ro,
Jangan-gu, Suwon-si, Gyeonggi-do 16419, Republic
of Korea
| | - Jongsun Lim
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
| | - Taek-Mo Chung
- Thin
Film Materials Research Center, Korea Research
Institute of Chemical Technology (KRICT), 141 Gajeong-ro, Yuseong-gu, Daejeon 34114, Republic of Korea
- Department
of Chemical Convergence Materials, University
of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon 34113, Republic
of Korea
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Ishibe T, Komatsubara Y, Ishikawa K, Takigawa S, Naruse N, Mera Y, Yamashita Y, Ohishi Y, Nakamura Y. Boosting Thermoelectric Performance in Epitaxial GeTe Film/Si by Domain Engineering and Point Defect Control. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37191696 DOI: 10.1021/acsami.3c01404] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/17/2023]
Abstract
This study demonstrates a simultaneous realization of ultralow thermal conductivity and high thermoelectric power factor in epitaxial GeTe thin films/Si substrates by a combination of the interface introduction by domain engineering and the suppression of Ge vacancy generation by point defect control. We formed epitaxial Te-poor GeTe thin films having low-angle grain boundaries with a misorientation angle close to 0° or twin interfaces with a misorientation angle close to 180°. The control of interfaces and point defects gave rise to ultralow lattice thermal conductivity of ∼0.7 ± 0.2 W m-1 K-1. This value was the same in the order of magnitude as the theoretical minimum lattice thermal conductivity of ∼0.5 W m-1 K-1 calculated by the Cahill-Pohl model. At the same time, the GeTe thin films exhibited a high thermoelectric power factor because of the suppression of Ge vacancy generation and a small contribution of grain boundary carrier scattering. The outstanding combined technique of domain engineering and point defect control can be a great approach for developing high-performance thermoelectric films.
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Affiliation(s)
- Takafumi Ishibe
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
| | - Yuki Komatsubara
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
| | - Kodai Ishikawa
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
| | - Sho Takigawa
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
| | - Nobuyasu Naruse
- Department of Fundamental Bioscience, Shiga University of Medical Science, Otsu, Shiga 520-2192, Japan
| | - Yutaka Mera
- Department of Fundamental Bioscience, Shiga University of Medical Science, Otsu, Shiga 520-2192, Japan
| | - Yuichiro Yamashita
- National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8563, Japan
| | - Yuji Ohishi
- Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
| | - Yoshiaki Nakamura
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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