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Gao P, Duan M, Yang G, Zhang W, Jia C. Ultralow Energy Consumption and Fast Neuromorphic Computing Based on La 0.1Bi 0.9FeO 3 Ferroelectric Tunnel Junctions. NANO LETTERS 2024. [PMID: 39172999 DOI: 10.1021/acs.nanolett.4c01924] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2024]
Abstract
Low-power and fast artificial neural network devices represent the direction in developing analogue neural networks. Here, an ultralow power consumption (0.8 fJ) and rapid (100 ns) La0.1Bi0.9FeO3/La0.7Sr0.3MnO3 ferroelectric tunnel junction artificial synapse has been developed to emulate the biological neural networks. The visual memory and forgetting functionalities have been emulated based on long-term potentiation and depression with good linearity. Moreover, with a single device, logical operations of "AND" and "OR" are implemented, and an artificial neural network was constructed with a recognition accuracy of 96%. Especially for noisy data sets, the recognition speed is faster after preprocessing by the device in the present work. This sets the stage for highly reliable and repeatable unsupervised learning.
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Affiliation(s)
- Pan Gao
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
| | - Mengyuan Duan
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
| | - Guanghong Yang
- Key Lab for Special Functional Materials of Ministry of Education, School of Materials, Henan University, Kaifeng 475004, P. R. China
| | - Weifeng Zhang
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China
| | - Caihong Jia
- Henan Key Laboratory of Quantum Materials and Quantum Energy, School of Quantum Information Future Technology, Henan University, Kaifeng 475004, China
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Hwang J, Goh Y, Jeon S. Physics, Structures, and Applications of Fluorite-Structured Ferroelectric Tunnel Junctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305271. [PMID: 37863823 DOI: 10.1002/smll.202305271] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Revised: 09/11/2023] [Indexed: 10/22/2023]
Abstract
The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of ferroelectricity in fluorite-structured oxides such as HfO2 and ZrO2 . In terms of thickness scaling, CMOS compatibility, and 3D integration, these fluorite-structured FTJs provide a number of benefits over conventional perovskite-based FTJs. Here, recent developments involving all FTJ devices with fluorite structures are examined. The transport mechanism of fluorite-structured FTJs is explored and contrasted with perovskite-based FTJs and other 2-terminal resistive switching devices starting with the operation principle and essential parameters of the tunneling electroresistance effect. The applications of FTJs, such as neuromorphic devices, logic-in-memory, and physically unclonable function, are then discussed, along with several structural approaches to fluorite-structure FTJs. Finally, the materials and device integration difficulties related to fluorite-structure FTJ devices are reviewed. The purpose of this review is to outline the theories, physics, fabrication processes, applications, and current difficulties associated with fluorite-structure FTJs while also describing potential future possibilities for optimization.
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Affiliation(s)
- Junghyeon Hwang
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Youngin Goh
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
| | - Sanghun Jeon
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea
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Zhang X, Wei H, Wu Y, Yang T, Cao B. Giant tunnel resistance effect in (SrTiO 3) 2/(BaTiO 3) 4/(CaTiO 3) 2 asymmetric superlattice with enhanced polarization. Phys Chem Chem Phys 2024; 26:2168-2174. [PMID: 38132888 DOI: 10.1039/d3cp04608g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2023]
Abstract
In this work, we report the effectively enhanced tunneling electroresistance effect in Au/(SrTiO3)2/(BaTiO3)4/(CaTiO3)2/Nb:SrTiO3 superlattice ferroelectric tunnel junction (FTJ). The stable polarization switching and enhanced ferroelectricity were achieved in the nanoscale thickness high-quality epitaxial superlattice. A high ON/OFF current ratio of more than 105 was obtained at room temperature, which is an order of magnitude larger than the BaTiO3 FTJ with the same structure. Nonvolatile resistance switching controlled by nonvolatile polarization switching was observed in the superlattice FTJ. Driven by increased polarization and intrinsic asymmetric ferroelectricity, a highly asymmetric depolarization field is generated compared with the Au/BaTiO3/Nb:SrTiO3 FTJ, resulting in an enhanced tunneling electroresistance effect. These results provide a potential way to construct FTJ memory devices by constructing asymmetric three-component ferroelectric superlattices.
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Affiliation(s)
- Xiubing Zhang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Haoming Wei
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Yangqing Wu
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Tengzhou Yang
- School of Physics and Physical Engineering, Qufu Normal University, Qufu 273165, China.
| | - Bingqiang Cao
- School of Material Science and Engineering, University of Jinan, Jinan 250022, Shandong, China.
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Abstract
Efforts to design devices emulating complex cognitive abilities and response processes of biological systems have long been a coveted goal. Recent advancements in flexible electronics, mirroring human tissue's mechanical properties, hold significant promise. Artificial neuron devices, hinging on flexible artificial synapses, bioinspired sensors, and actuators, are meticulously engineered to mimic the biological systems. However, this field is in its infancy, requiring substantial groundwork to achieve autonomous systems with intelligent feedback, adaptability, and tangible problem-solving capabilities. This review provides a comprehensive overview of recent advancements in artificial neuron devices. It starts with fundamental principles of artificial synaptic devices and explores artificial sensory systems, integrating artificial synapses and bioinspired sensors to replicate all five human senses. A systematic presentation of artificial nervous systems follows, designed to emulate fundamental human nervous system functions. The review also discusses potential applications and outlines existing challenges, offering insights into future prospects. We aim for this review to illuminate the burgeoning field of artificial neuron devices, inspiring further innovation in this captivating area of research.
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Affiliation(s)
- Ke He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Cong Wang
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yongli He
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Jiangtao Su
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Xiaodong Chen
- Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- Institute for Digital Molecular Analytics and Science (IDMxS), Nanyang Technological University, 59 Nanyang Drive, Singapore 636921, Singapore
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Park JY, Choe DH, Lee DH, Yu GT, Yang K, Kim SH, Park GH, Nam SG, Lee HJ, Jo S, Kuh BJ, Ha D, Kim Y, Heo J, Park MH. Revival of Ferroelectric Memories Based on Emerging Fluorite-Structured Ferroelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204904. [PMID: 35952355 DOI: 10.1002/adma.202204904] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-structured oxides revived interest in the research on ferroelectric memories, by inducing nanoscale nonvolatility in state-of-the-art gate insulators by minute doping and thermal treatment. The potential of this approach has been demonstrated by the fabrication of sub-30 nm electronic devices. Nonetheless, to realize practical applications, various technical limitations, such as insufficient reliability including endurance, retention, and imprint, as well as large device-to-device-variation, require urgent solutions. Furthermore, such limitations should be considered based on targeting devices as well as applications. Various types of ferroelectric memories including ferroelectric random-access-memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction should be considered for classical nonvolatile memories as well as emerging neuromorphic computing and processing-in-memory. Therefore, from the viewpoint of materials science, this review covers the recent research focusing on ferroelectric memories from the history of conventional approaches to future prospects.
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Affiliation(s)
- Ju Yong Park
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Duk-Hyun Choe
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Geun Taek Yu
- School of Materials Science and Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Se Hyun Kim
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Geun Hyeong Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seung-Geol Nam
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Hyun Jae Lee
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Sanghyun Jo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Bong Jin Kuh
- Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea
| | - Daewon Ha
- Semiconductor Research and Development Center, Samsung Electronics, Hwaseong, 18448, Republic of Korea
| | - Yongsung Kim
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Jinseong Heo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, 16678, Republic of Korea
| | - Min Hyuk Park
- Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Seoul, 08826, Republic of Korea
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Liao J, Dai S, Peng RC, Yang J, Zeng B, Liao M, Zhou Y. HfO 2-based ferroelectric thin film and memory device applications in the post-Moore era: A review. FUNDAMENTAL RESEARCH 2023; 3:332-345. [PMID: 38933762 PMCID: PMC11197553 DOI: 10.1016/j.fmre.2023.02.010] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Revised: 02/11/2023] [Accepted: 02/23/2023] [Indexed: 03/05/2023] Open
Abstract
The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently required for novel non-volatile memory devices with low power consumption, fast read/write speed, and high reliability, which are crucial for high-performance computing. Ferroelectric memory has undergone extensive investigation as a viable alternative for commercial applications since the post-Moore era. However, conventional perovskite-structure ferroelectrics (e.g., PbZr x Ti1- x O3) encounter severe limitations for high-density integration owing to the size effect of ferroelectricity and incompatibility with complementary metal-oxide-semiconductor technology. Since 2011, the ferroelectric field has been primarily focused on HfO2-based ferroelectric thin films owing to their exceptional scalability. Several reviews discussing the control of ferroelectricity and device applications exist. It is believed that a comprehensive understanding of mechanisms based on industrial requirements and concerns is necessary, such as the wake-up effect and fatigue mechanism. These mechanisms reflect the atomic structures of the materials as well as the device physics. Herein, a review focusing on phase stability and domain structure is presented. In addition, the recent progress in related ferroelectric memory devices and their challenges is briefly discussed.
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Affiliation(s)
- Jiajia Liao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
| | - Siwei Dai
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
| | - Ren-Ci Peng
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
| | - Jiangheng Yang
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
| | - Binjian Zeng
- Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, China
| | - Min Liao
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
| | - Yichun Zhou
- School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710126, China
- Frontier Research Center of Thin Films and Coatings for Device Applications, Academy of Advanced Interdisciplinary Research, Xidian University, Xi'an 710126, China
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Kim KH, Karpov I, Olsson RH, Jariwala D. Wurtzite and fluorite ferroelectric materials for electronic memory. NATURE NANOTECHNOLOGY 2023; 18:422-441. [PMID: 37106053 DOI: 10.1038/s41565-023-01361-y] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2022] [Accepted: 02/24/2023] [Indexed: 05/21/2023]
Abstract
Ferroelectric materials, the charge equivalent of magnets, have been the subject of continued research interest since their discovery more than 100 years ago. The spontaneous electric polarization in these crystals, which is non-volatile and programmable, is appealing for a range of information technologies. However, while magnets have found their way into various types of modern information technology hardware, applications of ferroelectric materials that use their ferroelectric properties are still limited. Recent advances in ferroelectric materials with wurtzite and fluorite structure have renewed enthusiasm and offered new opportunities for their deployment in commercial-scale devices in microelectronics hardware. This Review focuses on the most recent and emerging wurtzite-structured ferroelectric materials and emphasizes their applications in memory and storage-based microelectronic hardware. Relevant comparisons with existing fluorite-structured ferroelectric materials are made and a detailed outlook on ferroelectric materials and devices applications is provided.
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Affiliation(s)
- Kwan-Ho Kim
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Ilya Karpov
- Components Research, Intel Corporation, Hillsboro, OR, USA
| | - Roy H Olsson
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, USA.
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Wang Z, Guan Z, Sun H, Luo Z, Zhao H, Wang H, Yin Y, Li X. High-Speed Nanoscale Ferroelectric Tunnel Junction for Multilevel Memory and Neural Network Computing. ACS APPLIED MATERIALS & INTERFACES 2022; 14:24602-24609. [PMID: 35604049 DOI: 10.1021/acsami.2c04441] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric tunnel junction (FTJ) is one promising candidate for next-generation nonvolatile data storage and neural network computing systems. In this work, the high-performance 50 nm-diameter Au/Ti/PbZr0.52Ti0.48O3 (∼3 nm, (111)-oriented)/Nb:SrTiO3 (Nb: 0.7 wt %) FTJs are achieved to demonstrate the scaling down capability of FTJ. As a nonvolatile memory, the FTJ shows eight distinct resistance states (3 bits) with a large ON/OFF ratio (>103), and these states can be switched at a fast speed of 10 ns. Intriguingly, the long-term potentiation/depression and spike timing-dependent plasticity, that is, fundamental functions of biological synapses, can be emulated in the nanoscale FTJ-based artificial synapse. A convolutional neural network (CNN) simulation is then carried out based on the experimental results, and a high recognition accuracy of ∼93.8% on fashion product images is obtained, which is very close to the result of ∼94.4% by a floating-point-based CNN software. In particular, the FTJ-based CNN simulation also exhibits robustness to input image noises. These results indicate the great potential of FTJ for high-density information storage and neural network computing.
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Affiliation(s)
- Zijian Wang
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zeyu Guan
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Haoyang Sun
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Zhen Luo
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Haoyu Zhao
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - He Wang
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yuewei Yin
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
| | - Xiaoguang Li
- Department of Physics and CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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