High Performance PbS Quantum Dot/Graphene Hybrid Solar Cell with Efficient Charge Extraction

Polarization-Dependent Memory and Erasure in Quantum Dots/Graphene Synaptic Devices

We demonstrate excitatory and inhibitory properties in a single heterostructure consisting of two quantum dots/graphene synaptic elements using linearly polarized monochromatic light. Perovskite quantum dots and PbS quantum dots were used to increase and decrease photocurrent weights, respectively. The polarization-dependent photocurrent was realized by adding a polarizer in the middle of the PbS quantum dots/graphene and perovskite quantum dots/graphene elements. When linearly polarized light passed through the polarizer, both the lower excitatory and upper inhibitory devices were activated, with the lower device with the stronger response dominating to increase the current weight. In contrast, the polarized light was blocked by the polarizer, and the above device was only operated, reducing the current weight. Furthermore, two orthogonal polarizations of light were used to perform the sequential processes of potentiation and habituation. By adjustment of the polarization angle of light, not only the direction of the current weight but also its level was altered.

Truly form-factor-free industrially scalable system integration for electronic textile architectures with multifunctional fiber devices

An integrated textile electronic system is reported here, enabling a truly free form factor system via textile manufacturing integration of fiber-based electronic components. Intelligent and smart systems require freedom of form factor, unrestricted design, and unlimited scale. Initial attempts to develop conductive fibers and textile electronics failed to achieve reliable integration and performance required for industrial-scale manufacturing of technical textiles by standard weaving technologies. Here, we present a textile electronic system with functional one-dimensional devices, including fiber photodetectors (as an input device), fiber supercapacitors (as an energy storage device), fiber field-effect transistors (as an electronic driving device), and fiber quantum dot light-emitting diodes (as an output device). As a proof of concept applicable to smart homes, a textile electronic system composed of multiple functional fiber components is demonstrated, enabling luminance modulation and letter indication depending on sunlight intensity.

Measuring the carrier diffusion length in quantum dot films using graphene as photocarrier density probe

The diffusion length of quantum dot (QD) films is a critical parameter to improve the performance of QD-based optoelectronic devices. The dot-to-dot hopping transport mechanism results in shorter diffusion lengths compared to bulk solids. Herein, we present an experimental method to measure the diffusion length in PbS QD films using single layer graphene as a charge collector to monitor the density of photogenerated carriers. By producing devices with different thicknesses, we can construct light absorption and photocarrier density profiles, allowing extracting light penetration depths and carrier diffusion lengths for electrons and holes. We realized devices with small (size: ∼2.5 nm) and large (size: ∼4.8 nm) QDs, and use λ = 532 nm and λ = 635 nm wavelength illumination. For small QDs, we obtain diffusion lengths of 180 nm for holes and 500 nm for electrons. For large QDs, we obtain diffusion lengths of 120 nm for holes and 150 nm for electrons. Our results show that films made of small QD films have longer diffusion lengths for holes and electrons. We also observe that wavelength illumination may have a small effect, with electrons showing a diffusion length of 500 and 420 nm under λ = 532 nm and λ = 635 nm illumination, respectively, which may be due to increased interactions between photocarriers for longer wavelengths with deeper penetration depths. Our results demonstrate an effective technique to calculate diffusion lengths of photogenerated electrons and holes and indicate that not only QD size but also wavelength illumination can play important roles in the diffusion and electrical transport of photocarriers in QD films.

Solution processed nanostructured hybrid materials based on PbS quantum dots and reduced graphene oxide with tunable optoelectronic properties

Nanostructured hybrid materials (NHMs) are promising candidates to improve the performance of several materials in different applications. In the case of optoelectronic technologies, the ability to tune the optical absorption of such NHMs is an appealing feature. Along with the capacity to transform the absorbed light into charge carriers (CC), and their consequently efficient transport to the different electrodes. In this regard, NHM based on graphene-like structures and semiconductor QDs are appealing candidates, assuming the NHMs retain the light absorption and CC photogeneration properties of semiconductor QDs, and the excellent CC transport properties displayed by graphene-like materials. In the current work a solution-processed NHM using PbS quantum dots (QDs) and graphene oxide (GO) was fabricated in a layer-by-layer configuration by dip-coating. Afterwards, these NHMs were reduced by thermal or chemical methods. Reduction process had a direct impact on the final optoelectronic properties displayed by the NHMs. All reduced samples displayed a decrement in their resistivity, particularly the sample chemically reduced, displaying a 10⁷ fold decrease; mainly attributed to N-doping in the reduced graphene oxide (rGO). The optical absorption coefficients also showed a dependence on the rGO's reduction degree, with reduced samples displaying higher values, and sample thermally reduced at 300 °C showing the highest absorption coefficient, due to the combined absorption of unaltered PbS QDs and the appearance of sp² regions within rGO. The photogenerated current increased in most reduced samples, displaying the highest photocurrent the sample reduced at 400 °C, presenting a 2500-fold increment compared to the NHM before reduction, attributed to an enhanced CC transfer from PbS QDs to rGO, as a consequence of an improved band alignment between them. These results show clear evidence on how the optoelectronic properties of NHMs based on semiconductor nanoparticles and rGO, can be tuned based on their configuration and the reduction process parameters.

Integrated Structure and Device Engineering for High Performance and Scalable Quantum Dot Infrared Photodetectors

Colloidal quantum dots (CQDs) are emerging as promising materials for the next generation infrared (IR) photodetectors, due to their easy solution processing, low cost manufacturing, size-tunable optoelectronic properties, and flexibility. Tremendous efforts including material engineering and device structure manipulation have been made to improve the performance of the photodetectors based on CQDs. In recent years, benefiting from the facial integration with materials such as 2D structure, perovskite and silicon, as well as device engineering, the performance of CQD IR photodetectors have been developing rapidly. On the other hand, to prompt the application of CQD IR photodetectors, scalable device structures that are compatible with commercial systems are developed. Herein, recent advances of CQD based IR photodetectors are summarized, especially material integration, device engineering, and scalable device structures.

Graphene/PbS quantum dot hybrid structure for application in near-infrared photodetectors

A graphene-PbS quantum dot (QD) composite for application in high-performance near-infrared (NIR) photodetectors (PDs) is proposed in this study. A single-layer graphene flake and oleic acid-capped PbS QD composite is fabricated through the conventional sonication process, in hexane solution. Field emission scanning electron microscopy images of the graphene-PbS QD composite dispersed on a glass substrate confirm that the composite contains both aggregated graphene flakes and single-layer graphene with wrinkles; Transmission electron microscopy images reveal close packing with uniform size. The increased absorbance and quenched photoluminescence intensity of the graphene-PbS QD composite supports enhanced photoinduced charge transfer between graphene and the PbS QDs. Moreover, the specific Raman mode of the PbS QDs, embedded in the spectrum, is enhanced by combination with graphene, which can be interpreted by SERS as relevant to the photoinduced charge transfer between the Pbs QDs and graphene. For device application, a PD structure comprised by graphene-PbS QDs is fabricated. The photocurrent of the PD is measured using a conventional probe station with a 980-nm NIR laser diode. In the fabricated PD comprising graphene-PbS QDs, five-times higher photocurrent, 22% faster rise time, and 47% faster decay time are observed, compared to that comprising PbS QDs alone. This establishes the potential of the graphene-PbS QD composite for application in ultrathin, flexible, high-performance NIR PDs.

Ligand-Assisted Formation of Graphene/Quantum Dot Monolayers with Improved Morphological and Electrical Properties

Hybrid nanomaterials based on graphene and PbS quantum dots (QDs) have demonstrated promising applications in optoelectronics. However, the formation of high-quality large-area hybrid films remains technologically challenging. Here, we demonstrate that ligand-assisted self-organization of covalently bonded PbS QDs and reduced graphene oxide (rGO) can be utilized for the formation of highly uniform monolayers. After the post-deposition ligand exchange, these films demonstrated high conductivity and photoresponse. The obtained films demonstrate a remarkable improvement in morphology and charge transport compared to those obtained by the spin-coating method. It is expected that these materials might find a range of applications in photovoltaics and optoelectronics.

Quantum-Dot Tandem Solar Cells Based on a Solution-Processed Nanoparticle Intermediate Layer

Tandem cells are one of the most effective ways of breaking the single junction Shockley-Queisser limit. Solution-processable phosphate-buffered saline (PbS) quantum dots are good candidates for producing multiple junction solar cells because of their size-tunable band gap. The intermediate recombination layer (RL) connecting the subcells in a tandem solar cell is crucial for device performance because it determines the charge recombination efficiency and electrical resistance. In this work, a solution-processed ultrathin NiO and Ag nanoparticle film serves as an intermediate layer to enhance the charge recombination efficiency in PbS QD dual-junction tandem solar cells. The champion devices with device architecture of indium tin oxide/S-ZnO/1.45 eV PbS-PbI₂/PbS-EDT/NiO/Ag NP/ZnO NP/1.22 eV PbS-PbI₂/PbS-EDT/Au deliver a 7.1% power conversion efficiency, which outperforms the optimized reference subcells. This result underscores the critical role of an appropriate nanocrystalline RL in producing high-performance solution-processed PbS QD tandem cells.

Functionalized rGO Interlayers Improve the Fill Factor and Current Density in PbS QDs-Based Solar Cells

Graphene-quantum dot nanocomposites attract significant attention for novel optoelectronic devices, such as ultrafast photodetectors and third-generation solar cells. Combining the remarkable optical properties of quantum dots (QDs) with the exceptional electrical properties of graphene derivatives opens a vast perspective for further growth in solar cell efficiency. Here, we applied (3-mercaptopropyl) trimethoxysilane functionalized reduced graphene oxide (f-rGO) to improve the QDs-based solar cell active layer. The different strategies of f-rGO embedding are explored. When f-rGO interlayers are inserted between PbS QD layers, the solar cells demonstrate a higher current density and a better fill factor. A combined study of the morphological and electrical parameters of the solar cells shows that the improved efficiency is associated with better layer homogeneity, lower trap-state densities, higher charge carrier concentrations, and the blocking of the minor charge carriers.

Modulation doping of absorbent cotton derived carbon dots for quantum dot-sensitized solar cells

In order to improve the power conversion efficiency (PCE) of quantum dot-sensitized solar cells (QDSC), a series of absorbent cotton derived carbon quantum dots (CQDs) with different dopants (namely carbamide, thiourea, and 1,3-diaminopropane) have been successfully synthesized by a one-pot hydrothermal method. The average particle sizes of the three doped CQDs are 1.7 nm, 5.6 nm, and 1.4 nm respectively, smaller than that of the undoped ones (24.2 nm). The morphological and structural characteristics of the four CQDs have been studied in detail. In addition, the three doped CQDs exhibit better optical properties compared with the undoped ones in the UV-vis and PL spectra. Then CQD-based QDSC are experimentally fabricated, showing that the short current density (J_sc) and open circuit voltage (V_oc) of the QDSC are distinctly improved owing to the dopants. Especially the QDSC with the 1,3-diaminopropane doped CQD achieves the highest PCE (0.527%), 299% larger than that without dopant (0.176%). In order to highlight a reasonable mechanism, the UV-vis diffuse reflectance spectrum of CQD sensitized TiO₂ and the calculated energy band structures of various CQDs are investigated. It's found from the above analysis that the addition of carbamide, thiourea, and 1,3-diaminopropane is beneficial to obtain CQDs of smaller size, and with a smaller band gap and more nitrogenous or sulphureous functional groups, which enhance the light absorption performance and photo-excitation properties. The above factors are helpful to improve the J_sc of QDSC. Nitrogen, acting as a donor to the CQDs, will assist the sensitized photoanode with a higher Fermi level, resulting in a larger V_oc of the QSDC. Finally this study builds the relation among the microstructure of the CQDs, three characteristics of the CQDs (namely the spectra, energy band structure and functional groups) and the photoelectric properties of the QDSC, which will provide guidance for the modulation doping of CQDs to improve the PCE of QDSC.

Consecutive Junction-Induced Efficient Charge Separation Mechanisms for High-Performance MoS2/Quantum Dot Phototransistors

Phototransistors that are based on a hybrid vertical heterojunction structure of two-dimensional (2D)/quantum dots (QDs) have recently attracted attention as a promising device architecture for enhancing the quantum efficiency of photodetectors. However, to optimize the device structure to allow for more efficient charge separation and transfer to the electrodes, a better understanding of the photophysical mechanisms that take place in these architectures is required. Here, we employ a novel concept involving the modulation of the built-in potential within the QD layers for creating a new hybrid MoS₂/PbS QDs phototransistor with consecutive type II junctions. The effects of the built-in potential across the depletion region near the type II junction interface in the QD layers are found to improve the photoresponse as well as decrease the response times to 950 μs, which is the faster response time (by orders of magnitude) than that recorded for previously reported 2D/QD phototransistors. Also, by implementing an electric-field modulation of the MoS₂ channel, our experimental results reveal that the detectivity can be as large as 1 × 10¹¹ jones. This work demonstrates an important pathway toward designing hybrid phototransistors and mixed-dimensional van der Waals heterostructures.

Assembly of graphene nanoflake-quantum dot hybrids in aqueous solution and their performance in light-harvesting applications

Graphene nanoflakes and CdSe/ZnS quantum dots were covalently linked in environmentally friendly aqueous solution. Raman spectroscopy and photoluminescence studies, both in solution and on surfaces at the single nanohybrid level, showed evidence of charge transfer between the two nanostructures. The nanohybrids were further incorporated into solar cell devices, demonstrating their potential as light harvesting assemblies.

Interlayer coupling and the phase transition mechanism of stacked MoS2/TaS2 heterostructures discovered using temperature dependent Raman and photoluminescence spectroscopy

Ultrathin 1T (tetragonal)-TaS2 and monolayer MoS2 heterostructures were prepared to study their phase transition (PT) mechanisms and band structure modulation. The temperature dependency of photoluminescence (PL) and Raman spectra was utilized to study interlayer coupling and band structure. The PL results indicate that the band structure of MoS2/TaS2 heterostructures undergoes a sharp change at 214 K. This is attributed to the PT of 1T-TaS2 from a Mott insulator state to a metastable state. In addition, the temperature dependency of the MoS2/TaS2 Raman spectra illustrates that the phonon vibration of the heterojunction is softened due to the effect of interlayer coupling. The present work could provide an avenue to create material systems with abundant functionalities and physical effects.

Solar cells with PbS quantum dot sensitized TiO2-multiwalled carbon nanotube composites, sulfide-titania gel and tin sulfide coated C-fabric

Novel approaches to boost quantum dot solar cell (QDSC) efficiencies are in demand. Herein, three strategies are used: (i) a hydrothermally synthesized TiO₂-multiwalled carbon nanotube (MWCNT) composite instead of conventional TiO₂, (ii) a counter electrode (CE) that has not been applied to QDSCs until now, namely, tin sulfide (SnS) nanoparticles (NPs) coated over a conductive carbon (C)-fabric, and (iii) a quasi-solid-state gel electrolyte composed of S^2-, an inert polymer and TiO₂ nanoparticles as opposed to a polysulfide solution based hole transport layer. MWCNTs by virtue of their high electrical conductivity and suitably positioned Fermi level (below the conduction bands of TiO₂ and PbS) allow fast photogenerated electron injection into the external circuit, and this is confirmed by a higher efficiency of 6.3% achieved for a TiO₂-MWCNT/PbS/ZnS based (champion) cell, compared to the corresponding TiO₂/PbS/ZnS based cell (4.45%). Nanoscale current map analysis of TiO₂ and TiO₂-MWCNTs reveals the presence of narrowly spaced highly conducting domains in the latter, which equips it with an average current carrying capability greater by a few orders of magnitude. Electron transport and recombination resistances are lower and higher respectively for the TiO₂-MWCNT/PbS/ZnS cell relative to the TiO₂/PbS/ZnS cell, thus leading to a high performance cell. The efficacy of SnS/C-fabric as a CE is confirmed from the higher efficiency achieved in cells with this CE compared to the C-fabric based cells. Lower charge transfer and diffusional resistances, slower photovoltage decay, high electrical conductance and lower redox potential impart high catalytic activity to the SnS/C-fabric assembly for sulfide reduction and thus endow the TiO₂-MWCNT/PbS/ZnS cell with a high open circuit voltage (0.9 V) and a large short circuit current density (∼20 mA cm^-2). This study attempts to unravel how simple strategies can amplify QDSC performances.

Strain-Mediated Interlayer Coupling Effects on the Excitonic Behaviors in an Epitaxially Grown MoS2/WS2 van der Waals Heterobilayer

van der Waals heterostructures composed of two different monolayer crystals have recently attracted attention as a powerful and versatile platform for studying fundamental physics, as well as having great potential in future functional devices because of the diversity in the band alignments and the unique interlayer coupling that occurs at the heterojunction interface. However, despite these attractive features, a fundamental understanding of the underlying physics accounting for the effect of interlayer coupling on the interactions between electrons, photons, and phonons in the stacked heterobilayer is still lacking. Here, we demonstrate a detailed analysis of the strain-dependent excitonic behavior of an epitaxially grown MoS₂/WS₂ vertical heterostructure under uniaxial tensile and compressive strain that enables the interlayer interactions to be modulated along with the electronic band structure. We find that the strain-modulated interlayer coupling directly affects the characteristic combined vibrational and excitonic properties of each monolayer in the heterobilayer. It is further revealed that the relative photoluminescence intensity ratio of WS₂ to MoS₂ in our heterobilayer increases monotonically with tensile strain and decreases with compressive strain. We attribute the strain-dependent emission behavior of the heterobilayer to the modulation of the band structure for each monolayer, which is dictated by the alterations in the band gap transitions. These findings present an important pathway toward designing heterostructures and flexible devices.

Photoluminescence enhancement of amino-functionalized graphene quantum dots in two-dimensional optical resonators

This paper reports on the emission characteristics of amino-functionalized graphene quantum dots (af-GQDs). We employed the variable stripe length method to measure the net optical gain of af-GQDs. Photoluminescence emission was enhanced through the efficient confinement of photons using an optical resonator. The two-dimensional resonator is made up of a cholesteric liquid crystal (CLC) reflector to enable the redistribution of spontaneous emission from the af-GQDs. The proposed method was shown to increase the intensity of peak emission to more than three times that of the reference sample without a CLC reflector. The peak emission intensity of af-GQDs in the optical resonator grows exponentially with an increase in excitation energy. These results demonstrate the feasibility of two-dimensional optical amplifiers based on CLC reflectors.

Recent progress in the preparation and application of quantum dots/graphene composite materials

Quantum dots/graphene (QDs/GR) composite materials show a distinct synergistic effect between the QDs and graphene, which has aroused vast attention toward their unique characteristics in the last few decades.

Enhanced charge carrier transport properties in colloidal quantum dot solar cells via organic and inorganic hybrid surface passivation

Colloidal quantum dots (CQDs) are extremely promising as photovoltaic materials. In particular, the tunability of their electronic band gap and cost effective synthetic procedures allow for the versatile fabrication of solar energy harvesting cells, resulting in optimal device performance. However, one of the main challenges in developing high performance quantum dot solar cells (QDSCs) is the improvement of the photo-generated charge transport and collection, which is mainly hindered by imperfect surface functionalization, such as the presence of surface electronic trap sites and the initial bulky surface ligands. Therefore, for these reasons, finding effective methods to efficiently decorate the surface of the as-prepared CQDs with new short molecular length chemical structures so as to enhance the performance of QDSCs is highly desirable. Here, we suggest employing hybrid halide ions along with the shortest heterocyclic molecule as a robust passivation structure to eliminate surface trap sites while decreasing the charge trapping dynamics and increasing the charge extraction efficiency in CQD active layers. This hybrid ligand treatment shows a better coordination with Pb atoms within the crystal, resulting in low trap sites and a near perfect removal of the pristine initial bulky ligands, thereby achieving better conductivity and film structure. Compared to halide ion-only treated cells, solar cells fabricated through this hybrid passivation method show an increase in the power conversion efficiency from 5.3% for the halide ion-treated cells to 6.8% for the hybrid-treated solar cells.

Schottky–ohmic converted contact, fast-response, infrared PbTe photodetector with stable photoresponse in air

In this paper, TBAI treated PbTe CQD film photodetectors with fast-response show infrared photoelectronic properties in air.

Recent advances in counter electrodes of quantum dot-sensitized solar cells

The recent progress in the development of counter electrodes (CEs) is reviewed, and the key issues for the materials, structures and performance evaluation of CEs are also addressed.