Preparation of Bismuth Telluride Films with High Thermoelectric Power Factor

Thermoelectric bismuth telluride nanostructures fabricated by electrodeposition within flexible templates

Bismuth telluride, a highly efficient thermoelectric material, stands out for applications around room temperature in wearable devices. By harnessing the thermal gradient established between the human body and ambient temperature, we can generate useable electricity. Notably, bismuth telluride nanostructures exhibit significantly lower thermal conductivities compared to their bulk counterparts. As a result, the thermoelectric efficiency achieved is notably higher. Our research focuses on developing efficient nanostructured materials based on bismuth telluride inside a flexible substrate made of polyester. We employ scalable methods, such as template-assisted electrochemical deposition, to fabricate these nanostructures. In this study, we present an approach to the development of flexible nanostructured thermoelectric materials. Despite using a reduced quantity of active material, our electrochemically deposited nanostructures inside a flexible template demonstrate a remarkable performance. They exhibit 24 % of the Power Factor reported for conventional electrochemically fabricated Bi2Te3 thin films, and notably, they even surpass the Power Factor reported for flexible Bi2Te3-based inks used in the creation of flexible generators. This achievement underscores the potential of our method in the advancement of efficient, flexible thermoelectric devices.

A Bi2Te3-Filled Nickel Foam Film with Exceptional Flexibility and Thermoelectric Performance

The past decades have witnessed surging demand for wearable electronics, for which thermoelectrics (TEs) are considered a promising self-charging technology, as they are capable of converting skin heat into electricity directly. Bi2Te3 is the most-used TE material at room temperature, due to a high zT of ~1. However, it is different to integrate Bi2Te3 for wearable TEs owing to its intrinsic rigidity. Bi2Te3 could be flexible when made thin enough, but this implies a small electrical and thermal load, thus severely restricting the power output. Herein, we developed a Bi2Te3/nickel foam (NiFoam) composite film through solvothermal deposition of Bi2Te3 nanoplates into porous NiFoam. Due to the mesh structure and ductility of Ni Foam, the film, with a thickness of 160 μm, exhibited a high figure of merit for flexibility, 0.016, connoting higher output. Moreover, the film also revealed a high tensile strength of 12.7 ± 0.04 MPa and a maximum elongation rate of 28.8%. In addition, due to the film's high electrical conductivity and enhanced Seebeck coefficient, an outstanding power factor of 850 μW m-1 K-2 was achieved, which is among the highest ever reported. A module fabricated with five such n-type legs integrated electrically in series and thermally in parallel showed an output power of 22.8 nW at a temperature gap of 30 K. This work offered a cost-effective avenue for making highly flexible TE films for power supply of wearable electronics by intercalating TE nanoplates into porous and meshed-structure materials.

Comprehensive Review on Thermoelectric Electrodeposits: Enhancing Thermoelectric Performance Through Nanoengineering

Thermoelectric devices based power generation and cooling systemsystem have lot of advantages over conventional refrigerator and power generators, becausebecause of solid-state devicesdevices, compact size, good scalability, nono-emissions and low maintenance requirement with long operating lifetime. However, the applications of thermoelectric devices have been limited owingowing to their low energy conversion efficiency. It has drawn tremendous attention in the field of thermoelectric materials and devices in the 21st century because of the need of sustainable energy harvesting technology and the ability to develop higher performance thermoelectric materials through nanoscale science and defect engineering. Among various fabrication methods, electrodeposition is one of the most promising synthesis methods to fabricate devices because of its ability to control morphology, composition, crystallinity, and crystal structure of materials through controlling electrodeposition parameters. Additionally, it is an additive manufacturing technique with minimum waste materials that operates at near room temperature. Furthermore, its growth rate is significantly higher (i.e., a few hundred microns per hour) than the vacuum processes, which allows device fabrication in cost effective matter. In this paper, the latest development of various electrodeposited thermoelectric materials (i.e., Te, PbTe, Bi₂Te₃ and their derivatives, BiSe, BiS, Sb₂Te₃) in different forms including thin films, nanowires, and nanocomposites were comprehensively reviewed. Additionally, their thermoelectric properties are correlated to the composition, morphology, and crystal structure.

Nanostructured Inorganic Chalcogenide-Carbon Nanotube Yarn having a High Thermoelectric Power Factor at Low Temperature

As power-conversion devices, flexible thermoelectrics that enable conformal contact with heat sources of arbitrary shape are attractive. However, the low performance of flexible thermoelectric materials, which does not exceed those of brittle inorganic counterparts, hampers their practical applications. Herein, we propose inorganic chalcogenide-nanostructured carbon nanotube (CNT) yarns with outstanding power factor at a low temperature using electrochemical deposition. The inorganic chalcogenide-nanostructured CNT yarns exhibit the power factors of 3425 and 2730 μW/(m·K²) at 298 K for the p- and n-type, respectively, which is higher than those of previously reported flexible TE materials. On the basis of excellent performance and geometry advantage of the nanostructured CNT yarn for modular design, all-CNT based thermoelectric generators have been easily fabricated, showing the maximum power densities of 24 and 380 mW/m² at ΔT = 5 and 20 K, respectively. These results provide a promising strategy for the realization of high-performance flexible thermoelectric materials and devices for flexible/or wearable self-powering systems.

Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials

The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.

Static and Dynamic Postannealing Strategies for Roll-to-Roll Fabrication of DC Magnetron Sputtered Bismuth Telluride Thin Films onto Polymer Webs

High-throughput roll-to-roll processes are desirable to scale up the manufacture of flexible thermoelectric generators. While vacuum deposition onto a heated dynamic substrate presents a considerable engineering challenge, viable postdeposition in-line annealing processes are considered as an alternative to improve the functional performance of as-deposited films. The effect of infrared and electron-beam irradiations of 1 μm thick bismuth telluride thin films, produced by a vacuum roll-to-roll process for use as thermoelectric materials, was examined. A static vacuum oven and pulsed high-energy electron beam were also studied as control groups. All annealing strategies increased the crystallite size and decreased the Te content. Only the static vacuum oven treatment was shown to significantly improve the film's crystallinity. After 1 h annealing, the power factor improved by 400% (from 2.8 to 14 × 10^-4 W/mK²), which, to the knowledge of the authors, is the highest reported thermoelectric performance of postannealed or hot-deposited Bi-Te films. As for in-line annealing, infrared and electron-beam post treatments improved the power factor by 146% (from 2.8 to 6.9 × 10^-4 W/mK²) and 64% (from 2.8 to 4.6 × 10^-4 W/mK²), respectively.

Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

N-type bismuth telluride (Bi₂Te₃) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K² for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Manufacturing Te/PEDOT Films for Thermoelectric Applications

In this work, flexible Te films have been synthesized by electrochemical deposition using PEDOT [poly(3,4-ethylenedioxythiophene)] nanofilms as working electrodes. The Te electrodeposition time was varied to find the best thermoelectric properties of the Te/PEDOT double layers. To show the high quality of the Te films grown on PEDOT, the samples were analyzed by Raman spectroscopy, showing the three Raman active modes of Te: E₁, A₁, and E₂. The X-ray diffraction spectra also confirmed the presence of crystalline Te on top of the PEDOT films. The morphology of the Te/PEDOT films was studied using scanning electron microscopy, showing a homogeneous distribution of Te along the film. Also an atomic force microscope was used to analyze the quality of the Te surface. Finally, the electrical conductivity and the Seebeck coefficient of the Te/PEDOT films were measured as a function of the Te deposition time. The films showed an excellent thermoelectric behavior, giving a maximum power factor of about 320 ± 16 μW m^-1 K^-2 after 2.5 h of Te electrochemical deposition, a value larger than that reported for thin films of Te. Qualitative arguments to explain this behavior are given in the discussion.